WO2011065250A1 - フォースセンサ - Google Patents
フォースセンサ Download PDFInfo
- Publication number
- WO2011065250A1 WO2011065250A1 PCT/JP2010/070324 JP2010070324W WO2011065250A1 WO 2011065250 A1 WO2011065250 A1 WO 2011065250A1 JP 2010070324 W JP2010070324 W JP 2010070324W WO 2011065250 A1 WO2011065250 A1 WO 2011065250A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- force sensor
- silicon substrate
- electrical connection
- connection support
- displacement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/22—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers
- G01L5/223—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers to joystick controls
Definitions
- the present invention relates to a piezoresistive force sensor used for load measurement.
- a force sensor for load measurement has been used for user interfaces such as touch panels and controllers of mobile devices.
- a bridge formed of a silicon substrate having a diaphragm portion and a plurality of gauge resistors provided on the diaphragm portion opposite to the rim portion
- An insulating base Panex (registered trademark) glass) having a circuit and a recessed portion in the central portion to be bonded to the diaphragm and having a wiring pad electrically connected to the bridge circuit (pyrex (registered trademark) glass)
- a ball solder ball
- the above-described force sensor is required to be miniaturized and reduced in height in accordance with the mobile device to be mounted.
- the ball size is large and it is difficult to reduce the height.
- the contact area of the ball is also reduced, so that the load is concentrated in a narrow area, and the sensor is easily broken.
- wire bonding is used for electrical connection between the wiring pad formed on the base (Pyrex (registered trademark) glass) and the package, so a space such as a cover must be secured to provide a bonding wire. It is difficult for us to reduce the height.
- An object of this invention is to obtain the force sensor which can be reduced in height by simple structure in view of the said subject.
- the present invention proposes a new structure of a piezoresistive force sensor, in which a pressure receiving portion is provided on one of the front and back surfaces of a silicon substrate constituting a displacement portion, and a plurality of piezoresistive elements and a supporting portion are provided on the other.
- a pressure receiving portion is provided on one of the front and back surfaces of a silicon substrate constituting a displacement portion
- a plurality of piezoresistive elements and a supporting portion are provided on the other.
- a displacement portion made of a silicon substrate having a predetermined thickness, a pressure receiving portion positioned on one of the front and back surfaces of the silicon substrate to receive an external load, and the opposite side to the pressure receiving portion
- a plurality of piezoresistive elements disposed on the other of the front and back surfaces of the silicon substrate and whose electrical resistance changes according to the displacement amount of the displacement portion, and protrudingly formed on the other of the front and back surfaces of the silicon substrate It is characterized in that it comprises a plurality of electrical connection support portions which are respectively electrically connected to the element and which displaceably support the displacement portion on the peripheral side of the plurality of piezoresistive elements.
- the plurality of electrical connection support portions are provided at symmetrical positions with respect to the plane center of the displacement portion.
- the displacement portion can be stably supported.
- a silicon substrate can be formed into a planar rectangular shape, and can be provided at each corner of the planar rectangle.
- the electrical connection support is made of nickel alloy or conductive silicon.
- the pressure receiving portion be formed in a cylindrical shape or a polygonal columnar shape that is raised above the displacement portion.
- the sensor sensitivity is stabilized by having this pressure receiving portion.
- an electrical connection support portion supporting the displacement portion and electrically connected to the plurality of piezoresistive elements to the mounting substrate, so that the conventional base substrate and wire can be used. Bonding is not required and the height can be reduced.
- FIG. 1 is a cross-sectional view showing a force sensor 1 to which the present invention is applied
- FIG. 2 is a plan view showing the force sensor 1 from the top side
- FIG. 3 is a plan view showing the force sensor 1 from the bottom side.
- the force sensor 1 is a piezoresistive force sensor, and includes a silicon substrate 10 having a constant thickness without macroscopic irregularities.
- the silicon substrate 10 has a planar rectangular shape, and the central portion thereof constitutes a displacement portion 11 which is displaced by a load.
- a pressure receiving portion 12 for receiving an external load is provided on the surface 10 a of the silicon substrate 10.
- the pressure receiving portion 12 is a cylindrical convex pressure receiving portion raised above the displacement portion 11, and the upper surface peripheral edge is rounded (R-processed).
- the pressure receiving portion 12 is made of nickel alloy or silicon (the same material as the silicon substrate 10). Although the pressure receiving portion 12 can be omitted, the sensor sensitivity can be stabilized by providing the pressure receiving portion 12 on the displacement portion 11.
