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TW200707560A - Semiconductor structure with improved on resistance and breakdown voltage - Google Patents

Semiconductor structure with improved on resistance and breakdown voltage

Info

Publication number
TW200707560A
TW200707560A TW095120222A TW95120222A TW200707560A TW 200707560 A TW200707560 A TW 200707560A TW 095120222 A TW095120222 A TW 095120222A TW 95120222 A TW95120222 A TW 95120222A TW 200707560 A TW200707560 A TW 200707560A
Authority
TW
Taiwan
Prior art keywords
resistance
improved
semiconductor structure
breakdown voltage
junction structure
Prior art date
Application number
TW095120222A
Other languages
Chinese (zh)
Other versions
TWI431672B (en
Inventor
Shang-Hui Larry Tu
James Adams
Mohammed Quddus
Rajesh S Nair
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of TW200707560A publication Critical patent/TW200707560A/en
Application granted granted Critical
Publication of TWI431672B publication Critical patent/TWI431672B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0289—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H10P30/222—
    • H10P32/1406—
    • H10P32/171—

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)

Abstract

In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches bounding in part a multiplicity of striped doped regions having opposite or alternating conductivity types.
TW95120222A 2005-08-01 2006-06-07 Semiconductor structure with improved on-resistance and breakdown voltage performance TWI431672B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/193,725 US7276766B2 (en) 2005-08-01 2005-08-01 Semiconductor structure with improved on resistance and breakdown voltage performance

Publications (2)

Publication Number Publication Date
TW200707560A true TW200707560A (en) 2007-02-16
TWI431672B TWI431672B (en) 2014-03-21

Family

ID=37693382

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95120222A TWI431672B (en) 2005-08-01 2006-06-07 Semiconductor structure with improved on-resistance and breakdown voltage performance

Country Status (4)

Country Link
US (1) US7276766B2 (en)
KR (1) KR101320331B1 (en)
CN (1) CN1909245B (en)
TW (1) TWI431672B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI553866B (en) * 2014-03-07 2016-10-11 世界先進積體電路股份有限公司 Semiconductor device and method for fabricating the same

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US7381603B2 (en) * 2005-08-01 2008-06-03 Semiconductor Components Industries, L.L.C. Semiconductor structure with improved on resistance and breakdown voltage performance
JP4182986B2 (en) * 2006-04-19 2008-11-19 トヨタ自動車株式会社 Semiconductor device and manufacturing method thereof
US7436025B2 (en) * 2006-09-29 2008-10-14 Freescale Semiconductor, Inc. Termination structures for super junction devices
US7989889B1 (en) * 2008-06-17 2011-08-02 Rf Micro Devices, Inc. Integrated lateral high-voltage metal oxide semiconductor field effect transistor
US7859009B1 (en) 2008-06-17 2010-12-28 Rf Micro Devices, Inc. Integrated lateral high-voltage diode and thyristor
CN101771081B (en) * 2009-12-18 2011-04-20 东南大学 N-type super-junction transverse double-diffusion semiconductor metallic oxide transistor
US8580650B2 (en) * 2010-10-28 2013-11-12 Texas Instruments Incorporated Lateral superjunction extended drain MOS transistor
US9806190B2 (en) * 2010-10-28 2017-10-31 Texas Instruments Incorporated High voltage drain extension on thin buried oxide SOI
JP5656608B2 (en) * 2010-12-17 2015-01-21 三菱電機株式会社 Semiconductor device
CN102184860A (en) * 2011-04-08 2011-09-14 上海先进半导体制造股份有限公司 Cold MOS (Metal Oxide Semiconductor) groove padding method and cold MOS groove structure
CN102184861A (en) * 2011-04-08 2011-09-14 上海先进半导体制造股份有限公司 Trench filling method and trench structure of cold MOS (metal oxide semiconductor)
CN103022087A (en) * 2011-09-26 2013-04-03 朱江 Semiconductor chip and production method thereof
US9224806B2 (en) * 2013-08-07 2015-12-29 Infineon Technologies Ag Edge termination structure with trench isolation regions
US9466730B2 (en) * 2014-01-17 2016-10-11 Vanguard International Semiconductor Corporation Semiconductor device and method for fabricating the same
CN105097915B (en) * 2014-05-05 2018-08-14 世界先进积体电路股份有限公司 Semiconductor device and manufacturing method thereof
CN104217963A (en) * 2014-09-01 2014-12-17 吉林华微电子股份有限公司 Method for performing taper slot ion implantation to manufacture super junction of semiconductor device through taper hole drilling
US9443958B2 (en) * 2014-10-06 2016-09-13 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device and method of forming the same
CN104485285B (en) * 2014-12-25 2017-08-29 中航（重庆）微电子有限公司 A kind of superjunction devices preparation technology
US10186573B2 (en) * 2015-09-14 2019-01-22 Maxpower Semiconductor, Inc. Lateral power MOSFET with non-horizontal RESURF structure
TWI641131B (en) * 2016-08-23 2018-11-11 Nuvoton Technology Corporation Lateral double-diffused metal oxide semiconductor device
CN107316899B (en) * 2017-07-14 2020-08-28 南京溧水高新创业投资管理有限公司 Semi-super junction device and manufacturing method thereof
US11569345B2 (en) * 2020-11-23 2023-01-31 Alpha And Omega Semiconductor (Cayman) Ltd. Gas dopant doped deep trench super junction high voltage MOSFET

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI553866B (en) * 2014-03-07 2016-10-11 世界先進積體電路股份有限公司 Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
TWI431672B (en) 2014-03-21
HK1103168A1 (en) 2007-12-14
CN1909245B (en) 2012-04-25
KR101320331B1 (en) 2013-10-29
KR20070015889A (en) 2007-02-06
CN1909245A (en) 2007-02-07
US7276766B2 (en) 2007-10-02
US20070023827A1 (en) 2007-02-01

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