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WO2012062065A1 - 交流led白光发光装置 - Google Patents

交流led白光发光装置 Download PDF

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Publication number
WO2012062065A1
WO2012062065A1 PCT/CN2011/071433 CN2011071433W WO2012062065A1 WO 2012062065 A1 WO2012062065 A1 WO 2012062065A1 CN 2011071433 W CN2011071433 W CN 2011071433W WO 2012062065 A1 WO2012062065 A1 WO 2012062065A1
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WO
WIPO (PCT)
Prior art keywords
led
white light
light emitting
light
luminescent material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2011/071433
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English (en)
French (fr)
Inventor
张洪杰
张明
李成宇
赵昆
李东明
张立
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changchun Institute of Applied Chemistry of CAS
Sichuan Sunfor Light Co Ltd
Original Assignee
Changchun Institute of Applied Chemistry of CAS
Sichuan Sunfor Light Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2013538035A priority Critical patent/JP2014502419A/ja
Priority to ES11839740.5T priority patent/ES2622331T3/es
Priority to US13/883,832 priority patent/US9185761B2/en
Priority to SG2013036132A priority patent/SG190239A1/en
Priority to CA2817167A priority patent/CA2817167C/en
Priority to EP11839740.5A priority patent/EP2639839B1/en
Priority to KR1020137014540A priority patent/KR20130125775A/ko
Priority to RU2013125341/28A priority patent/RU2541425C2/ru
Priority to AU2011328857A priority patent/AU2011328857B2/en
Priority to CN201180053822.0A priority patent/CN103329289B/zh
Application filed by Changchun Institute of Applied Chemistry of CAS, Sichuan Sunfor Light Co Ltd filed Critical Changchun Institute of Applied Chemistry of CAS
Publication of WO2012062065A1 publication Critical patent/WO2012062065A1/zh
Priority to ZA2013/03331A priority patent/ZA201303331B/en
Anticipated expiration legal-status Critical
Priority to US14/873,937 priority patent/US20160029454A1/en
Priority to AU2016201343A priority patent/AU2016201343B2/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10—Controlling the intensity of the light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H05B45/42—Antiparallel configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Definitions

  • the invention relates to an alternating current LED white light emitting device, belonging to the technical field of white light LED manufacturing. More specifically, it relates to an alternating current LED white light emitting device prepared using a luminescent material of a specific lifetime.
  • LED is used in the fields of illumination, display and backlight, and has attracted extensive attention due to its advantages of energy saving, durability and pollution-free.
  • white LEDs in which blue light LED chips and yellow phosphors are combined to realize white light emission, which is the most mature technical solution for preparing white LEDs.
  • Appl. Phys. Lett., Vol. 11, p. 53 reports the luminescent material Y 3 A1 5 0 12 : Ce 3+ , which has yellow luminescence, the strongest emission wavelength is 550 nm, and the lifetime is less than 100 nanoseconds. .
  • LEDs use direct current as the driving energy source. However, most of them are provided in the form of alternating current, whether it is household, industrial or commercial, or public power. Therefore, when using LEDs for lighting purposes, it is necessary to use a rectifier transformer to convert AC-DC. However, in the process of AC-DC conversion, there is up to 15 ⁇ 30% of power consumption, and at the same time, the equipment of the conversion device has a short service life and a considerable cost, and it is also time-consuming and inefficient in installation.
  • AND APPARATUS provides an AC LED device.
  • the invention is mainly to make the LED device of the integrated package work at a frequency higher than 100 Hz, and utilize the visual persistence effect of the human eye to compensate for the strobe of the LED device under AC work.
  • Chinese patent 200910307357. 3 invents a Y 2 0 3 *Al 2 0 3 *Si0 2 : Ce-B.Na.P luminescent material having a yellow long afterglow phenomenon and a white LED illumination device using the same.
  • CN100464111C discloses an alternating current of LED chips using different illuminating colors in an alternating current power source
  • LED lights mainly depicting LED chips of different colors together to form white light, and its specific circuits, such as red, green and blue light-emitting chips.
  • WO 2004/023568 A1 LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS
  • Seoul Semiconductor and Taiwan Industrial Technology Institute are based on the class Similar to the idea, a large number of ultra-fine LED dies are integrated and packaged on a substrate, and are called AC LED chips.
