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WO2012005294A1 - Electrostatic chuck device and production method for same - Google Patents

Electrostatic chuck device and production method for same Download PDF

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Publication number
WO2012005294A1
WO2012005294A1 PCT/JP2011/065483 JP2011065483W WO2012005294A1 WO 2012005294 A1 WO2012005294 A1 WO 2012005294A1 JP 2011065483 W JP2011065483 W JP 2011065483W WO 2012005294 A1 WO2012005294 A1 WO 2012005294A1
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WO
WIPO (PCT)
Prior art keywords
electrostatic chuck
substrate
electrode
workpiece
chuck device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/065483
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French (fr)
Japanese (ja)
Inventor
勝 尾沢
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Creative Technology Corp
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Creative Technology Corp
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Filing date
Publication date
Application filed by Creative Technology Corp filed Critical Creative Technology Corp
Publication of WO2012005294A1 publication Critical patent/WO2012005294A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H10P72/72
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • H10P72/7614

Definitions

  • the present invention relates to an electrostatic chuck device including an electrostatic chuck having a workpiece attracting electrode therein and a manufacturing method thereof.
  • Electrostatic chuck devices are widely used in the manufacturing processes of semiconductor devices and liquid crystal panel devices, but in recent years, particle management has become an important issue as the density of semiconductor devices increases. Therefore, an electrostatic chuck device having an embossed workpiece attracting surface in which a workpiece (object to be attracted) such as a semiconductor wafer or a glass substrate is supported by a plurality of protrusions is known. The purpose of this is to reduce as much as possible the particles adhering to the back surface of the work by reducing the contact area with the work.
  • the electrostatic chuck device having the embossed attracting surface is disclosed in, for example, Japanese Patent Application Laid-Open No. 2005-33125 (Patent Document 1), Japanese Patent Application Laid-Open No. 2008-181913 (Patent Document 2), and the like.
  • a convex portion is provided on the surface of the dielectric to which the workpiece is attracted, and a workpiece attracting electrode is formed inside the dielectric body, or a workpiece attracting electrode is formed under the dielectric. It is common to arrange.
  • Patent Document 3 a conductive region is provided at the tip of a projection formed on the surface of an insulating substrate, and a recess (concave) formed between the projections.
  • Patent Document 3 a monopolar electrostatic chuck apparatus in which a work adsorption electrode is formed by a conductive coating such as ion plating or sputtering is disclosed. This is because a conductive or semi-conductive wafer (workpiece) is brought into contact with the conductive region at the tip of the protrusion to prevent a voltage drop due to the contact resistance between the protrusion and the work, and between the work and the adsorption electrode.
  • an attracting electrode is formed inside a dielectric body having a protrusion on the surface, or the dielectric
  • a distance is generated between the workpiece suction electrode and the workpiece, and the suction force may not be sufficiently developed.
  • EUV Extreme Ultra Violet
  • the depth of focus (Z direction) is extremely shallow, and high accuracy is also required in the plane direction (XY direction).
  • Quartz glass that can be processed and has low thermal expansibility is used as a dielectric.
  • quartz glass that can be processed and has low thermal expansibility is used as a dielectric.
  • quartz glass unlike ceramic glass, it is difficult to bury a flat adsorption electrode inside quartz glass.
  • quartz glass is insufficient in strength compared to ceramic and easily breaks.
  • an electrostatic chuck device that can express a sufficient attracting force and eliminate the risk of electric discharge.
  • An electrostatic chuck is disposed on the base so that the protrusion of the base is passed through the chuck, and an insulating member is interposed between the outer peripheral surface of the protrusion and the work chucking electrode of the electrostatic chuck.
  • an object of the present invention is to provide an electrostatic chuck device that can express a sufficient attracting force while suppressing the adhesion of particles to a work as much as possible, and that eliminates the risk of discharge. is there.
  • Another object of the present invention is to provide a manufacturing method suitable for manufacturing the electrostatic chuck device.
  • the present invention is an electrostatic chuck device having an electrostatic chuck having a workpiece attracting electrode for attracting a workpiece therein, the substrate penetrating through the electrostatic chuck.
  • a plurality of protrusions protruding from the surface of the protrusion, and an embossed workpiece suction surface is formed by the top surface of the protrusion, and between the outer peripheral surface of the protrusion and the workpiece chucking electrode of the electrostatic chuck.
  • the present invention is a method for manufacturing an electrostatic chuck device having an electrostatic chuck having a workpiece chucking electrode for chucking a workpiece between two insulating sheet members on a substrate, and a plurality of electrostatic chuck devices on the surface.
  • An electrostatic chuck apparatus is characterized in that an electrostatic chuck is superposed on a substrate so as to be inserted, and an embossed workpiece attracting surface is formed by a top surface of a protrusion protruding from the surface of the electrostatic chuck. Is the method.
  • the electrostatic chuck device of the present invention has an electrostatic chuck disposed on a base so that the protrusion of the base penetrates the electrostatic chuck having a workpiece attracting electrode inside.
  • the top surfaces of the plurality of protrusions protruding toward the chuck form an embossed workpiece suction surface.
  • the shape of the protrusion first, the top surface is preferably flattened by lapping or subsequent polishing.
  • the cross-sectional shape of the protrusion is not particularly limited, such as a circle, an ellipse, or a polygon more than a triangle, but it is desirable that the outer peripheral surface of the protrusion is chamfered, preferably a circle or a shape close thereto. There should be.
  • the protrusion height of the protrusion represented by the height from the surface of the electrostatic chuck to the top surface of the protrusion is preferably from the viewpoint of reliably eliminating the possibility of foreign matters such as particles adhering to the back surface of the workpiece. Is preferably 5 ⁇ m or more, more preferably 5 ⁇ m or more and 20 ⁇ m or less. Further, from the viewpoint of the attraction force, the distance represented by the height from the surface of the workpiece attraction electrode to the top surface of the protrusion in the electrostatic chuck is preferably 50 ⁇ m or more and 300 ⁇ m or less, more preferably. Is preferably 50 ⁇ m or more and 100 ⁇ m or less.
  • the substrate is not particularly limited as long as it is formed using a low dusting material.
  • a resin such as polyimide, or a metal such as aluminum or stainless steel
  • the base made of the product etc. can be mentioned. At that time, if the same material as that of the workpiece or a material whose linear expansion coefficient is closer to that of the workpiece is used, it is possible to prevent rubbing between the workpiece due to the shape change due to thermal expansion, and to generate excessive dust. Can be suppressed.
  • the base is formed of a low thermal expansion material having a coefficient of thermal expansion of 1 ppm or less, it is advantageous in that it is possible to prevent the occurrence of rubbing as described above and to maintain dimensional accuracy. Since quartz glass and low thermal expansion glass ceramics, which are examples of such materials, have extremely small thermal expansion than ordinary glass, a substrate made of such a low thermal expansion material has EUV as well as low dust generation. The accuracy required when using an exposure machine can be satisfied.
  • a means for providing the protrusions on the base for example, a method of performing a sandblasting process or an etching process through a mask that matches the arrangement pattern of the protrusions can be used. Other methods may be used, but by forming the protrusion and the base body other than the protrusion from the same material, it is easy to form the protrusion, and a hard and brittle material such as glass is used. Even in this case, a desired protrusion can be formed on the surface of the substrate.
  • the electrostatic chuck according to the present invention has a workpiece attracting electrode inside, and the electrostatic chuck is provided on the substrate in a state where the workpiece attracting electrode is not exposed on the front and back surfaces and side surfaces of the electrostatic chuck.
  • an insulating member is interposed between the outer peripheral surface of the protrusion portion of the substrate and the workpiece attracting electrode so as to eliminate a portion where the substrate and the workpiece attracting electrode are in direct contact.
  • an insulating material is applied to the depression formed between the protrusions on the substrate to form a lower insulating layer, and a work adsorption electrode is formed thereon using the conductive material. Further, from this, an insulating material is applied to form an upper insulating layer.
  • a predetermined gap is provided between the protrusion and the outer peripheral surface so that a part of the insulating material forming the upper insulating layer is filled in the gap.
  • an insulating member made of an insulating material can be interposed between the outer peripheral surface of the protrusion and the adsorption electrode.
  • examples of the insulating material for forming the upper insulating layer and the lower insulating layer include resins and ceramics, and the upper insulating layer and the lower insulating layer may be formed of the same material. Different materials may be used, but at least the upper insulating layer formed on the workpiece adsorption surface is polyimide, polyethylene terephthalate (PET) in consideration of low dust generation and dielectric constant. It is preferably made of a resin such as a liquid crystal polymer. For forming these insulating layers, it is preferable to apply an insulating material by printing using an inkjet apparatus, screen printing, or the like.
  • a conductive material may be applied by printing a metal paint with an inkjet device or screen printing, or by sputtering or vapor deposition of metal.
  • a work adsorption electrode made of a conductive material may be formed.
  • the second method is a method in which an electrostatic chuck having a work attracting electrode is formed between two insulating sheet members, and this is bonded to a substrate to form an electrostatic chuck device.
  • the workpiece attracting electrode has an opening corresponding to the protrusion of the base in advance, and is smaller than the opening so as to penetrate between the front and back surfaces of the electrostatic chuck through this opening.
  • a through-hole having a size is formed in the electrostatic chuck. Then, the protruding portion of the substrate is inserted into the through hole, the electrostatic chuck is overlapped with the substrate, and an embossed workpiece suction surface is formed by the top surface of the protruding portion protruding on the surface of the electrostatic chuck. That's fine.
  • an adsorption electrode having a predetermined opening is formed on one side of an insulating sheet member made of resin, ceramic, or the like by metal vapor deposition, sputtering, printing, or the like.
  • an insulating sheet member made of resin, ceramic, or the like by metal vapor deposition, sputtering, printing, or the like.
  • suction electrode which has a predetermined opening part from metal foil is formed by the etching process using a mask with respect to the insulating sheet member previously provided with metal foil, such as copper foil.
  • an insulating adhesive such as silicone or epoxy resin, and another insulating sheet member is bonded to the workpiece adsorption electrode side.
  • a resin film having an adhesive layer made of a thermoplastic resin or the like on one side may be used as an insulating sheet member, and the adhesive layer of the resin film may be filled in the opening by thermocompression bonding. If a through-hole having a size smaller than the opening is formed in the electrostatic chuck, an insulating member made of an insulating adhesive is provided between the protrusion of the base inserted into the through-hole and the workpiece adsorption electrode. Will be intervened.
