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WO2011067903A1 - Dispositif de commutation - Google Patents

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Publication number
WO2011067903A1
WO2011067903A1 PCT/JP2010/006852 JP2010006852W WO2011067903A1 WO 2011067903 A1 WO2011067903 A1 WO 2011067903A1 JP 2010006852 W JP2010006852 W JP 2010006852W WO 2011067903 A1 WO2011067903 A1 WO 2011067903A1
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Prior art keywords
ohmic electrode
gate
gate electrode
terminal
electrode
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Ceased
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PCT/JP2010/006852
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English (en)
Japanese (ja)
Inventor
森田竜夫
中村尚幸
宮地博幸
玉岡修二
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Panasonic Corp
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Panasonic Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Definitions

  • the present disclosure relates to a switch device, and more particularly, to a switch device including a nitride semiconductor element and a driving unit thereof.
  • the loss generated in the switch device includes a conduction loss caused by energization of a current and a switching loss caused by a switching operation.
  • the conduction loss can be reduced by reducing the on-resistance of the power semiconductor element, and the switching loss can be reduced by increasing the switching speed of the power semiconductor element. For this reason, technical development relating to reduction of the on-resistance of the power semiconductor element and increase in switching speed has been performed.
  • Si silicon
  • germane-based semiconductors typified by gallium nitride (GaN) or wide-gap semiconductors such as silicon carbide (SiC) in order to overcome Si material limitations and reduce conduction loss and switching loss Is being considered.
  • GaN gallium nitride
  • SiC silicon carbide
  • a wide-gap semiconductor has a dielectric breakdown electric field about an order of magnitude higher than that of Si.
  • a charge is generated at the heterojunction interface between aluminum gallium nitride (AlGaN) and gallium nitride (GaN) due to spontaneous polarization and piezoelectric polarization.
  • AlGaN aluminum gallium nitride
  • GaN gallium nitride
  • 2DEG two-dimensional electron gas
  • a GaN transistor made of AlGaN and GaN is expected as a power semiconductor element that realizes a low on-resistance and a high breakdown voltage.
  • a GaN transistor also has a feature that the transistor itself operates in the same manner as a diode (diode operation) depending on driving conditions (Patent Document 1).
  • the current in the inductance is processed using a freewheeling diode.
  • FRD FlustFRecovery Diode
  • MOSFET Metal Organic Field-effect transistor
  • the body diode of the FRD and MOSFET generates a large recovery current, resulting in a large loss in the switch device.
  • the transistor itself operates like a diode.
  • the GaN transistor itself is used as a freewheeling diode by devising the driving conditions of the GaN transistor, there is an advantage that the recovery current can be reduced and the loss of the switch device can be reduced (for example, see Patent Document 1). reference.).
  • the number of parts of the power conversion device can be reduced, and the electrical equipment can be reduced in size and cost.
  • a conventionally known gate circuit can be used for driving the GaN transistor (see, for example, Patent Document 2).
  • the inventors of the present application have found that a recovery current larger than that of the body diode of the FRD and MOSFET is generated depending on the driving condition for operating the GaN transistor as a diode.
  • the freewheeling diode needs to perform an operation of quickly flowing the freewheeling current during switching of the inductive load and suppressing the back electromotive voltage generated between the terminals of the inductance.
  • a back electromotive voltage larger than that of the body diode of the FRD and MOSFET is generated during the diode operation of the GaN transistor depending on driving conditions.
  • the present disclosure is based on the knowledge obtained by the inventors of the present application, and aims to operate a GaN transistor as an ideal free-wheeling diode and realize a low-loss switch device.
  • the present disclosure includes a control unit that connects a first gate electrode and a first ohmic electrode via a low-resistance path when the semiconductor device is diode-operated.
  • the configuration is as follows.
  • the first exemplary switch device includes a nitride semiconductor element and a drive unit that drives the nitride semiconductor element, and the nitride semiconductor element is made of a nitride semiconductor formed on a substrate. Formed between the first ohmic electrode and the second ohmic electrode, the semiconductor layer stacked body, the first ohmic electrode and the second ohmic electrode formed on the semiconductor layer stacked body at a distance from each other A first gate electrode, a threshold voltage of the first gate electrode is 0 V or more, and the driver includes a gate circuit that applies a bias voltage to the first gate electrode, and a first gate electrode And the first terminal are connected, the first ohmic electrode and the second terminal are connected, and a switch element that allows current to flow in both directions is provided, and the bias voltage is based on the potential of the first ohmic electrode. Of the first gate electrode When performing an operation of passing a current from the first ohmic electrode to the second ohmic electrode and cutting off a
  • a second exemplary switch device includes a nitride semiconductor element and a drive unit that drives the nitride semiconductor element, and the nitride semiconductor element is a semiconductor layer stack made of a nitride semiconductor formed on a substrate. And a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor layer stack and spaced apart from each other, and a first ohmic electrode formed between the first ohmic electrode and the second ohmic electrode.
