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WO2010111969A1 - 一种光刻机双台交换系统 - Google Patents

一种光刻机双台交换系统 Download PDF

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Publication number
WO2010111969A1
WO2010111969A1 PCT/CN2010/071540 CN2010071540W WO2010111969A1 WO 2010111969 A1 WO2010111969 A1 WO 2010111969A1 CN 2010071540 W CN2010071540 W CN 2010071540W WO 2010111969 A1 WO2010111969 A1 WO 2010111969A1
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Prior art keywords
degree
stage
freedom
micro
motion
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English (en)
French (fr)
Inventor
朱煜
张鸣
汪劲松
田丽
徐登峰
尹文生
段广洪
胡金春
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Tsinghua University
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Tsinghua University
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Priority to US13/262,783 priority Critical patent/US8836918B2/en
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    • H10P72/57—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving

Definitions

  • the invention relates to a lithography machine wafer table double-station exchange system, which is applied to a semiconductor lithography machine and belongs to the technical field of semiconductor manufacturing equipment.
  • the exposure design (lithography) of the chip design pattern on the photoresist on the surface of the silicon wafer is one of the most important processes.
  • the device used in this process is called a photolithography machine. machine).
  • the resolution and exposure efficiency of the lithography machine greatly affect the feature line width (resolution) and productivity of the integrated circuit chip.
  • Step-and-scan projection lithography machine The basic principle of the step-and-scan projection lithography machine is shown in Figure 1. Deep ultraviolet light from source 45 passes through reticle 47, lens system 49 A portion of the pattern on the reticle is imaged on a certain chip of the silicon wafer 50. The reticle and the silicon wafer are synchronously moved at a certain speed ratio, and finally all the patterns on the reticle are imaged on a specific chip of the silicon wafer ( Chip).
  • the basic function of the wafer stage motion positioning system is to carry the silicon wafer during the exposure process and move at a set speed and direction to achieve accurate transfer of the mask pattern to various areas on the silicon wafer. Because the line width of the chip is very small (the minimum line width has been reached so far) 45nm In order to ensure the lithography precision and resolution, the wafer stage is required to have extremely high motion positioning accuracy; since the movement speed of the wafer stage greatly affects the productivity of lithography, from the improvement of productivity The angle also requires the movement speed of the wafer table to continue to increase.
  • Patent W098/40791 Public date: 1998.9.17 ; Country: Netherlands
  • the structure described is a double-wafer stage structure that transfers the exposure preparation of the upper and lower sheets, pre-alignment, alignment, etc. to the second wafer stage, and simultaneously moves independently with the exposed wafer stage.
  • a large amount of preparation work for the exposed silicon wafer stage is shared by the second silicon wafer stage, thereby greatly shortening the working time of each silicon wafer on the exposed silicon wafer stage, and greatly improving Production efficiency.
  • the main drawback of this system is the non-centroidal drive problem of the wafer stage system.
  • the object of the present invention is to provide a new lithography machine wafer table double-station exchange system, which overcomes the complicated structure and the extremely high processing and processing of the existing silicon wafer table double-exchange system.
  • the shortcomings such as assembly precision have the advantages of simple structure, high space utilization, and collision between the linear guides of the double-degree-of-freedom driving unit during the exchange, thereby improving the exposure efficiency of the lithography machine.
  • a lithography machine wafer table double exchange system comprising a first wafer stage 10 running at an exposure station 6 and a second wafer stage 12 running at a pretreatment station 7, each wafer stage They are respectively carried by a six-degree-of-freedom micro-motion stage, and the silicon wafer stage and the six-degree-of-freedom micro-motion stage constitute a silicon wafer stage group, and the six-degree-of-freedom micro-motion stage is driven by a Lorentz motor, and the two silicon wafer stage sets are arranged.
