TWI467691B - Electrostatic chuck and its manufacturing method - Google Patents
Electrostatic chuck and its manufacturing method Download PDFInfo
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- TWI467691B TWI467691B TW98134496A TW98134496A TWI467691B TW I467691 B TWI467691 B TW I467691B TW 98134496 A TW98134496 A TW 98134496A TW 98134496 A TW98134496 A TW 98134496A TW I467691 B TWI467691 B TW I467691B
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- H10P72/72—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- H10P72/70—
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- H10P72/722—
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- H10P72/7614—
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- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本發明係關於在製造液晶面板時所使用的基板貼合裝置或離子摻雜裝置等所具備，使用在吸附/保持玻璃基板，此外，在半導體元件製造製程中所使用的蝕刻處理、藉由化學氣相沈積(CVD)之薄膜形成等的電漿處理裝置、電子曝光裝置、離子描繪裝置、離子注入裝置等所具備，使用在吸附/保持半導體晶圓的靜電吸盤。The present invention relates to a substrate bonding apparatus or an ion doping apparatus used in the production of a liquid crystal panel, and is used in an adsorption/holding glass substrate, and in addition, an etching treatment used in a semiconductor device manufacturing process, by chemistry A plasma processing apparatus such as a film forming method for vapor deposition (CVD), an electron exposure apparatus, an ion drawing apparatus, an ion implantation apparatus, or the like is provided, and an electrostatic chuck for adsorbing/holding a semiconductor wafer is used.
靜電吸盤係具有在如上所述之各種半導體製造裝置或液晶面板製造裝置等之處理室內，使矽晶圓或玻璃基板等作靜電性吸附而保持的功能。在該靜電吸盤中，由於將基板作接觸保持，因此附著在靜電吸盤之基板吸附面的微粒等污染物會附著在半導體晶圓或玻璃基板，而會有在後工程之半導體製造製程中發生問題之虞。附著在基板等的污染物係使作為最終製品之半導體元件等的良率明顯降低，此外，亦會有使得在各工程中所使用的製造裝置二次污染的情形，且亦會引起使工廠生產線全體的裝置污染的情形。因此，對於污染物附著之問題的處理對策之一，在於管理晶圓或玻璃基板等之背面的微粒。The electrostatic chuck has a function of electrostatically adsorbing and holding a tantalum wafer or a glass substrate in a processing chamber such as various semiconductor manufacturing apparatuses or liquid crystal panel manufacturing apparatuses as described above. In the electrostatic chuck, since the substrate is held in contact with each other, contaminants such as particles adhering to the adsorption surface of the substrate of the electrostatic chuck adhere to the semiconductor wafer or the glass substrate, and there is a problem in the post-engineering semiconductor manufacturing process. After that. Contaminants adhering to a substrate or the like significantly reduce the yield of a semiconductor element or the like as a final product, and also cause secondary contamination of a manufacturing apparatus used in each project, and also cause a factory production line. The situation in which all the devices are contaminated. Therefore, one of the countermeasures against the problem of adhesion of contaminants is to manage fine particles on the back surface of a wafer or a glass substrate.
被稱為International Technology Roadmap For Semiconductors(以下稱為ITRS)之有關半導體元件製造的國際機關作成針對成為如前所述之污染要因的晶圓背面的微粒的目標指針，且在網際網路的網頁中公開內容(http://www.itrs.net/)。在2007年版的ITRS中，在前端(front end)製程的曝光裝置或計測裝置以外的裝置、亦即離子注入裝置等中，晶圓背面的微粒指針至2012年為止，以Φ 300mm晶圓尺寸，直徑0.16μm，被設為200個。因此，在靜電吸盤中，必須儘量避免如上所示之微粒在所吸附保持的晶圓背面移動且附著。An international organization known as International Technology Roadmap For Semiconductors (hereinafter referred to as ITRS) for the manufacture of semiconductor components has created a target pointer for particles on the back side of the wafer that is the cause of contamination as described above, and is in the web page of the Internet. Public content (http://www.itrs.net/). In the 2007 edition of the ITRS, in the apparatus other than the exposure apparatus or the measurement apparatus of the front end process, that is, the ion implantation apparatus, etc., the particle pointer on the back surface of the wafer is Φ 300 mm wafer size up to 2012. The diameter is 0.16 μm and is set to 200. Therefore, in the electrostatic chuck, it is necessary to prevent the particles as shown above from moving and adhering to the back surface of the wafer which is adsorbed and held.
靜電吸盤中之上述問題的解決對策之一係儘可能減小其基板吸附面與晶圓或玻璃基板背面的接觸面積。尤其其效果顯著呈現的是在基板吸附面由陶瓷製者所構成的情形下。亦即，陶瓷基本上呈多孔狀，在製造過程中所殘留的微小陶瓷粉或其他係在內部被捕捉。因此，在以靜電吸盤吸附/保持半導體晶圓或玻璃基板等基板的過程中，該等在基板吸附面析出的可能性高。因此，例如日本特開2006-49357號公報所示，為了減小基板吸附面與基板背面的接觸面積，將靜電吸盤的基板吸附面形成為浮凸(emboss)構造，亦即在基板吸附面形成複數個被稱為銷的凸部，進行僅使該凸部的平坦頂面與基板相接觸而予以吸附。此外，在日本特開2006-237023號公報中係已提出將形成基板吸附面的陶瓷的銷與基板的接觸面積設為基板面積的10%以下，並且將銷的平均高度設為5μm以上、30μm以下，而且將銷的高度的標準偏差設為1.8μm以下。One of the solutions to the above problems in the electrostatic chuck is to minimize the contact area between the substrate adsorption surface and the back surface of the wafer or glass substrate. In particular, the effect is remarkably exhibited in the case where the substrate adsorption surface is composed of a ceramic manufacturer. That is, the ceramic is substantially porous, and the minute ceramic powder or other lines remaining in the manufacturing process are trapped inside. Therefore, in the process of adsorbing/holding a substrate such as a semiconductor wafer or a glass substrate with an electrostatic chuck, the possibility of depositing on the substrate adsorption surface is high. Therefore, as shown in Japanese Laid-Open Patent Publication No. 2006-49357, in order to reduce the contact area between the substrate adsorption surface and the back surface of the substrate, the substrate adsorption surface of the electrostatic chuck is formed into an emboss structure, that is, formed on the substrate adsorption surface. A plurality of convex portions called pins are adsorbed only by bringing the flat top surface of the convex portion into contact with the substrate. In the Japanese Patent Publication No. 2006-237023, it is proposed that the contact area between the pin of the ceramic forming the substrate adsorption surface and the substrate is 10% or less of the substrate area, and the average height of the pin is set to 5 μm or more and 30 μm. Hereinafter, the standard deviation of the height of the pin is set to 1.8 μm or less.
但是，該等技術均為利用陶瓷等較具硬度的材料來形成基板吸附面者，在具備有由橡膠或樹脂等彈性材料所構成之基板吸附面的靜電吸盤中，假設仿效該等而形成凸部，亦因在使半導體晶圓或玻璃基板等基板吸附在靜電吸盤時的力，而使該凸部收縮，因此會有無法如預期使得與基板的接觸面積降低的情形。此外，即使透過具備有流通冷媒之流路等之冷卻手段的靜電吸盤，而欲使所吸附/保持的基板冷卻，亦會有無法充分獲得其效果之虞。However, these technologies are all formed by using a relatively hard material such as ceramics to form a substrate adsorption surface. In an electrostatic chuck having a substrate adsorption surface made of an elastic material such as rubber or resin, it is assumed that the surface is formed to be convex. In addition, when the substrate such as a semiconductor wafer or a glass substrate is attracted to the electrostatic chuck, the convex portion is shrunk, and thus the contact area with the substrate may not be lowered as expected. In addition, even if an electrostatic chuck having a cooling means such as a flow path through which a refrigerant flows is used to cool the substrate to be adsorbed/held, the effect may not be sufficiently obtained.