  • a gate circuit that applies a bias voltage to the first gate electrode via a gate resistor, and a gate resistor in parallel with the gate resistor.
  • a switching element that allows a current to flow in both directions, and the bias voltage is set to be equal to or lower than the threshold voltage of the first gate electrode with respect to the potential of the first ohmic electrode, and from the first ohmic electrode to the second
  • the switch element is turned on.
  • the first and second exemplary switch devices are so-called diode operations that pass current from the first ohmic electrode to the second ohmic electrode and cut off current from the second ohmic electrode to the first ohmic electrode.
  • the first ohmic electrode and the first gate electrode are connected via a low resistance path. For this reason, regardless of the setting of the turn-on time and the turn-off time of the switching operation, the speed of the transition from the on state to the off state and the transition from the off state to the on state of the diode operation can be greatly improved. Therefore, it is possible to realize a switch device that operates stably with little loss.
  • the switch element may be a MOSFET, JFET, HFET, IGBT with a diode connected in parallel, or a bipolar transistor with a diode connected in parallel.
  • the nitride semiconductor element is formed on the first active region in the semiconductor layer stack, and the switch element is formed in the second active region independent of the first active region in the semiconductor layer stack. It is good also as the structure currently made.
  • the nitride semiconductor element may include a first p-type semiconductor layer formed between the semiconductor layer stack and the first gate electrode.
  • An insulating film formed between the layer stack and the first gate electrode may be included.
  • the nitride semiconductor element has a second gate electrode formed between the first gate electrode and the second ohmic electrode, and the second gate electrode
  • the threshold voltage may be 0V or higher.
  • the nitride semiconductor element may have a second p-type semiconductor layer formed between the semiconductor layer stack and the second gate electrode.
  • An insulating film formed between the layer stack and the second gate electrode may be included.
  • the GaN transistor can be operated as an ideal free-wheeling diode, and a low-loss switch device can be realized.
  • (A) And (b) is a figure which shows the diode operation
  • (A)-(e) is a circuit diagram which shows operation
  • FIG. 1 shows an example of a cross-sectional configuration of a semiconductor device according to an embodiment.
  • the semiconductor device of this embodiment is a GaN transistor, and a buffer layer 112 made of aluminum nitride (AlN) is interposed on a conductive substrate 111 made of silicon (Si).
  • the semiconductor layer stack 113 is formed.
  • an undoped gallium nitride (GaN) layer 114 having a thickness of 2 ⁇ m and an undoped aluminum gallium nitride (AlGaN) layer 115 having a thickness of 20 nm are sequentially stacked from below.
  • a first ohmic electrode 116A and a second ohmic electrode 116B are formed at a distance from each other.
  • the first ohmic electrode 116A and the second ohmic electrode 116B are formed by stacking titanium (Ti) and aluminum (Al), and are in ohmic contact with the channel region.
  • Ti titanium
  • Al aluminum
  • FIG. 1 in order to reduce the contact resistance, a part of the AlGaN layer 115 is removed and the GaN layer 114 is dug down by about 40 nm so that the first ohmic electrode 116A and the second ohmic electrode 116B are connected to the AlGaN layer 115.
  • An example is shown in which it is formed in contact with the interface with the GaN layer 114.
  • a gate electrode 118 is formed in the region between the first ohmic electrode 116A and the second ohmic electrode 116B on the semiconductor layer stack 113 with the p-type semiconductor layer 119 interposed therebetween.
  • the gate electrode 118 is formed by stacking palladium (Pd) and gold (Au), and is in ohmic contact with the p-type semiconductor layer 119.
  • the p-type semiconductor layer 119 has a thickness of 300 nm and is made of p-type GaN doped with magnesium (Mg). The distance between the p-type semiconductor layer 119 and the second ohmic electrode 116B is designed to withstand the maximum voltage applied to the GaN transistor.
  • a pn junction is formed by the p-type semiconductor layer 119 and the AlGaN layer 115.
  • the depletion layer spreads from the p-type semiconductor layer 119 toward the substrate 111 side and the second ohmic electrode 116B side in the AlGaN layer 115 and the GaN layer 114. . Accordingly, since the current flowing through the channel region is interrupted, a normally-off operation can be performed.
