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WO2010150830A1 - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
WO2010150830A1
WO2010150830A1 PCT/JP2010/060685 JP2010060685W WO2010150830A1 WO 2010150830 A1 WO2010150830 A1 WO 2010150830A1 JP 2010060685 W JP2010060685 W JP 2010060685W WO 2010150830 A1 WO2010150830 A1 WO 2010150830A1
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WO
WIPO (PCT)
Prior art keywords
light
layer
emitting device
ceramic layer
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2010/060685
Other languages
French (fr)
Japanese (ja)
Inventor
勝寿 中山
利久 岡田
康子 大崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to CN2010800278271A priority Critical patent/CN102804427A/en
Priority to JP2011519926A priority patent/JPWO2010150830A1/en
Priority to EP10792148A priority patent/EP2448025A1/en
Publication of WO2010150830A1 publication Critical patent/WO2010150830A1/en
Priority to US13/331,235 priority patent/US20120146494A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8582Means for heat extraction or cooling characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8585Means for heat extraction or cooling being an interconnection
    • H10W72/5522
    • H10W74/00
    • H10W90/754
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322Composite web or sheet
    • Y10T428/24331Composite web or sheet including nonapertured component

Definitions

  • the present invention is a light emitting diode (hereinafter sometimes referred to as LED) device, a high brightness photodiode backlight, a light source associated with a display, an automotive lighting, decorative lighting, signage, advertising lighting, and lighting device including information display applications.
  • the present invention relates to a light-emitting device in forming the substrate and a mounting substrate used therefor.
  • a method of realizing white light emission with an LED lamp a method of using three LED chips that emit light of each color of blue, green and red, a method of combining a blue light emitting LED chip and a yellow or orange light emitting phosphor, Examples include a method of combining a blue light emitting LED and a phosphor that excites red and green by the light, a method of combining an ultraviolet light emitting LED chip and a three-color mixed phosphor of blue, green, and red light emission.
  • a bullet-type structure in which a transparent resin such as an epoxy resin or a silicone resin mixed with a phosphor is poured and solidified to form a resin layer containing the phosphor is known. Yes. Also known is a structure in which an LED chip is mounted on a substrate having a wiring pattern formed on the main surface, and a sealing portion made of a transparent resin is formed on the substrate.
  • a light reflecting layer such as silver is formed on a substrate around the mounted LED chip. And by this light reflection layer, the light emission from the LED chip radiated to the substrate side and the fluorescence excited and emitted from the phosphor are reflected forward to improve the light extraction efficiency.
  • the present inventor tried a method of coating the silver conductor layer on the surface of the substrate with a glass film (Japanese Patent Application No. 2008-212591).
  • Japanese Patent Application No. 2008-212591 Japanese Patent Application No. 2008-212591
  • the voltage applied to the LED is lowered, the luminous efficiency is lowered, and the LED life is shortened.
  • An object of the present invention is to provide a light-emitting device that has high light reflectivity, little reduction in reflectivity due to corrosion, and improved light extraction efficiency. Another object of the present invention is to suppress the process load as much as possible in the formation of such a light reflecting layer.
  • the invention corresponding to claim 1 includes a ceramic substrate having a hole so as to expose a part of the light reflecting conductor layer, and incorporating the light reflecting conductor layer,
  • the thickness of the upper ceramic layer between the light emitting element arranging surface and the light reflecting conductor layer is 5 ⁇ 100 ⁇ m.
  • a second aspect of the present invention there is provided a lower ceramic layer, a light reflecting conductor layer formed in a desired region of the lower ceramic layer surface, and an upper ceramic layer formed to cover at least a partial region of the light reflecting conductor layer.
  • a light emitting device disposed above the upper ceramic layer of the ceramic substrate, wherein the upper ceramic layer has a thickness of 5 to 100 ⁇ m.
  • the invention corresponding to claim 3 is the light emitting device according to claim 2, wherein an external electrode terminal is formed on the surface of the lower ceramic layer of the ceramic substrate opposite to the light emitting element, and the external electrode The terminal and the light reflecting conductor layer are electrically connected through a via conductor formed so as to penetrate the lower ceramic layer.
  • the invention corresponding to claim 4 is the light emitting device according to any one of claims 1 to 3, wherein the light emitting device is formed so as to include the light emitting element, and is excited by light emitted from the light emitting element. It has a sealing resin layer containing a phosphor that emits visible light.
  • the invention corresponding to claim 5 is the light emitting device according to any one of claims 1 to 4, wherein the upper ceramic layer is white.
  • the invention corresponding to claim 6 is the light emitting device according to any one of claims 1 to 5, wherein the upper ceramic layer is 40% to 60% glass component and 40% to 60% ceramic filler in mass%. It was composed of glass-ceramics containing the components.
