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WO2011111944A3 - 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자 - Google Patents

나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자 Download PDF

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Publication number
WO2011111944A3
WO2011111944A3 PCT/KR2011/001423 KR2011001423W WO2011111944A3 WO 2011111944 A3 WO2011111944 A3 WO 2011111944A3 KR 2011001423 W KR2011001423 W KR 2011001423W WO 2011111944 A3 WO2011111944 A3 WO 2011111944A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanowire
electronic device
manufacturing
catalyst pattern
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/001423
Other languages
English (en)
French (fr)
Other versions
WO2011111944A2 (ko
Inventor
주상현
서미숙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry Academic Cooperation Foundation of Kyonggi University
Original Assignee
Industry Academic Cooperation Foundation of Kyonggi University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industry Academic Cooperation Foundation of Kyonggi University filed Critical Industry Academic Cooperation Foundation of Kyonggi University
Publication of WO2011111944A2 publication Critical patent/WO2011111944A2/ko
Publication of WO2011111944A3 publication Critical patent/WO2011111944A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

Landscapes

  • Luminescent Compositions (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

본 발명은 제조 공정을 단순화시킬 수 있으며, 나노 와이어가 불필요한 위치에 형성되어 전기적인 단락을 발생시키는 문제를 방지할 수 있는 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자에 관한 것이다. 일례로, 기판 상에 촉매 패턴을 형성하는 촉매 패턴 형성 단계; 및 나노 물질을 상기 촉매 패턴에 증착시켜 상기 촉매 패턴으로부터 수평 방향 또는 수직 방향으로 성장시키는 나노 물질 성장 단계를 포함하는 나노 와이어 제조 방법이 개시된다.
PCT/KR2011/001423 2010-03-08 2011-03-02 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자 Ceased WO2011111944A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100020203A KR101200150B1 (ko) 2010-03-08 2010-03-08 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자
KR10-2010-0020203 2010-03-08

Publications (2)

Publication Number Publication Date
WO2011111944A2 WO2011111944A2 (ko) 2011-09-15
WO2011111944A3 true WO2011111944A3 (ko) 2012-02-23

Family

ID=44563962

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/001423 Ceased WO2011111944A2 (ko) 2010-03-08 2011-03-02 나노 와이어 제조 방법 및 나노 와이어를 갖는 전자 소자

Country Status (2)

Country Link
KR (1) KR101200150B1 (ko)
WO (1) WO2011111944A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101327262B1 (ko) * 2012-07-10 2013-11-08 한국에너지기술연구원 세라믹 지지체 표면에 산화금속 나노와이어를 합성하는 방법 및 이로부터 합성한 산화금속 나노와이어
US9112432B2 (en) 2012-12-14 2015-08-18 Samsung Electronics Co., Ltd. Piezoelectric generator and method of manufacturing the same
CN104701284B (zh) * 2013-12-05 2017-12-29 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
KR102395778B1 (ko) 2015-09-10 2022-05-09 삼성전자주식회사 나노구조체 형성방법과 이를 적용한 반도체소자의 제조방법 및 나노구조체를 포함하는 반도체소자
KR102209689B1 (ko) 2015-09-10 2021-01-28 삼성전자주식회사 음향 모델 생성 장치 및 방법, 음성 인식 장치 및 방법
KR101760604B1 (ko) 2016-02-16 2017-07-31 조선대학교산학협력단 수평 배열 ito 나노와이어의 제조방법
KR102147276B1 (ko) * 2019-01-17 2020-08-24 연세대학교 산학협력단 Mems 플랫폼과 전기방사법을 이용한 현수형 나노와이어의 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050176228A1 (en) * 2003-12-11 2005-08-11 Fonash Stephen J. Controlled nanowire growth in permanent, integrated nano-templates and methods of fabricating sensor and transducer structures
US20100029063A1 (en) * 2007-01-16 2010-02-04 Northrop Grumman Space & Mission Systems Corporation Carbon nanotube fabrication from crystallography oriented catalyst

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3859199B2 (ja) 2000-07-18 2006-12-20 エルジー エレクトロニクス インコーポレイティド カーボンナノチューブの水平成長方法及びこれを利用した電界効果トランジスタ
KR100699948B1 (ko) 2005-03-26 2007-03-26 재단법인서울대학교산학협력재단 나노 와이어 또는 나노 튜브의 선택적 성장을 위한 촉매물질 양자점 배열방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050176228A1 (en) * 2003-12-11 2005-08-11 Fonash Stephen J. Controlled nanowire growth in permanent, integrated nano-templates and methods of fabricating sensor and transducer structures
US20100029063A1 (en) * 2007-01-16 2010-02-04 Northrop Grumman Space & Mission Systems Corporation Carbon nanotube fabrication from crystallography oriented catalyst

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KHAKANI, MY ALI EL ET AL.: "Localized growth of suspended SWCNTs by means of an ''All-Laser'' process and their direct integration into nanoelectronic devices.", IEEE TRANSACTIONS ON NANOTECHNOLOGY., vol. 5, no. 3, May 2006 (2006-05-01), pages 237 - 242 *
SHAN, YINGHUI ET AL.: "Self-assembling silicon nanowires for device applications using the nanochannel-guided ''Grow-in-place'' approach.", ACS NANO., vol. 2, no. 3, 2008, pages 429 - 434 *

Also Published As

Publication number Publication date
WO2011111944A2 (ko) 2011-09-15
KR20110101287A (ko) 2011-09-16
KR101200150B1 (ko) 2012-11-12

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