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WO2012002383A1 - Target mounting mechanism - Google Patents

Target mounting mechanism Download PDF

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Publication number
WO2012002383A1
WO2012002383A1 PCT/JP2011/064801 JP2011064801W WO2012002383A1 WO 2012002383 A1 WO2012002383 A1 WO 2012002383A1 JP 2011064801 W JP2011064801 W JP 2011064801W WO 2012002383 A1 WO2012002383 A1 WO 2012002383A1
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WIPO (PCT)
Prior art keywords
target
clamp
cathode
mounting mechanism
convex portion
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Ceased
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PCT/JP2011/064801
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French (fr)
Japanese (ja)
Inventor
泰 石丸
典生 大山
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Ulvac Techno Ltd
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Ulvac Techno Ltd
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Priority to CN201180022714.7A priority Critical patent/CN102884222B/en
Priority to JP2012522641A priority patent/JP5572710B2/en
Publication of WO2012002383A1 publication Critical patent/WO2012002383A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/342Hollow targets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)

Definitions

  • a sputtering apparatus using a cylindrical target has been proposed as means for depositing a metal film with a uniform thickness and uniformity on such a large area deposition target (see, for example, Patent Document 1).
  • the cylindrical target is characterized by higher usage efficiency than the flat target.
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide a target mounting mechanism capable of easily mounting a cylindrical target to a cathode at an accurate mounting position. It is another object of the present invention to provide a target mounting mechanism capable of making the erosion pattern of the target uniform and extending the life of the target.
  • One aspect of the present invention is a target mounting mechanism that detachably mounts a cylindrical target used in a sputtering apparatus to a connecting portion of a cathode
  • the target includes a cylindrical base body and a target material covering the base body, a central region where the target material is disposed, and a connection region where the base body is exposed at both ends excluding the central region.
  • a connecting portion of the cathode formed with a substantially cylindrical clamp that internally includes the connecting portion and the connecting region; a first engaging convex portion formed in the connecting region of the target;
  • the second engagement convex portion formed on the inner peripheral surface of the clamp is relatively moved only along the circumferential direction of the target in a state where the connection portion and the connection region are present in the clamp. Are engaged.
  • the torque required for the engagement between the first engagement protrusion and the second engagement protrusion is 1 (kgf ⁇ cm) or more, It is preferably 20 (kgf ⁇ cm) or less.
  • three or more of the second engaging convex portions are formed, are on the same line in the inner peripheral surface direction of the clamp, and are viewed around the rotation axis of the target.
  • the other second engaging projections are also axisymmetric with respect to a line segment that is also on the imaginary circle and passes through the center and at least one of the second engaging projections. It is preferable that they are arranged.
  • the anode (anode) 12 is composed of, for example, a plurality of flat electrodes.
  • the anode 12 only needs to be electrically connected to the ground via a power cable.
  • An object to be deposited, for example, a glass plate 19 is placed on one surface of the anode 12 that is such a flat electrode.
  • the Ar gas supply device 18 is connected to the inside of the reaction chamber 11 through a gas supply pipe. Thereby, Ar gas is supplied into the reaction chamber 11 as a plasma generating gas during film formation.
  • the entire target 21 is formed in a substantially cylindrical shape.
  • the target 21 includes a hollow cylindrical base (backing tube) 22 and a target material 23 that covers the outer peripheral surface of the base 22 in a central region S1 along the axial direction R of the base 22. Then, both end sides excluding the central region S1 are connected regions S2 where the base 22 is exposed.
  • the substrate (backing tube) 22 may be formed of, for example, a stainless steel tube having a thickness of about several millimeters.
  • the target material 23 covering the central region S1 of the substrate 22 is a thin film material to be deposited on the deposition object, for example, various metal materials such as W, Ti, Ta, Mo, Al alloy, silicon, indium-tin oxide. (Hereinafter referred to as ITO) or the like may be formed with a predetermined thickness.
  • an alternating current (AC) is passed from the alternating current (AC) power supply device 14 to the two targets 21 and 21 via the cathode 13.
  • an electric current is applied to one target 21 and the other target 21 so that the cathode and the anode are alternately switched.
  • FIG. 3 is an enlarged perspective view showing the target mounting mechanism of the present invention.
  • FIG. 4 is a cross-sectional view showing the target mounting mechanism of the present invention.
  • first engaging convex portions 61 are formed along the circumferential direction of the base body 22.
  • the first engaging protrusions 61 are protrusions that protrude outward from the peripheral surface 22 a of the base material 22, and are equally disposed at, for example, six locations along the circumferential direction Q of the base body 22.
  • the first engaging convex portion 61 may be formed integrally with the base body 22.
  • the surface of the spacer 76 formed of iron, stainless steel, copper alloy, or the like is subjected to a surface treatment in which a fluorine resin is combined with the electroless nickel deposited in the form of particles on the base. May be formed.
  • a fluorine resin is combined with the electroless nickel deposited in the form of particles on the base. May be formed.
  • connection region S2 of the base material 22 is inserted into the clamp 71, the clamp 71 is then rotated around the axial direction R only along the circumferential direction Q of the target 21, as shown in FIG. 5B.
  • the second engaging convex portions 72 formed in the three grooves 71b are connected to the introduction portion 61a of the first engaging convex portion 61 and the inner peripheral surface. It overlaps in the radial direction of 71a. In this state, since the height from the peripheral surface 22a of the introduction part 61a is low, the second engagement convex part 72 and the first engagement convex part 61 hardly contact each other.
  • the clamp 71 is set to a predetermined engagement by having a structure in which a contact sound is emitted when the second engaging convex portion 72 hits the locking portion 61c of the first engaging convex portion 61. It can be perceived that it has been rotated to a position. Thereby, poor engagement due to insufficient rotation of the clamp 71 can be prevented.
  • the center of the cathode 13 and the axis of the target 21 can be easily matched by the engagement of the first engaging convex portion 61 and the second engaging convex portion 72, The shaft center can be rotated without being decentered.
  • the distance between the film formation target and the target 21 is uniform over the entire circumference of the target 21, and a film having a uniform thickness with no unevenness can be formed over the entire surface of the film formation target. become.
  • the first engagement convex portion 31 is formed in, for example, a substantially L shape in plan view.
  • the first engagement convex portion 31 includes a first engagement means E1 extending along the axial direction R of the target 21 and a second engagement means E2 extending along the circumferential direction Q of the target 21.
  • third engaging means E3 arranged in a direction substantially perpendicular to the circumferential direction Q of the target 21.
  • a gasket ring 47 is formed at the end of the connecting portion S3 of the cathode 13.
  • the gasket ring 47 is made of, for example, aluminum, and keeps the hollow interior of the base material 22 airtight by contacting the end of the base material 22 of the target 21.
  • the first engaging means E1 constituting the first engaging convex portion 31 and the one surface L1 of the second engaging convex portion 42 slide along the axial direction R. Meanwhile, the connection region S ⁇ b> 2 of the base material 22 is inserted into the clamp 41.
  • the clamp 41 is rotated only along the circumferential direction Q of the target 21, and the one surface L1 of the second engagement convex portion 42 and the first engagement means E1 are in the circumferential direction.
  • the clamp 41 is rotated along the circumferential direction Q of the target 21, as shown in FIG. 9C.
  • the second engagement means E2 constituting the first engagement protrusion 31 and the other surface L2 of the second engagement protrusion 42 slide along the circumferential direction Q. While doing this, the clamp 41 rotates.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A target mounting mechanism detachably mounts a cylindrical target, which is used in a spattering device, to connection sections of cathodes. The target is provided with cylindrical base bodies and also with a target member which covers the base bodies, and the target has a center region in which the target member is disposed and which has connection regions from which the base bodies are exposed at the opposite ends of the target which are located outside the center region. The connection sections of the cathodes each comprise a substantially cylindrical clamp in which the connection section and the connection region are present. A first engagement protrusion section formed in each of the connection regions of the target and a second engagement protrusion section formed in the inner peripheral surface of the clamp are engaged with each other when the connection section and the connection region move relative to each other only in the circumferential direction of the target while the connection section and the connection region are present within the clamp.

Description

ターゲット取付機構Target mounting mechanism

 本発明は、スパッタリング装置のターゲット取付機構に関し、詳しくは、円筒形のターゲットをカソードに対して容易にかつ確実に取り付けが可能なターゲット取付機構に関する。
 本願は、2010年6月28日に、日本に出願された特願2010-146617号に基づき優先権を主張し、その内容をここに援用する。
The present invention relates to a target mounting mechanism of a sputtering apparatus, and more particularly to a target mounting mechanism that can easily and reliably mount a cylindrical target to a cathode.
This application claims priority based on Japanese Patent Application No. 2010-146617 filed in Japan on June 28, 2010, the contents of which are incorporated herein by reference.

