WO2011071198A1 - Transistor, and organic electroluminescent display device and flat panel display device comprising the transistor - Google Patents

Abstract

The present invention relates to a flexible transistor that can be bent or folded and can prevent the breakage of an insulation film or the severing of an interconnection pattern, and to an organic electroluminescent display device and flat panel display device comprising the transistor. For this purpose, the transistor of the present invention comprises a plurality of holes defined in gate, drain, and source electrodes. In addition, the organic electroluminescent display device comprises: a data line including a plurality of holes; a scan line defining a plurality of holes; and a pixel electrically connected to the data line and the scan line so as to be selected by means of a scan signal applied through the scan line and emit light at a brightness according to a data signal applied through the data line. Further, the present invention relates to a flat panel display device comprising the transistor according to embodiments of the present invention.

Description

Transistor, organic electroluminescent display and flat panel display including the same

The present invention relates to a transistor, an organic electroluminescent display and a flat panel display including the same.

Generally, a thin film transistor is a semiconductor device in which a channel region through which holes or electrons can flow is formed by doping p-type or n-type impurities in a source region and a drain region and applying a predetermined voltage to a gate electrode. .

 The thin film transistor is widely used as a switching element or driving element of various flat panel display devices such as an active matrix liquid crystal display device and an organic electroluminescent display device. As such a flat panel display, a liquid crystal display (LCD) and an organic light emitting display (OLED) are commercially available.

Recently, as various types of flat panel display devices have increased in demand, portable flat display devices that are not damaged even when the display device is folded or rolled up have been actively developed.

In order to implement the flexible flat panel display, the substrate, the wiring pattern formed on the substrate, and the thin film transistor should have flexible characteristics.

However, in the current flat panel display device, the wiring pattern and the thin film transistor are formed of a plate-shaped metal wiring or an insulating film, and the metal wiring or the insulating film is inferior in flexibility. Therefore, current flat panel display devices have low flexibility, and thus there is a limit to use them as flexible flat panel display devices.

SUMMARY OF THE INVENTION An object of the present invention is to provide a transistor capable of preventing a wiring pattern from being broken or an insulating layer broken when flexible, bent or folded, and an organic light emitting display device and a flat panel display device including the same.

In order to achieve the above object, a flexible organic light emitting display device according to an exemplary embodiment of the present invention includes a scan line in which a plurality of through holes are spaced in a length direction of a wiring pattern, and a plurality of through holes are formed in a length direction of a wiring pattern. And a pixel electrically connected to the data line and the scan line and the data line and selected by the scan signal applied from the scan line and emitting light at a brightness according to the data signal applied from the data line.

The flexible organic light emitting display device may further include a first power supply voltage line configured to supply a first power supply voltage to the pixel, and a plurality of through holes spaced apart in a length direction of a wiring pattern.

The flexible organic light emitting display device may further include a second power supply voltage line to supply a second power supply voltage to the pixel, and a plurality of through holes spaced apart in a length direction of a wiring pattern.

The pixel of the flexible organic light emitting display device may include a switching transistor having a first electrode electrically connected to the data line, and a control electrode electrically connected to the scan line, and electrically connected between the switching transistor and the first power voltage line. A capacitive element connected, a driving transistor electrically connected between the capacitive element and the second electrode of the switching transistor, and a driving transistor and a first transistor of the driving transistor electrically connected to the first power voltage line. And an organic electroluminescent device electrically connected between the second electrode and the second power voltage line.

The driving transistor of the flexible organic light emitting display device corresponds to the control electrode, and includes a gate electrode which determines whether to operate the transistor according to a signal formed on a substrate and covers an upper portion of the gate electrode. And a data electrode corresponding to the first electrode and formed on the gate insulating layer and electrically connected to the first power voltage line, and corresponding to the second electrode and formed on the gate insulating layer to form the organic electroluminescence. And a source electrode electrically connected to the device.

The data electrode and the source electrode of the flexible organic light emitting display device may be electrically connected by a nanowire layer formed of nanowires. In addition, a plurality of through holes may be formed in the data electrode, the source electrode, and the gate electrode. In addition, a plurality of through holes may be formed in the gate insulating layer.

In addition, the through hole may be formed in at least one planar shape having a circular shape or a square shape and arranged along the width direction of the wiring pattern. In addition, the through hole may have an elliptical shape or a rectangular shape having a planar shape, and at least two through holes arranged to form a diagonal line with respect to the longitudinal direction of the wiring pattern. In addition, the through hole may have an elliptical shape or a rectangular shape in a planar shape, and at least two first through holes arranged to form diagonal lines with respect to a length direction of the wiring pattern, and a plurality of holes arranged in parallel with the length direction of the wiring pattern. It may comprise a second through hole of.

The wiring pattern may include a main pattern having a through hole formed therein and an auxiliary pattern formed of a material having a lower electrical resistance than the main pattern on at least one surface of the main pattern. Furthermore, the auxiliary pattern can be formed to have a width smaller than the width (W _b1) between the through hole and the side in which the main pattern width (W _a).

The transistor of the present invention is formed on an upper portion of a substrate, a gate electrode having a plurality of holes formed therein, a gate insulating film formed so as to cover an upper circumferential substrate on which the gate electrode is formed, and an upper portion of the gate insulating film. It is formed to cover one side and the data electrode is formed to cover the other side of the upper portion in the gate insulating film, a plurality of holes formed, and comprises a source electrode connected to the data electrode and the nano-wire, the plurality of through holes are formed Can be. In addition, a plurality of through holes may be formed in the gate insulating layer.

In the transistor of the present invention, the data electrode, the source electrode, and the gate electrode include a main pattern in which a plurality of through holes are formed, and an auxiliary pattern in which at least one surface of the main pattern is formed of a material having a lower electrical resistance than the main pattern. It may be formed to include. Furthermore, the auxiliary pattern can be formed to have a width smaller than the width (W _b1) between the through hole and the side in which the main pattern width (W _a).

