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WO2011024968A1 - Élément optique - Google Patents

Élément optique Download PDF

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Publication number
WO2011024968A1
WO2011024968A1 PCT/JP2010/064633 JP2010064633W WO2011024968A1 WO 2011024968 A1 WO2011024968 A1 WO 2011024968A1 JP 2010064633 W JP2010064633 W JP 2010064633W WO 2011024968 A1 WO2011024968 A1 WO 2011024968A1
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WIPO (PCT)
Prior art keywords
semiconductor
strain
light guide
light source
optical element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2010/064633
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English (en)
Japanese (ja)
Inventor
一実 和田
靖彦 石川
幸平 吉本
優 堀江
亮太 鈴木
靖楠 蔡
理士 平勢
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University of Tokyo NUC
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University of Tokyo NUC
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Publication date
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Priority to JP2011528879A priority Critical patent/JP5586103B2/ja
Publication of WO2011024968A1 publication Critical patent/WO2011024968A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Definitions

  • the present invention relates to an optical element on which a semiconductor light guide light source or semiconductor optical amplifier having a variable wavelength is mounted, and a method for manufacturing the optical element.
  • optical element using a silicon integrated circuit has been proposed.
  • electric circuits and optical circuits such as a light source, a modulator, an optical waveguide, a filter, and a light receiver are integrated on a silicon substrate.
  • the temperature of the optical element may be ⁇ 20 ° C. depending on the environmental temperature, and may rise to about 85 ° C. due to heat generation of the electric circuit and the optical circuit. Due to the refractive index of the optical circuit material and the temperature dependence of the forbidden band, the wavelength of the optical element changes when the temperature of the optical circuit changes.
  • the optical element of Patent Document 1 includes an active layer, an absorption light modulation layer, and a resonator, and operates as follows.
  • the active layer excites laser light.
  • the absorptive light modulation layer performs modulation using a change in a light absorption coefficient due to voltage application.
  • the resonator resonates light with two light reflection layers sandwiching the active layer and the light modulation layer.
  • a cantilever beam that warps when the temperature changes is used, and the distance between the two light reflecting layers is changed by using this warp to suppress the wavelength change due to the temperature change of the optical element.
  • the forbidden band of the active layer is not controlled.
  • Patent Document 1 since the change in the resonator length is large, there is a problem that the wavelength change of the optical element is large, and it is difficult to finely adjust the wavelength of the optical element.
  • An object of the present invention is to provide an optical element capable of finely adjusting an oscillation wavelength and a method for manufacturing the optical element, which are the problems described above.
  • an optical element of the present invention includes a substrate made of a semiconductor or a conductor, an insulator layer from which a part is removed, and a semiconductor layer having a beam shape on the upper surface of the part from which the insulator layer is removed. And a semiconductor light guide light source or semiconductor optical amplifier formed on the upper surface of the beam, and oscillation of the semiconductor light guide light source or semiconductor optical amplifier according to the amount of strain applied by the strain applying part. Variable wavelength.
  • a power source that varies an amount of strain applied by the strain applying unit by applying an electric field between the substrate and the semiconductor layer, a variable circuit that varies an electric field applied by the power source, It is preferable to further comprise.
  • the optical element of the present invention preferably further includes a temperature sensor for measuring the temperature of the beam, and the variable circuit varies the electric field applied by the power source in accordance with the temperature measured by the temperature sensor.
  • the semiconductor layer has two beams, and the two beams are formed so as to be substantially orthogonal to each other and intersect in the middle.
  • the beam includes a plurality of blades extending in different directions with each part being substantially centered, and the semiconductor light guide light source or the semiconductor optical amplifier is formed in the part. preferable.
  • the optical element of the present invention it is preferable that at least a part of the beam in the longitudinal direction is thin, and the semiconductor light guide light source or the semiconductor optical amplifier is formed in the thin part.
  • the optical element of the present invention it is preferable that at least a part of the beam in the longitudinal direction is thin, and the semiconductor light guide light source or the semiconductor optical amplifier is formed in the thinned part.
  • the optical element manufacturing method of the present invention includes a stacking step of sequentially stacking a substrate made of a semiconductor or a conductor, an insulator layer, and a semiconductor layer, a semiconductor layer removing step of removing a part of the semiconductor layer, and the insulator layer Of the semiconductor layer, the portion exposed by the semiconductor layer removing step and the peripheral portion thereof are removed by wet etching to form a recess, and the insulator layer removing step of the semiconductor layer is pushed out by the insulator layer removing step A beam shape forming step for dry etching the edges of the recesses while leaving the beam shape.
  • the 2nd example of a measurement of a distortion is shown, (a) shows maximum principal distortion, (b) shows distortion of the cross direction of a beam, and (c) shows distortion of the length direction of a beam. It is a simulation result of the distortion
  • the distribution of strain in the length direction of the beam is shown.