  • the gate electrode 118 is formed on the p-type semiconductor layer 119. Therefore, holes can be injected into the channel region by applying a forward bias from the gate electrode 118 to the channel region generated in the interface region between the GaN layer 114 and the AlGaN layer 115.
  • the mobility of holes is much lower than the mobility of electrons, so that holes injected into the channel region hardly contribute as carriers for passing current. For this reason, since the injected holes generate the same amount of electrons in the channel region, the effect of generating electrons in the channel region is enhanced, and a function like a donor ion is exhibited. That is, since it is possible to modulate the carrier concentration in the channel region, it is possible to realize a normally-off GaN transistor having a large operating current and a low resistance.
  • GaN transistor of this embodiment when a gate voltage of 3 V or more exceeding the built-in potential of the pn junction is applied, holes are injected into the gate, and the current increases due to the mechanism described above, resulting in a large current and a low on-resistance. Can be operated. Also, with such a structure, a normally-off GaN transistor having a gate threshold voltage of about 1.5 V, for example, can be realized.
  • a first ohmic electrode wiring 206A is formed on and in contact with the first ohmic electrode 116A on the first ohmic electrode 116A, and a second ohmic electrode 116B is formed on the second ohmic electrode 116B.
  • a second ohmic electrode wiring 206B is formed in contact with the electrode.
  • a protective film 211 made of silicon nitride (SiN) is formed on the AlGaN layer 115 so as to cover the first ohmic electrode wiring 206 ⁇ / b> A, the second ohmic electrode wiring 206 ⁇ / b> B, and the gate electrode 118.
  • a back electrode 120 for applying a potential to the substrate 111 from the outside is formed on the back surface of the substrate 111, and the back electrode 120 is formed by stacking chromium (Cr) and nickel (Ni).
  • FIG. 2 has an example of a planar configuration of the semiconductor element according to the present embodiment.
  • the semiconductor device of this embodiment is a multi-finger type GaN transistor.
  • a plurality of GaN transistor units 201 having a first ohmic electrode, a gate electrode, and a second ohmic electrode whose cross-sectional structure is shown in FIG. 1 are alternately inverted around the second ohmic electrode. Can be considered.
  • the semiconductor layer stack 113 includes an active region 165 where devices are formed and an inactive region 166 where electrode pads and wiring structures are formed.
  • the inactive region 166 is a region where the resistance of the semiconductor layer stack 113 is selectively increased by implanting ions such as boron or iron.
  • a first ohmic electrode pad 221A, a second ohmic electrode pad 221B, and a gate electrode pad 223 made of gold (Au) are formed on the inactive region 166.
  • An insulating film (not shown) made of SiN is formed between the first ohmic electrode pad 221A, the second ohmic electrode pad 221B, the gate electrode pad 223, and the inactive region 166.
  • the first ohmic electrode pad 221A is connected to a first ohmic electrode (not shown) via the first ohmic electrode wiring 206A.
  • the second ohmic electrode pad 221B is connected to a second ohmic electrode (not shown) via the second ohmic electrode wiring 206B.
  • the gate electrode pad 223 is connected to the gate electrode 118 through the gate electrode wiring 208.
  • the gate electrode wiring 208 is made of the same material as the gate electrode 118.
  • the gate electrode wiring 208 and the gate electrode pad 223 are connected through an opening formed in an insulating film (not shown). With such a structure, a GaN transistor capable of large current operation can be configured.
  • FIG. 3 shows current-voltage characteristics of the GaN transistor of this embodiment.
  • the horizontal axis represents the voltage (V O1-O2 ) between the first ohmic electrode and the second ohmic electrode
  • the vertical axis represents the second ohmic electrode and the first ohmic electrode per unit gate width (1 mm).
  • a current (I O1-O2 ) flowing between the ohmic electrode and Vg is a voltage applied between the gate electrode and the first ohmic electrode.
  • the sign of V O1-O2 is positive when the potential of the second ohmic electrode is higher than the potential of the first ohmic electrode, and the potential of the first ohmic electrode is higher than the potential of the second ohmic electrode.
  • I O1-O2 positive / negative is a positive current flowing from the second ohmic electrode to the first ohmic electrode and a negative current flowing from the first ohmic electrode to the second ohmic electrode.
  • the GaN transistor has a first current that conducts a bidirectional current between the second ohmic electrode and the first ohmic electrode when Vg is equal to or higher than the threshold voltage, for example, 5V. Is possible. This is because the channel layer of the GaN transistor can pass bidirectional current.
