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WO2012077592A1 - Tampon à polir chimico-mécanique et son procédé d'utilisation - Google Patents

Tampon à polir chimico-mécanique et son procédé d'utilisation Download PDF

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Publication number
WO2012077592A1
WO2012077592A1 PCT/JP2011/077904 JP2011077904W WO2012077592A1 WO 2012077592 A1 WO2012077592 A1 WO 2012077592A1 JP 2011077904 W JP2011077904 W JP 2011077904W WO 2012077592 A1 WO2012077592 A1 WO 2012077592A1
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WIPO (PCT)
Prior art keywords
polishing
layer
chemical mechanical
polishing layer
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/077904
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English (en)
Japanese (ja)
Inventor
亜耶子 前川
理 加茂
直希 西口
裕貴 仕田
岡本　隆浩
光太郎 久保
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JSR Corp
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JSR Corp
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Publication date
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Priority to KR1020137014494A priority Critical patent/KR20130124331A/ko
Priority to JP2012547822A priority patent/JPWO2012077592A1/ja
Priority to US13/992,554 priority patent/US20130316621A1/en
Publication of WO2012077592A1 publication Critical patent/WO2012077592A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H10P52/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure

Definitions

  • the present invention relates to a chemical mechanical polishing pad and a chemical mechanical polishing method using the chemical mechanical polishing pad.
  • polishing pad for polishing glass or semiconductor elements a porous non-woven fabric or a polyurethane molded product obtained by impregnating a non-woven fabric with a polyurethane solution has been used.
  • a chemical mechanical polishing pad suitable for chemical mechanical polishing hereinafter also referred to as "CMP" for planarizing the surface of a semiconductor substrate
  • CMP chemical mechanical polishing pad suitable for chemical mechanical polishing
  • JP-A-8-500622 discloses a polishing pad in which a filler-like component is dispersed in polyurethane
  • JP-A-2000-17252 and JP 3956364 consider a polishing pad using foamed polyurethane and the like. There is.
  • polishing pad When CMP is performed using such a polishing pad, frictional heat is generated when the surface to be polished such as the wafer surface rubs against the surface of the polishing pad, and the temperature of the surface of the polishing pad may locally rise. there were. Such a local temperature rise of the surface of the polishing pad changes the polishing characteristics of the polishing pad, which may cause flatness defects, polishing defects (scratches) and the like of the surface to be polished. In addition, when the frictional heat is accumulated in the polishing pad due to the long-term CMP and the temperature rise continues, the polishing characteristics of the entire polishing pad may be changed.
  • foamed polyurethane which is currently widely used as a raw material for polishing pads, is a material that has a low thermal conductivity due to its foamed structure and is also used as a heat insulating material for housing.
  • the polishing pad made of the foamed polyurethane having such properties the (1) frictional heat causes the local temperature rise on the surface of the polishing pad to lower the polishing characteristics, (2) the frictional heat is dissipated Since it is difficult, the temperature of the whole polishing pad rises by long-time CMP, and problems such as changing the polishing characteristics are remarkable.
  • some aspects according to the present invention can achieve both the improvement of the flatness of the surface to be polished and the reduction of polishing defects (scratch) by solving the above-mentioned problems, and also for a long time.
  • the present invention provides a chemical mechanical polishing pad capable of maintaining stable polishing characteristics even in continuous CMP, and a chemical mechanical polishing method using the chemical mechanical polishing pad.
  • the present invention has been made to solve at least a part of the problems described above, and can be realized as the following aspects or application examples.
  • One aspect of the chemical mechanical polishing pad according to the present invention is Having an abrasive layer formed from a composition containing polyurethane,
  • the specific gravity of the polishing layer is 1.1 or more and 1.3 or less, and the thermal conductivity of the polishing layer is 0.2 [W / m ⁇ K] or more.
  • Application Example 2 In the chemical mechanical polishing pad of Application Example 1, It has a laminate in which a support layer is formed on one side of the polishing layer, The thermal conductivity of the laminate may be 0.2 [W / m ⁇ K] or more.
  • the residual strain at the time of tension of the polishing layer can be 2% or more and 10% or less.
  • the volume change rate may be 0.8% or more and 5.0% or less when the polishing layer is immersed in water at 23 ° C. for 24 hours.
  • the compression ratio of the support layer may be 5% or more.
  • the polyurethane can be a thermoplastic polyurethane.
  • composition may further comprise water soluble particles.
  • Application Example 8 One aspect of the chemical mechanical polishing method according to the present invention is Chemical mechanical polishing is characterized by using the chemical mechanical polishing pad according to any one of application examples 1 to 7.
  • the chemical mechanical polishing pad according to the present invention has both the improvement of the flatness of the surface to be polished and the reduction of polishing defects (scratch) by providing the polishing layer having specific gravity and thermal conductivity within a specific range. It is possible to maintain stable polishing characteristics even in CMP over a long time.
  • FIG. 1 is a schematic view for explaining the concept of residual strain when the polishing layer is pulled.
  • FIG. 2A is an enlarged view of region I in FIG.
  • FIG. 2B is an enlarged view of region I in FIG.
  • FIG. 2C is an enlarged view of region I in FIG.
  • FIG. 2D is an enlarged view of region I in FIG.
  • FIG. 2E is an enlarged view of region I in FIG.
  • FIG. 3A is a schematic view for explaining the concept of the volume change rate in the polishing layer.
  • FIG. 3B is a schematic view for explaining the concept of the volume change rate in the polishing layer.
  • FIG. 4A is a schematic view for explaining the concept of Duro D hardness in the polishing layer.
  • FIG. 4B is a schematic view for explaining the concept of Duro D hardness in the polishing layer.
  • FIG. 5A is a schematic view for explaining the concept of surface hardness in the polishing layer.
  • FIG. 5B is a schematic view for explaining the concept of surface hardness in the polishing layer.
  • the “wet state” refers to a state in which the polishing layer is immersed in water at 23 ° C. for 4 hours or more.
  • the term “hardness” simply refers to Duro D hardness
  • the term “surface hardness” refers to universal hardness [HU: N / mm 2 ].
  • the surface hardness of the polishing layer in the wet state is represented by universal hardness [HU: N / mm 2 ] when a constant pressure is applied, as also shown in the examples described later.
  • the configuration of the chemical mechanical polishing pad according to the present embodiment is not particularly limited as long as at least one surface is provided with a polishing layer.
  • the specific gravity of the polishing layer is 1.1 or more and 1.3 or less, and the thermal conductivity is 0.2 [W / m ⁇ K] or more.
  • the chemical mechanical polishing pad according to the present embodiment will be described in detail below.
  • the abrasive layer constituting the chemical mechanical polishing pad according to the present embodiment is formed of a composition containing polyurethane (hereinafter, also simply referred to as “composition”) by a manufacturing method described later.
  • composition a composition containing polyurethane
  • the most suitable polyurethane may be selected appropriately in consideration of the material of the object to be polished and the affinity with the slurry used at the time of polishing.
  • the term "abrasive layer” refers to a single layer having a surface (hereinafter referred to as "abrasive surface") in contact with an object to be polished when chemical mechanical polishing is performed. That is, in the present invention, although another layer having no polishing surface may be included between the polishing layer and the support layer, the other layer is not a “polishing layer” because it does not have a polishing surface.
