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WO2012036146A1 - Cellule solaire cristalline et son procédé de fabrication - Google Patents

Cellule solaire cristalline et son procédé de fabrication Download PDF

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Publication number
WO2012036146A1
WO2012036146A1 PCT/JP2011/070819 JP2011070819W WO2012036146A1 WO 2012036146 A1 WO2012036146 A1 WO 2012036146A1 JP 2011070819 W JP2011070819 W JP 2011070819W WO 2012036146 A1 WO2012036146 A1 WO 2012036146A1
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semiconductor layer
crystalline
solar cell
crystalline substrate
layer
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Japanese (ja)
Inventor
田中　美和
菊地　誠
片桐　弘明
小松　孝
幸男 菊地
大園　修司
靖 西方
牧子 高木
圭祐 金澤
洋介 坂尾
伸 浅利
一也 斎藤
太田　淳
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Ulvac Inc
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Ulvac Inc
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    • H—ELECTRICITY
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
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    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
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    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
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    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
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    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1648—Polycrystalline semiconductors including only Group IV materials including microcrystalline Group IV-IV materials, e.g. microcrystalline SiGe
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    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
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    • H10F77/10—Semiconductor bodies
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    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H10F77/1665—Amorphous semiconductors including only Group IV materials including Group IV-IV materials, e.g. SiGe or SiC
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a crystalline solar cell and a method for manufacturing the same.
  • This application claims priority on the basis of Japanese Patent Application No. 2010-204734 for which it applied to Japan on September 13, 2010, and uses the content here.
  • Solar cells that generate power using solar energy are power generation systems that are expected as alternative technologies for fossil fuels.
  • solar cells tend to rapidly increase production from the viewpoint of preserving the global environment. For this reason, solar cells having various structures and configurations have been actively developed.
  • crystalline silicon (Si) solar cells are most commonly produced due to performance such as photoelectric conversion efficiency and superior manufacturing costs.
  • a back contact structure having no electrode on the light receiving surface for example, a pin structure using a heterojunction of single crystal silicon and amorphous silicon, and the like are known. .
  • the conversion efficiency of the crystalline silicon solar cell is improved.
  • a so-called HIT (Heterojunction with Intrinsic Thin-Layer) type solar cell that can improve photoelectric conversion efficiency by improving semiconductor junction characteristics.
  • a HIT type solar cell includes a crystalline semiconductor substrate of one conductivity type (for example, n-type) and an amorphous semiconductor of other conductivity type (for example, p-type).
  • a semiconductor junction is formed by the layers.
  • an amorphous semiconductor layer that is substantially intrinsic is interposed between a crystalline semiconductor substrate of one conductivity type and an amorphous semiconductor layer of another conductivity type.
  • the present invention has been devised in view of the above circumstances, and an object thereof is to provide a solar cell and a method for manufacturing the solar cell that further improve photoelectric conversion characteristics.
  • a crystalline solar cell includes a flat crystalline substrate containing p-type or n-type single crystal or polycrystalline silicon and having a photoelectric conversion function; and light reception of the crystalline substrate A first semiconductor layer disposed on a surface side and containing amorphous or microcrystalline silicon; and disposed on a back surface side opposite to the light-receiving surface of the crystalline substrate and having a non-conductive type opposite to the first semiconductor layer A first semiconductor layer disposed between one of the crystalline substrate and the first semiconductor layer and between the crystalline substrate and the second semiconductor layer; And a silicon oxide layer.
  • the thickness of the first silicon oxide layer may be 10 to 30 mm.
  • a side surface of the crystalline substrate may be covered with a third silicon oxide layer.
  • a white coating film or a reflective layer that reflects light transmitted from the back surface side of the crystalline substrate toward the crystalline substrate side is formed of the second semiconductor layer. It may be provided on the back side.
  • a back electrode may be arranged so as to cover the back side of the second semiconductor layer.
  • a method for manufacturing a crystalline solar cell includes a crystalline solar cell having a photoelectric conversion function and including a planar crystalline substrate containing p-type or n-type single crystal or polycrystalline silicon.