  • FIG. 4A and 4B are diagrams illustrating the diode operation of the GaN transistor.
  • a terminal O1, a terminal O2, and a terminal G are a terminal connected to the first ohmic electrode of the GaN transistor, a terminal connected to the second ohmic electrode, and a gate electrode, respectively. It is a connected terminal.
  • the GaN transistor can be regarded as a transistor in which the terminal O1 is a source and the terminal O2 is a drain.
  • the voltage Vgs applied between the terminal G and the terminal O1, which is the source, is 0 V that is equal to or lower than the threshold voltage, and the GaN transistor operates to cut off the current flowing from the terminal O2 to the terminal O1.
  • the GaN transistor can be regarded as a transistor in which the terminal O2 is a source and the terminal O1 is a drain.
  • the voltage Vgs applied between the terminal G and the terminal O2, which is the source, is 5 V higher than the threshold voltage, and the GaN transistor operates to pass current from the terminal O1 to the terminal O2.
  • a gate current flows from the terminal O1 to the terminal G, that is, from the first ohmic electrode to the gate electrode.
  • the GaN transistor can operate as a diode but behave like a diode. Therefore, when the GaN transistor is used, for example, for switching an inductive load, if the GaN transistor is driven to perform a diode operation at a predetermined timing, an external reflux diode is not necessary.
  • FIGS. 5A and 5B show a transient diode operation of the GaN transistor.
  • FIGS. 5A and 5B show the case where the terminal G and the terminal O1 are connected via the gate resistance Rg.
  • the charge stored in the terminal G1 is discharged to the terminal O1, which is the source, when transitioning from the on state to the off state. Thereby, the current flowing from the terminal O2 to the terminal O1 is interrupted.
  • the speed of transition from the on state to the off state varies depending on the value of the gate resistance Rg.
  • the gate resistance Rg When the gate resistance Rg is increased, the speed is decreased, and a current may be instantaneously supplied from the terminal O2 to the terminal O1. Energization from the terminal O2 to the terminal O1 causes a large loss in the switch device. Therefore, it is desirable to reduce the gate resistance Rg in order to quickly transition from the on state to the off state.
  • FIG. 5 (b) shows a transition from the off state to the on state in the diode operation.
  • FIG. 5B when charge is charged from the terminal O1 to the terminal G, a current can be passed from the terminal O1 to the terminal O2.
  • the speed of transition from the off state to the on state varies depending on the value of the gate resistance Rg.
  • the gate resistance Rg When the gate resistance Rg is increased, the speed is decreased, and the current that has lost its destination momentarily increases the potential of the terminal O1, and an abnormally high voltage may be generated between the terminal O1 and the terminal O2.
  • the operation of the switch device becomes unstable due to the occurrence of an abnormal voltage. Therefore, it is desirable to reduce the gate resistance Rg in order to quickly transition from the off state to the on state.
  • the value of the gate resistance Rg determines the turn-on time and turn-off time of the switching operation. For this reason, the value of the gate resistance Rg is determined by the characteristics of the turn-on time and the turn-off time required in the switching operation, and it is difficult to set the gate resistance Rg freely. For this reason, the GaN transistor cannot be driven as an ideal freewheeling diode, and it becomes difficult to reduce the loss of the switch device using the GaN transistor.
  • a switch device using a GaN transistor is configured as shown in FIG.
  • the GaN transistor can be driven to be an ideal free-wheeling diode without affecting the timing setting during the normal switching operation.
  • the switch device of this embodiment includes a semiconductor element 301 that is a GaN transistor, and a drive unit 302 that drives the semiconductor element 301.
  • the semiconductor element 301 has a terminal O1 connected to the first ohmic electrode, a terminal O2 connected to the second ohmic electrode, and a terminal G connected to the gate electrode.
  • the drive unit 302 includes a gate circuit 311 that applies a bias voltage to the terminal G of the semiconductor element 301, a terminal O1 of the semiconductor element 301, and a switch element 312 connected between the terminals G.
  • the terminal Vo of the gate circuit 311 is connected to the terminal G of the semiconductor element 301 via the gate resistance Rg.
  • the terminal GND of the gate circuit 311 is connected to the terminal O1 of the semiconductor element 301 and the negative electrode of the power source 314.
  • a terminal VDD of the gate circuit 311 is connected to the positive electrode of the power supply 314.
  • the first terminal of the control signal source 315 is connected to the terminal VIN + of the gate circuit 311, and the second terminal is connected to the terminal VIN ⁇ of the gate circuit 311.
