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WO2012015267A3 - Procédé de préparation de graphène, feuille de graphène, et dispositif l'utilisant - Google Patents

Procédé de préparation de graphène, feuille de graphène, et dispositif l'utilisant Download PDF

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Publication number
WO2012015267A3
WO2012015267A3 PCT/KR2011/005600 KR2011005600W WO2012015267A3 WO 2012015267 A3 WO2012015267 A3 WO 2012015267A3 KR 2011005600 W KR2011005600 W KR 2011005600W WO 2012015267 A3 WO2012015267 A3 WO 2012015267A3
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
same
preparing
sheet
graphene sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/005600
Other languages
English (en)
Korean (ko)
Other versions
WO2012015267A2 (fr
Inventor
홍병희
안종현
배수강
정명희
김혜리
김상진
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sungkyunkwan University Foundation for Corporate Collaboration
Original Assignee
Sungkyunkwan University Foundation for Corporate Collaboration
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sungkyunkwan University Foundation for Corporate Collaboration filed Critical Sungkyunkwan University Foundation for Corporate Collaboration
Priority to US13/813,228 priority Critical patent/US20130130011A1/en
Publication of WO2012015267A2 publication Critical patent/WO2012015267A2/fr
Publication of WO2012015267A3 publication Critical patent/WO2012015267A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/02—Single layer graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

La présente invention concerne un procédé de préparation de graphène par fourniture d'un gaz de réaction, comprenant une source de carbone, et de chaleur sur un substrat, et mise en réaction de celui-ci pour former un graphène sur le substrat. L'invention concerne également une feuille de graphène formée par le procédé, et un dispositif l'utilisant.
PCT/KR2011/005600 2010-07-30 2011-07-29 Procédé de préparation de graphène, feuille de graphène, et dispositif l'utilisant Ceased WO2012015267A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/813,228 US20130130011A1 (en) 2010-07-30 2011-07-29 Method for preparing graphene, graphene sheet, and device using same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0074323 2010-07-30
KR1020100074323A KR20120012271A (ko) 2010-07-30 2010-07-30 그래핀의 제조 방법, 그래핀 시트 및 이를 이용한 소자

Publications (2)

Publication Number Publication Date
WO2012015267A2 WO2012015267A2 (fr) 2012-02-02
WO2012015267A3 true WO2012015267A3 (fr) 2012-05-18

Family

ID=45530626

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/005600 Ceased WO2012015267A2 (fr) 2010-07-30 2011-07-29 Procédé de préparation de graphène, feuille de graphène, et dispositif l'utilisant

Country Status (3)

Country Link
US (1) US20130130011A1 (fr)
KR (1) KR20120012271A (fr)
WO (1) WO2012015267A2 (fr)

Families Citing this family (29)