 例えば、建材用ガラスとして、Low-Eガラス(低放射ガラス)が普及しつつある。
 この種のLow-Eガラスは、ガラス表面に金属薄膜を成膜することで形成される。従来、ガラス等の表面に金属薄膜を形成する際には、平板状のターゲット(以下、単にターゲットと称する)を備えたマグネトロンスパッタリング装置を用いて成膜を行っていた。
For example, Low-E glass (low emission glass) is becoming popular as glass for building materials.
This type of Low-E glass is formed by forming a metal thin film on the glass surface. Conventionally, when forming a metal thin film on the surface of glass or the like, film formation is performed using a magnetron sputtering apparatus provided with a flat target (hereinafter simply referred to as a target).

 しかしながら、近年の建材用ガラスの大型化に伴って、平板状のターゲットでは、ガラス表面の全体に、均一な厚みで金属膜を成膜することが難しい。
こうした大面積の成膜対象物に均一な厚みでムラなく金属膜を成膜する手段として、円筒形状のターゲットを用いたスパッタリング装置が提案されている(例えば、特許文献1参照)。また、円筒状のターゲットは平板状のターゲットよりも使用効率が高いという特徴がある。
However, with the recent increase in size of glass for building materials, it is difficult for a flat target to form a metal film with a uniform thickness on the entire glass surface.
A sputtering apparatus using a cylindrical target has been proposed as means for depositing a metal film with a uniform thickness and uniformity on such a large area deposition target (see, for example, Patent Document 1). In addition, the cylindrical target is characterized by higher usage efficiency than the flat target.

 円筒形状のターゲットを用いたスパッタリング装置は、円筒形のターゲットが回転軸方向(長手方向)に沿った両端でカソード電極に取り付けられる。従来、ターゲットをカソード電極に取り付ける構成として、例えば、カソード電極に係合するクランプに、断面が半円形の溝をスパイラル状に形成するとともに、ターゲットの端部にも、半円形の溝をスパイラル状に形成する。そして、いずれか一方の溝に円筒形のスパイラルリングを挿入し、他方の溝にスパイラルリングを噛み合わせることによって、ターゲットをカソード電極に取り付ける連結システムが開示されている(特許文献2参照)。 In a sputtering apparatus using a cylindrical target, the cylindrical target is attached to the cathode electrode at both ends along the rotation axis direction (longitudinal direction). Conventionally, as a configuration for attaching a target to a cathode electrode, for example, a semi-circular groove is formed in a spiral shape in a clamp that engages with the cathode electrode, and a semi-circular groove is also formed in a spiral shape at the end of the target. To form. A coupling system is disclosed in which a target is attached to a cathode electrode by inserting a cylindrical spiral ring into one of the grooves and engaging the spiral ring with the other groove (see Patent Document 2).

特開2010-100930号公報JP 2010-1000093 A 特表2006-521515号公報JP-T-2006-521515

 しかしながら、上述した特許文献2にあるような連結システムでは、円筒形のターゲットをカソード電極に取り付ける際に、スパイラルリングを介してターゲットとクランプとを係合するために、取り付け位置がズレやすく、ターゲットの軸心をカソード電極の回転中心に正確に位置合わせして取り付けることが困難であった。このため、ターゲットが偏心して回転しやすく、エロージョンパターンが安定せず、ターゲットの寿命が短いという問題があった。 However, in the connection system as described in Patent Document 2 described above, when the cylindrical target is attached to the cathode electrode, the target and the clamp are engaged via the spiral ring. It was difficult to accurately align and attach the center axis of the electrode to the center of rotation of the cathode electrode. For this reason, there is a problem that the target is eccentric and easily rotates, the erosion pattern is not stable, and the life of the target is short.

 また、例えば、成膜面の一辺が数メートルなど、大型の被成膜物に成膜を行うために、長さが数メートルなど大型のターゲットを用いる場合、ターゲットをカソード電極に取り付ける際に、専用工具を用いてクランプを大きな力で回転させる必要があり、ターゲットの取付けに多大な労力が必要であった。 In addition, for example, when a large target such as several meters in length is used to form a film on a large deposition object such as one side of a film formation surface of several meters, when attaching the target to the cathode electrode, It was necessary to rotate the clamp with a large force using a dedicated tool, and much effort was required for mounting the target.

 本発明は上記事情に鑑みてなされたものであり、円筒形のターゲットをカソードに対して容易に、かつ正確な取付位置で取り付けが可能なターゲット取付機構を提供することを目的とする。また、ターゲットのエロージョンパターンを均一にして、ターゲットの長寿命化を図ることが可能なターゲット取付機構を提供することを目的とする。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a target mounting mechanism capable of easily mounting a cylindrical target to a cathode at an accurate mounting position. It is another object of the present invention to provide a target mounting mechanism capable of making the erosion pattern of the target uniform and extending the life of the target.

(1)本発明の一態様は、スパッタリング装置において用いられる円筒形のターゲットをカソードの連結部に対して着脱可能に取り付けるターゲット取付機構であって、
 前記ターゲットが、円筒形の基体と、この基体を覆うターゲット材とを備えるとともに、前記ターゲット材が配された中央領域と、この中央領域を除く両端側で前記基体が露出する連結領域と、を有し;前記カソードの連結部に、この連結部と前記連結領域とを内在させる略円筒形のクランプが形成され;前記ターゲットの前記連結領域に形成される第一の係合凸部と、前記クランプの内周面に形成される第二の係合凸部とが、前記連結部及び前記連結領域が前記クランプに内在した状態で、前記ターゲットの円周方向に沿ってのみ相対移動することにより、係合されている。
(1) One aspect of the present invention is a target mounting mechanism that detachably mounts a cylindrical target used in a sputtering apparatus to a connecting portion of a cathode,
The target includes a cylindrical base body and a target material covering the base body, a central region where the target material is disposed, and a connection region where the base body is exposed at both ends excluding the central region. A connecting portion of the cathode formed with a substantially cylindrical clamp that internally includes the connecting portion and the connecting region; a first engaging convex portion formed in the connecting region of the target; The second engagement convex portion formed on the inner peripheral surface of the clamp is relatively moved only along the circumferential direction of the target in a state where the connection portion and the connection region are present in the clamp. Are engaged.

(2)上記(1)に記載の態様では、前記第一の係合凸部と前記第二の係合凸部との係合に必要とされるトルクが、1(kgf・cm)以上、20(kgf・cm)以下であることが好ましい。 (2) In the aspect described in (1) above, the torque required for the engagement between the first engagement protrusion and the second engagement protrusion is 1 (kgf · cm) or more, It is preferably 20 (kgf · cm) or less.

(3)上記(1)に記載の態様では、前記第一の係合凸部と前記第二の係合凸部との接触面が、前記ターゲットの円周方向が短手、前記ターゲットの軸方向が長手を成す形状であることが好ましい。 (3) In the aspect described in (1) above, the contact surface between the first engagement protrusion and the second engagement protrusion is short in the circumferential direction of the target, and the axis of the target It is preferable that the direction is a longitudinal shape.

(4)上記(1)に記載の態様では、前記第一の係合凸部と前記第二の係合凸部との係合動作が完了したことを判別する信号を発する構造を備えることが好ましい。 (4) In the aspect described in (1) above, a structure may be provided that generates a signal for determining that the engagement operation between the first engagement convex portion and the second engagement convex portion is completed. preferable.

(5)上記(1)に記載の態様では、前記第二の係合凸部が3つ以上形成され、前記クランプの内周面方向の同一線上にあり、前記ターゲットの回転軸を中心と見なした仮想円上にもあり、かつ前記中心と、前記第二の係合凸部のうち少なくとも一つとを通る線分に対して、それ以外の前記第二の係合凸部が軸対称に配置されていることが好ましい。 (5) In the aspect described in (1) above, three or more of the second engaging convex portions are formed, are on the same line in the inner peripheral surface direction of the clamp, and are viewed around the rotation axis of the target. The other second engaging projections are also axisymmetric with respect to a line segment that is also on the imaginary circle and passes through the center and at least one of the second engaging projections. It is preferable that they are arranged.

(6)上記(1)に記載の態様では、前記カソードの前記連結部における軸心に対して垂直に延在する部分と、前記基体との接触部分とに設けられたガスケットリングを更に備えることが好ましい。 (6) In the aspect described in the above (1), further includes a gasket ring provided at a portion extending perpendicularly to the axis of the connecting portion of the cathode and a contact portion with the base. Is preferred.

(7)上記(1)に記載の態様では、前記カソードの前記連結部における軸心に対して垂直に延在する部分と、前記基体とを密着させる固定手段を更に備えることが好ましい。 (7) In the aspect described in (1) above, it is preferable to further include a fixing unit that closely contacts the base and a portion of the connecting portion of the cathode that extends perpendicular to the axis.

(8)上記(1)に記載の態様では、前記カソードの前記連結部における軸心に対して垂直に延在する部分と、前記クランプとの隙間に配置されたスペーサを更に備えることが好ましい。
(9)上記(8)の場合、前記スペーサに、表面処理が施されていることが好ましい。
(8) In the aspect described in (1) above, it is preferable to further include a spacer disposed in a gap between the portion of the cathode that extends perpendicularly to the axial center of the connecting portion and the clamp.
(9) In the case of (8) above, it is preferable that the spacer is subjected to a surface treatment.

