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TW200414266A - Cold cathode field emission flat lamp having carbon nanometer materials and manufacturing method thereof - Google Patents

Cold cathode field emission flat lamp having carbon nanometer materials and manufacturing method thereof Download PDF

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Publication number
TW200414266A
TW200414266A TW92102452A TW92102452A TW200414266A TW 200414266 A TW200414266 A TW 200414266A TW 92102452 A TW92102452 A TW 92102452A TW 92102452 A TW92102452 A TW 92102452A TW 200414266 A TW200414266 A TW 200414266A
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Taiwan
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nano
field emission
flat lamp
scope
carbon material
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TW92102452A
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Chinese (zh)
Inventor
Chia-Chih Chuang
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Chia-Chih Chuang
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Priority to TW92102452A priority Critical patent/TW200414266A/en
Publication of TW200414266A publication Critical patent/TW200414266A/en

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Abstract

The present invention relates to a cold cathode field emission flat lamp having carbon nanometer materials and a manufacturing method thereof. The method comprises the following steps: (1) using a carbon nanometer material unit to produce carbon nanometer materials on a conductive substrate to form an electron generating source; (2) using a lower substrate unit to place a carbon nanometer material field emitter into a lower substrate having a resistance material layer; (3) using a grid unit to place a conductive plate on the carbon nanometer material field emitter in the lower substrate; (4) using a photo-permeable substrate unit to coat a conductive thin film, luminous materials, and a protection layer on a photo-permeable plate, where the luminous materials can illuminate visible lights after being hit by electrons; (5) using a packaging unit to vacuum the lower substrate unit and the photo-permeable unit before sealing to form a carbon nanometer material field emission flat lamp; and (6) using a cold cathode field emission illuminator to apply additional fields to allow the carbon nanometer material field emitter to emit electrons and, after the electrons hit the luminous materials, generate visible lights. The present invention is able to form a carbon nanometer material cold cathode field emission flat lamp by means of a three-electrode (anode, grid, and cathode) structure or a two-electrode (anode and cathode) structure. Also, by means of the present invention, a flat type carbon nanometer material field emission flat lamp having low power consumption, high luminous efficiency, high brightness, and no heat can be efficiently manufactured.

Description

200414266 五、發明說明(1) 【發明所屬之技術領域】 本發明係關於一種具奈米碳材料冷陰極場發射式平面 燈及其製造方法,尤其適用於照明。 【先前技術】 利用外加電壓而發光之發光裝置,向來,以日光燈和 普通燈泡為主。日光燈和普通燈泡體積大、發光效率低且 會產生熱,造成許多使用上的限制及能源浪費。在現今強 調節省能源的時代,傳統日光燈和普通燈泡已不符合現今 使用者的需求,能源浪費是世界先進國家非常重視的問 題,我國也不能置身於事外,因此有效提升能源轉換效率 減少能源浪費是未來的趨勢。日光燈及傳統燈泡發光機制 受到物理特性的限制,在發光效率上一值無法提高,且現 今光源之使用場合在多樣化的要求下,常需要大面積平面 式光源來當照明用,但日光燈及傳統燈泡因發光構型限 制,必須額外增加導光裝置以增大光罩面積及照光均勻 度,此將導致成本增加。因此在節省能源提升能源轉換效 率和產生高亮度的前提下,更需一種具高發光效率、高亮 度與不生熱之光源,以克服日光燈與傳統燈泡無法解決的 困難。 向來,在照明裝置中多以日光燈和傳統燈泡為主要光 源,然而,其非平面式光源常常使光照區域出現亮度不均 的現象,唯有使用平面式光源才能改善此一缺點,因此, 急需一種高發光效率、高亮度和不發熱之平面式光源來取200414266 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a cold cathode field emission type flat lamp with nano carbon material and a manufacturing method thereof, and is particularly suitable for lighting. [Prior art] Conventionally, light-emitting devices that emit light by applying voltage are mainly fluorescent lamps and ordinary light bulbs. Fluorescent lamps and ordinary light bulbs are bulky, have low luminous efficiency, and generate heat, causing many restrictions on use and waste of energy. In today's era that emphasizes energy conservation, traditional fluorescent lamps and ordinary light bulbs no longer meet the needs of today's users. Energy waste is a very important issue in advanced countries in the world, and China cannot stay aloof. Therefore, it can effectively improve energy conversion efficiency and reduce energy waste. Is the future trend. The lighting mechanism of fluorescent lamps and traditional light bulbs is limited by physical characteristics, and the value of luminous efficiency cannot be improved. Under the diverse requirements of current light source applications, large-area planar light sources are often used for lighting, but fluorescent lamps and traditional Due to the limitation of the light emitting configuration of the light bulb, an additional light guiding device must be added to increase the area of the mask and the uniformity of the light, which will cause an increase in cost. Therefore, under the premise of saving energy, improving energy conversion efficiency and generating high brightness, a light source with high luminous efficiency, high brightness and no heat generation is needed to overcome the difficulties that fluorescent lamps and traditional light bulbs cannot solve. Traditionally, fluorescent lamps and traditional light bulbs are mainly used as the main light source in lighting devices. However, the non-planar light source often causes uneven brightness in the illuminated area. Only the use of a planar light source can improve this disadvantage. Therefore, an urgent need is High luminous efficiency, high brightness and non-heating planar light source

