WO2011065250A1 - Force sensor - Google Patents
Force sensor Download PDFInfo
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- WO2011065250A1 WO2011065250A1 PCT/JP2010/070324 JP2010070324W WO2011065250A1 WO 2011065250 A1 WO2011065250 A1 WO 2011065250A1 JP 2010070324 W JP2010070324 W JP 2010070324W WO 2011065250 A1 WO2011065250 A1 WO 2011065250A1
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- Prior art keywords
- force sensor
- silicon substrate
- electrical connection
- connection support
- displacement
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/22—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers
- G01L5/223—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers to joystick controls
Definitions
- the present invention relates to a piezoresistive force sensor used for load measurement.
- a force sensor for load measurement has been used for user interfaces such as touch panels and controllers of mobile devices.
- a bridge formed of a silicon substrate having a diaphragm portion and a plurality of gauge resistors provided on the diaphragm portion opposite to the rim portion
- An insulating base Panex (registered trademark) glass) having a circuit and a recessed portion in the central portion to be bonded to the diaphragm and having a wiring pad electrically connected to the bridge circuit (pyrex (registered trademark) glass)
- a ball solder ball
- the above-described force sensor is required to be miniaturized and reduced in height in accordance with the mobile device to be mounted.
- the ball size is large and it is difficult to reduce the height.
- the contact area of the ball is also reduced, so that the load is concentrated in a narrow area, and the sensor is easily broken.
- wire bonding is used for electrical connection between the wiring pad formed on the base (Pyrex (registered trademark) glass) and the package, so a space such as a cover must be secured to provide a bonding wire. It is difficult for us to reduce the height.
- An object of this invention is to obtain the force sensor which can be reduced in height by simple structure in view of the said subject.
- the present invention proposes a new structure of a piezoresistive force sensor, in which a pressure receiving portion is provided on one of the front and back surfaces of a silicon substrate constituting a displacement portion, and a plurality of piezoresistive elements and a supporting portion are provided on the other.
- a pressure receiving portion is provided on one of the front and back surfaces of a silicon substrate constituting a displacement portion
- a plurality of piezoresistive elements and a supporting portion are provided on the other.
- a displacement portion made of a silicon substrate having a predetermined thickness, a pressure receiving portion positioned on one of the front and back surfaces of the silicon substrate to receive an external load, and the opposite side to the pressure receiving portion
- a plurality of piezoresistive elements disposed on the other of the front and back surfaces of the silicon substrate and whose electrical resistance changes according to the displacement amount of the displacement portion, and protrudingly formed on the other of the front and back surfaces of the silicon substrate It is characterized in that it comprises a plurality of electrical connection support portions which are respectively electrically connected to the element and which displaceably support the displacement portion on the peripheral side of the plurality of piezoresistive elements.
- the plurality of electrical connection support portions are provided at symmetrical positions with respect to the plane center of the displacement portion.
- the displacement portion can be stably supported.
- a silicon substrate can be formed into a planar rectangular shape, and can be provided at each corner of the planar rectangle.
- the electrical connection support is made of nickel alloy or conductive silicon.
- the pressure receiving portion be formed in a cylindrical shape or a polygonal columnar shape that is raised above the displacement portion.
- the sensor sensitivity is stabilized by having this pressure receiving portion.
- an electrical connection support portion supporting the displacement portion and electrically connected to the plurality of piezoresistive elements to the mounting substrate, so that the conventional base substrate and wire can be used. Bonding is not required and the height can be reduced.
- FIG. 1 is a cross-sectional view showing a force sensor 1 to which the present invention is applied
- FIG. 2 is a plan view showing the force sensor 1 from the top side
- FIG. 3 is a plan view showing the force sensor 1 from the bottom side.
- the force sensor 1 is a piezoresistive force sensor, and includes a silicon substrate 10 having a constant thickness without macroscopic irregularities.
- the silicon substrate 10 has a planar rectangular shape, and the central portion thereof constitutes a displacement portion 11 which is displaced by a load.
- a pressure receiving portion 12 for receiving an external load is provided on the surface 10 a of the silicon substrate 10.
- the pressure receiving portion 12 is a cylindrical convex pressure receiving portion raised above the displacement portion 11, and the upper surface peripheral edge is rounded (R-processed).
- the pressure receiving portion 12 is made of nickel alloy or silicon (the same material as the silicon substrate 10). Although the pressure receiving portion 12 can be omitted, the sensor sensitivity can be stabilized by providing the pressure receiving portion 12 on the displacement portion 11.