  • a method of manufacturing a battery comprising: forming a first silicon oxide layer on a light-receiving surface side of the crystalline substrate or on a back surface side opposite to the light-receiving surface; and first including amorphous or microcrystalline silicon Forming a semiconductor layer on the light receiving surface side, and forming a second semiconductor layer containing amorphous or microcrystalline silicon having a conductivity type opposite to that of the first semiconductor layer on the back surface side.
  • the first silicon oxide layer may be formed with a thickness of 10 to 30 mm.
  • a crystalline solar cell includes a flat crystalline substrate containing p-type or n-type single crystal or polycrystalline silicon and having a photoelectric conversion function; and light reception of the crystalline substrate
  • a first semiconductor layer disposed on a surface side and containing amorphous or microcrystalline silicon; and disposed on a back surface side opposite to the light-receiving surface of the crystalline substrate and having a non-conductive type opposite to the first semiconductor layer
  • a first semiconductor layer disposed between one of the crystalline substrate and the first semiconductor layer and between the crystalline substrate and the second semiconductor layer;
  • the second is provided between the crystalline substrate and the first semiconductor layer and between the crystalline substrate and the second semiconductor layer.
  • the silicon carbide layer may be arranged.
  • a side surface of the crystalline substrate may be covered with a third silicon carbide layer.
  • a white coating film or a reflective layer that reflects light transmitted from the back surface side of the crystalline substrate toward the crystalline substrate side is formed of the second semiconductor layer. It may be provided on the back side.
  • a back electrode may be arranged so as to cover the back side of the second semiconductor layer.
  • a method for manufacturing a crystalline solar cell includes a crystalline solar cell having a photoelectric conversion function and including a planar crystalline substrate containing p-type or n-type single crystal or polycrystalline silicon.
  • a method of manufacturing a battery comprising: forming a silicon carbide layer on a light receiving surface side of the crystalline substrate or a back surface opposite to the light receiving surface; and an amorphous material having a conductivity type opposite to or the same as the crystalline substrate. Or forming a first semiconductor layer made of microcrystalline silicon on the light receiving surface side, and forming a second semiconductor layer made of amorphous or microcrystalline silicon having a conductivity type opposite to that of the first semiconductor layer on the back surface side. And comprising;
  • a crystalline solar cell includes a flat crystalline substrate containing p-type or n-type single crystal or polycrystalline silicon and having a photoelectric conversion function; and light reception by the crystalline substrate.
  • a first semiconductor layer disposed on a surface side and containing amorphous or microcrystalline silicon; and disposed on a back surface side opposite to the light-receiving surface of the crystalline substrate and having a non-conductive type opposite to the first semiconductor layer
  • a second semiconductor layer containing crystalline or microcrystalline silicon and disposed between one of the crystalline substrate and the first semiconductor layer and between the crystalline substrate and the second semiconductor layer.
  • a first aluminum oxide layer formed thereon.
  • a side surface of the crystalline substrate may be covered with a third aluminum oxide layer.
  • a white coating film or a reflective layer that reflects light transmitted from the back surface side of the crystalline substrate toward the crystalline substrate side is formed of the second semiconductor layer. It may be provided on the back side.
  • a back electrode may be arranged so as to cover the back side of the second semiconductor layer.
  • a method for manufacturing a crystalline solar cell includes a crystalline solar cell having a photoelectric conversion function and including a planar crystalline substrate containing p-type or n-type single crystal or polycrystalline silicon.
  • a method of manufacturing a battery comprising: forming an aluminum oxide layer on a light receiving surface side of the crystalline substrate or on a back surface opposite to the light receiving surface; Or forming a first semiconductor layer made of microcrystalline silicon on the light receiving surface side, and forming a second semiconductor layer made of amorphous or microcrystalline silicon having a conductivity type opposite to that of the first semiconductor layer on the back surface side. And have;
  • the crystalline solar cell according to the above [1] to [7] it is interposed between the crystalline substrate and the first semiconductor layer and between the crystalline substrate and the second semiconductor layer. Since the first silicon oxide layer is disposed, a tunnel current flows. This reduces the interface state density at one of the interface between the crystalline substrate and the first semiconductor layer and the interface between the crystalline substrate and the second semiconductor layer. For this reason, the band in the said interface curves, and a passivation effect arises. As described above, it is possible to provide a crystalline solar cell with improved photoelectric conversion characteristics.
  • the first semiconductor layer and the second semiconductor layer are formed after the first silicon oxide layer is formed on the light receiving surface side or the back surface side of the crystalline substrate.
