201118979 六、發明說明： 【發明所屬之技術領域】 本發明係關於靜電夾盤，尤有關於一靜電夾盤設計，其包八 有助於避免夾盤組件和處理中晶圓間的電弧作用或在後裔' ^叉 配通道之電漿點燃之特徵。 乳體刀 【先前技術】 (無） 【發明内容】 靜電夾盤在半導體製程中可被用於固定、箝位或依其他方法 搬運矽晶圓。許多靜電夾盤亦被設成幫助調節處理中晶圓的溫 度。舉例來說，如被充分紀錄於此技術中，一高導埶 二 如氦氣)可循環於-靜電夾盤中以幫助調節晶圓的溫 言，一在相當低壓之相當薄的氣體層可用於在電漿蝕刻製造或其 他半導體處理步驟中矽晶圓之散熱。此相當低壓的氣體广^通;^ ίΐίϊϊ磅的力量於晶圓，允許靜電吸引的使用以與之;目抗衡 和岔封晶圓於夾盤的表面。 本發明者所能了解，本揭露書的概料應驗多種易 於务生電水電弧作用和後側氣體離子化之靜電夾盤構造，盆包 =，那些闡明於美國專利第5,583,736、5,715，132、 f,，太揭二，，331、M22,775、6,606,234、與其他者。為清楚 以說明，但本揭露⑽範輪被限於而加 露㈣實施例，提供_靜電^ i t綱^匕ΐί層、—導電性基材、和—隱蔽的電弧減緩 ===配通道包=導電 =電====¾低導電係數的表面。隱 田低¥电係數層，且形成在靜電夹盤組 201118979 ΐ的隱蔽的部分中之混合氣體分配通道的相當高導電性表面之 依,、?'本揭路書的另一實施例，提一曰 含一靜電夾盤組件，其具有一或多個揭露===室，包 【實施方式】 首先參考圖1，-靜電夹盤組件1〇緣示於 Γη處:室，的系絡中’該半導體晶圓處理室1〇〇 體ί 、-電壓源70、和-冷煤氣體的供應器8 3处理室 =安置於處理室關定―加工用晶圓15，又盤=Η0 20、-圖案化接合層30、一導電性基材4〇、二：2接觸層 層5〇。半導體晶圓處理t 1〇〇的說明於此為^ =的=弧減緩 =本揭露書的概念將_於多種類的半導體圓理丄因為考慮 被揭限在類似於圖Μ中大略說明之處理室。Q處理至’且不應 陶兗接觸層20和導電性基材4〇協同界定 =10的隱蔽的部分之多數混合氣體分配通道3 組 亦包含形成於接觸層20的接觸面25中之多數:觸層2〇 ΐ明和界定本發明之目的，吾人可注意2 /為了 部分位於陶竟接觸層2〇的接觸面25之下广在 2隱 Jr電性基材40的遠部42之間。為了說明之 琴面25和 15將從接觸面25被稍微移開，但晶圓^ ^不之晶圓 接觸面25。 ，、有放地被靜電固定於 圖案化接合層30被設成將陶竞接觸層2〇201118979 VI. Description of the Invention: [Technical Field] The present invention relates to an electrostatic chuck, and more particularly to an electrostatic chuck design, which helps to avoid arcing between the chuck assembly and the wafer during processing or The characteristics of the plasma ignition in the descendants of the '^ fork-matching channel. Latex Knife [Prior Art] (None) [Invention] The electrostatic chuck can be used to fix, clamp or otherwise transport a silicon wafer in a semiconductor process. Many electrostatic chucks are also designed to help regulate the temperature of the wafer being processed. For example, if it is well documented in this technology, a high-conductivity such as helium can be circulated in an electrostatic chuck to help regulate the wafer's temperature, a fairly thin gas layer available at fairly low pressures. Heat dissipation of the wafer during plasma etching or other semiconductor processing steps. This relatively low-pressure gas is widely used; the force of the pound is applied to the wafer, allowing the use of electrostatic attraction to match the surface of the chuck. As can be appreciated by the inventors, the disclosure of the present disclosure fulfills a variety of electrostatic chuck configurations that are susceptible to electro-hydraulic arcing and backside gas ionization, and are described in U.S. Patent Nos. 5,583,736, 5,715,132, f,, too, two, 331, M22, 775, 6, 606, 234, and others. For clarity, the disclosure (10) of the wheel is limited to the dew (four) embodiment, providing _ electrostatic ^ it ^ ^ ^ ί layer, - conductive substrate, and - concealed arc slowdown = = = distribution channel package = Conductive = Electrical ====3⁄4 Surface with low conductivity. The hidden field is a low-power coefficient layer, and forms a relatively high-conductivity surface of the mixed gas distribution channel in the concealed portion of the electrostatic chuck group 201118979 ,, another embodiment of the present disclosure, An electrostatic chuck