  • polishing layers containing polyurethane are classified into foam type and non-foam type.
  • the non-foaming type polishing layer which is widely used at present, its specific gravity and hardness are greater than that of the foam type due to its structure, and along with this, the polishing layer is used for the unevenness of the surface to be polished (surface such as wafer). Elastic deformation is reduced. As a result, the flatness of the surface to be polished tends to be good.
  • the hardness of the polishing layer is larger than that of the foam type, the generation of polishing defects (scratch, etc.) tends to increase due to polishing debris and pad debris which enter between the surface to be polished and the polishing layer.
  • the specific gravity and the hardness tend to be small due to the structure.
  • polishing debris or pad debris that has entered between the surface to be polished (surface such as a wafer) and the polishing layer is captured by the surface of the flexible polishing layer, and the pressing force against the surface to be polished causes polishing debris or pad Since the contact of scraps can be avoided, the occurrence of polishing defects can be reduced.
  • the elastic deformation of the polishing layer becomes large following the unevenness of the surface to be polished, the flatness of the surface to be polished tends to be deteriorated. From the above, it has been considered that the improvement of the flatness of the surface to be polished (the surface such as a wafer) and the reduction of the polishing defect (such as scratch) are contradictory characteristics.
  • the present inventors prepared a polishing layer using a composition containing a polyurethane, and controlled the specific gravity and the thermal conductivity of the polishing layer, the surface to be polished that had been difficult in the prior art. It has been found that both the improvement of the flatness of (the surface of a wafer etc.) and the reduction of polishing defects (scratch etc.) can be achieved, and stable polishing characteristics can be obtained even in long-time CMP.
  • thermoplastic polyurethane As described above, the structure and type of the polyurethane contained in the composition are not particularly limited, but when the object to be polished is a semiconductor wafer provided with a wiring, improvement in flatness of the surface to be polished and polishing defects ( It is preferable to use a thermoplastic polyurethane from the viewpoint of achieving a reduction in scratch).
  • the thermoplastic polyurethane more preferably contains a repeating unit derived from at least one selected from alicyclic isocyanates and aromatic isocyanates. According to a composition containing a thermoplastic polyurethane having such a chemical structure, an abrasive layer having excellent flexibility can be produced.
  • Abrasive layers containing polyurethanes in which thermally crosslinkable polyurethanes are crosslinked and molecular chains are strongly bonded are less likely to swell even in contact with water, as compared to abrasive layers prepared using thermoplastic polyurethanes. It has properties and can not reduce the surface hardness in the wet state. For this reason, when the polishing layer contains a cross-linked polyurethane, the polishing debris and the pad debris which get in between the surface to be polished and the polishing surface will be captured by the surface of the polishing layer having high surface hardness, Since they come in contact with the surface to be polished at a strong pressing pressure, the occurrence of polishing defects can not be suppressed.
  • a polishing layer produced from a composition containing a thermoplastic polyurethane containing a repeating unit derived from at least one selected from an alicyclic isocyanate and an aromatic isocyanate facilitates control of crystallinity, It becomes easy to control the specific gravity and hardness of the polishing layer.
  • alicyclic isocyanate examples include isophorone diisocyanate (IPDI), norbornene diisocyanate, hydrogenated 4,4'-diphenylmethane diisocyanate (hydrogenated MDI) and the like. These alicyclic isocyanates may be used alone or in combination of two or more.
  • aromatic isocyanate examples include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 2,2'-diphenylmethane diisocyanate, 2,4'-diphenylmethane diisocyanate, 4,4'-diphenylmethane diisocyanate, and naphthalene.
  • aromatic diisocyanates such as diisocyanate, 1,5-naphthalene diisocyanate, p-phenylene diisocyanate, m-phenylene diisocyanate and p-xylene diisocyanate.
  • 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, and 4,4'-diphenylmethane diisocyanate are preferable from the viewpoint of easy control of reaction with a hydroxyl group.
  • aromatic isocyanates may be used alone or in combination of two or more.
  • thermoplastic polyurethane contained in the said composition may use together alicyclic isocyanate and aromatic isocyanate, and may use other isocyanate other than these together.
  • Other isocyanates include, for example, aliphatic diisocyanates such as ethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate and 1,6-hexamethylene diisocyanate.
  • thermoplastic polyurethane contained in the said composition contains the repeating unit originating in alicyclic isocyanate.
  • the thermoplastic polyurethane can exhibit appropriate hardness, and surface hardness in the wet state can be more appropriately controlled, and flexibility is further increased. Therefore, it is suitable for implementation of the present invention.
  • thermoplastic polyurethane contained in the said composition further contains the repeating unit derived from at least 1 sort (s) selected from polyether polyol, polyester polyol, polycarbonate polyol, and polyolefin polyol.
  • s the repeating unit derived from at least 1 sort (s) selected from polyether polyol, polyester polyol, polycarbonate polyol, and polyolefin polyol.
  • the inclusion of the repeating units derived from the exemplified polyols tends to further improve the water resistance of the thermoplastic polyurethane.
  • thermoplastic polyurethane contained in the composition may contain a repeating unit derived from a chain extender.
  • chain extender include ethylene glycol, propylene glycol, 1,3-propanediol, 1,3-butylene glycol, 1,4-butanediol, 1,5-pentanediol, and 1,6-hexanediol.
  • Low molecular weight dihydric alcohols such as neopentyl glycol, 1,4-cyclohexanedimethanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol and 1,4-bis (2-hydroxyethoxy) benzene are mentioned Be Among these, ethylene glycol, propylene glycol, 1,3-propanediol, 1,3-butylene glycol, 1,4-butanediol, 1,5-pentanediol, from the viewpoint of easy control of reaction with an isocyanate group. 1,6-Hexanediol is preferred, and 1,4-butanediol is more preferred.
  • the thermoplastic polyurethane contained in the composition contains 2 to 60% by mass of a repeating unit derived from at least one selected from alicyclic isocyanate and aromatic isocyanate, based on 100% by mass of the thermoplastic polyurethane. Preferably, the content is 3 to 55% by mass.
  • a repeating unit derived from at least one selected from an alicyclic isocyanate and an aromatic isocyanate in the above range, the thermoplastic polyurethane exhibits appropriate hardness, and the surface hardness in the wet state is appropriately controlled. It is suitable for the implementation of the present invention because it can be done and its flexibility is increased.
  • thermoplastic polyurethane contained in the composition is not particularly limited, and the thermoplastic polyurethane can be produced according to a general method for producing polyurethane (for example, a conventionally known batch method or prepolymer method).
  • the composition may further contain a polymer compound other than the thermoplastic polyurethane.
  • the other polymer compound that can be added to the composition is preferably a polymer compound having a water absorption coefficient of 3 to 3000% (hereinafter, also referred to as "water-absorbent polymer compound").
  • water-absorbent polymer compound By adding the water-absorbing polymer compound, it is possible to impart appropriate water absorption to the polishing layer, and it is possible to easily control the volume change of the polishing layer which may occur due to swelling due to water absorption.
  • water-absorbent polymer compounds comprising at least one bond selected from ether bonds, ester bonds and amide bonds are more preferable.