- a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a plurality of piezoresistive elements 13 and a plurality of electrical connection support portions 15 are provided on the back surface 10b of the silicon substrate 10, as shown in FIG. 3, a
- a circuit wiring portion 16 is connected to each of the plurality of piezoresistive elements 13, and is electrically connected to the plurality of electrical connection support portions 15 via the circuit wiring portion 16.
- the plurality of piezoresistive elements 13 and the circuit wiring portion 16 are covered with an insulating film 14.
- the plurality of electrical connection support portions 15 are positioned further on the peripheral edge of the substrate than the plurality of piezoresistive elements 13 arranged along the peripheral edge of the displacement portion 11 and provided in a state of projecting from the back surface 10b of the silicon substrate 10 There is.
- the electrical connection support portions 15 each have a quadrangular prism shape, and are arranged at four corner portions of the back surface 10 b of the silicon substrate 10 having a planar rectangular shape.
- the plurality of electrical connection support portions 15 have a symmetrical positional relationship with respect to the plane center of the displacement portion 11 because a pair of opposing electrical connection support portions 15 on the diagonal of the silicon substrate 10 can stably support the displacement portion 11.
- Each electrical connection support 15 is made of nickel alloy or low resistance silicon. Further, as described above, the plurality of electrical connection support portions 15 are electrically connected to the plurality of piezoresistive elements 13 via the circuit wiring portion 16 provided in the insulating film 14. That is, the electrical connection support portion 15 has a function as a support portion which supports the displacement portion 11 in a displaceable manner, and a function as an electrical connection portion which holds the plurality of piezoresistive elements 13 in an externally mountable state.
- the force sensor 1 can be mounted on the external mounting substrate 2 by directly connecting the plurality of electrical connection support portions 15 and the corresponding electrodes 20 of the external mounting substrate 2 as shown in FIG.
- solder for example, solder, anisotropic conductive film (ACF), anisotropic conductive paste (ACP), nonconductive film (NCF) can be used. .
- the force sensor 1 supports the displacement portion 11 on the side opposite to the pressure receiving portion 12 side of the silicon substrate 10 and a plurality of the plurality of the piezoresistive elements 13 electrically connected to each other. Since the electrical connection support portion 15 is provided, it can be easily mounted on the external mounting substrate 2 via the plurality of electrical connection support portions 15. As a result, the balls, the base substrate, the package, and the wire bonding, which are essential in the conventional structure, become unnecessary, so that the height can be omitted and the height can be reduced. Further, the force sensor 1 can be realized with a simple configuration, and the cost can be reduced.
- the plurality of electrical connection support portions 15 are provided in the shape of a square pole, but the planar shapes of the plurality of electrical connection support portions 15 can be modified.
- 5 to 8 show modifications of the planar shape of the plurality of electrical connection support portions 15.
- FIG. 5 is a rectangular column with chamfered corner portions of a planar square pillar
- FIG. 6 is cylindrical
- FIG. 8 is a case where the flat L-shape in FIG. 7 is chamfered.
- the position at which the plurality of electrical connection support portions 15 are provided has a degree of freedom as long as it is on the peripheral side of the silicon substrate 10 than the plurality of piezoresistance elements 13. It is preferable to arrange symmetrically with respect to the plane center of.
- the pressure receiving part 12 may be polygonal pillar shape.
- the present invention is applicable to a piezoresistive force sensor for load measurement used for a user interface such as a touch panel or a controller of a mobile device.
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Abstract
Description
本発明は、荷重測定に用いられるピエゾ抵抗方式のフォースセンサに関する。 The present invention relates to a piezoresistive force sensor used for load measurement.