  • the long side is the X direction and the short side is the Y direction
  • the X-direction first double-degree-of-freedom driving unit 21a and the X-direction second double degree of freedom are respectively disposed on the two long sides of the base 1
  • the driving unit 21b is provided with a first two-degree-of-freedom driving unit 22a in the Y direction and a second two-degree-of-freedom driving unit 22b in the Y direction, and the two-degree-of-freedom driving unit is driven by the upper linear motor and the lower linear motor.
  • the six-degree-of-freedom micro-motion stage of each silicon wafer set has two upper and lower layers of drivers, the upper layer is a horizontal direction driver, the lower layer is a vertical direction driver, and the upper layer driver realizes the X-direction, the Y-direction and the rotation around the Z-axis, and the lower layer
  • the drive implements the Z direction, rotates around the X axis, and wraps around Y Rotational motion
  • the six-degree-of-freedom micro-motion stage base 62 is fixed to the push rod 35 of the X-direction first two-degree-of-freedom drive unit 21a, and the stator coil 63 of the six-degree-of-freedom micro-motion stage upper-layer driver and the first two-degree-of-freedom in the Y direction
  • the push rod 35 of the driving unit 22a is fixed;
  • the exchange process of the dual silicon wafer stage of the system in the exchange, first, the stator coils 63 of the upper layer driver of the two-wafer stage group six-degree-of-freedom micro-motion stage are completely separated from the corresponding upper-layer driver mover magnets 64, respectively.
  • the stator coils 63 of the upper stage driver of the micro-motion stage are not exchanged, the two wafer stages exchange stations, and then the stator coils 63 of the upper-level driver of the six-degree-of-freedom micro-motion stage located at the exposure station are inserted into the six-degree-of-freedom operation to the exposure station.
  • stator coil 63 of the upper-level driver of the six-degree-of-freedom micro-motion stage located in the pre-processing station is inserted into the upper-layer driver of the six-degree-of-freedom micro-motion stage of the micro-motion stage. Within the gap of steel 64, then enter the next working cycle.
  • the invention relates to a lithography machine wafer table double exchange system, characterized in that: the upper drive of the six-degree-of-freedom micro-motion stage uses at least three Lorentz motors; the lower-layer drive uses at least three Lorentz motors.
  • a lithography machine wafer table double-station exchange system characterized in that: the upper-layer driver of the six-degree-of-freedom micro-motion stage is used Four Lorentz motors, the lower drive of the six-degree-of-freedom micro-motion stage use four Lorentz motors.
  • a lithography machine silicon wafer table double exchange system characterized in that: the moving magnets of the upper and lower layers of the six-degree-of-freedom micro-motion stage are fixed on the same skeleton and suspended in the silicon wafer stage; When the micro-motion stage stops working, the mover magnet 66 suspended by the lower stage drive of the fine-motion stage falls on the mechanical zero position 67.
  • a lithography machine silicon wafer table double exchange system characterized in that: the position feedback of the double-degree-of-freedom driving unit is respectively installed on the guide rail of the linear motor and the guide rail of the lower linear motor of the double-degree-of-freedom driving unit Linear grating.
  • the invention relates to a lithography machine wafer stage double-station exchange system, characterized in that: the lithography machine silicon wafer stage double-station exchange system further comprises a dual-frequency laser interferometer for the silicon wafer stage motion position feedback.
  • the invention has the following outstanding advantages: First, the magnetic steel and the coil of the double-layer driving unit of the silicon wafer stage six-degree-of-freedom micro-motion stage of the system are respectively separated from the silicon wafer stage and the push rod Fixed, thus avoiding the extremely high precision requirements of assembly. Second, the air gap between the moving and stator of the horizontal electromagnetic drive unit is large, no collision occurs when the two units are exchanged, and the installation accuracy requirements of the system components are reduced.
  • Figure 1 is a schematic diagram of the working principle of the lithography machine.
  • FIG. 2 is a state diagram of a wafer stage dual-disc exchange system of a lithography machine according to the present invention and a state before exchange thereof.
  • Figure 3 shows the wafer stage and the six-degree-of-freedom micro-motion stage structure.
  • Figure 4 shows the connection between the double-layer drive structure of the six-degree-of-freedom micro-motion stage of the silicon wafer stage and the two-degree-of-freedom drive unit.