  • the core of the above-mentioned AC LED technology is a micro-electronic circuit processing technology with a large number of micro-die integrated packages.
  • the AC LED chip of the Taiwan Industrial Technology Research Institute integrates hundreds of tiny light-emitting diodes in an area of 1 square millimeter.
  • such an AC LED chip is difficult to process, and a large number of microchips integrated in a small substrate space may cause problems such as poor heat dissipation.
  • the technical problem to be solved by the present invention is to provide a new LED white light emitting device to solve the stroboscopic problem in the alternating current power supply mode, and at the same time solve a series of problems such as poor heat dissipation of the existing LED white light emitting device.
  • the technical solution of the present invention comprises: an LED white light emitting unit comprising an LED chip and a luminescent material capable of emitting light under excitation of the LED chip, wherein: the LED chip comprises only one luminescent PN junction, and the illuminating lifetime of the luminescent material is 1 to 100 ms, the afterglow of the luminescent material compensates for the luminance of the light when the chip is powered off, and the color of the light emitted by the LED chip and the light emitted by the luminescent material is white.
  • the LED white light emitting unit comprises an LED chip and a luminescent material capable of emitting light under excitation of the LED chip, the LED chip only includes one illuminating PN junction, and the illuminating material has an illuminating lifetime of 10-30 ms, and the LED chip emits The color of the light emitted by the light and the luminescent material is white.
  • the luminescence lifetime of the luminescent material is the time required for the luminescence intensity of the material to fall to 1/e of the maximum intensity at the time of excitation.
  • the LED white light emitting unit is driven by an alternating current having a frequency of not more than 100 Hz, especially an alternating current driving of 50-60 Hz, and can compensate for the luminance of the light when the chip is powered off by the afterglow of the luminescent material, and is driven by an alternating current. More practical.
  • the LED lighting unit of the invention does not use the existing multi-microchip integrated AC LED chip, and the LED chip using the ordinary single PN junction can solve the stroboscopic problem caused by the AC power source, and the production is simple and the cost is low.
  • the light emitted by the LED chip is ultraviolet or visible light.
  • the range of ultraviolet light is from 200 nm to 380 nm, and the range of visible light is from 380 nm to 780 nm.
  • the luminescent material emits light under the excitation of the LED chip, and the overall visual effect of the emitted light is white light, or the overall visual effect of the light emitted by the luminescent material and the light emitted by the chip is white light.
  • the luminescent material is at least one of the following materials: CaS: Eu 2+ ; CaS : Bi 2+ , Tm 3+ ; ZnS : Tb 3+ ; CaSrS 2 : Eu , Dy J+ ; SrGa 2 S 4 : Dy J+ ; Ga 2 0 3 : Eu ; (Y, Gd) B0 3 : Eu; Zn 2 Si0 4 : Mn ⁇ ; YB0 3 : Tb 3+ ; Y ( V,P)0 4 :Eu 3+ ; SrAl 2 0 4 :Eu 2+ ; SrAl 2 0 4 :Eu 2+ , B 3+ ; SrAl 2 0 4 :Eu 2+ , Dy 3+ , B 3+ ; Sr 4 Ali 4 0 2 5 : Eu 2+ , Dy 3+ , B 3+ ; BaAl 2 0 4 : Eu 2+ ; CaAI 2 0 4 :
  • Preferred materials are Ca 2 P 2 0 7 :Eu 2+ , Y 3+ ; Sr 2 P 2 0 7 :Eu 2+ , Y 3+ ; Sr4AI 14 025 :Eu 2+ , Dy 3+ , B 3+ ;
  • At least one of Zn 3 (P0 4 ) 2 Mn 2+ , Ga 3+ ; CaS : Eu 2+ .
  • each of the LED chips is an LED chip including only one light emitting PN junction.
  • the LED white light emitting device of the present invention comprises the above white light emitting unit and a driving circuit.
  • the AC drive circuit is a unidirectional series circuit, an anti-parallel circuit and a bridge rectifier circuit, as shown in Figure 1-4. Or a combination of any of the above circuits.
  • the alternating current drive circuit has a frequency of no more than 100 Hz.
  • the LED white light emitting device of the present invention further comprises a light guiding cover layer, which is a non-planar light guiding structure.
