WO2011067566A1 - Improvements in and relating to optical sensors and optical sensing - Google Patents
Improvements in and relating to optical sensors and optical sensing Download PDFInfo
- Publication number
- WO2011067566A1 WO2011067566A1 PCT/GB2010/002216 GB2010002216W WO2011067566A1 WO 2011067566 A1 WO2011067566 A1 WO 2011067566A1 GB 2010002216 W GB2010002216 W GB 2010002216W WO 2011067566 A1 WO2011067566 A1 WO 2011067566A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photosensitive element
- switch
- capacitance
- signals
- separate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J1/46—Electric circuits using a capacitor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
Definitions
- the present invention relates to improvements in and relating to optical sensors and optical sensing.
- optical sensing is required. Examples include cameras, which are typically required to provide high-quality output even at low incident light levels. Other examples include scientific measurement applications. In some measurement applications, optical sensors are required to provide high-quality measurement of relatively small variations in a relatively high intensity illumination. That is, the sensors are required to isolate a small signal within a large background.
- the examples to be described are considered to be particularly, but not exclusively, applicable to this latter type of measurement application.
- Examples of the present invention provide apparatus comprising: a photosensitive element, and a capacitance associated with the photosensitive element, wherein the photosensitive element provides a discharge path for the capacitance while the photosensitive element is illuminated, and the photosensitive element has a conductivity which depends on the illumination intensity, and wherein the value of the capacitance is variable, the apparatus further comprising control means operable to select the value of the capacitance.
- the apparatus may further comprise at least one capacitor which is a component separate from the photosensitive element. There may be a plurality of capacitors which are each components separate from the photosensitive element.
- the apparatus may comprise switch means operable to connect and disconnect the photosensitive element with the or each separate capacitor.
- the switch means may be operable to connect at least one of the separate capacitors in parallel with the photosensitive element.
- the switch means may comprise a plurality of switch elements, each separate capacitor having an associated switch element. Each switch element may be separately controllable. Each switch element may be controlled by a switch voltage.
- the switch means may further comprise a register operable to store information relating to the required state of each switch.
- the switch means may comprise a data input for receiving state information, and be operable to load state information into the register.
- the photosensitive element may be a photodiode. At least the photosensitive element and the capacitance may be implemented in CMOS technology.
- the apparatus may comprise a plurality of capacitances, as aforesaid, associated with a common photosensitive element.
- processing means operable to combine signals representing the degree of discharge of the respective capacitances.
- the signals may be combined to form difference signals.
- the difference signals may be digitised.
- the signals may be generated and combined within an integrated circuit, wherein the output of the integrated circuit is provided as the difference signals.
- examples of the invention provide a sensor comprising a plurality of. pixels, each pixel comprising apparatus as defined above.
- Examples of the present invention also provide a method comprising: providing a photosensitive element; providing a capacitance associated with the photosensitive element, the photosensitive element providing a discharge path for the capacitance while the photosensitive element is illuminated, and the photosensitive element having a conductivity which depends on the illumination intensity, and controlling the value of the capacitance.
- At least one capacitor which is a component may be provided separate from the photosensitive element. There may be a plurality of capacitors which are provided as components separate from the photosensitive element. Switch means may be provided, operable to connect and disconnect the photosensitive element with the or each separate capacitor. The switch means may be operated to connect at least one of the separate capacitors in parallel with the photosensitive element.
- Each separate capacitor may be provided with an associated switch element.
- Each switch element may be separately controlled.
- Each switch element may be controlled by a switch voltage.
- Information relating to the required state of each switch may be stored in a register.
- the photosensitive element may be a photodiode. At least the photosensitive element and the capacitance may be implemented in CMOS technology.
- a plurality of capacitances, as aforesaid, and associated with a common photosensitive element may be provided. Signals representing the degree of discharge of the respective capacitances may be combined. The signals may be combined to form difference signals. The difference signals may be digitised. The signals may be generated and combined within an integrated circuit, wherein the output of the integrated circuit is provided as the difference signals.
- the present invention provides apparatus comprising: a photosensitive element, and a plurality of capacitances associated with the photosensitive element, wherein the photosensitive element provides a discharge path for the capacitances while the photosensitive element is illuminated, and the photosensitive element has a conductivity which depends on the illumination intensity, and wherein the apparatus further comprises processing means operable to combine signals representing the degree of discharge of the respective capacitances.
- the signals may be combined to form difference signals.
- the difference signals may be digitised.
- the signals may be generated and combined within an integrated circuit, wherein the output of the integrated circuit is provided as the difference signals.