  • the gate circuit 311 When a voltage equal to or higher than the threshold voltage of the gate circuit 311 is applied between the terminal VIN + and the terminal VIN ⁇ , the gate circuit 311 electrically connects the terminal VDD and the terminal Vo, and the terminal GND and the terminal Vo It operates to electrically disconnect. When a voltage equal to or lower than the threshold voltage of the gate circuit 311 is applied between the terminal VIN + and the terminal VIN ⁇ , the terminal GND and the terminal Vo are electrically connected, and the terminal VDD and the terminal Vo are electrically connected. Acts to detach.
  • the gate circuit 311 may be a general gate circuit that drives the MOSFET and the IGBT.
  • the terminal G and the terminal O1 of the semiconductor element 301 can be connected by a bypass path that bypasses the gate resistance Rg. Therefore, the terminal G and the terminal O1 can be connected through a path having a lower resistance than when the switch element 312 is in the OFF state. Therefore, when the semiconductor element 301 is diode-operated, if the switch element 312 is turned on, the charge is discharged from the terminal G to the terminal O1 and the terminal O1 to the terminal G regardless of the value of the gate resistance Rg. Charge can be quickly charged. Accordingly, when the semiconductor element 301 is diode-operated, the transition between the on state and the off state and between the off state and the on state can be performed at high speed. Therefore, the recovery current can be suppressed, and the generation of a larger counter electromotive voltage can be suppressed. As a result, the operation of the switch device can be further stabilized and loss can be reduced.
  • the charging / discharging current of the feedback capacitor flows through the gate resistor Rg and the gate circuit 311 during switching in which a voltage change occurs. For this reason, a voltage is generated in the gate resistance Rg, and noise is generated between the terminal O1 and the terminal G.
  • the switching element 312 since the switching element 312 is provided, the charge / discharge current of the feedback capacitance can be passed through the switching element having a lower on-resistance than the gate resistance Rg, so that the gate noise generated between the terminal O1 and the terminal G is reduced. Can be reduced. Thereby, an effect of making it difficult to cause malfunction due to noise can be obtained.
  • gate noise when gate noise occurs, in order to prevent malfunction due to noise, it is generally performed to turn off the GaN transistor by applying a negative bias.
  • a negative bias is used when the GaN transistor is turned off, a large offset voltage is generated when the diode is operated. For this reason, on-resistance increases during diode operation.
  • gate noise can be suppressed, so that malfunction can be prevented without using a negative bias when the GaN transistor is turned off. Therefore, the on-resistance when the semiconductor element 301 is diode-operated can be reduced, and the power converter can be further reduced in loss.
  • a negative bias power supply since a negative bias power supply is not required, there are the advantages of reducing the number of components, downsizing the device, and reducing the cost.
  • FIG. 7 shows the operation timing of the drive unit 302.
  • FIGS. 8A to 8E show the operating states of the switch device in the periods a to e shown in FIG. 7, respectively.
  • the driving unit 302 suppresses noise and enables high-speed diode operation by turning on the switch element 312 and connecting the terminal O1 and the terminal G with a low resistance when the semiconductor element 301 is in the off state. . Therefore, when the semiconductor element 301 performs a switching operation and when the semiconductor element 301 is in an on state, the switch element 312 is turned off.
  • the signal of the control signal source 315 is in an off state that is equal to or lower than the threshold voltage of the gate circuit 311, and the gate voltage applied to the terminal G of the semiconductor element 301 is also equal to or lower than the threshold voltage. It becomes an off state.
  • the switch element 312 is in an on state.
  • a period b when the signal of the control signal source 315 changes from an off state to an on state that is equal to or higher than the threshold voltage of the gate circuit 311, the switch element 312 is off and enters a rising state in which the gate voltage increases. Even when the gate voltage rises in the period c and the semiconductor element 301 transits to the on state, the switch element 312 maintains the off state.
  • the gate voltage is in a falling state that gradually decreases.
  • the switch element 312 maintains the OFF state for the delay time T_delay from the moment when the signal of the control signal source 315 transitions from the ON state to the OFF state. In the subsequent period e, the switch element 312 is turned on.
  • the delay time T_delay is preferably the time until the gate voltage completely falls. However, in order to provide a design margin, a desired time may be added to the time until the gate voltage transitions to the off state.
  • the switch element 312 may be in the off state slightly before the moment when the control signal transitions from the off state to the on state. In this way, the gate voltage can be applied to the semiconductor element 301 more stably.