 以上に説明したように、上記(1)に記載の態様によれば、スパッタリング装置のカソードに円筒形のターゲットを取付ける際に、カソードに形成されたクランプをターゲットの端部の連結領域に挿入し、ターゲットの円周方向に沿ってのみ相対移動させるだけで第一の係合凸部と第二の係合凸部とが係合し、円筒形のターゲットをカソードに対して取り付けることができる。 As described above, according to the aspect described in (1) above, when the cylindrical target is attached to the cathode of the sputtering apparatus, the clamp formed on the cathode is inserted into the connection region at the end of the target. The first engaging convex portion and the second engaging convex portion can be engaged with each other only by relatively moving along the circumferential direction of the target, and the cylindrical target can be attached to the cathode.

 このため、第一の係合凸部と第二の係合凸部との係合によって、カソードの中心とターゲットの軸心とを容易に一致させることができ、ターゲットを、軸心を回転中心として偏心することなく回転させることができる。これによって、被成膜物とターゲットとの距離がターゲットの全周に渡って均一となり、ムラのない均一な厚みの皮膜を被成膜物の全面に渡って成膜することが可能になる。 For this reason, the center of the cathode and the axis of the target can be easily matched by the engagement of the first engagement convex part and the second engagement convex part, and the target is rotated about the axis. And can be rotated without eccentricity. Thus, the distance between the film formation target and the target is uniform over the entire circumference of the target, and a film having a uniform thickness with no unevenness can be formed over the entire surface of the film formation target.

 また、大型で重量のあるターゲットを用いる場合でも、ターゲットの取り付けの際に、クランプをターゲットの円周方向に沿ってのみ相対移動させるだけで第二の係合凸部と第一の係合凸部とを係合し、ターゲットをカソードに取り付けることができる。このため、従来のように専用工具を用いてクランプを大きな力で回転させるなどの必要がなく、専用工具を用いずとも小さな力でクランプをターゲットの円周方向に沿って回すだけで、容易にターゲットをカソードに取り付けることが可能になる。 Even when a large and heavy target is used, when the target is attached, the second engagement convex portion and the first engagement convex portion are simply moved relative to each other only along the circumferential direction of the target. And the target can be attached to the cathode. For this reason, there is no need to rotate the clamp with a large force using a dedicated tool as in the past, and it is easy to rotate the clamp along the circumferential direction of the target with a small force without using a dedicated tool. It becomes possible to attach the target to the cathode.

本発明の一実施形態に係るスパッタリング装置の縦断面図である。It is a longitudinal cross-sectional view of the sputtering device which concerns on one Embodiment of this invention. 同スパッタリング装置におけるターゲットを含む領域を示す要部拡大斜視図である。It is a principal part expansion perspective view which shows the area | region containing the target in the sputtering device. 同実施形態のターゲット取付機構を示す拡大斜視図である。It is an expansion perspective view which shows the target attachment mechanism of the embodiment. 同実施形態のターゲット取付機構を示す断面図である。It is sectional drawing which shows the target attachment mechanism of the embodiment. 同実施形態のターゲットの取付工程を段階的に示す説明図である。It is explanatory drawing which shows the attachment process of the target of the embodiment in steps. 同実施形態のターゲットの取付工程を段階的に示す説明図である。It is explanatory drawing which shows the attachment process of the target of the embodiment in steps. 同実施形態のターゲットの取付工程を段階的に示す説明図である。It is explanatory drawing which shows the attachment process of the target of the embodiment in steps. 同実施形態のターゲットの取付工程を段階的に示す説明図である。It is explanatory drawing which shows the attachment process of the target of the embodiment in steps. 同実施形態のターゲットの取付工程を段階的に示す説明図である。It is explanatory drawing which shows the attachment process of the target of the embodiment in steps. 同実施形態における第二の係合凸部の配置例を示す説明図である。It is explanatory drawing which shows the example of arrangement | positioning of the 2nd engagement convex part in the embodiment. 同実施形態における第二の係合凸部の配置例を示す説明図である。It is explanatory drawing which shows the example of arrangement | positioning of the 2nd engagement convex part in the embodiment. 同実施形態における第二の係合凸部の配置例を示す説明図である。It is explanatory drawing which shows the example of arrangement | positioning of the 2nd engagement convex part in the embodiment. 本発明のターゲット取付機構の別な実施形態を示す拡大斜視図である。It is an expansion perspective view which shows another embodiment of the target attachment mechanism of this invention. 本発明のターゲット取付機構の別な実施形態を示す断面図である。It is sectional drawing which shows another embodiment of the target attachment mechanism of this invention. 別な実施形態におけるターゲットの取付工程を段階的に示す説明図である。It is explanatory drawing which shows the attachment process of the target in another embodiment in steps. 別な実施形態におけるターゲットの取付工程を段階的に示す説明図である。It is explanatory drawing which shows the attachment process of the target in another embodiment in steps. 別な実施形態におけるターゲットの取付工程を段階的に示す説明図である。It is explanatory drawing which shows the attachment process of the target in another embodiment in steps.

 以下、図面を参照して、本発明に係るターゲット取付機構の一実施形態について説明する。なお、本実施形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。また、以下の説明で用いる図面は、本発明の特徴をわかりやすくするために、便宜上、要部となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。 Hereinafter, an embodiment of a target mounting mechanism according to the present invention will be described with reference to the drawings. The present embodiment is specifically described for better understanding of the gist of the invention, and does not limit the invention unless otherwise specified. In addition, in the drawings used in the following description, in order to make the features of the present invention easier to understand, there is a case where a main part is shown in an enlarged manner for the sake of convenience. Not necessarily.

 最初に、本実施形態のターゲット取付機構を備えたマグネトロンスパッタリング装置(以下、スパッタリング装置と称する)を説明する。
 図1は、スパッタリング装置の構成を示す縦断面図である。また、図2は、ターゲットを含む領域を示す要部拡大斜視図である。
 スパッタリング装置10は、反応室11、アノード(陽極)12、カソード(陰極)13、真空ポンプ17、およびArガス供給装置18を備えている。反応室11の内部は、真空ポンプ17によって減圧可能であり、成膜時には、例えば、真空度6Pa程度まで減圧される。
First, a magnetron sputtering apparatus (hereinafter referred to as a sputtering apparatus) provided with the target mounting mechanism of the present embodiment will be described.
FIG. 1 is a longitudinal sectional view showing the configuration of the sputtering apparatus. FIG. 2 is an enlarged perspective view of a main part showing a region including the target.
The sputtering apparatus 10 includes a reaction chamber 11, an anode (anode) 12, a cathode (cathode) 13, a vacuum pump 17, and an Ar gas supply device 18. The inside of the reaction chamber 11 can be depressurized by a vacuum pump 17 and is depressurized, for example, to a degree of vacuum of about 6 Pa during film formation.

 アノード(陽極)12は、例えば、複数の平板状電極からなっている。アノード12は、電力ケーブルを介してアースと電気的に接続されていればよい。こうした平板状電極であるアノード12の一面には、被成膜物、例えばガラス板19が載置される。 The anode (anode) 12 is composed of, for example, a plurality of flat electrodes. The anode 12 only needs to be electrically connected to the ground via a power cable. An object to be deposited, for example, a glass plate 19 is placed on one surface of the anode 12 that is such a flat electrode.

 カソード(陰極)13は、後述するターゲット21に電気的に接続される端子を構成し、電力ケーブルを介して交流(AC)電源装置14に電気的に接続されている。また、このカソード13は、冷却水供給装置15と接続される冷却水循環パイプ16によって、成膜時の温度上昇が抑制される。 The cathode (cathode) 13 constitutes a terminal that is electrically connected to a target 21 described later, and is electrically connected to an alternating current (AC) power supply device 14 via a power cable. In addition, the temperature of the cathode 13 during film formation is suppressed by the cooling water circulation pipe 16 connected to the cooling water supply device 15.

 Arガス供給装置18は、ガス供給パイプを介して反応室11の内部に接続される。これにより、成膜時に、反応室11内にプラズマ発生用ガスとしてArガスが供給される。 The Ar gas supply device 18 is connected to the inside of the reaction chamber 11 through a gas supply pipe. Thereby, Ar gas is supplied into the reaction chamber 11 as a plasma generating gas during film formation.

 図2に示すように、ターゲット21は、全体が略円筒形に形成されている。ターゲット21は、中空円筒形の基体(バッキングチューブ)22と、この基材22の軸心方向Rに沿った中央領域S1で、基体22の外周面を覆うターゲット材23とからなる。そして、この中央領域S1を除く両端側は、基体22が露出した連結領域S2とされている。 As shown in FIG. 2, the entire target 21 is formed in a substantially cylindrical shape. The target 21 includes a hollow cylindrical base (backing tube) 22 and a target material 23 that covers the outer peripheral surface of the base 22 in a central region S1 along the axial direction R of the base 22. Then, both end sides excluding the central region S1 are connected regions S2 where the base 22 is exposed.