- Fig. 1 is a schematic circuit diagram of an example embodiment of the invention
- Fig. 2 illustrates the capacitance of Fig. 1 in more detail
- Fig. 3 illustrates the control arrangement for one capacitor of Fig. 2;
- Fig. 4 illustrates an array of pixels formed from circuits as shown in Fig. 1 ;
- Fig. 5 illustrates an illumination profile which may be encountered in a measurement application;
- Fig. 6 illustrates a temporal modulation in the profile of Fig. 5;
- Fig. 7 schematically illustrates a system constructed from circuits of Fig. 1
- Fig. 1 illustrates apparatus 10 which is an example embodiment of the present invention.
- the apparatus 10 includes a photosensitive element 12 which, in this example, is a photodiode.
- a capacitance indicated at 14 is associated with the photodiode 12.
- the photodiode 12 is connected across the power supply 16, 1 8, from which it can be isolated by a switch 19.
- the positive side of the capacitance 14 is connected to the positive terminal of the photodiode 12, through a switch 22, here called the shutter switch. Accordingly, the capacitance 14 can be charged to supply voltage when the switching components 19, 22 are closed, or isolated from the positive rail 16 of the power supply.
- the switch 22 also allows the capacitance 14 and the photodiode 12 to be connected or isolated from each other.
- the photodiode 12 is exposed to illumination 24.
- the conductivity of the photodiode 12 depends on the intensity of the illumination 24. While the photodiode 12 is illuminated, it therefore provides a discharge path for the capacitance 14, when the shutter switch 22 is closed and the switching component 19 is open.
- a measurement of the intensity of the illumination 24 can be taken in the following manner.
- the apparatus 10 is prepared by closing the shutter switch 22 and closing the switching component 19 in order to charge up the capacitance 14 to the supply voltage at 16.
- the switching component 19 is then opened to isolate the capacitance 14 and photodiode 12 from the supply voltage at 16.
- the photodiode 12 is then exposed to the illumination 24.
- the capacitance 14 begins to discharge through the photodiode 12, at a rate which depends on the conductivity of the photodiode 12, and thus depends on the intensity of the illumination 24.
- the shutter switch 22 is opened to prevent further discharge of the capacitance 14.
- the voltage at the positive terminal of the capacitance 14 is provided as an output at 26, through an amplifier 28.
- the output voltage at 26 represents the intensity of the illumination 24. The higher the intensity of the illumination 24, the more the capacitance 14 will have discharged in a given time, and the lower will be the output voltage at 26.
- the capacitance 14 has a value which is variable. Furthermore, a control arrangement 30 is provided, operable to select the value of the capacitance 14. The manner in which this is achieved, and the significance of it can now be described, turning first to the structure of the variable capacitance 14.
- Fig. 2 illustrates the capacitance 14 in more detail.
- the capacitance 14 includes a line of individually identifiable capacitors 32.
- Each capacitor 32 is a component separate from the photosensitive element 12.
- the internal capacitance of a photodiode can also be used to provide additional capacitance.
- Each of the capacitors 32 is connected in parallel with each other and across the photodiode 12, from the positive terminal of the photodiode 12, to the negative supply rail 18.
- a switch 34 is associated with each capacitor 32 and in series with the capacitor 32 and the shutter switch 22, between the capacitor 32 and the positive terminal of the photodiode 12. When the shutter switch 22 is closed, each switch 34 serves to connect and disconnect the photodiode 12 with the corresponding capacitor 32, according to the state of the switch 34.
- Each switch 34 is separately controllable, as indicated at 36.
- the control at 36 is provided by a switch voltage from a register 38.
- the register 38 stores information relating to the required state of each switch 34.
- the register 38 may contain a cell 42 corresponding with each switch 34, containing a binary vaiue for the corresponding switch 34, representing the required state (ON/OFF).
- the switch control voltages 36 are then generated in accordance with the binary values in the register 38, to open or close the switches 34, as required.
- the register 38 has a data input 40 for receiving state information.
- the state information is a binary string containing a bit representing the required state of each switch 34.
- State information received at the data input 40 is stored in the register 38.
- Fig. 3 shows one of the capacitors 32 in more detail, together with the associated control circuit, again in more detail.
- Fig. 3 shows one cell 42 of the register 38, in the form of a latching gate having a Value input 44, a Load input 46 and an output 48.
- the cell 42 is loaded by a change of voltage at the Load input 46 which results in the contemporaneous value at the Value input 44 being latched into the cell 42, thereafter appearing at the output 48 until a new value is loaded at a subsequent time.
- the value at the output 48 is applied at 50 to control the state of the switch 34.
- the device 34 is set ON or OFF according to the binary value held by the cell 42.
- the binary value held by the cell 42 causes the capacitor 32 to be connected or disconnected across the photodiode 12.