  • water-absorbing polymer compound containing an ether bond examples include polyoxyethylene, polyoxyethylene alkyl ether, polyoxyethylene alkyl phenol ether, polyether ester amide, polyether amide imide, polypropylene glycol, polyoxypropylene butyl ether, polyoxy acid Propylene glyceryl ether, polyoxypropylene sorbite, oxyethylene-epichlorohydrin copolymer, methoxypolyethylene glycol (meth) acrylate copolymer, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether, poly Oxyethylene oleyl cetyl ether, polyoxyethylene polyoxypropylene glycol, polyoxyethylene ester Oxypropylene butyl ether, polyoxyethylene polyoxypropylene hexylene glycol ether, polyoxyethylene polyoxypropylene trimethylolpropane, polyoxyethylene polyoxypropylene glyceryl ether, copolymer
  • polyoxyethylene fatty acid ester for example, polyoxyethylene fatty acid ester, sucrose fatty acid ester, sorbitan fatty acid ester, polyoxyethylene sorbitan fatty acid ester, glycerin fatty acid ester, acrylic acid ester copolymer (acrylic rubber) Etc.
  • polyoxyethylene fatty acid ester include polyethylene glycol monostearate, polyethylene glycol laurate, polyethylene glycol monooleate, polyethylene glycol distearate and the like.
  • water-absorbing polymer compound containing an amide bond examples include fatty acid alkanolamides and modified polyamide resins.
  • the molecular weight of the water-absorbing polymer compound is preferably 500 to 1,000,000, and more preferably 5,000 to 500,000, as the weight average molecular weight in terms of polystyrene measured by gel permeation chromatography.
  • the content thereof is preferably 1% by mass to 20% by mass, based on 100% by mass of the total amount of the thermoplastic polyurethane and the water-absorbing polymer compound. More preferably, it is 3 mass% or more and 15 mass% or less, and particularly preferably 5 mass% or more and 10 mass% or less.
  • the volume change rate in the wet state can be easily adjusted to the range of 0.8% or more and 5.0% or less.
  • the volume change rate of the polishing layer is in the above range, the surface of the polishing layer is appropriately softened by water absorption, so that the flatness of the surface to be polished is improved and polishing defects (scratches) can be reduced. .
  • the composition may further comprise water soluble particles.
  • Such water soluble particles are preferably present in the composition in a uniformly dispersed state.
  • an abrasive layer in a state in which the water-soluble particles are uniformly dispersed can be obtained.
  • a polishing aqueous dispersion (hereinafter also referred to as “slurry”) consisting of abrasive grains and a chemical solution, the water-soluble particles are released from the surface of the polishing layer to retain the slurry. It is used for the purpose of forming possible pores (pores). For this reason, pores are formed on the surface of the abrasive layer by using the water-soluble particles without using a polyurethane foam having a cell structure, and the retention of the slurry becomes better. In addition, since pores are formed on the surface of the polishing layer, the surface hardness in the wet state can be controlled. Furthermore, it is possible to increase the specific gravity of the polishing layer by using particles having a large specific gravity.
  • the composition containing the thermoplastic polyurethane contains water-soluble particles
  • the elastic deformation of the polishing layer can be reduced by the water-soluble particles acting as a reinforcing agent such as a filler, so that the surface to be polished is Flatness can be improved, (2) excellent mechanical strength due to non-foaming type polishing layer, and (3) there is no need to use a sophisticated technique to uniformly control the foam cell structure It is more preferable from the point which is excellent in productivity from this.
  • the water-soluble particles are not particularly limited, and examples thereof include organic water-soluble particles and inorganic water-soluble particles. Specifically, in addition to a water-soluble polymer which is soluble in water, a water-absorbent resin which is swelled or gelled by contact with water and released from the surface of the polishing layer may be mentioned.
  • Examples of the material constituting the organic water-soluble particles include saccharides (polysaccharides such as starch, dextrin and cyclodextrin, lactose, mannitol etc.), celluloses (hydroxypropyl cellulose, methyl cellulose etc.), protein, polyvinyl alcohol, Polyvinyl pyrrolidone, polyacrylic acid, polyethylene oxide, sulfonated polyisoprene, sulfonated isoprene copolymer and the like can be mentioned.
  • saccharides polysaccharides such as starch, dextrin and cyclodextrin, lactose, mannitol etc.
  • celluloses hydroxypropyl cellulose, methyl cellulose etc.
  • protein polyvinyl alcohol
  • Polyvinyl pyrrolidone polyacrylic acid
  • polyethylene oxide polyethylene oxide
  • sulfonated polyisoprene sulfonated isoprene copoly
  • Examples of the material constituting the inorganic water-soluble particles include potassium acetate, potassium nitrate, potassium carbonate, potassium hydrogencarbonate, potassium bromide, potassium phosphate, potassium sulfate, magnesium sulfate, calcium nitrate and the like.
  • the water-soluble particles materials constituting organic water-soluble particles or inorganic water-soluble particles may be used alone or in combination of two or more. From the viewpoint that the hardness and other mechanical strengths of the polishing layer can be set to an appropriate value, the water-soluble particles are preferably solid.
  • the content of the water-soluble particles in the composition is preferably 3 to 150 parts by mass with respect to 100 parts by mass of the thermoplastic polyurethane.
  • the content of the water-soluble particles is in the above range, it is possible to produce a polishing layer that exhibits a high polishing rate in chemical mechanical polishing, and that has appropriate hardness and other mechanical strength.
  • the average particle size of the water-soluble particles is preferably 0.5 to 200 ⁇ m.
  • the size of the pores formed by releasing the water-soluble particles from the surface of the polishing layer of the chemical mechanical polishing pad is preferably 0.1 to 500 ⁇ m, more preferably 0.5 to 200 ⁇ m.
  • the specific gravity of the polishing layer provided in the chemical mechanical polishing pad according to the present embodiment is 1.1 or more and 1.3 or less, and preferably 1.15 or more and 1.27 or less.
  • the specific gravity of the polishing layer is in the above range, the hardness of the polishing layer is appropriate and the flatness of the surface to be polished is good, and the elastic deformation (following) of the polishing layer to the irregularities of the surface to be polished is appropriate Therefore, polishing defects (scratch) can be reduced.
  • the specific gravity of the polishing layer is less than the above range, the hardness of the polishing layer is too low, and the flatness of the surface to be polished is unfavorably deteriorated.
  • the specific gravity of the polishing layer exceeds the above range, the hardness of the polishing layer becomes too high, which is not preferable because polishing defects (scratch) increase.
  • the upper limit of the specific gravity of the polishing layer is 1.30 or less, in consideration of the balance between the currently known specific gravity of polyurethane and the appropriate hardness of the polishing layer.
  • a material having a large specific gravity in addition to urethane in the polishing layer.
  • a polishing layer having a specific gravity exceeding 1.30 can be produced by mixing a material having a large specific gravity, such as silica or alumina, with urethane as a filler.
  • the hardness of the polishing layer is increased by the mixed filler, and the scratch on the surface to be polished is significantly deteriorated. Therefore, the same effects as the polishing layer of the present invention can not be exhibited.
