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WO2009153965A1 - Technique d'attaque de grille pour des interrupteurs bidirectionnels et convertisseur de puissance qui utilise ceux-ci - Google Patents

Technique d'attaque de grille pour des interrupteurs bidirectionnels et convertisseur de puissance qui utilise ceux-ci Download PDF

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Publication number
WO2009153965A1
WO2009153965A1 PCT/JP2009/002722 JP2009002722W WO2009153965A1 WO 2009153965 A1 WO2009153965 A1 WO 2009153965A1 JP 2009002722 W JP2009002722 W JP 2009002722W WO 2009153965 A1 WO2009153965 A1 WO 2009153965A1
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Prior art keywords
mode
gate
terminal
bidirectional switch
electrode
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PCT/JP2009/002722
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English (en)
Japanese (ja)
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森本篤史
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Panasonic Corp
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Panasonic Corp
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/66—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal
    • H02M7/68—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters
    • H02M7/72—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/79—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/797—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes

Definitions

  • the present invention relates to a gate drive method for a bidirectional switch having four states by controlling a gate signal, and a power converter using the same.
  • Patent Document 1 proposes a power conversion circuit using a bidirectional switch.
  • a driving method of the bidirectional switch described in Patent Document 1 will be described with reference to FIG.
  • FIG. 12 is an explanatory diagram of a bidirectional switch driving method in Patent Document 1.
  • FIG. 12 shows driving of the gate electrode when the potential of the main electrode corresponding to the low voltage side is lower than the potential of the main electrode corresponding to the high voltage side.
  • the element is non-conductive, and the gate electrode potential VG1 is lower than the gate threshold, and the gate electrode potential VG2 is higher than the gate threshold.
  • VG1 is set to the gate threshold value or more, and after the delay time ⁇ 1, VG2 is set to the gate threshold value or less to conduct the element.
  • VG2 is set to the gate threshold value or more, and after the delay time ⁇ 2, VG1 is set to the gate threshold value or less to put the element in the blocking state.
  • the operation is performed in the same way by blocking the VG1 and VG2 of the gate electrode. The control which switches is performed.
  • Patent Document 1 a general power conversion circuit (for example, an inverter device) combining a unidirectional switch and a diode is conceivable.
  • a general power conversion circuit for example, an inverter device
  • the present invention provides a gate drive method for a bidirectional switch with low loss while preventing unintentional overcurrent and overvoltage from occurring during control.
  • the gate switch driving method of the bidirectional switch according to the present invention is applied to a bidirectional switch having the following configuration.
  • a semiconductor layer stack having a channel formed on a substrate, and a first ohmic electrode and a second ohmic electrode formed on the semiconductor layer stack at a distance from each other are provided. Furthermore, it has the 1st gate electrode and the 2nd gate electrode which were formed in order from the 1st ohmic electrode side between the 1st ohmic electrode and the said 2nd ohmic electrode. Further, a first p-type semiconductor layer formed between the semiconductor layer stack and the first gate electrode, and a second p-type formed between the semiconductor layer stack and the second gate electrode. A semiconductor.
  • a gate drive signal is input between the first gate terminal that inputs a gate drive signal between the first ohmic electrode and the first gate electrode, and between the second ohmic electrode and the second gate electrode. And a second gate terminal. Furthermore, a drain terminal connected to the first ohmic electrode and a source terminal connected to the second ohmic electrode are provided. Further, when only the first gate terminal is turned on, the first mode operates as a semiconductor in which a bidirectional device and a reverse diode connected in series are connected in series from the drain terminal to the source terminal. Further, when only the second gate terminal is turned on, a forward diode and an on-state bidirectional device operate as a semiconductor connected in series from the drain terminal to the source terminal.
  • the present invention provides a gate drive method for a bidirectional switch having such a configuration, wherein the first mode or the third mode or the third mode is shifted to at least one of the fourth mode and the third mode. Control is performed so as to interpose at least one of the second modes.
  • FIG. 1 is a configuration diagram of a bidirectional switch according to Embodiment 1 of the present invention.
  • FIG. 2A is a first equivalent circuit diagram of the bidirectional switch.
  • FIG. 2B is a second equivalent circuit diagram of the bidirectional switch.
  • FIG. 2C is a third equivalent circuit diagram of the bidirectional switch.
  • FIG. 3A is a first voltage / current correlation diagram of the bidirectional switch.
  • FIG. 3B is a second voltage / current correlation diagram of the bidirectional switch.
  • FIG. 3C is a third voltage-current correlation diagram of the bidirectional switch.
  • FIG. 4 is a diagram showing an operation mode of the bidirectional switch.
  • FIG. 5 is an explanatory diagram of control means for performing gate drive of the bidirectional switch.
  • FIG. 5 is an explanatory diagram of control means for performing gate drive of the bidirectional switch.
  • FIG. 6 is a diagram showing an on / off table of the bidirectional switch.
  • FIG. 7 is a configuration diagram of an inverter device using the bidirectional switch.
  • FIG. 8 is a diagram showing a signal delay generation circuit of the inverter device.
  • FIG. 9A is a first mode transition diagram of the bidirectional switch according to Embodiment 2 of the present invention.
  • FIG. 9B is a second mode transition diagram of the bidirectional switch.
  • FIG. 10 is a mode transition diagram of the bidirectional switch according to Embodiment 3 of the present invention.
  • FIG. 11 is a mode transition diagram of the bidirectional switch according to Embodiment 4 of the present invention.
  • FIG. 12 is an explanatory diagram of a conventional method for driving a bidirectional switch.
  • FIG. 1 is a configuration diagram of a bidirectional switch according to Embodiment 1 of the present invention.
  • the bidirectional switch 1 of the present embodiment includes a first gate terminal 2, a second gate terminal 3, a drain terminal 4, and a source terminal 5.