  • the invention corresponding to claim 7 is the light emitting device of the invention corresponding to claim 6, wherein the ceramic filler component is alumina.
  • the invention corresponding to claim 8 is the light emitting device according to claim 6 or 7, wherein the glass component contains 62 to 85% of SiO 2 and 5 to 2 of B 2 O 3 in terms of mol% based on oxide. 25%, Al 2 O 3 0 to 5%, Na 2 O and one or more of K 2 O in total 0 to 5%, and the total content of SiO 2 and Al 2 O 3 is When at least one selected from the group consisting of 62 to 85%, MgO, CaO, SrO and BaO is contained, the total content is 10% or less.
  • the invention corresponding to claim 9 is the light emitting device of the invention corresponding to any one of claims 6 to 8, wherein the glass component is expressed by mol% on the basis of oxide, SiO 2 is 78 to 82%, B 2 O. 3 to 16 to 18%, and at least one of Na 2 O and K 2 O is contained in a total amount of 0.9 to 4%.
  • the invention corresponding to claim 10 is the light emitting device according to any one of claims 1 to 9, wherein the upper ceramic layer is eluted when immersed in an oxalic acid solution having a pH of 1.68 at 85 ° C. for 1 hour. The amount was made of glass-ceramics of 100 ⁇ g / cm 2 or less.
  • the ceramic substrate for a light-emitting device of the present invention is a ceramic substrate for a light-emitting device having a light-reflecting conductor layer that reflects light from a light-emitting element, and a lower ceramic layer and a light-reflecting conductor positioned on the lower ceramic layer.
  • the upper ceramic layer located on the light reflecting conductor layer and the lower ceramic layer, and an opening was formed in the upper ceramic layer located on the light reflecting conductor layer.
  • the upper ceramic layer preferably has a thickness of 5 to 100 ⁇ m.
  • the hole in the invention corresponding to the first aspect means an opening formed in the upper ceramic layer so as to expose a part of the light-reflective conductor layer built in the ceramic substrate.
  • a light emitting element is disposed on the upper ceramic layer, and a bonding wire connected to the light emitting element in the hole is conducted through the light reflective conductor layer.
  • the present inventor has realized a light emitting device excellent in heat dissipation without reducing the reflectance by incorporating the light reflecting conductor layer in the ceramic substrate.
  • is used to mean that the numerical values described before and after the value are included as the lower limit value and the upper limit value unless otherwise specified.
  • the light reflecting conductor layer having a very high light reflectance is formed on the main surface of the substrate, so that the light from the light emitting element radiated to the substrate side is high in the opening direction on the side opposite to the substrate. It can be reflected with reflectivity. As a result, the light extraction efficiency can be improved, and the light emission efficiency can be improved.
  • the phosphor layer that emits visible light when excited by light from the light emitting element, and the visible light emitted from this phosphor layer is also high forward on the opposite side of the substrate by the light reflecting conductor layer. Since the light is reflected at the reflectance, it is possible to improve the extraction efficiency of white light due to color mixture of visible light emitted from the phosphor layer and light emitted from the light emitting element.
  • an upper ceramic layer made of glass-ceramics with little light absorption is provided on the light reflecting conductor layer, and the lower light reflecting conductor layer is chemically protected by this layer. Therefore, corrosion of the light reflecting conductor layer is prevented, and a decrease in light reflectance is suppressed.
  • the upper ceramic layer has a high thermal conductivity, and it is difficult to inhibit the heat dissipation of the LED chip, thereby preventing the light emission efficiency from being lowered and the life from being shortened.
  • sectional drawing of the ceramic substrate which incorporates the light reflection conductor layer used for this invention It is an example of sectional drawing of the light-emitting device of this invention. It is an example of sectional drawing of the light-emitting device of this invention which plated the conductor layer surface for light reflection.
  • the ceramic substrate 1 in the light emitting device of the present invention is formed of an upper ceramic layer 3, a light reflecting conductor layer 2, and a lower ceramic layer 10.
  • a light emitting element 6 is disposed on the upper ceramic layer 3.
  • An external electrode terminal 8 is formed on the surface of the ceramic substrate 1 opposite to the light emitting element 6 of the lower ceramic layer 10.
  • the external electrode terminal 8 and the light reflecting conductor layer 2 penetrate through the lower ceramic layer 10. It is conducted through the formed via conductor 4.
  • An opening hole 11 is formed in a desired portion of the upper ceramic layer 3, and a bonding wire 7 is connected to the opening hole 11, and the light emitting element 6 and the light reflecting conductor layer 2 are electrically connected via the bonding wire 7.
  • reference numeral 5 denotes a sealing resin layer that includes the light emitting element 6 and covers a desired region of the upper ceramic layer 3 and the light reflecting conductor layer 2.
  • a phosphor that emits visible light when excited by light emitted from the element is contained.
  • a gold plating layer 9 is formed on the surface of a desired region of the layer 2 to prevent characteristic deterioration due to discoloration of the light reflecting conductor layer 2.