  • the insulating sheet member that corresponds to the upper insulating layer on the workpiece adsorption surface side and the insulating sheet member that corresponds to the lower insulating layer on the substrate side may be formed of the same material or may be made of different materials, but at least the upper insulating layer
  • the insulating sheet member is preferably made of a resin film such as a polyimide film, a PET film, or a liquid crystal polymer film in consideration of low dust generation and dielectric constant, and more preferably an upper insulating material. Both the insulating sheet member corresponding to the layer and the insulating sheet member corresponding to the upper insulating layer are preferably made of these resin films.
  • the electrostatic chuck superimposed on the substrate may be fixed on the substrate using an adhesive or an adhesive sheet coated with an adhesive, but preferably the coefficient of thermal expansion between the electrostatic chuck and the substrate. It is preferable to bond the electrostatic chuck and the substrate so that the stress generated at these interfaces is released due to the difference. This is particularly effective when the substrate is made of a low thermal expansion material such as quartz glass.
  • an electrostatic chuck and a substrate are bonded via a resin film that expresses van der Waals force (intermolecular force).
  • This adhesive film is considered to have a fine projection having a fiber structure with a high aspect ratio on the order of submicron on the surface, and exhibit adhesive force due to a very weak intermolecular force.
  • silicone resin for example, silicone resin, polyamide, styrene butadiene rubber, chlorosulfonated polyethylene rubber, acrylonitrile butadiene rubber, ethylene propylene rubber, chloroprene rubber, butadiene rubber, fluorine rubber, isobutylene isoprene rubber, Examples thereof include urethane rubber.
  • the electrostatic chuck has a substrate attracting electrode for attracting the substrate inside. That is, an intermediate insulating sheet member is provided between the workpiece adsorption electrode and the substrate adsorption electrode, having a workpiece adsorption electrode for adsorbing the workpiece between the two insulation sheet members and a substrate adsorption electrode for adsorbing the substrate. An electrostatic chuck with a gap interposed between them. At that time, the workpiece adsorption electrode and the substrate adsorption electrode have openings at positions corresponding to the protrusions of the substrate, respectively, and these openings are filled with an insulating adhesive and are smaller than the openings. If a through-hole of a size is formed in the electrostatic chuck, an insulating adhesive is formed between the base protrusion and the work suction electrode, and between the base protrusion and the base suction electrode. An insulating member will be interposed.
  • the thickness of the upper insulating layer on the workpiece adsorption surface side is preferably 25 ⁇ m or more and 200 ⁇ m or less, and preferably 50 ⁇ m or more and 100 ⁇ m or less. If at least the thickness of the upper insulating layer on the workpiece suction surface side is 25 ⁇ m, electrical insulation of the workpiece suction electrode can be ensured, and if it is 50 ⁇ m or more, the reliability can be further improved. .
  • the thickness of the upper insulating layer is 200 ⁇ m or less, there will be no problem in terms of expressing the adsorption force to the workpiece, and if it is 100 ⁇ m or less, it is advantageous in that the workpiece can be adsorbed with a sufficient force. is there.
  • the thickness of the insulating member interposed between the outer peripheral surface of the protrusion and the work adsorption electrode is 0.5 mm or more in order to ensure the insulation more reliably. Preferably, it is 0.7 mm or more and 1.5 mm or less. Insulating properties are easily ensured as the thickness of the insulating member increases. However, if the thickness of the insulating member exceeds 2 mm, the effect is not only saturated, but also the area of the workpiece attracting electrode is reduced with respect to the workpiece, which is not desirable.
  • the work attracting electrode a so-called monopolar type that applies a voltage to a work such as a semiconductor wafer or a glass substrate may be adopted, or a so-called bipolar type that provides a potential difference between the electrodes. May be adopted.
  • the electrodes may be arranged on the same plane, or the electrodes may be arranged vertically via an interelectrode insulating layer. The selection of the monopolar type or the bipolar type can be appropriately determined according to the conditions under which the apparatus is used.
  • suction electrode can be suitably determined according to the kind of workpiece
  • the thickness of the workpiece attracting electrode is not particularly limited, but is practically about 0.1 ⁇ m or more and 30 ⁇ m or less in consideration of design and the like.
  • the electrostatic chuck device of the present invention it is possible to develop a sufficient attracting force while preventing the adhesion of particles to the work as much as possible, and to prevent discharge.
  • quartz glass having a low thermal expansion, low thermal expansion glass ceramics, or the like is used as a base, an excellent adsorption force can be expressed, so that it is suitable for use in an EUV exposure machine or the like.
  • the manufacturing method of the electrostatic chuck device of the present invention as described in the second method since the electrostatic chuck is formed in advance, the performance such as insulation is confirmed and then bonded to the substrate. be able to. Therefore, even if there is a design trouble or the like, it can be grasped in advance, and an electrostatic chuck device with excellent reliability can be obtained.
  • FIG. 1 is a perspective explanatory view showing an electrostatic chuck device of the present invention.
  • FIG. 2 is a cross-sectional explanatory view of the electrostatic chuck device of FIG.
  • FIG. 3 is a schematic diagram showing a procedure for forming an electrostatic chuck.
  • FIG. 4 is a schematic plan view showing the state of the attracting electrode in the electrostatic chuck.
  • FIG. 5 is a cross-sectional explanatory view showing a modification of the electrostatic chuck device of the present invention.
  • FIG. 1 is a perspective explanatory view showing an electrostatic chuck device of the present invention.
  • FIG. 1 (a) shows a state in which an electrostatic chuck 2 is bonded to a substrate 1, and FIG. The state after bonding is shown.
  • FIG. 2 is a partial cross-sectional explanatory view showing the AA cross section in FIG.
  • the substrate 1 is formed by forming a number of quartz glass projections 1b having a height of 170 ⁇ m and a top surface diameter of 1 mm on the surface of a quartz glass substrate body 1a having a diameter of 300 mm and a thickness of 10 mm.
  • a number of quartz glass projections 1b having a height of 170 ⁇ m and a top surface diameter of 1 mm
  • the substrate 1a has a diameter of 300 mm and a thickness of 10 mm.
  • the protrusions 1b are arranged adjacent to each other with a center distance of 10 mm.
  • the substrate 1 is formed by grinding and removing surface damage by etching to form a protrusion 1b.
  • the top surface of the protrusion 1b is flattened to a flatness of 0.2 ⁇ m by lapping. Has been processed.
  • the base body 1a is formed with a refrigerant path (not shown) through which a cooling gas or the like flows.
  • the electrostatic chuck 2 disposed on the substrate has a work attracting electrode 3 formed of copper foil inside, and is represented by the height from the surface of the electrostatic chuck 2 to the top surface of the protrusion 1a.
  • the protruding height h 1 of the protrusions to be a 10 [mu] m
  • a height h 2 from the surface of the workpiece chucking electrode 3 to the top surface of the projecting portion 1a is 60 [mu] m.
  • the insulating member 6 which consists of an adhesive agent made from silicone interposes.
  • the electrostatic chuck 2 according to this example was manufactured as follows. First, as shown to Fig.3 (a), what provided the copper foil 3 with a thickness of 10 micrometers on the single side
  • surface side of the insulating sheet member 4 which consists of a polyimide film with a thickness of 50 micrometers was used. The copper foil 3 is subjected to an etching process through a mask, and as shown in FIG. 3B, the opening diameter d 1 2 mm corresponding to the position and shape of the protruding portion 1b of the substrate 1. A workpiece attracting electrode 3 having an opening 3c was formed. As shown in FIG. 4, the workpiece attracting electrode 3 is a bipolar workpiece attracting electrode having a semicircular first attracting electrode 3a and a second attracting electrode 3b. Connected to.
  • the opening 3c of the work adsorption electrode 3 is filled with the silicone adhesive 6, and the insulating sheet member 5 made of a polyimide film having a thickness of 75 ⁇ m is stacked and pressed, The excess adhesive 6 formed an adhesive layer between the insulating sheet member 4 and the insulating sheet member 5 to obtain a laminate.
  • the front and back surfaces of the laminate are penetrated by laser processing, and FIG.
  • the protrusion 1b of the substrate 1 is inserted into the through hole 7 of the electrostatic chuck 2 obtained as described above, and the both are overlapped, and an electrostatic chuck is used by using a silicone adhesive (not shown). 2 was bonded to the base body 1a to complete the electrostatic chuck device according to this example.
  • the protrusion 1b of the substrate 1 forms a workpiece attracting surface for attracting a workpiece such as a semiconductor wafer or a glass substrate, and is made of silicone remaining in the opening 3a of the workpiece attracting electrode 3.
  • the adhesive 6 forms the insulating member 6 between the outer peripheral surface of the protrusion 1b and the workpiece attracting electrode 3.
  • the electrostatic chuck device thus obtained can exhibit a high adsorption force while eliminating the risk of electric discharge, and the substrate including the protrusions is made of quartz glass. Very few. Therefore, rubbing between a workpiece such as a semiconductor wafer or a glass substrate and the suction surface is unlikely to occur, and since an embossed workpiece suction surface is provided, particle adhesion to the workpiece can be suppressed as much as possible. . Furthermore, since the shape change of the substrate is extremely small, it is possible to achieve a high level of accuracy required for an EUV exposure machine.
  • a 50 ⁇ m thick silicone resin film (manufactured by Fuso Rubber Industrial Co., Ltd .: trade name Sirius) may be used instead of the silicone adhesive. Since this resin film has fine protrusions formed on the surface and exhibits an adhesive force due to a very weak intermolecular force, the electrostatic chuck 2 can be adhered to the substrate body 1a, and an EUV exposure machine or the like. Thus, even if the electrostatic chuck device is used and exposed to a high temperature, only the electrostatic chuck 2 is not expanded and the base 1 is not distorted. Furthermore, since this resin film can be repeatedly bonded and the electrostatic chuck 2 and the substrate 1 can be easily separated, it is advantageous in terms of maintenance.
  • FIG. 5 shows a modification of the electrostatic chuck device according to the first embodiment, in which the electrostatic chuck 2 attracts the substrate 1 in addition to the workpiece attracting electrode 3 that attracts the workpiece. 8 is provided inside.
  • the work attracting electrode 3 is formed by using an insulating sheet member 4 made of a polyimide film having a thickness of 50 ⁇ m and having a copper foil 3 having a thickness of 10 ⁇ m on one side. It is the same as that of one embodiment.
  • the width of the electrode portions 8a and 8b was set to 0.7 mm, respectively, and the distance between the electrodes of the electrode portions 8a and 8b was set to 0.7 mm.
  • the substrate suction electrode 8 can be connected to a DC power source (not shown) different from the workpiece suction electrode 3.
  • a silicone adhesive 6 is applied to each of the workpiece adsorption electrode 3 and the substrate adsorption electrode 8 so that the adhesive 6 is filled in the openings and the gaps between the electrodes.
  • the insulating sheet member 4 and the insulating sheet member 5 were stacked and pressed by interposing an intermediate insulating sheet member 9 made of a polyimide film.
  • the protrusion 1b is superposed on the same base 1 as in the first embodiment except that the height of the protrusion 1b is adjusted so that the protrusion 1b is inserted through the through hole 7 of the electrostatic chuck 2.
  • the electrostatic chuck 2 is held on the substrate by applying a voltage to the substrate attracting electrode 8, and on the other hand, a workpiece such as a semiconductor wafer or a glass substrate is applied by applying a voltage to the workpiece attracting electrode 3. Can be adsorbed.
  • Base 1a Main body 1b: Protrusion part 2: Electrostatic chuck 3: Adsorption electrode 3a: First adsorption electrode 3b: Second adsorption electrode 3c: Opening part 4: Insulating sheet member 5: Insulating sheet member 6: Adhesive (insulating member) 7: Through hole 8: Substrate adsorption electrode 8a: First adsorption electrode 8b: Second adsorption electrode