 基体(バッキングチューブ)22は、例えば、厚みが数ミリ程度のステンレスチューブによって形成されていればよい。基体22の中央領域S1を覆うターゲット材23は、被成膜物に成膜したい薄膜の材料、例えば、W、Ti、Ta、Mo、Al合金等の各種金属材料、シリコン、インジウム-スズ酸化物(以下、ITOと呼ぶ)等を所定の厚みで形成したものであればよい。 The substrate (backing tube) 22 may be formed of, for example, a stainless steel tube having a thickness of about several millimeters. The target material 23 covering the central region S1 of the substrate 22 is a thin film material to be deposited on the deposition object, for example, various metal materials such as W, Ti, Ta, Mo, Al alloy, silicon, indium-tin oxide. (Hereinafter referred to as ITO) or the like may be formed with a predetermined thickness.

 こうした円筒形のターゲット21がスパッタリング装置10にセットされた際に、基体22の内部にマグネット51(図1参照)が配される。このマグネット51は、ターゲット材23の周囲に磁場を形成し、マグネトロンスパッタリングを行う。こうしたマグネット51によってプラズマをターゲット21付近に封じ込めることで、スパッタ速度を高速化するとともに、ターゲット21の近傍にターゲットの薄膜が堆積することを防止する。 When such a cylindrical target 21 is set in the sputtering apparatus 10, a magnet 51 (see FIG. 1) is arranged inside the base 22. The magnet 51 forms a magnetic field around the target material 23 and performs magnetron sputtering. By confining the plasma in the vicinity of the target 21 with such a magnet 51, the sputtering speed is increased and the thin film of the target is prevented from being deposited in the vicinity of the target 21.

 ターゲット21の両端部、即ち連結領域S2には、カソード(陰極)13が電気的、かつ機械的に接続される。この連結領域S2とカソード13との接続は、カソードの連結部S3に形成されたクランプ41を介して行われる。 The cathode (cathode) 13 is electrically and mechanically connected to both ends of the target 21, that is, the connection region S2. This connection region S2 and the cathode 13 are connected via a clamp 41 formed in the cathode connection portion S3.

 このようなターゲット21は、例えば、同一のものが2本並列に形成されていればよい。そして、それぞれのターゲット21は、図示しないモータによって、成膜中に所定の回転速度で回転する。 For example, two such targets 21 may be formed in parallel. Each target 21 is rotated at a predetermined rotation speed during film formation by a motor (not shown).

 以上のような構成のスパッタリング装置10を用いて、被成膜物であるガラス19の一面に、例えば金属薄膜を成膜する際には、まず、反応室11内にArガス供給装置18からArガスを導入し、同時に真空ポンプ17により反応室11内を減圧させ、例えば圧力を1.3Paに設定する。次に、被成膜物であるガラス19を載置したアノード12を、並列して配された2本のターゲット21,21に対面させる。 When a thin metal film, for example, is formed on one surface of the glass 19 that is the film formation object using the sputtering apparatus 10 having the above-described configuration, first, an Ar gas supply device 18 is placed in the reaction chamber 11 from the Ar gas supply device 18. Gas is introduced, and the inside of the reaction chamber 11 is simultaneously depressurized by the vacuum pump 17, and the pressure is set to 1.3 Pa, for example. Next, the anode 12 on which the glass 19 that is the film formation is placed is made to face the two targets 21 and 21 arranged in parallel.

 そして、交流(AC)電源装置14からカソード13を介して2本のターゲット21,21に交流電流(AC)を流す。この時、一方のターゲット21と他方のターゲット21には、電流が陰極と陽極に交互に入れ替わるように印加される。 Then, an alternating current (AC) is passed from the alternating current (AC) power supply device 14 to the two targets 21 and 21 via the cathode 13. At this time, an electric current is applied to one target 21 and the other target 21 so that the cathode and the anode are alternately switched.

 ターゲット21,21に交流電流(AC)が印加されると、反応室11内のArガスがグロー放電プラズマとなり、多数のArイオンが発生する。そして、この多数のArイオンはカソード13に接続されたターゲット21のターゲット材23に衝突する。ターゲット材23はこのArの衝突によりスパッタリングされ、ターゲット材の構成材料の粒子(スパッタ粒子)は、アノード12に載置されたガラス19上に堆積する。これによって、ガラス19の一面に、ターゲット材23の構成材料からなる薄膜を形成することができる。 When an alternating current (AC) is applied to the targets 21 and 21, the Ar gas in the reaction chamber 11 becomes glow discharge plasma, and a large number of Ar + ions are generated. The large number of Ar + ions collide with the target material 23 of the target 21 connected to the cathode 13. The target material 23 is sputtered by the collision of Ar + , and particles (sputter particles) of the constituent material of the target material are deposited on the glass 19 placed on the anode 12. Thereby, a thin film made of the constituent material of the target material 23 can be formed on one surface of the glass 19.

 こうしたスパッタリングの際に、ターゲット21,21を、軸心方向Rを回転中心として所定の速度で回転させることにより、ターゲット材23が均一な厚みで減少するとともに、大面積のガラス19の一面全体に対して、均一な膜厚の薄膜を形成することができる。 During such sputtering, by rotating the targets 21 and 21 at a predetermined speed with the axial center direction R as the center of rotation, the target material 23 is reduced in uniform thickness, and the entire surface of the large-area glass 19 is applied. On the other hand, a thin film having a uniform thickness can be formed.

 (第一実施形態)
 図3は、本発明のターゲット取付機構を示す拡大斜視図である。また、図4は、本発明のターゲット取付機構を示す断面図である。
 ターゲット21の両端部で基体22が露呈した連結領域S2には、基体22の円周方向に沿って、第一の係合凸部61が形成される。第一の係合凸部61は、基材22の周面22aから外方に突出する突起であり、基体22の円周方向Qに沿って、例えば6箇所に均等に配置される。この第一の係合凸部61は、基体22と一体に形成されていればよい。
(First embodiment)
FIG. 3 is an enlarged perspective view showing the target mounting mechanism of the present invention. FIG. 4 is a cross-sectional view showing the target mounting mechanism of the present invention.
In the connection region S <b> 2 where the base body 22 is exposed at both ends of the target 21, first engaging convex portions 61 are formed along the circumferential direction of the base body 22. The first engaging protrusions 61 are protrusions that protrude outward from the peripheral surface 22 a of the base material 22, and are equally disposed at, for example, six locations along the circumferential direction Q of the base body 22. The first engaging convex portion 61 may be formed integrally with the base body 22.

 第一の係合凸部61は、基材22の周面22aから低い位置で突出する導入部61aと、この導入部61aから基体22の円周方向Qに沿って、周面22aから外方に離れる方向に傾斜する傾斜部61bと、この傾斜部61bに連なり、傾斜部61bよりも急角度(大きな角度)で、周面22aから外方に離れる方向に立ち上がる(傾斜する)係止部61cとからなる(図5Aの断面図も参照)。また、傾斜部61bは、導入部61aに連なる側から、係止部61cに連なる側に向けて、ターゲット21の軸心方向Rに沿って幅が広がる形状を成す。 The first engaging convex portion 61 has an introduction portion 61a that protrudes at a low position from the peripheral surface 22a of the base member 22 and outward from the peripheral surface 22a along the circumferential direction Q of the base body 22 from the introduction portion 61a. An inclined portion 61b that is inclined in a direction away from the engaging portion 61b, and a locking portion 61c that is connected to the inclined portion 61b and rises (inclines) outward from the peripheral surface 22a at a steeper angle (larger angle) than the inclined portion 61b. (See also the cross-sectional view of FIG. 5A). Further, the inclined portion 61b has a shape in which the width increases along the axial direction R of the target 21 from the side continuous with the introduction portion 61a toward the side continuous with the locking portion 61c.

 カソード(陰極)13の一端を成す連結部S3には、クランプ71が回転可能に取り付けられている。このクランプ71は、カソード13の連結部S3と、ターゲット21の連結領域S2とを内在させる、中空の略円筒形状に形成されている。即ち、ターゲット21は、中空の内径がカソード13の連結部S3やターゲット21の連結領域S2の直径と同じかそれよりも大きく形成され、ターゲット21の取付時には、これら連結部S3や連結領域S2を覆う形状を成す。 A clamp 71 is rotatably attached to the connecting portion S3 that forms one end of the cathode (cathode) 13. The clamp 71 is formed in a hollow, substantially cylindrical shape that internally includes the connecting portion S3 of the cathode 13 and the connecting region S2 of the target 21. That is, the target 21 is formed such that the hollow inner diameter is the same as or larger than the diameter of the connecting portion S3 of the cathode 13 and the connecting region S2 of the target 21, and when the target 21 is attached, the connecting portion S3 and the connecting region S2 are formed. Forms a covering shape.

