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GB2488082A - Improvements in and relating to optical sensors and optical sensing - Google Patents

Improvements in and relating to optical sensors and optical sensing Download PDF

Info

Publication number
GB2488082A
GB2488082A GB1209792.9A GB201209792A GB2488082A GB 2488082 A GB2488082 A GB 2488082A GB 201209792 A GB201209792 A GB 201209792A GB 2488082 A GB2488082 A GB 2488082A
Authority
GB
United Kingdom
Prior art keywords
photo diode
switch
capacitance
optical
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB1209792.9A
Other versions
GB201209792D0 (en
Inventor
Mark C Pitter
Michael G Somekh
Nicholas Johnston
Roger Light
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Nottingham
Original Assignee
University of Nottingham
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Nottingham filed Critical University of Nottingham
Publication of GB201209792D0 publication Critical patent/GB201209792D0/en
Publication of GB2488082A publication Critical patent/GB2488082A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • H01L31/02005—
    • H01L31/102—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

A photo diode (12) is connected across a power supply (16,18) by a switch (19). A variable capacitance (14) is connected across the photo diode (12), through a switch (22). Accordingly, the capacitance (14) can be charged by closing the switches (19,22). Thereafter, the switch (19) is open, the photo diode (12) is exposed to illumination (24) and the switch (22) is closed for a measurement period. The degree to which the capacitance (14) discharges through the photo diode (12), during the measurement period, is a measure of the illumination intensity at the photo diode (12) and is output as a voltage at (26). The capacitance (14) is varied so that conversion gain of the apparatus can be increased as illumination intensity reduces, improving the contrast and signal-to-noise attributes of the output signal.
GB1209792.9A 2009-12-05 2010-12-03 Improvements in and relating to optical sensors and optical sensing Withdrawn GB2488082A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0921354.7A GB0921354D0 (en) 2009-12-05 2009-12-05 Improvements in and relating to optical sensors and optical sensing
PCT/GB2010/002216 WO2011067566A1 (en) 2009-12-05 2010-12-03 Improvements in and relating to optical sensors and optical sensing

Publications (2)

Publication Number Publication Date
GB201209792D0 GB201209792D0 (en) 2012-07-18
GB2488082A true GB2488082A (en) 2012-08-15

Family

ID=41642011

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0921354.7A Ceased GB0921354D0 (en) 2009-12-05 2009-12-05 Improvements in and relating to optical sensors and optical sensing
GB1209792.9A Withdrawn GB2488082A (en) 2009-12-05 2010-12-03 Improvements in and relating to optical sensors and optical sensing

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB0921354.7A Ceased GB0921354D0 (en) 2009-12-05 2009-12-05 Improvements in and relating to optical sensors and optical sensing

Country Status (2)

Country Link
GB (2) GB0921354D0 (en)
WO (1) WO2011067566A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040079977A1 (en) * 2002-10-29 2004-04-29 Ying Bond Y. CMOS image sensor with variable conversion gain
US20060103749A1 (en) * 2004-11-12 2006-05-18 Xinping He Image sensor and pixel that has switchable capacitance at the floating node
WO2006117955A1 (en) * 2005-04-28 2006-11-09 Sharp Kabushiki Kaisha Display device and method for manufacturing same
US20080290259A1 (en) * 2005-05-27 2008-11-27 Alan Mathewson Photon Counting Apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040079977A1 (en) * 2002-10-29 2004-04-29 Ying Bond Y. CMOS image sensor with variable conversion gain
US20060103749A1 (en) * 2004-11-12 2006-05-18 Xinping He Image sensor and pixel that has switchable capacitance at the floating node
WO2006117955A1 (en) * 2005-04-28 2006-11-09 Sharp Kabushiki Kaisha Display device and method for manufacturing same
US20080290259A1 (en) * 2005-05-27 2008-11-27 Alan Mathewson Photon Counting Apparatus

Also Published As

Publication number Publication date
GB201209792D0 (en) 2012-07-18
GB0921354D0 (en) 2010-01-20
WO2011067566A1 (en) 2011-06-09

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)