  • the semiconductor layer By forming the semiconductor layer, the above-described passivation effect occurs. Thereby, it becomes possible to stably produce a crystalline solar cell with improved photoelectric conversion characteristics.
  • a crystalline solar cell with further improved photoelectric conversion characteristics can be obtained by performing plasma treatment on the surface of the first silicon oxide layer.
  • the first semiconductor layer and the second semiconductor layer are formed after the first silicon carbide layer is formed on the light receiving surface side or the back surface side of the crystalline substrate.
  • the semiconductor layer By forming the semiconductor layer, the above-described passivation effect can be obtained. Thereby, it becomes possible to stably produce a crystalline solar cell with improved photoelectric conversion characteristics.
  • a crystalline solar cell with further improved photoelectric conversion characteristics can be obtained by subjecting the surface of the first silicon carbide layer to plasma treatment.
  • oxidation is performed between the crystalline substrate and the first semiconductor layer, or between the crystalline substrate and the second semiconductor layer. Since the aluminum layer is disposed, a tunnel current flows. Thereby, the interface state density in one of the interface between the crystalline substrate and the first semiconductor layer and the crystal substrate and the second semiconductor layer is reduced. For this reason, the band in the said interface curves, and a passivation effect arises. As described above, it is possible to provide a crystalline solar cell with improved photoelectric conversion characteristics.
  • the first semiconductor layer and the second semiconductor layer are formed after the aluminum oxide layer is formed on the light receiving surface side or the back surface side of the crystalline substrate.
  • the passivation effect mentioned above arises.
  • a crystalline solar cell with improved photoelectric conversion characteristics can be obtained by subjecting the surface of the aluminum oxide layer to plasma treatment.
  • FIG. 1 is a cross-sectional perspective view schematically showing one structural example of the crystalline solar cell of the present invention.
  • a crystalline solar cell 1A (1) includes a crystalline substrate (base) 10, a first silicon oxide layer (20a) 20, a first semiconductor layer 11, a second semiconductor layer 12, and a transparent conductive material.
  • the film 13, the first electrode 14, the transparent conductive film 15, and the second electrode 16 are roughly configured.
  • the light receiving side of the crystalline solar cell 1A (1) is defined as a light receiving surface 1 ⁇ , and the surface facing the light receiving surface 1 ⁇ (the side opposite to the light receiving surface 1 ⁇ ) is defined as a back surface 1 ⁇ .
  • the crystalline substrate 10 is a semiconductor substrate having a photoelectric conversion function.
  • a flat substrate having a thickness of 50 ⁇ m to 200 ⁇ m and containing p-type or n-type single crystal or polycrystalline silicon (Si) can be used.
  • Si polycrystalline silicon
  • a wafer cut from a single crystal silicon ingot formed by a pulling method, a wafer cut from a polycrystalline silicon ingot formed by a casting technique, or the like can be used.
  • the first silicon oxide layer 20a is made of silicon oxide (SiOx or SiOx: H, where 0 ⁇ x ⁇ 2), and includes a surface 10a on the light-receiving surface 1 ⁇ side and a surface 10b on the back surface 1 ⁇ side of the crystalline substrate 10. It is formed so as to cover at least one.
  • the first silicon oxide layer 20a is arranged between one of the crystalline substrate 10 and the first semiconductor layer 11 and between the crystalline substrate 10 and the second semiconductor layer 12. Yes.
  • the silicon oxide layer 20 is disposed between the crystalline substrate 10 and the second semiconductor layer 12.
  • the present invention is not limited to this, and the crystalline substrate 10 and the second semiconductor layer 12 are arranged.
  • a first silicon oxide layer 20 a may be disposed between the semiconductor layer 11.
  • the thickness of the first silicon oxide layer 20a is not particularly limited as long as the tunnel current flows. Specifically, such a thickness is preferably in the range of 10 to 30 mm, for example. When the thickness of the first silicon oxide layer 20a is less than 10 mm, the curvature of the band becomes small and the passivation effect becomes small, which is not good. On the other hand, when the thickness of the first silicon oxide layer 20a exceeds 30 mm, the tunnel current is reduced, and the photoelectric conversion efficiency is thus reduced. Therefore, a preferable range of the thickness of the first silicon oxide layer 20a is 10 to 30 mm.