  • the switch element 312 may be a semiconductor switch that allows current to flow in both directions.
  • the on-resistance value of the switch element 312 only needs to be smaller than the resistance value of the gate resistor Rg and the resistance value of the path from the Vo terminal of the gate circuit 311 to the GND terminal of the gate circuit 311.
  • MOSFET Metal Organic semiconductor field / Effect / Transistor
  • HFET Heterojunction / Field / Effect / Transistor
  • a bipolar transistor in which diodes are connected in parallel or an IGBT in which diodes are connected in parallel
  • the switch element 312 only needs to have a withstand voltage capable of driving a voltage between the gate and the source of the semiconductor element 301.
  • a semiconductor element having a withstand voltage of about 20 V can be used as the switch element 312. Since the low withstand voltage semiconductor switch element can be easily reduced in on-resistance, the chip size can be reduced and the entire switch device can be downsized. Note that FIG.
  • FIG. 9 shows an example of a specific circuit configuration of the switch device of the present embodiment. Note that the circuit configuration shown in FIG. 9 is an example, and any configuration may be used as long as a similar function is achieved.
  • the first terminal of the control signal source 315 is connected to the input of the first NOT circuit 321.
  • the output of the first NOT circuit 321 is connected to the second NOT circuit 322 and the delay circuit 323.
  • the output of the second NOT circuit 322 is connected to the VIN terminal of the gate circuit 311.
  • the delay circuit 323 has a diode 325 having an anode connected to the output of the first NOT circuit 321 and a cathode connected to the gate of the switch element 312 made of a MOSFET, a resistor 326 connected in parallel to the diode 325, a first One terminal has a capacitor 327 connected to the cathode of the diode 325.
  • the terminals VDD of the gate circuit 311, the first NOT circuit 321, and the second NOT circuit 322 are connected to the positive electrode of the power supply 314.
  • the O1 terminal is connected to the negative electrode of the power source 314.
  • the Vo terminal of the gate circuit 311 is connected to the terminal G of the semiconductor element 301 via the gate resistance Rg, and the drain terminal of the switch element 312 is connected to the terminal G of the semiconductor element 301.
  • the gate resistance Rg may be an independent resistance element, or may be one in which the wiring material, thickness, length, and the like are set so as to have a predetermined resistance value.
  • the output voltage of the power source 314 is assumed to be 5V.
  • the output of the first NOT circuit 321 is, for example, 5V.
  • 5 V is statically applied to the gate of the switch element 312 and the switch element 312 is in the ON state. Therefore, 0 V is applied between the terminal G and the terminal O1 of the semiconductor element 301.
  • the output of the second NOT circuit 322 is 0 V, and the voltage is input to the terminal VIN of the gate circuit 311. For this reason, the gate circuit 311 electrically connects the terminal Vo and the terminal GND.
  • the control signal source 315 changes from the off state to the on state (5V)
  • the output of the first NOT circuit 321 becomes 0V.
  • the electric charge stored in the gate of the switch element 312 is discharged through the diode 325 and the resistor 326.
  • the gate potential of the switch element 312 becomes 0 V, and the switch element 312 instantaneously transitions to the off state.
  • the gate circuit 311 electrically connects the terminal Vo and the terminal VDD. For this reason, the voltage at the terminal G of the semiconductor element 301 increases according to the rate of change determined by the gate resistance Rg, and becomes constant at a predetermined voltage.
  • the output of the first NOT circuit 321 becomes 5V.
  • the gate voltage of the switch element 312 increases according to a time constant determined by the resistance value of the resistor 326 and the capacitance of the capacitor 327. Accordingly, the switch element 312 is kept off until the gate voltage of the switch element 312 exceeds the threshold voltage, and when the threshold voltage is exceeded, the switch element 312 is turned on.
  • T_delay in FIG. 7 can be set by the resistor 326, the capacitor 327, and the threshold voltage of the switch element 312.
  • the switch element 312 has an on-resistance that provides a desired peak current.
  • a desired resistance value may be realized by connecting a resistor in series with the switch element.
  • the on-resistance of the switch element 312 may be set, or a separate resistance element may be inserted.
  • the switch element 312 may be a GaN transistor.
  • the switch element 312 can be manufactured in the same chip as the semiconductor element 301, and the switch element 312 can be disposed in the vicinity of the terminal G that is the gate and the terminal O 1 that is the source of the semiconductor layer 301. Since the wiring connecting the switch element 312 to the terminal G and the terminal O1 is shorter than the case where the semiconductor element 301 and the switch element 312 are formed on separate chips, the parasitic inductance generated with the wiring is reduced. be able to. By reducing the parasitic inductance, a high-frequency gate current generated when switching at higher speed can be passed through the switch element 312 with a low impedance. Thereby, generation
  • a switch element 312 is formed on the semiconductor layer stack 113 in addition to the structure of the semiconductor element shown in FIG.