第6頁 200414266 五、發明說明(2) 代現有日光燈及傳統燈泡,以克服日光燈與傳統燈泡無法 解決的困難’提升能源使用效率。 【發明 § 為主, 曰光燈 方面, 光線均 大時會 束發散 提供一 料場發 源,增 本 中可產 光材料 電場作 之起始 材料為 材料屬 1 〇 0 nm 性讓奈 料為冷 内容】 統燈泡 ,造成 〇另一 面積内 差值過 小之光 目的係 米碳材 用能 低電場 料使發 受外加 碳材料 奈米被 奈米碳 徑在 比的特 米碳材 能源使 前,用於照明所使用的光源,以日光燈和傳 受限於發光效率、亮度和能源損耗(產生熱) 和傳統燈泡無法成為下一世代省電照明光源 日光燈和傳統燈泡屬非平面光源’因此照光 勻度不佳,容易出現局部亮度差異現象,此 呈現出較大明暗對比,不利於照明使用;較 角度不易形成大面積之光照區域。本發明的 種高發光效率、高亮度及不發熱之平面式奈 射式平面燈,以提升能源轉換效率並有效利 加照光均勻度。 發明利用奈米碳材料優異之場發射特性,在 生大量高密度電子束,藉由電子撞擊發光材 被激發而發光,發光亮度取決於奈米碳材料 用所釋放出電子數量的多募而定。由於奈米 電場(turn on field)小於 1 v/#m,二用 冷陰極場發射子,可提升能源轉換效率。且 於一維奈米尺度結構,一維奈米碳材料之直 以,長度可達數十微米(“m),高長寬 米碳材料有甚佳之場發射增強效果,故以奈 陰極場發射發光元件場發射子,可有效提升Page 6 200414266 V. Description of the invention (2) Replacing existing fluorescent lamps and traditional light bulbs, to overcome the difficulties that fluorescent lamps and traditional light bulbs cannot solve, to improve energy efficiency. [Invention § Mainly, in terms of light lamps, when the light is large, the beam will diverge to provide a source of material field. The starting material for the electric field that can produce light-emitting materials in the increase is 100 nm, which makes the nano-material cold. Content] The system uses a traditional light bulb, which causes the light in the other area to have a small difference. The purpose of the rice carbon material is to use low-energy materials to send and receive the additional carbon material. The light source used for lighting is limited by the luminous efficiency, brightness and energy loss (generation of heat) and traditional light bulbs cannot be the next generation of energy-saving lighting sources. The fluorescent light and traditional light bulbs are non-planar light sources. Poor degree, easy to appear the local brightness difference phenomenon, which presents a large contrast between light and dark, which is not conducive to the use of lighting; it is not easy to form a large area of light from a relatively angle. The high-efficiency, high-brightness, and non-heating flat-type nano-type flat lamp of the present invention can improve energy conversion efficiency and effectively improve uniformity of illumination. The invention uses the excellent field emission characteristics of nano-carbon materials to generate a large number of high-density electron beams, which are excited by electrons to strike the luminescent material to emit light. The luminous brightness depends on the increase in the number of electrons released by the nano-carbon material. . Since the nano electric field (turn on field) is less than 1 v / # m, the use of cold cathode field emitters can improve energy conversion efficiency. Moreover, in the one-dimensional nanometer-scale structure, the one-dimensional nanometer carbon material has a length of several tens of micrometers ("m"). The high-length-wide carbon material has a good field emission enhancement effect. Field emitters can effectively enhance