  • the illuminating of the LED chip and the illuminating material of the luminescent material are reflected, refracted, scattered and homogenized by the light guiding coating layer to finally obtain uniform light.
  • the light guiding cover layer is a lens or other transparent cover layer, wherein non-luminescent material particles having a particle diameter of less than 5 micrometers may be doped, so that the light output of the chip is evenly scattered.
  • the existing LED white light emitting device uses YAG: Ce as a light-emitting material, and a power frequency alternating current period change below 100 Hz causes a stroboscopic phenomenon.
  • the luminescent material having a specific luminescence lifetime is used, the luminescence can be maintained when the excitation light source disappears.
  • the luminescence of the luminescent material will occur in the cycle. Maintaining a certain period of time, thereby compensating for the influence of the strobe of the LED chip caused by the fluctuation of the alternating current, so that the light output of the white light emitting device during the alternating current period is kept stable.
  • the LED chip does not work for half a cycle during the AC cycle, its thermal effect is reduced, which helps to overcome the series of problems caused by chip heating in the existing LED white light emitting device.
  • FIG. 1 is a schematic diagram of a unidirectional series circuit of an alternating current LED white light emitting device of the present invention.
  • FIG. 2 is a schematic diagram of an anti-parallel circuit of an alternating current LED white light emitting device of the present invention.
  • FIG. 3 is a schematic diagram of a bridge rectifier circuit of an AC LED white light emitting device having a normally conducting LED chip.
  • 4 is a schematic diagram of a bridge rectifier circuit of an alternating current LED white light emitting device with an abnormal conduction LED chip.
  • 5 is a schematic diagram of the composition of an LED white light emitting unit, 1 is a light emitting material, or a light emitting layer composed of a light emitting material and a transparent medium; 2 is an LED chip.
  • Figure 6 is a color point of the embodiment 1-8 in the CIE 1931 chromaticity diagram.
  • the numbers 1_8 correspond to the embodiment 1_8, respectively.
  • the above content of the present invention will be further described in detail below by way of specific embodiments of the embodiments. However, the scope of the above-mentioned subject matter of the present invention should not be construed as being limited to the following examples, and all the techniques implemented based on the above-described contents of the present invention are within the scope of the present invention.
  • the embodiment of the present invention only gives the simplest reverse parallel circuit, but the circuit of the alternating current LED white light emitting device of the present invention is not limited thereto, and includes a unidirectional series circuit. And bridge rectifier circuit.
  • Embodiments 1-8 The LED white light emitting device obtained by using the general-purpose packaging technology using the luminescent material of Table 1 and a commercially available ordinary LED chip can solve the stroboscopic problem without using an integrated chip dedicated to the alternating current LED.
  • Test Example 1 Light-emitting characteristics of the AC LED white light-emitting device of the present invention
  • Table 2 shows the Sarnoff CAM512-type high-speed speed of the AC LED white light-emitting device of Example 1-8, which is driven by 50 Hz AC driving at 300 Hz per second. The brightness of the light emitted within 20 milliseconds of a scientific camera.
  • Reference sample 1 is a yellow luminescent material YAG: Ce (emission lifetime of 100 ns) on a commercially available 460 nm blue chip package.
  • the alternating current driving LED white light illuminating device is formed in the same manner as in the embodiment 1-8, and the reference sample 2 is a city.
  • the reference sample 1 that is, the LED white light-emitting device using the conventional yellow YAG: Ce luminescent material having a short luminescence lifetime on the commercially available blue chip package is unstable in luminescence, and fluctuates greatly in the alternating current period.
  • the present invention effectively solves the stroboscopic problem of the AC LED at low cost.
  • the illuminating brightness of the ac LED white light illuminating device fluctuates less during the alternating current period as shown in the reference 2, when the luminescent material having an excessive luminescence lifetime is used, the energy obtained by the material in the presence of the excitation light cannot be rapidly Release, resulting in weaker luminescence (see Table 1), is not conducive to use as a luminescent material.
  • Table 4 is the color coordinates and color temperature of the embodiment of Table 1 (measured using a Minolta CS-100A colorimeter)
  • Table 5 shows the light decay data for Examples 1-18 and the reference.
  • the reference sample is an LED white light emitting device in which a commercially available 460 nm blue chip is packaged with a white LED chip of YAG: Ce according to the current common DC power supply mode.