但是，在日本特開2001-60618號公報中已記載在形成於基板吸附面的凸部安裝合成橡膠製的吸收構件，但是該文獻係關於利用吸收構件局部吸收基板所具有之基板背面的粗糙度，來保持所吸附、保持的基板的平坦度，俾使因曝光裝置所造成之焦點偏移情形消失的技術(參照段落0036、段落0049等)，與考慮到在凸部頂面之與基板的接觸面積的技術相差甚遠。此外，在日本特開平10-335439號公報中係記載一種具備有形成有粒化(凹凸)模樣的矽氧橡膠製的基板吸附面，與晶圓的接觸面積成為晶圓面積之20～90%的靜電吸盤，雖然舉出矽氧橡膠的硬度(JIS-A)為85以下(參照段落0008、0009)，但在該文獻中並非為考慮到吸附/保持有基板的狀態者。However, Japanese Laid-Open Patent Publication No. 2001-60618 discloses that an absorbent member made of a synthetic rubber is attached to a convex portion formed on a substrate adsorption surface. However, this document relates to the roughness of the back surface of the substrate which is partially absorbed by the substrate by the absorption member. To maintain the flatness of the substrate to be adsorbed and held, and to eliminate the focus shift caused by the exposure device (refer to paragraph 0036, paragraph 0049, etc.), and to consider the substrate on the top surface of the convex portion. The technology of contact area is quite different. Further, Japanese Laid-Open Patent Publication No. Hei 10-335439 discloses a substrate adsorption surface made of a silicone rubber having a granulated (concave-convex) pattern, and the contact area with the wafer is 20 to 90% of the wafer area. In the electrostatic chuck, the hardness (JIS-A) of the silicone rubber is 85 or less (refer to paragraphs 0008 and 0009), but in this document, the state in which the substrate is adsorbed/held is not considered.
[專利文獻1]日本特開2006-49357號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-49357
[專利文獻2]日本特開2006-237023號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2006-237023
[專利文獻3]日本特開2001-60618號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2001-60618
[專利文獻4]日本特開平10-335439號公報[Patent Document 4] Japanese Patent Laid-Open No. Hei 10-335439
根據如上所示之狀況，本發明人等針對在具備有由橡膠或樹脂等彈性材料所構成的基板吸附面的靜電吸盤中，可有效減少附著在基板之微粒等污染物，並且使得對於透過靜電吸盤所吸附/保持之基板的冷卻效果最有效率地呈現的手段精心研究的結果，發現藉由將在吸附力作用的狀態下的凸部形狀等最適化，可同時解決該等課題，進而完成本發明。According to the above-described situation, the inventors of the present invention can effectively reduce contaminants such as particles adhering to the substrate in the electrostatic chuck provided with the substrate adsorption surface made of an elastic material such as rubber or resin, and make it possible to transmit static electricity. As a result of careful study of the cooling effect of the substrate adsorbed/held by the suction cup, it has been found that the shape of the convex portion in the state in which the adsorption force acts can be optimized, and the problems can be simultaneously solved. this invention.
因此，本發明係提供一種可減少污染物由基板吸附面附著在基板，同時可一面將基板接觸面積保持為最適，一面有效地進行介由靜電吸盤之冷卻的靜電吸盤。Accordingly, the present invention provides an electrostatic chuck which can reduce the adhesion of contaminants from the substrate adsorption surface to the substrate while maintaining the optimum contact area of the substrate while cooling the electrostatic chuck.
亦即，本發明係一種靜電吸盤，係將具備有由彈性材料所構成之複數凸部的彈性吸附層作為基板吸附面，隔著該彈性吸附層來吸附/保持基板的靜電吸盤，其特徵為：將彈性吸附層中之凸部的高度設為h、基板吸附面中之平均單位面積的凸部數設為n、凸部中之頂面的面積設為A、形成凸部之彈性材料的彈性係數設為E，當以吸附力F吸附/保持全體平坦度為Wh 的基板時，凸部以吸附力F所作用的方向進行收縮的量δ滿足以下關係式(1)，而且基板吸附面中之平均單位面積的凸部頂面的總面積的比例ξ為10%以上：That is, the present invention relates to an electrostatic chuck which is characterized in that an elastic adsorption layer having a plurality of convex portions composed of an elastic material is used as a substrate adsorption surface, and an electrostatic chuck of the substrate is adsorbed/held by the elastic adsorption layer. : the height of the convex portion in the elastic adsorption layer is h, the number of convex portions per unit area of the substrate adsorption surface is n, the area of the top surface of the convex portion is A, and the elastic material forming the convex portion is formed. When the elastic modulus is E, when the substrate having the entire flatness of W h is adsorbed/held by the adsorption force F, the amount δ of the convex portion contracted in the direction in which the adsorption force F acts satisfies the following relation (1), and the substrate is adsorbed. The ratio of the total area of the top surface of the convex portion of the average unit area in the surface is 1010% or more:
5Wh ≧δ≧0.5Wh ,在此δ=(h/nA)‧(F/E)……(1)5W h ≧δ≧0.5W h , where δ=(h/nA)‧(F/E)......(1)
[其中，各值的單位係分別表示在括弧內；Wh (m)、h(m)、n(個/m2 )、A(m2 )、E(Pa)、F(Pa)、δ(m)]。[wherein, the unit of each value is represented in parentheses; W h (m), h (m), n (pieces / m 2 ), A (m 2 ), E (Pa), F (Pa), δ (m)].
此外，本發明係一種靜電吸盤之製造方法，係製造上述靜電吸盤的方法，其特徵為：將具備有由彈性材料所構成的彈性層、上部絕緣層、形成內部電極的電極層、及下部絕緣層的靜電吸盤薄片收容在真空吸盤裝置，在靜電吸盤薄片的彈性層側介在有預定的圖案遮罩而進行真空吸引，藉此形成與圖案遮罩相對應的凸部而得彈性吸附層。Further, the present invention relates to a method of manufacturing an electrostatic chuck, which is characterized in that an electrostatic layer composed of an elastic material, an upper insulating layer, an electrode layer forming an internal electrode, and a lower portion are provided. The electrostatic chuck sheet of the layer is housed in a vacuum chuck device, and a predetermined pattern mask is placed on the elastic layer side of the electrostatic chuck sheet to perform vacuum suction, whereby a convex portion corresponding to the pattern mask is formed to obtain an elastic adsorption layer.
本發明之靜電吸盤，在以吸附力F吸附/保持基板的狀態下，凸部以吸附力F所作用的方向進行收縮的量δ係基板全體平坦度Wh 的0.5倍以上，而且為全體平坦度Wh 的5倍以下，較佳為δ與Wh 的關係滿足以下所示之關係式(2)。In the electrostatic chuck of the present invention, in the state in which the substrate is adsorbed and held by the adsorption force F, the convex portion is shrunk in the direction in which the adsorption force F acts, and the amount of the δ-based substrate is 0.5 times or more of the total flatness W h , and is flat. W h of 5 times or less, preferably with the relationship δ W h satisfies the relationship of formula (2) of the following.
2Wh ≧δ≧1Wh ,在此δ=(h/nA)‧(F/E)……(2)2W h ≧δ≧1W h , where δ=(h/nA)‧(F/E)......(2)
[各值的單位係與關係式(1)相同]。[The unit of each value is the same as relational expression (1)].