200414266 五、發明說明(3) 用率,並提高亮度。 首先,將奈米碳材料置於岭^u , 板和奈米碳材料間有一層導電厂T : 土板上,/導電基 並作為電極用,奈米碳;導電層可增加導電性 碳材料冷陰極場發射子。將此::層和導電基板構成奈米 阻材料層下基板中,電阻材料:::材料冷陰極放入具電 組合稱為下基板單元。斗:陰極場發射子及陰極 極,藉由栅極和陰極,利ί外板f元内置放—栅 一外加電場,此外加電場促 2堊使侍栅極和陰極產生 子進入真空環境中。另—方而不未碳材料場發射子發射電 薄臈,此導電薄膜可作為=用上蒸鍍-層導電 料透光板為透光板單元。以元: =,*電極和發光材 光基板封合’封合後成為奈米碳材下基板和透 栅極和陽極所產生之電壓差加以釋=+,再藉由 擊發光材料使之發光,此一發光源=::有動能之電子撞 度。由於栅極和陰極間的間距…。。二二以個電極控制亮 陰極距離不超過丨mm,故此一星太 ,通常陽極和 式:面燈厚度甚薄在數厘米(二=材=陰極場發射 ::效減少#光裝置之體積過大所造成的」『丨薄膜製程 不米碳材料冷陰極場發射式平面燈的運用浪【此=加 m 第8頁 200414266 五、發明說明(4) 外,也可利用在奈米碳材料單元中陰極和透光板上之陽極 所形成的電場,讓奈米碳材料發射電子,使電子撞擊發光 材料後發光,形成二極式奈米碳材料冷陰極場發射式平面 燈。 本發明具奈米碳材料冷陰極場發射式平面燈為一平面 式光源,將奈米技術導入發光元件中,藉由奈米碳材料本 身的物理特性大大的降低起始電場和提高電流密度,使得 能量轉換效率提高,以降低能源浪費。平面發光機制可使 照光面積内光線強度均勻分佈,並產生大面積之高均勻亮 度區域,改善日光燈和傳統燈泡容易出現照光不均勻的現 象。 本發明具奈米碳材料冷陰極場發射式平面燈及其製造 方法新穎,能提供給照明產業利用,具有省電、高亮度和 平面式光源的功效,故依法申請發明專利。200414266 V. Description of the invention (3) Utilization rate and increase brightness. First, the nano-carbon material is placed on the ridge, and there is a conductive layer between the plate and the nano-carbon material. T: soil plate, / conductive substrate and used as the electrode, nano-carbon; the conductive layer can increase the conductive carbon material. Cold cathode field emitter. This :: layer and the conductive substrate constitute a nanometer resistive material layer. The lower substrate, the resistive material ::: material, the cold cathode is placed in the electrified combination is called the lower substrate unit. Bucket: cathode field emitter and cathode, through the grid and cathode, the outer plate f element built-in discharge-grid-an external electric field, in addition to the electric field to promote the chalk and cathode generator into the vacuum environment. On the other hand, square but not carbon material field emitters emit thin films. This conductive film can be used as a light-transmissive plate unit with a vapor-deposited layer of conductive material. With the element: =, * the electrode and the light-emitting material are sealed together, and the voltage difference between the lower carbon substrate and the transparent grid and the anode after being sealed becomes +, and then the light-emitting material is made to emit light. , This luminous source = :: electron collision with kinetic energy. Due to the gap between the grid and the cathode ... . Two or two electrodes control the bright cathode distance not exceeding 丨 mm, so one star is too, usually the anode and type: the thickness of the surface lamp is very thin at a few centimeters (two = material = cathode field emission :: efficacy reduction # 光 装置 的 THE SIZE OF THE DEVICE IS TOO LARGE Caused by "" 丨 The use of thin-film carbon material cold-cathode field emission type flat lamps in thin film process [this = plus m page 8 200414266 V. Description of the invention (4) can also be used in nano-carbon material units The electric field formed by the cathode and the anode on the light-transmitting plate allows the nano-carbon material to emit electrons, and the electrons impinge upon the light-emitting material to emit light, thereby forming a two-pole nano-carbon material cold-cathode field-emitting flat lamp. Carbon material cold cathode field emission type flat light is a flat light source. Nano technology is introduced into light-emitting elements. The physical properties of nano carbon material itself greatly reduce the initial electric field and increase the current density, which improves the energy conversion efficiency. In order to reduce energy waste, the planar light emitting mechanism can evenly distribute the light intensity in the illuminated area, and generate a large area of high uniform brightness area, which improves the appearance of fluorescent lamps and traditional light bulbs. The phenomenon of uneven illumination. The present invention has a nano-carbon material cold-cathode field emission type flat lamp and a novel manufacturing method, which can be used by the lighting industry and has the effects of power saving, high brightness, and a flat-type light source. patent.