  • the 1st modification of the beam 31 is shown.
  • the 2nd modification of the beam 31 is shown.
  • the 3rd modification of the beam 31 is shown.
  • the 4th modification of the beam 31 is shown.
  • the 5th modification of the beam 31 is shown.
  • An example of the relationship between the forbidden band of the semiconductor and the band for optical communication with respect to the strain amount is shown.
  • An example of the cross-sectional structure of the strain imparting portion when Ge is used for the semiconductor layer is shown.
  • FIG. 9B is an example of a cross-sectional view taken along the line BB ′ of the strain imparting portion in the manufacturing process according to Embodiment 6, where (a) shows the state after the semiconductor layer removal step, and (b) shows the state after the insulator layer removal step. (C) shows the state after the beam shape forming step.
  • FIG. 1 is a schematic configuration diagram illustrating an example of an optical element according to the present embodiment.
  • the optical element according to the embodiment of the present invention includes a strain applying unit 11 and a semiconductor light guide light source 12.
  • the strain applying unit 11 includes a substrate 21 made of a semiconductor or a conductor, an insulator layer 22 from which a part has been removed, and a semiconductor layer 23 having a beam 31 shape on the upper surface of the part from which the insulator layer has been removed. Have in order. If an electric field is applied between the substrate 21 and the semiconductor layer 23, the distance between the beam 31 formed in the semiconductor layer 23 and the substrate 21 can be changed.
  • the strain applying unit 11 includes a substrate 21 made of Si, an insulator layer 22 made of SiO 2 , and a semiconductor layer 23 made of Si.
  • the substrate 21 may be an SOI (Silicon On Insulator) substrate.
  • the strain applying unit 11 may include a substrate 21 made of GaAs, an insulator layer 22 made of Al 2 O 3 , and a semiconductor layer 23 made of GaAs.
  • the insulator layer 22 made of Al 2 O 3 can be formed by laminating AlGaAs on the upper surface of the substrate 21 and oxidizing the AlGaAs.
  • the shape of the beam 31 can be formed by selectively chemically etching AlGaAs.
  • the semiconductor layer 23 can be formed using GaAs suitable for a light source.
  • the beam 31 is, for example, a cantilever with one end fixed. In the case of a cantilever, it is preferable that the other open end is in contact with the substrate 21. Thereby, the natural vibration of the beam 31 can be suppressed. Further, the beam 31 may be a both-end fixed beam fixed at both ends. By adopting the both-end fixed beam, the natural vibration of the beam 31 can be suppressed.
  • FIG. 2 is a longitudinal sectional view of the optical element.
  • FIG. 2 shows a cross section A-A ′ shown in FIG. 1.
  • the substrate 21 and the beam 31 are opposed to each other.
  • the beam 31 can be distorted.
  • the light emission wavelength of the semiconductor light guide light source 12 is varied.
  • the optical element according to the present embodiment applies an electric field between the substrate 21 and the semiconductor layer 23 to vary the amount of strain applied by the strain applying unit 11, and varies the electric field applied by the power source. And a variable circuit 52.
  • the strain amount of the beam 31 can be varied using the variable circuit 52. As a result, light having a desired oscillation wavelength can be generated in the semiconductor light guide light source 12.
  • the optical element according to the present embodiment may further include a temperature sensor 53 that measures the temperature of the beam 31.
  • the variable circuit 52 varies the electric field applied by the power source 51 according to the temperature measured by the temperature sensor 53.
  • the temperature sensor 53 measures the temperature change, and the variable circuit 52 changes the electric field applied by the power source 51 so as to return the wavelength change of the semiconductor light guide light source 12. Therefore, the wavelength of the semiconductor light guide light source 12 can be kept constant by varying the strain amount of the beam 31 according to the temperature of the beam 31.
  • the temperature sensor 53 is preferably arranged in the vicinity of the semiconductor light guide light source 12.
  • the semiconductor light guide light source 12 is, for example, a semiconductor rib type light guide light source.
  • the semiconductor rib-type light guide light source is a light emitting diode that has a pn junction in a direction orthogonal to the light propagation direction through the rib light guide and emits light from the light guide by flowing a forward current.
  • the semiconductor light guide light source 12 amplifies the emitted light with a resonator and takes out the light from the rib light guide.
  • the rib light guide is provided with a rib light source light guide that emits light.
  • the rib light source light guide is made of a semiconductor having an optical gain.
  • the semiconductor having optical gain is, for example, a group III-V semiconductor such as GaAs, Ge. It may be an indirect transition semiconductor such as n-Ge.
  • a portion of the rib light guide path excluding the rib light source light guide path is formed of a semiconductor having no optical gain, and guides light emitted from the rib light source light guide path. Thereby, the light emitted from the rib light source light guide can be extracted.