  • the specific gravity of the polishing layer can be measured by a method in accordance with “JIS Z8807”. Specifically, a sample of known mass is placed in a Le Chatelier pycnometer containing water, the volume of the sample is known from the rise of the liquid level by the sample, and the specific gravity is determined from the mass and volume of the sample.
  • the polishing layer provided in the chemical mechanical polishing pad according to the present embodiment is preferably a non-foaming type from the viewpoint of making the specific gravity in the above range.
  • the non-foaming type means that the polishing layer is substantially free of air bubbles.
  • the specific gravity of a urethane pad having a foam-type polishing layer currently marketed, for example, a general commercial polishing pad such as “IC 1000” manufactured by ROHM & HAAS is about 0.40 to 0.90.
  • the thermal conductivity of the polishing layer provided in the chemical mechanical polishing pad according to the present embodiment is 0.2 [W / m ⁇ K] or more, and is 0.3 [W / m ⁇ K] or more Is preferred. If the thermal conductivity of the polishing layer is 0.2 [W / m ⁇ K] or more, it is possible to rapidly diffuse into the polishing layer the frictional heat generated when the surface to be polished and the surface of the polishing pad rub against each other. It is possible to reduce the local temperature rise of the surface of the polishing pad. In addition, the durability of the polishing layer can be improved by reducing the accumulation of frictional heat generated by long-term CMP in the polishing layer.
  • the thermal conductivity of the polishing layer is preferably 0.2 [W / m ⁇ K] or more, but a currently known general-purpose engineering plastic (general-purpose engineering plastic: polyvinyl alcohol
  • general-purpose engineering plastic polyvinyl alcohol
  • the upper limit of the thermal conductivity of polyvinyl chloride, epoxy resin, polyurethane, polyacrylic resin, polyester resin, etc. is naturally 0.6 [W / m ⁇ K].
  • new polyurethanes with higher thermal conductivity will be developed in the future. Therefore, the technical idea of the present invention is not limited at all by the upper limit of the thermal conductivity described above.
  • the polishing layer provided in the chemical mechanical polishing pad according to the present embodiment is preferably a non-foaming type from the viewpoint of the thermal conductivity in the above range. Moreover, it is preferable to contain a filler with high heat conductivity, for example, the above-mentioned water-soluble particle etc. can be contained as a filler.
  • a filler with high heat conductivity for example, the above-mentioned water-soluble particle etc.
  • the thermal conductivity of the polishing layer of a urethane pad having a foam-type polishing layer currently marketed for example, a general commercial polishing pad such as “IC 1000” manufactured by ROHM & HAAS, is 0.05 to 0. It is about ten.
  • the chemical mechanical polishing pad according to the present embodiment has a laminate composed of a polishing layer and a support layer described later, or a laminate comprising another layer between the polishing layer and the support layer.
  • the thermal conductivity of the laminate is preferably 0.2 [W / m ⁇ K] or more, and more preferably 0.3 [W / m ⁇ K] or more.
  • the thermal conductivity of the laminate is 0.2 [W / m ⁇ K] or more, the frictional heat generated when the object to be polished and the polishing layer rub against each other is efficiently via the other layer or the support layer. It can be diffused to the surface plate which fixes the polishing pad.
  • the thermal conductivity of the laminate can be calculated from the thickness of each layer and the thermal conductivity of each layer.
  • the entire chemical mechanical polishing pad has another layer (thickness: d2, thermal conductivity ⁇ 2) between the polishing layer (thickness: d1, thermal conductivity ⁇ 1) and the support layer (thickness: d3, thermal conductivity ⁇ 3)
  • the thermal conductivity can be calculated by the following equation (3).
  • what is necessary is just to calculate the value of d2 and d2 / ⁇ 2 as 0 in following formula (3), when not containing the said other layer.
  • Thermal conductivity [W / m ⁇ K] (d1 + d2 + d3) / ((d1 / ⁇ 1) + (d2 / ⁇ 2) + (d3 / ⁇ 3)) (3)
  • thermal conductivity of a urethane pad with a foam type polishing layer currently marketed for example, a general commercial polishing pad such as "IC 1000" manufactured by ROHM & HAAS, is about 0.02 to 0.10. is there.
  • the residual strain in tension of the polishing layer provided in the chemical mechanical polishing pad according to the present embodiment is preferably 2% or more and 10% or less, and more preferably 2% or more and 9% or less preferable.
  • polishing debris and pad debris are gradually accumulated there, causing clogging and deteriorating the polishing characteristics. Therefore, by dressing with a diamond grindstone (hereinafter, also referred to as “diamond conditioning"), the surface of the clogged polishing layer is scraped off, and the same surface as the initial state below from the surface is exposed and used. During this diamond conditioning, fuzz and pad debris on the surface of the polishing layer are generated.
  • diamond conditioning also referred to as “diamond conditioning”
  • FIG. 1 is a schematic view for explaining the concept of residual strain when the polishing layer is pulled.
  • FIGS. 2A to 2E are enlarged views of a region I in FIG. 1 for explaining the concept of residual strain during tension of the polishing layer.
  • FIG. 1 shows that during diamond conditioning, the surface of the polishing layer 10 is scraped off by rotating the dresser 20 in the direction of the arrow in FIG.
  • FIGS. 2A to 2B when the polishing layer 10 is dressed, a part of the surface of the polishing layer 10 is pulled by the dresser 20 and extended. Then, as shown in FIG. 2C, a part of the surface of the polishing layer 10 is cut to generate pad chips 10a.
  • FIG. 2C shows that a part of the surface of the polishing layer 10 is cut to generate pad chips 10a.
  • the unstretched portion 10b shrinks to return to the original state due to the elasticity of the polishing layer, but as shown in FIG. 2E, fuzz corresponding to the residual strain of the polishing layer Part 10b 'is generated.
  • the residual strain in tension of the polishing layer is an index indicating the degree of fuzzing on the surface of the polishing layer during diamond conditioning.
  • the residual strain at the time of tension of the polishing layer can be measured by a method in accordance with “JIS K6270”.
  • the test apparatus includes a fixed-side clamp that holds one end of the test strip, a reciprocating clamp that holds and reciprocates the other end of the test strip, a driving device that reciprocates the clamp at a constant frequency, and a clamp It is comprised by the counter etc. which display the frequency
  • a specific measurement method is to attach two dumbbell-shaped test pieces to a clamp, move the test apparatus, and stop after repeating 1 ⁇ 10 3 times. Stop at a position where stress is not applied to one test piece, and measure the distance between marks of the test piece after one minute.
  • the test frequency is usually in the range of 1 to 5 Hz.
  • the temperature and humidity at the time of measurement shall be in accordance with "JIS K6250" "6.1 Standard temperature of test room” and "6.2 Standard humidity of test room”. That is, the standard temperature of the test room is 23 ° C., and the tolerance is ⁇ 2 ° C. The standard humidity in the laboratory is 50% relative humidity, with a tolerance of ⁇ 10%.
  • the polishing layer provided in the chemical mechanical polishing pad according to the present embodiment preferably has a volume change rate of 0.8% or more and 5% or less when the polishing layer is immersed in water at 23 ° C. for 24 hours. And 1% or more and 3% or less.