  • the light reflecting conductor layer is a silver conductor that functions as a conductor and has excellent light reflectivity.
  • the light reflecting conductor layer may be referred to as a silver conductor layer.
  • the present invention will be described below with a representative example using such a silver conductor layer.
  • the light-emitting device of the present invention has a ceramic substrate (hereinafter sometimes referred to as a substrate of the present invention) containing a silver conductor layer on the substrate of the present invention so as to be electrically connected to the silver conductor layer. And a light emitting element arranged.
  • substrate of this invention is formed from the upper ceramic layer, the light reflection conductor layer, and the lower ceramic layer.
  • the substrate of the present invention is a flat member on which a light emitting element is mounted, and has a silver conductor layer for reflecting light traveling downward from the light emitting element, that is, light traveling in the direction of arrow A in FIGS. It is characterized by that.
  • the upper ceramic layer of the substrate of the present invention is a layer for protecting the silver conductor layer from corrosion and the like, and preferably contains a glass component and a ceramic filler component. Typically, it is a LTCC (Low Temperature Co-fired Ceramics) substrate (low temperature co-fired laminated ceramic substrate). Since the upper ceramic layer of the substrate of the present invention contains a glass component, the sealing performance is high and the internal silver conductor layer can be sufficiently protected. Moreover, since the ceramic filler component is contained, the thermal conductivity is high. Moreover, since the thickness is as thin as 100 ⁇ m or less, the light reflected by the silver conductor layer is hardly absorbed, and a high reflectance can be obtained.
  • LTCC Low Temperature Co-fired Ceramics
  • the material constituting the lower ceramic layer is not particularly limited as long as it is a ceramic on which a silver conductor or the like can be baked, but it may be the above-described LTCC substrate from the viewpoint of thermal conductivity, heat dissipation, strength, and cost. preferable.
  • LTCC is a ceramic that can be fired simultaneously with a silver conductor. If both the upper ceramic layer and the lower ceramic layer constituting the substrate of the present invention are LTCC, the upper ceramic layer, the lower ceramic layer, and the silver conductor layer are The integrated substrate of the present invention can be formed efficiently.
  • the light emitting element is an LED element, and includes a type that emits visible light by exciting a phosphor with emitted light.
  • a blue light emitting type LED chip and an ultraviolet light emitting type LED chip are exemplified.
  • the present invention is not limited to these, and various light-emitting elements can be used depending on the application of the light-emitting device, the intended emission color, and the like.
  • the mounting of the light emitting element is, for example, a method in which the LED chip is bonded to the substrate with an epoxy resin or a silicone resin (die bonding), and the electrode on the upper surface of the chip is connected to the pad portion of the ceramic substrate via a bonding wire such as a gold wire.
  • a bonding wire such as a gold wire.
  • bump electrodes such as solder bumps, Au bumps, and Au—Sn eutectic bumps provided on the back surface of the LED chip are flip-chip connected to the lead terminals and pad portions of the ceramic substrate.
  • the phosphor is excited by the light emitted from the light emitting element to emit visible light, and the visible light or the visible light itself emitted from the phosphor by color mixing of the visible light and the light emitted from the light emitting element.
  • a desired light emission color is obtained by mixing the colors.
  • the type of the phosphor is not particularly limited, and is appropriately selected according to the intended emission color, light emitted from the light emitting element, and the like.
  • the phosphor layer containing such a phosphor is formed by mixing and dispersing the phosphor in a transparent resin such as a silicone resin or an epoxy resin. The phosphor layer is formed so as to cover the outside of the light emitting element.
  • the lower ceramic layer of the substrate of the present invention is not particularly limited as long as it can be provided with a silver conductor layer and an upper ceramic layer (insulating layer) that protects the silver conductor layer.
  • an LTCC substrate will be described. To do.
  • the LTCC substrate is a substrate that can be manufactured by firing at the same time as the silver conductor layer.
  • the LTCC substrate is usually manufactured by baking glass powder and ceramic filler powder as a green sheet. That is, first, glass powder and alumina powder, resin such as polyvinyl butyral and acrylic resin, plasticizer such as dibutyl phthalate, dioctyl phthalate, butyl benzyl phthalate, solvent such as toluene, xylene, butanol, and dispersant Etc. are added to form a slurry, and this slurry is formed into a sheet by a doctor blade method or the like on a film of polyethylene terephthalate or the like. The sheet formed into a sheet is dried to remove the solvent to obtain a green sheet. If necessary, these green sheets are formed with wiring patterns, vias, etc. by screen printing using a silver paste, and usually a plurality of sheets are laminated and fired.
  • resin such as polyvinyl buty