- the choice and number of capacitors 32 which are switched into circuit with the photodiode 12 can be controlled by loading an appropriate binary string into the cells 42 of the register 38. Those capacitors 32 which are switched into circuit will all be in parallel with each other, so that the value of the capacitance 14, as seen by the photodiode 12, will be equal to the sum of the capacitances of those capacitors 32 which are switched into circuit.
- the capacitors 32 may each have the same capacitance value, or other arrangements could be used.
- the apparatus 10, as just described, can be used as one pixel in an array of pixels forming a sensor 54, as illustrated in Fig. 4.
- a group of pixels, each formed as described above, forms a sensor 54 which is a linear array.
- a square or rectangular array could be formed.
- Each pixel 10 in the sensor 54 is individually addressable by a data input 58, used to load the register of the pixel, as described above.
- Figure 5 illustrates a profile which may be encountered in an optical measurement application.
- the vertical axis represents the intensity of illumination 24 received at the photodiode 12.
- the horizontal axis represents another variable, which maybe position, angle or another parameter.
- the illumination intensity 24 varies with the other parameter.
- the profile of illumination intensity may be Gaussian or another shape, and may have more than one peak.
- Many measurement applications exist in which the output is expected to follow the general shape of a known profile (such as a Gaussian), with useful information contained within small variations from the expected profile. Examples of such measurement applications include picosecond laser ultrasonics, ultrafast spectroscopy and other applications employing pump/probe methods.
- Useful information can be recovered from the Gaussian (or other) expected output by applying a temporal modulation to the input of the measurement application and observing the effect at the output, which is the illuminating intensity 24 observed at the photodiode 12.
- the temporal variation is illustrated in Fig. 6. This represents the illumination intensity 24, over time, at a single value of the horizontal axis of Fig. 5, as the input to the experiment is modulated. It can be shown that by measuring the intensity at the four times indicated in Fig. 6 as , l 2 , ⁇ 3» and U, the amplitude of the temporal modulation signal 80 can be recovered as:
- V q/C where V is the output voltage
- q is the value of charge drained from the capacitance 4, during exposure (and which is proportional to the number of photons received by the photodiode 12).
- the value 1/C is known as the "conversion gain" for the system, and reduces as the value of the capacitance 14 increases. If the value C is chosen to be optimum for the peak of the profile shown in Fig. 5, and is thereafter kept constant, then the voltage output will reduce away from the peak. The voltage difference produced by the same change of illuminating intensity will also decrease, which results in a lower contrast in the output voltage, which will tend to increase problems of signal-to-noise ratio in subsequent processing stages. For example, with a lower contrast output signal, problems of read-out noise in later processing stages will become more significant. Accordingly, the modulation information contained in the profile may be more difficult to recover, away from the peak of the profile.
- the apparatus 10 allows the value of the capacitance 14 to be changed.
- some of the capacitors 32 can be switched out of circuit to reduce the value of the capacitance 14 and hence to increase the conversion gain of the apparatus 10.
- This boosts the voltage at the output 26.
- the contrast achieved in the output signal is also improved. That is, the voltage difference produced by the same change of illuminating intensity is increased over that which is achieved without the reduction in the capacitance value. This will enable a more beneficial response to be achieved, particularly in relation to signal-to-noise considerations. In particular, increasing the contrast will reduce read-out noise problems in later processing.
- the apparatus of the invention allows the conversion gain of the pixel- to be controlled by controlling the value of the capacitance, so that the conversion gain is set in accordance with the expected illuminating intensity, in order to boost the gain when the intensity is expected to be low, and to reduce the gain, when the intensity is expected to be high.
- the apparatus 10 provides a "well” in which photons are captured in the form of charge. Best measurement results are achieved when a measurement wholly or nearly fills the "well". Consequently, the size of the well (which is the value of the capacitance 14) is controlled so that for each measurement, the size of the well will result in the well being wholly or nearly filled. Adjusting the size of the well also allows the contrast in the output signal to be optimised. This is because the maximum output voltage which can occur is fixed by the voltage difference between the supply voltages 16, 18, so that the optimum contrast is achieved by setting the capacitance value so that the expected illumination intensity will create an output voltage at or near the maximum. Variations in illumination intensity will then create the largest possible change in output voltage, thus optimising the contrast.
- Fig. 7 illustrates a system 70 constructed from multiple examples of apparatus 10 and which may be used for measurements of a signal of the type illustrated in Fig. 6.
- the system 70 represents one multi-channel pixel, which may form one pixel of an array.
- the system 70 includes four separate apparatus 0, each of the type described above, except that the same photodiode is connected into each of the apparatus 10. This allows four measurements to be taken at different times, corresponding with l 2 , I3 and l 4 , and ensures that the outputs of each channel have identical spatial alignment, arising from the same sensing device.
- Each apparatus 10 produces a respective output 26.