  • the semiconductor having no optical gain is, for example, Si, Ge, SiON, or SiN x .
  • the rib light guide may be a laminated rib light guide having a two-layer structure.
  • one layer is formed of a semiconductor having optical gain
  • the other layer is formed of a semiconductor having no optical gain.
  • the resonator may be a Fabry-Perot resonator, a ring resonator, or a photonic crystal.
  • a Fabry-Perot resonator for example, a pair of mirrors arranged opposite to two locations in the propagation direction of the propagation light of the rib light guide is formed, and light is reflected by repeating light reflection between the pair of mirrors. Resonate.
  • a ring resonator a ring resonator is formed at a position where it is coupled to the rib light guide, and light propagates through the rib light guide to resonate the light.
  • a photonic crystal light is resonated by forming the photonic crystal in the rib light guide.
  • the rib light source light guide preferably has a quantum well structure.
  • the quantum well structure may be a single quantum well structure or a multiple quantum well structure. Thereby, the threshold value of the semiconductor rib type light guide light source can be lowered.
  • the rib light guide provided in the semiconductor light guide light source 12 is distorted.
  • the forbidden band changes according to the strain amount of the rib light guide.
  • the oscillation wavelength of the semiconductor light guide light source 12 can be varied according to the strain applied by the strain applying section 11. Therefore, it is possible to provide an optical element capable of finely adjusting the oscillation wavelength.
  • the semiconductor rib type light guide light source has been described as an example of the semiconductor light guide light source 12, but a semiconductor light guide light source having an arbitrary semiconductor structure that is not a rib type can also be used.
  • the position and number of the semiconductor light guide light sources 12 formed on the upper surface of the beam 31 are not limited. As will be described later, even when the beam 31 is formed of the same material, the amount of strain varies depending on the position of the beam 31. For this reason, when the position of the semiconductor light guide light source 12 formed on the upper surface of the beam 31 is different, it is possible to provide a light source that emits light at different wavelengths.
  • the semiconductor light guide light source 12 is formed on the upper surface of the beam 31
  • a semiconductor optical amplifier may be formed on the upper surface of the beam 31 instead of the semiconductor light guide light source 12.
  • the current flowing through the semiconductor light guide light source 12 is set to be equal to or less than the threshold current at which the semiconductor light guide light source 12 performs laser oscillation.
  • the semiconductor light guide light source 12 can be used as a semiconductor optical amplifier.
  • FIG. 3 is an example of a semiconductor forbidden band with respect to the strain amount.
  • a forbidden band change when a two-dimensional strain is introduced into GaAs which is one of semiconductors having optical gain is shown.
  • the conduction band Ec increases in energy as GaAs contracts and decreases in energy as GaAs extends.
  • the valence band Elh there is not much energy change even when GaAs contracts, and the energy increases as GaAs expands.
  • the semiconductor constituting the rib light guide is GaAs and strain is applied to the beam 31 shown in FIG. 2 in the direction in which the substrate 21 and the beam 31 approach each other.
  • the semiconductor light guide light source 12 since the semiconductor light guide light source 12 is formed on the upper surface of the beam 31, the rib light guide of the semiconductor light guide light source 12 is strained in the extending direction.
  • the energy gap between the conduction band Ec and the valence band Elh of the rib light guide becomes narrower than when the beam 31 is not distorted, and the emission wavelength in the rib light guide becomes longer. Therefore, the wavelength of the semiconductor light guide light source 12 can be shifted to the longer wavelength side by applying strain to the beam 31 in the direction in which the substrate 21 and the beam 31 approach each other as shown in FIG.
  • the semiconductor constituting the rib light guide is GaAs and the beam 31 shown in FIG. 2 is strained in the direction in which the substrate 21 and the beam 31 move away from each other.
  • the semiconductor light guide light source 12 is formed on the upper surface of the beam 31, the rib light guide of the semiconductor light guide light source 12 is distorted in the shrinking direction.
  • the energy gap between the conduction band Ec and the valence band Elh of the rib light guide is wider than when the beam 31 is not distorted, and the emission wavelength in the rib light guide is shortened. Therefore, the wavelength of the semiconductor light guide light source 12 can be shifted to the short wavelength side by applying strain to the beam 31 in the direction in which the substrate 21 and the beam 31 shown in FIG. 2 move away from each other.
  • the semiconductor light guide light source 12 is formed on, for example, the upper surface of the fulcrum of the beam 31 or the upper surface of the tip of the beam 31.
  • the strain generated in the beam 31 is larger in the order of the fulcrum, the tip, and other parts of the beam 31. For this reason, if the semiconductor light guide light source 12 is formed on the upper surface of the fulcrum, a large amount of strain can be applied to the semiconductor light guide light source 12.
  • FIG. 4 is a schematic configuration diagram showing another form of the strain applying unit according to the present embodiment.