 クランプ71の内周面71aには、このクランプ71の内周方向Dに沿って、第二の係合凸部72が形成される。第二の係合凸部72は、内周面71aからクランプ71の外側に向けて掘り下げられた所定幅の溝71bの両側面に支持された(固着された)円筒棒状の部材である。溝71bは、クランプ71の内周方向Dに沿って、例えば6箇所に均等に配置される。一方、第二の係合凸部72は、これら6箇所の溝71bのうち、1つおきに3箇所、均等に形成される。 A second engaging projection 72 is formed on the inner peripheral surface 71 a of the clamp 71 along the inner peripheral direction D of the clamp 71. The second engaging projections 72 are cylindrical rod-like members supported (fixed) on both side surfaces of a groove 71b having a predetermined width dug down from the inner peripheral surface 71a toward the outside of the clamp 71. The grooves 71b are evenly arranged at, for example, six locations along the inner circumferential direction D of the clamp 71. On the other hand, the second engaging projections 72 are equally formed at every other three of these six grooves 71b.

 溝71bは、第一の係合凸部61と第二の係合凸部72との係合時に、6箇所形成された第一の係合凸部61がこの溝71bと内周方向Dにおいて対面する。そして、6箇所の溝71bのうち、3箇所の溝71bに形成された第二の係合凸部72と、第一の係合凸部61とが摺動し、かつ当接することで、ターゲット21がクランプ71に固定される(ターゲット21とクランプ71との係合は後ほど述べる)。 The groove 71b has six first engagement protrusions 61 formed in the inner circumferential direction D when the first engagement protrusion 61 and the second engagement protrusion 72 are engaged. Face to face. And the second engagement convex part 72 and the first engagement convex part 61 formed in the three grooves 71b out of the six grooves 71b slide and come into contact with each other. 21 is fixed to the clamp 71 (engagement between the target 21 and the clamp 71 will be described later).

 クランプ71の一端側には、締付ネジ73とネジ穴74とからなる固定手段75が形成されている。この固定手段75は、クランプ71をターゲット21に係合させた際に、締付ネジ73を軸心方向Rに沿ってターゲット21に向けて締め付けることによって、クランプ71が内周方向Dに沿って緩むことがないよう固定される。 At one end side of the clamp 71, a fixing means 75 including a tightening screw 73 and a screw hole 74 is formed. When the clamp 71 is engaged with the target 21, the fixing means 75 tightens the clamping screw 73 along the axial direction R toward the target 21, so that the clamp 71 extends along the inner circumferential direction D. It is fixed so as not to loosen.

 軸心方向対して垂直に広がるカソード13の連結部S3と、クランプ71の内面との間に形成される隙間Tには、スペーサ76が更に設けられる。このスペーサ76は、中心にカソード13を貫通させる穴が設けられた円盤状の部材であり、例えば、ステンレス、アルミニウムなどから形成されていればよい。スペーサ76は、固定手段75を構成する締付ネジ73を締め付けた際に、その先端がカソード13の連結部S3に直接当接して傷つくことを防止する。 A spacer 76 is further provided in the gap T formed between the connecting portion S3 of the cathode 13 extending vertically with respect to the axial direction and the inner surface of the clamp 71. The spacer 76 is a disk-shaped member provided with a hole through which the cathode 13 passes in the center, and may be formed of, for example, stainless steel or aluminum. The spacer 76 prevents the tip of the spacer 76 from coming into direct contact with the connecting portion S3 of the cathode 13 and being damaged when the fastening screw 73 constituting the fixing means 75 is fastened.

 スペーサ76は表面処理が施されていることが好ましい。例えば、アルミニウムから形成されたスペーサ76の表面に、アルマイト皮膜を形成すればよい。また、例えば、アルミニウムから形成されたスペーサ76の表面に、マイクロクラック等の微細凹凸に富んだ硬質アルマイト膜を形成し、更に微小なフッ素樹脂を複合した皮膜が形成されていればよい。 The spacer 76 is preferably subjected to a surface treatment. For example, an alumite film may be formed on the surface of the spacer 76 formed from aluminum. Further, for example, a hard alumite film rich in fine irregularities such as microcracks may be formed on the surface of the spacer 76 made of aluminum, and a film in which a fine fluorine resin is combined may be formed.

 また、例えば、鉄、ステンレス、銅合金などから形成したスペーサ76の表面に、無電解ニッケルとフッ素樹脂を処理液中で共析させ、皮膜中にフッ素樹脂を容積比に対し30%程度均一に含ませ、成膜後に熱処理を行い、無電解ニッケルとフッ素樹脂を強固に密着させた皮膜を形成してもよい。 Further, for example, electroless nickel and fluororesin are co-deposited in the treatment liquid on the surface of the spacer 76 formed of iron, stainless steel, copper alloy, etc., and the fluororesin is uniformly distributed in the film by about 30% with respect to the volume ratio. It may be included, and heat treatment may be performed after the film formation to form a film in which the electroless nickel and the fluororesin are firmly adhered.

 更に、例えば、鉄、ステンレス、銅合金などから形成したスペーサ76の表面に、無電解ニッケルをベースとし、この粒子状に析出させた無電解ニッケルにフッ素樹脂を複合させた表面処理を行って皮膜を形成してもよい。
 このように、スペーサ76の表面処理を行うことによって、スペーサ76の耐摩耗性向上、摺動性向上、かじり防止等を実現することができる。
Further, for example, the surface of the spacer 76 formed of iron, stainless steel, copper alloy, or the like is subjected to a surface treatment in which a fluorine resin is combined with the electroless nickel deposited in the form of particles on the base. May be formed.
As described above, by performing the surface treatment of the spacer 76, it is possible to realize improvement in wear resistance, improvement in sliding property, prevention of galling, and the like of the spacer 76.

 カソード13の連結部S3の端部には、ガスケットリング77が形成されている。このガスケットリング77は、例えばアルミニウムや銅合金などから形成され、ターゲット21の基材22の端部に当接することによって、基材22の中空な内部を気密に保つ。 A gasket ring 77 is formed at the end of the connecting portion S3 of the cathode 13. The gasket ring 77 is made of, for example, aluminum or copper alloy, and keeps the hollow interior of the base material 22 airtight by contacting the end of the base material 22 of the target 21.

 このような構成の本発明のターゲット取付機構の作用を説明する。
 本実施形態のターゲット取付機構によってスパッタリング装置10のカソード13に円筒形のターゲット21を取付ける際には、図5Aに示すように、ターゲット21の基材22が露出した連結領域S2に、カソード13の連結部S3に形成されたクランプ71を接近させる。そして、クランプ71の内部に基材22の連結領域S2を挿入する。
The operation of the target mounting mechanism of the present invention having such a configuration will be described.
When the cylindrical target 21 is attached to the cathode 13 of the sputtering apparatus 10 by the target mounting mechanism of the present embodiment, as shown in FIG. 5A, the cathode 13 is connected to the connection region S2 where the base material 22 of the target 21 is exposed. The clamp 71 formed in the connecting portion S3 is moved closer. Then, the connection region S <b> 2 of the base material 22 is inserted into the clamp 71.

 基材22の連結領域S2をクランプ71の内部に挿入したら、次に、図5Bに示すように、クランプ71を軸心方向R周りで、ターゲット21の円周方向Qに沿ってのみ回転させる。クランプ71を円周方向Qに沿ってのみ回し始めると、3箇所の溝71bに形成された第二の係合凸部72は、第一の係合凸部61の導入部61aと内周面71aの径方向において重なる。この状態では、導入部61aの周面22aからの高さが低いため、第二の係合凸部72と第一の係合凸部61とは殆ど接しない。 After the connection region S2 of the base material 22 is inserted into the clamp 71, the clamp 71 is then rotated around the axial direction R only along the circumferential direction Q of the target 21, as shown in FIG. 5B. When the clamp 71 starts to rotate only along the circumferential direction Q, the second engaging convex portions 72 formed in the three grooves 71b are connected to the introduction portion 61a of the first engaging convex portion 61 and the inner peripheral surface. It overlaps in the radial direction of 71a. In this state, since the height from the peripheral surface 22a of the introduction part 61a is low, the second engagement convex part 72 and the first engagement convex part 61 hardly contact each other.

 図5C~図5Eに示すように、更に、クランプ71をターゲット21の円周方向Qに沿ってのみ回転させると、第二の係合凸部72が、クランプ71の回転方向に向けて徐々に高くなるように傾斜する傾斜部61bに当接する。そして、第二の係合凸部72は、側面から見たときに、ちょうど傾斜部61bを登っていくように摺動する。 As shown in FIGS. 5C to 5E, when the clamp 71 is further rotated only along the circumferential direction Q of the target 21, the second engaging convex portion 72 gradually moves toward the rotation direction of the clamp 71. It abuts on the inclined portion 61b which is inclined so as to be higher. And the 2nd engagement convex part 72 slides so that it may just climb the inclination part 61b, when it sees from a side surface.