  • the bidirectional switch 1 has a thickness of 1 ⁇ m in which aluminum nitride (AlN) having a thickness of 10 nm and gallium nitride (GaN) having a thickness of 10 nm are alternately stacked on a substrate 6 made of silicon (Si).
  • the buffer layer 7 is formed.
  • a semiconductor layer stack 8 is formed on the buffer layer 7.
  • the first semiconductor layer is an undoped gallium nitride (GaN) layer 9 having a thickness of 2 ⁇ m
  • the second semiconductor layer is an n-type aluminum gallium nitride (AlGaN) layer 10 having a thickness of 20 nm.
  • GaN undoped gallium nitride
  • AlGaN aluminum gallium nitride
  • 2DEG two-dimensional electron gas
  • a first ohmic electrode 11A and a second ohmic electrode 11B are formed at a distance from each other.
  • titanium (Ti) and aluminum (Al) are laminated.
  • the first ohmic electrode 11A and the second ohmic electrode 11B form an ohmic junction with the channel region, respectively.
  • a part of the AlGaN layer 10 is removed and the GaN layer 9 is dug down by about 40 nm, and the first ohmic electrode 11A and the second ohmic electrode 11B are connected to the AlGaN layer 10, the GaN layer 9, and the like. It is formed so as to be in contact with the interface.
  • the first ohmic electrode 11 ⁇ / b> A and the second ohmic electrode 11 ⁇ / b> B may be formed on the AlGaN layer 10.
  • the first p-type semiconductor layer 12A and the second p-type semiconductor layer 12B are spaced from each other. And selectively formed.
  • a first gate electrode 13A is formed on the first p-type semiconductor layer 12A
  • a second gate electrode 13B is formed on the second p-type semiconductor layer 12B.
  • the first gate electrode 13A and the second gate electrode 13B are formed by stacking palladium (Pd) and gold (Au), respectively.
  • the first gate electrode 13A and the second gate electrode 13B are in ohmic contact with the first p-type semiconductor layer 12A and the second p-type semiconductor layer 12B, respectively.
  • a protective film 14 made of silicon nitride (SiN) is formed so as to cover the AlGaN layer 10, the first p-type semiconductor layer 12A, and the second p-type semiconductor layer 12B.
  • SiN silicon nitride
  • the first p-type semiconductor layer 12A and the second p-type semiconductor layer 12B each have a thickness of 300 nm and are made of p-type GaN doped with magnesium (Mg).
  • the first p-type semiconductor layer 12A, the second p-type semiconductor layer 12B, and the AlGaN layer 10 form PN junctions.
  • the depletion layer spreads from the first p-type GaN layer into the channel region, so that the current flowing through the channel is cut off. can do.
  • the bidirectional switch 1 realizes a so-called normally-off semiconductor element.
  • the potential of the first ohmic electrode 11A is V1
  • the potential of the first gate electrode 13A is V2
  • the potential of the second gate electrode 13B is V3
  • the potential of the second ohmic electrode 11B is V4.
  • V2 is higher than V1 by 1.5V or more
  • the depletion layer extending from the first p-type semiconductor layer 12A into the channel region is reduced, so that a current can flow in the channel region.
  • V3 is higher than V4 by 1.5V or more
  • the depletion layer extending from the second p-type semiconductor layer 12B into the channel region is reduced, and current can flow through the channel region. That is, the so-called threshold voltage of the first gate electrode 13A and the so-called threshold voltage of the second gate electrode 13B are both 1.5V.
  • the threshold voltage of the first gate electrode 13A at which the depletion layer extending in the channel region below the first gate electrode 13A is reduced and current can flow through the channel region is set to the first threshold voltage.
  • the threshold voltage is used.
  • the depletion layer extending in the channel region below the second gate electrode 13B is reduced, and the threshold voltage of the second gate electrode 13B that allows current to flow through the channel region is reduced to the second threshold voltage.
  • the distance between the first p-type semiconductor layer 12A and the second p-type semiconductor layer 12B can withstand the maximum voltage applied to the first ohmic electrode 11A and the second ohmic electrode 11B.
  • a gate drive signal (that is, a control signal to the first gate terminal 2) is input between the first ohmic electrode 11A and the first gate electrode 13A.
  • a gate drive signal (that is, a control signal to the second gate terminal 3) is input between the second ohmic electrode 11B and the second gate electrode 13B.
  • the source terminal 5 is connected to the first ohmic electrode 11A
  • the drain terminal 4 is connected to the second ohmic electrode 11B
  • the first gate terminal 2 is connected to the first gate electrode 13A
  • the second gate terminal. 3 is connected to the second gate electrode 13B.
  • the drain terminal 4 and the source terminal 5 are connected to the power supply line.
  • the potential of the first ohmic electrode 11A is 0 V
  • the voltage applied to the first gate terminal 2 is Vg1
  • the voltage applied to the second gate terminal 3 is Vg2.
  • the voltage between the second ohmic electrode 11B and the first ohmic electrode 11A is Vs2s1
  • the current flowing between the second ohmic electrode 11B and the first ohmic electrode 11A is Is2s1.
  • V4 When V4 is higher than V1, for example, when V4 is + 100V and V1 is 0V, the input voltages Vg1 and Vg2 of the first gate terminal 2 and the second gate terminal 3 are set to the first threshold voltage and the first threshold voltage, respectively.
  • the voltage is equal to or lower than the threshold voltage of 2, for example, 0V.
  • the depletion layer extending from the first p-type semiconductor layer 12A extends in the channel region toward the second p-type GaN layer, so that the current flowing through the channel can be blocked. Therefore, even when V4 is a positive high voltage, it is possible to realize a cut-off state in which a current flowing from the second ohmic electrode 11B to the first ohmic electrode 11A is cut off.