  • the semiconductor layer 23 has two beams 31a and 31b.
  • the two beams 31a and 31b are formed so as to be substantially orthogonal to each other and intersect each other in the middle.
  • the semiconductor light guide light source 12 is disposed at a portion where the beam 31a and the beam 31b intersect. For this reason, two-dimensional distortion can be generated in the semiconductor light guide light source 12.
  • the amount of distortion of each of the beams 31a and 31b can be reduced when the energy of the forbidden band of the rib light guide in the semiconductor light guide 12 is changed.
  • FIG. 5 is an explanatory view showing an example of a method for producing a strain imparting portion according to the present embodiment, in which (a) shows the first step, (b) shows the second step, and (c) shows the third step. A process is shown.
  • the substrate 21, the insulator layer 22, and the semiconductor layer 23 are sequentially stacked. Then, a resist layer 41 is formed on the semiconductor layer 23 in accordance with the shape of the beam.
  • the insulator layer 22 is formed using thermal oxidation that forms a silicon oxide film (SiO 2 ) by exposing Si heated to a high temperature to an oxidizing atmosphere and chemically reacting Si and oxygen or Si and moisture. be able to.
  • a rib light guide In addition to the shape of the beam, it is preferable to form a rib light guide.
  • the semiconductor layer 23 is etched.
  • the insulator layer 22 is etched. Thereby, the distortion provision part 11 shown in FIG. 1 is producible. At this time, it is preferable to perform wet etching so as to obtain an undercut. Thereby, the insulator layer 22 laminated under the beam can be removed.
  • a semiconductor light guide light source (reference numeral 12 shown in FIG. 1) is formed on the upper surface of the beam.
  • a semiconductor light guide light source (reference numeral 12 shown in FIG. 1) is formed on the upper surface of the beam.
  • a thin film of a light emitting material is grown on the beam.
  • the amount of strain applied to the beam 31 is changed by applying an electric field between the substrate 21 and the semiconductor layer 23, but the present invention is not limited to this.
  • a mechanical method of pressing at least a part of the beam 31 may be used.
  • a piezoelectric element such as a piezoelectric element is used.
  • the beam 31 is bent by bringing the piezoelectric element into close contact with one side or both sides of the beam 31 and expanding and contracting the piezoelectric element.
  • Embodiment 2 In Embodiment 1, although the example in which the beam 31 is a rectangular parallelepiped was demonstrated, it can be set as arbitrary shapes. For example, the width and height of the beam 31 shown in FIG. 1 may be non-uniform.
  • FIG. 11 shows a first modification of the beam 31.
  • the beam 301 shown in FIG. 11 has a thin at least part 71 in the longitudinal direction.
  • the width W 2 of the portion 71 is narrower than the width W 1 of the tip portion of the beam 301.
  • the semiconductor light guide light source 12 shown in FIG. 1 or a semiconductor optical amplifier (not shown) is formed in a part 71. Thereby, even when the amount of deflection of the beam 301 is small, the wavelength of the semiconductor light guide light source 12 shown in FIG. 1 or the semiconductor optical amplifier (not shown) can be varied efficiently.
  • the semiconductor light guide light source 12 shown in FIG. 1 or a semiconductor optical amplifier (not shown) is preferably within the range of part 71. The same applies to the following embodiments.
  • the shape of the beam 301 can be formed by masking in accordance with the shape of the beam 301 when the semiconductor layer (reference numeral 23 shown in FIG. 1) is etched.
  • the shape of the beam 301 can be accurately formed by using a manufacturing method that executes a beam shape forming step after the insulator layer removing step, which will be described later.
  • FIG. 12 shows a second modification of the beam 31.
  • FIG. 12 is a cross-sectional view taken along the line AA ′.
  • the beam 302 shown in FIG. 12 at least a portion 71 in the longitudinal direction is thin.
  • the height H 2 of the portion 71 is lower than the height H 1 of the tip portion of the beam 302.
  • the semiconductor light guide light source 12 shown in FIG. 1 or a semiconductor optical amplifier (not shown) is formed in a part 71. Thereby, even when the amount of deflection of the beam 302 is small, the wavelength of the semiconductor light guide light source 12 shown in FIG. 1 or the semiconductor optical amplifier (not shown) can be varied efficiently.
  • the shape of the beam 302 can be formed by shortening the growth time of the part 71 when the semiconductor layers (reference numeral 23 shown in FIG. 1) are stacked.
  • the beam 31 shown in FIG. 1 may have a portion 71 that is thin and thin.
  • Embodiment 3 In Embodiment 1, although the structure where the beam 31 consists of one blade
  • the beam 31 illustrated in FIG. 1 may have a structure including a plurality of blades.
  • FIG. 13 shows a third modification of the beam 31.