當凸部以吸附力F所作用的方向進行收縮的量δ小於所吸附基板的全體平坦度Wh 的0.5倍時，與凸部頂面所載置的基板背面相接觸的機率變小，相反地若大於5倍時，所需吸附力會變得過高，並不實際。若收縮量δ滿足關係式(2)，可期待所有凸部的頂面遍及基板全面而相接觸，而不會有因靜電吸盤所造成之基板冷卻能力降低的情形。When the amount δ of shrinkage of the convex portion in the direction in which the adsorption force F acts is less than 0.5 times the total flatness W h of the substrate to be adsorbed, the probability of contact with the back surface of the substrate placed on the top surface of the convex portion becomes small, and conversely If the ground is more than 5 times, the required adsorption force will become too high, which is not practical. If the contraction amount δ satisfies the relationship (2), it is expected that the top surfaces of all the convex portions are in contact with each other over the entire substrate, and there is no possibility that the cooling ability of the substrate due to the electrostatic chuck is lowered.
在本發明中，在使基板吸附/保持在彈性吸附層時，彈性吸附層所具備的凸部與基板的接觸狀態被最適化。在此，所謂吸附時的接觸狀態係指被吸附/保持在靜電吸盤的基板背面在凸部頂面相接觸的比例。若凸部以柔軟的彈性材質所形成，由於凸部係按照吸附力而進行收縮，因此考慮藉由選擇適當凸部的尺寸與配置，而以更多的面積相接觸。所謂接觸狀態的最適化係指所吸附的力、形成凸部的材料的柔軟度(亦即彈性係數)、凸部的高度、凸部頂面的面積、及前述接觸面積的關係。In the present invention, when the substrate is adsorbed and held by the elastic adsorption layer, the contact state of the convex portion provided in the elastic adsorption layer with the substrate is optimized. Here, the contact state at the time of adsorption means a ratio at which the back surface of the substrate which is adsorbed/held on the surface of the electrostatic chuck is in contact with the top surface of the convex portion. When the convex portion is formed of a soft elastic material, since the convex portion is contracted according to the adsorption force, it is considered that the contact is made with a larger area by selecting the size and arrangement of the appropriate convex portion. The optimization of the contact state refers to the relationship between the force to be adsorbed, the softness of the material forming the convex portion (that is, the elastic modulus), the height of the convex portion, the area of the top surface of the convex portion, and the contact area.
關於彈性吸附層中之凸部的高度h，較佳為1μm以上、1000μm以下。若凸部的高度h未達1μm，如後所述，會小於半導體製造時所使用的一般矽晶圓所具有的撓曲或翹曲的值，而會有無法達成作為凸部之作用之虞，相反地，若凸部的高度h大於1000μm，彈性吸附層中的熱阻抗變得過大，而會有基板的冷卻變得不充分之虞。The height h of the convex portion in the elastic adsorption layer is preferably 1 μm or more and 1000 μm or less. If the height h of the convex portion is less than 1 μm, as will be described later, it will be smaller than the value of the deflection or warpage of the general germanium wafer used in semiconductor manufacturing, and the effect as a convex portion may not be achieved. On the contrary, if the height h of the convex portion is larger than 1000 μm, the thermal resistance in the elastic adsorption layer becomes excessively large, and the cooling of the substrate may become insufficient.
此外，關於形成凸部之彈性材料的彈性係數E，較佳為0.1MPa以上、50MPa以下的範圍。所謂的一般橡膠的彈性係數(在此稱為楊氏係數)為1Mpa左右，相對於此，在聚醯亞胺等樹脂中，則係比橡膠高3位數左右而為1Gpa左右。因此，若為如聚醯亞胺般之較硬的樹脂，會有凸部的收縮量δ(m)變得過小之虞，在本發明中，為了滿足如上所述之彈性係數E，由橡膠等彈性材料來形成彈性吸附層。Further, the elastic modulus E of the elastic material forming the convex portion is preferably in the range of 0.1 MPa or more and 50 MPa or less. The elastic modulus of the general rubber (herein referred to as the Young's modulus) is about 1 MPa. In contrast, in a resin such as polyimide, it is about 3 GPa higher than rubber and is about 1 GPa. Therefore, in the case of a resin which is harder than a polyimide, the amount of shrinkage δ(m) of the convex portion becomes too small, and in the present invention, in order to satisfy the elastic coefficient E as described above, rubber is used. An elastic material is formed to form an elastic adsorption layer.
關於形成凸部的彈性材料，具體而言，為選自矽氧橡膠、丙烯酸系橡膠、腈橡膠、異戊二烯橡膠、胺酯橡膠、乙烯-丙烯橡膠、環氧氯丙烷橡膠、氯丁二烯橡膠、苯乙烯丁二烯橡膠、丁二烯橡膠、氟橡膠、及丁基橡膠之中至少一者所構成即可。其中，為了儘量減少對於吸附/保持在靜電吸盤的基板的污染的影響，以包含與一般所使用的矽晶圓為相同材質的矽氧橡膠較為適合。此外，化學性較為安定的氟橡膠亦較為理想。The elastic material forming the convex portion is specifically selected from the group consisting of neodymium rubber, acrylic rubber, nitrile rubber, isoprene rubber, amine ester rubber, ethylene-propylene rubber, epichlorohydrin rubber, and chloroprene. Any one of olefin rubber, styrene butadiene rubber, butadiene rubber, fluororubber, and butyl rubber may be used. Among them, in order to minimize the influence on the contamination of the substrate adsorbed/held on the electrostatic chuck, a silicone rubber containing the same material as that of the germanium wafer generally used is suitable. In addition, chemically stable fluororubbers are also preferred.
關於彈性吸附層中之凸部的具體平面形狀，並未特別有所限制，亦可形成為例如圓形或橢圓形、三角以上的多角形。此外，該凸部的平面形狀所具有的最大尺寸係以基板吸附面之最大尺寸的10分之1以下、500分之1以上為宜。較佳為基板吸附面之最大尺寸的100分之1以上、10分之1以下。例如，在吸附/保持直徑300mm的晶圓時，若將凸部的平面形狀形成為圓形，凸部的頂面最好形成為直徑3mm以上、30mm以下的圓形。若凸部的平面形狀的最大尺寸未達基板吸附面之最大尺寸的500分之1，尤其在形成凸部的材料的彈性係數較小時，其加工變得較難進行，難以遍及全部來保證凸部的形狀加工。此外，若凸部的平面形狀大於基板吸附面之最大尺寸的10分之1，結果彼此相鄰的凸部的間隔會變得過大，在凸部之間的間隙部分，基板的冷卻並不充分，而會有基板的冷卻變得不均一之虞。The specific planar shape of the convex portion in the elastic adsorption layer is not particularly limited, and may be formed into a polygonal shape such as a circular shape or an elliptical shape or a triangular shape. Further, the maximum size of the planar shape of the convex portion is preferably 1/10 or less and 500 or more of the maximum size of the substrate adsorption surface. It is preferably 1/100 or more and 1/10 or less of the maximum size of the substrate adsorption surface. For example, when a wafer having a diameter of 300 mm is adsorbed/held, if the planar shape of the convex portion is formed into a circular shape, the top surface of the convex portion is preferably formed into a circular shape having a diameter of 3 mm or more and 30 mm or less. If the maximum dimension of the planar shape of the convex portion is less than 1/500 of the maximum dimension of the substrate adsorption surface, especially when the elastic modulus of the material forming the convex portion is small, the processing becomes difficult, and it is difficult to ensure that it is all over. The shape of the convex part is processed. Further, if the planar shape of the convex portion is larger than 1/10 of the maximum size of the adsorption surface of the substrate, the interval between the convex portions adjacent to each other becomes too large, and the cooling of the substrate is insufficient in the gap portion between the convex portions. However, the cooling of the substrate becomes uneven.