近年では、モバイル機器のタッチパネルやコントローラ等のユーザーインターフェースに荷重測定用のフォースセンサが用いられている。フォースセンサは種々あるが、例えば特許文献1の図1に示されるピエゾ抵抗方式では、ダイヤフラム部を有するシリコン基板と、リム部とは反対側のダイヤフラム部上に設けた複数のゲージ抵抗からなるブリッジ回路と、ダイヤフラムと接着される中央部に凹部を有し、ブリッジ回路と電気的に接続する配線パッドを形成した絶縁性の基部(パイレックス(登録商標)ガラス)と、ワイヤーボンディングにより配線パッドと電気的に接続されたパッケージと、ダイヤフラム部上に設けた球(サファイヤ球)とを備えている。この従来のフォースセンサは、サファイヤ球を介して受けた荷重に応じてダイヤフラム部が変位し、その変位量に応じてブリッジ回路の出力が変化することから、荷重を検出することができる。従来構造のピエゾ抵抗式フォースセンサは、例えば特許文献2-5にも記載されている。
In recent years, a force sensor for load measurement has been used for user interfaces such as touch panels and controllers of mobile devices. There are various force sensors. For example, in the piezoresistive method shown in FIG. 1 of
上述のフォースセンサは、搭載されるモバイル機器に合わせて、小型化及び低背化が要求される。しかし、変位部上に設けた球を介して荷重を受ける従来構造では、球サイズが大きく、低背化が難しい。球サイズを小さくすると、球の接触面積も小さくなるため狭いエリアに荷重が集中することとなり、センサが壊れやすくなってしまう。また、従来構造では、基部(パイレックス(登録商標)ガラス)に形成した配線パッドとパッケージとの電気的接続にワイヤーボンディングを用いているので、ボンディングワイヤーを設けるためにカバーなどのスペースを確保しなければならず、これによっても低背化が難しかった。 The above-described force sensor is required to be miniaturized and reduced in height in accordance with the mobile device to be mounted. However, in the conventional structure which receives a load via a ball provided on the displacement portion, the ball size is large and it is difficult to reduce the height. When the ball size is reduced, the contact area of the ball is also reduced, so that the load is concentrated in a narrow area, and the sensor is easily broken. Also, in the conventional structure, wire bonding is used for electrical connection between the wiring pad formed on the base (Pyrex (registered trademark) glass) and the package, so a space such as a cover must be secured to provide a bonding wire. It is difficult for us to reduce the height.
本発明は、上記課題を鑑みて、簡単な構成で低背化可能なフォースセンサを得ることを目的とする。 An object of this invention is to obtain the force sensor which can be reduced in height by simple structure in view of the said subject.
本発明は、ピエゾ抵抗式フォースセンサの新たな構造を提案するもので、変位部を構成するシリコン基板の表裏面の一方に受圧部を、他方に複数のピエゾ抵抗素子と支持部を設け、この支持部を複数のピエゾ抵抗素子と電気的に接続すれば、実装時に該支持部自体を外部実装基板に直接接続でき、従来の球、ベース基板、パッケージ及びワイヤーボンディングは不要となることから、低背化できることに着目して完成されたものである。 The present invention proposes a new structure of a piezoresistive force sensor, in which a pressure receiving portion is provided on one of the front and back surfaces of a silicon substrate constituting a displacement portion, and a plurality of piezoresistive elements and a supporting portion are provided on the other. By electrically connecting the support to a plurality of piezoresistive elements, the support itself can be directly connected to the external mounting substrate at the time of mounting, and the conventional ball, base substrate, package and wire bonding become unnecessary. It was completed focusing on the fact that it can be turned.
すなわち、本発明は、所定厚さのシリコン基板からなる変位部と、前記シリコン基板の表裏面の一方に位置して外部からの荷重を受ける受圧部と、この受圧部とは反対側となる前記シリコン基板の表裏面の他方に配置され、前記変位部の変位量に応じて電気抵抗が変化する複数のピエゾ抵抗素子と、前記シリコン基板の表裏面の他方に突出形成され、前記複数のピエゾ抵抗素子とそれぞれ電気的に接続し、かつ、該複数のピエゾ抵抗素子よりも周縁側で前記変位部を変位自在に支持する複数の電気接続支持部とを備えたことを特徴としている。 That is, according to the present invention, a displacement portion made of a silicon substrate having a predetermined thickness, a pressure receiving portion positioned on one of the front and back surfaces of the silicon substrate to receive an external load, and the opposite side to the pressure receiving portion A plurality of piezoresistive elements disposed on the other of the front and back surfaces of the silicon substrate and whose electrical resistance changes according to the displacement amount of the displacement portion, and protrudingly formed on the other of the front and back surfaces of the silicon substrate It is characterized in that it comprises a plurality of electrical connection support portions which are respectively electrically connected to the element and which displaceably support the displacement portion on the peripheral side of the plurality of piezoresistive elements.
前記複数の電気接続支持部は、前記変位部の平面中心に関して対称な位置に設けることが好ましい。この態様によれば、変位部を安定に支持することができる。具体的には例えば、シリコン基板を平面矩形状とし、この平面矩形の角部にそれぞれ設けることができる。 Preferably, the plurality of electrical connection support portions are provided at symmetrical positions with respect to the plane center of the displacement portion. According to this aspect, the displacement portion can be stably supported. Specifically, for example, a silicon substrate can be formed into a planar rectangular shape, and can be provided at each corner of the planar rectangle.