assembly having one or more exposed === chambers, and a package [embodiment] Referring first to FIG. 1, the electrostatic chuck assembly 1 is shown at the center of the chamber: 'The semiconductor wafer processing chamber 1 body ί, - voltage source 70, and - cold gas body supply 8.3 processing chamber = placed in the processing chamber determined - processing wafer 15, and disk = Η 0 20, - Patterned bonding layer 30, a conductive substrate 4", and 2: 2 contact layer 5". The description of the semiconductor wafer processing t 1 于此 is ^ = = arc slowdown = the concept of the disclosure will be _ in a variety of semiconductors, because the consideration is limited to a treatment similar to the one shown in the figure room. The majority of the mixed gas distribution channels 3 that are Q-treated to 'and should not have the concealed contact layer 20 and the conductive substrate 4' to cooperatively define a concealed portion of = 10 also include a majority of the contact faces 25 formed in the contact layer 20: The contact layer 2 is intended to define and define the purpose of the present invention. It is noted that 2 / is partially located between the distal portions 42 of the 2 hidden Jr electrical substrate 40 below the contact surface 25 of the ceramic contact layer 2 . For purposes of illustration, the faces 25 and 15 will be slightly removed from the contact surface 25, but the wafer will not be in contact with the wafer 25. , the ground is electrostatically fixed to the patterned bonding layer 30 is set to the Tao Jing contact layer 2〇
，開發之適合用於半導體晶圓處理室之黏合劑 2 J 乳體分配通道35 t阻礙冷煤流動，此圖案化接人 為包含-與混合氣體分配通道35成直線的間“圖9孝。可被没成 m22與靜電夾盤組件1G的混合氣體分 =連通且混合氣體分配通道35流體 ^ 就其本麵論，_導冷職體可搬冷 如合乳體分配通道35導向至冷煤通道a,其可能被設成為與二 201118979 結且可在靜電夹盤組们。的隱蔽的部分中分 f，其典型地驰或另-適合用於晶處 1 所^現 ^如廳g、氮化域另―適合用於晶圓處理室2⑻的絕緣^ 20 體分配通道35形成於靜電夹^二^ ’ 1 將混合氣 在圖1，藉由在導電性基材4〇形成^刀;f例來說， 數的氣體分配通道表面。在錄心現出相當高導電係 分配通道表面_ _ 電性氣體 地形成每—混合氣體分配通道35。在圖2表=:王現出)共同 允接觸層2〇的柱坑槽協同高導電性 上遏表面。在陶 電性基材4〇的前側表面45巾呈現出。=—表Φ，其藉由導 大規模且相當低導電係數的氣體分配通、曾:煤通道22被擴 的側壁表面29而呈現出。刀配通逼表面猎由陶究接觸層20 5。(其Γ含 隱蔽的電弧減緩層 ^會產生於當氣體分配通道35之電，作用，該電弧作 ，位置之時，或當在晶圓處理時mt：t通道35中電浆點 f任—情況下，氣體分配通道35 至通道35之時。 電弧作用形成基材4。 .隱蔽的電弧減缓層5〇，其可能包含—氧她或另-介電質的 201118979 喷塗塗層’若其包含特徵為 介電質層則表現最佳，儘管予可度考至/猶但低於約⑽障之 典型地，隱蔽的電弧減緩層50包:一 之:可行的厚度。 於約35 〇/〇陶莞接觸層2〇产 Z層，其特徵為厚度小 電弧減緩層50可包含—連續了===，考慮其隱蔽的 化紹、氧尬、絲;層或—層的氧 揍近_之_的t圖3 ^聞於龄氣體分配通道或相當 陶兗接觸層20，其典型地包含一實 包含任何適合用於晶圓處理室的陶莞，、2的5面25，可 Γ=、氧化銘和二氧化鈦介電質、=: 石夕 '氮侧、氧脉，峨紀，或^^石厌化 含微量雜質。考慮_接觸層可更近_;、包;不包 =劑、-抗蚀劑塗層、—機械保形塗層、或 導電性基材可包含任何適合用於晶圓處“ : 說，該導電物質包含-實質上成分均勻的導電^基^。貝’舉例來 吾人應注意到列舉於此之本揭露書的構件 一 ‘設置，，、“設置，，以具體化一特定的性質、或“ 方法 言，此處提及之構件所“設置”之方田，。f體而 況，因此應被視為該構件的結構特徵的^確^。子的貫體狀 吾人應注意此處所狀諸如“最好是”、地“ J措辭並非巧限制所請發明的範•辦示徵對所二二 ，說’這些用語，意欲確認本揭露書的實施例的 ^ ’或強調替代的或額外的特徵，其可能或可能不利 書的特定實施例。 路 為了敘述和界定本發明之目的，應注意到，措辭“實質 =，利躲此妹洲有的科定程度n被歸咎於任何盘 1有關的比較、數值、測量、或其他描述。措辭“實質上”和“約:， 201118979 本揭i：蚩m+才中的喊内容的基本功能之變化。 ^ 參考其具體的實施例，顯而 發明的範#係為可能。且體2界二f町料請專_圍之本 被鑑別於此為較佳的或特別的“ 樣態 制於這些實施樣態i j考慮到本揭路書不需要受限 折語。為了界定丄5:::列用其，，，為-轉 辭為-開放式轉折語，並用作導二到此用於請求項之措 相同方_，_常地使狀财式===且應以 【圖式簡單說明】 _本揭露書的具體的實施例的以 & 圖示相關連可被最有效的瞭解，相買取k與以下 的結構，且於其中： 一中^相同的參考數字表示相同 圖1為根據本揭露書的實施例一靜恭 體分配通it表面藉由形成於—導件的略圖，其氣 體分配通^表面藉由形成於：喊接組件，略圖，其氣 圖3為一靜電夾盤組件的略圖，現;、 限制於混合氣體分配通道或相當接近該t = ”弧減緩層被 圖4為根據本揭露書的實施例一、二5，和 當低導電係數的氣體分配通道表面夢电，，組件的略圖，其相 壁表面呈現。 