此外，凸部中之頂面的面積A、與基板吸附面中之平均單位面積的凸部數n的積係成為理論上的接觸總面積nA(m2 )。在本發明中，按照所吸附/保持的基板的種類，以該總面積nA(m2 )為指標，可形成彈性吸附層中的凸部，由有效進行基板冷卻的觀點來看，基板吸附面中之平均單位面積的凸部頂面的總面積比例ξ(亦即凸部頂面對基板吸附面之總面積的比例)為10%以上，較佳為15%以上，更佳為20～50%的範圍。此外，若說明δ=(h/nA)‧(F/E)的關係式，本式的右括弧(F/E)係靜電吸盤的吸附力F與凸部的樹脂材料的彈性係數E的比。吸附力F係表示基板吸附面中之平均單位面積的吸附力，一般而言，若為一般的靜電吸盤，F與E相比為小2位數以上的值，例如，相對於一般的吸附力F=4900Pa，若為橡膠等彈性體，即為E=1Mpa，成為F/E=4.9×10-3 。另一方面，左括弧內的(h/nA)係表示相對於凸部高度的凸部的nA，亦即接觸總面積的比。因此，對於所假想的吸附力F與凸部的材質的彈性係數E，選擇在製作上所容許的適當的(h/nA)，最後以滿足關係式5Wh ≧δ≧0.5Wh 的方式進行設計。Further, the product of the area A of the top surface in the convex portion and the number n of the convex portions of the average unit area in the substrate adsorption surface becomes the theoretical total contact area nA (m 2 ). In the present invention, the convex portion in the elastic adsorption layer can be formed by using the total area nA (m 2 ) as an index according to the type of the substrate to be adsorbed/held, and the substrate adsorption surface is obtained from the viewpoint of effective substrate cooling. The ratio of the total area of the top surface of the convex portion per unit area (that is, the ratio of the top of the convex portion to the total area of the adsorption surface of the substrate) is 10% or more, preferably 15% or more, more preferably 20 to 50. The range of %. Further, when the relational expression of δ=(h/nA)‧(F/E) is described, the ratio of the adsorption force F of the right bracket (F/E) electrostatic chuck of the present formula to the elastic modulus E of the resin material of the convex portion is described. . The adsorption force F is an adsorption force per unit area on the adsorption surface of the substrate. Generally, in the case of a general electrostatic chuck, F is a value smaller than two digits of E, for example, relative to a general adsorption force. F = 4900 Pa, and if it is an elastomer such as rubber, it is E = 1 Mpa, and it becomes F / E = 4.9 × 10 -3 . On the other hand, (h/nA) in the left parenthesis indicates the ratio of nA of the convex portion with respect to the height of the convex portion, that is, the total area of contact. Therefore, for the imaginary adsorption force F and the elastic modulus E of the material of the convex portion, an appropriate (h/nA) which is allowed in production is selected, and finally, the relationship of the relationship 5 W h ≧ δ ≧ 0.5 W h is satisfied. design.
關於具備有複數凸部的彈性吸附層，可將由彈性材料所構成的凸部形成在由其他材料所構成的基材上，亦可將凸部與基材形成為一體而由彈性材料所形成。此外，關於形成預定凸部的具體手段並未特別有所限制，可例示例如以下所示的方法。亦即，藉由在由彈性材料所構成的薄片物透過遮罩等來進行噴砂處理等，可形成具有預定平面形狀及高度h(深度)的凸部。此外，亦可將具備有由彈性材料所構成的彈性層、上部絕緣層、形成內部電極的電極層、及下部絕緣層的靜電吸盤薄片收容在真空吸盤裝置，使預定的圖案遮罩介在於靜電吸盤薄片的彈性層側而作真空吸引，藉此形成與圖案遮罩相對應的凸部。The elastic adsorption layer including the plurality of convex portions may be formed of a convex portion made of an elastic material on a base material made of another material, or may be formed of an elastic material by integrally forming the convex portion and the base material. Further, the specific means for forming the predetermined convex portion is not particularly limited, and a method as shown below can be exemplified. In other words, by performing sandblasting or the like on a sheet material made of an elastic material through a mask or the like, a convex portion having a predetermined planar shape and a height h (depth) can be formed. Further, an electrostatic chuck sheet including an elastic layer made of an elastic material, an upper insulating layer, an electrode layer forming an internal electrode, and a lower insulating layer may be housed in a vacuum chuck device so that a predetermined pattern mask is interposed between static electricity. The elastic layer side of the chuck sheet is vacuum-sucked, thereby forming a convex portion corresponding to the pattern mask.
此外，在彈性吸附層中的凸部的頂面，亦可形成梨皮紋理圖案。藉由將凸部的頂面形成為梨皮紋理狀，可沿著以基板背面的全體平坦度Wh 並無法呈現的更為微細的局部凹凸而接觸凸部的頂面。關於該梨皮紋理圖案的尺寸，最好係突出部分的大小與高度分別為1nm～100nm的範圍。Further, a pear skin texture pattern may be formed on the top surface of the convex portion in the elastic adsorption layer. By the top surface of the convex portion is formed in a satin textured, may contact the top surfaces of the convex portions finer along all local irregularities in flatness of the rear surface of the substrate W h and can not be presented. Regarding the size of the pear skin texture pattern, it is preferable that the size and height of the protruding portion are in the range of 1 nm to 100 nm, respectively.
關於本發明之靜電吸盤所吸附/保持的基板，若為例如液晶面板製造所使用的玻璃基板、或在半導體元件製造製程中所使用的矽晶圓等為一般所謂的靜電吸盤所吸附/保持的對象即可。目前已知一般所使用之直徑300mm、厚度0.8mm的矽晶圓係存在平均約10μm左右的撓曲(bow)或翹曲(warp)。近年來，在將晶圓作吸附固定時之“全體平坦度”GBIR(Global Back-Surface-Referenced Ideal Plane Range)取代“全厚度變異量”TTV(Total Thickness Variation)來使用，但是若為直徑300mm之矽晶圓的情形，該“全體平坦度”為約1μ左右。因此，關於本發明之靜電吸盤作為對象的基板的全體平坦度Wh ，係可形成為0.1μm～10μm的範圍。The substrate to be adsorbed/held by the electrostatic chuck of the present invention is, for example, a glass substrate used for the production of a liquid crystal panel, or a germanium wafer used in a semiconductor device manufacturing process, which is adsorbed/held by a so-called electrostatic chuck. The object is fine. It is known that a tantalum wafer having a diameter of 300 mm and a thickness of 0.8 mm which is generally used has a bow or warp of about 10 μm on average. In recent years, the "Global Back-Surface-Referenced Ideal Plane Range" (GBIR) is used instead of the "Total Thickness Variation" (TTV), but if it is 300 mm in diameter, it is used. In the case of a wafer, the "total flatness" is about 1 μ. Therefore, the overall flatness W h of the substrate to which the electrostatic chuck of the present invention is applied can be in the range of 0.1 μm to 10 μm.