  • the test method is as follows: After the AC LED white light emitting device and the reference device described in the embodiment are energized, the brightness of the light is measured at a certain interval, and the test instrument is a Minolta CS-100 luminance meter. The results are shown in Table 5.
  • the data in Table 5 is relative brightness, dimensionless, normalized to the original data.
  • Example 8 Brightness 100 99. 3 99 98 It can be seen from the data in Table 5 that the luminance of the AC LED white light emitting device of the present invention is less than that of the conventional LED white light emitting device.

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  • Circuit Arrangement For Electric Light Sources In General (AREA)

Description

交流 LED白光发光装置 技术领域
本发明涉及一种交流 LED白光发光装置， 属于白光 LED制造技术领域。 更具体的 说， 涉及一种使用特定寿命的发光材料制备的交流 LED白光发光装置。
背景技术
目前， LED 用于照明、 显示和背光源等领域， 并以其节能、 耐用、 无污染等优点 而引起广泛的重视。 实现白光 LED 有多种方案，其中采用蓝光 LED 芯片和黄色荧光粉 组合来实现白光发射，是当前制备白光 LED 最为成熟的技术方案。 1967 年 《Appl. Phys. Lett.》第 11卷第 53页报道了发光材料 Y3A15012 : Ce3+, 该材料具有黄色 发光， 最强发光波长在 550纳米， 寿命小于 100纳秒。 1997年 《Appl. Phys. A》 第 64 期 417页报道了利用 Y3A15012 : Ce3+的黄色发光和蓝光氮化镓实现了 LED白光发射，此技 术是当前制备白光 LED最为成熟的技术方案。但在实际应用中，随着工作中器件温度的 升高，蓝光 LED芯片和荧光粉的发光强度都会下降，而且荧光粉的发光强度下降更为显 著， 这就影响了 LED的使用。
传统 LED都用直流电做为驱动能源， 然而目前不论是家庭、 工商业或公共用电， 大多以交流电的方式提供， 因此在使用 LED作为照明等用途时必须附带整流变压器将 交流 -直流转换。 但在交流-直流转换的过程中， 有高达 15〜30%的电力耗损， 同时转 换设备装置不仅使用寿命较短，成本也很可观， 在安装上也费工费时， 效率不高。
美国专利 US 7， 489， 086 B2 "AC LIGHT EITTING DIODE AND AC LED DRIVE METHODS
AND APPARATUS"提供了一种交流 LED器件， 该发明主要是使集成封装的 LED器件在高 于 100赫兹的频率下工作， 利用人肉眼的视觉暂留效应来弥补交流工作下 LED器件发 光的频闪。中国专利 200910307357. 3发明了一种具有黄色长余辉现象的 Y203*Al203*Si02： Ce-B.Na.P发光材料及使用它的白光 LED照明装置。
CN100464111C公布了一种利用不同发光颜色的 LED芯片并联在交流电源中的交流