200414266 圖式簡單說明 【實施方式】 為能更瞭解本發明之技術内容,特以 配合圖示說明如下: 具體實施例 實施例1 請參閱 具奈米礙材 如圖六所示 首先, 1 〇,此奈米 外加電場作 成含有奈米 基板内成為 破螭基板, 單元2 0中。 處於奈米碳 在一玻璃板 層銘金屬保 發光材料受 達大氣中。 40封合成為 射式平面燈 圖。 在矽基 碳管為 用下可 碳管場 下基板 可將奈 將一銘 材料單 上塗佈 護層形 電子撞 以玻璃 封裳單 為冷陰 明實施例 平面燈之 米碳管之 ,奈米碳 度之電子 米碳材料 基板為一 元1 0定位 元3 0置於 不接觸奈 薄膜和發 元4 0,此 見光,可 下基板單 完成之奈 源單元6 0 第一圖,其係本發 料冷陰極場發射式 板上製作奈 電子產生源 發射出馬密 發射子之奈 單元20,下 米碳材料單 金屬柵極單 元1 0上,而 一層銘金屬 成透光板單 擊後產生可 封裝技術將 元5 0,封合 極場發射光 1之方塊示意圖。 製造方法,发- 奈米碳材料單_ 管長度為1/^疋在 束。接著將製作$ 單元1〇,置於破^ 含有電阻材料層之 ,並絕緣於下基板 下基板單元2〇中, 米碳材料單元丨〇。 光材料,並覆上一 透光板單元40上之 見光穿透透光板到 元2 0和透光板單元 米碳管冷陰極場發 ’其結果如第六200414266 Schematic description [Embodiment] In order to better understand the technical content of the present invention, it is illustrated with the following illustrations: Specific embodiments Example 1 Please refer to the nanometer obstruction material shown in Figure 6 First, 1 〇, The nano-field is applied to an electric field to form a nano-substrate-containing substrate to be a broken substrate. Carbon in a nanometer layer of metal on a glass plate is exposed to the atmosphere. 40 seals are combined into a spot-type flat lamp. In the case of silicon-based carbon tubes, the substrate can be used under the carbon tube field. Nai can be coated on a sheet of material with a protective layer of electrons and hit a glass seal. The sheet of rice is a carbon tube of the cold lamp. The electronic substrate of the meter carbon material is a yuan 10, positioning element 30, placed on a non-contact nano film and a hair element 40, see the light, and can be placed on the substrate to complete the nano source unit 6 0. In this material, a nano-electron source is produced on the cold-cathode field emission type board to emit a nano-unit 20 of the Mami emitter, and a single-metal gate unit 10 of the lower carbon material is generated, and a layer of inscription metal is formed into a light-transmissive plate and generated after clicking The packageable technology will block 50 yuan and seal the block diagram of polar field emission light 1. Manufacturing method, hair-nano carbon material single tube length is 1 / ^ 疋 in bundle. Next, the production unit 10 is placed in a layer containing a resistive material layer, and is insulated in the lower substrate. The lower substrate unit 20 is a carbon material unit. The light material is covered with a light-transmitting plate unit 40. The light penetrates the light-transmitting plate to the element 20 and the light-transmitting plate unit.

200414266 圖式簡單說明 實施例2 本實施例與實施例1,除了不使用柵極外,其餘操作 方法與實施例1相同,其結果如第七圖。 實施例3 本實施例與實施例1,除了奈米碳管場發射子不同之 外,其餘操作方法與實施例1相同。 實施例4 本實施例與實施例1,除了奈米碳材料長度不同外, 其餘操作方法與實施例1相同。 實施例5 本實施例與實施例1,除了所使用的導電板不同外, 其餘操作方法與實施例1相同。 實施例6 本實施例與實施例1,除了柵極金屬不同外,其餘操 作方法與實施例1相同。 實施例7 本實施例與實施例1,除了封裝技術不同外,其餘操 作方法與實施例1相同。200414266 Brief description of the drawings Embodiment 2 This embodiment is the same as Embodiment 1 except that the gate is not used, and the other operation methods are the same as those of Embodiment 1. The result is shown in the seventh figure. Embodiment 3 This embodiment is the same as Embodiment 1 except that the nano carbon tube field emitter is different. Embodiment 4 This embodiment is the same as Embodiment 1 except that the length of the nano-carbon material is different. Embodiment 5 This embodiment is the same as Embodiment 1 except that the conductive plates used are different, and the remaining operations are the same as those of Embodiment 1. Embodiment 6 This embodiment is the same as Embodiment 1 except that the gate metal is different. Embodiment 7 This embodiment is the same as Embodiment 1 except that the packaging technology is different.