接著，在本發明中，如上所述，以當以靜電吸盤吸附/保持如上所示之基板時的凸部的收縮量(壓縮距離)成為基板的全體平坦度Wh 的0.5倍以上的方式，來設定彈性吸附層的彈性係數、形狀、其配置。此時，關於吸附/保持基板的吸附力F，至少考慮到目前主要被使用的矽晶圓或玻璃基板等之吸附所需的吸附力，在本發明中，係形成為考慮到吸附力F以100Pa以上進行吸附/保持時者。In the present invention, as described above, the amount of contraction (compression distance) of the convex portion when the substrate is adsorbed and held by the electrostatic chuck is 0.5 times or more of the total flatness W h of the substrate. The elastic modulus, shape, and configuration of the elastic adsorption layer are set. At this time, regarding the adsorption force F of the adsorption/holding substrate, at least the adsorption force required for the adsorption of the germanium wafer or the glass substrate which is currently mainly used is considered, and in the present invention, it is formed in consideration of the adsorption force F. When the adsorption/holding is performed at 100 Pa or more.
本發明中的靜電吸盤若為可將具備有由彈性材料所構成之複數凸部的彈性吸附層作為基板吸附面，隔著該彈性吸附層來吸附/保持基板者，則關於其具體構造，並未特別有所限制，如周知的靜電吸盤般，可將所謂的具有內部電極而形成層積構造的靜電吸盤薄片，採用貼附在具備有流通冷卻媒體之流路等的金屬基盤之類的構成。接著，亦可在對上述內部電極施加電壓時，以彈性吸附層成為基板吸附面的方式，在形成靜電吸盤薄片的上部絕緣層(基板吸附面側絕緣層)之上設置彈性吸附層，或者亦可使該彈性吸附層兼作為上部絕緣層。此外，可為具有正電極及負電極作為內部電極的雙極型靜電吸盤，亦可為僅有正(負)電極作為內部電極、負(正)極側則接地的單極型。此外，關於上部絕緣層或下部絕緣層(金屬基盤側絕緣層)的材質等、或內部電極的材質、形狀等，亦未特別有所限制。In the electrostatic chuck according to the present invention, if an elastic adsorption layer including a plurality of convex portions made of an elastic material is used as a substrate adsorption surface, and the substrate is adsorbed/held by the elastic adsorption layer, the specific structure thereof is In the same manner as the known electrostatic chuck, a so-called electrostatic chuck sheet having an internal electrode and a laminated structure can be attached to a metal base having a flow path through which a cooling medium flows, and the like. . Then, when a voltage is applied to the internal electrode, an elastic adsorption layer may be provided on the upper insulating layer (substrate adsorption surface side insulating layer) on which the electrostatic chuck sheet is formed so that the elastic adsorption layer becomes the substrate adsorption surface, or The elastic adsorption layer can also serve as an upper insulating layer. Further, it may be a bipolar electrostatic chuck having a positive electrode and a negative electrode as internal electrodes, or a unipolar type in which only a positive (negative) electrode is used as an internal electrode and a negative (positive) side is grounded. Further, the material of the upper insulating layer or the lower insulating layer (metal base-side insulating layer), or the material and shape of the internal electrode are not particularly limited.
根據本發明，一面吸收半導體晶圓或玻璃基板等所不可避免具備的翹曲或撓曲，透過彈性吸附層的凸部，可在基板吸附面均一地吸附/保持該等基板，因此可有效減低微粒等污染物由基板吸附面轉移至基板背面，並且將處理中所蓄積的基板的熱以最大限度傳達至靜電吸盤，可效率佳地進行透過靜電吸盤的基板冷卻。According to the present invention, it is possible to absorb the warpage or the deflection which is inevitably provided in the semiconductor wafer or the glass substrate, and to pass through the convex portion of the elastic adsorption layer, so that the substrates can be uniformly adsorbed and held on the substrate adsorption surface, thereby effectively reducing the substrate. Contaminants such as fine particles are transferred from the substrate adsorption surface to the back surface of the substrate, and the heat of the substrate accumulated in the process is transmitted to the electrostatic chuck to the maximum extent, so that the substrate that has passed through the electrostatic chuck can be efficiently cooled.
以下一面使用圖示，一面進一步詳加說明本發明。The present invention will be further described in detail below using the drawings.
在表1中係顯示針對由在橡膠中亦較為柔軟之彈性係數1Mpa的矽氧橡膠所構成的情形(例1～3)，為工程塑膠的代表，由在靜電吸盤中亦一般被加以利用之彈性係數1Gpa的聚醯亞胺所構成的情形(例4、5)、及在橡膠中亦較為堅硬之彈性係數10Mpa的情形，分別彈性吸附層所具備的凸部的例示。此外，第1圖(a)係顯示該表1中之凸部的配置關係的平面說明圖。在該第1圖(a)中係顯示將直徑d(m)的凸部1配置在邊長為a(m)之正三角形之各頂點的態樣，以其中一個凸部1c為中心，由凸部1b依順時計方向配置有凸部1g、凸部1h、凸部1d、凸部1f、及凸部1e。該等凸部1係顯示靜電吸盤100中的一部分，在具有如上所示之關係的配置狀態下，以由凸部1形成靜電吸盤100之基板吸附面的方式在全面分布。此外，在第1圖(b)中顯示由第1圖(a)中的A-A剖面方向所觀看到的靜電吸盤100的態樣。靜電吸盤100係具有例如由鋁金屬所形成的基座(金屬基盤)5，在其上層積有下部絕緣層3與彈性吸附層2，在該等之間具備有吸附電極(內部電極)4。其中，彈性吸附層2係兼作為將吸附電極4的上面側作電性絕緣的上部絕緣層，彈性吸附層2係具備有複數個高度h(m)的凸部1，支持基板6而形成基板吸附面。此外，在該彈性吸附層2中相鄰接的凸部1之間係具有不會與基板6相接觸的上面2b。Table 1 shows the case of a silicone rubber having a modulus of elasticity of 1 MPa which is also soft in rubber (Examples 1 to 3), which is representative of engineering plastics and is generally used in electrostatic chucks. In the case where the polyimide having a modulus of elasticity of 1 Gpa is composed (Examples 4 and 5) and the elastic modulus of 10 Mpa which is also hard in rubber, the convex portions of the elastic adsorption layer are exemplified. In addition, Fig. 1(a) is a plan explanatory view showing the arrangement relationship of the convex portions in the table 1. In the first diagram (a), the convex portion 1 having the diameter d (m) is arranged at each vertex of the equilateral triangle having the side length a (m), and one of the convex portions 1c is centered. The convex portion 1b is provided with a convex portion 1g, a convex portion 1h, a convex portion 1d, a convex portion 1f, and a convex portion 1e in the clockwise direction. The convex portions 1 show a part of the electrostatic chuck 100, and are distributed in a manner of forming the substrate adsorption surface of the electrostatic chuck 100 by the convex portion 1 in the arrangement state having the relationship as described above. Further, in the first diagram (b), the aspect of the electrostatic chuck 100 viewed from the A-A cross-sectional direction in Fig. 1(a) is shown. The electrostatic chuck 100 has a susceptor (metal base) 5 made of, for example, aluminum metal, and a lower insulating layer 3 and an elastic absorbing layer 2 are laminated thereon, and an adsorption electrode (internal electrode) 4 is provided between the electrostatic chucks. The elastic adsorption layer 2 also serves as an upper insulating layer that electrically insulates the upper surface side of the adsorption electrode 4, and the elastic adsorption layer 2 includes a plurality of convex portions 1 having a height h (m), and supports the substrate 6 to form a substrate. Adsorption surface. Further, between the adjacent convex portions 1 in the elastic adsorption layer 2, an upper surface 2b which does not come into contact with the substrate 6 is provided.