LED灯， 主要描述不同颜色的 LED芯片在一起构成白光， 及其具体电路， 如红、 绿和 蓝色发光芯片。 国际专利 WO 2004/023568A1 " LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS" 中，提出了在蓝宝石基片上安装多个小的 LED芯片阵列， 从而提供一种可利用交流电源驱动的发光装置。 韩国首尔半导体和台湾工研院基于类 似思路， 将大量超细 LED晶粒集成封装在一个基片上， 并称之为交流 LED芯片。 上述 的交流 LED技术的核心是大量微晶粒集成封装的微电子电路加工技术， 如台湾工业技 术研究院的交流 LED芯片在 1平方毫米的面积上集成封装了上百颗微小的发光二极管。 但是此种交流 LED芯片的加工难度大， 且数量巨大的微晶片集成在狭小的基板空间内 会导致如散热不畅等问题。
为了实现 LED白光发光装置能够在交流电的方式供电的情况下， 克服频闪问题， 同时解决散热问题， 本领域技术人员一直在不懈地努力。
发明内容
本发明所要解决的技术问题在于提供一种新的 LED白光发光装置， 以解决在交流 供电的方式下的频闪问题， 同时解决现有 LED白光发光器件散热不畅等一系列问题。
本发明的技术方案： LED白光发光单元， 包括 LED芯片和能够在此 LED芯片激发下 发光的发光材料， 其特征在于： 所述 LED芯片只包含一个发光 PN结， 所述发光材料的 发光寿命是 1一 100ms, 通过发光材的余辉料弥补非恒流情况下， 芯片断电时的发光亮 度， LED芯片发出的光与发光材料发出的光的混合色为白色。
进一步地， LED白光发光单元， 包括 LED芯片和能够在此 LED芯片激发下发光的发 光材料， 所述 LED芯片只包含一个发光 PN结， 所述发光材料的发光寿命是 10-30ms， LED芯片发出的光与发光材料发出的光的混合色为白色。
根据发光学定义， 发光材料的发光寿命为材料发光强度降到激发时最大强度的 1/e 所需的时间。
上述 LED白光发光单元采用频率不大于 100赫兹的交流电驱动，尤其是 50-60赫兹 的交流电驱动，可以通过发光材的余辉料弥补非恒流情况下， 芯片断电时的发光亮度， 以交流电驱动更具实用性。
本发明 LED发光单元不使用现有的多颗微晶粒集成的交流 LED芯片， 而使用普通 的单一 PN结的 LED芯片可决交流电源引起的频闪问题， 生产简单、 成本低。
其中， LED芯片发出的光是紫外或可见光。 紫外光的范围为 200nm-380nm， 可见 光的范围为 380nm-780nm。
本发明中， 发光材料在 LED芯片的激发下发光， 且发出的光的整体视觉效果为白 光， 或发光材料发出的光和芯片发出的光的整体视觉效果为白光。
发光材料是下述材料中的至少一种： CaS: Eu2+; CaS:Bi2+,Tm3+; ZnS: Tb3+; CaSrS2: Eu ,DyJ+ ; SrGa2S4: DyJ+; Ga203: Eu ； (Y,Gd)B03:Eu ； Zn2Si04:Mn^; YB03:Tb3+; Y(V,P)04:Eu3+; SrAl204:Eu2+; SrAl204:Eu2+,B3+; SrAl204:Eu2+,Dy3+,B3+ ;
Figure imgf000005_0001
Sr4Ali4025:Eu2+,Dy3+,B3+ ; BaAl204:Eu2+; CaAI204:Eu2+;
Sr3Si05:Eu2+,Dy3+; BaMgAli0Oi7:Eu2+,Mn2+ ; Tb(acac)2(AA)phen; Y202S:Eu3+;
Y2Si05:Tb3+ ; SrGa2S4:Ce3+ ; Y3(Al,Ga)5012:Tb3+; Ca2Zn4 Ti15036:Pr3+; CaTi03:Pr3+; Zn2P207:Tm3+; Ca2P207:Eu2+,Y3+; Sr2P207:Eu2+,Y3+； Lu203:Tb3+; Sr2AI60":Eu2+; Mg2Sn04:Mn2+; CaAI204:Ce3+, Tb3+;
Figure imgf000005_0002
Ca10(PO4)6(F,Cl)2: Sb3+,Mn2; Sr2MgSi207:Eu2+; Sr2CaSi207:Eu2+; Zn3(P04)2:Mn2+,Ga3+ ; CaO:Eu3+; Y202S:Mg2+,Ti3+; Y202S: Sm3+ ; SrMg2(P04)2： Eu2+,Gd3+; BaMg2(P04)2： Eu2+,Gd3+; Zn2Si04: Mn2+,As5+; CdSi03:Dy3+ ; MgSi03:Eu2+,Mn2+。
优选材料为 Ca2P207:Eu2+,Y3+; Sr2P207:Eu2+,Y3+ ; Sr4AI14025:Eu2+,Dy3+,B3+ ;