In the transistor of the present invention, at least one through hole may have a circular shape or a square shape, and may be formed along the width direction of the wiring pattern. In addition, the through hole may have an elliptical shape or a rectangular shape having a planar shape, and at least two through holes arranged to form a diagonal line with respect to the longitudinal direction of the wiring pattern. In addition, the through hole may have an elliptical shape or a rectangular shape in a planar shape, and at least two first through holes arranged to form diagonal lines with respect to a length direction of the wiring pattern, and a plurality of holes arranged in parallel with the length direction of the wiring pattern. It may be formed including a second through hole of.

In addition, the flat panel display of the present invention may be formed including the transistor as described above. In this case, the flat panel display may be a liquid crystal display or an organic light emitting display.

As described above, in the transistor according to the present invention, a plurality of through holes are formed in the gate electrode, the source electrode, and the drain electrode to be flexible, and the wire pattern can be prevented from being broken or damaged when bent or folded.

In addition, the organic light emitting display device and the flat panel display device according to the present invention include a flexible transistor, and a plurality of through holes are formed in the wiring pattern and the insulating layer to be flexible, and the wiring pattern is broken or the insulating layer is broken when bent or folded. Can be prevented.

1 is a block diagram of a flexible organic light emitting display device according to an exemplary embodiment of the present invention.

FIG. 2 is a circuit diagram of a pixel circuit of the flexible organic light emitting display device of FIG. 1.

3 to 5 are plan views and cross-sectional views according to an exemplary embodiment of the configuration of the pixel circuit of FIG. 1.

6 to 7 are plan views and cross-sectional views according to other exemplary embodiments of the pixel circuit of FIG. 1.

8 to 13 illustrate a plan view of a wiring pattern according to another exemplary embodiment of the present invention.

14 is a plan view of a wiring pattern according to another exemplary embodiment of the present invention.

15 is a cross-sectional view taken along the line C-C of FIG.

16 is a cross-sectional view corresponding to FIG. 15 of a wiring pattern according to another exemplary embodiment of the present invention.

17 illustrates a bending test result for a wiring pattern according to the example of FIG. 10.

18 shows the bending test results for the wiring pattern in which the through holes are not formed.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings such that those skilled in the art may easily implement the present invention.

Here, the same reference numerals are attached to parts having similar configurations and operations throughout the specification. In addition, when a part is electrically coupled to another part, this includes not only a case in which the part is directly connected, but also a case in which another part is connected in between.

First, a flat panel display including a transistor according to an exemplary embodiment of the present invention will be described. In the description of the present embodiment, an organic electroluminescent display, which is one of flat panel displays, will be described.

On the other hand, the flat panel display of the present invention includes a liquid crystal display device. That is, the transistor according to the embodiment of the present invention can be applied to the liquid crystal display device. However, since the liquid crystal display is well known to those skilled in the art, a detailed description thereof will be omitted. However, from the description of the organic electroluminescent display described below, the liquid crystal display can be easily implemented from the viewpoint of those skilled in the art. That is, the configuration of the wiring pattern and the transistor necessary for the flexible implementation of the organic EL device described below may be easily implemented in the liquid crystal display device.

Referring to FIG. 1, a configuration of a flexible organic light emitting display device according to the present invention is shown as a block diagram.

As illustrated in FIG. 1, the flexible organic electroluminescent display 10 may include a scan driver 100, a data driver 200, and an organic electroluminescent display panel (hereinafter, the panel 300). Meanwhile, the organic light emitting display device 10 described below is an example to which a transistor according to an exemplary embodiment of the present invention is applied, and may have a different structure.

The scan driver 100 may sequentially supply a scan signal to the panel 300 through a plurality of scan lines Scan [1], Scan [2],..., Scan [n].

The data driver 200 may supply a data signal to the panel 300 through a plurality of data lines Data [1], Data [2], ..., Data [m].

In addition, the panel 300 includes a plurality of scan lines Scan [1], Scan [2], ..., Scan [n] arranged in a row direction, and a plurality of data lines Data [1] arranged in a column direction. , Data [2], ..., Data [m] and the plurality of scan lines Scan [1], Scan [2], ..., Scan [n] and the plurality of data lines Data [1], Data [ 2], ..., Data [m]) may include a pixel circuit 310 (Pixel).

The plurality of scan lines Scan [1], Scan [2],..., Scan [n] are arranged at a predetermined distance apart in the row direction, and the pixel circuits 310 arranged in the row direction have the same scan line Scan [1]. ], Scan [2], ..., Scan [n]). The data lines Data [1], Data [2], ..., Data [m] are arranged at a predetermined distance apart in the column direction, and the pixel circuits 310 arranged in the column direction have the same data line. (Data [1], Data [2], ..., Data [m]).

The pixel circuit 310 may be formed in a pixel area defined by two neighboring scan lines and two neighboring data lines. Of course, as described above, a scan signal may be supplied from the scan driver 100 to the scan lines Scan [1], Scan [2], ..., Scan [n], and the data lines Data [1]. ], Data [2], ..., Data [m]) may be supplied with a data signal from the data driver 200.

Referring to FIG. 2, a circuit diagram of a pixel circuit of the flexible organic light emitting display device of FIG. 1 is illustrated.

As illustrated in FIG. 2, the pixel circuit 310 of the flexible organic light emitting display device 10 according to the present invention includes a scan line 320, a data line 330, and a first power voltage line. (VDD Line) 340, second power supply voltage line (VSS Line) 350, switching transistor (T1) 360, capacitive element (Cst) 370, driving transistor (T2) 380 and organic electric field And a light emitting device (OLED) 390. However, the pixel circuit 310 is an exemplary embodiment, and various pixel circuits may be applied to the flexible organic light emitting display device.