  • the beam 303 shown in FIG. 13 includes a blade 61-1, a blade 61-2, and a blade 61-3.
  • the blades 61-1, 61-2, and 61-3 extend in different directions with the portion 72 as a substantial center.
  • the semiconductor light guide light source 12 shown in FIG. 1 or a semiconductor optical amplifier (not shown) is formed.
  • the strain that occurs when the blades 61-1, 61-2, and 61-3 are simultaneously deflected is less than the strain that occurs in the portion 72 when the blade 61-1 is bent.
  • the amount of strain in the portion 72 increases. For this reason, the beam 303 can increase the variable range of the amount of strain generated in the part 72.
  • At least a part 72 of the blades 61-1, 61-2, and 61-3 is thin in the longitudinal direction.
  • the wavelength of the part 72 of the semiconductor light guide light source 12 shown in FIG. 1 or the semiconductor optical amplifier (not shown) can be varied efficiently.
  • FIG. 14 shows a fourth modification of the beam 31.
  • the beam 304 shown in FIG. 14 includes a blade 62-1, a blade 62-2, and a blade 62-3.
  • the blade 62-1, the blade 62-2, and the blade 62-3 extend in different directions with the portion 72 as a substantial center. At least a portion 72 of the blade 62-1, blade 62-2, and blade 62-3 is thin in the longitudinal direction. Thereby, the variable range of the distortion amount generated in the part 72 can be increased.
  • the substantially central portions in the width direction of the blades 62-1, 62-2, and 62-3 are uniformly thinned.
  • a substantially central portion 63-1 in the width direction of the blade 62-1, as the height H 2 of FIG. 12, is thinner than the height H 1 of the other part. And it has a height H 2 also vanes 62-2 and blade 62-3.
  • the portion 72 becomes thin, the wavelength of the semiconductor light guide light source 12 shown in FIG. 1 or the semiconductor optical amplifier (not shown) can be varied efficiently.
  • the number of blades may be two, or four or more. Since the distribution of the strain stress generated in the part 72 differs depending on the number, the number of blades may be selected according to the characteristics of the semiconductor light guide light source 12 shown in FIG. 1 or a semiconductor optical amplifier (not shown).
  • the beam 31 shown in FIG. 1 has a structure including a plurality of blades extending in different directions with each part being substantially the center, but the part is located at an arbitrary position of the beam 31. can do.
  • the part is preferably a base part of the beam 31.
  • FIG. 15 shows a fifth modification of the beam 31.
  • the beam 305 shown in FIG. 15 includes blades 64-1 and 64-2.
  • the beam 305 is formed at one corner 76 of the four corners of the semiconductor layer (reference numeral 23 shown in FIG. 1) cut out in a square shape, and the semiconductor layer of the blade 75-1, the blade 64-2, and the portion 75 surrounded by the corner. (Reference numeral 23 shown in FIG. 1) remains without being etched.
  • the blade 64-1 and the blade 64-2 extend in different directions with the base portion 73 of the beam 305 substantially at the center.
  • strain when the beam 305 is bent can be concentrated on the root portion 73.
  • the insulator layer (reference numeral 22 shown in FIG. 1) disposed under the portion 75 may be removed or may remain.
  • the substantially central portions 65-1 and 65-2 in the width direction of the blades 64-1 and 64-2 are uniformly thinned.
  • the outer edge of the portion 75 is also thin, so that the substantially central portion 65-1 and the substantially central portion 65-2 are extended.
  • the beam 305 has a blade 64-1 and a blade 64-2 that extend beyond the base portion 73 of the beam 305 to the outer edge portion of the portion 75, and a notch is provided in a part 74 thereof.
  • the semiconductor light guide light source 12 shown in FIG. 1 or a semiconductor optical amplifier (not shown) is formed at the base portion 73. Thereby, even when the deflection amount of the beam 305 is small, the wavelength of the semiconductor light guide light source 12 shown in FIG. 1 or the semiconductor optical amplifier (not shown) can be varied efficiently.
  • the optical element according to the present embodiment makes it possible to vary the oscillation wavelength of the semiconductor light guide light source or the semiconductor optical amplifier by varying the strain amount.
  • FIG. 16 shows an example of the relationship between the semiconductor forbidden band and the optical communication band with respect to the strain amount.
  • FIG. 16 shows changes in the forbidden band when two-dimensional strain is introduced into GaAs, which is one of the semiconductors having optical gain.
  • the semiconductor light guide light source (reference numeral 12 shown in FIG. 1) has an arbitrary wavelength from the O band in the 1.3 ⁇ m band to the U band in the 1.6 ⁇ m band. Light can be emitted. For this reason, after assembling various optical elements using a semiconductor light guide light source or a semiconductor optical amplifier, an optical element having an arbitrary wavelength characteristic can be manufactured by varying the strain amount of the beam 31. . For example, even when an optical element having a wavelength of 1.56 ⁇ m at the time when a semiconductor light guide light source or a semiconductor optical amplifier is mounted on the chip, an amount of distortion of the semiconductor layer (reference numeral 23 shown in FIG. 1) is appropriately selected. Thus, an optical element having a wavelength of 1.55 ⁇ m can be manufactured.