- the outputs 26 are used as inputs to differential amplifiers 72 whose outputs 74 are accordingly difference signals.
- the two difference signals 74 are digitised by analogue to digital converters 76 to form digital outputs 78.
- the whole of the system 70, including the apparatus 10, the differential amplifiers 72 and the converters 76 is built, in this example, as a single integrated circuit on a single semiconductor chip. Accordingly, the output of the integrated circuit is the digital difference signals 78, rather than the raw signals 26. The significance of this can now be described by returning to Fig. 6.
- Fig. 6 shows only a single cycle of the temporal modulation signal 80 superimposed on the main profile 82 by modulation of the input to the experiment.
- the main profile 82 can be considered as a D.C. background.
- the amplitude of the temporal modulation signal 80 is much smaller than the amplitude of the D.C. background 82, symbolised by . breaking the vertical (Intensity) axis at 84. It can be shown that in a profile such as that of Fig. 6, arising from a measurement application of the type mentioned above, for example, the D.C. value of the main profile 82 does not contain useful information, but the amplitude and phase of the temporal modulation signal 80 are both useful.
- the nature of the profiles 80, 82 present signal processing problems, as noted above.
- the D.C. amplitude of the main profile 82 might be 1000 times greater than the amplitude of the temporal modulation 80. Even ignoring the effect of noise, a conventional eight-bit analogue-to-digital converter, capable of resolving only 256 states, would not be able to measure a change in amplitude between points to l 4 .
- the differential amplifiers 72 are used to form the two differences required for calculating the modulation amplitude (Equation 1 above), and for amplifying these two differences.
- the D.C. background of the main profile 82 is thus removed from these two difference signals.
- the amplitude of the difference signals will be much smaller than the absolute intensity of the incident light, allowing the difference signals to be amplified within the amplifiers 72.
- problems of analogue-to-digital converter dynamic range are significantly reduced and consequently, the difference signals can be digitised more easily, without requiring excessive complexity, bandwidth or cost for the converters 76.
- the apparatus 10 can be used without the differential amplifiers 72 and converters 76, and that the differential amplifiers 72 and converters 76 could be used in the manner described above, in conjunction with other apparatus.
- CMOS complementary metal-oxide-semiconductor
- Other technologies can be used.
- Many other circuit arrangements and component choices can be made within the scope of the invention.
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1209792.9A GB2488082A (en) | 2009-12-05 | 2010-12-03 | Improvements in and relating to optical sensors and optical sensing |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0921354.7A GB0921354D0 (en) | 2009-12-05 | 2009-12-05 | Improvements in and relating to optical sensors and optical sensing |
| GB0921354.7 | 2009-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2011067566A1 true WO2011067566A1 (en) | 2011-06-09 |
Family
ID=41642011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB2010/002216 Ceased WO2011067566A1 (en) | 2009-12-05 | 2010-12-03 | Improvements in and relating to optical sensors and optical sensing |
Country Status (2)
| Country | Link |
|---|---|
| GB (2) | GB0921354D0 (en) |
| WO (1) | WO2011067566A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040079977A1 (en) * | 2002-10-29 | 2004-04-29 | Ying Bond Y. | CMOS image sensor with variable conversion gain |
| US20060103749A1 (en) * | 2004-11-12 | 2006-05-18 | Xinping He | Image sensor and pixel that has switchable capacitance at the floating node |
| WO2006117955A1 (en) * | 2005-04-28 | 2006-11-09 | Sharp Kabushiki Kaisha | Display device and method for manufacturing same |
| US20080290259A1 (en) * | 2005-05-27 | 2008-11-27 | Alan Mathewson | Photon Counting Apparatus |
-
2009
- 2009-12-05 GB GBGB0921354.7A patent/GB0921354D0/en not_active Ceased
-
2010
- 2010-12-03 WO PCT/GB2010/002216 patent/WO2011067566A1/en not_active Ceased
- 2010-12-03 GB GB1209792.9A patent/GB2488082A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040079977A1 (en) * | 2002-10-29 | 2004-04-29 | Ying Bond Y. | CMOS image sensor with variable conversion gain |
| US20060103749A1 (en) * | 2004-11-12 | 2006-05-18 | Xinping He | Image sensor and pixel that has switchable capacitance at the floating node |
| WO2006117955A1 (en) * | 2005-04-28 | 2006-11-09 | Sharp Kabushiki Kaisha | Display device and method for manufacturing same |
| US20080290259A1 (en) * | 2005-05-27 | 2008-11-27 | Alan Mathewson | Photon Counting Apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2488082A (en) | 2012-08-15 |
| GB201209792D0 (en) | 2012-07-18 |
| GB0921354D0 (en) | 2010-01-20 |
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