  • Fig. 5 is a stator structure of a vertical driving unit of a lower level of a six-degree-of-freedom micro-motion stage of a silicon wafer stage.
  • Figure 6 shows the state in which the two wafer stages are moved to the exchange position before the exchange.
  • FIGS 7 and 8 show the state of the two wafer stages in the exchange position during the exchange.
  • FIG. 9 shows the state after the system has completed the exchange.
  • FIG. 2 is a schematic view showing the structure of a two-stage exchange system of a wafer wafer stage of a lithography machine.
  • the system includes a base 1 having a long side in the X direction and a short side in the Y direction, and a first silicon running on the exposure station 6.
  • Two wafer stages are located in the space enclosed by the four double-degree-of-freedom drive units and suspended by the air bearing on the upper surface of the abutment.
  • the push rod of the first two-degree-of-freedom driving unit 21a in the X direction is consolidated with the wafer stage six-degree-of-freedom micro-motion stage base 62, and the six-degree-of-freedom of the push rod and the wafer stage of the first two-degree-of-freedom driving unit 22a in the Y direction is micro
  • the upper stage driver stator coil 63 is consolidated.
  • the push rod of the second double-degree-of-freedom driving unit 21b in the X direction is consolidated with the wafer stage six-degree-of-freedom micro-motion stage base 62, and the push-pull and wafer stage six of the Y-direction second two-degree-of-freedom driving unit 22b
  • the degree of freedom micro-motion stage upper driver stator coil 63 is consolidated.
  • Figures 3 and 4 show the connection between the wafer stage and the six-degree-of-freedom micro-motion stage and the two-degree-of-freedom drive unit.
  • the silicon wafer six-degree-of-freedom micro-motion stage has two upper and lower layers of drivers, and the six-degree-of-freedom micro-motion of the silicon wafer can be realized by eight Lorentz motors.
  • the Lorentz motor consists of magnetic steel and coils.
  • the upper horizontal driving unit realizes the movement in the X direction, the Y direction and the Z axis direction, and applies a push, pull or twist effect to the wafer stage by controlling four Lorentz motors;
  • the lower vertical driving unit realizes the X axis Direction, movement in the Y-axis direction and Z-direction, the wafer stage is raised, lowered or twisted by controlling the force of the four Lorentz motors.
  • the push rod of the first two-degree-of-freedom driving unit 21a in the X direction is consolidated with the wafer stage six-degree-of-freedom micro-motion stage base 62, and the upper and lower linear motors of the first two-degree-of-freedom driving unit 21a in the X direction drive the first wafer stage 10 Movement in the X and Y directions, the push rod of the first two-degree-of-freedom drive unit 22a in the Y direction is consolidated with the wafer stage six-degree-of-freedom micro-motion stage upper-layer driver stator coil 63 to drive the wafer stage six-degree-of-freedom micro-motion stage
  • the horizontal direction is slightly moved, and cooperates with the movement of the first double-degree-of-freedom driving unit 21a on the upper surface of the base in the X direction.
  • the push rod of the second double-degree-of-freedom driving unit 21b in the X direction is consolidated with the wafer stage six-degree-of-freedom micro-motion stage base 62, and the upper and lower linear motors of the second two-degree-of-freedom driving unit 21b in the X direction drive the second silicon.
  • the movement of the stage 12 in the X and Y directions, the push rod of the X-direction second double-degree-of-freedom driving unit 22b and the wafer stage six-degree-of-freedom micro-motion stage upper-layer driver stator coil 63 are fixed to drive the wafer stage six degrees of freedom micro
  • the horizontal direction of the moving table is slightly moved, and cooperates with the movement of the second double-degree-of-freedom driving unit 21b in the X direction on the upper surface of the base.
  • Fig. 5 is a stator structure of a lower-direction vertical driving unit of a silicon wafer stage six-degree-of-freedom micro-motion stage.