200414266 圖式簡單說明 實施例8 請參閱第二圖,其係本發明實施例8之奈米碳材料單 元1 0製作流程示意圖。在矽基板上1 1蒸鍍一層純鎳薄膜 1 2,利用化學氣相沉積法直接成長奈米碳管1 4於矽基板上 1 1成為奈米碳材料單元1 0。 實施例9 本實施例與實施例8,除了製作奈米碳材料所使用製 程不同外,其餘操作方法與實施例8相同。 實施例1 0 請參閱第五圖,其係本發明實施例1 0透光板單元4 0製 作流程示意圖。在玻璃板4 1上蒸鍍一層導電鋁金屬薄膜4 2 作為電極,並塗佈一層發光材料43,再蒸鍍一層鋁金屬薄 膜4 4作為保護層。 實施例1 1 本實施例與實施例1 0,除了金屬導電層不同外,其餘 操作方法與實施例1 0相同。 實施例1 2 本實施例與實施例1 〇,除了金屬保護層不同外,其餘 操作方法與實施例1 0相同。200414266 Brief description of the drawing Embodiment 8 Please refer to the second drawing, which is a schematic diagram of the manufacturing process of the nano carbon material unit 10 in Embodiment 8 of the present invention. A layer of pure nickel thin film 1 2 is vapor-deposited on a silicon substrate, and a carbon nanotube 14 is directly grown by a chemical vapor deposition method on the silicon substrate 11 to become a nano-carbon material unit 10. Embodiment 9 This embodiment and Embodiment 8 are the same as Embodiment 8 except that the process used to make the nano-carbon material is different. Embodiment 10 Please refer to the fifth figure, which is a schematic diagram of the manufacturing process of the transparent plate unit 40 of Embodiment 10 of the present invention. On the glass plate 41, a layer of conductive aluminum metal film 4 2 is evaporated as an electrode, a layer of light-emitting material 43 is coated, and a layer of aluminum metal film 4 4 is evaporated as a protective layer. Embodiment 11 This embodiment is the same as Embodiment 10 except that the metal conductive layer is different, and the rest of the operation method is the same as that of Embodiment 10. Embodiment 1 2 This embodiment is the same as Embodiment 10 except that the metal protective layer is different, and the other operation methods are the same as those of Embodiment 10.

第12頁 200414266 圖式簡單說明 本發明具奈米碳材料冷陰極場發射式平面燈及其製造 方法,係一種連續製程,可有效製作高發光效率、高亮 度、輕、薄、具平面發光方式之奈米碳材料場發射式發光 元件,大大提高能源轉換效率,顯著節省能源。特別適用 於照明裝置之應用上。 綜合上面所述,本發明無論目的、製作方法和平面燈 結構所產生之功效,均顯示其不同於習知技術之特徵,為 照明技術之突破。懇請早日賜準發明專利,嘉惠社會。另 應注意的是,上述諸多實施例僅係為了說明舉例而已,本 發明所主張之權利範圍,應以申請專利範圍所述為準,而 非僅限於上述實施例。 【圖示簡單說明】 第一圖係本發明具奈米碳材料冷陰極場發射式平面燈及其 製造方法,實施例1之示意圖。 第二圖係本發明實施例之較佳奈米碳材料單元1 〇製作流程 示意圖。 第二圖(a)為一陰極導電基板11; 第二圖(b)在11上蒸鍍一層導電層12; 第二圖(c )於1 2上蒸鍍一金屬催化劑薄膜1 3 ; 第二圖(d )形成奈米碳材料1 4。Page 12 200414266 The diagram briefly illustrates the cold-cathode field emission type flat lamp with nano carbon material according to the present invention and the manufacturing method thereof. It is a continuous process, which can effectively produce high luminous efficiency, high brightness, light, thin, and planar luminous mode The nano-carbon material field emission type light-emitting element greatly improves energy conversion efficiency and saves energy significantly. Particularly suitable for lighting applications. To sum up, the present invention, regardless of its purpose, manufacturing method, and effect of the flat lamp structure, shows its characteristics that are different from conventional technologies, and is a breakthrough in lighting technology. I urge you to grant a quasi-invention patent at an early date to benefit the society. It should also be noted that the above-mentioned embodiments are only for the purpose of illustration, and the scope of the rights claimed in the present invention shall be based on the scope of the patent application, and not limited to the above-mentioned embodiments. [Brief description of the diagram] The first diagram is a schematic diagram of the first embodiment of the present invention with a nano-carbon material cold cathode field emission type flat lamp and a manufacturing method thereof. The second diagram is a schematic diagram of a manufacturing process of a preferred nano carbon material unit 10 according to an embodiment of the present invention. The second figure (a) is a cathode conductive substrate 11; the second figure (b) is a layer of conductive layer 12 deposited on 11; the second figure (c) is a metal catalyst film 1 3 is deposited on 12; second Figure (d) forms a nano-carbon material 14.