- a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a
- a circuit wiring portion 16 is connected to each of the plurality of piezoresistive elements 13, and is electrically connected to the plurality of electrical connection support portions 15 via the circuit wiring portion 16.
- the plurality of piezoresistive elements 13 and the circuit wiring portion 16 are covered with an insulating film 14.
- the plurality of electrical connection support portions 15 are positioned further on the peripheral edge of the substrate than the plurality of piezoresistive elements 13 arranged along the peripheral edge of the displacement portion 11 and provided in a state of projecting from the back surface 10b of the silicon substrate 10 There is.
- the electrical connection support portions 15 each have a quadrangular prism shape, and are arranged at four corner portions of the back surface 10 b of the silicon substrate 10 having a planar rectangular shape.
- the plurality of electrical connection support portions 15 have a symmetrical positional relationship with respect to the plane center of the displacement portion 11 because a pair of opposing electrical connection support portions 15 on the diagonal of the silicon substrate 10 can stably support the displacement portion 11.
- Each electrical connection support 15 is made of nickel alloy or low resistance silicon. Further, as described above, the plurality of electrical connection support portions 15 are electrically connected to the plurality of piezoresistive elements 13 via the circuit wiring portion 16 provided in the insulating film 14. That is, the electrical connection support portion 15 has a function as a support portion which supports the displacement portion 11 in a displaceable manner, and a function as an electrical connection portion which holds the plurality of piezoresistive elements 13 in an externally mountable state.
- the force sensor 1 can be mounted on the external mounting substrate 2 by directly connecting the plurality of electrical connection support portions 15 and the corresponding electrodes 20 of the external mounting substrate 2 as shown in FIG.
- solder for example, solder, anisotropic conductive film (ACF), anisotropic conductive paste (ACP), nonconductive film (NCF) can be used. .
- the force sensor 1 supports the displacement portion 11 on the side opposite to the pressure receiving portion 12 side of the silicon substrate 10 and a plurality of the plurality of the piezoresistive elements 13 electrically connected to each other. Since the electrical connection support portion 15 is provided, it can be easily mounted on the external mounting substrate 2 via the plurality of electrical connection support portions 15. As a result, the balls, the base substrate, the package, and the wire bonding, which are essential in the conventional structure, become unnecessary, so that the height can be omitted and the height can be reduced. Further, the force sensor 1 can be realized with a simple configuration, and the cost can be reduced.
- the plurality of electrical connection support portions 15 are provided in the shape of a square pole, but the planar shapes of the plurality of electrical connection support portions 15 can be modified.
- 5 to 8 show modifications of the planar shape of the plurality of electrical connection support portions 15.
- FIG. 5 is a rectangular column with chamfered corner portions of a planar square pillar
- FIG. 6 is cylindrical
- FIG. 8 is a case where the flat L-shape in FIG. 7 is chamfered.
- the position at which the plurality of electrical connection support portions 15 are provided has a degree of freedom as long as it is on the peripheral side of the silicon substrate 10 than the plurality of piezoresistance elements 13. It is preferable to arrange symmetrically with respect to the plane center of.