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Publication number Priority date Publication date Assignee Title
SG10201908213VA (en) 2012-02-24 2019-10-30 California Inst Of Techn Method and system for graphene formation
KR101381008B1 (ko) * 2012-07-04 2014-04-04 세종대학교산학협력단 그래핀의 제조방법
KR101850112B1 (ko) * 2012-12-26 2018-04-19 한화테크윈 주식회사 그래핀, 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
KR20140096863A (ko) 2013-01-29 2014-08-06 삼성디스플레이 주식회사 그래핀 패턴 형성 방법
CN103121670B (zh) * 2013-02-19 2015-04-29 西安交通大学 远程等离子体增强原子层沉积低温生长石墨烯的方法
KR101311905B1 (ko) * 2013-05-03 2013-09-25 (주)메카스 태양광 발전용 모듈의 백시트에 방열 코팅막을 형성하는 방법
KR101482655B1 (ko) 2013-07-10 2015-01-16 한국과학기술원 탄소기반 자기조립층의 열처리를 통한 고품질 그래핀의 제조 방법
KR101842033B1 (ko) * 2014-01-06 2018-03-26 한화테크윈 주식회사 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
US9505624B2 (en) 2014-02-18 2016-11-29 Corning Incorporated Metal-free CVD coating of graphene on glass and other dielectric substrates
CN105374677B (zh) * 2014-08-25 2018-05-22 东莞市中镓半导体科技有限公司 一种在大尺寸Si衬底上制备高电子迁移率场效应晶体管的方法
US9859115B2 (en) * 2015-02-13 2018-01-02 National Taiwan University Semiconductor devices comprising 2D-materials and methods of manufacture thereof
CN104726845B (zh) * 2015-03-05 2018-05-01 中国科学院上海微系统与信息技术研究所 h-BN上石墨烯纳米带的制备方法
CN105063796B (zh) * 2015-07-21 2017-03-08 中国科学院宁波材料技术与工程研究所 一种高分子复合导电纤维及其制备方法
CN105002595B (zh) * 2015-07-21 2017-02-01 中国科学院宁波材料技术与工程研究所 一种含部分还原石墨烯的高分子复合功能纤维及其制备方法
CN104949779B (zh) * 2015-07-21 2017-09-08 中国科学技术大学 一种压力传感器及其制备方法
TWI539043B (zh) 2015-07-21 2016-06-21 財團法人工業技術研究院 石墨烯花的形成方法
JP6592766B2 (ja) * 2015-07-31 2019-10-23 川研ファインケミカル株式会社 グラフェン被覆窒化アルミニウムフィラー、その製造方法、電子材料、樹脂複合体、及び疎水化処理方法
JP6960813B2 (ja) 2017-09-20 2021-11-05 東京エレクトロン株式会社 グラフェン構造体の形成方法および形成装置
US11180373B2 (en) 2017-11-29 2021-11-23 Samsung Electronics Co., Ltd. Nanocrystalline graphene and method of forming nanocrystalline graphene
KR102592698B1 (ko) * 2017-11-29 2023-10-24 삼성전자주식회사 나노결정질 그래핀 및 나노결정질 그래핀의 형성방법
KR102532605B1 (ko) 2018-07-24 2023-05-15 삼성전자주식회사 나노결정질 그래핀 캡층을 포함하는 인터커넥트 구조체 및 이 인터커넥트 구조체를 포함하는 전자 소자
US11217531B2 (en) 2018-07-24 2022-01-04 Samsung Electronics Co., Ltd. Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure
KR102785398B1 (ko) 2018-07-25 2025-03-21 삼성전자주식회사 탄소물 직접 성장방법
KR102601607B1 (ko) 2018-10-01 2023-11-13 삼성전자주식회사 그래핀의 형성방법
CN111733456B (zh) * 2019-03-25 2021-06-15 中国科学院物理研究所 用于AlN单晶生长的复合籽晶及其制备方法
US11626282B2 (en) 2019-04-30 2023-04-11 Samsung Electronics Co., Ltd. Graphene structure and method of forming graphene structure
JP7172962B2 (ja) * 2019-11-12 2022-11-16 株式会社豊田中央研究所 導電性炭素膜の成膜方法
WO2021123078A1 (fr) * 2019-12-20 2021-06-24 National University Of Ireland, Galway Matériau d'oxyde de graphène et son procédé de production
CN115010494B (zh) * 2022-06-01 2023-01-24 星途(常州)碳材料有限责任公司 一种强化纵向热通量传输的石墨烯导热片制备方法

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KR20090043418A (ko) * 2007-10-29 2009-05-06 삼성전자주식회사 그라펜 시트 및 그의 제조방법
KR20090065206A (ko) * 2007-12-17 2009-06-22 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
KR20100055098A (ko) * 2008-11-17 2010-05-26 천승현 대면적 그래핀 층을 포함하는 전자 장치 및 이의 제조방법

Patent Citations (5)

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KR20090029621A (ko) * 2007-09-18 2009-03-23 삼성전자주식회사 그라펜 패턴 및 그의 형성방법
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Also Published As

Publication number Publication date
US20130130011A1 (en) 2013-05-23
WO2012015267A2 (fr) 2012-02-02
KR20120012271A (ko) 2012-02-09

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