200414266 圖式簡單說明 —-— 第三圖係本發明之下基板20製作示音 圖 第四圖係本發明柵極3 〇製作示音 圖 第五圖係本發明較佳透光板單元4〇製作流程示意圖。 第五圖(a)為一透光板41; 第五圖(b)在41上蒸鍍一層導電薄膜42; 第五圖(c )於4 2上塗佈一層發光材料4 3 ; 第五圖(d )於43上蒸鍍一層保護層44。 第六圖係本發明較佳實施例之一種具奈米碳材料冷陰極場 發射式三極平面燈60示意圖。 第七圖係本發明較佳實施例之一種具奈米碳材料陣列冷陰 極場發射式二極平面燈示意圖。 圖號說明 奈米碳材料單元 下基板單元 10 20200414266 Brief description of the diagram ----- The third diagram is a sound-producing diagram of the substrate 20 under the present invention. The fourth diagram is a grid 3 of the present invention. The fifth diagram is a preferred light-transmitting plate unit 4 of the present invention. Production process diagram. The fifth picture (a) is a light-transmitting plate 41; the fifth picture (b) is a layer of a conductive film 42 deposited on 41; the fifth picture (c) is a layer of light-emitting material 4 3 on 4 2; the fifth picture (D) A protective layer 44 is evaporated on 43. The sixth diagram is a schematic diagram of a nano-carbon material cold-cathode field-emission type tripolar flat lamp 60 with a preferred embodiment of the present invention. The seventh diagram is a schematic diagram of a cold cathode polar field emission type two-diode flat lamp with a nano carbon material array according to a preferred embodiment of the present invention. Drawing number description Nano carbon material unit Lower substrate unit 10 20

第14頁 200414266 圖式簡單說明 栅極單元 30 透光板單元 40 封裝單元 50 冷陰極場發射發光源單元 60Page 14 200414266 Brief description of the drawing grid unit 30 light transmission plate unit 40 packaging unit 50 cold cathode field emission light source unit 60

1I1HI1I 第15頁1I1HI1I Page 15

Claims (1)