  • the method of forming the substrate of the present invention by LTCC is not limited. However, after the silver conductor that becomes the silver conductor layer is printed on the green sheet that becomes the lower ceramic layer later using the silver paste, another method that becomes the upper ceramic layer is obtained.
  • a method of laminating and firing green sheets, a method of printing and firing a glass-ceramic paste serving as an upper ceramic layer on a green sheet serving as a lower ceramic layer printed with a silver conductor, and using a silver paste on a green sheet There is a method of printing and baking a glass-ceramic paste for forming a top ceramic layer after printing and firing a silver conductor.
  • the green sheet is processed into a desired shape and fired to form a substrate.
  • the object to be fired is a stack of one or more identical green sheets.
  • the calcination is typically performed at 850 to 900 ° C. for 20 to 60 minutes. More typically, the firing temperature is maintained at 860 to 880 ° C.
  • a calcination temperature is 880 degrees C or less. If it exceeds 880 ° C., silver or the silver-containing conductor may be softened during firing, and the shape of the conductor pattern may not be maintained. More preferably, it is 870 degreeC or less.
  • the thickness of the upper ceramic layer is preferably 5 to 100 ⁇ m. If the thickness is less than 5 ⁇ m, the surface of the silver conductor layer is rough, so that the light emitting element tends to tilt when the light emitting element is disposed, and the light extraction efficiency may be deteriorated. If it exceeds 100 ⁇ m, the heat dissipation of the light emitting element may be hindered and the light emission efficiency may be reduced. Alternatively, the light extraction efficiency may be deteriorated due to the absorption of light and the decrease in reflectance.
  • the upper ceramic layer of the substrate of the present invention is preferably composed of a glass-ceramic comprising a glass component and a ceramic filler component.
  • the proportion of the ceramic filler component is 40 to 60% by mass, and the remainder is a glass component.
  • a glass-ceramic having the glass of the present invention and a ceramic filler component described later in this proportion is hereinafter referred to as a first glass-ceramic.
  • the ceramic filler is mixed for the purpose of improving thermal conductivity, and a material having high thermal conductivity and low light absorption in the visible light region is preferable.
  • Alumina is typically used.
  • the mixing amount is 40 to 60% by mass when the total amount of the glass component and the ceramic filler component is 100. If it is less than 40%, the thermal conductivity does not increase, and the effect on heat dissipation is small. If it exceeds 60%, the sinterability may be impaired, and the silver conductor layer may not be sufficiently protected.
  • the upper ceramic layer of the substrate of the present invention preferably has little light absorption, and is preferably white.
  • the upper ceramic layer of the substrate of the present invention is formed, for example, by pasting first glass-ceramics, screen printing, and firing. Alternatively, it is formed by firing the first glass-ceramic as a green sheet. However, there is no particular limitation as long as it is a method that can typically form a flat film having a thickness of 5 to 100 ⁇ m.
  • the total content of the glass is 10% or less (hereinafter referred to as the glass of the present invention).
  • the glass of the present invention is obtained by a melting method and is pulverized into glass powder.
  • the method of pulverization is not limited as long as it does not impair the object of the present invention, and any of dry pulverization and wet pulverization can be appropriately employed.
  • wet pulverization it is preferable to use water as a solvent.
  • a pulverizer such as a roll mill, a ball mill, or a jet mill can be appropriately used. After pulverization, the glass is dried and classified as necessary.
  • alumina While such particle size and shape of the alumina is not particularly limited, typically those average particle diameter D 50 of 1 5 [mu] m ⁇ is used.
  • An example of such alumina is AL-47H manufactured by Showa Denko.
  • the average particle diameter D 50 of the herein refers to a value measured using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the light reflecting conductor layer is preferably made of a silver conductor, and is preferably made of a silver alloy conductor.
  • materials other than silver conductors include silver-palladium alloys and silver-platinum alloys. From the viewpoint of further increasing the reflectance of the light reflecting conductor layer, it is preferable that no other inorganic component is contained.
  • the second glass-ceramics constituting the lower ceramic layer and the first glass-ceramics constituting the upper ceramic layer may have the same composition.
  • the glass of this invention can be used conveniently also for the glass selected as glass for forming a lower ceramic layer.
  • the glass composition used for the second glass-ceramics for forming the lower ceramic layer is, for example, 57% to 65% SiO 2 in terms of mol%, B 2 O 3 Is preferably 13 to 18%, Al 2 O 3 is 3 to 8%, CaO is 9 to 23%, and at least one of K 2 O and Na 2 O is contained in an amount of 0.5 to 6%.
  • the ceramic filler is typically alumina. In this case, the mixing ratio of the glass powder and the alumina powder is typically 40% by mass of the glass powder and 60% by mass of the alumina filler.
  • the glass of the present invention will be described.
  • the composition is expressed in mol% and is simply expressed as%.