前記電気接続支持部は、ニッケル合金または導電性を有するシリコンからなることが実際的である。 It is practical that the electrical connection support is made of nickel alloy or conductive silicon.
前記受圧部は、前記変位部上に隆起した円柱状または多角柱状で形成することが好ましい。この受圧部を有することで、センサ感度が安定化する。 It is preferable that the pressure receiving portion be formed in a cylindrical shape or a polygonal columnar shape that is raised above the displacement portion. The sensor sensitivity is stabilized by having this pressure receiving portion.
本発明によれば、変位部を支持し、かつ、複数のピエゾ抵抗素子と電気的に接続した電気接続支持部を実装基板に対して直に接続することができるので、従来のベース基板及びワイヤーボンディングが不要となり、低背化を図れる。 According to the present invention, it is possible to directly connect an electrical connection support portion supporting the displacement portion and electrically connected to the plurality of piezoresistive elements to the mounting substrate, so that the conventional base substrate and wire can be used. Bonding is not required and the height can be reduced.
図1は本発明を適用したフォースセンサ1を示す断面図、図2はフォースセンサ1を上面側から見て示す平面図、図3はフォースセンサ1を下面側から見て示す平面図である。フォースセンサ1は、ピエゾ抵抗方式のフォースセンサであって、巨視的な凹凸のない一定厚さのシリコン基板10を備えている。シリコン基板10は、平面矩形状をなし、その中央部が荷重により変位する変位部11を構成している。
FIG. 1 is a cross-sectional view showing a
シリコン基板10の表面10aには、図2に示されるように、外部からの荷重を受ける受圧部12が設けられている。受圧部12は、変位部11の上に隆起した円柱状の凸受圧部であり、その上面周縁に丸め加工(R加工)が施されている。この受圧部12は、ニッケル合金またはシリコン(シリコン基板10と同一材質)からなる。受圧部12は省略可能であるが、変位部11上に受圧部12を設けることでセンサ感度を安定させることができる。
As shown in FIG. 2, a
一方、シリコン基板10の裏面10bには、図3に示されるように、複数のピエゾ抵抗素子13と複数の電気接続支持部15が設けられている。複数のピエゾ抵抗素子13は、変位部11の周縁部に沿って、隣り合う素子同士が90°異なる位相(互いに直交する位置関係)で配置されている。受圧部12で受けた荷重により変位部11が変位すると、その変位量に応じて複数のピエゾ抵抗素子13の電気抵抗が変化し、この複数のピエゾ抵抗素子13によって構成されたブリッジ回路の中点電位が変化し、この中点電位がセンサ出力として公知の測定装置に出力される。複数のピエゾ抵抗素子13には回路配線部16がそれぞれ接続されており、この回路配線部16を介して上記複数の電気接続支持部15と電気的に接続されている。複数のピエゾ抵抗素子13と回路配線部16は、絶縁膜14によって覆われている。
On the other hand, on the
複数の電気接続支持部15は、変位部11の周縁部に沿って配置した複数のピエゾ抵抗素子13よりもさらに基板周縁側に位置し、シリコン基板10の裏面10bから突出した状態で設けられている。本実施形態では図3に示すように、各電気接続支持部15が四角柱状をなし、平面矩形状をなすシリコン基板10の裏面10bの4つの角部にそれぞれ配置されている。複数の電気接続支持部15は、シリコン基板10の対角線上で対向する一対が変位部11の平面中心に関して対称な位置関係にあるので、変位部11を安定に支持することができる。各電気接続支持部15は、ニッケル合金または低抵抗シリコンからなる。また、上述のように複数の電気接続支持部15は、絶縁膜14内に設けた回路配線部16を介して、複数のピエゾ抵抗素子13とそれぞれ電気的に接続されている。つまり、電気接続支持部15は、変位部11を変位自在に支持する支持部としての機能と、複数のピエゾ抵抗素子13を外部実装可能な状態に保持する電気接続部としての機能とを有する。
The plurality of electrical
上記フォースセンサ1は、図4に示すように、複数の電気接続支持部15と外部実装基板2の対応する電極20とを直接接続することにより、外部実装基板2に実装できる。この実装には、例えば半田、異方性導電膜(ACF;Anisotropic Conductive Film)、異方性導電ペースト(ACP;Anisotropic Conductive Paste)、非導電性膜(NCF;Non Conductive Film)を用いることができる。
The
以上のように本実施形態のフォースセンサ1は、シリコン基板10の受圧部12側とは反対側に、変位部11を支持し、かつ、複数のピエゾ抵抗素子13と電気的に接続した複数の電気接続支持部15を備えたので、この複数の電気接続支持部15を介して外部実装基板2に容易に実装することができる。これにより、従来構造では必須であった球、ベース基板、パッケージ及びワイヤーボンディングは不要となるので、これらの高さ分を省略できて低背化を図れる。また、簡単な構成でフォースセンサ1を実現でき、低コスト化も図れる。
As described above, the
本実施形態では、複数の電気接続支持部15を四角柱状で設けたが、複数の電気接続支持部15の平面形状は変形可能である。図5~図8は複数の電気接続支持部15の平面形状の変形例であって、図5は平面正方形の柱の角部を面取りした四角柱状、図6は円柱状、図7は平面L字形の柱状、図8は図7の平面L字形を面取りした柱状とした場合である。また、複数の電気接続支持部15を設ける位置は、複数のピエゾ抵抗素子13よりもシリコン基板10の周縁側であれば自由度があるが、変位部11を安定に支持するために変位部11の平面中心に関して対称に配置することが好ましい。
In the present embodiment, the plurality of electrical
また本実施形態では、円柱状の受圧部12を設けたが、受圧部12は多角柱状であってもよい。
Moreover, although the cylindrical