In the pixel circuit 310, a plurality of through holes may be formed in the wiring patterns constituting the scan line 320, the data line 330, the first power voltage line 340, and the second power voltage line 350. Therefore, when the pixel circuit 310 is bent, the through hole absorbs the stress caused by the bend to prevent the wiring patterns from being broken or damaged. In the following description, the through holes formed in the scan line 320, the data line 330, the first power voltage line 340, and the second power voltage line 350 are divided into first and fourth holes, respectively.

The scan line 320 supplies a scan signal for selecting the organic electroluminescent element 390 to emit light to the control electrode of the switching transistor 360. Of course, the scan line 320 may be electrically connected to the scan driver 100 (see FIG. 1) that generates the scan signal.

The data line 330 supplies a data signal proportional to light emission luminance to the first electrode of the capacitive element 370 and the control electrode of the driving transistor 380. Of course, the data line 330 may be electrically connected to the data driver 200 (see FIG. 1) that generates the data signal.

The first power supply voltage line 340 allows a first power supply voltage to be supplied to the organic light emitting diode 390 through the driving transistor 380.

The second power supply voltage line 350 allows a second power supply voltage to be supplied to the organic light emitting element 390.

In the switching transistor 360, a first electrode (a drain electrode or a source electrode) is electrically connected to the data line 330, and a second electrode (a source electrode or a drain electrode) is a control electrode of the driving transistor 380. Gate electrode), and a control electrode may be electrically connected to the scan line 320. When the switching transistor 360 is turned on, the switching transistor 360 supplies a data signal to the first electrode of the capacitive element 370 and the control electrode of the driving transistor 380.

In the capacitive element 370, a first electrode is electrically connected between a second electrode of the switching transistor 360 and a control electrode of the driving transistor 380, and the second electrode is formed of the first electrode of the driving transistor 380. The first electrode may be electrically connected to the first power voltage line 340. The capacitive element 370 stores a voltage corresponding to a difference between voltages applied to the first electrode and the second electrode.

In the driving transistor 380, a first electrode is electrically connected between the first power voltage line 340 and a second electrode of the capacitive element 370, and the second electrode of the organic light emitting element 390 is formed. The anode may be electrically connected to the anode, and a control electrode may be electrically connected to the second electrode of the switching transistor 360. When the data transistor is applied to the control electrode through the switching transistor 360 when the switching transistor 360 is turned on, the driving transistor 380 emits a predetermined amount of current from the first power voltage line 340. It serves to supply toward the device 390. Of course, the data signal is supplied to the first electrode of the capacitive element 370, and the capacitive element 370 charges the difference value between the data signal and the first power supply voltage. Even when the first switching device S1 is turned off, the capacitive element 370 keeps a data signal on the control electrode of the driving transistor 380 by the charging voltage of the capacitive element 370 for a predetermined time. Can be applied.

In the organic electroluminescent device 390, an anode is electrically connected to the second electrode of the driving transistor 380, and a cathode is electrically connected to the second power voltage line 350. The organic EL device 390 emits light at a predetermined brightness by a current controlled by the driving transistor 380. The organic EL device 390 includes an emission layer EML, and the emission layer EML may be any one selected from a fluorescent material, a phosphorescent material, a mixture thereof, and an equivalent thereof. However, the material or type of the emission layer EML is not limited thereto. In addition, the light emitting layer EML may be any one selected from a red light emitting material, a green light emitting material, a blue light emitting material, a mixture thereof, and an equivalent thereof, but is not limited thereto.

Referring to FIG. 3, a plan view according to an exemplary embodiment of the configuration of the pixel circuits of FIGS. 1 and 2 is illustrated. Referring to FIG. 4, a cross-sectional view of AA of FIG. 3 is illustrated. A plan view after the light emitting layer and the cathode of the organic EL device is formed.

3 to 5, the pixel circuit 310 includes a scan line 320, a data line 330, a first power voltage line 340, a second power voltage line 350, and a switching transistor 360. , A capacitive element 370, a driving transistor 380, and an organic electroluminescent element 390. The connection relationship between the components of the pixel circuit 310 is as shown in the circuit diagram of the pixel circuit 310 of FIG. 2. The pixel circuit 310 may further include a switching transistor, a capacitive element, a driving transistor, and the like for improving the characteristics of the pixel circuit 310.

The scan line 320 is formed in a wiring pattern extending in one direction and is formed of a metal electrode or a transparent electrode. Here, one direction in which the scan line 320 extends, as described with reference to FIG. 3, means a row direction. In addition, the scan lines 320 are formed by being arranged in a plurality of rows. The scan line 320 sequentially applies a scan signal to the pixel circuit 310. More specifically, the scan line 320 is electrically connected to the control electrode of the switching transistor 360 of the pixel circuit 310 to apply a scan signal to the switching transistor 360.

The scan line 320 includes a plurality of first holes 322 spaced apart from each other in a longitudinal direction extending in one direction. The first hole 322 is formed through the upper surface of the scan line 320 to the lower surface. The first hole 322 is formed so that the planar shape is a circle. The first hole 322 partially reduces the cross-sectional area of the width direction perpendicular to the length direction of the scan line 320 in the wiring pattern of the scan line 320. Therefore, the scan line 320 is formed repeatedly in a region having a large cross-sectional area and a small region along the longitudinal direction. When the scan line 320 is bent along the longitudinal direction, the region where the first hole 322 is formed absorbs the stress applied to the scan line 320 by bending. Therefore, the scan line 320 becomes more flexible, and the wire pattern is prevented from being broken or damaged when bent in one direction. On the other hand, since the width of the scan line 320 is relatively small, the degree of bending becomes small when the width is bent in the width direction so that the stress is relatively small. Accordingly, the scan line 320 is less likely to have a broken or damaged wiring pattern.

The first hole 322 has a diameter smaller than that of the scan line 320. The first hole 322 is formed such that its diameter has a size of 50 to 80% based on the width of the scan line 320. If the diameter of the first hole 322 is too large, the strength of the scan line 320 may be weakened, and thus the wiring pattern may be broken when bending occurs. In addition, when the diameter of the first hole 322 is too small, when the bending occurs, the wiring pattern may be broken due to insufficient stress absorption.

