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WO2012034372A8 - Trench vertical double diffused metal oxide semiconductor transistor - Google Patents

Trench vertical double diffused metal oxide semiconductor transistor Download PDF

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Publication number
WO2012034372A8
WO2012034372A8 PCT/CN2011/070950 CN2011070950W WO2012034372A8 WO 2012034372 A8 WO2012034372 A8 WO 2012034372A8 CN 2011070950 W CN2011070950 W CN 2011070950W WO 2012034372 A8 WO2012034372 A8 WO 2012034372A8
Authority
WO
WIPO (PCT)
Prior art keywords
well region
multitude
trench
metal oxide
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2011/070950
Other languages
French (fr)
Other versions
WO2012034372A1 (en
Inventor
Genyi Wang
Tzong Shiann Wo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CSMC Technologies Fab1 Co Ltd
CSMC Technologies Fab2 Co Ltd
Original Assignee
CSMC Technologies Fab1 Co Ltd
CSMC Technologies Fab2 Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSMC Technologies Fab1 Co Ltd, CSMC Technologies Fab2 Co Ltd filed Critical CSMC Technologies Fab1 Co Ltd
Priority to JP2013527448A priority Critical patent/JP2013539906A/en
Publication of WO2012034372A1 publication Critical patent/WO2012034372A1/en
Publication of WO2012034372A8 publication Critical patent/WO2012034372A8/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A trench vertical double diffused metal oxide semiconductor transistor includes, in part, a semiconductor substrate, an epitaxial layer formed above the substrate, a well region formed in the epitaxial layer, a multitude of trenches formed in the well region with each trench having formed therein a gate oxide layer and a polysilicon gate, a multitude of contact holes formed in the well region wherein each contact hole is positioned between a pair of adjacent trenches and has a metal disposed therein, a multitude of body contact regions positioned below the contact holes, and a multitude of source regions formed in the well region. Each source region is positioned between a trench and a contact hole. The substrate, the epitaxial layer, and the source regions are of the first conductivity type. The well region and the body contact regions are of the second conductivity type opposite the first conductivity type.
PCT/CN2011/070950 2010-09-14 2011-02-12 Trench vertical double diffused metal oxide semiconductor transistor Ceased WO2012034372A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013527448A JP2013539906A (en) 2010-09-14 2011-02-12 Trench vertical double diffused metal oxide semiconductor transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201010280057.3 2010-09-14
CN2010102800573A CN102403351A (en) 2010-09-14 2010-09-14 Trench Vertical Double Diffused Transistor

Publications (2)

Publication Number Publication Date
WO2012034372A1 WO2012034372A1 (en) 2012-03-22
WO2012034372A8 true WO2012034372A8 (en) 2012-07-19

Family

ID=45830961

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2011/070950 Ceased WO2012034372A1 (en) 2010-09-14 2011-02-12 Trench vertical double diffused metal oxide semiconductor transistor

Country Status (3)

Country Link
JP (1) JP2013539906A (en)
CN (1) CN102403351A (en)
WO (1) WO2012034372A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6577558B2 (en) * 2012-08-21 2019-09-18 ローム株式会社 Semiconductor device
CN111933690B (en) * 2020-09-24 2021-01-05 江苏宏微科技股份有限公司 A power device and method of making the same
CN113224164B (en) * 2021-04-21 2022-03-29 电子科技大学 Super junction MOS device
CN113937746A (en) * 2021-10-22 2022-01-14 深圳市良标科技有限公司 A prevent flowing backward circuit for power management
CN113990932A (en) * 2021-10-28 2022-01-28 电子科技大学 Semiconductor longitudinal device and preparation method
CN116995096A (en) * 2023-03-14 2023-11-03 安徽芯塔电子科技有限公司 Planar MOSFET device and preparation method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
JP3748337B2 (en) * 1999-02-04 2006-02-22 株式会社東芝 Semiconductor device
JP2003318395A (en) * 2002-04-19 2003-11-07 Hitachi Ltd Method for manufacturing semiconductor device
JP4004843B2 (en) * 2002-04-24 2007-11-07 Ｎｅｃエレクトロニクス株式会社 Method for manufacturing vertical MOSFET
JP2004055812A (en) * 2002-07-19 2004-02-19 Renesas Technology Corp Semiconductor device
JP4632797B2 (en) * 2005-01-21 2011-02-16 新電元工業株式会社 Semiconductor device and method for manufacturing semiconductor device
EP1959495B1 (en) * 2005-11-22 2017-09-20 Shindengen Electric Manufacturing Co., Ltd. Trench gate power semiconductor device
US20090315104A1 (en) * 2008-06-20 2009-12-24 Force Mos Technology Co. Ltd. Trench MOSFET with shallow trench structures
US8193579B2 (en) * 2008-07-29 2012-06-05 Rohm Co., Ltd. Trench type semiconductor device and fabrication method for the same
US8022471B2 (en) * 2008-12-31 2011-09-20 Force-Mos Technology Corp. Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures
JP2010186760A (en) * 2009-02-10 2010-08-26 Panasonic Corp Semiconductor device and method of manufacturing the same
US20100200912A1 (en) * 2009-02-11 2010-08-12 Force Mos Technology Co. Ltd. Mosfets with terrace irench gate and improved source-body contact
JP5775268B2 (en) * 2010-06-09 2015-09-09 ローム株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2013539906A (en) 2013-10-28
CN102403351A (en) 2012-04-04
WO2012034372A1 (en) 2012-03-22

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