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WO2011085895A1 - Puce semi-conductrice optoélectronique - Google Patents

Puce semi-conductrice optoélectronique Download PDF

Info

Publication number
WO2011085895A1
WO2011085895A1 PCT/EP2010/069776 EP2010069776W WO2011085895A1 WO 2011085895 A1 WO2011085895 A1 WO 2011085895A1 EP 2010069776 W EP2010069776 W EP 2010069776W WO 2011085895 A1 WO2011085895 A1 WO 2011085895A1
Authority
WO
WIPO (PCT)
Prior art keywords
recesses
layer
semiconductor chip
semiconductor layer
layer sequence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/069776
Other languages
German (de)
English (en)
Inventor
Nikolaus Gmeinwieser
Matthias Sabathil
Andreas Leber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to US13/517,110 priority Critical patent/US20120273824A1/en
Priority to CN2010800588846A priority patent/CN102668139A/zh
Publication of WO2011085895A1 publication Critical patent/WO2011085895A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Definitions

  • the light extraction layer is in particular free of a material or a
  • a total area of the outer boundary surfaces is furthermore at least 10%, in particular at least 20% or at least 30% of the area of the radiation passage area.
  • the light outcoupling layer is electrically conductive.
  • a mean sheet resistance of the light extraction layer is between 2.5 ⁇ / D and 50 ⁇ / D, or between 5 ⁇ / D and 25 ⁇ / D inclusive.
  • Figure 1B is a schematic plan view of a
  • Lichtauskoppel für 4 designed with an electrically conductive material, so optionally not shown in Figure 4A electrically insulating layers may be applied in particular on lateral boundary surfaces of the semiconductor layer sequence 2 and / or on the carrier 13, as well as in all other embodiments.
  • Semiconductor layer sequence 2 rotates all around.
  • the trench 7 penetrates the light extraction layer 4 completely up to the carrier 13.
  • the facets 40 of the recesses 44 are not covered by a material of the conductive layer 5. About such a layer 5 can be energized the

Landscapes

  • Led Devices (AREA)

Abstract

L'invention concerne une puce semi-conductrice (1) optoélectronique comprenant, dans au moins une forme de réalisation, un empilement de couches semi-conductrices (2) présentant une couche active (3). La puce semi-conductrice (1) comprend, en outre, une couche de sortie de lumière (4) appliquée, au moins indirectement, sur une surface de pénétration de rayonnement (20) de l'empilement de couches semi-conductrices (2). Un matériau de la couche de sortie de lumière (4) diffère d'un matériau de l'empilement de couches semi-conductrices (2) et les indices de réfraction des matériaux de la couche de sortie de lumière (4) et de l'empilement de couches semi-conductrices (2) diffèrent au plus de 20 %. Des facettes (40) sont formées par des évidements (44) situés dans la couche de sortie de lumière (4), lesdits évidements (44) ne traversant pas complètement la couche de sortie de lumière (4). En outre, les facettes (40) présentent une surface totale qui correspond au moins à 25 % de la superficie de la surface de pénétration de rayonnement (20).
PCT/EP2010/069776 2009-12-21 2010-12-15 Puce semi-conductrice optoélectronique Ceased WO2011085895A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/517,110 US20120273824A1 (en) 2009-12-21 2010-12-15 Optoelectronic semiconductor chip
CN2010800588846A CN102668139A (zh) 2009-12-21 2010-12-15 光电子半导体芯片

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009059887.1 2009-12-21
DE102009059887A DE102009059887A1 (de) 2009-12-21 2009-12-21 Optoelektronischer Halbleiterchip

Publications (1)

Publication Number Publication Date
WO2011085895A1 true WO2011085895A1 (fr) 2011-07-21

Family

ID=43602894

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/069776 Ceased WO2011085895A1 (fr) 2009-12-21 2010-12-15 Puce semi-conductrice optoélectronique

Country Status (6)