  • FIGS. 3A to 3B are schematic views for explaining the concept of the volume change rate in the polishing layer.
  • Chemical mechanical polishing pads are constantly exposed to the slurry during the polishing operation.
  • the recess 30 of the polishing layer 10 which has been produced with a predetermined size and shape before water absorption as shown in FIG. 3A, is caused by swelling due to water absorption as shown in FIG. The degree of fuzzing may change.
  • the volume change rate when immersed in water is in the above range, the surface of the polishing layer is appropriately softened by swelling due to water absorption, so that the occurrence of scratches can be reduced.
  • the volume change rate is less than the above range, the swelling due to water absorption is small and the softening of the surface of the polishing layer is insufficient, so the effect of reducing the occurrence of scratches can not be sufficiently exhibited. If the volume change rate exceeds the above range, swelling due to water absorption becomes too large, and although the occurrence of scratches can be reduced, the flatness of the object to be polished is deteriorated. In particular, in the case where a recess pattern is formed on the polishing surface, if swelling due to water absorption becomes too large, the shape and dimensions of the recess pattern may change according to the polishing time, and stable polishing characteristics may not be obtained. For this reason, it is preferable to swell to soften the surface of the polishing layer, but excessive swelling is not preferable because it causes deformation of the polishing surface.
  • the Duro D hardness of the polishing layer provided in the chemical mechanical polishing pad according to the present embodiment is preferably 50 D to 80 D, more preferably 55 D to 75 D, and 60 D to 70 D. Is particularly preferred.
  • FIG. 4A to 4B are schematic views for explaining the concept of Duro D hardness in the polishing layer.
  • the Duro D hardness is an index indicating the degree of macroscopic deflection of the polishing layer 10 when such a load is applied in the polishing process. This can be understood from the measurement method described later.
  • the Duro D hardness of the polishing layer is in the above range, the Duro D hardness of the polishing layer is appropriate, so that the flatness of the surface to be polished is improved and the elastic deformation of the polishing layer to the unevenness of the surface to be polished ( Since the followability is appropriate, polishing defects (scratch) can be reduced. If the Duro D hardness of the polishing layer is less than the above range, the flatness of the surface to be polished is unfavorably deteriorated. In addition, when the Duro D hardness of the polishing layer exceeds the above range, polishing defects (scratch) increase, which is not preferable.
  • the Duro D hardness of the polishing layer can be measured by a method in accordance with "JIS K6253". Specifically, place the test specimen on a flat, firm surface, keep the pressure plate of the Type D durometer parallel to the surface of the test specimen, and ensure that the push needle is perpendicular to the surface of the test specimen. Hold the Type D durometer and bring the pressure plate into contact with the test piece so as not to give an impact. The needle tip is measured at a position at least 12 mm away from the end of the test piece. A reading is taken 15 seconds after contacting the pressure plate with the test piece. The number of measurement points is measured 5 times at a position separated by 6 mm or more, and the median value is taken as Duro D hardness.
  • Surface hardness in wet condition of the polishing layer comprising the chemical mechanical polishing pad according to surface hardness present embodiment in the wet state is preferably 2N / mm 2 or more 10 N / mm 2 or less, 3N / mm 2 or more 9N / more preferably mm 2 less, and particularly preferably 4N / mm 2 or more 8N / mm 2 or less.
  • the surface hardness of the polishing layer in the wet state is an index indicating the surface hardness of the polishing layer in actual use of CMP.
  • 5A to 5B are schematic views for explaining the concept of surface hardness in the polishing layer. As shown in FIG. 5A, a micro-sized probe 40 is pushed into the surface of the polishing layer 10.
  • the polishing layer 10 immediately below the probe 40 is deformed so as to be pushed out around the probe 40.
  • the surface hardness is an index that represents the degree of deformation or deflection of the electrode surface of the polishing layer. That is, while the Duro D hardness measurement, which is a hardness measurement method in millimeter units as shown in FIGS. 4A and 4B, provides data representing macro hardness of the entire polishing layer, polishing as shown in FIGS.
  • the surface hardness measurement in the wet state of the layer provides data representing the microhardness of the electrode surface of the polishing layer.
  • the indentation depth of the polishing layer in actual use of CMP is 5 micrometers to 50 micrometers.
  • the surface hardness of the polishing layer in the wet state it is preferable to determine the surface hardness of the polishing layer in the wet state.
  • the surface hardness of the polishing layer in the wet state is in the above range, the flexibility of the electrode surface of the polishing layer becomes appropriate, so that polishing defects (scratches) can be reduced.
  • the surface hardness of the polishing layer in the wet state is less than the above range, the flatness of the surface to be polished may be deteriorated. If the surface hardness of the polishing layer in the wet state exceeds the above range, polishing defects (scratch) may increase, which is not preferable.
  • the surface hardness of the polishing layer in the wet state is determined by using a nanoindenter (product name: HM2000) manufactured by FISCHER in a polishing layer immersed in water at 23 ° C. for 4 hours. Indicated by the universal hardness (HU) of
  • the shape of the polishing layer and the recess The planar shape of the polishing layer is not particularly limited, but may be, for example, a circular shape.
  • the size thereof is preferably 150 mm to 1200 mm in diameter, more preferably 500 mm to 1000 mm in diameter.
  • the thickness of the polishing layer is preferably 0.5 mm to 5.0 mm, more preferably 1.0 mm to 4.0 mm, and particularly preferably 1.5 mm to 3.5 mm.
  • a plurality of recesses may be formed on the polishing surface.
  • the recess holds the slurry supplied during CMP and distributes it uniformly to the polishing surface, and temporarily holds waste such as polishing debris, pad debris and used slurry, to the outside. It has a function as a route for discharging.
  • the depth of the recess can be preferably 0.1 mm or more, more preferably 0.1 mm to 2.5 mm, particularly preferably 0.2 mm to 2.0 mm.
  • the width of the recess can be preferably 0.1 mm or more, more preferably 0.1 mm to 5.0 mm, particularly preferably 0.2 mm to 3.0 mm.
  • the distance between adjacent recesses may be preferably 0.05 mm or more, more preferably 0.05 mm to 100 mm, and particularly preferably 0.1 mm to 10 mm.
  • the pitch which is the sum of the width of the recess and the distance between the adjacent recesses may be preferably 0.15 mm or more, more preferably 0.15 mm to 105 mm, particularly preferably 0.6 mm to 13 mm. .
  • the recess may be formed at a predetermined interval in the above range. By forming the recess having the shape in the above range, it is possible to easily manufacture a chemical mechanical polishing pad which is excellent in the scratch reduction effect of the surface to be polished and which has a long life.
  • each said preferable range can be made into each combination. That is, for example, the depth is preferably 0.1 mm or more, the width is 0.1 mm or more, the interval is 0.05 mm or more, the depth is 0.1 mm to 2.5 mm, and the width is 0.1 mm to 5. 0 mm, more preferably 0.05 mm to 100 mm, particularly preferably 0.2 mm to 2.0 mm in depth, 0.2 mm to 3.0 mm in width, and 0.1 mm to 10 mm in distance .
  • a multi-blade tool having a shape described in JP-A-2006-167811, JP-A-2001-18164, or JP-A-2008-183657 can be used.