  • the temperature dependence of the forbidden band and the refractive index can be compensated by the strain by varying the strain amount.
  • WDM Widelength Division Multiplexer
  • the operation wavelength of the element can be dynamically controlled by realizing an arbitrary wavelength with an appropriate amount of distortion.
  • various active optical elements having wavelength selectivity such as an optical filter and an optical modulator can be easily manufactured.
  • Embodiment 6 In Embodiment 1, although the example which uses Si or GaAs for the semiconductor layer 23 was shown, it is not limited to this.
  • Ge can be used as a suitable example. Since Ge makes a direct transition, it can oscillate at an oscillation wavelength as designed, and is suitable for application to light sources and optical amplifiers that require wavelength control accuracy. Further, by using Ge, it is possible to output a mid-infrared wavelength without lowering the melting point.
  • FIG. 17 shows an example of a cross-sectional structure of the strain applying portion when Ge is used for the semiconductor layer 23.
  • the strain imparting unit 11 of this embodiment includes a substrate 21 made of Si, an insulator layer 22 made of SiO 2 , and a semiconductor layer 23 in which Ge is sandwiched between Si. Si on both sides of Ge functions as a barrier layer.
  • the Si of the semiconductor layer 23 is stacked on the SOI. There may be no Si layer on SOI.
  • the semiconductor layer 23 preferably has a quantum well structure.
  • a quantum well structure is inserted into the Ge layer and / or the Si layer of the semiconductor layer 23 shown in FIG.
  • the quantum well structure may be a fine wire structure or a box structure.
  • the layer thickness of each layer forming the quantum well structure must be a thickness that causes a quantum effect.
  • FIG. 17 shows an example of the semiconductor layer 23 in which Ge is sandwiched between Si, the present invention is not limited to this.
  • a structure in which a quantum well structure composed of AlGaAs, GaAs, and AlGaAs is sequentially stacked on Ge and SOI is an example.
  • the Ge layer may be omitted.
  • An example of such a quantum well structure is GaAs, InGaAs, and GaAs.
  • the Ge layer may be omitted.
  • the beam 31 is formed by etching the semiconductor layer 23 and then the insulator layer 22 is etched.
  • the present invention is not limited to this.
  • the beam 31 may be formed after etching the insulator layer 22.
  • the manufacturing method in this case will be described.
  • FIG. 18 is an example of a top view of the strain imparting portion in the manufacturing method according to the present embodiment, where (a) shows the state after the semiconductor layer removal step, and (b) shows the state after the insulator layer removal step. (C) shows the state after the beam shape forming step.
  • FIG. 19 is an example of a cross-sectional view taken along the line BB ′ of the strain imparting portion in the manufacturing process according to the present embodiment.
  • FIG. 19A shows a state after the semiconductor layer removal process
  • FIG. 19B shows the insulator layer removal process. The latter state is shown
  • (c) shows the state after the beam shape forming step.
  • a laminating process for sequentially laminating the substrate 21, the insulator layer 22, and the semiconductor layer 23 is performed.
  • a semiconductor layer removal step is performed. In the semiconductor layer removing step, a part of the semiconductor layer 23 is removed. At this time, a part of the semiconductor layer 23 is removed so that the tip portion of the beam 31 remains. As a result, as shown in FIGS. 18A and 19A, the insulator layer 22 is exposed.
  • an insulator layer removing step is performed.
  • a portion of the insulator layer 22 exposed by the semiconductor layer removing step and its peripheral portion are removed by wet etching to form a recess.
  • etching is performed with hydrofluoric acid.
  • the insulator layer 22 is removed by a length wider than the range in which the semiconductor layer 23 is removed by the length of the beam 31 in the semiconductor layer removing process. Thereby, as shown in FIGS. 18 (b) and 19 (b), the edge 60 of the recess protrudes by the length of the beam 31.
  • a beam shape forming process is performed.
  • the insulator layer 22 is removed as shown in FIG.
  • the insulator layer 22 existing under the semiconductor layer 23 may be removed from the edge toward the outside.
  • the edge 60 of the recessed portion protruding by the step of removing the insulator layer 22 in the semiconductor layer 23 may be dry etched leaving the shape of the beam 31. It is valid.
  • the beam 31 is formed.
  • the shape of the beam 31 can be formed as designed. For this reason, the distortion
  • FIG. 6 shows a strain applying unit according to the embodiment.