- the pressure receiving part 12 may be polygonal pillar shape.
- the present invention is applicable to a piezoresistive force sensor for load measurement used for a user interface such as a touch panel or a controller of a mobile device.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Abstract
Description
2 外部実装基板
10 シリコン基板
10a 表面
10b 裏面
11 変位部
12 受圧部
13 ピエゾ抵抗素子
14 絶縁膜
15 電気接続支持部
16 コンタクト部
20 電極
Claims (5)
- 所定厚さのシリコン基板からなる変位部と、
前記シリコン基板の表裏面の一方に位置して外部からの荷重を受ける受圧部と、
この受圧部とは反対側となる前記シリコン基板の表裏面の他方に配置され、前記変位部の変位量に応じて電気抵抗が変化する複数のピエゾ抵抗素子と、
前記シリコン基板の表裏面の他方に突出形成され、前記複数のピエゾ抵抗素子とそれぞれ電気的に接続し、かつ、該複数のピエゾ抵抗素子よりも周縁側で前記変位部を変位自在に支持する複数の電気接続支持部と、
を備えたことを特徴とするフォースセンサ。 - 請求の範囲第1項に記載のフォースセンサにおいて、前記複数の電気接続支持部は、前記変位部の平面中心に関して対称な位置に設けたフォースセンサ。
- 請求の範囲第2項に記載のフォースセンサにおいて、前記複数の電気接続支持部は、平面矩形状をなすシリコン基板の角部にそれぞれ設けられているフォースセンサ。
- 請求の範囲第1項ないし第3項のいずれか一項に記載のフォースセンサにおいて、前記電気接続支持部は、ニッケル合金または導電性を有するシリコンからなるフォースセンサ。
- 請求の範囲第1項に記載のフォースセンサにおいて、前記受圧部は、前記変位部上に隆起した円柱状または多角柱状であるフォースセンサ。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010800411066A CN102510998A (zh) | 2009-11-25 | 2010-11-16 | 测力传感器 |
| JP2011543213A JPWO2011065250A1 (ja) | 2009-11-25 | 2010-11-16 | フォースセンサ |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-267076 | 2009-11-25 | ||
| JP2009267076 | 2009-11-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2011065250A1 true WO2011065250A1 (ja) | 2011-06-03 |
Family
ID=44066355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2010/070324 Ceased WO2011065250A1 (ja) | 2009-11-25 | 2010-11-16 | フォースセンサ |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2011065250A1 (ja) |
| CN (1) | CN102510998A (ja) |
| WO (1) | WO2011065250A1 (ja) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016120093A3 (de) * | 2015-01-30 | 2016-11-03 | Robert Bosch Gmbh | Sensoranordnung zur indirekten erfassung eines drehmoments einer rotierbar gelagerten welle |
| EP3655740A4 (en) * | 2017-07-19 | 2021-07-14 | Nextinput, Inc. | VOLTAGE TRANSFER STACKING IN A MEMS FORCE SENSOR |
| US11243125B2 (en) | 2017-02-09 | 2022-02-08 | Nextinput, Inc. | Integrated piezoresistive and piezoelectric fusion force sensor |
| US11243126B2 (en) | 2017-07-27 | 2022-02-08 | Nextinput, Inc. | Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture |
| US11255737B2 (en) | 2017-02-09 | 2022-02-22 | Nextinput, Inc. | Integrated digital force sensors and related methods of manufacture |
| US11423686B2 (en) | 2017-07-25 | 2022-08-23 | Qorvo Us, Inc. | Integrated fingerprint and force sensor |
| US11579028B2 (en) | 2017-10-17 | 2023-02-14 | Nextinput, Inc. | Temperature coefficient of offset compensation for force sensor and strain gauge |
| US11874185B2 (en) | 2017-11-16 | 2024-01-16 | Nextinput, Inc. | Force attenuator for force sensor |
| WO2025229509A1 (en) * | 2024-05-02 | 2025-11-06 | Politecnico Di Torino | Load-cell device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7244081B2 (ja) * | 2019-09-06 | 2023-03-22 | 株式会社タニタ | 重量測定装置およびロードセルユニット |
| DE112020006261T5 (de) * | 2019-12-20 | 2022-09-29 | Alps Alpine Co., Ltd. | Kraftsensor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62168439U (ja) * | 1986-04-16 | 1987-10-26 | ||
| JPH0290029A (ja) * | 1988-09-28 | 1990-03-29 | Agency Of Ind Science & Technol | 触覚センサ |
| JPH03186726A (ja) * | 1989-12-15 | 1991-08-14 | Wako:Kk | 力検出装置用起歪体の製造方法 |
| JPH06132543A (ja) * | 1992-10-20 | 1994-05-13 | Ishizuka Glass Co Ltd | 力変換素子 |
| JPH09126925A (ja) * | 1995-11-02 | 1997-05-16 | Hokuriku Electric Ind Co Ltd | 半導体圧力センサ |
| JP2004212047A (ja) * | 2001-02-09 | 2004-07-29 | K-Tech Devices Corp | 応力センサ |
| JP2009133807A (ja) * | 2007-10-30 | 2009-06-18 | Kyocera Corp | センサおよびセンサ装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63128236A (ja) * | 1986-11-18 | 1988-05-31 | Fuji Electric Co Ltd | 圧覚センサ |