  • the first semiconductor layer 11 containing amorphous or microcrystalline silicon opposite to or the same conductivity type as the crystalline substrate 10 is disposed on the light receiving surface 1 ⁇ side of the crystalline substrate 10.
  • the first semiconductor layer 11 includes p-type amorphous silicon (pa-Si), p-type microcrystalline silicon (p- ⁇ c-Si). N-type amorphous silicon (na-Si) and n-type microcrystalline silicon (n- ⁇ c-Si) are included.
  • the second semiconductor layer 12 containing amorphous or microcrystalline silicon having a conductivity type opposite to that of the first semiconductor layer 11 is disposed on the back surface 1 ⁇ side of the crystalline substrate 10.
  • the second semiconductor layer 12 contains n-type amorphous silicon (na-Si) or n-type microcrystalline silicon (n- ⁇ c-Si). .
  • the transparent conductive film 13 is made of a conductive material having optical transparency (transmits sunlight), and is disposed on the light receiving surface 1 ⁇ side of the first semiconductor layer 11.
  • Examples of the constituent material of the transparent conductive film 13 include a transparent conductive film mainly composed of zinc oxide in addition to an electrically conductive oxide such as zinc oxide, tin oxide, and indium oxide in which oxygen defects are controlled.
  • ATO Sb-doped SnO 2
  • FTO which is a transparent conductive film mainly composed of tin oxide, such as AZO (Al-doped ZnO), BZO (B-doped ZnO), FZO (F-doped ZnO), and GZO (Ga-doped ZnO).
  • ITO Tin-doped In 2 O 3
  • IFO F-doped In 2 O 3
  • TAOS transparent amorphous oxide semiconductor
  • IGZO InGaZnO
  • SnO 2 or ZnO-based material formed by thermal CVD or MOCVD.
  • the transparent conductive film 13 made of these materials has irregularities called textures formed on the surface thereof.
  • the comb-shaped first electrode 14 is formed on the light receiving surface 1 ⁇ side of the transparent conductive film 13.
  • a conductive material may be appropriately selected according to the structure and process design of the crystalline solar cell 1A (1).
  • aluminum can be used for the purpose of suppressing power loss, or a low resistance material such as silver can be used.
  • the transparent conductive film 15 is disposed on the back surface 1 ⁇ side of the second semiconductor layer 12.
  • a constituent material of the transparent conductive film 15 for example, zinc oxide, tin oxide, indium tin oxide (ITO) or the like is used.
  • the comb-shaped second electrode 16 is formed on the back surface 1 ⁇ side of the transparent conductive film 15.
  • a conductive material may be appropriately selected according to the structure and process design of the crystalline solar cell 1A (1).
  • aluminum can be used for the purpose of suppressing power loss, or a low resistance material such as silver can be used.
  • a white coating film or a reflective layer is formed so as to cover the back surface 1 ⁇ side of the second semiconductor layer 12 and the second electrode 16.
  • This white coating film or reflective layer is a layer (film) for reflecting light transmitted from the back surface 10b side of the crystalline substrate 10 to the crystalline substrate 10 side.
  • the white coating film 17 is formed on the first electrode 16 will be described as an example.
  • the white coating film 17 is a white coating film having a high reflectance in the absorption wavelength region of the crystalline substrate 10.
  • a white component of the white coating film 17 for example, a compound composed of at least one selected from the group consisting of barium sulfate, magnesium oxide, and titanium oxide can be used.
  • the white coating film 17 is formed by applying a white paint composed of fine particles of the white component, a binder, and a solvent to the back surface side of the second semiconductor layer 12.
  • the white coating film 17 having such a configuration functions as a reflecting surface that diffusely reflects a part of light (sunlight) transmitted through the crystalline substrate 10 toward the back surface 10b side of the crystalline substrate 10.
  • the surface (light receiving surface) on the surface 1 ⁇ side of the crystalline solar cell 1A (1) receives sunlight
  • the sunlight incident from the surface is absorbed by the crystalline substrate 10.
  • the thickness of the crystalline substrate 10 is thin in order to reduce the amount of raw material used on the crystalline solar cell 1, the amount of light that cannot be absorbed by the crystalline substrate 10 increases. For this reason, a part of sunlight easily passes through the crystalline substrate 10.