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Disclosed is an electrostatic chuck device which can suppress, as much as possible, the attachment of particles to a work-piece, can achieve sufficient adsorptive force, and has eliminated concerns of electrical discharge. Also disclosed is a production method for the electrostatic chuck device. The disclosed electrostatic chuck device is provided with an electrostatic chuck which is provided on a base and which internally comprises a work-piece adsorption electrode. The base forms an embossed work-piece adsorption surface having a plurality of protruding sections passing through the electrostatic chuck and protruding from the surface of the electrostatic chuck, with an insulating member lying between the outer periphery surface of the protruding sections and the work-piece adsorption electrode of the electrostatic chuck. In contrast to electrostatic chucks wherein the work-piece electrode has opening sections in positions corresponding to protruding sections, through-holes are formed which are smaller in size than opening sections, and the protrusions of the base are inserted into the through holes, thus superimposing the electrostatic chuck to the base, and forming the electrostatic chuck device.

Description

静電チャック装置及びその製造方法Electrostatic chuck device and manufacturing method thereof

 この発明は、ワーク吸着電極を内部に有した静電チャックを基盤上に備えた静電チャック装置、及びその製造方法に関する。 The present invention relates to an electrostatic chuck device including an electrostatic chuck having a workpiece attracting electrode therein and a manufacturing method thereof.

 静電チャック装置は、半導体装置や液晶パネル装置の製造プロセス等で広く使用されているが、近年、半導体装置等の高密度化に伴い、パーティクルの管理がひとつの重要な課題になっている。そこで、半導体ウエハやガラス基板等のワーク(被吸着物)を複数の突起部で支えるようにして、エンボス状のワーク吸着面を有した静電チャック装置が知られている。これは、ワークに対する接触面積を減らして、ワークの裏面に付着するパーティクルを可及的に減らすことを目的とする。 Electrostatic chuck devices are widely used in the manufacturing processes of semiconductor devices and liquid crystal panel devices, but in recent years, particle management has become an important issue as the density of semiconductor devices increases. Therefore, an electrostatic chuck device having an embossed workpiece attracting surface in which a workpiece (object to be attracted) such as a semiconductor wafer or a glass substrate is supported by a plurality of protrusions is known. The purpose of this is to reduce as much as possible the particles adhering to the back surface of the work by reducing the contact area with the work.

 このエンボス状の吸着面を有した静電チャック装置については、例えば、特開2005-33125号公報(特許文献1)や、特開2008-181913号公報(特許文献2)等に開示されるように、ワークが吸着される誘電体の表面に凸部(突起部)を設けるようにして、この誘電体の本体内部にワーク吸着電極を形成したり、或いは、誘電体の下層にワーク吸着電極を配置するのが一般的である。 The electrostatic chuck device having the embossed attracting surface is disclosed in, for example, Japanese Patent Application Laid-Open No. 2005-33125 (Patent Document 1), Japanese Patent Application Laid-Open No. 2008-181913 (Patent Document 2), and the like. In addition, a convex portion (protrusion) is provided on the surface of the dielectric to which the workpiece is attracted, and a workpiece attracting electrode is formed inside the dielectric body, or a workpiece attracting electrode is formed under the dielectric. It is common to arrange.

 一方で、特開2008-135736号公報(特許文献3)には、絶縁性基体の表面に形成された突起部の先端に導電性領域を設けると共に、突起部間に形成された窪み(凹部)に対して、イオンプレーティングやスパッタリング等の導電性コーティングによりワーク吸着電極を形成した、単極型の静電チャック装置が開示されている。これは、導電性又は半導性のウエハ(ワーク)を突起部の先端の導電性領域に接触させて、突起部とワークとの接触抵抗による電圧降下を防ぎ、ワークと吸着電極との間に高電界の領域が発生しないようにし、また、単極型の吸着電極を構成して、ワークと吸着電極との間での電界の向きを一方向にして、その向きの制御を容易にすることで、周辺のパーティクルがウエハに引き寄せられるのを抑制するものである。 On the other hand, in Japanese Patent Application Laid-Open No. 2008-135736 (Patent Document 3), a conductive region is provided at the tip of a projection formed on the surface of an insulating substrate, and a recess (concave) formed between the projections. On the other hand, a monopolar electrostatic chuck apparatus in which a work adsorption electrode is formed by a conductive coating such as ion plating or sputtering is disclosed. This is because a conductive or semi-conductive wafer (workpiece) is brought into contact with the conductive region at the tip of the protrusion to prevent a voltage drop due to the contact resistance between the protrusion and the work, and between the work and the adsorption electrode. To prevent the generation of a high electric field region, and to configure a unipolar adsorption electrode so that the direction of the electric field between the workpiece and the adsorption electrode is one direction and the direction can be easily controlled. Thus, the peripheral particles are prevented from being attracted to the wafer.

特開2005-33125号公報JP 2005-33125 A 特開2008-181913号公報JP 2008-181913 A 特開2008-135736号公報JP 2008-135736 A

 エンボス状の吸着面を有した静電チャック装置において、上記特許文献1及び2に記載されるように、表面に突起部を備えた誘電体の本体内部に吸着電極を形成したり、この誘電体の下層に吸着電極を配置する形態では、ワーク吸着電極とワークとの間に距離が生じてしまい、吸着力を十分に発現することができないことがある。特に、近年、解像度が高いEUV(Extreme Ultra Violet)露光機を用いる場合には、焦点深度(Z方向)が極めて浅く、平面方向(X-Y方向)も高い精度が要求されることから、平坦加工が可能であって、熱膨張性の低い石英ガラスが誘電体に使用されるようになっている。ところが、石英ガラスは、セラミックと違い、その内部に平坦な吸着電極を埋設することが難しい。また、誘電体を薄くしようとする場合に、石英ガラスでは、セラミックに比べて強度が不足して割れやすい。 In an electrostatic chuck device having an embossed attracting surface, as described in Patent Documents 1 and 2, an attracting electrode is formed inside a dielectric body having a protrusion on the surface, or the dielectric In the form in which the suction electrode is arranged in the lower layer, a distance is generated between the workpiece suction electrode and the workpiece, and the suction force may not be sufficiently developed. In particular, in recent years, when an EUV (Extreme Ultra Violet) exposure machine with high resolution is used, the depth of focus (Z direction) is extremely shallow, and high accuracy is also required in the plane direction (XY direction). Quartz glass that can be processed and has low thermal expansibility is used as a dielectric. However, unlike ceramic glass, it is difficult to bury a flat adsorption electrode inside quartz glass. In addition, when trying to make the dielectric thin, quartz glass is insufficient in strength compared to ceramic and easily breaks.

 一方で、上記特許文献3に記載される静電チャック装置のように、突起部間の窪みに単独で吸着電極を備えていると、たとえ、蒸着やイオンプレーティングによってポリイミド等からなる保護膜を吸着電極の表面に形成したとしても(特許文献3の段落0032)、その保護膜と絶縁性基体の突起部とは異種材料による接合界面を形成することから、放電のおそれを排除することはできない。 On the other hand, as in the electrostatic chuck device described in Patent Document 3 above, if a suction electrode is provided alone in the recess between the protrusions, a protective film made of polyimide or the like is formed by vapor deposition or ion plating. Even if it is formed on the surface of the adsorption electrode (paragraph 0032 of Patent Document 3), the protective film and the protrusion of the insulating substrate form a bonding interface made of different materials, so the possibility of discharge cannot be excluded. .