  • the silicon wafer six-degree-of-freedom micro-motion stage has two upper and lower layers of drivers.
  • the moving magnets of the upper and lower layers of the driver are fixed on the same part and suspended in the wafer stage.
  • the stator coil holder of the upper driver is double free in a Y direction.
  • the push rod connection of the degree driving unit, the stator coil of the lower layer driver is fixed on the wafer stage base 62, and when the two wafer stages are exchanged, the wafer stage six-degree-of-freedom micro-motion stage upper layer driver stator coil 63 is completely withdrawn
  • the upper drive mover 64, while the stator 65 of the lower drive also ceases to function, and the suspended magnetic mover 66 falls on the mechanical zero 67.
  • FIG. 6 The process of the system completing the two-slice exchange of the silicon wafer is as shown in FIG. 6, FIG. 7, FIG. 8 and FIG.
  • the position of the wafer stage is taken as the starting position, and the Y-direction first double-degree-of-freedom driving unit 22a is connected to the wafer stage six-degree-of-freedom micro-motion stage upper layer driver stator coil 63.
  • the upper linear guide in the X-direction first double-degree-of-freedom driving unit 21a is fixed to the micro-motion base pedestal 62 of the wafer stage 10, thereby driving the wafer stage 10 to perform an exposure movement at the exposure station 6, and at the same time,
  • the Y-direction second double-degree-of-freedom driving unit 22b is connected to the wafer stage six-degree-of-freedom micro-motion stage upper-layer driver stator coil 63, and the upper linear guide and the wafer stage 12 in the second-direction two-degree-of-freedom driving unit 21b in the X direction
  • the stage base 62 is consolidated to drive the wafer stage 12 for pre-treatment movement at the pretreatment station 7.
  • the system After each of the wafer stages has completed the pre-treatment and exposure processes, the system enters a dual-segment exchange state, as shown in Figures 8, 9, and 10.
  • the wafer stage 10 is driven by the X-direction first double-degree-of-freedom driving unit 21a to move toward the exposure station by the lower linear guide 30, and the Y-direction first double-degree-of-freedom driving unit 22a is stationary, with the first double freedom in the X direction.
  • the movement of the degree drive unit 21a is withdrawn from the wafer stage 10 by the upper stage mover coil of the wafer stage six-degree-of-freedom micro-motion stage consolidated with the push rod of the first two-degree-of-freedom drive unit 22a in the Y direction.
  • the other wafer stage 12 is driven by the second double-degree-of-freedom driving unit 21b in the X direction to move toward the exposure station by the lower linear guide 30, and the second double-degree-of-freedom driving unit 22b in the Y direction is stationary, with the second double free in the X direction.
  • the movement of the degree driving unit 21b is withdrawn from the wafer stage 12 by the upper stage mover coil of the wafer stage six-degree-of-freedom micro-motion stage consolidated with the push rod of the second two-degree-of-freedom drive unit 22b in the Y direction.
  • the Y-direction first double-degree-of-freedom driving unit 22a starts to move rightward in the Y direction
  • the Y-direction second double-degree-of-freedom driving unit 22b proceeds in the Y direction.
