WO2011021860A3 - Procédé de fabrication de substrat matriciel pour afficheur à cristaux liquides - Google Patents
Procédé de fabrication de substrat matriciel pour afficheur à cristaux liquides Download PDFInfo
- Publication number
- WO2011021860A3 WO2011021860A3 PCT/KR2010/005484 KR2010005484W WO2011021860A3 WO 2011021860 A3 WO2011021860 A3 WO 2011021860A3 KR 2010005484 W KR2010005484 W KR 2010005484W WO 2011021860 A3 WO2011021860 A3 WO 2011021860A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- metal layer
- based metal
- liquid crystal
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Abstract
L'invention porte sur un procédé de fabrication d'un substrat matriciel pour un afficheur à cristaux liquides, comprenant la formation d'une couche métallique à base de cuivre sur un substrat et la gravure de la couche métallique à base de cuivre à l'aide d'une composition d'agent de gravure, ce qui forme ainsi un câblage de grille, et la formation d'une couche métallique à base de cuivre sur une couche de semi-conducteur et la gravure de la couche métallique à base de cuivre à l'aide de la composition d'agent de gravure, ce qui forme ainsi des électrodes source/drain, la composition d'agent de gravure comprenant, sur la base du poids total de la composition, A) 5,0~25% en poids de peroxyde d'hydrogène (H2O2), B) 0,01~1,0% en poids d'un composé contenant du fluor, C) 0,1~5,0% en poids d'un composé azole, D) 0,1~10,0% en poids d'un ou plusieurs composés choisis parmi les dérivés de l'acide phosphonique et les sels de ceux-ci et E) le reste d'eau.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201080037314.9A CN102576170B (zh) | 2009-08-20 | 2010-08-19 | 制造用于液晶显示器的阵列基板的方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090077211A KR101586865B1 (ko) | 2009-08-20 | 2009-08-20 | 액정표시장치용 어레이 기판의 제조방법 |
| KR10-2009-0077211 | 2009-08-20 | ||
| KR10-2009-0077546 | 2009-08-21 | ||
| KR1020090077546A KR101586500B1 (ko) | 2009-08-21 | 2009-08-21 | 액정표시장치용 어레이 기판의 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| WO2011021860A2 WO2011021860A2 (fr) | 2011-02-24 |
| WO2011021860A3 true WO2011021860A3 (fr) | 2011-06-16 |
| WO2011021860A9 WO2011021860A9 (fr) | 2011-08-11 |
Family
ID=43607482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2010/005484 Ceased WO2011021860A2 (fr) | 2009-08-20 | 2010-08-19 | Procédé de fabrication de substrat matriciel pour afficheur à cristaux liquides |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN102576170B (fr) |
| TW (1) | TWI524428B (fr) |
| WO (1) | WO2011021860A2 (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140060679A (ko) * | 2012-11-12 | 2014-05-21 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
| KR20140084417A (ko) * | 2012-12-26 | 2014-07-07 | 동우 화인켐 주식회사 | 박막 트랜지스터의 채널 형성용 식각액 조성물 및 채널 형성 방법 |
| CN110147008B (zh) * | 2013-07-03 | 2022-03-22 | 东友精细化工有限公司 | 制造液晶显示器用阵列基板的方法 |
| TWI640655B (zh) * | 2013-12-23 | 2018-11-11 | 韓商東友精細化工有限公司 | 製備薄膜電晶體陣列之方法及用於鉬基金屬膜/金屬氧化物膜之蝕刻劑組成物 |
| JP6657770B2 (ja) | 2014-11-27 | 2020-03-04 | 三菱瓦斯化学株式会社 | 液体組成物およびこれを用いたエッチング方法 |
| JP6531612B2 (ja) | 2014-11-27 | 2019-06-19 | 三菱瓦斯化学株式会社 | 液体組成物およびこれを用いたエッチング方法 |
| KR102293675B1 (ko) * | 2015-03-24 | 2021-08-25 | 동우 화인켐 주식회사 | 구리계 금속막 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
| JP6337922B2 (ja) * | 2015-08-03 | 2018-06-06 | 三菱瓦斯化学株式会社 | 銅層およびチタン層を含む多層薄膜をエッチングするためのエッチング液およびこれを用いたエッチング方法、並びに該エッチング方法を用いて得られた基板 |
| CN106835138B (zh) * | 2015-12-03 | 2019-02-19 | 东友精细化工有限公司 | 蚀刻液组合物、显示装置用阵列基板及其制造方法 |
| WO2019186624A1 (fr) | 2018-03-26 | 2019-10-03 | 三菱瓦斯化学株式会社 | Agent d'attaque chimique |
| TWI759450B (zh) * | 2018-03-27 | 2022-04-01 | 日商三菱瓦斯化學股份有限公司 | 蝕刻液、蝕刻方法、及顯示裝置之製造方法 |
| CN114164003A (zh) * | 2021-12-06 | 2022-03-11 | Tcl华星光电技术有限公司 | 用于显示面板的蚀刻剂组合物及显示面板的蚀刻方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980026265A (ko) * | 1996-10-08 | 1998-07-15 | 김광호 | 반도체 웨이퍼 재생을 위한 식각액 조성물 |
| KR20050000682A (ko) * | 2003-06-24 | 2005-01-06 | 엘지.필립스 엘시디 주식회사 | 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액 |
| KR20050067934A (ko) * | 2003-12-29 | 2005-07-05 | 엘지.필립스 엘시디 주식회사 | 금속 배선의 형성방법 및 이를 이용한 액정표시장치의제조방법 |
| KR20070001530A (ko) * | 2005-06-29 | 2007-01-04 | 엘지.필립스 엘시디 주식회사 | 식각용액과 이를 이용한 전극 및 배선형성방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101199533B1 (ko) * | 2005-06-22 | 2012-11-09 | 삼성디스플레이 주식회사 | 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 |
| KR101391074B1 (ko) * | 2007-08-07 | 2014-05-02 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조 방법 |
| CN101903988B (zh) * | 2007-12-21 | 2013-07-31 | 和光纯药工业株式会社 | 蚀刻剂、蚀刻方法及蚀刻剂制备液 |
-
2010
- 2010-08-19 CN CN201080037314.9A patent/CN102576170B/zh active Active
- 2010-08-19 WO PCT/KR2010/005484 patent/WO2011021860A2/fr not_active Ceased
- 2010-08-20 TW TW099127987A patent/TWI524428B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980026265A (ko) * | 1996-10-08 | 1998-07-15 | 김광호 | 반도체 웨이퍼 재생을 위한 식각액 조성물 |
| KR20050000682A (ko) * | 2003-06-24 | 2005-01-06 | 엘지.필립스 엘시디 주식회사 | 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액 |
| KR20050067934A (ko) * | 2003-12-29 | 2005-07-05 | 엘지.필립스 엘시디 주식회사 | 금속 배선의 형성방법 및 이를 이용한 액정표시장치의제조방법 |
| KR20070001530A (ko) * | 2005-06-29 | 2007-01-04 | 엘지.필립스 엘시디 주식회사 | 식각용액과 이를 이용한 전극 및 배선형성방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011021860A2 (fr) | 2011-02-24 |
| WO2011021860A9 (fr) | 2011-08-11 |
| CN102576170A (zh) | 2012-07-11 |
| CN102576170B (zh) | 2014-12-17 |
| TW201207952A (en) | 2012-02-16 |
| TWI524428B (zh) | 2016-03-01 |
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