SrAl204:Eu2+,Dy3+, B3+; Zn2Si04: Mn2+,As5+; Zn2P207:Tm3+; Y202S:Eu3+;
Figure imgf000005_0003
Zn3(P04)2:Mn2+,Ga3+; CaS:Eu2+中的至少一种。
本发明 LED白光发光单元中， 每个 LED芯片是只包含一个发光 PN结的 LED芯片。 本发明 LED白光发光装置包含上述白光发光单元和驱动电路。所述交流电驱动的 驱动电路是单向串联电路， 反向并联电路和桥式整流电路， 如图 1-4所示。 或上述电 路中任意电路的组合。 所述交流电流驱动电路频率不大于 100赫兹。
另外， 本发明 LED白光发光装置还包含导光覆盖层， 为非平面型导光结构。 通过 导光覆盖层将 LED芯片的发光和发光材料的发光进行反射、 折射、 散射并匀光最终混 合导出均匀一致的光。 其中， 所述导光覆盖层为透镜或其它透明覆盖层， 其中可以掺 有粒径小于 5微米的非发光材料颗粒， 从而使得芯片输出的更加光均匀散射。 本发明的有益效果：
现有 LED白光发光装置以 YAG: Ce作为发光材料， 在 100赫兹之下的工频交流电 周期变化会导致发光频闪现象。 本发明由于采用具有特定发光寿命的发光材料， 在激 发光源消失时能维持发光， 这样， 在基于本发明方案的交流 LED白光发光装置中， 当 电流周期变化时， 发光材料的发光在周期内会维持一定的时间， 从而弥补了由于交流 电波动导致的 LED芯片的发光频闪的影响， 使白光发光装置在交流周期的光输出保持 稳定。 另外， 由于在交流周期内 LED芯片有半个周期不工作， 使得其热效应下降， 这 样有助于克服现有 LED白光发光装置中芯片发热带来的系列难题。 说明书附图
图 1 本发明交流 LED白光发光装置单向串联电路示意图。
图 2 本发明交流 LED白光发光装置反向并联电路示意图。
图 3 本发明交流 LED白光发光装置有常导通 LED芯片的桥式整流电路示意图。 图 4 本发明交流 LED白光发光装置无常导通 LED芯片的桥式整流电路示意图。 图 5为 LED白光发光单元组成示意图， 1为发光材料， 或由发光材料和透明介质 组成的发光层； 2为 LED芯片。
图 6为实施例 1一 8在 CIE 1931色度图中的色点。数字 1_8分别对应于实施例 1_8。 以下通过实施例形式的具体实施方式， 对本发明的上述内容再作进一步的详细说 明。 但不应将此理解为本发明上述主题的范围仅限于以下的实例， 凡基于本发明上述 内容所实现的技术均属于本发明的范围。 特别是在基本电路组成上， 本发明的实施例 仅给出了最简单的反向并联式电路，但本发明的交流 LED白光发光装置的电路并不局 限于此， 还包括如单向串联电路和桥式整流电路。
具体实施方式
实施例 1-8采用表 1的发光材料和市售的普通 LED芯片，采用通用封装技术得到 的 LED白光发光装置， 无需采用专用于交流 LED的集成芯片， 即可解决频闪问题。 实施例 1-8 表 1
Figure imgf000006_0001
Figure imgf000007_0001
试验例 1 本发明交流 LED白光发光装置发光特性 表 2给出了实施例 1-8所给出的交流 LED白光发光装置在 50赫兹交流电驱动下用 每秒拍 300张照片的 Sarnoff 公司 CAM512型高速科学级照相机拍摄的 20毫秒内的发 光亮度。 参比样 1为市售 460纳米蓝光芯片封装上黄色发光材料 YAG : Ce (发光寿命为 100ns ) 按实施例 1-8 的同一方式组成的交流电流驱动 LED 白光发光装置， 参比样 2 为市售 460纳米蓝光芯片封装上长寿命材料 SrA1204： Eu, Dy和 Y202S： Eu, Mg， Ti (发光 寿命大于 1秒） 按实施例 1-8的同一方式组成的交流电流驱动 LED白光发光装置。 表 2中亮度数据为相对亮度， 无量纲。 表 2
时间 3. 33毫秒 6. 66毫秒 9. 99毫秒 13. 32毫秒 16. 65毫秒 19. 98毫秒 参比样 1亮度 2265 3466 0 2153 3570 0 参比样 2亮度 746 998 670 702 965 712 实施例 1亮度 2931 3025 1455 3187 3443 1665 实施例 2亮度 3140 3373 1654 2884 3437 1877 实施例 3亮度 3200 3423 1506 3135 3362 1656 实施例 4亮度 2910 3190 1652 2723 3245 1850 实施例 5亮度 2250 2734 1468 2114 2800 1420 实施例 6亮度 2109 2636 1150 2213 2858 1163 实施例 7亮度 2017 2420 1569 2115 2654 1510 实施例 8亮度 1879 2000 1270 1746 2123 1303 表 3给出了表 2实施例中各样品对本样品最大发光亮度的归一化值。