本願発明は、モバイル機器のタッチパネルやコントローラ等のユーザーインターフェースに用いられる荷重測定用のピエゾ抵抗式フォースセンサに適用可能である。 The present invention is applicable to a piezoresistive force sensor for load measurement used for a user interface such as a touch panel or a controller of a mobile device.
1 フォースセンサ
2 外部実装基板
10 シリコン基板
10a 表面
10b 裏面
11 変位部
12 受圧部
13 ピエゾ抵抗素子
14 絶縁膜
15 電気接続支持部
16 コンタクト部
20 電極
Claims (5)
前記シリコン基板の表裏面の一方に位置して外部からの荷重を受ける受圧部と、
この受圧部とは反対側となる前記シリコン基板の表裏面の他方に配置され、前記変位部の変位量に応じて電気抵抗が変化する複数のピエゾ抵抗素子と、
前記シリコン基板の表裏面の他方に突出形成され、前記複数のピエゾ抵抗素子とそれぞれ電気的に接続し、かつ、該複数のピエゾ抵抗素子よりも周縁側で前記変位部を変位自在に支持する複数の電気接続支持部と、
を備えたことを特徴とするフォースセンサ。 A displacement portion made of a silicon substrate having a predetermined thickness;
A pressure receiving portion positioned on one of the front and back surfaces of the silicon substrate to receive an external load;
A plurality of piezoresistive elements disposed on the other of the front and back surfaces of the silicon substrate opposite to the pressure receiving portion, the electric resistance of which changes in accordance with the amount of displacement of the displacement portion;
A plurality of projections formed on the other of the front and back surfaces of the silicon substrate, electrically connected to the plurality of piezoresistive elements, and displaceably supporting the displacement portion on the peripheral side of the plurality of piezoresistive elements The electrical connection support of the
Force sensor characterized by having.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010800411066A CN102510998A (en) | 2009-11-25 | 2010-11-16 | load cell |
| JP2011543213A JPWO2011065250A1 (en) | 2009-11-25 | 2010-11-16 | Force sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-267076 | 2009-11-25 | ||
| JP2009267076 | 2009-11-25 |
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| WO2011065250A1 true WO2011065250A1 (en) | 2011-06-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| PCT/JP2010/070324 Ceased WO2011065250A1 (en) | 2009-11-25 | 2010-11-16 | Force sensor |
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| Country | Link |
|---|---|
| JP (1) | JPWO2011065250A1 (en) |
| CN (1) | CN102510998A (en) |
| WO (1) | WO2011065250A1 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016120093A3 (en) * | 2015-01-30 | 2016-11-03 | Robert Bosch Gmbh | Sensor arrangement for indirectly sensing the torque of a rotatably mounted shaft |
| EP3655740A4 (en) * | 2017-07-19 | 2021-07-14 | Nextinput, Inc. | STRESS TRANSFER STACKING IN MEMS FORCE SENSOR |
| US11243125B2 (en) | 2017-02-09 | 2022-02-08 | Nextinput, Inc. | Integrated piezoresistive and piezoelectric fusion force sensor |
| US11243126B2 (en) | 2017-07-27 | 2022-02-08 | Nextinput, Inc. | Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture |
| US11255737B2 (en) | 2017-02-09 | 2022-02-22 | Nextinput, Inc. | Integrated digital force sensors and related methods of manufacture |
| US11423686B2 (en) | 2017-07-25 | 2022-08-23 | Qorvo Us, Inc. | Integrated fingerprint and force sensor |
| US11579028B2 (en) | 2017-10-17 | 2023-02-14 | Nextinput, Inc. | Temperature coefficient of offset compensation for force sensor and strain gauge |
| US11874185B2 (en) | 2017-11-16 | 2024-01-16 | Nextinput, Inc. | Force attenuator for force sensor |