  • the cutting edge of the tool used is selected from diamond or at least one metal element selected from Group 4, 5 or 6 metals such as Ti, Cr, Zr, V, etc. and nitrogen, carbon and oxygen And at least one non-metallic element.
  • the coating layer is not limited to the case where one layer is provided, and a plurality of layers may be provided with different materials.
  • the thickness of such a coating layer is preferably 0.1 to 5 ⁇ m, and more preferably 1.5 to 4 ⁇ m.
  • known techniques such as an arc ion plating apparatus can be appropriately selected and used according to the material of the tool, the coating material, and the like.
  • the polishing layer used in the present embodiment can be obtained by molding the above-described composition containing polyurethane. Kneading of the composition can be performed by a known kneader or the like. As a kneader, a roll, a kneader, a Banbury mixer, an extruder (single screw, multi-screw) etc. are mentioned, for example. As a method of molding the polishing layer from the composition, the composition plasticized at 120 ° C. to 230 ° C. may be molded by a method of press molding, extrusion molding or injection molding, and plasticizing / sheeting. The specific gravity and the hardness can also be controlled by appropriately adjusting the molding conditions.
  • a recess may be formed on the polished surface by cutting.
  • the concave portion can be formed simultaneously with the rough shape of the polishing layer by molding the above-described composition using a mold in which a pattern to be a concave portion is formed.
  • the chemical mechanical polishing pad according to the present embodiment may be composed of only the above-described polishing layer, but a support layer may be provided on the surface opposite to the polishing surface of the polishing layer.
  • the support layer is used to support the polishing layer on a polishing machine platen in a chemical mechanical polishing pad.
  • the support layer may be an adhesive layer or may be a cushion layer having an adhesive layer on both sides.
  • the adhesive layer can be, for example, an adhesive sheet.
  • the thickness of the adhesive sheet is preferably 50 ⁇ m to 250 ⁇ m. By having a thickness of 50 ⁇ m or more, the pressure from the polishing surface side of the polishing layer can be sufficiently relieved, and by having a thickness of 250 ⁇ m or less, the effect of asperities is not uniform on the polishing performance. A chemical mechanical polishing pad having a thickness as described above is obtained.
  • the material of the pressure-sensitive adhesive sheet is not particularly limited as long as the polishing layer can be fixed to a platen for a polishing apparatus, but an acrylic or rubber material having a lower elastic modulus than the polishing layer is preferable.
  • the adhesive strength of the pressure-sensitive adhesive sheet is not particularly limited as long as the chemical mechanical polishing pad can be fixed to the surface plate of the polishing apparatus, but when the adhesive strength of the pressure-sensitive adhesive sheet is measured in accordance with "JIS Z0237", the adhesive strength is preferable. Is 3 N / 25 mm or more, more preferably 4 N / 25 mm or more, and particularly preferably 10 N / 25 mm or more.
  • the material of the cushion layer is not particularly limited as long as it is a material having a hardness lower than that of the polishing layer, and may be a porous body (foam) or a non-porous body.
  • a cushion layer the layer which shape
  • the thickness of the cushioning layer is preferably 0.1 mm to 5.0 mm, more preferably 0.5 mm to 2.0 mm.
  • the thermal conductivity of the support layer is also preferably 0.2 [W / m ⁇ K] or more, and more preferably 0.3 [W / m ⁇ K] or more. If the thermal conductivity of the support layer is 0.2 [W / m ⁇ K] or more, the frictional heat generated when the surface to be polished and the surface of the polishing pad rub against each other is efficiently determined via the support layer. It can be diffused to the board. As a result, since the frictional heat generated in the polishing layer can be efficiently removed, the temperature rise in the polishing layer can be reduced and stable polishing characteristics can be maintained even when CMP is performed for a long time. Can.
  • the thermal conductivity of the support layer can be measured by the same method as the above-described method of measuring the thermal conductivity of the polishing layer.
  • the thermal conductivity of the support layer of a urethane pad having a foam type polishing layer currently marketed for example, a general commercial polishing pad such as "IC 1000" manufactured by ROHM & HAAS, is 0.01 to 0.10. It is an extent.
  • the compressibility of the support layer is preferably 5% or more, more preferably 6% or more.
  • the pressing pressure per unit area differs between the central portion and the end portion, and the pressing pressure at the end portion tends to be larger. Then, the difference between the polishing rate at the central portion of the object to be polished and the polishing rate at the end increases, making it difficult to polish the surface to be polished at a uniform polishing rate.
  • the compression ratio of the support layer is in the above range, the increase in the pressing pressure at the end can be reduced by effectively deforming the support layer, so that the entire surface to be polished is polished at a uniform polishing rate.
  • the compression ratio of the polishing layer is in the above range, the pressing pressure exerted on the object to be polished is too low, the polishing rate may be significantly reduced, and the flatness of the surface to be polished may be impaired. Therefore, in order to achieve the object of the present invention, it is desirable that the compression ratio of the support layer be in the above range.
  • the chemical mechanical polishing method according to the present embodiment is characterized by chemical mechanical polishing using the above-mentioned chemical mechanical polishing pad.
  • the aforementioned chemical mechanical polishing pad is formed of a composition containing polyurethane and has a polishing layer having a specific range of specific gravity and thermal conductivity. Therefore, according to the chemical mechanical polishing method according to the present embodiment, it is possible to simultaneously improve the flatness of the surface to be polished in the CMP step and reduce the polishing defect (scratch), and in the CMP for a long time. Also, stable polishing characteristics can be maintained.
  • a commercially available chemical mechanical polishing apparatus can be used.
  • a commercially available chemical mechanical polishing apparatus for example, model “EPO-112”, model “EPO-222” (above, manufactured by Ebara Corp.); model “LGP-510”, model “LGP-552” (above, Lapmaster SFT Corporation); model “Mirra”, model “Reflexion LK” (above, manufactured by Applied Materials, Inc.) and the like.
  • an optimum slurry can be selected appropriately according to the object to be polished (copper film, insulating film, low dielectric constant insulating film, etc.).
  • Example 1 100 parts by mass of non-alicyclic thermoplastic polyurethane (manufactured by BASF, trade name "Elastol 1174D, hardness 70D), ⁇ -cyclodextrin (made by salt water port semi-sugar Co., Ltd., trade name” Dexipearl ⁇ - "as water-soluble particles
  • a thermoplastic polyurethane composition was prepared by kneading 29 parts by mass of 100 ", average particle diameter 20 ⁇ m) with a router adjusted to a temperature of 200 ° C. The produced thermoplastic polyurethane composition was compression molded at 180 ° C.
  • Example 2 First, in the same manner as in Example 1, a polishing layer was obtained. A sheet-like urethane (product name: Nippa Rey EXY) to be a support layer on the tape surface by laminating a double-sided tape # 550PS5 (manufactured by Sekisui Chemical Co., Ltd.) on the surface of the polishing layer produced in this manner and having no recess formed. "Nippon Kasho Co., Ltd.” was laminated, and a double-sided tape # 442JA (manufactured by 3M) was laminated to prepare a chemical mechanical polishing pad.