  • the two X-direction dual-degree-of-freedom driving units respectively drive the two wafer stages 10 and 12 to continue moving in the X direction until the two moving coils are respectively inserted into position, thereby completing the position exchange of the two wafer stages, and the system enters the next cycle.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Description

[根据细则37.2由ISA制定的发明名称]一种光刻机双台交换系统 技术领域
本发明涉及一种光刻机硅片台双台交换系统，该系统应用于半导体光刻机中，属于半导体制造设备技术领域。
背景技术
在集成电路芯片的生产过程中，芯片的设计图形在硅片表面光刻胶上的曝光转印（光刻）是其中最重要的工序之一，该工序所用的设备称为光刻机（曝光机）。光刻机的分辨率和曝光效率极大的影响着集成电路芯片的特征线宽（分辨率）和生产率。而作为光刻机关键系统的硅片超精密运动定位系统（以下简称为硅片台）的运动精度和工作效率，又在很大程度上决定了光刻机的分辨率和曝光效率。
步进扫描投影光刻机基本原理如图 1 所示。来自光源 45 的深紫外光透过掩模版 47 、透镜系统 49 将掩模版上的一部分图形成像在硅片 50 的某个 Chip 上。掩模版和硅片反向按一定的速度比例作同步运动，最终将掩模版上的全部图形成像在硅片的特定芯片（ Chip ）上。
硅片台运动定位系统的基本作用就是在曝光过程中承载着硅片并按设定的速度和方向运动，以实现掩模版图形向硅片上各区域的精确转移。由于芯片的线宽非常小（目前最小线宽已经达到 45nm ），为保证光刻的套刻精度和分辨率，就要求硅片台具有极高的运动定位精度；由于硅片台的运动速度在很大程度上影响着光刻的生产率，从提高生产率的角度，又要求硅片台的运动速度不断提高。
传统的硅片台，如专利 EP 0729073 和专利 US 5996437 所描述的，光刻机中只有一个硅片运动定位单元，即一个硅片台。调平调焦等准备工作都要在上面完成，这些工作所需的时间很长，特别是对准，由于要求进行精度极高的低速扫描（典型的对准扫描速度为 1 mm /s ），因此所需时间很长。而要减少其工作时间却非常困难。这样，为了提高光刻机的生产效率，就必须不断提高硅片台的步进和曝光扫描的运动速度。而速度的提高将不可避免导致系统动态性能的恶化，需要采取大量的技术措施保障和提高硅片台的运动精度，为保持现有精度或达到更高精度要付出的代价将大大提高。
专利 W098/40791 （公开日期： 1998.9.17 ；国别：荷兰）所描述的结构采用双硅片台结构，将上下片、预对准、对准等曝光准备工作转移至第二个硅片台上，且与曝光硅片台同时独立运动。在不提高硅片台运动速度的前提下，曝光硅片台大量的准备工作由第二个硅片台分担，从而大大缩短了每片硅片在曝光硅片台上的工作时间，大幅度提高了生产效率。然而该系统存在的主要缺点在于硅片台系统的非质心驱动问题。
本申请人在 2007 年申请的发明专利'一种光刻机硅片台双台交换系统 '（公 开 号： CN101101454 ）公开了一种光刻机的双台交换系统，其具有结构简单，空间利用率高等优点，进而提高光刻机的曝光效率。但是该双硅片台系统也存在一些问题，一是由于多处采用气浮轴承结构，对于零部件的加工和装配的精度都要求微米级以上；二是硅片台的外型尺寸一致性要求高； 三是参与交换的导轨之间很难安装用于检测相互位置的传感器，上直线导轨之间可能发生碰撞。
 技术问题