Figure imgf000008_0001
参比样 1 0. 63445 0. 97087 0 0. 60308 1 0
参比样 2 0. 74749 1 0. 67134 0. 70341 0. 96693 0. 71343 实施例 1 0. 85129 0. 87859 0. 4226 0. 92565 1 0. 48359 实施例 2 0. 91359 0. 98138 0. 48123 0. 8391 1 0. 54612 实施例 3 0. 93485 1 0. 43996 0. 91586 0. 98218 0. 48379 实施例 4 0. 89676 0. 98305 0. 50909 0. 83914 1 0. 57011 实施例 5 0. 80357 0. 97643 0. 52429 0. 755 1 0. 50714 实施例 6 0. 73793 0. 92232 0. 40238 0. 77432 1 0. 40693 实施例 Ί 0. 75998 0. 91183 0. 59118 0. 79691 1 0. 56895 实施例 8 0. 88507 0. 94206 0. 59821 0. 82242 1 0. 61375 从表 2和表 3可以看出， 本发明在交流电流周期中的发光较为稳定， 在交流电周 期内起伏较小。 而参比样 1亦即使用现有市售蓝光芯片封装上发光寿命较短的传统的 黄色 YAG: Ce发光材料的 LED白光发光装置获得的发光不稳定， 在交流电周期内起伏 极大。 由此可见， 本发明有效地， 低成本地解决了交流 LED的频闪问题。
虽然如参比样 2所示的、 使用发光寿命过长的发光材料时该交流 LED白光发光装 置的发光亮度在交流电周期内波动也较小， 但由于材料在激发光存在时获得的能量不 能迅速释放， 导致其发光较弱 （见表 1 )， 不利于作为发光材料使用。
表 4是表 1实施例的色坐标和色温 （采用美能达 CS-100A色度计测量）
CIE色坐标和色温
色坐标 CIEx CIEy 相关色温 实施例 1 0. 4076 0. 3807 3312K 实施例 2 0. 3410 0. 3102 4997K 实施例 3 0. 3279 0. 2939 5725K 实施例 4 0. 3320 0. 3210 5496K 实施例 5 0. 3802 0. 3566 3815K 实施例 6 0. 3503 0. 3002 4441K 实施例 Ί 0. 3104 0. 3154 6746K 实施例 8 0. 3484 0. 3516 4867K 从表 4可以看出， 上述实施例得到了 LED白光发光装置的发光颜色为白光。 各实 施例发光在 CIE 1931色度图中的色点位置见图 6。
试验例 2本发明交流 LED白光发光装置的光衰
表 5给出了实施例 1一 18和参比样的光衰数据。 参比样为将市售 460纳米蓝光芯 片封装上 YAG: Ce的白光 LED芯片按目前通用的直流供电方式安装的 LED白光发光装 置。 测试方法如下： 将实施例所述交流 LED白光发光装置和参比装置通电后在一定间 隔时间内测其发光亮度， 测试仪器为美能达 CS-100亮度计。 结果如表 5所示。 表 5 中数据为相对亮度， 无量纲， 以最初数据归一化。
表 5 时间 1小时 1000小时 1500小时 2500小时
参比样亮度 100 98 97. 1 96. 3 实施例 1亮度 100 99. 8 99. 5 99. 1
实施例 2亮度 100 99. 5 99. 4 99. 3 实施例 3亮度 100 99. 6 99. 5 99
实施例 4亮度 100 99. 7 99. 3 99
实施例 5亮度 100 99. 8 99. 4 98. 6
实施例 6亮度 100 99. 5 99 98
实施例 7亮度 100 99. 4 99 98. 3
实施例 8亮度 100 99. 3 99 98 从表 5的数据可以看出本发明的交流 LED白光发光装置的亮度衰减要小于采用现 有方式的 LED白光发光装置。

