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WO2011014328A3 - Light-up prevention in electrostatic chucks - Google Patents

Light-up prevention in electrostatic chucks Download PDF

Info

Publication number
WO2011014328A3
WO2011014328A3 PCT/US2010/040284 US2010040284W WO2011014328A3 WO 2011014328 A3 WO2011014328 A3 WO 2011014328A3 US 2010040284 W US2010040284 W US 2010040284W WO 2011014328 A3 WO2011014328 A3 WO 2011014328A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
subterranean
base plate
electrically conductive
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/040284
Other languages
French (fr)
Other versions
WO2011014328A2 (en
Inventor
Tom Stevenson
Daniel Byun
Saurabh Ullal
Babak Kadkhodayan
Rajinder Dhindsa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to EP10804865A priority Critical patent/EP2460179A2/en
Priority to JP2012522844A priority patent/JP2013500605A/en
Priority to CN2010800327935A priority patent/CN102473672A/en
Priority to SG2012001616A priority patent/SG177584A1/en
Publication of WO2011014328A2 publication Critical patent/WO2011014328A2/en
Publication of WO2011014328A3 publication Critical patent/WO2011014328A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H10P72/7616—
    • H10P72/70—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H10P72/0434—
    • H10P72/72—
    • H10P72/722—
    • H10P72/7614—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.
PCT/US2010/040284 2009-07-30 2010-06-29 Light-up prevention in electrostatic chucks Ceased WO2011014328A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP10804865A EP2460179A2 (en) 2009-07-30 2010-06-29 Light-up prevention in electrostatic chucks
JP2012522844A JP2013500605A (en) 2009-07-30 2010-06-29 Ignition prevention in electrostatic chuck
CN2010800327935A CN102473672A (en) 2009-07-30 2010-06-29 Ignition Prevention in Electrostatic Chucks
SG2012001616A SG177584A1 (en) 2009-07-30 2010-06-29 Light-up prevention in electrostatic chucks

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/512,520 US20110024049A1 (en) 2009-07-30 2009-07-30 Light-up prevention in electrostatic chucks
US12/512,520 2009-07-30

Publications (2)

Publication Number Publication Date
WO2011014328A2 WO2011014328A2 (en) 2011-02-03
WO2011014328A3 true WO2011014328A3 (en) 2011-05-05

Family

ID=43525875

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/040284 Ceased WO2011014328A2 (en) 2009-07-30 2010-06-29 Light-up prevention in electrostatic chucks

Country Status (8)

Country Link
US (1) US20110024049A1 (en)
EP (1) EP2460179A2 (en)
JP (1) JP2013500605A (en)
KR (1) KR20120048578A (en)
CN (1) CN102473672A (en)
SG (2) SG10201404264RA (en)
TW (1) TW201118979A (en)
WO (1) WO2011014328A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8336891B2 (en) * 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US8937800B2 (en) * 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
JP6139249B2 (en) * 2013-04-26 2017-05-31 京セラ株式会社 Sample holder
US9666466B2 (en) * 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
JP5811513B2 (en) 2014-03-27 2015-11-11 Toto株式会社 Electrostatic chuck
SG11201610612SA (en) * 2014-06-20 2017-02-27 Youtec Co Ltd Plasma cvd device and method for producing magnetic recording medium
US10770270B2 (en) 2016-06-07 2020-09-08 Applied Materials, Inc. High power electrostatic chuck with aperture-reducing plug in a gas hole
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US10741425B2 (en) * 2017-02-22 2020-08-11 Lam Research Corporation Helium plug design to reduce arcing
US10916416B2 (en) 2017-11-14 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with modified surface and fabrication method thereof
JP7645838B2 (en) * 2022-03-31 2025-03-14 日本碍子株式会社 Wafer placement table

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940020497A (en) * 1993-02-16 1994-09-16 이노우에 아키라 PLASMA PROCESSING APPARATUS
KR19980022560A (en) * 1996-09-23 1998-07-06 김광호 Semiconductor Wafer Heat Treatment Equipment
KR20020031290A (en) * 2000-10-23 2002-05-01 시바타 마사하루 Susceptors for semiconductor-producing apparatuses
KR20030010824A (en) * 2001-07-27 2003-02-06 삼성전자주식회사 Bake equipment having a temperature compensation system
KR20070072233A (en) * 2005-12-31 2007-07-04 주식회사 아이피에스 Susceptor for Thin Film Deposition Chamber
KR20090035309A (en) * 2007-10-05 2009-04-09 주식회사 실트론 Method and apparatus for manufacturing epitaxial single crystal substrate

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059104B2 (en) * 1982-02-03 1985-12-23 株式会社東芝 electrostatic chuck board
KR100404631B1 (en) * 1994-01-31 2004-02-05 어플라이드 머티어리얼스, 인코포레이티드 Electrostatic chuck with insulator film of uniform thickness
US5729423A (en) * 1994-01-31 1998-03-17 Applied Materials, Inc. Puncture resistant electrostatic chuck
US6141203A (en) * 1994-03-03 2000-10-31 Sherman; Arthur Electrostatic chuck
EP0702494B1 (en) * 1994-09-19 2001-12-05 Matsushita Electric Industrial Co., Ltd. Three-dimensional image display apparatus
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5644467A (en) * 1995-09-28 1997-07-01 Applied Materials, Inc. Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
JP2000003953A (en) * 1998-06-15 2000-01-07 Foi:Kk Electrostatic chuck
KR20010046528A (en) * 1999-11-12 2001-06-15 윤종용 Structure for cooling of electro static chuck
US6606234B1 (en) * 2000-09-05 2003-08-12 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow
US6422775B1 (en) * 2001-03-23 2002-07-23 Intel Corporation Digital messaging pen
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
US20060175772A1 (en) * 2003-03-19 2006-08-10 Tokyo Electron Limited Substrate holding mechanism using electrostaic chuck and method of manufacturing the same
KR100505035B1 (en) * 2003-11-17 2005-07-29 삼성전자주식회사 Electrostatic chuck for supporting a substrate
JP4413667B2 (en) * 2004-03-19 2010-02-10 日本特殊陶業株式会社 Electrostatic chuck
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940020497A (en) * 1993-02-16 1994-09-16 이노우에 아키라 PLASMA PROCESSING APPARATUS
KR19980022560A (en) * 1996-09-23 1998-07-06 김광호 Semiconductor Wafer Heat Treatment Equipment
KR20020031290A (en) * 2000-10-23 2002-05-01 시바타 마사하루 Susceptors for semiconductor-producing apparatuses
KR20030010824A (en) * 2001-07-27 2003-02-06 삼성전자주식회사 Bake equipment having a temperature compensation system
KR20070072233A (en) * 2005-12-31 2007-07-04 주식회사 아이피에스 Susceptor for Thin Film Deposition Chamber
KR20090035309A (en) * 2007-10-05 2009-04-09 주식회사 실트론 Method and apparatus for manufacturing epitaxial single crystal substrate

Also Published As

Publication number Publication date
SG10201404264RA (en) 2014-10-30
JP2013500605A (en) 2013-01-07
US20110024049A1 (en) 2011-02-03
CN102473672A (en) 2012-05-23
WO2011014328A2 (en) 2011-02-03
SG177584A1 (en) 2012-02-28
TW201118979A (en) 2011-06-01
EP2460179A4 (en) 2012-06-06
EP2460179A2 (en) 2012-06-06
KR20120048578A (en) 2012-05-15

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