  • the substrate 21 shown in FIG. 1 is made of Si
  • the insulator layer 22 shown in FIG. 1 is made of SiO 2
  • the semiconductor layer 23 shown in FIG. 1 is made of Si.
  • the insulator layer 22 has a thickness of 3 ⁇ m
  • the semiconductor layer 23 has a thickness of 250 nm.
  • the opening space on both sides of the fulcrum of the beam 31 was 10 ⁇ m. A comparison was made when the width a and the length b of the beam 31 of the strain applying portion are different.
  • the width a of the beam 31 is 3 ⁇ m, and the length b of the beam 31 is 5 ⁇ m. At this time, the maximum allowable load of the beam 31 is 1.2 ⁇ 10 ⁇ 5 (N). In the second example, the width a of the beam 31 is 3 ⁇ m, and the length b of the beam 31 is 7 ⁇ m. At this time, the maximum allowable load of the beam 31 is 6.0 ⁇ 10 ⁇ 6 (N). In the third example, the width a of the beam 31 is 5 ⁇ m, and the length b of the beam 31 is 7 ⁇ m. At this time, the maximum allowable load of the beam 31 is 9.0 ⁇ 10 ⁇ 6 (N).
  • Si the following parameters of Si and SiO 2 were used in calculating the maximum allowable load.
  • -E is 130 GPa
  • -v 0.28
  • C 11 is 166 GPa
  • C 12 is 64 GPa
  • C 44 is 79.6 GPa.
  • SiO 2 -E is 73 GPa
  • -v 0.17
  • C 11 is 87.5 GPa
  • C 44 is 31.2 GPa.
  • the tip of the beam 31 of the first example, the second example, and the third example was pushed in the direction approaching the substrate 21 shown in FIG. 1, and the strain generated at that time was measured. As a result, it was found that the strain at the fulcrum is larger than the open end of the beam 31. It was also found that the fulcrum of the beam 31 is distributed in the direction of the width a of the beam 31.
  • FIG. 7 shows a first measurement example of strain
  • (a) shows the maximum principal strain
  • (b) shows the strain in the width direction of the beam
  • (c) shows the strain in the length direction of the beam.
  • the horizontal axis indicates the distance from the center point in the width a direction of the beam 31 shown in FIG.
  • the strain when the maximum allowable load was applied to the tip of the beam was measured. That is, the power of 1.2 ⁇ 10 -5 (N) was added in the first example, the power of 6.0 ⁇ 10 -6 (N) was added in the second embodiment, in the third example 9.0 ⁇ 10 - 6 (N) force was applied.
  • FIG. 8 shows a second measurement example of strain, where (a) shows the maximum principal strain, (b) shows the strain in the width direction of the beam, and (c) shows the strain in the length direction of the beam.
  • the horizontal axis represents the distance from the center point in the width a direction of the beam 31 shown in FIG.
  • a force of 6.0 ⁇ 10 ⁇ 6 (N) was applied to the tip of the beam.
  • the strain amount is the smallest when the distance from the center is ⁇ 0.5 ⁇ m or more and 0.5 ⁇ m or less. It turned out that the amount of strain increased as it approached the edge of.
  • the third example has the smallest amount of strain, so that when the length b of the beam is increased, the amount of strain is reduced and the beam is easily bent.
  • the distribution of strain in the width direction of the beam 31 and the length direction of the beam 31 shown in FIG. 1 was measured.
  • the strain applying portion in which the width a of the beam 31 is 5 ⁇ m and the length b of the beam 31 is 6 ⁇ m in the above-described first embodiment is used.
  • tip of the beam 31 was pushed in the direction approaching the board
  • FIG. 9 is a simulation result of the strain imparting portion according to the present embodiment, where (a) shows the strain in the length direction on the upper surface of the beam, (b) shows the strain in the width direction on the upper surface of the beam, c) shows the strain in the length direction on the lower surface of the beam, and (d) shows the strain in the width direction on the lower surface of the beam. From the simulation results, it was found that when the strain in the elongation direction occurs on the upper surface, the shrinkage in the shrinkage direction corresponding to the strain on the upper surface occurs on the lower surface. As a result, it can be seen that when the tip of the beam 31 is pushed away from the substrate 21 shown in FIG.
  • FIG. 10A and 10B are measurement results of the strain amount distribution according to the present example, in which FIG. 10A shows the distribution of strain generated in the beam length direction in the beam length direction, and FIG. 10B shows the beam width. The distribution in the length direction of the beam generated in the direction is shown.
  • the horizontal axis of Fig.10 (a) and FIG.10 (b) shows the distance from the fulcrum of the beam 31 shown in FIG.
  • strain is generated in the extending direction in the length direction of the beam, and strain is generated in the contracting direction in the width direction of the beam.
  • the strain varies depending on the position of the beam.
  • the strain distribution in the length direction of the beam is almost linear.