针对现有技术的不足和缺陷，本发明的目的是提供一种新的光刻机硅片台双台交换系统，以克服已有硅片台双台交换系统结构复杂以及要求极高的加工和装配精度等缺点，使其具有结构简单，空间利用率高以及交换时不会发生双自由度驱动单元的上直线导轨之间发生碰撞等优点，进而提高光刻机的曝光效率。
 技术解决方案
本发明的技术方案如下：
一种光刻机硅片台双台交换系统，该系统含有运行于曝光工位6的第一硅片台10和运行于预处理工位7的第二硅片台12，每个硅片台分别由一个六自由度微动台承载，硅片台和六自由度微动台构成一个硅片台组，六自由度微动台采用洛伦兹电机驱动，所述的两个硅片台设置在一长方形基台上表面2，设长边为X方向，短边为Y方向，在基台1两长边分别设有X方向第一双自由度驱动单元21a和X方向第二双自由度驱动单元21b，两短边分别设有Y方向第一双自由度驱动单元22a和Y方向第二双自由度驱动单元22b，双自由度驱动单元由上直线电机和下直线电机进行驱动，其特征在于：每个硅片台组的六自由度微动台有上下两层驱动器，上层为水平方向驱动器，下层为垂直方向驱动器，上层驱动器实现X方向、Y方向和绕Z轴旋转的运动，下层驱动器实现Z方向、绕X轴旋转和绕Y轴旋转的运动；六自由度微动台基座62与X方向第一双自由度驱动单元21a的推杆35固定，六自由度微动台上层驱动器的定子线圈63与Y方向第一双自由度驱动单元22a的推杆35固定；
该系统双硅片台的交换过程：在交换时，首先，两硅片台组六自由度微动台上层驱动器的定子线圈63分别与对应的上层驱动器动子磁钢64完全分离，两六自由度微动台上层驱动器的定子线圈63不交换，两硅片台交换工位，然后，位于曝光工位的六自由度微动台上层驱动器的定子线圈63插入运行至曝光工位的六自由度微动台上层驱动器动子磁钢64间隙内，位于预处理工位的六自由度微动台上层驱动器的定子线圈63插入运行至预处理工位的六自由度微动台上层驱动器动子磁钢64间隙内，之后进入下一工作循环。
一种光刻机硅片台双台交换系统，其特征在于：所述的六自由度微动台的上层驱动器使用至少3个洛伦兹电机；下层驱动器至少使用3个洛伦兹电机 。
一种光刻机硅片台双台交换系统，其特征在于：所述的六自由度微动台的上层驱动器使用 4个洛伦兹电机，六自由度微动台的下层驱动器使用4个洛伦兹电机。
一种光刻机硅片台双台交换系统，其特征在于：六自由度微动台的上下两层驱动器的动子磁钢均固定在同一个骨架上并悬浮在硅片台中；当六自由度微动台停止工作时，微动台下层驱动器悬浮的动子磁钢66落在机械零位67上。
一种光刻机硅片台双台交换系统，其特征在于：在所述的双自由度驱动单元的上直线电机的导轨和下直线电机的导轨上分别安装有用作双自由度驱动单元位置反馈的线性光栅。
一种光刻机硅片台双台交换系统，其特征在于：所述的光刻机硅片台双台交换系统还包含用于硅片台运动位置反馈的双频激光干涉仪。
 有益效果
本发明与现有技术相比，具有以下突出性的优点：一是该系统的硅片台六自由度微动台的双层驱动单元的磁钢和线圈与硅片台和推杆之间分别固定，因此避免了装配时的极高精度要求。二是水平方向电磁驱动单元的动、定子之间气隙大，双台交换时不会发生碰撞，并且降低了系统零部件的安装精度要求。
 附图说明
图1为光刻机的工作原理示意图。
图2为本发明提供的光刻机硅片台双台交换系统及其交换前的状态图。
图3显示了硅片台和六自由度微动台结构。
图4硅片台组六自由度微动台的双层驱动结构与双自由度驱动单元之间的联接方式。
图5硅片台组六自由度微动台下层垂直方向驱动单元的定子结构。
图6显示了交换前两个硅片台运动到交换位置的状态。
图7、8显示了交换时两个硅片台在交换位置的状态。
图9显示了系统完成交换后的状态。
图中：