 そこで、本発明者等は、十分な吸着力を発現することができると共に、放電のおそれを排除した静電チャック装置について鋭意検討した結果、ワークを吸着するワーク吸着電極を内部に備えた静電チャックに対して、基盤の突起部を貫通させるようにして、基盤上に静電チャックを配設し、しかも、突起部の外周面と静電チャックのワーク吸着電極との間に絶縁部材を介在させることで、上記課題を解決することができることを見出し、本発明を完成した。 Accordingly, the present inventors have made extensive studies on an electrostatic chuck device that can express a sufficient attracting force and eliminate the risk of electric discharge. An electrostatic chuck is disposed on the base so that the protrusion of the base is passed through the chuck, and an insulating member is interposed between the outer peripheral surface of the protrusion and the work chucking electrode of the electrostatic chuck. As a result, the present inventors have found that the above-mentioned problems can be solved and completed the present invention.

 したがって、本発明の目的は、ワークへのパーティクルの付着を可及的に抑制しながら、十分な吸着力を発現させることができると共に、放電のおそれを排除した静電チャック装置を提供することにある。 Accordingly, an object of the present invention is to provide an electrostatic chuck device that can express a sufficient attracting force while suppressing the adhesion of particles to a work as much as possible, and that eliminates the risk of discharge. is there.

 また、本発明の別の目的は、上記静電チャック装置を製造するのに好適な製造方法を提供することにある。 Another object of the present invention is to provide a manufacturing method suitable for manufacturing the electrostatic chuck device.

 すなわち、本発明は、ワークを吸着するためのワーク吸着電極を内部に有した静電チャックを基盤上に備えた静電チャック装置であって、基盤は、静電チャックを貫通して静電チャックの表面に突出する複数の突起部を有して、該突起部の頂面によってエンボス状のワーク吸着面を形成し、また、突起部の外周面と静電チャックのワーク吸着電極との間には、絶縁部材が介在することを特徴とする静電チャック装置である。 That is, the present invention is an electrostatic chuck device having an electrostatic chuck having a workpiece attracting electrode for attracting a workpiece therein, the substrate penetrating through the electrostatic chuck. A plurality of protrusions protruding from the surface of the protrusion, and an embossed workpiece suction surface is formed by the top surface of the protrusion, and between the outer peripheral surface of the protrusion and the workpiece chucking electrode of the electrostatic chuck. Is an electrostatic chuck device in which an insulating member is interposed.

 また、本発明は、2つの絶縁シート部材の間にワークを吸着するためのワーク吸着電極を有した静電チャックを基盤上に備えた静電チャック装置を製造する方法であって、表面に複数の突起部を有した基盤と、該突起部に対応する位置にワーク吸着電極が開口部を有して、該開口部が絶縁性の接着剤で充填された静電チャックとを用いて、先ず、ワーク吸着電極の開口部を通って静電チャックの表裏面間を貫通するように、開口部より小さい大きさの貫通孔を静電チャックに形成し、次いで、前記貫通孔に基盤の突起部を挿通させるようにして静電チャックを基盤に重ね合わせて、静電チャックの表面に突出した突起部の頂面によってエンボス状のワーク吸着面を形成することを特徴とする静電チャック装置の製造方法である。 Further, the present invention is a method for manufacturing an electrostatic chuck device having an electrostatic chuck having a workpiece chucking electrode for chucking a workpiece between two insulating sheet members on a substrate, and a plurality of electrostatic chuck devices on the surface. First, using a base having a protrusion of the above and an electrostatic chuck in which the work attracting electrode has an opening at a position corresponding to the protrusion and the opening is filled with an insulating adhesive, A through hole having a size smaller than the opening is formed in the electrostatic chuck so as to pass between the front and back surfaces of the electrostatic chuck through the opening of the workpiece attracting electrode, and then the base protrusion on the through hole. An electrostatic chuck apparatus is characterized in that an electrostatic chuck is superposed on a substrate so as to be inserted, and an embossed workpiece attracting surface is formed by a top surface of a protrusion protruding from the surface of the electrostatic chuck. Is the method.

 本発明の静電チャック装置は、ワーク吸着電極を内部に有した静電チャックに対して、基盤の突起部が貫通するようにして、基盤上に静電チャックが配設されてなり、静電チャック側に突出した複数の突起部の頂面が、エンボス状のワーク吸着面を形成する。突起部の形状について、先ず、その頂面は、ラップ処理やその後の研磨等によって、平坦化処理されているのが良い。また、突起部の横断面形状については、円形、楕円形、三角形以上の多角形など、特に制限されないが、突起部の外周面が面取りされているのが望ましく、好ましくは円形又はそれに近い形状であるのが良い。 The electrostatic chuck device of the present invention has an electrostatic chuck disposed on a base so that the protrusion of the base penetrates the electrostatic chuck having a workpiece attracting electrode inside. The top surfaces of the plurality of protrusions protruding toward the chuck form an embossed workpiece suction surface. Regarding the shape of the protrusion, first, the top surface is preferably flattened by lapping or subsequent polishing. In addition, the cross-sectional shape of the protrusion is not particularly limited, such as a circle, an ellipse, or a polygon more than a triangle, but it is desirable that the outer peripheral surface of the protrusion is chamfered, preferably a circle or a shape close thereto. There should be.

 また、静電チャックの表面から突起部の頂面までの高さで表される突起部の突出高については、ワークの裏面にパーティクル等の異物が付着するおそれを確実に排除する観点から、好ましくは5μm以上であるのが良く、より好ましくは5μm以上20μm以下であるのが良い。更に、吸着力の発現の観点から、静電チャックにおけるワーク吸着電極の表面から突起部の頂面までの高さで表される距離は、好ましくは50μm以上300μm以下であるのが良く、より好ましくは50μm以上100μm以下であるのが良い。 In addition, the protrusion height of the protrusion represented by the height from the surface of the electrostatic chuck to the top surface of the protrusion is preferably from the viewpoint of reliably eliminating the possibility of foreign matters such as particles adhering to the back surface of the workpiece. Is preferably 5 μm or more, more preferably 5 μm or more and 20 μm or less. Further, from the viewpoint of the attraction force, the distance represented by the height from the surface of the workpiece attraction electrode to the top surface of the protrusion in the electrostatic chuck is preferably 50 μm or more and 300 μm or less, more preferably. Is preferably 50 μm or more and 100 μm or less.

 本発明において、基盤は低発塵性の材料を用いて形成したものであれば特に制限はなく、ガラス製や石英ガラス製の基盤のほか、ポリイミド等の樹脂製や、アルミニウム、ステンレス等の金属製の基盤などを挙げることができる。その際、ワークと同じ材質のもの、又は、線膨張係数がワークにより近いものを使用すると、熱膨張による形状の変化によってワークとの間で擦れが発生するのを防いで、余分な発塵を抑えることができる。また、基盤を熱膨張率が1ppm以下の低熱膨張材で形成するようにすれば、上記のような擦れの発生を防ぐことができると共に、寸法精度を維持することができる点で好都合である。このような材料の例として挙げられる石英ガラスや低熱膨張ガラスセラミックスは、普通のガラスより極めて熱膨張が小さいことから、このような低熱膨張材からなる基盤は、低発塵性の観点と共に、EUV露光機を用いる場合に要求される精度を満足することができる。 In the present invention, the substrate is not particularly limited as long as it is formed using a low dusting material. In addition to a substrate made of glass or quartz glass, a resin such as polyimide, or a metal such as aluminum or stainless steel The base made of the product etc. can be mentioned. At that time, if the same material as that of the workpiece or a material whose linear expansion coefficient is closer to that of the workpiece is used, it is possible to prevent rubbing between the workpiece due to the shape change due to thermal expansion, and to generate excessive dust. Can be suppressed. Further, if the base is formed of a low thermal expansion material having a coefficient of thermal expansion of 1 ppm or less, it is advantageous in that it is possible to prevent the occurrence of rubbing as described above and to maintain dimensional accuracy. Since quartz glass and low thermal expansion glass ceramics, which are examples of such materials, have extremely small thermal expansion than ordinary glass, a substrate made of such a low thermal expansion material has EUV as well as low dust generation. The accuracy required when using an exposure machine can be satisfied.

 また、基盤に突起部を設ける手段については、例えば、突起部の配置パターンに合わせたマスクを介して、サンドブラスト加工したり、エッチング処理を行う方法等を挙げることができる。これら以外の方法であってもよいが、突起部と突起部以外の基盤本体とを同一材料から加工することで、突起部の形成が容易であり、また、ガラスのような硬くて脆い材質の場合でも、所望の突起部を基盤の表面に形成することができる。 Further, as a means for providing the protrusions on the base, for example, a method of performing a sandblasting process or an etching process through a mask that matches the arrangement pattern of the protrusions can be used. Other methods may be used, but by forming the protrusion and the base body other than the protrusion from the same material, it is easy to form the protrusion, and a hard and brittle material such as glass is used. Even in this case, a desired protrusion can be formed on the surface of the substrate.

 本発明における静電チャックは、ワーク吸着電極を内部に備えるものであり、ワーク吸着電極が静電チャックの表裏面や側面に露出しない状態で、基盤上に静電チャックが設けられる。また、基盤の突起部の外周面とワーク吸着電極との間には、絶縁部材が介在するようにして、基盤とワーク吸着電極とが直接接する部分を無くすようにしている。 The electrostatic chuck according to the present invention has a workpiece attracting electrode inside, and the electrostatic chuck is provided on the substrate in a state where the workpiece attracting electrode is not exposed on the front and back surfaces and side surfaces of the electrostatic chuck. In addition, an insulating member is interposed between the outer peripheral surface of the protrusion portion of the substrate and the workpiece attracting electrode so as to eliminate a portion where the substrate and the workpiece attracting electrode are in direct contact.