  • part of sunlight passes through the crystalline substrate 10 in this way, part of sunlight passes through the second semiconductor layer 12 and the transparent electrode 15 and reaches the white coating film 17.
  • attained the white coating film 17 is reflected toward the surface 1 alpha side by the light reflectivity which the white coating film 17 has.
  • the light reflected by the white coating film 17 passes through the transparent electrode 15 and the second semiconductor layer 12 again and is absorbed by the crystalline substrate 10. That is, part of the light transmitted through the crystalline substrate 10 is converted into electric energy by the light reflecting function of the white coating film 17.
  • the use efficiency of light in the crystalline solar cell 1 can be improved by providing the white coating film 17 having a light reflection function.
  • the constituent material, film thickness, position, etc. of the white coating film 17 can be changed according to the optical characteristics of the crystalline substrate 10, the first electrode 14, and the second electrode 16, which are other constituent requirements.
  • By appropriately selecting the configuration of such a white coating film 17 reuse of transmitted light can be more appropriately realized. Therefore, it is possible to improve the light utilization efficiency without forcing the crystalline substrate 10, the first electrode 14, and the second electrode 16 to change the constituent materials and design rules.
  • the above-described white coating film 17 is preferably configured to have a reflectance of 90% or more particularly in a wavelength region of 500 nm to 1200 nm. If the white coating film 17 has such a reflectance, the light that can be absorbed again by the crystalline substrate 10 can be efficiently reflected from the light transmitted through the crystalline substrate 10.
  • this reflective layer can be composed of a film of aluminum, silver, copper or the like, for example.
  • the generated carriers are separated into the first semiconductor layer 11 and the second semiconductor layer 12 according to the potential gradient of the pn junction or the heterojunction portion that is the junction portion between the crystalline substrate 10 and the second semiconductor layer 12.
  • the carriers separated in this way are collected from the first electrode 14 and the second electrode 16 and thereby converted into electric energy. That is, the light absorbed by the crystalline substrate 10 is converted into electric energy by the photoelectric conversion function of the crystalline substrate 10.
  • the crystalline solar cell 1A (1) of the present invention has further improved photoelectric conversion characteristics.
  • the first silicon oxide layer 20a is disposed between the crystalline substrate 10 and the first semiconductor layer 11 and between the crystalline substrate 10 and the second semiconductor layer 12.
  • the interface state density is decreased and the band at the interface is curved.
  • a passivation effect is generated, and the crystalline solar cell 1A (1) of the present invention has improved photoelectric conversion characteristics.
  • first silicon oxide layer 20a is disposed between the crystalline substrate 10 and the first semiconductor layer 11 and between the crystalline substrate 10 and the second semiconductor layer 12. This reduces the number of defects at the silicon / silicon oxide interface. For this reason, it is possible to bend the band without additional doping.
  • the thickness of the first semiconductor layer 11 and the thickness of the second semiconductor layer 12 described above are such that the p-type semiconductor layer (for example, the first semiconductor layer 11) is relatively thick, and the n-type semiconductor.
  • a structure in which the layer forming the layer (for example, the second semiconductor layer 12) is relatively thin is preferable. If the thicknesses of the first semiconductor layer 11 and the second semiconductor layer 12 are changed in this way, the carrier generated in the p-type semiconductor layer (for example, the first semiconductor layer 11) is regenerated. Coupling is reduced and conversion efficiency is improved.
  • FIG. 2 is a cross-sectional view schematically showing a configuration example of the solar battery 1B (1) of the present embodiment.
  • portions different from the above-described first embodiment will be mainly described, and description of portions similar to the first embodiment will be omitted.
  • both the crystalline substrate 10 and the first semiconductor layer 11 and the crystalline substrate 10 and the second semiconductor layer 12 are One silicon oxide layer 20a or the second silicon oxide layer 20b is provided.
  • a first silicon oxide layer 20 a is provided between the crystalline substrate 10 and the first semiconductor layer 11, and a second silicon oxide layer is provided between the crystalline substrate 10 and the second semiconductor layer 12.
  • An example in which the layer 20b is provided is shown.
  • the first silicon oxide layer 20a or the second silicon oxide layer 20a is formed between the crystalline substrate 10 and the first semiconductor layer 11 and between the crystalline substrate 10 and the second semiconductor layer 12.