  • V4 when V4 is lower than V1, for example, even when V4 is ⁇ 100 V and V1 is 0 V, the depletion layer extending from the second p-type semiconductor layer 12B is formed in the channel region in the first p-type semiconductor layer. The current spreads in the direction of 12A and can flow through the channel. For this reason, even when a negative high voltage is applied to the second ohmic electrode 11B, the current flowing from the first ohmic electrode 11A to the second ohmic electrode 11B can be blocked. That is, the bidirectional current of the bidirectional switch 1 can be cut off.
  • the first gate electrode 13A and the second gate electrode 13B share a channel region for ensuring a withstand voltage. Therefore, this element can realize the bidirectional switch 1 with the area of the channel region for one element.
  • the bidirectional switch 1 as a whole, the chip area is smaller than when using a heterojunction field effect transistor (AlGaN / GaN-HFET) composed of two diodes and two normally-off AlGaN / GaN. can do. Therefore, the bidirectional switch 1 can be reduced in cost and size.
  • AlGaN / GaN-HFET heterojunction field effect transistor
  • Vg1 and Vg2 which are input voltages of the first gate terminal 2 and the second gate terminal 3 are voltages higher than the first threshold voltage and the second threshold voltage, respectively, for example, 5V
  • the first voltage Both of the voltages applied to the gate electrode 13A and the second gate electrode 13B are higher than the threshold voltage. Accordingly, since the depletion layer does not extend from the first p-type semiconductor layer 12A and the second p-type semiconductor layer 12B to the channel region, the channel region is also formed below the first gate electrode 13A. It is not pinched off on the lower side of 13B. As a result, it is possible to realize a conductive state in which a current flows bidirectionally between the first ohmic electrode 11A and the second ohmic electrode 11B.
  • the bidirectional switch 1 having the first gate terminal 2 and the second gate terminal 3 is represented by an equivalent circuit, a circuit in which a first transistor 15 and a second transistor 16 are connected in series as shown in FIG. 2A.
  • the source (S) of the first transistor 15 corresponds to the first ohmic electrode 11A
  • the gate (G) of the first transistor 15 corresponds to the first gate electrode 13A
  • the source ( S) corresponds to the second ohmic electrode 11B
  • the gate (G) of the second transistor 16 corresponds to the second gate electrode 13B.
  • Vg1 is 5V and Vg2 is 0V
  • Vg2 is 0V
  • the fact that Vg2 is 0V is equivalent to the state where the gate and the source of the second transistor 16 are short-circuited.
  • the source (S) of the second transistor 16 shown in FIG. 2B is the A terminal
  • the drain (D) is the B terminal
  • the gate (G) is the C terminal.
  • the transistor can be regarded as a transistor in which the A terminal is a source and the B terminal is a drain.
  • the voltage between the C terminal (gate) and the A terminal (source) is 0 V, which is equal to or lower than the threshold voltage, so that no current flows from the B terminal (drain) to the A terminal (source).
  • the transistor when the potential of the A terminal is higher than the potential of the B terminal, the transistor can be regarded as a transistor in which the B terminal is a source and the A terminal is a drain.
  • the A terminal (drain) to the B terminal Do not supply current to the (source).
  • the potential of the A terminal becomes equal to or higher than the threshold voltage with reference to the B terminal, a voltage higher than the threshold voltage is applied to the gate with reference to the B terminal (source), and current flows from the A terminal (drain) to the B terminal (source). be able to.
  • the drain functions as a diode and the source functions as an anode, and the forward rising voltage becomes the threshold voltage of the transistor. Therefore, the portion of the second transistor 16 shown in FIG. 2A can be regarded as a diode, and an equivalent circuit as shown in FIG. 2C is obtained.
  • the so-called bidirectional device is turned on, and the cathode side of the diode is connected to the drain side.
  • a switch that can be connected in series can be realized.
  • FIGS. 3A to 3C are first to third voltage / current correlation diagrams of the bidirectional switch of the present embodiment, and show the relationship between Vs2s1 and Is2s1 of the bidirectional switch 1.
  • FIG. 3A shows a case where Vg1 and Vg2 are changed simultaneously.
  • FIG. 3B shows a case where Vg2 is set to 0 V that is equal to or lower than the second threshold voltage, and Vg1 is changed.
  • FIG. 3C shows a case where Vg2 is changed by setting Vg1 to 0 V that is equal to or lower than the first threshold voltage.
  • the voltage between S2 and S1 (Vs2s1) on the horizontal axis is a voltage with reference to the first ohmic electrode 11A.
  • the current between S2 and S1 (Is2s1) on the vertical axis is positive for the current flowing from the second ohmic electrode 11B to the first ohmic electrode 11A.
  • Vg1 and Vg2 are 0 V and 1 V
  • Is2s1 does not flow regardless of whether Vs2s1 is positive or negative
  • the bidirectional switch 1 is cut off.
  • both Vg1 and Vg2 become higher than the threshold voltage, a conductive state in which Is2s1 flows bidirectionally according to Vs2s1 is established.
  • Vg2 when Vg2 is set to 0 V that is equal to or lower than the second threshold voltage and Vg1 is set to 0 V that is equal to or lower than the first threshold voltage, Is2s1 is blocked in both directions.
  • Vg1 is 2V to 5V, which is equal to or higher than the first threshold voltage
  • Is2s1 does not flow when Vs2s1 is less than 1.5V, but Is2s1 flows when Vs2s1 becomes 1.5V or more. That is, a reverse blocking state is reached in which current flows only from the second ohmic electrode 11B to the first ohmic electrode 11A, and no current flows from the first ohmic electrode 11A to the second ohmic electrode 11B.
  • the bidirectional switch 1 has a function of interrupting and energizing the bidirectional current according to the gate bias condition, and can also operate as a diode, and the direction in which the current of the diode is energized can be switched.
  • 4 shown in FIG. 4 according to the ON (denoted as ON) or OFF (denoted as OFF in the figure) conditions of the first gate terminal 2 and the second gate terminal 3 of the bidirectional switch 1. It can operate in one mode of operation. That is, when only the first gate terminal (G1) 2 is turned on, the first mode in which the bidirectional device that is turned on from the drain terminal 4 to the source terminal 5 and the semiconductor in which the reverse diode is connected in series is operated. can get.