 このような静電チャックを基盤上に形成する手段としては、例えば、次のような2つの方法が挙げられる。第一の方法は、先ず、基盤上で突起部の間に形成された窪みに絶縁性材料を塗布して下部絶縁層を形成し、その上に導電性材料を用いてワーク吸着電極を形成し、更にその上から、絶縁性材料を塗布して上部絶縁層を形成する方法である。ワーク吸着電極を形成する際には、突起部の外周面との間に所定の隙間を設けるようにして、上部絶縁層を形成する絶縁性材料の一部がこの隙間に充填されるようにすれば、突起部の外周面と吸着電極との間に絶縁性材料からなる絶縁部材を介在させることができる。 As means for forming such an electrostatic chuck on the substrate, for example, there are the following two methods. In the first method, first, an insulating material is applied to the depression formed between the protrusions on the substrate to form a lower insulating layer, and a work adsorption electrode is formed thereon using the conductive material. Further, from this, an insulating material is applied to form an upper insulating layer. When forming the workpiece attracting electrode, a predetermined gap is provided between the protrusion and the outer peripheral surface so that a part of the insulating material forming the upper insulating layer is filled in the gap. For example, an insulating member made of an insulating material can be interposed between the outer peripheral surface of the protrusion and the adsorption electrode.

 この第一の方法において、上部絶縁層及び下部絶縁層を形成する絶縁性材料としては、樹脂やセラミック等を挙げることができ、上部絶縁層と下部絶縁層とは同じ材料から形成されてもよく、互いに異なる材料を用いてもよいが、少なくともワーク吸着面上に形成される上部絶縁層については、低発塵性であることや誘電率等を考慮して、ポリイミド、ポリエチレンテレフタラート(PET)、液晶ポリマー等の樹脂からなるようにするのが好ましい。また、これらの絶縁層の形成には、インクジェット装置を用いた印刷やスクリーン印刷等により絶縁性材料を塗布するのが好適である。一方、ワーク吸着電極については、金属塗料をインクジェット装置で印刷したり、スクリーン印刷するなどして、導電性材料を塗布するようにしてもよく、或いは、金属をスパッタリングしたり、蒸着するなどして、導電性材料からなるワーク吸着電極を形成するようにしてもよい。 In this first method, examples of the insulating material for forming the upper insulating layer and the lower insulating layer include resins and ceramics, and the upper insulating layer and the lower insulating layer may be formed of the same material. Different materials may be used, but at least the upper insulating layer formed on the workpiece adsorption surface is polyimide, polyethylene terephthalate (PET) in consideration of low dust generation and dielectric constant. It is preferably made of a resin such as a liquid crystal polymer. For forming these insulating layers, it is preferable to apply an insulating material by printing using an inkjet apparatus, screen printing, or the like. On the other hand, for the work adsorption electrode, a conductive material may be applied by printing a metal paint with an inkjet device or screen printing, or by sputtering or vapor deposition of metal. A work adsorption electrode made of a conductive material may be formed.

 また、第二の方法としては、2つの絶縁シート部材の間にワーク吸着電極を有した静電チャックを形成した上で、これを基盤に貼り合わせて静電チャック装置とする方法である。この場合、予め、基盤の突起部に対応させて、ワーク吸着電極が開口部を有するようにしておき、この開口部を通って静電チャックの表裏面間を貫通させるように、開口部より小さい大きさの貫通孔を静電チャックに形成する。そして、貫通孔に基盤の突起部を挿通させて、基盤に静電チャックを重ね合わせて、静電チャックの表面に突出した突起部の頂面によってエンボス状のワーク吸着面を形成するようにすればよい。 The second method is a method in which an electrostatic chuck having a work attracting electrode is formed between two insulating sheet members, and this is bonded to a substrate to form an electrostatic chuck device. In this case, the workpiece attracting electrode has an opening corresponding to the protrusion of the base in advance, and is smaller than the opening so as to penetrate between the front and back surfaces of the electrostatic chuck through this opening. A through-hole having a size is formed in the electrostatic chuck. Then, the protruding portion of the substrate is inserted into the through hole, the electrostatic chuck is overlapped with the substrate, and an embossed workpiece suction surface is formed by the top surface of the protruding portion protruding on the surface of the electrostatic chuck. That's fine.

 この第二の方法において静電チャックを形成するには、先ず、樹脂やセラミック等からなる絶縁シート部材の片面に、金属の蒸着やスパッタ、又は印刷等によって所定の開口部を有した吸着電極を形成する。或いは、予め銅箔等の金属箔を備えた絶縁シート部材に対して、マスクを用いたエッチング処理により、金属箔から所定の開口部を有した吸着電極を形成する。次いで、少なくとも開口部が、シリコーンやエポキシ樹脂等の絶縁性接着剤で充填されるようにして、ワーク吸着電極側に他の絶縁シート部材を貼り合わせる。この際、片面に熱可塑性樹脂等からなる接着層を有した樹脂フィルムを絶縁シート部材として用いて、熱圧着することで、樹脂フィルムの接着層を開口部に充填させるようにしてもよい。そして、開口部より小さい大きさの貫通孔を静電チャックに形成すれば、貫通孔に挿通された基盤の突起部とワーク吸着電極との間には、絶縁性の接着剤からなる絶縁部材が介在されることになる。 In order to form an electrostatic chuck in this second method, first, an adsorption electrode having a predetermined opening is formed on one side of an insulating sheet member made of resin, ceramic, or the like by metal vapor deposition, sputtering, printing, or the like. Form. Or the adsorption | suction electrode which has a predetermined opening part from metal foil is formed by the etching process using a mask with respect to the insulating sheet member previously provided with metal foil, such as copper foil. Next, at least the opening is filled with an insulating adhesive such as silicone or epoxy resin, and another insulating sheet member is bonded to the workpiece adsorption electrode side. At this time, a resin film having an adhesive layer made of a thermoplastic resin or the like on one side may be used as an insulating sheet member, and the adhesive layer of the resin film may be filled in the opening by thermocompression bonding. If a through-hole having a size smaller than the opening is formed in the electrostatic chuck, an insulating member made of an insulating adhesive is provided between the protrusion of the base inserted into the through-hole and the workpiece adsorption electrode. Will be intervened.

 ワーク吸着面側の上部絶縁層にあたる絶縁シート部材と、基盤側の下部絶縁層にあたる絶縁シート部材とは、同じ材料から形成されてもよく、互いに異なる材料を用いてもよいが、少なくとも上部絶縁層にあたる絶縁シート部材は、低発塵性であることや誘電率等を考慮して、好ましくは、ポリイミドフィルム、PETフィルム、液晶ポリマーフィルム等の樹脂フィルムからなるのが良く、より好ましくは、上部絶縁層にあたる絶縁シート部材及び上部絶縁層にあたる絶縁シート部材ともに、これらの樹脂フィルムからなるのが良い。 The insulating sheet member that corresponds to the upper insulating layer on the workpiece adsorption surface side and the insulating sheet member that corresponds to the lower insulating layer on the substrate side may be formed of the same material or may be made of different materials, but at least the upper insulating layer The insulating sheet member is preferably made of a resin film such as a polyimide film, a PET film, or a liquid crystal polymer film in consideration of low dust generation and dielectric constant, and more preferably an upper insulating material. Both the insulating sheet member corresponding to the layer and the insulating sheet member corresponding to the upper insulating layer are preferably made of these resin films.

 また、基盤上に重ね合わせた静電チャックは、接着剤や接着剤が塗布された接着シート等を用いて基盤上に固着してもよいが、好ましくは、静電チャックと基盤の熱膨張率の違いによってこれらの界面で生じる応力が解放されるようにして、静電チャックと基盤とを接着するのが良い。特に、基盤が石英ガラス等のような低熱膨張材からなる場合には効果的である。具体的な手段としては、例えば、ファンデルワールス力(分子間力)を発現する樹脂フィルムを介して、静電チャックと基盤とを接着する方法である。この接着フィルムは、表面にサブミクロンオーダーの高アスペクト比の繊維構造を有するような微細な突起が形成されて、非常に弱い分子間力により粘着力を発現すると考えられる。このような接着フィルムを形成する材料としては、例えば、シリコーン樹脂、ポリアミド、スチレンブタジエンゴム、クロロスルホン化ポリエチレンゴム、アクリロニトリルブタジエンゴム、エチレンプロピレンゴム、クロロプレンゴム、ブタジエンゴム、フッ素ゴム、イソブチレンイソプレンゴム、ウレタンゴム等を挙げることができる。 The electrostatic chuck superimposed on the substrate may be fixed on the substrate using an adhesive or an adhesive sheet coated with an adhesive, but preferably the coefficient of thermal expansion between the electrostatic chuck and the substrate. It is preferable to bond the electrostatic chuck and the substrate so that the stress generated at these interfaces is released due to the difference. This is particularly effective when the substrate is made of a low thermal expansion material such as quartz glass. As a specific means, for example, an electrostatic chuck and a substrate are bonded via a resin film that expresses van der Waals force (intermolecular force). This adhesive film is considered to have a fine projection having a fiber structure with a high aspect ratio on the order of submicron on the surface, and exhibit adhesive force due to a very weak intermolecular force. As a material for forming such an adhesive film, for example, silicone resin, polyamide, styrene butadiene rubber, chlorosulfonated polyethylene rubber, acrylonitrile butadiene rubber, ethylene propylene rubber, chloroprene rubber, butadiene rubber, fluorine rubber, isobutylene isoprene rubber, Examples thereof include urethane rubber.

