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WO2011021860A3 - Procédé de fabrication de substrat matriciel pour afficheur à cristaux liquides - Google Patents

Procédé de fabrication de substrat matriciel pour afficheur à cristaux liquides Download PDF

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Publication number
WO2011021860A3
WO2011021860A3 PCT/KR2010/005484 KR2010005484W WO2011021860A3 WO 2011021860 A3 WO2011021860 A3 WO 2011021860A3 KR 2010005484 W KR2010005484 W KR 2010005484W WO 2011021860 A3 WO2011021860 A3 WO 2011021860A3
Authority
WO
WIPO (PCT)
Prior art keywords
copper
metal layer
based metal
liquid crystal
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/005484
Other languages
English (en)
Other versions
WO2011021860A2 (fr
WO2011021860A9 (fr
Inventor
Hyun-Kyu Lee
Woo-Ram Lee
Kyung-Sub Jung
Yong-Suk Choi
Suk Lee
Young-Jin Yoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongwoo Fine Chem Co Ltd
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090077211A external-priority patent/KR101586865B1/ko
Priority claimed from KR1020090077546A external-priority patent/KR101586500B1/ko
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Priority to CN201080037314.9A priority Critical patent/CN102576170B/zh
Publication of WO2011021860A2 publication Critical patent/WO2011021860A2/fr
Publication of WO2011021860A3 publication Critical patent/WO2011021860A3/fr
Publication of WO2011021860A9 publication Critical patent/WO2011021860A9/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention porte sur un procédé de fabrication d'un substrat matriciel pour un afficheur à cristaux liquides, comprenant la formation d'une couche métallique à base de cuivre sur un substrat et la gravure de la couche métallique à base de cuivre à l'aide d'une composition d'agent de gravure, ce qui forme ainsi un câblage de grille, et la formation d'une couche métallique à base de cuivre sur une couche de semi-conducteur et la gravure de la couche métallique à base de cuivre à l'aide de la composition d'agent de gravure, ce qui forme ainsi des électrodes source/drain, la composition d'agent de gravure comprenant, sur la base du poids total de la composition, A) 5,0~25% en poids de peroxyde d'hydrogène (H2O2), B) 0,01~1,0% en poids d'un composé contenant du fluor, C) 0,1~5,0% en poids d'un composé azole, D) 0,1~10,0% en poids d'un ou plusieurs composés choisis parmi les dérivés de l'acide phosphonique et les sels de ceux-ci et E) le reste d'eau.
PCT/KR2010/005484 2009-08-20 2010-08-19 Procédé de fabrication de substrat matriciel pour afficheur à cristaux liquides Ceased WO2011021860A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080037314.9A CN102576170B (zh) 2009-08-20 2010-08-19 制造用于液晶显示器的阵列基板的方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090077211A KR101586865B1 (ko) 2009-08-20 2009-08-20 액정표시장치용 어레이 기판의 제조방법
KR10-2009-0077211 2009-08-20
KR10-2009-0077546 2009-08-21
KR1020090077546A KR101586500B1 (ko) 2009-08-21 2009-08-21 액정표시장치용 어레이 기판의 제조방법

Publications (3)

Publication Number Publication Date
WO2011021860A2 WO2011021860A2 (fr) 2011-02-24
WO2011021860A3 true WO2011021860A3 (fr) 2011-06-16
WO2011021860A9 WO2011021860A9 (fr) 2011-08-11

Family

ID=43607482

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005484 Ceased WO2011021860A2 (fr) 2009-08-20 2010-08-19 Procédé de fabrication de substrat matriciel pour afficheur à cristaux liquides

Country Status (3)

Country Link
CN (1) CN102576170B (fr)
TW (1) TWI524428B (fr)
WO (1) WO2011021860A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140060679A (ko) * 2012-11-12 2014-05-21 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
KR20140084417A (ko) * 2012-12-26 2014-07-07 동우 화인켐 주식회사 박막 트랜지스터의 채널 형성용 식각액 조성물 및 채널 형성 방법
CN110147008B (zh) * 2013-07-03 2022-03-22 东友精细化工有限公司 制造液晶显示器用阵列基板的方法
TWI640655B (zh) * 2013-12-23 2018-11-11 韓商東友精細化工有限公司 製備薄膜電晶體陣列之方法及用於鉬基金屬膜/金屬氧化物膜之蝕刻劑組成物
JP6657770B2 (ja) 2014-11-27 2020-03-04 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法
JP6531612B2 (ja) 2014-11-27 2019-06-19 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法
KR102293675B1 (ko) * 2015-03-24 2021-08-25 동우 화인켐 주식회사 구리계 금속막 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
JP6337922B2 (ja) * 2015-08-03 2018-06-06 三菱瓦斯化学株式会社 銅層およびチタン層を含む多層薄膜をエッチングするためのエッチング液およびこれを用いたエッチング方法、並びに該エッチング方法を用いて得られた基板
CN106835138B (zh) * 2015-12-03 2019-02-19 东友精细化工有限公司 蚀刻液组合物、显示装置用阵列基板及其制造方法
WO2019186624A1 (fr) 2018-03-26 2019-10-03 三菱瓦斯化学株式会社 Agent d'attaque chimique
TWI759450B (zh) * 2018-03-27 2022-04-01 日商三菱瓦斯化學股份有限公司 蝕刻液、蝕刻方法、及顯示裝置之製造方法
CN114164003A (zh) * 2021-12-06 2022-03-11 Tcl华星光电技术有限公司 用于显示面板的蚀刻剂组合物及显示面板的蚀刻方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980026265A (ko) * 1996-10-08 1998-07-15 김광호 반도체 웨이퍼 재생을 위한 식각액 조성물
KR20050000682A (ko) * 2003-06-24 2005-01-06 엘지.필립스 엘시디 주식회사 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액
KR20050067934A (ko) * 2003-12-29 2005-07-05 엘지.필립스 엘시디 주식회사 금속 배선의 형성방법 및 이를 이용한 액정표시장치의제조방법
KR20070001530A (ko) * 2005-06-29 2007-01-04 엘지.필립스 엘시디 주식회사 식각용액과 이를 이용한 전극 및 배선형성방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101199533B1 (ko) * 2005-06-22 2012-11-09 삼성디스플레이 주식회사 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법
KR101391074B1 (ko) * 2007-08-07 2014-05-02 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조 방법
CN101903988B (zh) * 2007-12-21 2013-07-31 和光纯药工业株式会社 蚀刻剂、蚀刻方法及蚀刻剂制备液

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980026265A (ko) * 1996-10-08 1998-07-15 김광호 반도체 웨이퍼 재생을 위한 식각액 조성물
KR20050000682A (ko) * 2003-06-24 2005-01-06 엘지.필립스 엘시디 주식회사 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액
KR20050067934A (ko) * 2003-12-29 2005-07-05 엘지.필립스 엘시디 주식회사 금속 배선의 형성방법 및 이를 이용한 액정표시장치의제조방법
KR20070001530A (ko) * 2005-06-29 2007-01-04 엘지.필립스 엘시디 주식회사 식각용액과 이를 이용한 전극 및 배선형성방법

Also Published As

Publication number Publication date
WO2011021860A2 (fr) 2011-02-24
WO2011021860A9 (fr) 2011-08-11
CN102576170A (zh) 2012-07-11
CN102576170B (zh) 2014-12-17
TW201207952A (en) 2012-02-16
TWI524428B (zh) 2016-03-01

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