The data line 330 is formed in a wiring pattern extending in one direction and is formed of a metal electrode or a transparent electrode. Here, one direction in which the data line 330 extends will be described with reference to FIG. 3, which means a column direction. In addition, the data line 330 is formed to intersect the scan line 320. The data line 330 sequentially applies a data signal to the pixel circuit 310 arranged in a plurality of columns. More specifically, the data line 330 is electrically connected to the first electrode of the switching transistor 360 to supply a data signal to the driving transistor 380 and the capacitive element 370 through the switching transistor 360. Is authorized.

The data lines 330 are formed with a plurality of second holes 332 spaced apart from each other in a length direction that extends. The second hole 332 is formed through the upper surface of the data line 330 to the lower surface. The second hole 332 is formed so that the planar shape is a circle. The second hole 332 partially reduces the cross-sectional area of the width direction perpendicular to the length direction of the data line 330 in the wiring pattern of the data line 330. Therefore, the data line 330 has a large cross-sectional area and a small area repeatedly formed along the longitudinal direction.

The second hole 332 has a diameter smaller than that of the data line 330. The second hole 322 is preferably formed to have a diameter of 50 to 80% based on the width of the data line 330. If the diameter of the second hole 332 is too large, the strength of the data line 330 may be weakened, and thus the wiring pattern may be broken when bending occurs. In addition, when the diameter of the second hole 332 is too small, when the bending occurs, the wiring pattern may be broken because the stress cannot be properly absorbed.

The second hole may not be formed in an intersection area where the scan line 320 and the data line 330 cross each other. When the second hole is formed in the intersection area, the scan line 320 and the data line 330 may be shorted.

The first power voltage line 340 is formed in a wiring pattern extending in one direction. Here, one direction in which the first power supply voltage line 340 extends, referring to FIG. 3, means a column direction. The first power voltage line 340 may be arranged in a row direction or a column direction so as to be connected to n x m pixel circuits arranged in the organic light emitting display panel 300 (see FIG. 1). The first power supply voltage line 340 applies a first power source to the first electrode of the driving transistor 380 of the pixel circuit 310.

The first power voltage line 340 is formed with a plurality of third holes 342 spaced apart from each other along a length direction that extends. The third hole 342 is formed by penetrating from the upper surface of the first power voltage line to the lower surface. The third hole 342 is formed so that a planar shape forms a circle. The third hole 342 partially reduces the cross-sectional area in the width direction perpendicular to the length direction of the first power voltage line in the wiring pattern of the first power voltage line. Therefore, the first power supply voltage line is repeatedly formed with a large cross-sectional area and a small region along the longitudinal direction.

The third hole 342 has a diameter smaller than that of the first power voltage line. The third hole 342 is preferably formed to have a diameter of 50 to 80% based on the width of the first power voltage line. If the diameter of the third hole 342 is too large, the strength of the first power voltage line may be weakened, and thus the wiring pattern may be broken when bending occurs. In addition, when the diameter of the third hole 342 is too small, the wiring pattern may be broken because stress is not properly absorbed when bending occurs.

The third hole 342 may not be formed in an intersection area where the scan line 320 and the first power voltage line cross each other. When the third hole 342 is formed in the crossing area, the scan line 320 may be shorted to the first power voltage line 340 through the third hole 342.

The second power voltage line 350 is formed in a wiring pattern extending in one direction. Here, one direction in which the second power supply voltage line 350 extends, referring to FIG. 5, means a row direction. The second power voltage line 350 may be arranged in a row direction or a column direction so as to be connected to n x m pixel circuits 310 arranged in the organic light emitting display panel 300 (see FIG. 1). The second power supply voltage line 350 applies a second voltage to a cathode of the organic light emitting diode of the pixel circuit 310.

The second power voltage line 350 is formed by separating a plurality of fourth holes 352 along a length direction, which is one direction in which the second power voltage line 350 extends. The fourth hole 352 is formed to penetrate from the upper surface of the second power voltage line 350 to the lower surface. The fourth hole 352 is formed so that the planar shape is a circle. The fourth hole 352 partially reduces the cross-sectional area of the width direction perpendicular to the length direction of the second power voltage line 350 in the wiring pattern of the second power voltage line 350. Therefore, the second power supply voltage line 350 is formed in a region with a large cross-sectional area and a small region repeatedly along the longitudinal direction.

The fourth hole 352 has a diameter smaller than that of the second power voltage line 350. The fourth hole 352 is preferably formed to have a diameter of 50 to 80% based on the width of the second power voltage line 350. If the diameter of the fourth hole 352 is too large, the strength of the second power voltage line 350 may be weakened, and thus the wiring pattern may be broken when bending occurs. In addition, when the diameter of the fourth hole 352 is too small, the wiring pattern may be broken because stress is not properly absorbed when bending occurs.

The fourth hole 342 may not be formed in an intersection area where the data line 330 or the first power voltage line crosses each other. When the fourth hole 352 is formed in the crossing area, the scan line 320 and the first power voltage line may be shorted.

The switching transistor 360 may include a gate electrode, a gate insulating film, a drain electrode, and a source electrode. The configuration of the switching transistor 360 is the same as that of the driving transistor 380, and will be described in detail in the configuration of the driving transistor 380 illustrated in the cross-sectional view of FIG. 4.

In the capacitive element 370, a first electrode (not shown) and a second electrode (not shown) may be sequentially formed on the substrate 311, and an insulating layer may be formed between the first electrode and the second electrode. Not shown) may be formed. Since the capacitive element 370 is a general element used in an organic electroluminescent display, a detailed description of the overall structure is omitted here.

Referring to FIG. 4, the driving transistor 380 includes a substrate 311, a gate electrode 312 as a control electrode, a gate insulating layer 313, a source electrode 314 as a first electrode, and a rain electrode as a second electrode. And a nanowire layer 316 connecting the source electrode 314 and the drain electrode 315 to each other. For example, the driving transistor 380 may be formed in the shape of a transistor having a gate disposed thereon.