衣囟猎由—或多個陶瓷接觸層的側 【主要元件符號說明】 10 靜電夾盤組件 曰曰 圓 20 陶瓷接觸層 22 冷卻通道 8 201118979 24 冷卻入口 25 接觸面 27 後側表面 29 侧壁表面 30 圖案化接合層 35 混合氣體分佈通道 40 導電基質 42 遠部 45 前侧表面 50 減緩層 60 製程室 70 電壓電源 80 冷卻氣體的供應器 100 晶圓製程室Developed for adhesives in semiconductor wafer processing chambers 2 J The milk dispensing channel 35 t hinders the flow of cold coal, which is included in the line between the line and the mixed gas distribution channel 35. The mixed gas of the m22 and the electrostatic chuck assembly 1G is connected and the mixed gas distribution channel 35 is fluid. In terms of its surface theory, the cold body can be moved to the cold coal distribution channel 35 to the cold coal channel. a, which may be set to be the same as the 201118979 knot and may be divided into f in the concealed part of the electrostatic chuck group, which is typically chic or otherwise suitable for use in the crystallized area The other is suitable for the wafer processing chamber 2 (8), the insulating body 20 is formed in the electrostatic chuck ^ 2 ' 1 to mix the gas in Figure 1, by forming a ^ knife on the conductive substrate 4; For example, the number of gas distribution channel surfaces. The surface of the gas distribution channel is relatively high. The surface of the gas distribution channel _ _ electrically gas is formed per-mixed gas distribution channel 35. In Figure 2 Table =: Wang is shown) The column trench of the contact layer 2〇 cooperates with the high conductivity to suppress the surface. Before the ceramic substrate 4〇 The surface 45 towel appears. = - Table Φ, which is represented by a large-scale and relatively low-conductivity gas distribution, which has been shown by the side wall surface 29 of the coal channel 22 being expanded. The contact layer 20 5 (the smear-containing arc mitigation layer) is generated when the gas distribution channel 35 is electrically, acting, the arc is made, the position, or when the wafer is processed, mt:t channel 35 Plasma point f - in the case of gas distribution channel 35 to channel 35. Arcing acts to form substrate 4. Concealed arc mitigation layer 5 〇, which may contain - oxygen her or another - dielectric 201118979 The spray coating 'has the best performance if it contains a dielectric layer, although it is typically less than about (10) barrier typical, the concealed arc mitigation layer 50 package: one: feasible Thickness. The Z layer is produced at about 35 〇 / 〇 莞 接触 contact layer 2, characterized by a small thickness of the arc mitigation layer 50 can include - continuous == =, considering its concealed chemical, oxon, silk; - the layer of oxygen 揍 _ _ t Figure 3 ^ smell of gas distribution channels or equivalent ceramic contact layer 20, which typically includes Any one contains any pottery suitable for use in the wafer processing chamber, 2, 5, 25, Γ =, oxidized and titanium dioxide dielectric, =: Shi Xi 'nitrogen side, oxygen pulse, Yu Ji, or ^ Stone anti-depletion contains trace impurities. Consider _ contact