  • a sheet-like urethane product name: Nippa Rey EXY
  • Examples 3 and 4 Chemical mechanical polishing pads of Examples 3 and 4 were produced in the same manner as Example 1 except that the types and contents of the respective components of the composition were changed to those described in Table 1.
  • Example 5 First, in the same manner as in Example 1, a polishing layer was obtained. A double-sided tape # 550PS5 (manufactured by Sekisui Chemical Co., Ltd.) is laminated on the surface of the polishing layer thus produced in which no recess is formed, and a support layer having a compression ratio and a thermal conductivity described in Table 1 is obtained. It stuck, it laminated on double-sided tape # 442JA (made by 3M company), and produced the chemical mechanical polishing pad.
  • a double-sided tape # 550PS5 manufactured by Sekisui Chemical Co., Ltd.
  • a support layer having a compression ratio and a thermal conductivity described in Table 1 is obtained. It stuck, it laminated on double-sided tape # 442JA (made by 3M company), and produced the chemical mechanical polishing pad.
  • the support layer which is the compression ratio and thermal conductivity described in Table 1 is spherical ethylene oxide (trade name "WF-15C") to hydrogenated ethylene-butylene block copolymer (trade name "DYNARON", manufactured by JSR Corporation).
  • WF-15C spherical ethylene oxide
  • DYNARON hydrogenated ethylene-butylene block copolymer
  • Example 6 In the same manner as in Example 5, a chemical mechanical polishing pad was produced.
  • the support layer which is the compression ratio and thermal conductivity described in Table 1 is spherical alumina (trade name "DAM-70") to hydrogenated ethylene-butylene block copolymer (trade name "DYNARON", manufactured by JSR Corporation). What was added by an appropriate amount so as to obtain the compression ratio and thermal conductivity described in Table 1 was manufactured by kneading with a kneader and forming into a sheet.
  • DAM-70 spherical alumina
  • DYNARON hydrogenated ethylene-butylene block copolymer
  • Example 7 A chemical mechanical polishing pad was produced in the same manner as in Example 2 except that Sanmorph (manufactured by Sun Delta Co., Ltd.) was used as a support layer.
  • Comparative Example 1 A commercially available chemical mechanical polishing pad (manufactured by ROHM & HAAS, trade name "IC 1000", the polishing layer is made of a thermally crosslinked polyurethane resin) was used. When the physical property of the polishing layer was measured by the method mentioned later, it was specific gravity 0.81 and thermal conductivity 0.05 W / m * K.
  • Comparative example 2 100 parts by mass of 1,2-polybutadiene (manufactured by JSR Corporation, trade name “RB 830", hardness 47 D), ⁇ -cyclodextrin (trade name "Dixipearl ⁇ -100", manufactured by Salt Water Port Segarase Co., Ltd., as water-soluble particles A composition was obtained in which 38 parts by mass of average particle diameter 20 ⁇ m were mixed.
  • Example 1 100 parts by mass of the composition obtained was further mixed with 1 part by mass of an organic peroxide (manufactured by NOF Corporation, trade name "PARK MIL D-40") to obtain a composition, followed by Example 1
  • a polishing layer comprising a water-soluble particle-containing thermally crosslinked polybutadiene resin was obtained.
  • a double-sided tape # 550PS5 (manufactured by Sekisui Chemical Co., Ltd.) is laminated on the surface of the polishing layer produced in this manner on which the concave portion is not formed, and a high density thin sheet-like hydrogenated ethylene to be a support layer is formed on the tape surface.
  • a butylene block copolymer (trade name "DAYNARON", manufactured by JSR Corporation) was attached, and a double-sided tape # 442JA (manufactured by 3M Corporation) was laminated to prepare a chemical mechanical polishing pad.
  • volume change rate was measured for the polishing layer and the polishing layer of IC 1000 produced in the above-mentioned “3.1. Production of chemical mechanical polishing pad”.
  • the surface hardness in the wet state of the polishing layer was measured for the polishing layer prepared in “3.1. Production of chemical mechanical polishing pad” and the polishing layer of IC 1000.
  • the surface hardness of the polishing layer in the wet state is as follows: Using a nano indenter (manufactured by FISCHER, model “HM 2000”) for the polishing layer immersed in water at 23 ° C. for 4 hours ) was measured as surface hardness. The results are shown in Table 1 together.
  • Support layer thickness at 600 gf (10 gf support layer Support layer thickness at a thickness of -600 gf) Support layer thickness at a 100 gf ⁇ 100 compression ratio (%) (6)
  • the object to be polished is subjected to chemical mechanical polishing treatment for 1 minute under the conditions described in “3.4. Evaluation of chemical mechanical polishing”, and the film thickness before and after the treatment is measured by an electroconductive film thickness meter (manufactured by KLA Tencor Corporation) The polishing rate was calculated from the film thickness before and after the treatment and the polishing treatment time, using the type “Omni map RS 75”).
  • the end point time to clear Cu is calculated by the time from the start of polishing to the end point detected by the change of the table torque current, and the time 1.2 times the end point detection time for the patterned wafer
  • a pattern where a copper wiring portion with a width of 100 ⁇ m and an insulating portion with a width of 100 ⁇ m are alternately continuous is 3.0 mm in the vertical direction with respect to the length direction.
  • the dishing was evaluated by measuring the amount of depression (hereinafter, also referred to as “the amount of dishing”) of copper wiring in a portion with a width of 100 ⁇ m using the type “HRP-240”), and was used as an index of flatness. The results are shown in Table 1 together.
  • the amount of dishing is preferably less than 400 ⁇ , more preferably less than 300 ⁇ , and particularly preferably less than 200 ⁇ .
  • the number of scratches on the entire surface of the wafer was measured using a wafer defect inspection device (model "KLA 2351" manufactured by KLA-Tencor Co., Ltd.) on the surface to be polished of the patterned wafer after polishing processing. The results are shown in Table 1 together.
  • the number of scratches is preferably less than 50, more preferably less than 30, and particularly preferably less than 20.
  • the PETEOS film is a silicon oxide film formed by a chemical vapor deposition method using tetraethyl silicate (TEOS) as a raw material and plasma as acceleration conditions.
  • TEOS tetraethyl silicate
  • an optical interference type film thickness measuring device (Nanometrics Japan Co., Ltd., type “about 33 points uniformly taken except the range of 5 mm from both ends respectively in the diameter direction
  • the thickness of the PETEOS film before and after chemical mechanical polishing was measured using Nano Spec 6100 ′ ′). From this measurement result, the polishing rate was calculated by the following formulas (7) and (8).
  • Polishing amount (nm) film thickness before polishing (nm)-film thickness after polishing (nm) (7)
  • Polishing rate (nm / min) average value of polishing amount at 33 points (nm) / polishing time (minutes) (8)
  • Table 1 also shows the evaluation results of the polishing rate. In addition, when the polishing rate was 200 nm / min or more, it was judged that the polishing characteristics were good, and when the polishing rate was less than 200 nm / min, it was determined that the polishing characteristics were poor.
  • polishing rate change rate (%) (((polishing rate after dressing for 10 hours ⁇ initial polishing rate) / initial polishing rate) ⁇ 100 (9)
  • the rate of change of the polishing rate at the edge portion is preferably as small as possible, but if it is 30 or less, it can be judged that the performance can be put to practical use.