  • SiO 2 is a glass network former and is essential. If it is less than 62%, silver coloring tends to occur, and the reflectivity of the substrate may decrease. Preferably, it is 64% or more, more preferably 74% or more. If it exceeds 85%, the glass melting temperature becomes high, or the glass softening temperature (Ts) becomes high, and the necessary firing temperature may become high. Preferably, it is 84% or less, More preferably, it is 82% or less.
  • B 2 O 3 is a glass network former and is essential. If it is less than 5%, the glass melting temperature tends to be high, or Ts tends to be too high. Preferably, it is 10% or more, more preferably 12% or more. If it exceeds 25%, it is difficult to obtain stable glass, or the chemical durability may be lowered. Preferably, it is 22% or less, more preferably 18% or less.
  • Al 2 O 3 is not essential, but may be contained in a range of 5% or less in order to enhance the stability or chemical durability of the glass. If it exceeds 5%, yellow coloring (silver coloring) tends to occur when fired on a silver conductor. Preferably, it is 1% or less, more preferably 0.5% or less.
  • the total content of SiO 2 and Al 2 O 3 is 62 to 85%. If it is less than 62%, chemical durability may be insufficient. Preferably, it is 64% or more, more preferably 74% or more. If it exceeds 85%, the glass melting temperature becomes high, or Ts becomes too high, which may make firing at low temperatures difficult. Preferably, it is 84% or less, More preferably, it is 82% or less.
  • Na 2 O and K 2 O are not essential, but are components that lower Ts, and can be contained up to 5% in total. If it exceeds 5%, chemical durability, particularly acid resistance, may be deteriorated, or the electrical insulation of the fired product may be deteriorated. Preferably, it is 4% or less, more preferably 3% or less. Moreover, it is preferable to contain 0.9% or more.
  • MgO, CaO, SrO and BaO are not essential, but may be contained up to 10% in total in order to reduce Ts or stabilize the glass. If it exceeds 10%, silver coloring tends to occur. Preferably, it is 7% or less in total, and more preferably 5% or less in total.
  • the glass of the present invention consists essentially of the above components, but may contain other components as long as the object of the present invention is not impaired. When such components are contained, the total content of these components is preferably 10% or less. However, lead oxide is not contained.
  • the glass of the present invention is a SiO 2 78 ⁇ 82%, B 2 O 3 and 16 ⁇ 18%, Na 2 O and K 2 O at least one agent In total (0.9 to 4%), Al 2 O 3 content of 0.5% or less, and CaO content of 1% or less (hereinafter referred to as glass A of the present invention). Is preferred.
  • the glass A of the present invention is the glass of the present invention, and is particularly preferable when the upper ceramic layer does not impair the reflection performance of the light reflecting conductor layer and it is desired to increase the reflectance.
  • SiO 2 is a glass network former and is essential. If it is less than 78%, the chemical durability is lowered. Preferably it is 80% or more. If it exceeds 82%, the glass melting temperature tends to be high, or Ts tends to be too high.
  • B 2 O 3 is a glass network former and is essential. If it is less than 16%, the glass melting temperature tends to be high or Ts tends to be too high, and if it exceeds 18%, it is difficult to obtain stable glass, or the chemical durability may be lowered. Preferably it is 17% or less.
  • Al 2 O 3 is not essential, but may be contained in a range of 0.5% or less in order to enhance the stability or chemical durability of the glass. If it exceeds 0.5%, the glass melting temperature becomes high, or Ts becomes too high.
  • Na 2 O and K 2 O are components that lower Ts, and preferably contain at least one of them. If the total is less than 0.9%, the glass melting temperature may be high or Ts may be too high, preferably 1.0% or more, more preferably 1.5% or more. If it exceeds 4%, chemical durability, particularly acid resistance, may be deteriorated, or the electrical insulation of the fired product may be deteriorated. Preferably it is 3% or less, More preferably, it is 2% or less.
  • CaO is not essential, but may be contained in a range of 1% or less in order to lower Ts or stabilize the glass. If it exceeds 1%, the glass melting temperature becomes too low, or crystallization is promoted and a transparent glass layer cannot be obtained. Preferably it is 0.6% or less.
  • the glass A of the present invention consists essentially of the above components, but may contain other components as long as the object of the present invention is not impaired. When such components are contained, the total content of these components is preferably 10% or less. However, lead oxide is not contained.
  • a green sheet for forming the lower ceramic layer was produced by the following method. That is, in terms of mol%, SiO 2 is 60.4%, B 2 O 3 is 15.6%, Al 2 O 3 is 6%, CaO is 15%, K 2 O is 1%, Na 2 O is 2 Glass raw materials were prepared and mixed so as to have a composition of%, and the mixed raw materials were put in a platinum crucible and melted at 1550 to 1600 ° C. for 60 minutes, and then the molten glass was poured out and cooled. The obtained glass was pulverized in ethyl alcohol using an alumina ball mill for 20 to 60 hours to obtain a glass powder. The D 50 of the powder was 2.5 ⁇ m was measured using a Shimadzu Corporation SALD2100.
  • Ts (unit: ° C.) and the crystallization peak temperature Tc (unit: ° C.) were measured up to 1000 ° C. at a heating rate of 10 ° C./min using a thermal analyzer TG-DTA2000 manufactured by Bruker AXS.
  • Ts was unclear and Tc was 850 ° C.
  • An organic solvent toluene, xylene, 2-propanol, 2-butanol is used in a mass ratio of 4: 2 to 50 g of powder obtained by mixing 40% of the glass powder and 60% of alumina powder AL-45H manufactured by Showa Denko KK in mass%.