  • the silicon oxide layer 20b By disposing the silicon oxide layer 20b, more high energy carriers are collected. For this reason, it becomes possible to further improve the photoelectric conversion efficiency of the solar cell 1B (1).
  • FIG. 3 is a cross-sectional view schematically showing a configuration example of the solar battery 1C (1) of the present embodiment.
  • portions different from the above-described first embodiment will be mainly described, and description of portions similar to the first embodiment will be omitted.
  • the transparent conductive film 15 is disposed on the second semiconductor layer 12, and the first electrode 16 formed in a comb shape is disposed on the transparent conductive film 15.
  • the back surface electrode 16 is arranged so as to cover the entire surface of the second semiconductor layer 12 on the back surface 1 ⁇ side.
  • FIG. 4 is a cross-sectional view schematically showing a configuration example of the solar battery 1D (1) of the present embodiment.
  • portions different from the above-described first embodiment will be mainly described, and description of portions similar to the first embodiment will be omitted.
  • the crystalline solar cell 1A (1) of the first embodiment is formed by the following manufacturing process, for example.
  • ⁇ First embodiment> fine unevenness on the surface called texture (not shown) is formed on the crystalline substrate 10 (substrate made of silicon) by wet etching or dry etching. Next, a cleaning process is performed on the surface of the crystalline substrate 10. Next, a silicon oxide film 20 is formed on the surface of the crystalline substrate 10 on which the texture is formed.
  • the method for forming the silicon oxide film 20 on the surface of the crystalline substrate 10 is not particularly limited. Examples of such methods include thermal oxidation with water vapor or oxygen, and deposition methods such as plasma CVD and ALD (atomic layer deposition). Among them, as a method for forming a high-quality ultrathin oxide film with good controllability, for example, a method described in Japanese Patent Application Laid-Open No. 2002-064093 can be used.
  • such a method has a basic configuration, for example, a method in which the semiconductor substrate (crystalline substrate) 10 is immersed in an oxidizing chemical solution and is oxidized. Thereby, an extremely thin oxide film is formed on the surface of the crystalline substrate 10.
  • the thickness of the oxide film can be easily controlled by immersing the crystalline substrate 10 in the oxidizing chemical solution and performing the chemical oxidation treatment. Note that it is desirable to perform a process of removing a natural oxide film or impurities on the surface of the crystalline substrate 10 before the crystalline substrate 10 is immersed in the oxidizing chemical solution. This makes it possible to stably form a high quality ultrathin oxide film.
  • this oxide film may be modified by heat treatment in an inert gas atmosphere.
  • the heat treatment By performing the heat treatment on the oxide film in this manner, the leakage current density is reduced.
  • a chemically oxidized oxide film before heat treatment is in a suboxide state, that is, a state in which oxygen is deficient. For this reason, the oxide film in this state tends to have a large leakage current.
  • the suboxide can be reduced, and the interface between the substrate and the oxide film can be made smooth by the heat treatment. For this reason, the leakage current density of the oxide film can be reduced.
  • the manufacturing process of the crystalline solar cell 1 there is no practical problem even if this heat treatment is not performed.
  • the oxide film By forming the oxide film in this way, a high-quality oxide film having a thickness of 0.3 to 3 nm with little leakage current can be easily formed on the surface of the crystalline substrate 10.
  • the thickness of the oxide film can be easily controlled by adjusting the type and temperature of the oxidizing chemical solution in which the crystalline substrate 10 is immersed. This is because the film thickness of the ultrathin oxide film to be formed hardly changes when the time during which the crystalline substrate 10 is immersed in the chemical solution is longer than a certain time. In addition, since this fixed time changes with chemical
  • the type of the chemical solution is nitric acid, ozone-dissolved water, hydrogen peroxide solution, mixed solution of hydrochloric acid and hydrogen peroxide solution, mixed solution of sulfuric acid and hydrogen peroxide solution, mixed solution of ammonia and hydrogen peroxide solution, sulfuric acid And at least one chemical solution selected from a mixed solution of nitric acid, perchloric acid, and boiling water. This is because by using these chemical solutions, ultrathin oxide films having various thicknesses in the range of 0.3 to 3 nm can be formed with high film thickness controllability.