The gate electrode 312 may be formed as a wiring pattern by depositing and patterning a gate electrode forming material on the substrate 311.

The gate insulating layer 313 is formed to cover all of the gate electrodes 312. In addition, the gate insulating layer 313 may be formed to cover a portion of the gate electrode 312 and the substrate 311 around the outer edge of the gate electrode 312. In the gate insulating layer 313, an insulating film such as an oxide film or a nitride film may be formed in a single layer or a plurality of layers.

The source electrode 314 is formed to cover one side of the upper portion of the gate insulating layer 313. The source electrode 314 is formed to be electrically connected to the first power voltage line 340.

The drain electrode 315 is formed to cover the other side of the upper portion of the gate insulating layer 313. The drain electrode 315 is formed to correspond to the source electrode 314. The drain electrode 315 is formed to be electrically connected to an anode of the organic EL device 390.

The nanowire layer 316 is formed of at least one nanowire, and is formed to cross the gate electrode 312 on the gate insulating layer 313. The nanowire layer 316 electrically connects the drain electrode 315 and the source electrode 314. The nanowire layer 316 operates as a channel region between the drain electrode 315 and the source electrode 314. Since the driving transistor 380 has a relatively long channel region formed by nanowires, the driving transistor 380 is more flexible.

The nanowires are made of an oxide having a wild band gap and made of a material such as ZnO, In ₂ O ₃ , SnO ₂ . In addition, the nanowires may be made of a material such as Ge, In ₂ Se ₃ , GeTe, GeSb. The nanowires are formed to have a diameter of several tens of nm to several hundred nm. In addition, the nanowires are formed to have a length of several um to several tens of um.

The organic EL device 390 has a structure of an anode, an organic thin film, and a cathode, which are transparent electrodes. The organic thin film has a multilayer structure including an emission layer (EML), an electron transport layer (ETL), and a hole transport layer (HTL) to improve the light emission efficiency by improving the balance between electrons and holes. It may also comprise a separate electron injecting layer (EIL) and a hole injecting layer (HIL) layer.

The pixel circuit 310 has a plurality of holes arranged in the length direction of the scan line 320, the data line 330, the first power voltage line 340, and the second power voltage line 350. 10) can be formed more flexible. In the pixel circuit 310, since holes are formed in the wiring pattern, the wiring pattern may be prevented from being broken or damaged when the substrate is bent.

Next, a pixel circuit according to another exemplary embodiment of the present invention will be described.

Referring to FIG. 6, a plan view according to another exemplary embodiment of the configuration of the pixel circuit of FIG. 1 is illustrated. Referring to FIG. 7, a cross-sectional view of B-B of FIG. 6 is illustrated.

6 to 7, the pixel circuit 410 may include a scan line 320, a data line 330, a first power voltage line 340, and a second power voltage line VSS line (not shown in FIG. 5). Reference), a switching transistor (T1) 460, a capacitive element (Cst) 370, a driving transistor (T2) 480, and an organic light emitting element (OLED) 390. The connection relationship between the components of the pixel circuit 410 is the same as the pixel circuit 310 illustrated in FIG. 2. The pixel circuit 410 is the same as the pixel circuit 310 illustrated in FIGS. 3 to 5 except for the switching transistor 460 and the driving transistor 480. Therefore, the pixel circuit 410 will be described below with a different part from the pixel circuit 310 shown in FIGS. 3 to 5. In addition, the pixel circuit 410 uses the same reference numerals for the same elements as those of the pixel circuit 310 shown in FIGS. 3 to 5, and a detailed description thereof will be omitted.

The pixel circuit 410 has through holes formed in the switching transistor 460 and the driving transistor 480 in addition to the scan line 320, the data line 330, the first power voltage line 340, and the second power voltage line. In the following description, the through-holes formed in the switching transistor 460 and the driving transistor 480 are divided into fifth to eighth holes, respectively.

The switching transistor 460 includes a substrate 311, a gate electrode 412, a gate insulating layer 413, a source electrode 414, and a drain electrode 415. For example, the switching transistor 460 may be formed in a transistor shape in which a gate electrode is disposed above, and the switching transistor 460 is not limited to the shape of the switching transistor.

The gate electrode 412 may be formed by depositing and patterning a gate electrode forming material on the substrate 311. In this case, the gate electrode 312 includes a plurality of fifth holes 412a which are formed to penetrate from an upper surface to a lower surface. The fifth hole 412a is formed such that a planar shape forms a circle. The fifth hole 412a is formed to have an appropriate diameter according to the area of the gate electrode 412. The fifth hole 412a is preferably formed to have a size smaller than 80% based on the width in the longitudinal direction of the gate electrode. In addition, the fifth hole 412a may be formed to have the same size as any one of the first hole 322 to the fourth hole 352.

If the diameter of the fifth hole 412a is too large, the strength of the gate electrode may be weakened, and thus the wiring pattern may be broken when bending occurs. In addition, the fifth hole 412a is formed in an appropriate number according to the area of the gate electrode 412.

The gate insulating layer 413 is formed to cover all of the gate electrodes 412. The gate insulating layer 413 may be formed to cover a portion of the substrate 411 on the outer circumference of the gate electrode 412 and the gate electrode 412. The gate insulating film 413 may be formed of an insulating film such as an oxide film or a nitride film, and may be formed in a single layer or a plurality of layers.

The gate insulating layer 413 includes a plurality of sixth holes 413a which are formed to penetrate from an upper surface to a lower surface. The sixth hole 413a is formed such that a planar shape forms a circle. The sixth hole 413a is formed to have an appropriate diameter according to the area of the gate insulating film 413. In addition, the sixth hole 413a is formed in an appropriate number depending on the area of the gate insulating film 413. The sixth hole 413a may be formed to have the same size as the fifth hole 412a. The sixth hole 413a may not be formed in the gate insulating layer 413 formed on the gate electrode 412. This is to prevent the source electrode 414 and the drain electrode 415 formed on the gate insulating layer 413 from being short-circuited with the gate electrode 412.