 クランプ71がターゲット21の円周方向Qに沿ってのみ回転し、傾斜部61bを摺動していく際に、傾斜部61bが導入部61aに連なる側から、係止部61cに連なる側に向けて、ターゲット21の軸心方向Rに沿って幅が広がる形状を成しているので、第二の係合凸部72と第一の係合凸部61とは、徐々に接触面積が増加していく。なお、第二の係合凸部72が円柱状に形成されているため、クランプ71はターゲット21の円周方向Qに沿ってスムーズに回転する。 When the clamp 71 rotates only along the circumferential direction Q of the target 21 and slides on the inclined portion 61b, the inclined portion 61b is directed from the side connected to the introducing portion 61a to the side connected to the locking portion 61c. Since the width of the target 21 increases along the axial direction R of the target 21, the contact area between the second engagement convex portion 72 and the first engagement convex portion 61 gradually increases. To go. In addition, since the 2nd engagement convex part 72 is formed in the column shape, the clamp 71 rotates smoothly along the circumferential direction Q of the target 21.

 クランプ71を更に回転させると、第二の係合凸部72は傾斜部61bを登りきった後、傾斜部61bよりも急角度で立ち上がる係止部61cに当接する。そして、これ以上の円周方向Qに沿った回転は抑止される。これによって、ターゲット21はクランプ71に対して係合される。こうした係合状態においては、第一の係合凸部61と第二の係合凸部72との接触面Bは、ターゲット21の円周方向Qが短手、ターゲット21の軸心方向(軸方向)Rが長手を成す、細長い長方形を成す。 When the clamp 71 is further rotated, the second engaging convex part 72 comes into contact with the engaging part 61c that rises at a steeper angle than the inclined part 61b after climbing the inclined part 61b. Further, further rotation along the circumferential direction Q is suppressed. As a result, the target 21 is engaged with the clamp 71. In such an engagement state, the contact surface B between the first engagement convex portion 61 and the second engagement convex portion 72 is short in the circumferential direction Q of the target 21, and the axial direction (axis of the target 21) (Direction) R is a long and narrow rectangle.

 こうした第一の係合凸部61と第二の係合凸部72との接触面を小さく抑えることにより、クランプ71の内部にターゲット21の連結領域S2を挿入してから、クランプ71をターゲット21の円周方向Qに沿ってのみ回転させて、第二の係合凸部72が係止部61cに当接するまでに必要な回転トルクは、1(kgf・cm)以上、20(kgf・cm)以下となる。これによって、例えば、作業者がクランプ71を、専用工具などを用いずに手によって軽く回転させるだけで、ターゲット21をクランプ71に係合させることが可能になる。 By suppressing the contact surface between the first engagement protrusion 61 and the second engagement protrusion 72 to be small, the connection region S2 of the target 21 is inserted into the clamp 71, and then the clamp 71 is moved to the target 21. The rotational torque required to rotate only along the circumferential direction Q and until the second engaging convex portion 72 abuts on the locking portion 61c is 1 (kgf · cm) or more and 20 (kgf · cm). ) As a result, for example, the operator can engage the target 21 with the clamp 71 only by lightly rotating the clamp 71 by hand without using a dedicated tool or the like.

 一方、第二の係合凸部72は傾斜部61bを登りきって係止部61cに当接する際に、第一の係合凸部61と第二の係合凸部72との係合動作が完了したことを判別する信号を発する構造であればよい。例えば、こうした信号は音であればよい。この実施形態では、第二の係合凸部72が第一の係合凸部61の係止部61cに突き当たった際に発する接触音が出る構造とすることで、クランプ71を所定の係合位置まで回転させたことを知覚することができる。これによって、クランプ71の回転不足等による係合不良を防止することができる。 On the other hand, when the second engaging convex portion 72 climbs up the inclined portion 61b and contacts the locking portion 61c, the engaging operation between the first engaging convex portion 61 and the second engaging convex portion 72 is performed. Any structure may be used as long as it generates a signal for determining that the process has been completed. For example, such a signal may be a sound. In this embodiment, the clamp 71 is set to a predetermined engagement by having a structure in which a contact sound is emitted when the second engaging convex portion 72 hits the locking portion 61c of the first engaging convex portion 61. It can be perceived that it has been rotated to a position. Thereby, poor engagement due to insufficient rotation of the clamp 71 can be prevented.

 この後、図4に示す固定手段75の締付ネジ73を軸心方向Rに沿ってターゲット21に向けて締め付けることによって、カソード13がターゲット21に向けて押され、第一の係合凸部61と溝71bとが密着し、クランプ71がターゲット21に対して容易に回転することがない。このため、第一の係合凸部61と第二の係合凸部72との係合(接触)状態が維持される。 Thereafter, by tightening the fastening screw 73 of the fixing means 75 shown in FIG. 4 toward the target 21 along the axial direction R, the cathode 13 is pushed toward the target 21, and the first engaging convex portion 61 and the groove 71b are in close contact with each other, and the clamp 71 does not easily rotate with respect to the target 21. For this reason, the engagement (contact) state of the 1st engagement convex part 61 and the 2nd engagement convex part 72 is maintained.

 以上のように、本実施形態のターゲット取付機構によれば、スパッタリング装置10のカソード13に円筒形のターゲット21を取付ける際に、カソード13に形成されたクランプ71をターゲット21の端部の連結領域S2に挿入してから回転させ、第一の係合凸部61と第二の係合凸部72とを係合させるだけで、円筒形のターゲット21をカソード13に取り付けることができる。 As described above, according to the target mounting mechanism of the present embodiment, when the cylindrical target 21 is attached to the cathode 13 of the sputtering apparatus 10, the clamp 71 formed on the cathode 13 is connected to the end region of the target 21. The cylindrical target 21 can be attached to the cathode 13 by simply inserting the first engaging convex portion 61 and the second engaging convex portion 72 into engagement after being inserted into S2.

 また、例えば、長さが数メートルなど大型のターゲットを用いる場合であっても、ターゲット21の取り付けの際に、クランプ71を円周方向に沿ってのみ回転させて第二の係合凸部72と第一の係合凸部61とを係合させるだけで、ターゲット21をカソード13に取り付けることができる。このため、従来のように専用工具を用いてクランプを大きな力で回転させるなどの必要がなく、専用工具を用いずとも小さな力で、例えば、クランプ71の回転トルクが1(kgf・cm)以上、20(kgf・cm)以下の範囲で回すだけで容易にターゲット21をカソード13に取り付けることが可能になる。 Further, for example, even when a large target having a length of several meters or the like is used, when the target 21 is attached, the clamp 71 is rotated only along the circumferential direction so that the second engagement convex portion 72 is obtained. The target 21 can be attached to the cathode 13 simply by engaging the first engaging convex portion 61 with the first engaging convex portion 61. For this reason, there is no need to rotate the clamp with a large force using a dedicated tool as in the prior art. For example, the rotational torque of the clamp 71 is 1 (kgf · cm) or more with a small force without using a dedicated tool. , The target 21 can be easily attached to the cathode 13 simply by turning within a range of 20 (kgf · cm) or less.

 上述した実施形態では、第二の係合凸部72は、6箇所の溝71bのうち、1つおきに3箇所、均等に形成されている。即ち、図6Aに示すように、第二の係合凸部72は3つ形成され、クランプ71の内周面71a方向の同一線P1上にあり、ターゲット21の回転軸、即ち軸心方向Rを中心と見なした仮想円P2上にもあり、かつこの中心と第二の係合凸部72とを通る線分Lに対して軸対称に配置されている。 In the above-described embodiment, the second engagement protrusions 72 are equally formed at every other three positions among the six grooves 71b. That is, as shown in FIG. 6A, three second engaging convex portions 72 are formed and are on the same line P1 in the direction of the inner peripheral surface 71a of the clamp 71, and the rotation axis of the target 21, that is, the axial direction R Is located on a virtual circle P2 that is regarded as the center, and is arranged symmetrically with respect to a line segment L that passes through the center and the second engaging convex portion 72.

 こうした構成によって、第一の係合凸部61と第二の係合凸部72とを係合させた際に、ターゲット21の回転軸と、クランプ71の内周面71aにおける軸心とを正確に一致させることが可能になる。したがって、成膜時において、ターゲット21が偏心して回転することがなく、エロージョンパターンが均一に形成され、ターゲット21の寿命を高めることが可能になる。 With such a configuration, when the first engaging convex portion 61 and the second engaging convex portion 72 are engaged, the rotational axis of the target 21 and the axis of the inner peripheral surface 71a of the clamp 71 are accurately set. It becomes possible to match. Therefore, the target 21 does not rotate eccentrically during film formation, and the erosion pattern is uniformly formed, and the life of the target 21 can be increased.