layer can be closer _;, package; no package = agent, - resist coating, - mechanical conformal coating, or conductive substrate can contain any suitable for At the wafer, ": The conductive material contains - a substantially uniform conductive material." For example, we should note that the components listed in this disclosure are 'set, set, and set. To clarify a specific property, or "method, the "set" of the components mentioned here, is Fang Tian. Therefore, it should be regarded as the structural feature of the component. The body of the child should pay attention to what is said here, such as "best is", "J wording is not a limitation of the invention of the invention, the signing of the law, the statement of the second, the words "these words, intended to confirm the disclosure of this book The embodiment may embody an alternative or additional feature that may or may not be a particular embodiment of the book. For the purposes of describing and defining the invention, it should be noted that the wording "substantially =, The degree of compromise n is attributed to any comparison, numerical, measurement, or other description of disk 1. The words "substantially" and "about:, 201118979. This is a change in the basic function of the shouting content in 蚩m+. ^ Referring to its specific embodiment, it is possible to express the invention. The second part of the town is pleased to identify it as a better or special "form" in these implementations ij. Considering that this book does not require a restricted slogan. In order to define the 丄5::: column with its,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, It should be described in a simplified manner in the following figure. The specific embodiment of the present disclosure can be most effectively understood by the & diagram, and the following structures are purchased, and in which: BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a static distribution body according to an embodiment of the present disclosure, which is formed by a guide member, and a gas distribution surface thereof is formed by: a shunting component, a thumbnail thereof, Gas diagram 3 is an outline of an electrostatic chuck assembly, now; limited to the mixed gas distribution channel or relatively close to the t = "arc slowing layer" is illustrated in Figure 4 by embodiments 1 and 2, and 5 when in accordance with the present disclosure. Conductivity of the gas distribution channel surface of the dream electricity, the outline of the component, the surface of the phase wall is presented. The side of the wall is covered by - or a plurality of ceramic contact layers [main symbol description] 10 electrostatic chuck assembly round 20 ceramic Contact layer 22 cooling channel 8 201118979 24 cooling inlet 25 45 front side surface portion 42 distal the mixed gas distribution channel layer 35 electrically conductive substrate 40 surface 27 surface 30 rear surface 29 of sidewall 50 joining the patterned layer 60 slows the process chamber 70 voltage power source 80 of the cooling gas supply 100 of the wafer process chamber