Claims

权利要求书
1、 LED白光发光单元，包括 LED芯片和能够在此 LED芯片激发下发光的发光材料， 其特征在于： 所述 LED芯片只包含一个发光 PN结， 所述发光材料的发光寿命是 1一 100ms, 通过发光材料的余辉弥补非恒流情况下的发光亮度， LED芯片发出的光与发光 材料发出的光的混合色为白色。
2、如权利要求 1所述的 LED白光发光单元， 其特征在于： 所述 LED芯片采用频率 不大于 100赫兹的交流电驱动， 优选 50-60赫兹的交流电驱动。
3、如权利要求 2所述的 LED白光发光单元， 其特征在于： 所述的发光材料的发光 寿命是 10〜30ms。
4、如权利要求 2或 3所述的 LED白光发光单元，其特征在于： 所述发光材料是: CaS: Eu2+; CaS:Bi2+,Tm3+; ZnS: Tb3+; CaSrS2: Eu2+,Dy3+; SrGa2S4: Dy3+; Ga203: Eu3+; (Y,Gd)B03:Eu3+; Zn2Si04:Mn2+ ; YB03:Tb3+; Y(V,P)04:Eu3+; SrAl204:Eu2+;
SrAl204:Eu2+,B3+ ; SrAl204:Eu2+,Dy3+,B3+ ;
Figure imgf000010_0001
BaAl204:Eu2+ ; CaAI204:Eu2+; Sr3Si05:Eu2+,Dy3+; BaMgAl10O17:Eu2+,Mn2+;
Tb(acac)2(AA)phen; Y202S:Eu3+; Y2Si05:Tb3+; SrGa2S4:Ce3+; Y3(Al,Ga)5012:Tb3+;
Ca2Zn4 Tii5036:Pr3+; CaTi03:Pr3+ ; Zn2P207:Tm3+; Ca2P207:Eu2+,Y3+; Sr2P207:Eu2+,Y3+；
Lu203:Tb3+ ; Sr2AI60":Eu2+; Mg2Sn04:Mn2+; CaAI204:Ce3+, Tb3+ ; Sr4Ali4025:Tb3+;
Ca10(PO4)6(F,Cl)2: Sb3+,Mn2 ; Sr2MgSi207:Eu2+ ; Sr2CaSi207:Eu2+ ; Zn3(P04)2:Mn2+,Ga3+ ; CaO:Eu3+ ; Y202S:Mg2+,Ti3+ ; Y202S:Sm3+; SrMg2(P04)2:Eu2+,Gd3+ ; CdSi03:Dy3+ ;
BaMg2(P04)2： Eu2+,Gd3+; Zn2Si04: Mn2+,As5+; MgSi03:Eu2+,Mn2+中的一种或多种混合。
5、 如权利要求 4 所述的 LED 白光发光单元， 其特征在于： 所述发光材料是： Ca2P207:Eu2+,Y3+; Sr2P207:Eu2+,Y3+;
Figure imgf000010_0002
SrAl204:Eu2+,Dy3+,B3+ ; Zn2Si04: Mn2+,As5+ ; Zn2P207:Tm3+; Y202S:Eu3+; Sr^ ^s b^; Zn3(P04)2:Mn2+,Ga3+; CaS:Eu2+中的一种或多种混合。
6、 如权利要求 2所述的 LED白光发光单元， 其特征在于： LED芯片发出的光是紫 外或可见光， 紫外光的范围为 200nm-380nm， 可见光的范围为 380nm_780nm。
7、交流 LED白光发光装置， 其特征在于： 包括交流驱动电路和至少一个 LED白光 发光单元； 所述 LED白光发光单元是权利要求 1〜6任一项所述的 LED白光发光单元； 其中， 所述的驱动电路是单向串联电路、 反向并联电路、 桥式整流电路， 或它们 的任意组合。
8、 如权利要求 7所述的交流 LED白光发光装置， 其特征在于： LED发光装置还包 括导光覆盖层。
9、根据权利要求 8所述的交流 LED白光发光装置， 其特征在于： 所述导光覆盖层 中掺有粒径小于 5微米的非发光材料颗粒。
10、 包括 LED芯片和能够在此 LED芯片激发下发光的发光材料的发光单元在制备 交流 LED发光装置中的用途， 其中所述发光材料的发光寿命是 l〜100ms， 通过发光材 料弥补非恒流情况下的发光亮度， 所述 LED芯片是只包含一个发光 PN结的 LED芯片， LED芯片发出的光与发光材料发出的光的混合色为白色。
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