| JPH0663893B2 (ja) * | 1987-03-06 | 1994-08-22 | 工業技術院長 | 接触覚センサ |
| JPH03237761A (ja) * | 1989-07-11 | 1991-10-23 | Nippondenso Co Ltd | 半導体歪センサ及びその製造方法 |
| JP3435844B2 (ja) * | 1994-03-07 | 2003-08-11 | 株式会社デンソー | 半導体加速度センサ及びその製造方法 |
| CN1161743A (zh) * | 1994-10-28 | 1997-10-08 | 株式会社小松制作所 | 负荷传感器基板及负荷传感器 |
| WO2002057731A1 (en) * | 2001-01-22 | 2002-07-25 | K-Tech Devices Corp. | Stress sensor |
| JP4204919B2 (ja) * | 2002-08-07 | 2009-01-07 | Hoya株式会社 | コンタクト部品及びその製造方法、並びに該コンタクト部品を有する検査治具 |
| JP3863163B2 (ja) * | 2005-02-10 | 2006-12-27 | 北陸電気工業株式会社 | 半導体力センサ |
-
2010
- 2010-11-16 WO PCT/JP2010/070324 patent/WO2011065250A1/ja not_active Ceased
- 2010-11-16 CN CN2010800411066A patent/CN102510998A/zh active Pending
- 2010-11-16 JP JP2011543213A patent/JPWO2011065250A1/ja not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62168439U (ja) * | 1986-04-16 | 1987-10-26 | ||
| JPH0290029A (ja) * | 1988-09-28 | 1990-03-29 | Agency Of Ind Science & Technol | 触覚センサ |
| JPH03186726A (ja) * | 1989-12-15 | 1991-08-14 | Wako:Kk | 力検出装置用起歪体の製造方法 |
| JPH06132543A (ja) * | 1992-10-20 | 1994-05-13 | Ishizuka Glass Co Ltd | 力変換素子 |
| JPH09126925A (ja) * | 1995-11-02 | 1997-05-16 | Hokuriku Electric Ind Co Ltd | 半導体圧力センサ |
| JP2004212047A (ja) * | 2001-02-09 | 2004-07-29 | K-Tech Devices Corp | 応力センサ |
| JP2009133807A (ja) * | 2007-10-30 | 2009-06-18 | Kyocera Corp | センサおよびセンサ装置 |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016120093A3 (de) * | 2015-01-30 | 2016-11-03 | Robert Bosch Gmbh | Sensoranordnung zur indirekten erfassung eines drehmoments einer rotierbar gelagerten welle |
| US11808644B2 (en) | 2017-02-09 | 2023-11-07 | Qorvo Us, Inc. | Integrated piezoresistive and piezoelectric fusion force sensor |
| US11243125B2 (en) | 2017-02-09 | 2022-02-08 | Nextinput, Inc. | Integrated piezoresistive and piezoelectric fusion force sensor |
| US11255737B2 (en) | 2017-02-09 | 2022-02-22 | Nextinput, Inc. | Integrated digital force sensors and related methods of manufacture |
| US11946817B2 (en) | 2017-02-09 | 2024-04-02 | DecaWave, Ltd. | Integrated digital force sensors and related methods of manufacture |
| US11604104B2 (en) | 2017-02-09 | 2023-03-14 | Qorvo Us, Inc. | Integrated piezoresistive and piezoelectric fusion force sensor |
| EP3655740A4 (en) * | 2017-07-19 | 2021-07-14 | Nextinput, Inc. | VOLTAGE TRANSFER STACKING IN A MEMS FORCE SENSOR |
| US11221263B2 (en) | 2017-07-19 | 2022-01-11 | Nextinput, Inc. | Microelectromechanical force sensor having a strain transfer layer arranged on the sensor die |
| US11423686B2 (en) | 2017-07-25 | 2022-08-23 | Qorvo Us, Inc. | Integrated fingerprint and force sensor |
| US11243126B2 (en) | 2017-07-27 | 2022-02-08 | Nextinput, Inc. | Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture |
| US11609131B2 (en) | 2017-07-27 | 2023-03-21 | Qorvo Us, Inc. | Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture |
| US11946816B2 (en) | 2017-07-27 | 2024-04-02 | Nextinput, Inc. | Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture |
| US11898918B2 (en) | 2017-10-17 | 2024-02-13 | Nextinput, Inc. | Temperature coefficient of offset compensation for force sensor and strain gauge |
| US11579028B2 (en) | 2017-10-17 | 2023-02-14 | Nextinput, Inc. | Temperature coefficient of offset compensation for force sensor and strain gauge |
| US12203819B2 (en) | 2017-10-17 | 2025-01-21 | Nextinput, Inc. | Temperature coefficient of offset compensation for force sensor and strain gauge |
| US11874185B2 (en) | 2017-11-16 | 2024-01-16 | Nextinput, Inc. | Force attenuator for force sensor |
| WO2025229509A1 (en) * | 2024-05-02 | 2025-11-06 | Politecnico Di Torino | Load-cell device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2011065250A1 (ja) | 2013-04-11 |
| CN102510998A (zh) | 2012-06-20 |
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