  • Example 1 to 18 A glass-ceramic paste for forming the upper ceramic layer was produced by the following method. That is, as shown in each example of Table 1 to Table 3, raw materials are prepared and mixed so as to have a composition represented by mol% in the columns from SiO 2 to ZrO 2 , and the mixed raw materials are put in a platinum crucible. After melting at 1550-1600 ° C. for 60 minutes, the molten glass was poured out and cooled. The obtained glass was pulverized in ethyl alcohol for 20 to 60 hours using an alumina ball mill to obtain glass powder in the same manner as described above. D 50 (unit: ⁇ m) of each glass powder obtained was measured using SALD2100 manufactured by Shimadzu Corporation.
  • the softening point Ts (unit: ° C.) and the crystallization peak temperature Tc (unit: ° C.) were measured up to 1000 ° C. at a temperature rising rate of 10 ° C./min using a Bruker AXS thermal analyzer TG-DTA2000. did.
  • the respective values of D 50 (unit: ⁇ m), softening point Ts (unit: ° C), and crystallization peak temperature (Tc unit: ° C) measured for the glass powder of each composition are shown in the respective columns of Tables 1 to 3. . What is described as “unclear” in the column of Ts is that the inflection point indicating Ts is unclear. In the column of “Tc”, “ ⁇ ” indicates that no crystal peak was observed by 1000 ° C.
  • Each glass powder and alumina powder AL-45H were mixed to obtain a glass-ceramic mixed powder in which the content of the alumina powder was in the ratio indicated by mass% in the filler addition amount column of Tables 1 to 3.
  • a glass-ceramic paste was prepared by dispersing three times.
  • Examples 1 to 11 are examples of the glass-ceramics of the present invention.
  • Examples 1 to 7 are examples of the glass-ceramics of the present invention using the glass of the present invention.
  • Silver powder (S400-2 manufactured by Daiken Chemical Industry Co., Ltd.) and the above organic vehicle are mixed at a mass ratio of 85:15, kneaded for 1 hour in a porcelain mortar, and further dispersed using a three-roll mill. A paste was prepared.
  • each glass-ceramic paste for forming the upper ceramic layer of Examples 1 to 18 is printed on the silver paste. This was held at 550 ° C. for 5 hours to decompose and remove the resin component, then held at 870 ° C. for 30 minutes and baked, and as shown in FIG. 1, the lower ceramic layer 10, the silver conductor layer 2 and the upper portion A ceramic substrate (LTCC substrate) 1 in which a ceramic layer was laminated and the silver conductor layer 2 was built up to the end thereof was obtained.
  • LTCC substrate LTCC substrate
  • each LTCC substrate 1 The reflectance of the main surface of each LTCC substrate 1 is measured using a spectroscope USB2000 of Ocean Optics and a small integrating sphere ISP-RF, and the average value of 400 to 800 nm in the visible light region is taken as the reflectance (unit:%). Calculated. The results are shown in Tables 1 to 3.
  • the reflectance is preferably 90% or more, and the higher the reflectance.
  • the acid resistance of the upper ceramic layer was evaluated by the following method. That is, 4 g of the glass-ceramic mixed powder was pressed with a die and fired to obtain a sintered body having a diameter of about 14 mm and a height of about 1.5 cm. It was immersed in 700 cm 3 of oxalate buffer and the mass loss after 1 hour was measured. In addition, the mass after immersion was performed after drying at 100 degreeC for 1 hour. The mass loss per unit surface area of the fired body (unit: ⁇ g / cm 2 ) is shown in the acid resistance column of Tables 1 to 3.
  • the acid resistance is preferably 100 ⁇ g / cm 2 or less, more preferably 30 ⁇ g / cm 2 or less. If it exceeds 100 ⁇ g / cm 2 , components in the glass may elute in the plating solution and continuous operation may not be possible, or the upper ceramic layer may be eroded and light absorption may be increased.
  • the heat dissipating property was measured using a thermal resistance measuring instrument (model: TH-2167) manufactured by Guangyueon Electric Co., Ltd.
  • a thermal resistance measuring instrument model: TH-2167
  • Four LED chips, GQ2CR460Z from Showa Denko KK were connected in series, and KE-3000-M2 from Shin-Etsu Chemical Co., Ltd. was used as the die bond material.
  • As the sealant SCR-1016A manufactured by Shin-Etsu Chemical Co., Ltd. was used.
  • the applied current was set to 35 mA, current was applied until the voltage drop saturated, and the saturation temperature Tj (° C.) was calculated from the temperature coefficient derived from the temperature-voltage drop characteristics of the LED chip.
  • the saturation temperature is preferably less than 50 ° C, more preferably 45 ° C or less. When the temperature is higher than 50 ° C., the voltage drop becomes large, and the light extraction efficiency of the LED chip may be deteriorated or the life may be shortened.
  • a light-emitting device that has high light reflectivity, little reduction in reflectivity due to corrosion, and improved light extraction efficiency.
  • a light-emitting device can be a mobile phone, a large liquid crystal TV, or the like. It can be suitably used for various backlights and various lighting devices. It should be noted that the entire contents of the specification, claims, drawings and abstract of Japanese Patent Application No. 2009-148577 filed on June 23, 2009 are incorporated herein by reference. .
  • LTCC substrate ceramic substrate
  • 2 light reflecting conductor layer (silver conductor layer, conductor layer)
  • 3 upper ceramic layer
  • 4 via conductor
  • 5 sealing resin layer (with phosphor)
  • 6 Light emitting element
  • 7 bonding wire
  • 8 external electrode terminal
  • 9 gold plating
  • 10 lower ceramic layer
  • 11 opening hole