在該等例中，彈性吸附層2形成直徑298mm的基板吸附面，若以吸附力F=4900Pa(≒50gf/cm2 )吸附直徑300mm、全體平坦度Wh 為1μm的矽半導體基板時，首先，在例1中係具有較大的凸部直徑d(21mm)，其高度h亦較高(60μm)，凸部1的收縮量為δ-(h/nA)‧(F/E)=1.02×10-6 (m)，可得與矽半導體基板的全體平坦度Wh (m)同等的值，而且基板吸附面中之平均單位面積的凸部頂面的總面積的比例ξ為28.7(%)，因此可極為良好地進行基板的冷卻。此外，在例2中，與例1相比，凸部的高度h低且直徑d亦小，但是藉由縮窄凸部1的間隔a，雖獲得與例1同等的收縮量δ=1.01μm，但是由於ξ=12.1%，為例1的一半，因此預測基板的冷卻能力會劣於例1。在例3中，凸部的直徑d與例2相同，為降低其高度h，而且更加減小間隔a的情形，δ係成為例2的大約一半，但是與例2相比，ξ提升約20%。另一方面，例4係將凸部的材料設為聚醯亞胺的情形，凸部的高度h、直徑d、間隔a係與例1相同，但是δ係與彈性係數呈反比變小，因此成為0.001μm左右之極小的值。因此，幾乎無法期待凸部的柔軟性。在例5中，凸部的材料與例4相同，但是δ係獲得較大的值，而ξ則極端降低而成為0.1(%)，並無法期待因與基板接觸所造成的熱傳導。此外，在例6中，係將凸部的各尺寸或配置最適化而獲得δ=0.532μm，但是ξ則限於6.4(%)。In such embodiment, the elastic adsorbing layer 2 is formed of the 298mm diameter of the substrate attracting surface, if the suction force F = 4900Pa (≒ 50gf / cm 2) adsorption diameter 300mm, W h is all flatness 1μm silicon semiconductor substrate, first In Example 1, it has a large convex diameter d (21 mm), and its height h is also high (60 μm), and the contraction amount of the convex portion 1 is δ-(h/nA)‧(F/E)=1.02 ×10 -6 (m), which is equivalent to the total flatness W h (m) of the germanium semiconductor substrate, and the ratio ξ of the total area of the convex top surface of the average unit area of the substrate adsorption surface is 28.7 ( Since %), the cooling of the substrate can be performed extremely well. Further, in Example 2, the height h of the convex portion was lower and the diameter d was smaller than that of Example 1, but by narrowing the interval a of the convex portion 1, the same amount of shrinkage δ = 1.01 μm as in Example 1 was obtained. However, since ξ = 12.1% is half of the example 1, the cooling ability of the substrate is predicted to be inferior to that of the example 1. In Example 3, the diameter d of the convex portion is the same as in Example 2, and in order to lower the height h thereof and further reduce the interval a, the δ system is about half of the example 2, but the enthalpy is raised by about 20 compared with the example 2. %. On the other hand, in the case of the case where the material of the convex portion is made of polyimide, the height h, the diameter d, and the interval a of the convex portion are the same as those of the example 1, but the δ system is inversely proportional to the elastic modulus, so It is an extremely small value of about 0.001 μm. Therefore, the flexibility of the convex portion can hardly be expected. In Example 5, the material of the convex portion was the same as that of Example 4, but the δ system obtained a large value, and the enthalpy was extremely lowered to become 0.1 (%), and heat conduction due to contact with the substrate could not be expected. Further, in Example 6, each size or arrangement of the convex portions was optimized to obtain δ = 0.532 μm, but ξ was limited to 6.4 (%).
以下根據實施例，更加具體說明本發明，惟本發明並非限定於該等內容。The present invention will be more specifically described below based on examples, but the present invention is not limited thereto.
備妥厚度100μm、300mm×300mm的薄膜矽氧薄片(SANSHIN ENTERPRISE股份有限公司製，微矽氧薄片的單面梨皮紋理類型，型號NμKSA-100-50)，切成直徑298mm的圓形，如後所述形成為彈性吸附層2。此外，使用在厚度50μm的聚醯亞胺薄片的單面層積有厚度9μm之銅箔的銅箔層積板(宇部興產股份有限公司製，銅箔層積板「UPISEL(註冊商標)N」)，在銅箔面進行掩罩(masking)，利用腐蝕性蝕刻液形成具有半月型圖案(直徑294mm的半圓狀)之雙極型(電極間隔2mm)的吸附電極4，將直徑298mm的聚醯亞胺薄片形成為下部絕緣層3。接著，如第2圖所示，在銅箔層積板的銅箔面側，隔著厚度10μm的環氧系鍵結薄片(未圖示)，以矽氧薄片的梨皮紋理面為表側的方式予以接著。經一體貼合的薄片係在內部具有直徑6mm的冷卻水水路7，對於板厚15mm、直徑298mm的鋁製基座5，隔著前述環氧系鍵結薄片予以貼著，使矽氧薄片的梨皮紋理面成為表側，亦即成為基板吸附面。Prepare a film of 100 μm, 300 mm × 300 mm thin film of silicon oxide (made by SANSHIN ENTERPRISE Co., Ltd., single-sided pear skin texture type of micro-oxygen sheet, model NμKSA-100-50), cut into a circle with a diameter of 298 mm, such as The elastic adsorption layer 2 is formed as described later. In addition, a copper foil laminated board in which a copper foil having a thickness of 9 μm is laminated on one side of a polyimine sheet having a thickness of 50 μm (made by Ube Industries, Ltd., copper foil laminated board "UPISEL (registered trademark) N) </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> The quinone imide sheet is formed as the lower insulating layer 3. Next, as shown in Fig. 2, on the copper foil surface side of the copper foil laminate, an epoxy-based bonded sheet (not shown) having a thickness of 10 μm is interposed, and the pear-skin texture surface of the tantalum oxide sheet is on the front side. The way to go on. The integrally bonded sheet has a cooling water passage 7 having a diameter of 6 mm therein, and an aluminum base 5 having a thickness of 15 mm and a diameter of 298 mm is attached to the epoxy-bonded sheet via the epoxy-bonded sheet. The texture of the pear skin becomes the front side, that is, it becomes the substrate adsorption surface.
接著，在上述微矽氧薄片的梨皮紋理面，隔著不銹鋼製的預定遮罩，以空氣式噴砂將粒徑數μm的矽粒子在一定時間內均一照射而得預定的上面2b。亦即，如表1之例1所示，形成高度h=60μm、直徑d=21mm、相鄰接的凸部的間隔a=37.3mm，將梨皮紋理面設為頂面的凸部1，獲得在基板吸附面具備有平均單位面積1m2 為n=830個的凸部1的彈性吸附層2。此外，為了將吸附電極4連接在外部電源10，由吸附電極4將電位供給線9通過絕緣套筒8取出至外部，使實施例1之靜電吸盤101完成。Next, the ruthenium particles having a particle diameter of several μm were uniformly irradiated by air blasting on the pear skin texture surface of the micro bismuth oxide sheet by a predetermined mask made of stainless steel for a predetermined period of time to obtain a predetermined upper surface 2b. That is, as shown in the first example of Table 1, the height h = 60 μm, the diameter d = 21 mm, the interval a of the adjacent convex portions a = 37.3 mm, and the pear skin texture surface is the convex portion 1 of the top surface, An elastic adsorption layer 2 having a convex portion 1 having an average unit area of 1 m 2 and n = 830 was obtained on the substrate adsorption surface. Further, in order to connect the adsorption electrode 4 to the external power source 10, the potential supply line 9 is taken out to the outside through the insulating sleeve 8 by the adsorption electrode 4, and the electrostatic chuck 101 of the first embodiment is completed.
