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WO2011021860A3 - Method of fabricating array substrate for liquid crystal display - Google Patents

Method of fabricating array substrate for liquid crystal display Download PDF

Info

Publication number
WO2011021860A3
WO2011021860A3 PCT/KR2010/005484 KR2010005484W WO2011021860A3 WO 2011021860 A3 WO2011021860 A3 WO 2011021860A3 KR 2010005484 W KR2010005484 W KR 2010005484W WO 2011021860 A3 WO2011021860 A3 WO 2011021860A3
Authority
WO
WIPO (PCT)
Prior art keywords
copper
metal layer
based metal
liquid crystal
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/005484
Other languages
French (fr)
Other versions
WO2011021860A2 (en
WO2011021860A9 (en
Inventor
Hyun-Kyu Lee
Woo-Ram Lee
Kyung-Sub Jung
Yong-Suk Choi
Suk Lee
Young-Jin Yoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongwoo Fine Chem Co Ltd
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090077211A external-priority patent/KR101586865B1/en
Priority claimed from KR1020090077546A external-priority patent/KR101586500B1/en
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Priority to CN201080037314.9A priority Critical patent/CN102576170B/en
Publication of WO2011021860A2 publication Critical patent/WO2011021860A2/en
Publication of WO2011021860A3 publication Critical patent/WO2011021860A3/en
Publication of WO2011021860A9 publication Critical patent/WO2011021860A9/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)

Abstract

Disclosed is a method of fabricating an array substrate for a liquid crystal display, including forming a copper-based metal layer on a substrate and etching the copper-based metal layer using an etchant composition thus forming gate wiring, and forming a copper-based metal layer on a semiconductor layer and etching the copper-based metal layer using the etchant composition thus forming source/drain electrodes, the etchant composition including based on the total weight of the composition, A) 5.0 ~ 25 wt% of hydrogen peroxide (H2O2), B) 0.01 ~ 1.0 wt% of a fluorine-containing compound, C) 0.1 ~ 5.0 wt% of an azole compound, D) 0.1 ~ 10.0 wt% of one or more compounds selected from among phosphonic acid derivatives and salts thereof, and E) a remainder of water.
PCT/KR2010/005484 2009-08-20 2010-08-19 Method of fabricating array substrate for liquid crystal display Ceased WO2011021860A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080037314.9A CN102576170B (en) 2009-08-20 2010-08-19 Method of fabricating array substrate for liquid crystal display

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090077211A KR101586865B1 (en) 2009-08-20 2009-08-20 Manufacturing method of an array substrate for liquid crystal display
KR10-2009-0077211 2009-08-20
KR10-2009-0077546 2009-08-21
KR1020090077546A KR101586500B1 (en) 2009-08-21 2009-08-21 Manufacturing method of an array substrate for liquid crystal display

Publications (3)

Publication Number Publication Date
WO2011021860A2 WO2011021860A2 (en) 2011-02-24
WO2011021860A3 true WO2011021860A3 (en) 2011-06-16
WO2011021860A9 WO2011021860A9 (en) 2011-08-11

Family

ID=43607482

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005484 Ceased WO2011021860A2 (en) 2009-08-20 2010-08-19 Method of fabricating array substrate for liquid crystal display

Country Status (3)

Country Link
CN (1) CN102576170B (en)
TW (1) TWI524428B (en)
WO (1) WO2011021860A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140060679A (en) * 2012-11-12 2014-05-21 동우 화인켐 주식회사 Manufacturing method of an array substrate for liquid crystal display
KR20140084417A (en) * 2012-12-26 2014-07-07 동우 화인켐 주식회사 Echaing composition for preparing a channel of thin film transistor and method of preparing a channel of thin film transistor
CN110147008B (en) * 2013-07-03 2022-03-22 东友精细化工有限公司 Method for manufacturing array substrate for liquid crystal display
TWI640655B (en) * 2013-12-23 2018-11-11 韓商東友精細化工有限公司 Method of preparing array of thin film transistor and etchant composition for molybdenum-based metal film/metal oxide film
JP6657770B2 (en) 2014-11-27 2020-03-04 三菱瓦斯化学株式会社 Liquid composition and etching method using the same
JP6531612B2 (en) 2014-11-27 2019-06-19 三菱瓦斯化学株式会社 Liquid composition and etching method using the same
KR102293675B1 (en) * 2015-03-24 2021-08-25 동우 화인켐 주식회사 Etching solution composition for copper-based metal layer and method for etching copper-based metal layer using the same
JP6337922B2 (en) * 2015-08-03 2018-06-06 三菱瓦斯化学株式会社 Etching solution for etching multilayer thin film including copper layer and titanium layer, etching method using the same, and substrate obtained by using the etching method
CN106835138B (en) * 2015-12-03 2019-02-19 东友精细化工有限公司 Etching liquid composition, array substrate for display device, and manufacturing method thereof
WO2019186624A1 (en) 2018-03-26 2019-10-03 三菱瓦斯化学株式会社 Etchant
TWI759450B (en) * 2018-03-27 2022-04-01 日商三菱瓦斯化學股份有限公司 Etching solution, etching method, and manufacturing method of display device
CN114164003A (en) * 2021-12-06 2022-03-11 Tcl华星光电技术有限公司 Etchant composition for display panel and etching method of display panel

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980026265A (en) * 1996-10-08 1998-07-15 김광호 Etch Liquid Composition for Semiconductor Wafer Regeneration
KR20050000682A (en) * 2003-06-24 2005-01-06 엘지.필립스 엘시디 주식회사 An etchant to etching a double layer with Cu(or Cu-alloy)
KR20050067934A (en) * 2003-12-29 2005-07-05 엘지.필립스 엘시디 주식회사 Method for forming metal line and method for manufacturing liquid crystal display device using the same
KR20070001530A (en) * 2005-06-29 2007-01-04 엘지.필립스 엘시디 주식회사 Etch solution and electrode and wiring formation method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101199533B1 (en) * 2005-06-22 2012-11-09 삼성디스플레이 주식회사 Echant and method for fabricating interconnection line and method for fabricating thin film transistor substrate using the same
KR101391074B1 (en) * 2007-08-07 2014-05-02 동우 화인켐 주식회사 Manufacturing method of array substrate for liquid crystal display
CN101903988B (en) * 2007-12-21 2013-07-31 和光纯药工业株式会社 Etchant, etching method and etchant preparation solution

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980026265A (en) * 1996-10-08 1998-07-15 김광호 Etch Liquid Composition for Semiconductor Wafer Regeneration
KR20050000682A (en) * 2003-06-24 2005-01-06 엘지.필립스 엘시디 주식회사 An etchant to etching a double layer with Cu(or Cu-alloy)
KR20050067934A (en) * 2003-12-29 2005-07-05 엘지.필립스 엘시디 주식회사 Method for forming metal line and method for manufacturing liquid crystal display device using the same
KR20070001530A (en) * 2005-06-29 2007-01-04 엘지.필립스 엘시디 주식회사 Etch solution and electrode and wiring formation method

Also Published As

Publication number Publication date
WO2011021860A2 (en) 2011-02-24
WO2011021860A9 (en) 2011-08-11
CN102576170A (en) 2012-07-11
CN102576170B (en) 2014-12-17
TW201207952A (en) 2012-02-16
TWI524428B (en) 2016-03-01

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