  • the structure of the present embodiment is similar to a junction field effect transistor (JFET), but is completely different from a JFET that performs carrier modulation in a channel region by a gate electric field in that carrier injection is intentionally performed. Operates according to the operating principle. Specifically, it operates as a JFET up to a gate voltage of 3V. However, when a gate voltage of 3 V or more exceeding the built-in potential of the pn junction is applied, holes are injected into the gate, the current increases due to the mechanism described above, and a large current and low on-resistance operation is possible. Become.
  • the first gate electrode 13A is formed on the first p-type semiconductor layer 12A having p-type conductivity
  • the second gate electrode 13B is p-type. It is formed on the second p-type semiconductor layer 12B having the above conductivity.
  • the first gate electrode 13A and the second gate electrode are formed with respect to the channel region generated in the interface region between the first semiconductor layer (GaN layer 9) and the second semiconductor layer (AlGaN layer 10).
  • holes injected from the first gate electrode 13A and the second gate electrode 13B generate the same amount of electrons in the channel region, so that the effect of generating electrons in the channel region is increased, and the donor is increased. It functions like an ion. That is, since the carrier concentration can be modulated in the channel region, it is possible to realize a normally-off type nitride semiconductor layer bidirectional switch having a large operating current.
  • FIG. 5 is an explanatory diagram of the control unit 17 that performs gate driving of the bidirectional switch 1.
  • control part 17 is arrange
  • the internal configuration of the control unit 17 is created in correspondence with the four operation modes shown in FIG. 4 so as not to directly shift between the fourth mode in the bidirectional off state and the third mode in the bidirectional on state. It is configured to output with reference to the on / off table shown in FIG.
  • FIG. 7 is a configuration diagram of an inverter device using the bidirectional switch 1.
  • the power conversion device of the present embodiment includes a power source 23 as an input unit and an inverter device 18 as a power conversion unit.
  • the bidirectional circuit 1a to 1f constitutes the main circuit. That is, the bidirectional switches 1a, 1c, and 1e constitute the upper arm of the inverter circuit, and the bidirectional switches 1b, 1d, and 1f constitute the lower arm of the inverter circuit.
  • the bidirectional switches 1a to 1f output a drive signal referring to the on / off table from the control unit 17 to the first gate terminals 2a to 2f and the second gate terminals 3a to 3f, respectively. Transition between two modes. That is, when the upper arm bidirectional switches 1a, 1c, and 1e shift from the fourth mode to the third mode, the third mode is changed from the bidirectionally blocked state of the fourth mode of the on / off table of FIG.
  • shifting to the energized state in both directions, or the reverse operation that is, when moving from the energized state in both directions in the third mode to the disconnected state in both directions in the fourth mode
  • the second mode is interposed. In the second mode, a diode is formed in the forward direction with respect to the intended conduction direction, and the bidirectional switch 1 forms a conduction path having a diode that is turned on only in the forward direction. .
  • the bidirectional switches 1b, 1d, and 1f of the lower arm shift to the cut-off state
  • the first gate terminals 2b, 2d, and 2f, and the second gate terminals 3b and 3d of the bidirectional switches 1b, 1d, and 1f respectively.
  • the state in which current can be supplied in the intended direction is maintained until the moment when both terminals 3f are turned off.
  • control unit 17 shifts from the fourth mode in which current is interrupted in both directions to the third mode in which current is supplied in both directions, the control unit 17 changes from the state in which the table is in the fourth mode to the third mode.
  • a mode in which a reverse diode is formed with respect to the intended conduction direction (for example, if the intended current flow direction is the direction from the drain terminal 4 to the source terminal 5) Control is performed to shift to the third mode with the first mode) interposed.
  • the mode is similarly shifted from the third mode to the fourth mode via the first mode.
  • the mode of the bidirectional switch 1a of the first arm 18a is changed.
  • a mode change of the bidirectional switch 1b is performed, and a reflux current can be supplied from the negative side of the direct current portion.
  • the bidirectional switch 1a and the bidirectional switch 1b are controlled to perform mode transition with reference to the second mode so that the upper and lower arms are not short-circuited.
  • the bidirectional switch 1b operates with a diode interposed therebetween, and the bidirectional switch 1a does not generate an energizing operation with a diode interposed.
  • the bidirectional switch 1 of the present embodiment includes the first gate terminal 2, the second gate terminal 3, the drain terminal 4, and the source terminal 5.
  • the first gate terminal 2 When only the first gate terminal 2 is turned on, it operates as a semiconductor in which the on-state of the bidirectional device and the cathode side of the reverse diode are connected in series between the drain terminal 4 and the source terminal 5.
  • the second gate terminal 3 When only the second gate terminal 3 is turned on, it operates as a semiconductor in which the forward diode and the cathode side of the forward diode are connected in series between the drain terminal 4 and the source terminal 5.
  • the first gate terminal 2 and the second gate terminal 3 When the first gate terminal 2 and the second gate terminal 3 are turned on, they operate so as to conduct in a bidirectional manner between the drain terminal 4 and the source terminal 5 without using a diode.
  • the operation is performed to cut off the current in both forward and reverse directions.
  • a current is passed in the intended direction so as not to make a direct transition from the bidirectional OFF state to the bidirectional ON state or the reverse transition. It is possible to turn on only one of the forward and reverse directions.
  • a bidirectional switch having four operation modes has a variation in on-off time between chips due to a signal circuit or feedback capacitance to the bidirectional switch, and mutual mutual driving for driving the first gate terminal 2 and the second gate terminal 3. There is a variation in response of the gate drive circuit. Due to such variations, an unintended current flow mode (for example, the second mode (in which the intended current flow direction is the source) is set when the mode is shifted from the third mode to the fourth mode or from the fourth mode to the third mode. In the case of the terminal 5 to the drain terminal 4, there are cases where either the first mode) or the third mode) is passed.