為了確認上述所得之靜電吸盤101在當以吸附力F=4900Pa吸附/保持基板6時，彈性吸附層2中的凸部1以什麼程度相接觸，而進行以下試驗。將直徑300mm、厚度10mm、及全體平坦度Wh為1μm的透明派熱克斯(Pyrex)玻璃板載置於由凸部1的頂面所構成的基板吸附面，藉由具有平面台座的衝壓機予以加壓。此時，以玻璃板的本身重量與所施加的壓力成為平均單位面積為合計4900Pa的方式加以管理。首先，在經加壓後的狀態下，通過透明派熱克斯玻璃板，經以目測確認凸部1的接觸狀態，確認出所有凸部1以其頂面相接觸。順帶一提，所有凸部1與玻璃板相接觸的情形與未相接觸的情形相比，由於光的干涉條紋的態樣有所不同，因此可藉由目測來判別兩方的狀態。此外，以其他試驗方法而言，在玻璃板與靜電吸盤101的基板吸附面之間夾入感壓紙，與上述同樣地藉由衝壓機予以加壓，確認出感壓紙係在所有凸部1的部位起反應，且所有凸部1以其頂面相接觸。此外，以比較實驗而言，在將玻璃板的本身重量與所施加的壓力的合計設為1/2且平均單位面積為合計2450Pa的條件下進行相同的實驗的結果，確認出所有凸部1中的3分之2以其頂面與玻璃板相接觸。In order to confirm that the electrostatic chuck 101 obtained as described above adsorbs/holds the substrate 6 at an adsorption force F=4900 Pa, to what extent the convex portions 1 in the elastic adsorption layer 2 are in contact with each other, the following test was conducted. A transparent Pyrex glass plate having a diameter of 300 mm, a thickness of 10 mm, and an overall flatness Wh of 1 μm is placed on the substrate adsorption surface composed of the top surface of the convex portion 1 by a punch having a flat pedestal Pressurize. At this time, the weight of the glass plate itself and the applied pressure were adjusted so that the average unit area was 4,900 Pa in total. First, in the pressed state, the contact state of the convex portion 1 was visually confirmed by the transparent Pyrex glass plate, and it was confirmed that all the convex portions 1 were in contact with the top surface thereof. Incidentally, the state in which all the convex portions 1 are in contact with the glass plate is different from the case in which the glass plate is not in contact with each other, and the state of the interference fringes of the light is different, so that the state of both sides can be discriminated by visual inspection. Further, in another test method, the pressure sensitive paper was sandwiched between the glass plate and the substrate suction surface of the electrostatic chuck 101, and pressed in the same manner as described above to confirm that the pressure sensitive paper was attached to all the convex portions. The portion of 1 reacts and all of the projections 1 are in contact with their top faces. In addition, in the comparative experiment, the results of the same experiment were carried out under the condition that the total weight of the glass plate and the applied pressure were 1/2 and the average unit area was 2450 Pa in total, and all the convex portions 1 were confirmed. Two-thirds of the two are in contact with the glass plate with their top surface.
在厚度25μm的聚醯亞胺薄片，將貼合有表面被處理成梨皮紋理的厚度100μm的矽氧薄片的複合薄片11、厚度13μm的丙烯酸系環氧鍵結薄片12、及厚度12μm的電解銅箔13(古河銅箔(股)(Furukawa Circuit Foil Co.)製)分別切成直徑298mm的圓形，利用衝壓成型，以3MPa、170℃的條件予以層積化。In a polyimide film having a thickness of 25 μm, a composite sheet 11 having a 100 μm-thick xenon oxide sheet having a surface treated with a pear skin texture, an acrylic epoxy-bonded sheet 12 having a thickness of 13 μm, and an electrolysis having a thickness of 12 μm were bonded. Copper foil 13 (manufactured by Furukawa Circuit Foil Co., Ltd.) was cut into a circular shape having a diameter of 298 mm, and laminated by a pressure of 3 MPa and 170 ° C by press molding.
為了將上述中經層積化的衝壓體的單面側的銅箔形成為雙極電極，將其中心作為對稱軸，藉由蝕刻處理形成經10分割後之相鄰的扇形形狀電極(相鄰接的電極間距離3mm)。接著，以隔著切成直徑298mm之與上述相同厚度13μm的丙烯酸系環氧鍵結薄片12，覆蓋在上述中蝕刻所得的電極面的方式，疊合厚度50μm的聚醯亞胺薄片14(東麗‧杜邦(股)製，Kapton薄膜型式200H)，藉由與上述相同的條件，予以衝壓成型而使其一體層積。In order to form the copper foil on one side of the above-mentioned intermediate laminated body into a bipolar electrode, the center is taken as the axis of symmetry, and the adjacent sector-shaped electrodes of 10 divisions are formed by etching treatment (adjacent The distance between the connected electrodes is 3 mm). Then, the acrylic epoxy-bonded sheet 12 having a diameter of 298 mm and having the same thickness of 13 μm as described above was overlaid on the electrode surface obtained by etching in the above-mentioned manner, and the polyimide film 14 having a thickness of 50 μm was laminated (east). Lib DuPont Co., Ltd., Kapton film type 200H) was formed into a laminate by stamping and molding under the same conditions as above.
接著，使厚度55μm的Kapton單面黏著帶(Okamoto股份有限公司1030E)接著在上述中所得之層積體的梨皮紋理面的全面，此外，為了在電極接合端子，將以聚醯亞胺薄片14覆蓋的電極面朝向上側而載置於熱板上，一面加熱，一面將銅製端子作焊接。Next, a Kapton single-sided adhesive tape (Okamoto Co., Ltd. 1030E) having a thickness of 55 μm was applied to the entire surface of the pear skin texture of the laminate obtained in the above, and further, in order to bond the terminal, the polyimide film was used. The electrode surface covered by 14 is placed on the hot plate toward the upper side, and the copper terminal is welded while being heated.
接著，在與上述中所使用者為相同的Kapton單面黏著帶，以直徑23mm之開口部的中心被配置在邊長為35mm的正三角形的各頂點的方式鑽開複數孔而形成為圖案遮罩，將其配置在氧化鋁多孔真空吸盤上，以使上述所得之層積體的黏著帶側相對向的方式載置於該圖案遮罩上，以成為1Pa的方式作真空吸引。藉此，形成與圖案遮罩的孔徑與厚度相對應的凹凸，如後所述，在最後將Kapton單面黏著帶剝下之後，將具有梨皮紋理面的矽氧薄片作為頂面，而形成表2所示之凸部。Next, in the Kapton single-sided adhesive tape which is the same as the above-mentioned user, a plurality of holes are drilled so that the center of the opening of the diameter of 23 mm is disposed at each vertex of the equilateral triangle having a side length of 35 mm, and the pattern is covered. The cover was placed on an alumina porous vacuum chuck, and the adhesive tape side of the laminate obtained as described above was placed on the pattern mask so as to be vacuum-absorbed in a manner of 1 Pa. Thereby, the unevenness corresponding to the aperture and the thickness of the pattern mask is formed, and as described later, after the Kapton single-sided adhesive tape is finally peeled off, the silicon oxide sheet having the texture of the pear skin is used as the top surface to form a top surface. The convex portion shown in Table 2.