The source electrode 414 is formed to cover one side of the upper portion of the gate insulating layer 413. In this case, the source electrode 414 includes a plurality of seventh holes 414a formed to penetrate from an upper surface to a lower surface. The seventh hole 414a is formed such that a planar shape forms a circle. The seventh hole 414a is formed to have an appropriate diameter according to the area of the source electrode 414. The seventh hole 414a may be formed to have the same size as any one of the first hole 322 to the fourth hole 352. In addition, the seventh hole 414a may be formed in an appropriate number according to the area of the source electrode 414.

The drain electrode 415 is formed on the other side of the gate insulating layer 413 so as to correspond to the source electrode 414 formed on the upper side of the gate insulating layer 413. In this case, the drain electrode 415 includes a plurality of eighth holes 415a formed to penetrate from an upper surface to a lower surface. The eighth hole 415a is formed such that a planar shape forms a circle. The eighth hole 415a is formed to have an appropriate diameter according to the area of the drain electrode 415. The eighth hole 415a may be formed to have the same size as the seventh hole 414a. In addition, the eighth hole 415a may be formed in an appropriate number according to the area of the drain electrode 415.

Since the driving transistor 480 is formed of the same component as the switching transistor 460, a detailed description of the components of the driving transistor 480 will be omitted.

The pixel circuit 410 includes a scan line 320, a data line 330, a first power voltage line 340, a second power voltage line, and a gate electrode and a gate which are components of the switching transistor 460 and the driving transistor 480. A plurality of through holes are formed in the insulating film, the source electrode, and the drain electrode. Therefore, the flexible organic light emitting display device including the pixel circuit 410 may be formed to be more flexible. That is, when the flexible organic light emitting display device is bent, each component of the pixel circuit 410 may be prevented from being cut off or damaged.

Next, a wiring pattern according to another exemplary embodiment applied to the flat panel display of the present invention will be described.

8 to 13 illustrate a plan view of a wiring pattern according to another exemplary embodiment of the present invention.

In the following description, the wiring pattern refers to a wiring pattern of scan lines, data lines, first power voltage lines, and second power voltage lines, which are various wiring electrodes included in the flat panel display device as described above. In addition, the wiring pattern refers to a wiring pattern of the data electrode, the source electrode, and the gate electrodes constituting the switching transistor and the driving transistor. Therefore, in the following description, the scan line 320, the data line 330, the first power voltage line 340, the second power voltage line 350, and the switching transistor 360 and the electrodes of the driving transistor 380 are distinguished. Commonly referred to as wiring pattern without. In addition, it demonstrates centering on the through-hole formed in a wiring pattern below. Therefore, the through hole described below includes the scan line 320, the data line 330, the first power voltage line 340, the second power voltage line 350, and the switching constituting the pixel circuit illustrated in FIGS. 3 to 5. The transistor 360 and the driving transistor 380 may be applied without distinction.

As shown in FIG. 8, the wiring pattern 510 according to another embodiment of the present invention includes a through hole 510a. The through hole 510a is formed to have a planar shape in a circular shape, and includes at least two holes formed in the width direction of the wiring pattern 510. The through hole 510a is preferably formed of at least five holes according to the width of the wiring pattern 510. The through hole 510a is formed to penetrate through the upper surface of the wiring pattern to the lower surface. Therefore, the through holes 510a are formed by arranging a plurality of holes in a line in the width direction of the wiring pattern 510. As the number of the through holes 510a increases, the wiring patterns 510 are made flexible while minimizing a decrease in the cross-sectional area of the wiring patterns 510. Since the reduction of the cross-sectional area is minimized than the case in which the wiring pattern 510 is formed in one circular shape as a whole, the electrical resistance of the wiring pattern 510 itself is not increased.

As shown in FIG. 9, the wiring pattern 520 according to another embodiment of the present invention includes a through hole 520a. The through hole 520a is formed to have a square shape in a planar shape, and includes at least two holes formed in the width direction of the wiring pattern 520. The through hole 520a is preferably formed of at least five holes according to the width of the wiring pattern 520. The through hole 520a penetrates from the upper surface of the wiring pattern to the lower surface. Accordingly, the through holes 520a are formed by arranging a plurality of holes in a line in the width direction of the wiring pattern 520. As the number of the through holes 520a increases, the wiring patterns 520 are made flexible while minimizing a decrease in the cross-sectional area of the wiring patterns 520. Since the reduction of the cross-sectional area is minimized as compared with the case in which the wiring pattern 520 is formed in one rectangular shape as a whole, the electrical resistance of the wiring pattern 520 itself is not increased.

As shown in FIG. 10, the wiring pattern 530 according to another embodiment of the present invention includes a through hole 530a. The through hole 530a is formed such that a planar shape is an elliptic shape. That is, the through hole 530a is formed in a shape in which a circle extends in the longitudinal direction of the wiring pattern 530. The through hole 530a is formed to include at least one hole formed in the width direction of the wiring pattern 530. The through hole 530a is preferably formed of at least five holes according to the width of the wiring pattern 530. The through hole 530a penetrates from an upper surface of the wiring pattern 530 to a lower surface thereof. Accordingly, the through holes 530a are formed by arranging a plurality of holes in a line in the width direction of the wiring pattern 530. As the number of through holes 530a increases, the wiring patterns 530 are made flexible while minimizing a decrease in the cross-sectional area of the wiring patterns 530.

As illustrated in FIG. 11, the wiring pattern 540 according to another embodiment of the present invention includes a through hole 540a. The through hole 540a is formed to have an elliptical shape with a planar shape. More specifically, the through hole 540a is formed in a shape in which a circle extends in the width direction of the wiring pattern 540. The through hole 540a is formed to include at least one hole formed in the width direction of the wiring pattern 540. The through hole 540a is preferably formed of at least three holes according to the width of the wiring pattern 540. The through hole 540a is formed through the upper surface of the wiring pattern 540 through the lower surface. Accordingly, the through holes 540a are formed by arranging a plurality of holes in a line in the width direction of the wiring pattern 540. The through hole 540a makes the wiring pattern 540 flexible.