 また、他の例としては、静電チャックが基盤を吸着するための基盤吸着電極を内部に有するようにする方法である。すなわち、2つの絶縁シート部材の間にワークを吸着するためのワーク吸着電極と基盤を吸着するための基盤吸着電極とを有して、ワーク吸着電極と基盤吸着電極との間に中間絶縁シート部材を介在させた静電チャックとする。その際、ワーク吸着電極及び基盤吸着電極には、それぞれ基盤の突起部に対応する位置に開口部を有して、これらの開口部を絶縁性の接着剤で充填しておき、開口部より小さい大きさの貫通孔を静電チャックに形成すれば、基盤の突起部とワーク吸着電極との間、及び、基盤の突起部と基盤吸着電極との間には、それぞれ絶縁性の接着剤からなる絶縁部材が介在されることになる。 Further, as another example, there is a method in which the electrostatic chuck has a substrate attracting electrode for attracting the substrate inside. That is, an intermediate insulating sheet member is provided between the workpiece adsorption electrode and the substrate adsorption electrode, having a workpiece adsorption electrode for adsorbing the workpiece between the two insulation sheet members and a substrate adsorption electrode for adsorbing the substrate. An electrostatic chuck with a gap interposed between them. At that time, the workpiece adsorption electrode and the substrate adsorption electrode have openings at positions corresponding to the protrusions of the substrate, respectively, and these openings are filled with an insulating adhesive and are smaller than the openings. If a through-hole of a size is formed in the electrostatic chuck, an insulating adhesive is formed between the base protrusion and the work suction electrode, and between the base protrusion and the base suction electrode. An insulating member will be interposed.

 第一の方法、及び第二の方法ともに、ワーク吸着面側の上部絶縁層の厚みは、25μm以上200μm以下であるのが良く、好ましくは50μm以上100μm以下であるのが良い。少なくともワーク吸着面側の上部絶縁層の厚みが25μmであれば、ワーク吸着電極の電気的絶縁を確保することができ、50μm以上であれば、その信頼性をより十分なものとすることができる。一方で、上部絶縁層の厚みが200μm以下であれば、ワークに対する吸着力の発現の点で問題になることはなく、100μm以下であれば、より十分な力でワークを吸着できる点で有利である。また、突起部の外周面とワーク吸着電極との間に介在させる絶縁部材の厚み(突起部外周面とワーク吸着電極との距離)は、より確実に絶縁性を担保するために0.5mm以上であるのが良く、好ましくは0.7mm以上1.5mm以下であるのが良い。絶縁部材の厚みが増す分だけ絶縁性をより確保し易いが、絶縁部材の厚みが2mmを超えると効果が飽和するばかりか、ワークに対してワーク吸着電極の面積が減るため望ましくない。 In both the first method and the second method, the thickness of the upper insulating layer on the workpiece adsorption surface side is preferably 25 μm or more and 200 μm or less, and preferably 50 μm or more and 100 μm or less. If at least the thickness of the upper insulating layer on the workpiece suction surface side is 25 μm, electrical insulation of the workpiece suction electrode can be ensured, and if it is 50 μm or more, the reliability can be further improved. . On the other hand, if the thickness of the upper insulating layer is 200 μm or less, there will be no problem in terms of expressing the adsorption force to the workpiece, and if it is 100 μm or less, it is advantageous in that the workpiece can be adsorbed with a sufficient force. is there. In addition, the thickness of the insulating member interposed between the outer peripheral surface of the protrusion and the work adsorption electrode (the distance between the outer peripheral surface of the protrusion and the work adsorption electrode) is 0.5 mm or more in order to ensure the insulation more reliably. Preferably, it is 0.7 mm or more and 1.5 mm or less. Insulating properties are easily ensured as the thickness of the insulating member increases. However, if the thickness of the insulating member exceeds 2 mm, the effect is not only saturated, but also the area of the workpiece attracting electrode is reduced with respect to the workpiece, which is not desirable.

 更に、ワーク吸着電極については、半導体ウエハやガラス基板等のワークとの間で電圧を印加する、いわゆる単極型のものを採用してもよく、或いは、電極間に電位差を設ける、いわゆる双極型のものを採用してもよい。双極型のワーク吸着電極の場合には、同一平面状に電極を並べるようにしてもよく、電極間絶縁層を介して、上下に電極を並べるようにしてもよい。単極型又は双極型の選択は、装置が使用される条件等に応じて適宜決定できる。また、ワーク吸着電極の形状は、例えば、平板状、半円状、櫛歯状やメッシュのようなパターン形状など、ワークの種類等に応じて適宜決定することができる。更に、ワーク吸着電極の厚みは特に制限されないが、設計等を考慮すれば、実用上、0.1μm以上30μm以下程度である。 Furthermore, as the work attracting electrode, a so-called monopolar type that applies a voltage to a work such as a semiconductor wafer or a glass substrate may be adopted, or a so-called bipolar type that provides a potential difference between the electrodes. May be adopted. In the case of a bipolar work attracting electrode, the electrodes may be arranged on the same plane, or the electrodes may be arranged vertically via an interelectrode insulating layer. The selection of the monopolar type or the bipolar type can be appropriately determined according to the conditions under which the apparatus is used. Moreover, the shape of the workpiece | work adsorption | suction electrode can be suitably determined according to the kind of workpiece | work etc., such as flat shape, semicircle shape, a comb-like shape, and a pattern shape like a mesh, for example. Furthermore, the thickness of the workpiece attracting electrode is not particularly limited, but is practically about 0.1 μm or more and 30 μm or less in consideration of design and the like.

 本発明の静電チャック装置によれば、ワークへのパーティクルの付着を可及的に抑制しながら、十分な吸着力を発現させることができると共に、放電を防止することができる。特に、熱膨張の小さい石英ガラスや低熱膨張ガラスセラミックス等を基盤に用いた場合でも、優れた吸着力を発現することができるため、EUV露光機等で使用するのに好適である。 According to the electrostatic chuck device of the present invention, it is possible to develop a sufficient attracting force while preventing the adhesion of particles to the work as much as possible, and to prevent discharge. In particular, even when quartz glass having a low thermal expansion, low thermal expansion glass ceramics, or the like is used as a base, an excellent adsorption force can be expressed, so that it is suitable for use in an EUV exposure machine or the like.

 また、上記第二の方法で説明したような、本発明の静電チャック装置の製造方法では、予め静電チャックを形成することから、絶縁性等の性能を確認してから、基盤に貼り合わせることができる。そのため、万が一、設計上のトラブル等があっても、事前に把握することができ、信頼性に優れた静電チャック装置を得ることができる。 Moreover, in the manufacturing method of the electrostatic chuck device of the present invention as described in the second method, since the electrostatic chuck is formed in advance, the performance such as insulation is confirmed and then bonded to the substrate. be able to. Therefore, even if there is a design trouble or the like, it can be grasped in advance, and an electrostatic chuck device with excellent reliability can be obtained.

図1は、本発明の静電チャック装置を示す斜視説明図である。FIG. 1 is a perspective explanatory view showing an electrostatic chuck device of the present invention. 図2は、図1の静電チャック装置の断面説明図である。FIG. 2 is a cross-sectional explanatory view of the electrostatic chuck device of FIG. 図3は、静電チャックを形成する手順を示す模式図である。FIG. 3 is a schematic diagram showing a procedure for forming an electrostatic chuck. 図4は、静電チャックにおける吸着電極の様子を示す平面模式図である。FIG. 4 is a schematic plan view showing the state of the attracting electrode in the electrostatic chuck. 図5は、本発明の静電チャック装置の変形例を示す断面説明図である。FIG. 5 is a cross-sectional explanatory view showing a modification of the electrostatic chuck device of the present invention.

 以下、添付した図面に基づきながら、本発明をより具体的に説明する。 Hereinafter, the present invention will be described in more detail with reference to the attached drawings.

[第一の実施形態]
 図1は、本発明の静電チャック装置を示す斜視説明図であって、図1(a)は、静電チャック2を基盤1に貼り合わせる様子を示すものであり、図1(b)は、貼り合わせた後の状態を示すものである。また、図2は、図1におけるA-A断面を示す一部断面説明図である。このうち、基盤1は、直径300mm×厚さ10mmの石英ガラス製の基盤本体1aの表面に、高さ170μm、頂面の直径1mmの石英ガラス製の突起部1bが多数形成されたものであり、図2に示す断面図において、突起部1bは中心間距離10mmで互いに隣接して配置される。この基盤1は、研削加工により形状を作り、エッチングによって表面ダメージを除去して、突起部1bを形成したものであり、突起部1bの頂面は、ラップ加工によって平面度が0.2μmに平坦化処理されている。また、基盤本体1aには、冷却ガス等を流す冷媒経路(図示外)が形成されている。
[First embodiment]
FIG. 1 is a perspective explanatory view showing an electrostatic chuck device of the present invention. FIG. 1 (a) shows a state in which an electrostatic chuck 2 is bonded to a substrate 1, and FIG. The state after bonding is shown. FIG. 2 is a partial cross-sectional explanatory view showing the AA cross section in FIG. Of these, the substrate 1 is formed by forming a number of quartz glass projections 1b having a height of 170 μm and a top surface diameter of 1 mm on the surface of a quartz glass substrate body 1a having a diameter of 300 mm and a thickness of 10 mm. In the cross-sectional view shown in FIG. 2, the protrusions 1b are arranged adjacent to each other with a center distance of 10 mm. The substrate 1 is formed by grinding and removing surface damage by etching to form a protrusion 1b. The top surface of the protrusion 1b is flattened to a flatness of 0.2 μm by lapping. Has been processed. The base body 1a is formed with a refrigerant path (not shown) through which a cooling gas or the like flows.

 また、基盤上に配設された静電チャック2は、銅箔から形成したワーク吸着電極3を内部に備えており、静電チャック2の表面から突起部1aの頂面までの高さで表される突起部の突出高hは10μmであり、ワーク吸着電極3の表面から突起部1aの頂面までの高さhは60μmである。そして、基盤1の突起部1bの外周面とワーク吸着電極3との間には、シリコーン製の接着剤からなる絶縁部材6が介在する。 Moreover, the electrostatic chuck 2 disposed on the substrate has a work attracting electrode 3 formed of copper foil inside, and is represented by the height from the surface of the electrostatic chuck 2 to the top surface of the protrusion 1a. the protruding height h 1 of the protrusions to be a 10 [mu] m, a height h 2 from the surface of the workpiece chucking electrode 3 to the top surface of the projecting portion 1a is 60 [mu] m. And between the outer peripheral surface of the protrusion part 1b of the base | substrate 1, and the workpiece | work adsorption | suction electrode 3, the insulating member 6 which consists of an adhesive agent made from silicone interposes.