1—基台；2—基台上表面；5－直线电机；6—曝光工位；7—预处理工位；10—第一硅片台；12—第二硅片台；21a—X方向第一双自由度驱动单元；21b—X方向第二双自由度驱动单元；22a—Y方向第一双自由度驱动单元；22b—Y方向第二双自由度驱动单元；35－推杆；45—光源；47—掩模版；49—透镜系统；50—硅片；62—微动台基座；63—微动台上层驱动器定子线圈；64—微动台上层驱动器动子磁钢；65—微动台下层驱动器定子线圈；66—微动台下层驱动器动子磁钢；67—机械零位。
 本发明的最佳实施方式
本发明的实施方式
图2显示了光刻机硅片台双台交换系统的结构示意图，该系统含有基台1，基台长边为X方向，短边为Y方向，有运行于曝光工位6的第一硅片台10，运行于预处理工位7的第二硅片台12，以及设置在基台边缘的4个沿X向和Y向运动的双自由度驱动单元。两个硅片台位于4个双自由度驱动单元围成的空间内，并通过气浮轴承悬浮在基台上表面。X方向第一双自由度驱动单元21a的推杆与硅片台六自由度微动台基座62固结，Y方向第一双自由度驱动单元22a的推杆与硅片台六自由度微动台上层驱动器定子线圈63固结。相同的，X方向第二双自由度驱动单元21b的推杆与硅片台六自由度微动台基座62固结，Y方向第二双自由度驱动单元22b的推杆与硅片台六自由度微动台上层驱动器定子线圈63固结。
图3、图4显示了硅片台和六自由度微动台与双自由度驱动单元之间的联接方式。硅片台六自由度微动台有上下两层驱动器，通过8个洛伦兹电机可实现硅片台六自由度微动。洛伦兹电机由磁钢和线圈组成。上层的水平方向驱动单元实现X方向、Y方向和绕Z轴方向的运动，通过控制四个洛伦兹电机对硅片台施加推、拉或扭转作用；下层的垂直方向驱动单元实现绕X轴方向、绕Y轴方向和Z方向的运动，通过控制四个洛伦兹电机的作用力使硅片台升、降或扭转。
X方向第一双自由度驱动单元21a的推杆与硅片台六自由度微动台基座62固结，X方向第一双自由度驱动单元21a的上下直线电机驱动第一硅片台10沿X和Y方向的运动，Y方向第一双自由度驱动单元22a的推杆与硅片台六自由度微动台上层驱动器定子线圈63固结来驱动硅片台六自由度微动台的水平方向微动，并配合X方向第一双自由度驱动单元21a在基台上表面的运动。相同的，X方向第二双自由度驱动单元21b的推杆与硅片台六自由度微动台基座62固结，X方向第二双自由度驱动单元21b的上下直线电机驱动第二硅片台12沿X和Y方向的运动，X方向第二双自由度驱动单元22b的推杆与硅片台六自由度微动台上层驱动器定子线圈63固结来驱动硅片台六自由度微动台的水平方向微动，并配合X方向第二双自由度驱动单元21b在基台上表面的运动。
图5为硅片台六自由度微动台下层垂直方向驱动单元的定子结构。硅片台六自由度微动台有上下两层驱动器，上下两层驱动器的动子磁钢均固定在同一个零件上并悬浮在硅片台中，上层驱动器的定子线圈座与一个Y方向双自由度驱动单元的推杆连接，下层驱动器的定子线圈固定在硅片台基座62上，当两个硅片台进行交换时，硅片台六自由度微动台上层驱动器定子线圈63完全撤出上层驱动器动子64，与此同时下层驱动器的定子65也停止工作，悬浮的磁钢动子66落在机械零位67上。
系统完成硅片台双台交换的过程如图6、图7、图8和图9所示。硅片台10和12交换以前，如图6所示硅片台所处位置作为起始位置，Y方向第一双自由度驱动单元22a与硅片台六自由度微动台上层驱动器定子线圈63连接，X方向第一双自由度驱动单元21a中的上直线导轨与硅片台10的微动台基座62固结，从而驱动硅片台10在曝光工位6作曝光运动，与此同时，Y方向第二双自由度驱动单元22b与硅片台六自由度微动台上层驱动器定子线圈63连接，X方向第二双自由度驱动单元21b中的上直线导轨与硅片台12的微动台基座62固结，以此驱动硅片台12在预处理工位7作预处理运动。