As shown in FIG. 12, the wiring pattern 550 according to another embodiment of the present invention includes a first through hole 550a and a second through hole 550b. The first through hole 550a is formed in an elliptical shape or a rectangular shape in a planar shape, and is arranged in an oblique direction with respect to the length direction of the wiring pattern 550. The second through hole 550b is formed such that the planar shape is an elliptical shape or a rectangular shape and is arranged along the length direction of the wiring pattern 550. In addition, the first through hole 550a is formed at both sides of the second through hole 550b so as to be symmetrical with respect to the second through hole 550b. The first through hole 550a and the second through hole 550b penetrate from the upper surface of the wiring pattern 550 to the lower surface. Accordingly, the first through hole 550a and the second through hole 550b make the wiring pattern 550 flexible while minimizing the reduction in the cross-sectional area of the wiring pattern 550.

As shown in FIG. 13, the wiring pattern 560 according to another embodiment of the present invention includes a through hole 560a. The through holes 560a are formed in an elliptical shape or a rectangular shape in a planar shape, and are arranged in an oblique direction with respect to the length direction of the wiring pattern 560. The through holes 560a may be formed to be symmetrical in the length direction and the width direction of the wiring pattern, respectively. The through hole 560a is formed through the upper surface of the wiring pattern 560 through the lower surface. Accordingly, the through hole 560a makes the wiring pattern 560 flexible while minimizing the reduction in the cross-sectional area of the wiring pattern 560.

Next, a wiring pattern according to another embodiment of the present invention will be described.

14 is a plan view of a wiring pattern according to another exemplary embodiment of the present invention. 15 is a cross-sectional view taken along the line C-C of FIG. 16 is a cross-sectional view corresponding to FIG. 15 of a wiring pattern according to another exemplary embodiment of the present invention.

In the following description, the shape of the wiring pattern of each electrode constituting the circuit including the transistor will be described mainly. Therefore, the wiring pattern described below includes the scan line 320, the data line 330, the first power voltage line 340, the second power voltage line 350, and the switching constituting the pixel circuit shown in FIGS. 3 to 5. The transistor 360 and the driving transistor 380 may be applied without distinction. In the following description, the scan line 320, the data line 330, the first power supply voltage line 340, the second power supply voltage line 350, and the switching transistor 360 and the driving transistor 380 are used as a wiring pattern. Collectively.

As shown in FIGS. 14 and 15, the wiring pattern 570 according to another embodiment of the present invention includes a main pattern 572 having a through hole 570a and an auxiliary baton 574. . Accordingly, the auxiliary pattern 574 has a lower electrical resistance than the main pattern 572, thereby compensating for the increase in the electrical resistance of the main pattern 572 by the through hole 570a, and the wiring pattern 570. The overall increase in electrical resistance is minimized.

 14 and 15, the main pattern 572 is formed in the shape of the wiring pattern of FIG. Accordingly, the main pattern 572 is formed with a through hole 570a having a circular planar shape. The through hole 570a is formed to penetrate through the upper surface of the wiring pattern to the lower surface. In addition, the through holes 570a may be formed by arranging a plurality of holes in a line in the width direction of the wiring pattern 570. On the other hand, the main pattern 572 may be formed of any one of the wiring pattern of the wiring pattern shown in Figs.

The auxiliary pattern 574 has a plate shape and is formed in a plate shape having no through hole therein. The auxiliary pattern 574 is formed on an upper surface or a lower surface of the main pattern 572, and is formed to be in electrical contact with the main pattern 572. The auxiliary pattern 574 is formed of a material having a lower electrical resistance than the material forming the main pattern 572. For example, the main pattern 572 may be formed of a conductive metal such as silver (Ag), copper (Cu), or nickel (Ni), zinc oxide (ZnO), indium tin oxide (ITO), and tin oxide (SnO ₂ ). It may be formed of the same transparent electrode material. The auxiliary pattern 574 may be formed of a material having lower electrical resistance than the material forming the main pattern 572 of silver (Ag), copper (Cu), or nickel (Ni). In addition, when the main pattern 572 is formed of a transparent electrode material, the auxiliary pattern 574 is formed of a conductive metal. It may be formed of a conductive metal such as. Therefore, the auxiliary pattern 574 cancels the increase in the electrical resistance of the main pattern 572 by the through hole 570a, thereby minimizing the increase in the electrical resistance of the wiring pattern 570.

The auxiliary pattern 574 is formed such that the width W _a has a width smaller than the width W _b of the main pattern 572. In addition, the auxiliary pattern 574 is preferably formed such that the width W _a is smaller than the total width W _b1 + W _b2 excluding the diameter D of the through hole in the main pattern 572. Further, the auxiliary pattern 574 is more preferably formed such that the width W _a has a width smaller than the width W _b1 between the through hole 570a and the side surface in the main pattern 572. Therefore, the auxiliary pattern 574 has a width smaller than the width 572 of the main pattern, thereby increasing the electrical conductivity of the wiring pattern 570 while being flexible.

Next, a wiring pattern according to another embodiment of the present invention will be described.

16 is a cross-sectional view corresponding to FIG. 15 of a wiring pattern according to another exemplary embodiment of the present invention.

Referring to FIG. 16, the wiring pattern 580 according to another embodiment of the present invention may include a first auxiliary pattern 584 and a second auxiliary pattern formed on both surfaces of the main pattern 582 and the main pattern 582. It is formed including the pattern 586. Since the wiring pattern 580 has auxiliary patterns formed on both surfaces of the main pattern 582, electrical conductivity may be increased.

Since the main pattern 582 is formed the same as or similar to the main pattern 572 according to the exemplary embodiment of FIG. 15, a detailed description thereof will be omitted.