 第二の係合凸部は、図6Bに示すように、同一線P1上にあり、かつ仮想円P2上にもあり、かつこの中心と第二の係合凸部81とを通る線分Lに対して軸対称になるように4箇所配置されていてもよい。また、例えば、図6Cに示すように、同一線P1上にあり、かつ仮想円P2上にもあり、かつこの中心と第二の係合凸部82とを通る線分Lに対して軸対称になるように5箇所配置されていてもよい。 As shown in FIG. 6B, the second engagement convex portion is on the same line P1 and also on the virtual circle P2, and the line segment L passing through the center and the second engagement convex portion 81 is provided. The four positions may be arranged so as to be axially symmetric. Further, for example, as shown in FIG. 6C, the axis is symmetrical with respect to a line segment L that is on the same line P1 and also on the virtual circle P2 and that passes through the center and the second engagement convex part 82 Five locations may be arranged so that

 このため、第一の係合凸部61と第二の係合凸部72との係合によって、カソード13の中心とターゲット21の軸心とを容易に一致させることができ、ターゲット21を、軸心を回転中心として偏心することなく回転させることができる。これによって、被成膜物とターゲット21との距離が、ターゲット21の全周に渡って均一となり、ムラのない均一な厚みの皮膜を被成膜物の全面に渡って成膜することが可能になる。 For this reason, the center of the cathode 13 and the axis of the target 21 can be easily matched by the engagement of the first engaging convex portion 61 and the second engaging convex portion 72, The shaft center can be rotated without being decentered. As a result, the distance between the film formation target and the target 21 is uniform over the entire circumference of the target 21, and a film having a uniform thickness with no unevenness can be formed over the entire surface of the film formation target. become.

 なお、上述した実施形態では、ターゲット21に対してクランプ71を円周方向Qに沿ってのみ回転させて係合しているが、第一の係合凸部と第二の係合凸部とは、ターゲットの円周方向に沿ってのみ相対移動して係合させればよい。即ち、クランプに代えてターゲットを回動させたり、あるいは、ターゲットとクランプの双方を、円周方向において互いに異なる向きに回動させて、第一の係合凸部と第二の係合凸部とを係合させたりする構成であってもよい。 In the above-described embodiment, the clamp 71 is rotated and engaged with the target 21 only along the circumferential direction Q. However, the first engagement convex portion and the second engagement convex portion are Need only be relatively moved and engaged along the circumferential direction of the target. That is, the first engaging convex portion and the second engaging convex portion are rotated by rotating the target instead of the clamp, or by rotating both the target and the clamp in different directions in the circumferential direction. Or may be configured to engage with each other.

 (第二実施形態)
 図7は、本発明のターゲット取付機構の別な実施形態を示す拡大斜視図である。また、図8は、同ターゲット取付機構の断面図である。
 この実施形態では、ターゲット21の両端部で基体22が露呈した連結領域S2には、基体22の円周方向に沿って、第一の係合凸部31が形成される。第一の係合凸部31は、基材22の周面22aから外方に突出する突起であり、基体22の円周方向に沿って、例えば6箇所に均等に配置される。この第一の係合凸部31は、基体22と一体に形成されていればよい。
(Second embodiment)
FIG. 7 is an enlarged perspective view showing another embodiment of the target mounting mechanism of the present invention. FIG. 8 is a cross-sectional view of the target mounting mechanism.
In this embodiment, the first engagement convex portion 31 is formed along the circumferential direction of the base body 22 in the connection region S <b> 2 where the base body 22 is exposed at both ends of the target 21. The first engagement protrusions 31 are protrusions that protrude outward from the peripheral surface 22 a of the base material 22, and are equally disposed at, for example, six locations along the circumferential direction of the base body 22. The first engagement protrusion 31 only needs to be formed integrally with the base body 22.

 第一の係合凸部31は、図9Aに示すように、例えば、平面視略L字型に形成される。こうした第一の係合凸部31は、ターゲット21の軸心方向Rに沿って延びる第一の係合手段E1と、ターゲット21の円周方向Qに沿って延びる第二の係合手段E2と、ターゲット21の円周方向Qに略直角な方向に配された第三の係合手段E3とを備えている。 As shown in FIG. 9A, the first engagement convex portion 31 is formed in, for example, a substantially L shape in plan view. The first engagement convex portion 31 includes a first engagement means E1 extending along the axial direction R of the target 21 and a second engagement means E2 extending along the circumferential direction Q of the target 21. And third engaging means E3 arranged in a direction substantially perpendicular to the circumferential direction Q of the target 21.

 カソード(陰極)13の一端を成す連結部S3には、クランプ41が回転可能に取り付けられている。このクランプ41は、カソード13の連結部S3と、ターゲット21の連結領域S2とを内在させる、中空の略円筒形状に形成されている。即ち、ターゲット21は、中空の内径がカソード13の連結部S3やターゲット21の連結領域S2の直径と同じかそれよりも大きく形成され、ターゲット21の取付時には、これら連結部S3や連結領域S2を覆う形状を成す。 A clamp 41 is rotatably attached to the connecting portion S3 that forms one end of the cathode (cathode) 13. The clamp 41 is formed in a hollow, substantially cylindrical shape that includes the connecting portion S3 of the cathode 13 and the connecting region S2 of the target 21. That is, the target 21 is formed such that the hollow inner diameter is the same as or larger than the diameter of the connecting portion S3 of the cathode 13 and the connecting region S2 of the target 21, and when the target 21 is attached, the connecting portion S3 and the connecting region S2 are formed. Forms a covering shape.

 クランプ41の内周面41aには、内周方向Dに沿って、第二の係合凸部42が形成される。第二の係合凸部42は、内周面41aから中心方向に突出する突起であり、内周方向Dに沿って、例えば6箇所に均等に配置される。この第二の係合凸部42は、クランプ41と一体に形成されていればよい。 A second engagement convex portion 42 is formed along the inner circumferential direction D on the inner circumferential surface 41 a of the clamp 41. The second engagement protrusions 42 are protrusions that protrude in the center direction from the inner peripheral surface 41 a, and are equally disposed along, for example, six locations along the inner peripheral direction D. The second engaging convex part 42 only needs to be formed integrally with the clamp 41.

 第二の係合凸部42は、図9Aに示すように、例えば、平面視略矩形に形成される。こうした第二の係合凸部42は、内周方向Dに沿った幅Wが、互いに隣接する第一の係合凸部31どうしの間隔と同じか、それよりも小さくなるように形成されていればよい。
 こうした構成により、第一の係合凸部31と第二の係合凸部42とは、ターゲット21の取付時に、互いに係合可能に配置される。
As shown in FIG. 9A, the second engagement convex portion 42 is formed, for example, in a substantially rectangular shape in plan view. The second engagement protrusions 42 are formed such that the width W along the inner circumferential direction D is the same as or smaller than the interval between the first engagement protrusions 31 adjacent to each other. Just do it.
With such a configuration, the first engaging convex portion 31 and the second engaging convex portion 42 are arranged to be able to engage with each other when the target 21 is attached.

 クランプ41の一端側には、締付ネジ43とネジ穴44とからなる固定手段45が形成されている。この固定手段45は、クランプ41をターゲット21に係合させた際に、締付ネジ43を軸心方向Rに沿ってターゲット21に向けて締め付けることによって、第一の係合凸部31と第二の係合凸部42とを密着させることができる。 A fixing means 45 including a fastening screw 43 and a screw hole 44 is formed on one end side of the clamp 41. When the clamp 41 is engaged with the target 21, the fixing means 45 tightens the tightening screw 43 along the axial direction R toward the target 21, so that The second engaging convex portion 42 can be brought into close contact.

 カソード13の連結部S3における軸心方向対して垂直に延在する部分と、クランプ41の内面との間に形成される隙間Tには、スペーサ46が更に設けられる。このスペーサ46は、中心にカソード13を貫通させる穴が設けられた円盤状の部材であり、例えば、ステンレスから形成されていればよい。こうしたスペーサ46は、固定手段45を構成する締付ネジ43を締め付けた際に、その先端がカソード13の連結部S3に直接当接して傷つくことを防止する。 A spacer 46 is further provided in the gap T formed between the portion extending perpendicularly to the axial direction in the connecting portion S3 of the cathode 13 and the inner surface of the clamp 41. The spacer 46 is a disk-shaped member provided with a hole through which the cathode 13 penetrates in the center, and may be made of, for example, stainless steel. Such a spacer 46 prevents the tip of the spacer 46 from coming into direct contact with the connecting portion S3 of the cathode 13 and being damaged when the fastening screw 43 constituting the fixing means 45 is fastened.

 カソード13の連結部S3の端部には、ガスケットリング47が形成されている。このガスケットリング47は、例えばアルミニウムなどから形成され、ターゲット21の基材22の端部に当接することによって、基材22の中空な内部を気密に保つ。 A gasket ring 47 is formed at the end of the connecting portion S3 of the cathode 13. The gasket ring 47 is made of, for example, aluminum, and keeps the hollow interior of the base material 22 airtight by contacting the end of the base material 22 of the target 21.