  • the inert gas is preferably at least one gas selected from nitrogen, argon, neon, hydrogen, or a mixed gas thereof. This is because, when heat treatment is performed using these inert gases, new oxidation does not occur in the oxide film due to heating. For this reason, a change in the thickness of the oxide film during the heat treatment can be prevented.
  • the heating temperature of the inert gas in the heat treatment is desirably in the range of 500 to 1200 ° C.
  • the quality of the oxide film can be improved and the leakage current density can be reduced.
  • an oxide film (silicon oxide layer 20) is formed on the surface of the crystalline substrate 10 made of silicon.
  • the oxide film is formed only on one surface (one surface, for example, the surface 10b) of the crystalline substrate 10, for example, the non-film-formed surface (the other surface, for example, the surface 10a) of the crystalline substrate 10 is masked. And the oxide film on the non-film-formed surface (the other surface) of the crystalline substrate 10 on which the oxide film is formed on both sides is removed by wet etching (single-side coating with a roller wetted with an etchant). Is used.
  • the first semiconductor layer 11 and the second semiconductor layer 12 are formed.
  • the surface of the silicon oxide layer 20 (first silicon oxide layer 20a) is exposed to plasma made of a desired process gas (hereinafter referred to as “plasma”). Also referred to as “processing”.
  • plasma a desired process gas
  • a gas for example, B 2 H 6
  • boron B
  • a gas containing phosphorus (P) for example, PH 3
  • P phosphorus
  • the plasma-treated surface of the oxide film (first silicon oxide layer 20a) by subjecting the surface of the oxide film (first silicon oxide layer 20a) to a desired plasma, the plasma-treated surface of the oxide film (first silicon oxide layer 20a) The electrical barrier between the first semiconductor layer 11 or the second semiconductor layer 12 formed on the surface is lowered. For this reason, the rectification between the surface of the oxide film (first silicon oxide layer 20a) and the first semiconductor layer 11 or the second semiconductor layer 12 becomes high, and the flow of charge becomes smoother. As a result, power generation efficiency is improved. In other words, the process of exposing the surface of the oxide film (first silicon oxide layer 20a) to desired plasma contributes to the improvement of power generation efficiency.
  • the first semiconductor layer 11 is formed on the surface 10a of the crystalline substrate 10 by performing a film forming process using, for example, a CVD method.
  • the second semiconductor layer 12 is formed by performing a film forming process using, for example, a CVD method on the back surface 10b of the crystalline substrate 10 on which the silicon oxide layer 20 is formed.
  • a film formation process using a sputtering method is performed on the surface of the first semiconductor layer 11 and the surface of the second semiconductor layer 12.
  • the transparent conductive film 13 is formed on the front surface 1 ⁇ side of the first semiconductor layer 11, and the transparent conductive film 15 is formed on the back surface 1 ⁇ side of the second semiconductor layer 12.
  • a film forming process using a sputtering method, a printing method, or a coating method is performed on the transparent conductive film 13 and the transparent conductive film 15.
  • the first electrode 14 and the second electrode 16 are formed.
  • FIG. 2 is a cross-sectional view schematically showing a configuration example of the solar battery 1B (1) of the present embodiment.
  • portions different from the above-described first embodiment will be mainly described, and description of portions similar to the first embodiment will be omitted.
  • the oxide film (first silicon oxide layer 20a) is formed only on one surface (one surface, for example, the surface 10b) of the crystalline substrate 10, but the crystalline solar cell 1B ( In the manufacturing method 1), silicon oxide layers 20 (first silicon oxide layer 20a and second silicon oxide layer 20b) are formed on both surfaces (surfaces 10a and 10b) of the crystalline substrate 10, respectively.
  • the first silicon oxide layer 20a is provided on the surface 10b
  • the second silicon oxide layer 20b is provided on the surface 10a.
  • the silicon oxide layer 20 (first silicon oxide layer) is formed between the crystalline substrate 10 and the first semiconductor layer 11 and between the crystalline substrate 10 and the second semiconductor layer 12, respectively.
  • the layer 20a and the second silicon oxide layer 20b By forming the layer 20a and the second silicon oxide layer 20b), more high energy carriers can be collected. For this reason, it is possible to further increase the photoelectric conversion efficiency.