 この実施例に係る静電チャック2は、次のようにして作製した。先ず、図3(a)に示すように、厚さ50μmのポリイミドフィルムからなる絶縁シート部材4の片面側に、厚さ10μmの銅箔3を備えたものを用いた。この銅箔3に対して、マスクを介してエッチング処理を行い、図3(b)に示すように、基盤1の突起部1bの位置と形状とに対応させて、開口径d=2mmの開口部3cを有するワーク吸着電極3を形成した。このワーク吸着電極3は、図4に示すように、半円状の第一吸着電極3aと第二吸着電極3bとを有した双極型のワーク吸着電極を構成しており、図示外の直流電源に接続される。 The electrostatic chuck 2 according to this example was manufactured as follows. First, as shown to Fig.3 (a), what provided the copper foil 3 with a thickness of 10 micrometers on the single side | surface side of the insulating sheet member 4 which consists of a polyimide film with a thickness of 50 micrometers was used. The copper foil 3 is subjected to an etching process through a mask, and as shown in FIG. 3B, the opening diameter d 1 = 2 mm corresponding to the position and shape of the protruding portion 1b of the substrate 1. A workpiece attracting electrode 3 having an opening 3c was formed. As shown in FIG. 4, the workpiece attracting electrode 3 is a bipolar workpiece attracting electrode having a semicircular first attracting electrode 3a and a second attracting electrode 3b. Connected to.

 次いで、図3(c)に示すように、ワーク吸着電極3の開口部3cにシリコーン製の接着剤6を充填し、厚さ75μmのポリイミドフィルムからなる絶縁シート部材5を重ねてプレス加工し、余った接着剤6が絶縁シート部材4と絶縁シート部材5との間で接着層を形成するようにして、積層体を得た。次いで、吸着電極3の開口部3cと同心円となるようにして、バリの形成を防いでパーティクルの発生を抑えるように、レーザー加工によって積層体の表裏面間を貫通させて、図3(d)に示すように、開口径d=1.1mmの貫通孔7を形成して、静電チャック2を得た。 Next, as shown in FIG. 3C, the opening 3c of the work adsorption electrode 3 is filled with the silicone adhesive 6, and the insulating sheet member 5 made of a polyimide film having a thickness of 75 μm is stacked and pressed, The excess adhesive 6 formed an adhesive layer between the insulating sheet member 4 and the insulating sheet member 5 to obtain a laminate. Next, in order to be concentric with the opening 3c of the attracting electrode 3, so as to prevent the formation of burrs and suppress the generation of particles, the front and back surfaces of the laminate are penetrated by laser processing, and FIG. The electrostatic chuck 2 was obtained by forming a through hole 7 having an opening diameter d 2 = 1.1 mm as shown in FIG.

 そして、上記で得られた静電チャック2の貫通孔7に基盤1の突起部1bを挿通させるようにして、両者を重ね合わせ、シリコーン製の接着剤(図示外)を用いて、静電チャック2を基盤本体1aに貼り合わせることで、本実施例に係る静電チャック装置を完成させた。得られた静電チャック装置は、基盤1の突起部1bが、半導体ウエハやガラス基板等のワークを吸着させるワーク吸着面を形成し、また、ワーク吸着電極3の開口部3aに残ったシリコーン製の接着剤6が、突起部1bの外周面とワーク吸着電極3との間で絶縁部材6を形成する。 Then, the protrusion 1b of the substrate 1 is inserted into the through hole 7 of the electrostatic chuck 2 obtained as described above, and the both are overlapped, and an electrostatic chuck is used by using a silicone adhesive (not shown). 2 was bonded to the base body 1a to complete the electrostatic chuck device according to this example. In the obtained electrostatic chuck device, the protrusion 1b of the substrate 1 forms a workpiece attracting surface for attracting a workpiece such as a semiconductor wafer or a glass substrate, and is made of silicone remaining in the opening 3a of the workpiece attracting electrode 3. The adhesive 6 forms the insulating member 6 between the outer peripheral surface of the protrusion 1b and the workpiece attracting electrode 3.

 このようにして得られた静電チャック装置は、放電のおそれを排除しながら、高い吸着力を発現でき、しかも、突起部を含めて基盤が石英ガラスからなることから、熱膨張による形状変化が極めて少ない。そのため、半導体ウエハやガラス基板等のワークと吸着面との間での擦れが生じ難く、また、エンボス状のワーク吸着面を備えることから、ワークへのパーティクル付着を可及的に抑えることができる。更には、基盤の形状変化が極めて少ないことから、EUV露光機で要求されるレベルの高い精度を達成することができる。 The electrostatic chuck device thus obtained can exhibit a high adsorption force while eliminating the risk of electric discharge, and the substrate including the protrusions is made of quartz glass. Very few. Therefore, rubbing between a workpiece such as a semiconductor wafer or a glass substrate and the suction surface is unlikely to occur, and since an embossed workpiece suction surface is provided, particle adhesion to the workpiece can be suppressed as much as possible. . Furthermore, since the shape change of the substrate is extremely small, it is possible to achieve a high level of accuracy required for an EUV exposure machine.

 また、静電チャック2を基盤本体1aに貼り合わせる際、シリコーン製の接着剤のかわりに厚さ50μmのシリコーン樹脂フィルム(扶桑ゴム産業社製:商品名シリウス)を用いるようにしてもよい。この樹脂フィルムは、表面に微細な突起が形成されて非常に弱い分子間力による粘着力を発現することから、静電チャック2を基盤本体1aに接着させることができ、また、EUV露光機等で静電チャック装置を使用して高温に晒されても、静電チャック2のみが膨張して基盤1に歪みを与えるようなことはない。更には、この樹脂フィルムは繰り返しの接着が可能であって、静電チャック2と基盤1とを容易に分離することができるため、メンテナンスの点でも有利である。 Further, when the electrostatic chuck 2 is bonded to the base body 1a, a 50 μm thick silicone resin film (manufactured by Fuso Rubber Industrial Co., Ltd .: trade name Sirius) may be used instead of the silicone adhesive. Since this resin film has fine protrusions formed on the surface and exhibits an adhesive force due to a very weak intermolecular force, the electrostatic chuck 2 can be adhered to the substrate body 1a, and an EUV exposure machine or the like. Thus, even if the electrostatic chuck device is used and exposed to a high temperature, only the electrostatic chuck 2 is not expanded and the base 1 is not distorted. Furthermore, since this resin film can be repeatedly bonded and the electrostatic chuck 2 and the substrate 1 can be easily separated, it is advantageous in terms of maintenance.

[第二の実施形態]
 図5は、第一の実施形態における静電チャック装置の変形例を示すものであり、静電チャック2が、ワークを吸着するワーク吸着電極3のほか、基盤1を吸着するための基盤吸着電極8を内部に備えている。この静電チャック2を得るにあたり、厚さ50μmのポリイミドフィルムからなる絶縁シート部材4の片面側に厚さ10μmの銅箔3を備えたものを用いて、ワーク吸着電極3を形成するまでは第一の実施形態と同様である。本実施例では、更に、厚さ50μmのポリイミドフィルムからなる絶縁シート部材5の片面側に厚さ10μmの銅箔8を備えたものを用意し、この銅箔8に対して、マスクを介してエッチング処理を行い、ワーク吸着電極3の場合と同じように基盤1の突起部1bの位置と形状とに対応させて、開口径d=2mmの開口部を形成すると共に、櫛歯状の電極部8a及び8bが互い違いに組み込まれた双極型の基盤吸着電極8を形成した。その際、電極部8a及び8bの幅はそれぞれ0.7mmとし、また、電極部8a及び8bの電極間距離は0.7mmとなるようにした。なお、この基盤吸着電極8は、ワーク吸着電極3とは別の直流電源(図示外)に接続できるようにした。
[Second Embodiment]
FIG. 5 shows a modification of the electrostatic chuck device according to the first embodiment, in which the electrostatic chuck 2 attracts the substrate 1 in addition to the workpiece attracting electrode 3 that attracts the workpiece. 8 is provided inside. In obtaining this electrostatic chuck 2, until the work attracting electrode 3 is formed by using an insulating sheet member 4 made of a polyimide film having a thickness of 50 μm and having a copper foil 3 having a thickness of 10 μm on one side. It is the same as that of one embodiment. In the present embodiment, the insulating sheet member 5 made of a polyimide film having a thickness of 50 μm is provided with a copper foil 8 having a thickness of 10 μm on one side, and the copper foil 8 is interposed through a mask. Etching is performed to form an opening with an opening diameter d 1 = 2 mm corresponding to the position and shape of the protrusion 1b of the substrate 1 in the same manner as in the case of the workpiece adsorption electrode 3, and a comb-like electrode Bipolar substrate adsorption electrodes 8 in which the portions 8a and 8b were alternately incorporated were formed. At that time, the width of the electrode portions 8a and 8b was set to 0.7 mm, respectively, and the distance between the electrodes of the electrode portions 8a and 8b was set to 0.7 mm. The substrate suction electrode 8 can be connected to a DC power source (not shown) different from the workpiece suction electrode 3.

 次に、ワーク吸着電極3と基盤吸着電極8に対してそれぞれシリコーン製の接着剤6を塗布し、各開口部及び電極間の隙間に接着剤6が充填されるようにして、厚さ125μmのポリイミドフィルムからなる中間絶縁シート部材9を介在させて、絶縁シート部材4と絶縁シート部材5とを重ねてプレス加工した。次いで、第一の実施形態の場合と同様にして、開口径d=1.1mmの貫通孔7を形成して、静電チャック2を得た。 Next, a silicone adhesive 6 is applied to each of the workpiece adsorption electrode 3 and the substrate adsorption electrode 8 so that the adhesive 6 is filled in the openings and the gaps between the electrodes. The insulating sheet member 4 and the insulating sheet member 5 were stacked and pressed by interposing an intermediate insulating sheet member 9 made of a polyimide film. Next, in the same manner as in the first embodiment, a through hole 7 having an opening diameter d 2 = 1.1 mm was formed, and the electrostatic chuck 2 was obtained.