  • the bidirectional switch 1 of the present embodiment has the above-described characteristics, it is possible to avoid going through an unintended current flow mode.
  • the intended other mode for example, when the intended current flow direction is from the source terminal 5 to the drain terminal 4, the second mode is changed to the “intended other mode”. It is possible to control the gate drive of the bidirectional switch 1 so as to go through.
  • the bidirectional switch 1 b passes through the first mode in which a forward diode is formed with respect to the intended conduction direction at the time of the state transition from the fourth mode to the third mode. Is controlling. Therefore, when transitioning from the bi-directional off state to the bi-directional on state, it is possible to control so that the current between the drain terminal 4 and the source terminal 5 becomes the intended flow direction. That is, even when an inductive load such as a motor is connected to the output side as in the present embodiment, power conversion can be performed with a simple circuit configuration without requiring a clamp circuit or the like. Note that the number and arrangement of the bidirectional switches 1 may be changed according to the modulation method of the inverter device 18.
  • the on / off table is a logic circuit 20 as a delay generation unit as shown in FIG. 8 for any one of the output terminals of the control unit 17 (for example, to realize a signal propagation time of 1 ns or more). This can also be realized by adding a logic IC having a signal propagation time of 10 ns.
  • the logic circuit 20 can generate a delay time by controlling switching of the first gate terminal 2 and the second gate terminal 3 from OFF to ON, or from ON to OFF at different timings. Further, the delay time can be generated using the response speed of the logic circuit.
  • the delay time generated by the delay generator is 1 ns or greater than 1 ns.
  • both of the four operation modes are provided due to variations in the on / off time between chips due to semiconductor input / output or feedback capacitance, and variations in the responsiveness of the gate drive circuits that drive the first gate terminal and the second gate terminal. It is possible to prevent the operation mode transition of the direction switch from going through an unintended operation mode.
  • the delay generation unit such as the logic circuit 20 does not directly shift from the fourth mode to the third mode or from the third mode to the fourth mode, but is driven by a signal delayed by the delay time of the logic circuit 20. It is good also as composition to do.
  • the drive signal for the first gate terminal 2 and the drive signal for the second gate terminal 3 are shared, and the first gate terminal 2 and the second gate terminal 3 are controlled to be turned on and off with the only gate drive signal via the control unit 17. It is good also as a structure like FIG. In FIG. 8, the drive signal directly supplied from the control unit 17 to one gate drive circuit 19C is supplied via the logic circuit 20 to the other gate drive circuit 19D. The logic circuit 20 forcibly and temporarily fixes the mode.
  • the timing for driving the first gate terminal 2 and the second gate terminal 3 is simply shifted. Directly, the transition between the third mode and the fourth mode can be prevented.
  • FIGS. 9A and 9B are first and second mode transition diagrams of the bidirectional switch according to the present embodiment.
  • Embodiment 1 attaches
  • control unit 17 shifts from the fourth mode in which the bidirectional switch 1a is bi-directionally interrupted to the third mode in which current is bi-directionally passed.
  • control is performed so as to shift to the third mode by interposing a mode in which a reverse diode is formed (in the direction in which current is passed from the drain terminal 4 to the source terminal 5).
  • the on / off table at this time is shifted from the fourth mode shown in FIG. 6 to the third mode via the first mode, and is opposite to the intended conduction direction. This corresponds to controlling to shift to the third mode with a mode in which a diode is formed in the direction.
  • the mode shift of the bidirectional switch 1b of the first arm 18a is performed.
  • a reflux current can be supplied from the negative side of the DC part.
  • the second gate terminal 3b is kept off at the time T1, and both the bidirectional switch 1b at the time T2.
  • control is performed to shift the mode to the on state at time T3.
  • the bidirectional switch 1b operates with a diode, and the bidirectional switch 1a does not generate an energizing operation with a diode.
  • the bidirectional switch 1a when the intended flow direction is from the drain terminal 4 to the source terminal 5, the bidirectional switch 1a is switched from the fourth mode to the third mode via the first mode. And migrate. Thereafter, the mode is shifted to the fourth mode via the first mode.
  • the bidirectional switch 1b shifts from the third mode to the fourth mode via the first mode. Thereafter, the mode is shifted to the third mode via the first mode.
  • control unit 17 shifts from the fourth mode in which current is cut off in both directions to the third mode in which current is supplied in both directions, or from the third mode in which current is supplied in both directions.
  • shifting to the fourth mode in which the current is interrupted control is performed so as to shift to the third mode by interposing a mode in which a reverse diode is formed with respect to the intended conduction direction.
  • FIG. 10 is a mode transition diagram of the bidirectional switch in the present embodiment.
  • Embodiment 1 attaches
  • the control unit 17 sets the bidirectional switch 1 a in the intended conduction direction when the state transition from the third mode to the fourth mode occurs.
  • control is performed so as to pass through the first mode in which a reverse diode is formed. This reduces the loss due to the forward current of the forward diode.
  • the first gate terminal passes through the first mode in which the forward diode is formed with respect to the intended conduction direction (the direction of the return current) during the state transition from the fourth mode to the third mode. 2a and the second gate terminal 3a are controlled.
  • the bidirectional switch 1a and the bidirectional switch 1b transition from the state in which the bidirectional switch 1b is conducted by the combination (1) to the state in which the bidirectional switch 1a is conducted by the combination (2). Is controlled to flow to the bidirectional switch 1a.
  • a forward diode is formed with respect to the intended conduction direction (the direction of the return current), so that conduction is possible.
  • the solid line arrow portion in FIG. 10 indicates the current direction at the time of steady state
  • the dotted line arrow indicates the current direction at the time of transition
  • the cross symbol attached to the arrow means that the diode does not conduct. .