在以氧化鋁多孔真空吸盤作吸引的狀態下，直接在安裝有銅製端子之側的聚醯亞胺薄片面，將矽氧接著劑15(邁圖高新材料日本有限公司(Momentive Performance Materials Japan LLC)，型式TSE3331)以成為厚度150μm的方式作塗佈之後，載置板厚16mm及直徑298mm且在內部具有冷卻水水路的鋁製基座16，將正在吸引真空吸盤的泵的電源切斷，在消泡腔室內使其消泡1小時，之後在熱板上將全體加熱至140℃，經數小時使矽氧接著劑硬化。之後，使經一體化者由真空吸盤脫離而進行清掃，藉由剝下覆蓋具有梨皮紋理面之矽氧薄片的Kapton單面黏著帶，使第3圖所示之具備有凸部1之實施例2之靜電吸盤(No.1)完成。In the state of being attracted by the alumina porous vacuum chuck, the silicone adhesive 15 is directly applied to the surface of the polyimide film on the side on which the copper terminal is mounted (Momentive Performance Materials Japan LLC) After the coating is applied so as to have a thickness of 150 μm, an aluminum base 16 having a thickness of 16 mm and a diameter of 298 mm and having a cooling water passage therein is placed, and the power source of the pump that is sucking the vacuum chuck is cut off. The defoaming chamber was defoamed for 1 hour, after which the whole was heated to 140 ° C on a hot plate, and the niobium oxide was hardened over several hours. Thereafter, the integrated person is removed from the vacuum chuck, and the Kapton single-sided adhesive tape covering the tantalum oxide sheet having the texture of the pear skin is peeled off, so that the convex portion 1 shown in FIG. 3 is provided. The electrostatic chuck (No. 1) of Example 2 was completed.
此外，以該實施例中所得之靜電吸盤的變形例而言，除了形成上述表1所記載之例3中的凸部以外，係與上述相同地獲得本發明之實施例之靜電吸盤(No.2)。Further, in the modification of the electrostatic chuck obtained in the above embodiment, the electrostatic chuck (No.) of the embodiment of the present invention was obtained in the same manner as described above except that the convex portion in Example 3 described in Table 1 above was formed. 2).
關於上述所得之No.1及No.2的靜電吸盤，分別搭載於離子注入裝置，一面以供給電壓±750V吸附/保持Φ 300mm的矽晶圓，一面對該矽晶圓，以平均離子束功率450W、注入量1×1015 個/cm2 的條件進行離子注入。此時，在鋁製基座的水路，以2L/min的條件將冷卻水予以排水。接著，以耐熱標籤(Thermo Label)量測離子注入時的晶圓表面溫度，結果當以No.1的靜電吸盤作吸附/保持時，係可將溫度上升抑制為未達48℃，若為No.2的靜電吸盤，則可將溫度上升抑制為未達89℃。此外，若為使用No.1的靜電吸盤的試驗，在使離子束功率增大至600W時，在與上述相同的注入量中亦得溫度上升為未達60℃的結果。此可謂為匹敵伴隨氣體冷卻之習知靜電吸盤的性能。The electrostatic chucks of No. 1 and No. 2 obtained as described above were respectively mounted on an ion implantation apparatus, and an erbium wafer of Φ 300 mm was adsorbed/held at a supply voltage of ±750 V, and an average ion beam was applied to the ruthenium wafer. Ion implantation was performed under the conditions of a power of 450 W and an injection amount of 1 × 10 15 /cm 2 . At this time, the cooling water was drained on the water path of the aluminum base at 2 L/min. Next, the surface temperature of the wafer during ion implantation is measured with a Thermo Label, and as a result, when the electrostatic chuck of No. 1 is used for adsorption/holding, the temperature rise can be suppressed to less than 48 ° C. The electrostatic chuck of .2 can suppress the temperature rise to less than 89 °C. Further, in the test using the electrostatic chuck of No. 1, when the ion beam power was increased to 600 W, the temperature was increased to less than 60 ° C in the same injection amount as described above. This is comparable to the performance of conventional electrostatic chucks with gas cooling.
1．．．凸部1. . . Convex
2．．．彈性吸附層2. . . Elastic adsorption layer
2b．．．彈性吸附層之凸部以外的上面2b. . . Above the convex portion of the elastic adsorption layer
3．．．下部絕緣層3. . . Lower insulation
4．．．吸附電極4. . . Adsorption electrode
5．．．基座5. . . Pedestal
6．．．基板6. . . Substrate
7．．．水路7. . . waterway
8．．．絕緣套筒8. . . Insulating sleeve
9．．．電位供給線9. . . Potential supply line
10．．．電源10. . . power supply
11．．．複合薄片11. . . Composite sheet
12．．．鍵結薄片12. . . Bonded sheet
13．．．電解銅箔13. . . Electrolytic copper foil
14．．．聚醯亞胺薄片14. . . Polyimine sheet
15．．．矽氧接著劑15. . . Oxide adhesive
16．．．基座16. . . Pedestal
100、101．．．靜電吸盤100, 101. . . Electrostatic chuck
第1圖係顯示本發明之靜電吸盤的說明圖，(a)係顯示彈性吸附層中之凸部的態樣的平面模式圖，(b)係顯示由A-A剖面方向所觀看的靜電吸盤的態樣的剖面模式圖。1 is an explanatory view showing an electrostatic chuck of the present invention, (a) is a plan view showing a state of a convex portion in an elastic adsorption layer, and (b) is a state showing an electrostatic chuck viewed from an AA cross-sectional direction. Sample profile diagram.
第2圖係顯示本發明之實施例1之靜電吸盤的說明圖，(a)係顯示由彈性吸附層所觀看的平面模式圖，(b)係顯示由B-B剖面方向所觀看的靜電吸盤的態樣的剖面模式圖。Fig. 2 is an explanatory view showing an electrostatic chuck according to Embodiment 1 of the present invention, wherein (a) shows a planar pattern view viewed from an elastic adsorption layer, and (b) shows a state of an electrostatic chuck viewed from a BB sectional direction. Sample profile diagram.
第3圖係由側面觀看本發明之實施例2之靜電吸盤的剖面模式圖。Fig. 3 is a cross-sectional schematic view showing the electrostatic chuck of the second embodiment of the present invention as seen from the side.
1．．．凸部1. . . Convex
2．．．彈性吸附層2. . . Elastic adsorption layer
2b．．．彈性吸附層之凸部以外的上面2b. . . Above the convex portion of the elastic adsorption layer
3．．．下部絕緣層3. . . Lower insulation
4．．．吸附電極4. . . Adsorption electrode
5．．．基座5. . . Pedestal
6．．．基板6. . . Substrate
7．．．水路7. . . waterway
8．．．絕緣套筒8. . . Insulating sleeve
9．．．電位供給線9. . . Potential supply line
10．．．電源10. . . power supply
101．．．靜電吸盤101. . . Electrostatic chuck
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008289260 | 2008-10-15 |
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| TWI467691B true TWI467691B (en) | 2015-01-01 |
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| JP (1) | JP5458323B2 (en) |
| KR (1) | KR101559947B1 (en) |
| CN (1) | CN102187446B (en) |
| TW (1) | TWI467691B (en) |
| WO (1) | WO2010044398A1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| HK1158368A1 (en) | 2012-07-13 |
| JP5458323B2 (en) | 2014-04-02 |
| CN102187446B (en) | 2013-07-24 |
| KR20110084888A (en) | 2011-07-26 |
| TW201026582A (en) | 2010-07-16 |
| KR101559947B1 (en) | 2015-10-13 |
| WO2010044398A1 (en) | 2010-04-22 |
| CN102187446A (en) | 2011-09-14 |
| JPWO2010044398A1 (en) | 2012-03-15 |
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