200414266 六、申請專利範圍 1. 一種奈米碳材料冷陰極場發射式平面燈,係包含有: 一電絕緣體下基板; 一電阻材料層形成於該下基板上; 一陰極形成於該電阻材料層上,該陰極包含一維奈米碳 材料場發射子; 一柵極,係平行於該陰極; 一陽極形成於一第二電絕緣透光板上,該陽極係平行於 一柵極; 一發光材料形成於該陽極上; 一腔體,係由兩電絕緣板周圍密封而形成,該腔體係抽 真空而成。 2. 如申請專利範圍第1項所述之奈米碳材料冷陰極場發射 式平面燈,其中該電絕緣體下基板為玻璃、石英、壓克力 和高分子聚合材料。 3. 如申請專利範圍第1項所述之奈米碳材料冷陰極場發射 式平面燈,其中該電阻材料層為玻璃與非晶質二氧化矽。 4. 如申請專利範圍第1項所述之奈米碳材料冷陰極場發射 式平面燈,其中該陰極之材質為金屬矽化物、金屬與銦錫 氧化層。 5. 如申請專利範圍第1項所述之奈米碳材料冷陰極場發射200414266 VI. Application Patent Scope 1. A nano-carbon material cold cathode field emission type flat lamp, comprising: an electrical insulator lower substrate; a resistive material layer formed on the lower substrate; a cathode formed on the resistive material layer The cathode includes a field emitter of a carbon nanomaterial; a grid is parallel to the cathode; an anode is formed on a second electrically insulating and transparent plate; the anode is parallel to a grid; a light emitting The material is formed on the anode; a cavity is formed by sealing around two electrically insulating plates, and the cavity system is formed by evacuating. 2. The nano-carbon material cold cathode field emission type flat lamp as described in item 1 of the scope of patent application, wherein the lower substrate of the electrical insulator is glass, quartz, acrylic, and polymer materials. 3. The nano-carbon material cold-cathode field emission type flat lamp described in item 1 of the scope of patent application, wherein the resistive material layer is glass and amorphous silicon dioxide. 4. The nano-carbon material cold cathode field emission type flat lamp as described in item 1 of the scope of patent application, wherein the material of the cathode is metal silicide, metal and indium tin oxide layer. 5. Nano-carbon material cold cathode field emission as described in item 1 of the scope of patent application 第16頁 200414266 六、申請專利範圍 奈米碳管 '奈 式平面燈,其中該奈米碳材料場發射子選 米碳線或其混合之一維奈米碳材料。 6. 如申請專利II園第1項戶斤述之奈米碳 式平面燈,其中該柵極為I V陰極%發射 屬矽化物與金屬導電材料。 7. 如申請專利範圍第i項戶斤述米 式平面燈’其中該第二電絕緣體透光璃陰極二發射 克力和高分子聚合材料。 ’石央、堡 ❿ 8. 如申請專利範圍第i項戶斤述之奈米石炭材料冷 式平面燈’其中該陽極之材質為金屬矽化物穷: 銦錫氧化層。 I屬V板與 9種製造具奈米碳材料冷陰極場發射式平 該方法包栝下列步驟: 卸燈的方法, a•將奈米碳材料場發射子形成於陰極導電層上; b•將此含奈米碳材料場發射子之導電基板置一 >使扣肉· 八乐一%絶 緣體下基板内, c.在奈米碳材料場發射子上,電絕緣體下基板内放置一 柵極; d·於第二電絕緣透光板上形成一陽極導電層、發光材 和保護唐, ; e•將電絕緣體下基板和第二電絕緣透光板封裝密合,妒Page 16 200414266 VI. Scope of patent application Nano-carbon tube 'Nano-type flat lamp, in which the nano-carbon material field emission sub-selection is carbon wire or one of its mixtures. 6. For example, the nano-carbon flat lamp described in the first item of the patent application park II, wherein the grid is an IV cathode, which is a silicide and a metal conductive material. 7. As described in the scope of the patent application, the household meter type flat lamp ', wherein the second electric insulator, the transparent glass cathode, emits acrylic and polymer materials. ‘Shiyang, Bao ❿ 8. As described in item i of the patent application, the nano-carbon charcoal material cold-type flat lamp’ wherein the material of the anode is a metal silicide: an indium tin oxide layer. I belongs to V plate and 9 kinds of nano-carbon material cold cathode field emission level. The method includes the following steps: the method of unloading the lamp, a • forming the nano-carbon material field emitter on the cathode conductive layer; b • Place the conductive substrate of the nano-carbon material field emitter in one of the bottom substrates, and place the claw and Baile-% insulator on the lower substrate. C. On the nano-carbon material field emitter, place one in the lower substrate of the electrical insulator. Grid; d. Forming an anode conductive layer, a light-emitting material and a protective shield on the second electrically insulating transparent plate, e; encapsulating the lower substrate of the electric insulator and the second electrically insulating transparent plate tightly, jealous 200414266 六、申請專利範圍 成一具真空之腔體; f ·矛]用外加電場驅使奋米瑞 發光材料形成具奈米碳材料冷陰極::射式= 1式0平VA專造利方範二 印法或直接以化學氣相沉積法形成材卩…子可利用網 11 ·如申睛專利範圍第9項所述之奈山 式平面燈製造方法,其中該第一二二二2料冷陰極場發射 座見力和咼分子聚合材料。 机’ 12 ·如申睛專利範圍第9項所述之奈 化物、金屬導板與銦錫氧化層。 a為早S曰矽、金屬矽 1 3 ♦如申睛專利範圍第9項所述之奈米 式平面燈製造方法,其中該柵極為金2料、陰極場發射 材料。 