  • the bidirectional switch 1b performs control so as to secure a current route at the timing when the bidirectional switch 1a enters the current cutoff state with respect to the intended current direction. That is, the bidirectional switch 1a is controlled so as to cause the return current to flow through the bidirectional switch 1b via the first mode at the time of the state transition from the third mode to the fourth mode. For example, in FIG. 10, when switching from the combination (3) to the combination (1) via the combination (4), the first gate terminal 2b is turned on in the combination (4) so that both the return currents are supplied. It is made to flow to the direction switch 1b. Similarly, the bidirectional switch 1b is controlled so as to secure a current route for the state transition of the bidirectional switch 1b.
  • the bidirectional switch 1b makes a state transition from the third mode to the fourth mode, control is performed so that a reflux current flows through the bidirectional switch 1b via the second mode.
  • the transition is made from the combination (1) to the combination (3) via the combination (2), and in the combination (2), the first gate terminal 2a is turned on so that the return current is bidirectional. It is made to flow through the switch 1a.
  • the bidirectional switch 1b and the bidirectional switch 1a are combined (2) and (4) when the bidirectional switches 1a and 1b transition from the conduction state (third mode) to the cutoff state (fourth mode). ), The current flows through the diode one by one. Since the bidirectional switch 1a and the bidirectional switch 1b go through the timing of passing the diode once as shown by the arrows in the figure, the losses are averaged with each other.
  • the bidirectional switch 1a when the intended flow direction is from the drain terminal 4 to the source terminal 5, the bidirectional switch 1a is switched from the fourth mode to the first mode through the first mode and the third mode. Transition to mode. Thereafter, the mode shifts to the fourth mode again.
  • the bidirectional switch 1b shifts from the third mode to the first mode via the first mode and the fourth mode. After that, the mode again shifts to the third mode.
  • the present embodiment it is possible to equalize the time ratio for forming the current route with respect to the bidirectional switches 1a and 1b via the diodes. That is, the loss of the bidirectional switches 1a and 1b when the bridge circuit is formed can be averaged. Therefore, it is not necessary to perform a heat radiation design that matches the lossy bidirectional switch 1a or 1b, and a small and lightweight power conversion device can be configured.
  • FIG. 11 is a mode transition diagram of the bidirectional switch in the present embodiment. Components having the same functions as those in the first to third embodiments are denoted by the same reference numerals and detailed description thereof is omitted.
  • the control unit 17 forms a forward diode with respect to the intended conduction direction when the bidirectional switch 1a in the inverter device 18 undergoes a state transition from the third mode to the fourth mode. Control is performed so as to pass through the second mode (when the intended flow direction is from the drain terminal 4 to the source terminal 5). That is, control is performed by transitioning from the combination (7) to the combination (5) via the combination (8). Further, in the state transition from the fourth mode to the third mode, the first mode in which a reverse diode is formed with respect to the intended conduction direction (when the intended flow direction is from the drain to the source) is passed. So that it is controlled.
  • control is performed by making a transition from the combination (5) to the combination (7) via the combination (6). This reduces the loss due to the forward current of the forward diode and averages the losses of the bidirectional switches 1a and 1b when the bridge circuit is formed.
  • the first gate terminals 2a and 2b and the second gate terminals 3a and 3b are sequentially turned on and off as in combination (5) to combination (8).
  • the bidirectional switch 1a of the combination (6) the current direction indicated by the broken line does not flow.
  • the bidirectional switch 1b does not flow but flows through the bidirectional switch 1a.
  • the direction in which a cross mark is given to the broken line portion means that the path of the other bidirectional switch 1a or bidirectional switch 1b is given priority. Therefore, the bidirectional switch 1a and the bidirectional switch 1b generate a path that passes through the forward diode with respect to each other mainly once.
  • control is performed so that the number of times is the same for the bidirectional on state and the bidirectional off state.
  • the bidirectional switch 1a when the intended flow direction is from the drain terminal 5 to the source terminal 4, the bidirectional switch 1a is switched from the fourth mode to the second mode via the first mode and the third mode. Enter mode.
  • the bidirectional switch 1b shifts from the third mode to the first mode via the second mode and the fourth mode.
  • the time ratio for forming the current route through the diodes can be made uniform for the bidirectional switches 1a and 1b. That is, the loss of the bidirectional switches 1a and 1b when the bridge circuit is formed can be averaged. Therefore, it is not necessary to perform a heat radiation design that matches the lossy bidirectional switch 1a or 1b, and a small and lightweight power conversion device can be configured.
  • the bidirectional switch to which the present invention is applied includes the semiconductor layer stack having a channel formed on the substrate and the first switch formed on the semiconductor layer stack at a distance from each other.
  • One ohmic electrode and a second ohmic electrode Furthermore, it has the 1st gate electrode and the 2nd gate electrode which were formed in order from the 1st ohmic electrode side between the 1st ohmic electrode and the 2nd ohmic electrode.
  • a first p-type semiconductor layer formed between the semiconductor layer stack and the first gate electrode, and a second p-type formed between the semiconductor layer stack and the second gate electrode.
  • a gate drive signal is input between the first gate terminal that inputs a gate drive signal between the first ohmic electrode and the first gate electrode, and between the second ohmic electrode and the second gate electrode. And a second gate terminal. Furthermore, a drain terminal connected to the first ohmic electrode and a source terminal connected to the second ohmic electrode are provided. Further, when only the first gate terminal is turned on, the first mode operates as a semiconductor in which a bidirectional device and a reverse diode connected in series are connected in series from the drain terminal to the source terminal. Further, when only the second gate terminal is turned on, a forward diode and an on-state bidirectional device operate as a semiconductor connected in series from the drain terminal to the source terminal.
  • the semiconductor device when the first gate terminal and the second gate terminal are turned on, the semiconductor device has a third mode in which it operates as a semiconductor that conducts bidirectionally between the drain terminal and the source terminal. Further, when the first gate terminal and the second gate terminal are turned off, there is a fourth mode which operates as a semiconductor that cuts off current in both forward and reverse directions.