  • the switch element 312 is a GaN transistor having a cross-sectional configuration similar to that shown in FIG. 1 and formed in an active region 167 independent of the active region 165 of the semiconductor element.
  • the drain electrode 417 of the switch element 312 is connected to the gate electrode wiring 208 of the semiconductor element, and the source electrode 416 of the switch element 312 is connected to the first ohmic electrode wiring 206A of the semiconductor element.
  • the gate electrode 418 of the switch element 312 is connected to the gate electrode pad 423 of the switch element 312 formed on the inactive region 166.
  • the switching element 312 is turned on to connect the terminal G and the terminal O1 through a path having a lower resistance than that in the off state. Can connect. Accordingly, it is possible to improve the speed of the transition from the on state to the off state and the transition from the off state to the on state in the diode operation. As a result, it is possible to reduce the loss due to the recovery current and to suppress the generation of the counter electromotive voltage of the inductance.
  • FIG. 13 An example of a double-gate semiconductor element 304 is shown in FIG.
  • the same components as those in FIG. between the first ohmic electrode 116A and the second ohmic electrode 116B, the first gate electrode 118A and the second gate electrode 118B are respectively connected to the first p-type semiconductor layer 119A and the first ohmic electrode 119A. 2 p-type semiconductor layers 119B.
  • the first gate electrode 118A corresponds to the G1 terminal in FIG. 12
  • the second gate electrode 118B corresponds to the G2 terminal.
  • the double-gate semiconductor element 304 can be operated as a bidirectional switch or a diode.
  • a voltage higher than the threshold voltage of the first gate electrode 118A is applied to the first gate electrode 118A and the second gate electrode 118B with reference to the first ohmic electrode 116A, respectively, and the second ohmic electrode
  • a bidirectional energization operation in which a current flows bidirectionally between the first ohmic electrode 116A and the second ohmic electrode 116B is performed. Can be made.
  • the bias voltage applied to the first gate electrode 118A and the second gate electrode 118B is set to a voltage equal to or lower than the threshold voltage, whereby the bidirectional voltage is provided between the first ohmic electrode 116A and the second ohmic electrode 116B. Bidirectional cutoff operation in which no current flows can be performed.
  • the first ohmic electrode 116A to the second ohmic electrode 116B by applying a voltage equal to or higher than the threshold voltage to the first gate electrode 118A and applying a voltage equal to or lower than the threshold voltage to the second gate electrode 118B, the first ohmic electrode 116A to the second ohmic electrode 116B.
  • diode operation can be performed in which a current flows from the first ohmic electrode 116A to the second ohmic electrode 116B.
  • a voltage equal to or lower than the threshold voltage to the first gate electrode 118A and applying a voltage equal to or higher than the threshold voltage to the second gate electrode 118B a current flows from the first ohmic electrode 116A to the second ohmic electrode 116B.
  • a diode operation can be performed in which no current flows from the first ohmic electrode 116A to the second ohmic electrode 116B.
  • the basic operation in the diode operation is the same as that of the single gate semiconductor element. Therefore, the first driving unit 302A is connected between the first gate terminal G1 and the first ohmic terminal O1, and the second driving terminal 302 is connected between the second gate terminal G2 and the second ohmic terminal O2. If the two driving units 302B are connected, the speed of the transition from the on state to the off state and the transition from the off state to the on state in the diode operation can be improved.
  • a drive unit having a configuration in which the switch element 312 is connected in parallel with the gate resistor may be used.
  • the double gate semiconductor element may be a normally-off type, and the gate may have a MIS structure or the like.
  • the example of the semiconductor element having the p-type semiconductor layer between the gate electrode and the semiconductor layer stack has been described.
  • a normally-off GaN transistor having a threshold voltage of 0 V or more It can be operated.
  • a so-called MIS (Metal-Insulator-Semiconductor) transistor having an insulating film between the gate electrode and the semiconductor layer stack may be used.
  • MIS transistor Metal-Insulator-Semiconductor
  • the switch device allows a GaN transistor to operate as an ideal free-wheeling diode to realize a low-loss switch device, and is particularly useful as a high-speed and low-loss switch device used in a power conversion circuit.