在硅片台各自完成预处理和曝光工序后，系统进入双台交换状态，如图8、图9和图10所示。此时硅片台10由X方向第一双自由度驱动单元21a通过下直线导轨30驱动向曝光工位方向运动，Y方向第一双自由度驱动单元22a静止，随着X方向第一双自由度驱动单元21a的移动，与Y方向第一双自由度驱动单元22a的推杆固结的硅片台六自由度微动台上层动子线圈撤出硅片台10。另外一个硅片台12由X方向第二双自由度驱动单元21b通过下直线导轨30驱动向曝光工位方向运动，Y方向第二双自由度驱动单元22b静止，随着X方向第二双自由度驱动单元21b的移动，与Y方向第二双自由度驱动单元22b的推杆固结的硅片台六自由度微动台上层动子线圈撤出硅片台12。
当两硅片台分别沿X方向运动至图中所示位置时，Y方向第一双自由度驱动单元22a开始沿Y方向向右移动，Y方向第二双自由度驱动单元22b沿Y方向向左移动，直到分别与两硅片台六自由度微动台的上层定子间隙对齐到可以刚好插入为止。两个X方向双自由度驱动单元分别驱动两硅片台10和12沿X方向继续移动直至两动子线圈分别插入到位，至此完成了两硅片台的位置交换，系统进入下一个循环。
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Claims (1)

  1. 1．一种光刻机硅片台双台交换系统，该系统含有运行于曝光工位（6）的第一硅片台（10）和运行于预处理工位（7）的第二硅片台（12），每个硅片台分别由一个六自由度微动台承载，硅片台和六自由度微动台构成一个硅片台组，六自由度微动台采用洛伦兹电机驱动，所述的两个硅片台设置在一长方形基台上表面（2），设长边为X方向，短边为Y方向，在基台（1）两长边分别设有X方向第一双自由度驱动单元（21a）和X方向第二双自由度驱动单元（21b），两短边分别设有Y方向第一双自由度驱动单元（22a）和Y方向第二双自由度驱动单元（22b），双自由度驱动单元由上直线电机和下直线电机进行驱动，其特征在于：每个硅片台组的六自由度微动台有上下两层驱动器，上层为水平方向驱动器，下层为垂直方向驱动器，上层驱动器实现X方向、Y方向和绕Z轴旋转的运动，下层驱动器实现Z方向、绕X轴旋转和绕Y轴旋转的运动；六自由度微动台基座（62）与X方向第一双自由度驱动单元（21a）的推杆（35）固定，六自由度微动台上层驱动器的定子线圈（63）与Y方向第一双自由度驱动单元（22a）的推杆（35）固定；
    该系统双硅片台的交换过程：在交换时，首先，两硅片台组六自由度微动台上层驱动器的定子线圈（63）分别与对应的上层驱动器动子磁钢（64）完全分离，两六自由度微动台上层驱动器的定子线圈（63）不交换，两硅片台交换工位，然后，位于曝光工位的六自由度微动台上层驱动器的定子线圈（63）插入运行至曝光工位的六自由度微动台上层驱动器动子磁钢（64）间隙内，位于预处理工位的六自由度微动台上层驱动器的定子线圈（63）插入运行至预处理工位的六自由度微动台上层驱动器动子磁钢（64）间隙内，之后进入下一工作循环。
    2．按照权利要求1所述的一种光刻机硅片台双台交换系统，其特征在于：所述的六自由度微动台的上层驱动器使用至少3个洛伦兹电机；下层驱动器至少使用3个洛伦兹电机 。
    3．按照权利要求2所述的一种光刻机硅片台双台交换系统，其特征在于：所述的六自由度微动台的上层驱动器使用 4个洛伦兹电机，六自由度微动台的下层驱动器使用4个洛伦兹电机。
    4．按照权利要求1所述的一种光刻机硅片台双台交换系统，其特征在于：六自由度微动台的上下两层驱动器的动子磁钢均固定在同一个骨架上并悬浮在硅片台中；当六自由度微动台停止工作时，微动台下层驱动器悬浮的动子磁钢（66）落在机械零位（67）上。
    5．按照权利要求1所述的一种光刻机硅片台双台交换系统，其特征在于：在所述的双自由度驱动单元的上直线电机的导轨和下直线电机的导轨上分别安装有用作双自由度驱动单元位置反馈的线性光栅。
    6．按照权利要求1所述的一种光刻机硅片台双台交换系统，其特征在于：所述的光刻机硅片台双台交换系统还包含用于硅片台运动位置反馈的双频激光干涉仪。
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