Country Link
US (1) US20120273824A1 (fr)
KR (1) KR20120102137A (fr)
CN (1) CN102668139A (fr)
DE (1) DE102009059887A1 (fr)
TW (1) TW201133946A (fr)
WO (1) WO2011085895A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105355742A (zh) * 2015-12-04 2016-02-24 天津三安光电有限公司 发光二极管芯片及其制作方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011009369A1 (de) * 2011-01-25 2012-07-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102011117381A1 (de) 2011-10-28 2013-05-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102012220909A1 (de) 2012-09-27 2014-05-15 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln von Bereichen einer Halbleiterschicht
US20190305188A1 (en) * 2018-03-30 2019-10-03 Facebook Technologies, Llc Reduction of surface recombination losses in micro-leds
US10468552B2 (en) 2018-03-30 2019-11-05 Facebook Technologies, Llc High-efficiency micro-LEDs
US10622519B2 (en) 2018-03-30 2020-04-14 Facebook Technologies, Llc Reduction of surface recombination losses in micro-LEDs
US11309464B2 (en) 2019-10-14 2022-04-19 Facebook Technologies, Llc Micro-LED design for chief ray walk-off compensation

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081319A1 (fr) 2004-02-20 2005-09-01 Osram Opto Semiconductors Gmbh Element optoelectronique, dispositif pourvu d'une pluralite d'elements optoelectroniques et procede pour realiser un element optoelectronique
US20070267640A1 (en) 2005-05-19 2007-11-22 Samsung Electro-Mechanics Co.,Ltd. Semiconductor light emitting diode and method of manufacturing the same
US20080308833A1 (en) * 2007-05-25 2008-12-18 Toyoda Gosei Co., Ltd. Group III nitride-based compound semiconductor light-emitting device
US20090001407A1 (en) * 2006-02-17 2009-01-01 Showa Denko K.K. Semiconductor light-emitting device, manufacturing method thereof, and lamp
JP2009038355A (ja) * 2007-07-10 2009-02-19 Toyoda Gosei Co Ltd 発光装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10111501B4 (de) * 2001-03-09 2019-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
KR100909733B1 (ko) * 2002-01-28 2009-07-29 니치아 카가쿠 고교 가부시키가이샤 지지기판을 갖는 질화물 반도체소자 및 그 제조방법
KR100674858B1 (ko) * 2005-07-07 2007-01-29 삼성전기주식회사 백색 발광소자
EP2015373B1 (fr) * 2007-07-10 2016-11-09 Toyoda Gosei Co., Ltd. Dispositif électroluminescent
CN101567409A (zh) * 2008-04-25 2009-10-28 富准精密工业(深圳)有限公司 发光二极管及其制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081319A1 (fr) 2004-02-20 2005-09-01 Osram Opto Semiconductors Gmbh Element optoelectronique, dispositif pourvu d'une pluralite d'elements optoelectroniques et procede pour realiser un element optoelectronique
US20070267640A1 (en) 2005-05-19 2007-11-22 Samsung Electro-Mechanics Co.,Ltd. Semiconductor light emitting diode and method of manufacturing the same
US20090001407A1 (en) * 2006-02-17 2009-01-01 Showa Denko K.K. Semiconductor light-emitting device, manufacturing method thereof, and lamp
US20080308833A1 (en) * 2007-05-25 2008-12-18 Toyoda Gosei Co., Ltd. Group III nitride-based compound semiconductor light-emitting device
JP2009038355A (ja) * 2007-07-10 2009-02-19 Toyoda Gosei Co Ltd 発光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105355742A (zh) * 2015-12-04 2016-02-24 天津三安光电有限公司 发光二极管芯片及其制作方法

Also Published As

Publication number Publication date
CN102668139A (zh) 2012-09-12
KR20120102137A (ko) 2012-09-17
US20120273824A1 (en) 2012-11-01
DE102009059887A1 (de) 2011-06-22
TW201133946A (en) 2011-10-01

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