 そして、突起部1bの高さを調整した以外は第一の実施形態と同じ基盤1に対して、静電チャック2の貫通孔7に突起部1bを挿通させるようにして重ね合わせて、突起部の突出高h=10μm、ワーク吸着電極3から突起部1aの頂面まで高さh=60μmの静電チャック装置を得た。この静電チャック装置は、基盤吸着電極8に電圧を印加することで基盤上に静電チャック2が保持され、他方、ワーク吸着電極3に電圧を印加することで半導体ウエハやガラス基板等のワークを吸着することができる。そのため、静電チャック装置が高温下に晒されても、静電チャック2のみが膨張して基盤1に歪みを与えるようなことはなく、静電チャック2と基盤1との分離が容易であることから、メンテナンスの点でも有利である。 Then, the protrusion 1b is superposed on the same base 1 as in the first embodiment except that the height of the protrusion 1b is adjusted so that the protrusion 1b is inserted through the through hole 7 of the electrostatic chuck 2. Thus, an electrostatic chuck device having a height h 1 = 10 μm and a height h 2 = 60 μm from the workpiece attracting electrode 3 to the top surface of the protrusion 1a was obtained. In this electrostatic chuck device, the electrostatic chuck 2 is held on the substrate by applying a voltage to the substrate attracting electrode 8, and on the other hand, a workpiece such as a semiconductor wafer or a glass substrate is applied by applying a voltage to the workpiece attracting electrode 3. Can be adsorbed. Therefore, even when the electrostatic chuck device is exposed to a high temperature, only the electrostatic chuck 2 does not expand and does not distort the substrate 1, and the electrostatic chuck 2 and the substrate 1 can be easily separated. Therefore, it is advantageous also in terms of maintenance.

1:基盤
1a:基盤本体
1b:突起部
2:静電チャック
3:吸着電極
3a:第一吸着電極
3b:第二吸着電極
3c:開口部
4:絶縁シート部材
5:絶縁シート部材
6:接着剤(絶縁部材)
7:貫通孔
8:基盤吸着電極
8a:第一吸着電極
8b:第二吸着電極
1: Base
1a: Main body
1b: Protrusion part 2: Electrostatic chuck 3: Adsorption electrode
3a: First adsorption electrode
3b: Second adsorption electrode
3c: Opening part 4: Insulating sheet member 5: Insulating sheet member 6: Adhesive (insulating member)
7: Through hole 8: Substrate adsorption electrode
8a: First adsorption electrode
8b: Second adsorption electrode

Claims (13)

 ワークを吸着するためのワーク吸着電極を内部に有した静電チャックを基盤上に備えた静電チャック装置であって、
 基盤は、静電チャックを貫通して静電チャックの表面に突出する複数の突起部を有して、該突起部の頂面によってエンボス状のワーク吸着面を形成し、また、突起部の外周面と静電チャックのワーク吸着電極との間には、絶縁部材が介在することを特徴とする静電チャック装置。
An electrostatic chuck device having an electrostatic chuck having a workpiece chucking electrode inside for chucking a workpiece on a substrate,
The base has a plurality of protrusions that penetrate the electrostatic chuck and protrude from the surface of the electrostatic chuck, and an embossed workpiece suction surface is formed by the top surface of the protrusion. An electrostatic chuck device, wherein an insulating member is interposed between the surface and the workpiece chucking electrode of the electrostatic chuck.
 ワーク吸着電極の表面から突起部の頂面までの高さで表される距離が、50μm以上300μm以下である請求項1に記載の静電チャック装置。 2. The electrostatic chuck device according to claim 1, wherein a distance represented by a height from the surface of the workpiece attracting electrode to the top surface of the protrusion is 50 μm or more and 300 μm or less.  基盤は、熱膨張率が1ppm以下の低熱膨張材からなる請求項1又は2に記載の静電チャック装置。 The electrostatic chuck device according to claim 1, wherein the base is made of a low thermal expansion material having a coefficient of thermal expansion of 1 ppm or less.  静電チャックが、双極型のワーク吸着電極を有したものである請求項1~3のいずれかに記載の静電チャック装置。 The electrostatic chuck device according to any one of claims 1 to 3, wherein the electrostatic chuck has a bipolar work suction electrode.  静電チャックが、基盤を吸着するための基盤吸着電極を内部に有して、基盤の突起部の外周面と基盤吸着電極との間には、絶縁部材が介在する請求項1~4のいずれかに記載の静電チャック装置。 5. The electrostatic chuck includes a substrate adsorption electrode for adsorbing the substrate inside, and an insulating member is interposed between the outer peripheral surface of the protrusion of the substrate and the substrate adsorption electrode. An electrostatic chuck apparatus according to claim 1.  ファンデルワールス力を発現する樹脂フィルムを介して、静電チャックと基盤とが接着される請求項1~4のいずれかに記載の静電チャック装置。 The electrostatic chuck device according to any one of claims 1 to 4, wherein the electrostatic chuck and the substrate are bonded via a resin film that exhibits van der Waals force.  2つの絶縁シート部材の間にワークを吸着するためのワーク吸着電極を有した静電チャックを基盤上に備えた静電チャック装置を製造する方法であって、
 表面に複数の突起部を有した基盤と、該突起部に対応する位置にワーク吸着電極が開口部を有して、該開口部が絶縁性の接着剤で充填された静電チャックとを用いて、
 先ず、ワーク吸着電極の開口部を通って静電チャックの表裏面間を貫通するように、開口部より小さい大きさの貫通孔を静電チャックに形成し、
 次いで、前記貫通孔に基盤の突起部を挿通させるようにして静電チャックを基盤に重ね合わせて、静電チャックの表面に突出した突起部の頂面によってエンボス状のワーク吸着面を形成することを特徴とする静電チャック装置の製造方法。
A method of manufacturing an electrostatic chuck device comprising an electrostatic chuck having a workpiece chucking electrode for chucking a workpiece between two insulating sheet members on a substrate,
Using a substrate having a plurality of protrusions on the surface, and an electrostatic chuck in which a work adsorption electrode has an opening at a position corresponding to the protrusion, and the opening is filled with an insulating adhesive And
First, a through-hole having a size smaller than the opening is formed in the electrostatic chuck so as to penetrate between the front and back surfaces of the electrostatic chuck through the opening of the work attracting electrode.
Next, the embossed workpiece attracting surface is formed by the top surface of the projecting portion protruding on the surface of the electrostatic chuck by superimposing the electrostatic chuck on the substrate so that the projecting portion of the substrate is inserted into the through hole. A method of manufacturing an electrostatic chuck device characterized by the above.
 一方の絶縁シート部材に開口部を有したワーク吸着電極を形成し、次いで、少なくとも該開口部が絶縁性の接着剤で充填されるようにして、他方の絶縁シート部材を貼り合せて静電チャックを得る請求項7に記載の静電チャック装置の製造方法。 An electrostatic chuck is formed by forming a work adsorption electrode having an opening in one insulating sheet member, and then bonding the other insulating sheet member so that at least the opening is filled with an insulating adhesive. The manufacturing method of the electrostatic chuck apparatus of Claim 7 which obtains.  ワーク吸着電極の表面から突起部の頂面までの高さで表される距離が、50μm以上300μm以下である請求項7又は8に記載の静電チャック装置の製造方法。 The method for manufacturing an electrostatic chuck device according to claim 7 or 8, wherein a distance represented by a height from a surface of the workpiece attracting electrode to a top surface of the protrusion is not less than 50 µm and not more than 300 µm.  基盤は、熱膨張率が1ppm以下の低熱膨張材からなる請求項7~9のいずれかに記載の静電チャック装置の製造方法。 10. The method for manufacturing an electrostatic chuck device according to claim 7, wherein the substrate is made of a low thermal expansion material having a coefficient of thermal expansion of 1 ppm or less.  静電チャックが、双極型のワーク吸着電極を備えたものである請求項7~10のいずれかに記載の静電チャック装置の製造方法。 The method for manufacturing an electrostatic chuck device according to any one of claims 7 to 10, wherein the electrostatic chuck is provided with a bipolar work attracting electrode.  2つの絶縁シート部材の間にワークを吸着するためのワーク吸着電極と基盤を吸着するための基盤吸着電極とを有して、ワーク吸着電極と基盤吸着電極との間に中間絶縁シート部材が介在された静電チャックであって、前記ワーク吸着電極及び基盤吸着電極には、基盤の突起部に対応する位置にそれぞれ開口部を有して、これらの開口部が絶縁性の接着剤で充填されたものを用いる請求項7~11のいずれかに記載の静電チャック装置の製造方法。 It has a work adsorption electrode for adsorbing a workpiece between two insulating sheet members and a substrate adsorption electrode for adsorbing the substrate, and an intermediate insulation sheet member is interposed between the workpiece adsorption electrode and the substrate adsorption electrode The workpiece chucking electrode and the substrate chucking electrode have openings at positions corresponding to the protrusions of the substrate, respectively, and these openings are filled with an insulating adhesive. The method of manufacturing an electrostatic chuck device according to any one of claims 7 to 11, wherein an adhesive is used.  ファンデルワールス力を発現する樹脂フィルムを介して、静電チャックと基盤とが接着される請求項7~11のいずれかに記載の静電チャック装置の製造方法。 The method of manufacturing an electrostatic chuck device according to any one of claims 7 to 11, wherein the electrostatic chuck and the substrate are bonded via a resin film that expresses van der Waals force.
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