兔屬矽化物與金屬導電 1 4 ·如申凊專利範圍第9項所述之奈米 式平面燈盤i生古、土 廿;# A半# u 材枓冷陰極場發射 石” f 方法,其中該奈^反材料場發射子選白太半 石^ 、奈米碳線或其混合之〆維奈米碳材料射子&自不未200414266 VI. The scope of patent application is a cavity with a vacuum; f · Spear] Use an external electric field to drive Fenmiray light-emitting materials to form cold cathodes with nano-carbon materials :: shot type = 1 type Printing method or directly forming chemical vapor deposition by chemical vapor deposition method ... Nets can be used11. The manufacturing method of Nanayama type flat lamp as described in item 9 of Shenyan's patent scope, wherein the first 2222 cold cathode Field Emitter Visibility and Plutonium Polymeric Materials. Machine '12 · As shown in item 9 of the patent scope of Shenyan, a metal oxide, a metal guide plate and an indium tin oxide layer. a is silicon and metal silicon 1 3 ♦ The nanometer type flat lamp manufacturing method as described in item 9 of Shenjing's patent scope, wherein the grid is made of gold 2 and cathode field emission material. Rabbit genus silicide and metal conduction 14 · As described in item 9 of the scope of the patent application, the nano-type flat lamp panel is ancient and earthen; # A 半 # u material cathode cold cathode field emission stone "f method, Among them, the nanomaterial anti-material field emitter is selected from the group consisting of white arsenite, nano carbon wire, or a mixture of the nano-carbon nanomaterial emitters & 第18頁 200414266 六、申請專利範圍 1 5.如申請專利範圍第9項所述之奈米碳材料冷陰極場發射 式平面燈製造方法,其中該第二電絕緣透光板為玻璃、石 英、壓克力和高分子聚合材料。 1 6.如申請專利範圍第9項所述之奈米碳材料冷陰極場發射 式平面燈製造方法,其中奈米碳材料場發射子長度以0. 1 //m至20 //m為最佳。 1 7.如申請專利範圍第9項所述奈米碳材料冷陰極場發射式 平面燈製造方法,其中陽極導電層為單晶矽、金屬矽化 物、金屬導板與銦錫氧化層。 1 8.如申請專利範圍第9項所述奈米碳材料冷陰極場發射式 平面燈製造方法,其中陰極與柵極距離以0. 0 1 // m至1 0 “ m為最佳。 1 9.如申請專利範圍第9項所述奈米碳材料冷陰極場發射式 平面燈製造方法,其中柵極與陽極距離以0. 0 0 1 // m至1 mm 為最佳。 2 〇.如申請專利範圍第9項所述奈米碳材料冷陰極場發射式 平面燈製造方法,其中陰極與陽極距離以0.001 至1 mm 為最佳。Page 18 200414266 VI. Application for patent scope 1 5. The manufacturing method of nano-carbon material cold cathode field emission type flat lamp as described in item 9 of the scope of patent application, wherein the second electrically insulating transparent plate is glass, quartz, Acrylic and polymer materials. 1 6. The method for manufacturing a nano-carbon material cold-cathode field emission type flat lamp as described in item 9 of the scope of the patent application, wherein the length of the nano-carbon material field emitter is 0. 1 // m to 20 // m is the maximum good. 1 7. The method for manufacturing a nano-carbon material cold cathode field emission type flat lamp according to item 9 of the scope of the patent application, wherein the anode conductive layer is monocrystalline silicon, a metal silicide, a metal guide plate, and an indium tin oxide layer. 1 8. The method for manufacturing a nano-carbon material cold cathode field emission type flat lamp as described in item 9 of the scope of the patent application, wherein the distance between the cathode and the grid is from 0. 0 1 // m to 1 0 "m is the best. 1 9. The method for manufacturing a nano-carbon material cold cathode field emission type flat lamp as described in item 9 of the scope of the patent application, wherein the distance between the grid and the anode is preferably 0. 0 0 1 // m to 1 mm. 2 〇. The method for manufacturing a nano-carbon material cold cathode field emission type flat lamp as described in item 9 of the scope of the patent application, wherein the distance between the cathode and the anode is preferably 0.001 to 1 mm. 200414266 六、申請專利範圍 2 1.如申請專利範圍第9項所述奈米碳材料冷陰極場發射式 平面燈製造方法,其中陰極與柵極所施加電壓以0. 0 0 1 V 至 1 0 0 0 V為最佳。 2 2.如申請專利範圍第9項所述奈米碳材料冷陰極場發射式 平面燈製造方法,其中陰極與柵極所施加電場以0. 0 0 1 \ / β m至20 V///m為最佳。200414266 VI. Application for patent scope 2 1. The method for manufacturing a nano-carbon material cold cathode field emission type flat lamp as described in item 9 of the scope of patent application, wherein the voltage applied by the cathode and the grid is from 0. 0 0 1 V to 1 0 0 0 V is the best. 2 2. The method of manufacturing a nano-carbon material cold cathode field emission type flat lamp as described in item 9 of the scope of the patent application, wherein the electric field applied by the cathode and the grid is from 0 0 0 1 \ / β m to 20 V /// m is the best. 第20頁Page 20
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