Landscapes

  • Electronic Switches (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention concerne un dispositif de commutation qui est équipé d'un élément semi-conducteur au nitrure (301), et d'une partie d'entraînement (302) qui entraîne l'élément semi-conducteur au nitrure (301). L'élément semi-conducteur au nitrure (301) possède : une première électrode ohmique, une seconde électrode ohmique, et une première électrode de grille. La partie d'entraînement (302) possède un circuit de grille (311) dans lequel une tension de polarisation est appliquée à la première électrode de grille; et un élément de commutation (312) connecté entre la première électrode de grille et la première électrode ohmique, et dans lequel le courant électrique circule de manière bidirectionnelle. La partie d'entraînement (302) met l'élément de commutation (312) en état passant lorsque le courant électrique est amené de la première électrode ohmique vers la seconde électrode ohmique, et lorsqu'a lieu une opération de blocage du courant électrique de la seconde électrode ohmique vers la première électrode ohmique.
PCT/JP2010/006852 2009-12-03 2010-11-24 Dispositif de commutation Ceased WO2011067903A1 (fr)

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JP2009275288A JP2013042193A (ja) 2009-12-03 2009-12-03 スイッチ装置
JP2009-275288 2009-12-03

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JP2013171851A (ja) * 2012-02-17 2013-09-02 Fuji Electric Co Ltd トレンチゲート型ｍｏｓ半導体装置のトレンチ平均深さおよびスイッチング特性の評価方法および半導体チップの選別方法
JP2014130991A (ja) * 2012-12-31 2014-07-10 Win Semiconductors Corp 化合物半導体ｅｓｄ保護装置
FR3017995A1 (fr) * 2014-02-27 2015-08-28 Commissariat Energie Atomique Dispositif electronique a transistor hemt polarise en inverse
CN108599747A (zh) * 2018-04-09 2018-09-28 北京市科通电子继电器总厂有限公司 双信号通断控制电路及系统
EP3934100A3 (fr) * 2020-06-30 2022-02-09 Apple Inc. Pince actif rapide pour convertisseurs de puissance

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JP6223938B2 (ja) * 2014-09-19 2017-11-01 株式会社東芝 ゲート制御装置、半導体装置、及び半導体装置の制御方法
US9696738B2 (en) * 2014-12-24 2017-07-04 Texas Instruments Incorporated Low power ideal diode control circuit
EP3255655A4 (fr) 2015-02-04 2018-10-03 Mitsubishi Electric Corporation Dispositif semi-conducteur
CN107947742B (zh) * 2017-12-11 2021-07-02 湖南时变通讯科技有限公司 一种用于控制耗尽型功率器件的时序保护电路

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WO2008155917A1 (fr) * 2007-06-19 2008-12-24 Panasonic Corporation Circuit de commande d'élément de commutation
JP2009081962A (ja) * 2007-09-26 2009-04-16 Sharp Corp スイッチング回路、回路、並びにスイッチング回路及び駆動パルス生成回路を含む回路
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WO2013011617A1 (fr) * 2011-07-15 2013-01-24 パナソニック株式会社 Dispositif semi-conducteur et procédé de fabrication de celui-ci
US9842905B2 (en) 2011-07-15 2017-12-12 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method for fabricating the same
JP2013171851A (ja) * 2012-02-17 2013-09-02 Fuji Electric Co Ltd トレンチゲート型ｍｏｓ半導体装置のトレンチ平均深さおよびスイッチング特性の評価方法および半導体チップの選別方法
JP2014130991A (ja) * 2012-12-31 2014-07-10 Win Semiconductors Corp 化合物半導体ｅｓｄ保護装置
FR3017995A1 (fr) * 2014-02-27 2015-08-28 Commissariat Energie Atomique Dispositif electronique a transistor hemt polarise en inverse
EP2913849A1 (fr) * 2014-02-27 2015-09-02 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Dispositif electronique a transistor hemt polarise en inverse
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CN108599747A (zh) * 2018-04-09 2018-09-28 北京市科通电子继电器总厂有限公司 双信号通断控制电路及系统
EP3934100A3 (fr) * 2020-06-30 2022-02-09 Apple Inc. Pince actif rapide pour convertisseurs de puissance
US11258443B2 (en) 2020-06-30 2022-02-22 Apple Inc. Fast active clamp for power converters
EP4109754A1 (fr) * 2020-06-30 2022-12-28 Apple Inc. Pince actif rapide pour convertisseurs de puissance
US11545973B2 (en) 2020-06-30 2023-01-03 Apple Inc. Fast active clamp for power converters

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