  • FIG. 3 is a cross-sectional view schematically showing a configuration example of the solar battery 1C (1) of the present embodiment.
  • portions different from the above-described first embodiment will be mainly described, and description of portions similar to the first embodiment will be omitted.
  • the transparent conductive film 15 is formed on the second semiconductor layer 12, and the comb-shaped first electrode 16 is formed on the transparent conductive film 15.
  • the back electrode 16 is formed so as to cover the entire surface of the second semiconductor layer 12 on the back surface 1 ⁇ side.
  • FIG. 4 is a cross-sectional view schematically showing a configuration example of the crystalline solar cell 1D (1) of the present embodiment.
  • portions different from the above-described second embodiment will be mainly described, and description of portions similar to the second embodiment will be omitted.
  • the silicon oxide layer 20 (first silicon oxide layer 20a, second silicon oxide layer 20b) is formed so as to cover both surfaces (surfaces 10a, 10b) of the crystalline substrate 10.
  • the silicon oxide layer 20 (third silicon oxide layer 20c) is formed so as to cover the side surface 10c of the crystalline substrate 10.
  • the first silicon oxide layer 20a and the third silicon oxide layer 20c formed integrally with the second silicon oxide layer 20b are also disposed on the side surface 10c of the crystalline substrate 10, thereby forming a crystal.
  • the surface defects of the conductive substrate 10 are further reduced. For this reason, it is possible to further increase the photoelectric conversion efficiency.
  • Table 1 shows the results of examining the power generation efficiency of the crystalline solar cell 1 having various configurations including the silicon oxide layer 20 described above.
  • “upper surface portion” refers to the surface 10 a of the crystalline substrate 10, that is, when the silicon oxide layer 20 is provided between the crystalline substrate 10 and the first semiconductor layer 11. Indicates.
  • the “lower surface portion” refers to the case where the silicon oxide layer 20 is provided between the surface 10 b of the crystalline substrate 10, that is, between the crystalline substrate 10 and the second semiconductor layer 12.
  • the “side surface portion” refers to the case where the silicon oxide layer 20 is provided on the side surface 10 c of the crystalline substrate 10.
  • a circle indicates that the silicon oxide layer 20 is provided, and a cross indicates that the silicon oxide layer 20 is not provided. Further, in the “plasma treatment” column of Table 1, “ ⁇ ” means that a desired plasma treatment was performed, and “x” means that this plasma treatment was not performed.
  • the silicon oxide layer 20 (SiOx,
  • SiCy or SiCy: H) is used instead of silicon oxide at the position where the silicon oxide layer 20 is provided in FIGS.
  • SiCy or SiCy: H silicon carbide
  • AlOz or AlOz: H aluminum oxide layer composed of aluminum oxide
  • crystalline silicon solar cell crystalline solar cell 1 with improved photoelectric conversion characteristics can be provided.
  • silicon carbide layer or an aluminum oxide layer is provided instead of the silicon oxide layer 20
  • the above-described plasma treatment is effective, and power generation efficiency can be improved.
  • the present invention is widely applicable to crystal solar cells.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire cristalline qui comprend : un substrat cristallin plan qui contient du silicium monocristallin ou polycristallin de type p ou de type n et qui peut effectuer une conversion photoélectrique ; une première couche de semi-conducteur disposée du côté de la surface recevant la lumière du substrat cristallin et qui contient du silicium amorphe ou microcristallin ; une deuxième couche de semi-conducteur disposée sur la face arrière du substrat cristallin, à l'opposé du côté de la surface recevant la lumière, et qui contient du silicium amorphe ou microcristallin d'un type de conductivité opposé à celui de la première couche de semi-conducteur ; et une première couche d'oxyde de silicium disposée entre le substrat cristallin et la première couche de semi-conducteur ou entre le substrat cristallin et la deuxième couche de semi-conducteur.
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US11482629B2 (en) 2013-04-03 2022-10-25 Lg Electronics Inc. Solar cell
JPWO2015060437A1 (ja) * 2013-10-25 2017-03-09 シャープ株式会社 光電変換素子、光電変換モジュール、並びに、太陽光発電システム
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CN112436063A (zh) * 2020-11-13 2021-03-02 福建新峰二维材料科技有限公司 一种铸造单晶硅异质结太阳电池制备方法

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