  • decomposability of the variable distortion amount can be changed with the position in the length direction of a beam. Therefore, it is possible to vary the resolution when the oscillation wavelength of the semiconductor light guide light source is varied depending on which position in the length direction of the beam the semiconductor light guide light source is formed.
  • the amount of strain is not zero when the distance is 6 ⁇ m. That is, the strain amount is not zero even at the open end of the beam. For this reason, the semiconductor light guide light source can also be arranged at the open end of the beam.
  • the optical element of the present invention can be used in an optical transmission apparatus, the present invention can be applied to the information communication industry.
  • 11 Strain imparting unit 12: Semiconductor light guide light source 21: Substrate 22: Insulator layer 23: Semiconductor layers 31, 31a, 31b: Beam 41: Resist layer 51: Power source 52: Variable circuit 53: Temperature sensors 61-1, 61 -2, 61-3, 62-1, 62-2, 62-3: blade 71, 73: part of beam 72: part of blade 301, 302, 303: beam

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

L'invention concerne un élément optique dans lequel la longueur d'onde d'oscillation peut être ajustée très précisément. L'élément optique de cette invention comporte une partie d'application de contrainte (11) possédant dans l'ordre un substrat (21) formé d'un semi-conducteur ou d'un conducteur, une couche d'isolation (22) dont une partie à été retirée, et une couche de semi-conducteurs (23) en forme de barre (31) sur la surface supérieure de la partie de laquelle la couche d'isolation à été retirée, ainsi qu'une source lumineuse (12) de guide de lumière à semi-conducteurs formée sur la surface supérieure de la barre (31). Une contrainte est générée dans la barre (31) par application d'un champ électrique entre le substrat (21) et la barre (31) et une contrainte est générée dans la source lumineuse (12) de guide de lumière à semi-conducteurs. Étant donné que la longueur d'onde d'oscillation varie en réponse à la contrainte impartie à la source lumineuse (12) de guide de lumière à semi-conducteurs, en fonction de la quantité de contrainte appliquée par la partie d'application de contrainte (11), la longueur d'onde d'oscillation de la source lumineuse (12) de guide de lumière à semi-conducteurs est modifiée.
PCT/JP2010/064633 2009-08-28 2010-08-27 Élément optique Ceased WO2011024968A1 (fr)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014021270A (ja) * 2012-07-18 2014-02-03 Nippon Telegr & Teleph Corp <Ntt> 光素子
JP2014174261A (ja) * 2013-03-07 2014-09-22 Nippon Telegr & Teleph Corp <Ntt> 光素子
JP2015025937A (ja) * 2013-07-26 2015-02-05 日本電信電話株式会社 光変調器
JP2015219294A (ja) * 2014-05-15 2015-12-07 日本電信電話株式会社 光変調装置
US9469667B2 (en) 2011-04-04 2016-10-18 Merck Patent Gmbh Metal complexes
US9513106B2 (en) 2013-11-23 2016-12-06 Canon Kabushiki Kaisha Wavelength tunable light source

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JPH10173276A (ja) * 1996-12-05 1998-06-26 Mitsubishi Electric Corp 半導体レーザ装置
JP2001111131A (ja) * 1999-10-08 2001-04-20 Sony Corp 磁気機能素子および磁気機能装置
JP2007285879A (ja) * 2006-04-17 2007-11-01 Seiko Epson Corp 角速度センサおよびその製造方法
JP2009021227A (ja) * 2007-06-14 2009-01-29 Panasonic Corp 電気機械スイッチ、それを用いたフィルタ、および通信機器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10173276A (ja) * 1996-12-05 1998-06-26 Mitsubishi Electric Corp 半導体レーザ装置
JP2001111131A (ja) * 1999-10-08 2001-04-20 Sony Corp 磁気機能素子および磁気機能装置
JP2007285879A (ja) * 2006-04-17 2007-11-01 Seiko Epson Corp 角速度センサおよびその製造方法
JP2009021227A (ja) * 2007-06-14 2009-01-29 Panasonic Corp 電気機械スイッチ、それを用いたフィルタ、および通信機器

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9469667B2 (en) 2011-04-04 2016-10-18 Merck Patent Gmbh Metal complexes
JP2014021270A (ja) * 2012-07-18 2014-02-03 Nippon Telegr & Teleph Corp <Ntt> 光素子
JP2014174261A (ja) * 2013-03-07 2014-09-22 Nippon Telegr & Teleph Corp <Ntt> 光素子
JP2015025937A (ja) * 2013-07-26 2015-02-05 日本電信電話株式会社 光変調器
US9513106B2 (en) 2013-11-23 2016-12-06 Canon Kabushiki Kaisha Wavelength tunable light source
JP2015219294A (ja) * 2014-05-15 2015-12-07 日本電信電話株式会社 光変調装置

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