  • the present invention provides a gate drive method for such a bidirectional switch, wherein the first mode or the second mode is used when shifting from the fourth mode to the third mode, or from the third mode to the fourth mode. It controls to interpose at least one of these.
  • a bidirectional switch having such four operation modes has a variation in on / off time between chips due to a signal circuit or a feedback capacitor to the bidirectional switch, and a mutual operation for driving the first gate terminal and the second gate terminal. Variation in response of the gate drive circuit occurs. Due to these variations, an unintended current flow mode (for example, either the second mode or the third mode) is passed when the mode is shifted from the third mode to the fourth mode or from the fourth mode to the third mode. That happens.
  • an unintended current flow mode for example, either the second mode or the third mode
  • the present invention passes through the first mode or the second mode in which the forward diode is formed so as to conduct in the intended conduction direction in the state transition from the fourth mode to the third mode. To control.
  • This method makes it possible to control the current between the drain terminal and the source terminal to have the intended flow direction when transitioning from the bidirectional off state to the bidirectional on state. Therefore, even when an inductive load is connected to the output side, a power conversion can be performed with a simple circuit configuration without requiring a clamp circuit or the like.
  • the present invention passes through the first mode or the second mode in which the forward diode is formed to conduct in the intended conduction direction at the time of the state transition from the third mode to the fourth mode. To control.
  • This method makes it possible to control the current between the drain terminal and the source terminal to be in the intended flow direction when transitioning from the bidirectional on state to the bidirectional off state. Therefore, even when an inductive load is connected to the output side, power conversion can be performed with a simple circuit configuration without interrupting the current.
  • the present invention passes through the first mode or the second mode in which the reverse diode is formed so as to cut off the intended conduction direction at the time of the state transition from the fourth mode to the third mode. To control.
  • This method can reduce the loss due to the forward current of the forward diode. Therefore, when switching from a bi-directional off state to a bi-directional on state, the entire circuit is configured to be low loss without interposing a mode through which a diode that exists equivalently in the first or second mode flows. can do. Therefore, power conversion can be performed with a smaller circuit configuration.
  • the reverse diode when the state transition from the third mode to the fourth mode is performed, the reverse diode is formed so as to be cut off with respect to the intended conduction direction. To control.
  • This method can reduce the loss due to the forward current of the forward diode. Therefore, when switching from the bi-directional on state to the bi-directional off state, the entire circuit is configured to have a low loss without interposing a mode for passing a diode that exists equivalently in the first or second mode. can do. Therefore, power conversion can be performed with a smaller circuit configuration.
  • the drive signal for the first gate terminal and the drive signal for the second gate terminal are shared, and the first gate terminal and the second gate terminal are controlled to be turned on / off by one gate drive signal.
  • the present invention includes a bridge circuit using a bidirectional switch, and a reverse diode is formed so as to cut off the intended conduction direction at the time of state transition from the third mode to the fourth mode.
  • a forward diode is formed so as to be controlled to pass through the first mode or the second mode, and to conduct in the intended conduction direction during the state transition from the fourth mode to the third mode. Control is performed so as to pass through the mode or the second mode.
  • This method can reduce the loss due to the forward current of the forward diode, and can average the loss of the bidirectional switch. That is, when the bidirectional switches are connected in series or in parallel, the amount of generated heat is equalized. Therefore, there is no need to select a heat radiating plate based on a bidirectional switch that generates a large amount of heat, and a small and lightweight power conversion device can be configured.
  • the present invention also includes a bridge circuit using a bidirectional switch, and a forward diode is formed so as to conduct in the intended conduction direction at the time of transition from the third mode to the fourth mode.
  • a reverse diode is formed so as to be controlled so as to pass through the first mode or the second mode, and cut off with respect to the intended conduction direction at the time of the state transition from the fourth mode to the third mode. Control is performed so as to pass through the mode or the second mode.
  • This method can reduce the loss due to the forward current of the forward diode and average the loss of the bidirectional switch. That is, when the bidirectional switches are connected in series or in parallel, the amount of generated heat is equalized. Therefore, there is no need to select a heat radiating plate based on a bidirectional switch that generates a large amount of heat, and a small and lightweight power conversion device can be configured.
  • the present invention includes a delay generation unit, and switches the first gate terminal and the second gate terminal from off to on or from on to off at different timings.
  • the bidirectional switch can be prevented from directly shifting from the third mode to the fourth mode or from the fourth mode to the third mode with a simpler configuration.
  • the delay time generated by the delay generation unit is 1 ns or longer than 1 ns.
  • this method there are four operation modes due to variations in on / off time between chips due to semiconductor input / output or feedback capacitance, and variations in responsiveness of mutual gate drive circuits for driving the first gate terminal and the second gate terminal. It is possible to prevent the operation mode transition of the bidirectional switch from passing through an unintended operation mode.
  • the delay generation unit generates a delay time using the response speed of the logic circuit. By this method, the generation of the delay time can be realized with a simple and inexpensive circuit.
  • a bidirectional switch to which the present invention is applied includes a semiconductor layer stack having a channel formed on a substrate, a first ohmic electrode formed on the semiconductor layer stack at a distance from each other, and And a second ohmic electrode. Furthermore, it has the 1st gate electrode and the 2nd gate electrode which were formed in order from the 1st ohmic electrode side between the 1st ohmic electrode and the 2nd ohmic electrode. Further, a first p-type semiconductor layer formed between the semiconductor layer stack and the first gate electrode, and a second p-type formed between the semiconductor layer stack and the second gate electrode. A semiconductor.
  • a gate drive signal is input between the first gate terminal that inputs a gate drive signal between the first ohmic electrode and the first gate electrode, and between the second ohmic electrode and the second gate electrode. And a second gate terminal. Furthermore, a drain terminal connected to the first ohmic electrode and a source terminal connected to the second ohmic electrode are provided. Further, when only the first gate terminal is turned on, the first mode operates as a semiconductor in which a bidirectional device and a reverse diode connected in series are connected in series from the drain terminal to the source terminal. Further, when only the second gate terminal is turned on, a forward diode and an on-state bidirectional device operate as a semiconductor connected in series from the drain terminal to the source terminal.