  • the evaluation results of the rate of change of the polishing rate at the edge portion are also shown in Table 1.
  • the polishing layer has a low thermal conductivity of 0.10 [W / m ⁇ K], so polishing is performed. There is a tendency for frictional heat to be accumulated in the layer. Therefore, it is considered that the durability of the polishing layer of the chemical mechanical polishing pad according to Comparative Example 1 is poor.
  • the chemical mechanical polishing pad according to Comparative Example 1 has a laminate of the polishing layer and the support layer, the thermal conductivity of the laminate is also as low as 0.05 [W / m ⁇ K]. It is thought that it makes the diffusion of frictional heat difficult.
  • the thermal conductivity is sufficiently high at 0.24 [W / m ⁇ K] but the hydrophilicity of the surface is poor, and polishing is Since the heat transfer to the slurry on the surface of the layer becomes insufficient, the durability of the polishing layer becomes poor. In addition, the polishing characteristics of the scratch were inferior.
  • the chemical mechanical polishing pad according to the present invention has a flatness and a balance by defining the balance between the specific gravity and the thermal conductivity of the polishing layer containing polyurethane. It was possible to manufacture a chemical mechanical polishing pad excellent in polishing characteristics such as scratch performance and durability.
  • the present invention is not limited to the embodiments described above, and various modifications are possible.
  • the invention includes configurations substantially the same as the configurations described in the embodiments (for example, configurations having the same function, method and result, or configurations having the same purpose and effect).
  • the present invention also includes configurations in which nonessential parts of the configurations described in the embodiments are replaced.
  • the present invention also includes configurations that can achieve the same effects as the configurations described in the embodiments, or configurations that can achieve the same purpose.
  • the present invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Tampon à polir chimico-mécanique caractérisé en ce qu'il présente une couche de polissage formée à partir d'une composition contenant du polyuréthane. Cette couche de polissage possède une densité de 1,1-1, 3 et une conductivité thermique de 0,2 [W/m K] min.
PCT/JP2011/077904 2010-12-07 2011-12-02 Tampon à polir chimico-mécanique et son procédé d'utilisation Ceased WO2012077592A1 (fr)

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JP2012547822A JPWO2012077592A1 (ja) 2010-12-07 2011-12-02 化学機械研磨パッドおよびそれを用いた化学機械研磨方法
US13/992,554 US20130316621A1 (en) 2010-12-07 2011-12-02 Chemical mechanical polishing pad and chemical mechanical polishing method using same

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015151785A1 (fr) * 2014-03-31 2015-10-08 富士紡ホールディングス株式会社 Tampon à polir, et procédé de fabrication de celui-ci
WO2023048265A1 (fr) * 2021-09-27 2023-03-30 株式会社クラレ Tampon de polissage
WO2023048266A1 (fr) * 2021-09-27 2023-03-30 株式会社クラレ Tampon de polissage
WO2025050490A1 (fr) * 2023-09-05 2025-03-13 湖北鼎汇微电子材料有限公司 Tampon de polissage et procédé de fabrication de dispositif à semi-conducteur

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150056895A1 (en) * 2013-08-22 2015-02-26 Cabot Microelectronics Corporation Ultra high void volume polishing pad with closed pore structure
US9649741B2 (en) * 2014-07-07 2017-05-16 Jh Rhodes Company, Inc. Polishing material for polishing hard surfaces, media including the material, and methods of forming and using same
JP6248857B2 (ja) * 2014-08-05 2017-12-20 信越半導体株式会社 研磨布の評価方法
JP2016087770A (ja) 2014-11-11 2016-05-23 株式会社東芝 研磨布および研磨方法
JP7105334B2 (ja) * 2020-03-17 2022-07-22 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッドおよびこれを用いた半導体素子の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001507997A (ja) * 1997-01-13 2001-06-19 ローデル ホールディングス インコーポレイテッド 光露光製版によって形成された表面パターンを有する重合体研磨パッド及びこれに関連する方法
JP2004025407A (ja) * 2002-06-27 2004-01-29 Jsr Corp 化学機械研磨用研磨パッド
JP2005303121A (ja) * 2004-04-14 2005-10-27 Psiloquest Inc 耐剥離性研磨パッド
JP2009034770A (ja) * 2007-08-01 2009-02-19 Toyo Tire & Rubber Co Ltd 研磨パッド
JP2010001454A (ja) * 2008-01-24 2010-01-07 Jsr Corp 化学機械研磨パッドの研磨層形成用組成物、化学機械研磨パッドおよび化学機械研磨方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049396A (en) * 1973-05-01 1977-09-20 National Research Development Corporation Molded abrasive article comprising non-foamed, friable polyurethane and process
JP2002066905A (ja) * 2000-08-28 2002-03-05 Hitachi Ltd 半導体装置の製造方法及びその装置
KR100905266B1 (ko) * 2000-12-01 2009-06-29 도요 고무 고교 가부시키가이샤 연마 패드
JP2004266186A (ja) * 2003-03-04 2004-09-24 Hitachi Chem Co Ltd 研磨用パッド及び研磨物の製造法
JP3769581B1 (ja) * 2005-05-18 2006-04-26 東洋ゴム工業株式会社 研磨パッドおよびその製造方法
EP2135707A4 (fr) * 2007-03-20 2013-10-09 Kuraray Co Coussin pour tampon de polissage et tampon de polissage utilisant le coussin
JP2010153782A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
JP2010153781A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001507997A (ja) * 1997-01-13 2001-06-19 ローデル ホールディングス インコーポレイテッド 光露光製版によって形成された表面パターンを有する重合体研磨パッド及びこれに関連する方法
JP2004025407A (ja) * 2002-06-27 2004-01-29 Jsr Corp 化学機械研磨用研磨パッド
JP2005303121A (ja) * 2004-04-14 2005-10-27 Psiloquest Inc 耐剥離性研磨パッド
JP2009034770A (ja) * 2007-08-01 2009-02-19 Toyo Tire & Rubber Co Ltd 研磨パッド
JP2010001454A (ja) * 2008-01-24 2010-01-07 Jsr Corp 化学機械研磨パッドの研磨層形成用組成物、化学機械研磨パッドおよび化学機械研磨方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015151785A1 (fr) * 2014-03-31 2015-10-08 富士紡ホールディングス株式会社 Tampon à polir, et procédé de fabrication de celui-ci
JP2015193060A (ja) * 2014-03-31 2015-11-05 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
TWI621506B (zh) * 2014-03-31 2018-04-21 日商富士紡控股股份有限公司 硏磨墊及其製造方法
WO2023048265A1 (fr) * 2021-09-27 2023-03-30 株式会社クラレ Tampon de polissage
WO2023048266A1 (fr) * 2021-09-27 2023-03-30 株式会社クラレ Tampon de polissage
JP7611412B2 (ja) 2021-09-27 2025-01-09 株式会社クラレ 研磨パッド
JP7611411B2 (ja) 2021-09-27 2025-01-09 株式会社クラレ 研磨パッド
WO2025050490A1 (fr) * 2023-09-05 2025-03-13 湖北鼎汇微电子材料有限公司 Tampon de polissage et procédé de fabrication de dispositif à semi-conducteur

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