Since the first auxiliary pattern 584 and the second auxiliary pattern 586 are formed in the same manner as the auxiliary pattern 574 according to the exemplary embodiment of FIG. 15, detailed description thereof will be omitted.

Next, the bending test result of the wiring pattern according to the embodiment of the present invention will be described.

17 illustrates a bending test result for a wiring pattern according to the example of FIG. 10. 18 shows the bending test results for the wiring pattern in which the through holes are not formed.

The wiring pattern according to the embodiment of the present invention was manufactured by forming a wiring on copper on the flexible substrate having a size of 1 inch x 1 inch. Then, through holes were formed in the wiring pattern through etching. The wiring pattern was subjected to a bending test so that the angle formed by the inner surface of the flexible substrate was bent at 30 degrees, and the number of bending was 30 times. The wiring pattern was observed for the occurrence of cracks after the bending test. Referring to FIG. 17, it is understood that no crack is generated in the wiring pattern.

On the other hand, referring to FIG. 18, it was observed that a crack was formed in the width direction of the wiring pattern in which the through hole was not formed after 30 bending tests.

What has been described above is just one embodiment for implementing the flexible organic electroluminescent display device according to the present invention, and the present invention is not limited to the above embodiment, and as claimed in the following claims, the present invention Without departing from the gist of the present invention, those skilled in the art to which the present invention pertains to the technical spirit of the present invention to the extent that various modifications can be made.

Claims (22)

Scan lines in which a plurality of through holes are spaced apart in the longitudinal direction of the wiring pattern; A data line in which a plurality of through holes are spaced apart in the longitudinal direction of the wiring pattern; And And an pixel electrically connected to the scan line and the data line and selected by the scan signal applied from the scan line, the pixel emitting light at a brightness according to the data signal applied from the data line. . The method of claim 1, And a first power supply voltage line for supplying a first power supply voltage to the pixel and having a plurality of through holes spaced apart from each other in a length direction of a wiring pattern. The method of claim 2, And a second power supply voltage line for supplying a second power supply voltage to the pixel and having a plurality of through holes spaced apart from each other in a length direction of a wiring pattern. The method of claim 3, wherein The pixel is A switching transistor having a first electrode electrically connected to the data line, and a control electrode electrically connected to the scan line; A capacitive element electrically connected between the switching transistor and the first power voltage line; A driving transistor electrically connected between the capacitive element and the second electrode of the switching transistor, and a driving transistor electrically connected to the first power voltage line; And And an organic electroluminescent element electrically connected between the second electrode of the driving transistor and the second power supply voltage line. The method of claim 4, wherein The driving transistor A gate electrode corresponding to the control electrode and determining whether to operate the transistor according to a signal applied to and formed on a substrate; A gate insulating film formed to cover all of an upper portion of the gate electrode; A data electrode corresponding to the first electrode and formed on the gate insulating layer and electrically connected to the first power voltage line; And And a source electrode corresponding to the second electrode and formed on the gate insulating layer and electrically connected to the organic electroluminescent element. The method of claim 5, And the data electrode and the source electrode are electrically connected by a nanowire layer formed of nanowires. The method of claim 5, And a plurality of through holes formed in the data electrode, the source electrode, and the gate electrode. The method of claim 5, And a plurality of through holes are formed in the gate insulating layer. The method of claim 1, And at least one through-hole having a planar shape having a circular shape or a quadrangular shape and arranged along the width direction of the wiring pattern. The method of claim 1, And at least two through-holes having an elliptical shape or a rectangular shape, and arranged in an oblique line with respect to the length direction of the wiring pattern. The method of claim 1, The through holes may have an ellipse shape or a rectangular shape in plan view, and include at least two first through holes arranged to form diagonal lines with respect to the length direction of the wiring pattern, and a plurality of products arranged parallel to the length direction of the wiring pattern. An organic light emitting display device comprising two through holes. The method of claim 1, And wherein the wiring pattern includes a main pattern having a through hole formed therein and an auxiliary pattern formed of a material having a lower electrical resistance than the main pattern on at least one surface of the main pattern. The method of claim 11, It said auxiliary pattern is a width (W _a) is an organic electroluminescence device in which the main pattern being formed to have a width smaller than the width (W _b1) between the through hole and the side. A gate electrode formed on the substrate and having a plurality of holes formed therein; A gate insulating layer formed to cover an upper portion of the gate electrode and a substrate having an outer circumference formed with the gate electrode; A data electrode formed to cover one side of an upper portion of the gate insulating layer and having a plurality of through holes formed therein; And And a source electrode formed to cover the other side of the upper portion of the gate insulating layer, and including a source electrode connected to the data electrode by a nanowire and having a plurality of through holes formed therein. The method of claim 14, And a plurality of through holes are formed in the gate insulating film. The method of claim 14, And wherein the through-holes have a circular shape or a square shape and are formed in at least one arrayed along the width direction of the wiring pattern. The method of claim 14, And at least two through-holes having an elliptical shape or a rectangular shape having a planar shape and arranged in an oblique line with respect to the longitudinal direction of the wiring pattern. The method of claim 14, The through holes may have an ellipse shape or a rectangular shape in plan view, and include at least two first through holes arranged to form diagonal lines with respect to the length direction of the wiring pattern, and a plurality of products arranged parallel to the length direction of the wiring pattern. A transistor comprising two through holes. The method of claim 14, The data electrode, the source electrode, and the gate electrode may include a main pattern in which a plurality of through holes are formed, and an auxiliary pattern formed of a material having a lower electrical resistance than the main pattern on at least one surface of the main pattern. Transistor. The method of claim 19, And the auxiliary pattern is formed such that the width W _a has a width smaller than the width W _b1 between the through hole and the side surface in the main pattern. A flat panel display device comprising the transistor according to any one of claims 14 to 20. The method of claim 21, And the flat panel display is a liquid crystal display or an organic electroluminescent display.

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