  • the semiconductor device when the first gate terminal and the second gate terminal are turned on, the semiconductor device has a third mode in which it operates as a semiconductor that conducts bidirectionally between the drain terminal and the source terminal. Further, when the first gate terminal and the second gate terminal are turned off, there is a fourth mode which operates as a semiconductor that cuts off current in both forward and reverse directions.
  • the present invention is a gate drive method for such a bidirectional switch, and controls so as not to directly shift from at least one of the fourth mode to the third mode or from the third mode to the fourth mode.
  • This method makes it possible to avoid unintended current flow mode when shifting from the third mode to the fourth mode or from the fourth mode to the third mode. Therefore, even if there is a delay in signal conveyance, control can be performed so as to pass through one of the intended other modes.
  • the present invention constitutes a power conversion device (for example, an inverter device) using a bidirectional switch gate drive method.
  • the bidirectional switch can be applied to the power conversion device with a simpler configuration, and a low-loss and inexpensive device can be configured.
  • the present invention does not directly shift from the fourth mode to the third mode, or from the third mode to the fourth mode, and is low loss and low cost, it is applied to a DC-DC converter device, an AC-DC converter device, an inverter device, etc. it can.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

L'invention concerne une technique d'attaque de grille à faibles pertes qui commande un interrupteur bidirectionnel, lequel est muni d'une première borne de grille, d'une seconde borne de grille, d'une borne de drain et d'une borne de source, et qui présente quatre modes opératoires dans lesquels la première borne de grille et la seconde borne de grille sont de manières diverses passantes et/ou bloquées, de telle sorte que l'interrupteur ne commute pas directement lorsqu'il bascule d'un état fermé bidirectionnel à un état ouvert bidirectionnel, grâce à quoi on peut empêcher l'apparition d'incidences d'une surintensité et d'une surtension dans les divers composants lors de périodes de transition non désirées.
PCT/JP2009/002722 2008-06-18 2009-06-16 Technique d'attaque de grille pour des interrupteurs bidirectionnels et convertisseur de puissance qui utilise ceux-ci Ceased WO2009153965A1 (fr)

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JP2008158679A JP2011172298A (ja) 2008-06-18 2008-06-18 双方向スイッチのゲート駆動方法およびそれを用いた電力変換装置

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EP2707959A4 (fr) * 2011-05-10 2014-10-22 Enphase Energy Inc Commutateur bidirectionnel à quatre quadrants
IT201800002257A1 (it) * 2018-01-31 2019-07-31 St Microelectronics Srl Circuito di commutazione, dispositivo e procedimento corrispondenti
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GB2601533A (en) * 2020-12-03 2022-06-08 Dyson Technology Ltd Drive circuit for a brushless motor
GB2601530A (en) * 2020-12-03 2022-06-08 Dyson Technology Ltd Drive circuit for a brushless motor
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EP2707959A4 (fr) * 2011-05-10 2014-10-22 Enphase Energy Inc Commutateur bidirectionnel à quatre quadrants
US9130570B2 (en) 2011-05-10 2015-09-08 Enphase Energy, Inc. Four quadrant bidirectional switch
WO2012176449A1 (fr) * 2011-06-23 2012-12-27 パナソニック株式会社 Circuit équivalent de commutateur bidirectionnel, procédé de simulation de commutateur bidirectionnel et dispositif de simulation de commutateur bidirectionnel
JP5261621B1 (ja) * 2011-06-23 2013-08-14 パナソニック株式会社 双方向スイッチのシミュレーション方法、双方向スイッチのシミュレーション装置、及びプログラム
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IT201800002257A1 (it) * 2018-01-31 2019-07-31 St Microelectronics Srl Circuito di commutazione, dispositivo e procedimento corrispondenti
EP3522374A1 (fr) * 2018-01-31 2019-08-07 STMicroelectronics Srl Circuit d'attaque, dispositif et procédé correspondants
US10523197B2 (en) 2018-01-31 2019-12-31 Stmicroelectronics S.R.L. Switch circuit, corresponding device and method
US10749474B2 (en) 2018-01-31 2020-08-18 Stmicroelectronics S.R.L. Switching circuit, corresponding device and method
GB2601535A (en) * 2020-12-03 2022-06-08 Dyson Technology Ltd Drive circuit for a brushless motor
WO2022117987A1 (fr) * 2020-12-03 2022-06-09 Dyson Technology Limited Circuit d'entraînement pour moteur sans balais
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GB2601533A (en) * 2020-12-03 2022-06-08 Dyson Technology Ltd Drive circuit for a brushless motor
WO2022117990A1 (fr) * 2020-12-03 2022-06-09 Dyson Technology Limited Circuit d'attaque pour moteur sans balai
WO2022117992A1 (fr) * 2020-12-03 2022-06-09 Dyson Technology Limited Circuit d'attaque pour moteur sans balais
WO2022117991A1 (fr) * 2020-12-03 2022-06-09 Dyson Technology Limited Circuit d'entraînement pour moteur sans balais
GB2601530A (en) * 2020-12-03 2022-06-08 Dyson Technology Ltd Drive circuit for a brushless motor
WO2022117986A1 (fr) * 2020-12-03 2022-06-09 Dyson Technology Limited Circuit d'attaque pour moteur sans balais
WO2022117988A1 (fr) * 2020-12-03 2022-06-09 Dyson Technology Limited Circuit d'entraînement pour moteur sans balais
GB2601528B (en) * 2020-12-03 2023-09-06 Dyson Technology Ltd Drive circuit for a brushless motor
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GB2601530B (en) * 2020-12-03 2024-07-17 Dyson Technology Ltd Drive circuit for a brushless motor
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