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  • Led Device Packages (AREA)
  • Glass Compositions (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

Disclosed is a light-emitting device which comprises a conductive layer for light reflection and has improved light extraction efficiency and excellent heat dissipation properties, said conductive layer for light reflection having a high optical reflectance that is not decreased much by corrosion. Specifically disclosed is a light-emitting device which comprises: a ceramic substrate which has a lower ceramic layer, a conductive layer for light reflection that is formed in a desired region on the surface of the lower ceramic layer, and an upper ceramic layer that is formed so as to cover at least a partial region of the conductive layer for light reflection; and a light-emitting element that is arranged on top of the upper ceramic layer of the ceramic substrate. The light-emitting device is characterized in that the upper ceramic layer has a thickness of 5-100 µm. The upper ceramic layer may be configured of a glass-ceramic material that contains, in mass%, 40-60% of a glass component and 40-60% of a ceramic filler component.

Description

発光装置Light emitting device

 本発明は発光ダイオード(以下、LEDと記すことがある。)デバイス、高輝度光ダイオードバックライト、ディスプレイに関連する光源、自動車照明、装飾照明、標識、広告照明、および情報ディスプレイ用途を含む照明デバイスの形成における発光装置、およびそれに用いられる実装基板に関する。 The present invention is a light emitting diode (hereinafter sometimes referred to as LED) device, a high brightness photodiode backlight, a light source associated with a display, an automotive lighting, decorative lighting, signage, advertising lighting, and lighting device including information display applications. The present invention relates to a light-emitting device in forming the substrate and a mounting substrate used therefor.

 近年、LEDなど発光装置の高輝度化、白色化に伴い、携帯電話や大型液晶TV等のバックライトに、LEDを用いた発光装置が使われるようになってきた。LEDランプを種々の用途に適用するには、白色発光を得ることが重要となる。 In recent years, with the increase in brightness and whiteness of light emitting devices such as LEDs, light emitting devices using LEDs have come to be used for backlights of mobile phones and large liquid crystal TVs. In order to apply the LED lamp to various uses, it is important to obtain white light emission.