 このような構成を有する本実施形態のターゲット取付機構の作用を説明する。
 本実施形態のターゲット取付機構によってスパッタリング装置10のカソード13に円筒形のターゲット21を取付ける際には、図9Aに示すように、ターゲット21の基材22が露出した連結領域S2に、カソード13の連結部S3に形成されたクランプ41を接近させる。そして、クランプ41に形成されたそれぞれの第二の係合凸部42が、基材22に形成された第一の係合凸部31どうしの間を通るように位置合わせしてから、クランプ41の内面に基材22の連結領域S2を挿入する。
The operation of the target mounting mechanism of the present embodiment having such a configuration will be described.
When the cylindrical target 21 is attached to the cathode 13 of the sputtering apparatus 10 by the target mounting mechanism of the present embodiment, as shown in FIG. 9A, the cathode 13 is connected to the connection region S2 where the base material 22 of the target 21 is exposed. The clamp 41 formed in the connecting portion S3 is brought closer. Then, the respective second engagement convex portions 42 formed on the clamp 41 are aligned so as to pass between the first engagement convex portions 31 formed on the base member 22, and then the clamp 41. The connection region S2 of the base material 22 is inserted into the inner surface of.

 この挿入時においては、第一の係合凸部31を構成する第一の係合手段E1と、第二の係合凸部42の一面L1とが、軸心方向Rに沿って摺動しつつ、基材22の連結領域S2がクランプ41の内部に挿入される。 At the time of this insertion, the first engaging means E1 constituting the first engaging convex portion 31 and the one surface L1 of the second engaging convex portion 42 slide along the axial direction R. Meanwhile, the connection region S <b> 2 of the base material 22 is inserted into the clamp 41.

 図9Bに示すように、クランプ41をターゲット21の円周方向Qに沿ってのみ回転させ、第二の係合凸部42の一面L1と、第一の係合手段E1とが、円周方向Qにおいて重ならない位置まで挿入したら、次に、図9Cに示すように、クランプ41をターゲット21の円周方向Qに沿って回転させる。この回転時においては、第一の係合凸部31を構成する第二の係合手段E2と、第二の係合凸部42の他面L2とが、円周方向Qに沿って摺動しつつクランプ41が回転する。 As shown in FIG. 9B, the clamp 41 is rotated only along the circumferential direction Q of the target 21, and the one surface L1 of the second engagement convex portion 42 and the first engagement means E1 are in the circumferential direction. After inserting up to a position that does not overlap in Q, next, the clamp 41 is rotated along the circumferential direction Q of the target 21, as shown in FIG. 9C. During this rotation, the second engagement means E2 constituting the first engagement protrusion 31 and the other surface L2 of the second engagement protrusion 42 slide along the circumferential direction Q. While doing this, the clamp 41 rotates.

 クランプ41が所定量回転されると、第二の係合凸部42の一面L1が、第一の係合凸部31を構成する第三の係合手段E3に当接する。この第三の係合手段E3と第二の係合凸部42との当接によって、クランプ41の円周方向に沿った回転が抑止される。 When the clamp 41 is rotated by a predetermined amount, one surface L1 of the second engagement convex portion 42 comes into contact with the third engagement means E3 constituting the first engagement convex portion 31. The contact of the third engagement means E3 and the second engagement convex portion 42 prevents the clamp 41 from rotating along the circumferential direction.

 この後、図8に示す固定手段45の締付ネジ43を軸心方向Rに沿ってターゲット21に向けて締め付けることによって、第一の係合凸部31と第二の係合凸部42とが密着し、クランプ41がターゲット21に対して容易に回転することがない。 Thereafter, by tightening the fastening screw 43 of the fixing means 45 shown in FIG. 8 toward the target 21 along the axial direction R, the first engaging convex portion 31 and the second engaging convex portion 42 And the clamp 41 does not easily rotate with respect to the target 21.

 10…スパッタリング装置
 12…アノード
 13…カソード
 21…ターゲット
 22…基体
 23…ターゲット材
 61…第一の係合凸部
 71…クランプ
 72…第二の係合凸部
DESCRIPTION OF SYMBOLS 10 ... Sputtering device 12 ... Anode 13 ... Cathode 21 ... Target 22 ... Base | substrate 23 ... Target material 61 ... 1st engagement convex part 71 ... Clamp 72 ... 2nd engagement convex part

Claims (9)

 スパッタリング装置において用いられる円筒形のターゲットをカソードの連結部に対して着脱可能に取り付けるターゲット取付機構であって、
 前記ターゲットが、円筒形の基体と、この基体を覆うターゲット材とを備えるとともに、前記ターゲット材が配された中央領域と、この中央領域を除く両端側で前記基体が露出する連結領域と、を有し;
 前記カソードの連結部に、この連結部と前記連結領域とを内在させる略円筒形のクランプが形成され;
 前記ターゲットの前記連結領域に形成される第一の係合凸部と、前記クランプの内周面に形成される第二の係合凸部とが、前記連結部及び前記連結領域が前記クランプに内在した状態で、前記ターゲットの円周方向に沿ってのみ相対移動することにより、係合されている;
ことを特徴とするターゲット取付機構。
A target mounting mechanism for detachably mounting a cylindrical target used in a sputtering apparatus to a connecting portion of a cathode,
The target includes a cylindrical base body and a target material covering the base body, a central region where the target material is disposed, and a connection region where the base body is exposed at both ends excluding the central region. Have;
A substantially cylindrical clamp is formed in the connecting portion of the cathode, and the connecting portion and the connecting region are formed inside;
A first engagement convex portion formed on the connection region of the target and a second engagement convex portion formed on an inner peripheral surface of the clamp include the connection portion and the connection region serving as the clamp. Engaged by being relatively moved only along the circumferential direction of the target in an indwelling state;
A target mounting mechanism characterized by that.
 前記第一の係合凸部と前記第二の係合凸部との係合に必要とされるトルクが、1(kgf・cm)以上、20(kgf・cm)以下であることを特徴とする請求項1に記載のターゲット取付機構。 The torque required for the engagement between the first engagement convex portion and the second engagement convex portion is 1 (kgf · cm) or more and 20 (kgf · cm) or less. The target mounting mechanism according to claim 1.  前記第一の係合凸部と前記第二の係合凸部との接触面が、前記ターゲットの円周方向が短手、前記ターゲットの軸方向が長手を成す形状であることを特徴とする請求項1に記載のターゲット取付機構。 The contact surface between the first engagement convex portion and the second engagement convex portion has a shape in which the circumferential direction of the target is short and the axial direction of the target is long. The target mounting mechanism according to claim 1.  前記第一の係合凸部と前記第二の係合凸部との係合動作が完了したことを判別する信号を発する構造を備えることを特徴とする請求項1に記載のターゲット取付機構。 2. The target mounting mechanism according to claim 1, further comprising a structure for generating a signal for determining that the engagement operation between the first engagement convex portion and the second engagement convex portion is completed.  前記第二の係合凸部が3つ以上形成され、前記クランプの内周面方向の同一線上にあり、前記ターゲットの回転軸を中心と見なした仮想円上にもあり、かつ前記中心と、前記第二の係合凸部のうち少なくとも一つとを通る線分に対して、それ以外の前記第二の係合凸部が軸対称に配置されていることを特徴とする請求項1に記載のターゲット取付機構。 Three or more of the second engaging convex portions are formed, are on the same line in the inner peripheral surface direction of the clamp, are on a virtual circle with the rotation axis of the target as the center, and the center The other second engaging convex portions are axially symmetrical with respect to a line segment passing through at least one of the second engaging convex portions. The target mounting mechanism described.  前記カソードの前記連結部における軸心に対して垂直に延在する部分と、前記基体との接触部分とに設けられたガスケットリングを更に備えることを特徴とする請求項1に記載のターゲット取付機構。 The target mounting mechanism according to claim 1, further comprising a gasket ring provided at a portion extending perpendicularly to the axis of the connecting portion of the cathode and a contact portion with the base. .  前記カソードの前記連結部における軸心に対して垂直に延在する部分と、前記基体とを密着させる固定手段を更に備えることを特徴とする請求項1に記載のターゲット取付機構。 2. The target mounting mechanism according to claim 1, further comprising a fixing means for closely contacting a portion of the connecting portion of the cathode that extends perpendicularly to an axial center with the base.  前記カソードの前記連結部における軸心に対して垂直に延在する部分と、前記クランプとの隙間に配置されたスペーサを更に備えることを特徴とする請求項1に記載のターゲット取付機構。 2. The target mounting mechanism according to claim 1, further comprising a spacer disposed in a gap between the portion of the cathode that extends perpendicular to the axial center of the connecting portion and the clamp.  前記スペーサに、表面処理が施されていることを特徴とする請求項8に記載のターゲット取付機構。 The target mounting mechanism according to claim 8, wherein the spacer is subjected to a surface treatment.
PCT/JP2011/064801 2010-06-28 2011-06-28 Target mounting mechanism Ceased WO2012002383A1 (en)

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TWI498437B (en) 2015-09-01
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