| WO2025229509A1 (en) * | 2024-05-02 | 2025-11-06 | Politecnico Di Torino | Load-cell device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7244081B2 (en) * | 2019-09-06 | 2023-03-22 | 株式会社タニタ | Weighing device and load cell unit |
| DE112020006261T5 (en) * | 2019-12-20 | 2022-09-29 | Alps Alpine Co., Ltd. | force sensor |
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| JPS62168439U (en) * | 1986-04-16 | 1987-10-26 | ||
| JPH0290029A (en) * | 1988-09-28 | 1990-03-29 | Agency Of Ind Science & Technol | Detecting device for torque |
| JPH03186726A (en) * | 1989-12-15 | 1991-08-14 | Wako:Kk | Manufacture of strain-generating body for force detector |
| JPH06132543A (en) * | 1992-10-20 | 1994-05-13 | Ishizuka Glass Co Ltd | Force conversion element |
| JPH09126925A (en) * | 1995-11-02 | 1997-05-16 | Hokuriku Electric Ind Co Ltd | Semiconductor pressure sensor |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016120093A3 (en) * | 2015-01-30 | 2016-11-03 | Robert Bosch Gmbh | Sensor arrangement for indirectly sensing the torque of a rotatably mounted shaft |
| US11808644B2 (en) | 2017-02-09 | 2023-11-07 | Qorvo Us, Inc. | Integrated piezoresistive and piezoelectric fusion force sensor |
| US11243125B2 (en) | 2017-02-09 | 2022-02-08 | Nextinput, Inc. | Integrated piezoresistive and piezoelectric fusion force sensor |
| US11255737B2 (en) | 2017-02-09 | 2022-02-22 | Nextinput, Inc. | Integrated digital force sensors and related methods of manufacture |
| US11946817B2 (en) | 2017-02-09 | 2024-04-02 | DecaWave, Ltd. | Integrated digital force sensors and related methods of manufacture |
| US11604104B2 (en) | 2017-02-09 | 2023-03-14 | Qorvo Us, Inc. | Integrated piezoresistive and piezoelectric fusion force sensor |
| EP3655740A4 (en) * | 2017-07-19 | 2021-07-14 | Nextinput, Inc. | STRESS TRANSFER STACKING IN MEMS FORCE SENSOR |
| US11221263B2 (en) | 2017-07-19 | 2022-01-11 | Nextinput, Inc. | Microelectromechanical force sensor having a strain transfer layer arranged on the sensor die |
| US11423686B2 (en) | 2017-07-25 | 2022-08-23 | Qorvo Us, Inc. | Integrated fingerprint and force sensor |
| US11243126B2 (en) | 2017-07-27 | 2022-02-08 | Nextinput, Inc. | Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture |
| US11609131B2 (en) | 2017-07-27 | 2023-03-21 | Qorvo Us, Inc. | Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture |
| US11946816B2 (en) | 2017-07-27 | 2024-04-02 | Nextinput, Inc. | Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture |
| US11898918B2 (en) | 2017-10-17 | 2024-02-13 | Nextinput, Inc. | Temperature coefficient of offset compensation for force sensor and strain gauge |
| US11579028B2 (en) | 2017-10-17 | 2023-02-14 | Nextinput, Inc. | Temperature coefficient of offset compensation for force sensor and strain gauge |
| US12203819B2 (en) | 2017-10-17 | 2025-01-21 | Nextinput, Inc. | Temperature coefficient of offset compensation for force sensor and strain gauge |
| US11874185B2 (en) | 2017-11-16 | 2024-01-16 | Nextinput, Inc. | Force attenuator for force sensor |
| WO2025229509A1 (en) * | 2024-05-02 | 2025-11-06 | Politecnico Di Torino | Load-cell device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2011065250A1 (en) | 2013-04-11 |
| CN102510998A (en) | 2012-06-20 |
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