 LEDランプで白色発光を実現する方式としては、青、緑および赤の各色に発光する3つのLEDチップを使用する方式、青色発光のLEDチップと黄色ないし橙色発光の蛍光体とを組合せる方式、青色発光のLEDとその光によって赤、緑を励起する蛍光体を組み合わせる方法、紫外線発光のLEDチップと青色、緑色および赤色発光の三色混合蛍光体とを組合せる方法などが挙げられる。LEDチップと蛍光体を組み合わせる方式としては、蛍光体を混合したエポキシ樹脂やシリコーン樹脂等の透明樹脂を流し込み、これを固化させて蛍光体を含有する樹脂層を形成した砲弾型構造が知られている。また、主面に配線パターンが形成された基板の上にLEDチップを実装し、さらにこの基板上に透明樹脂による封止部を形成した構造が知られている。 As a method of realizing white light emission with an LED lamp, a method of using three LED chips that emit light of each color of blue, green and red, a method of combining a blue light emitting LED chip and a yellow or orange light emitting phosphor, Examples include a method of combining a blue light emitting LED and a phosphor that excites red and green by the light, a method of combining an ultraviolet light emitting LED chip and a three-color mixed phosphor of blue, green, and red light emission. As a method of combining an LED chip and a phosphor, a bullet-type structure in which a transparent resin such as an epoxy resin or a silicone resin mixed with a phosphor is poured and solidified to form a resin layer containing the phosphor is known. Yes. Also known is a structure in which an LED chip is mounted on a substrate having a wiring pattern formed on the main surface, and a sealing portion made of a transparent resin is formed on the substrate.

 LEDランプにおいては、実装されたLEDチップの周りの基板上に、銀などの光反射層が形成されている。そして、この光反射層により、基板側に放射されるLEDチップからの発光や、蛍光体から励起発光される蛍光を前方へ反射させ、光の取出し効率を向上させることが行われている。 In the LED lamp, a light reflecting layer such as silver is formed on a substrate around the mounted LED chip. And by this light reflection layer, the light emission from the LED chip radiated to the substrate side and the fluorescence excited and emitted from the phosphor are reflected forward to improve the light extraction efficiency.

 しかし、銀は腐食しやすく、放置するとAgSなど化合物が生成して光反射率が低下しやすい。そのため、銀の上に樹脂封止層を形成して反射率の低下を防止しているが、一般的な封止剤として用いられるエポキシ樹脂やシリコ-ン樹脂では封止性能が低く、長期信頼性を求められる製品に使うことができなかった。
  そこで、銀導体層の腐食を防止するため銀の表面をシリコーン樹脂、アクリル樹脂、エポキシ樹脂、ウレタン樹脂などの樹脂でコートする方法(特許文献1参照)が提案されている。
However, silver is easily corroded, and if left as it is, a compound such as Ag 2 S is generated and the light reflectance is likely to be lowered. For this reason, a resin sealing layer is formed on silver to prevent a decrease in reflectivity. However, epoxy resins and silicone resins used as general sealants have low sealing performance and long-term reliability. It could not be used for products that require sex.
Therefore, a method of coating the surface of silver with a resin such as a silicone resin, an acrylic resin, an epoxy resin, or a urethane resin in order to prevent corrosion of the silver conductor layer (see Patent Document 1) has been proposed.

 しかし、樹脂でコートしても樹脂中、あるいは銀導体層と樹脂の界面から水分や腐食性の気体が入りやすく、経時的に銀導体層が腐食するため、長期信頼性に問題があった。 However, even if it is coated with resin, moisture or corrosive gas easily enters in the resin or from the interface between the silver conductor layer and the resin, and the silver conductor layer corrodes with time.

特開2007-67116号公報JP 2007-67116 A

 本発明者は、前記問題を解決するためにガラス膜を用いて基板表面の銀導体層を被覆する方法を試みた(特願2008-212591)が、ガラスは熱伝導率が低いためにLEDが発する熱の放熱性に劣り、LEDの発熱量が多い場合にはLEDにかかる電圧が低下して発光効率が低下する、LEDの寿命が短くなる、等の不具合が生じることがあった。 In order to solve the above problem, the present inventor tried a method of coating the silver conductor layer on the surface of the substrate with a glass film (Japanese Patent Application No. 2008-212591). When the heat generated from the LED is inferior and the amount of heat generated by the LED is large, the voltage applied to the LED is lowered, the luminous efficiency is lowered, and the LED life is shortened.

 本発明は光反射率が高くかつ腐食による反射率の低下が少なく、光の取出し効率が向上された発光装置の提供を目的とする。
  また、そのような光反射層の形成において工程の負荷をできるだけ抑えることを目的としている。
An object of the present invention is to provide a light-emitting device that has high light reflectivity, little reduction in reflectivity due to corrosion, and improved light extraction efficiency.
Another object of the present invention is to suppress the process load as much as possible in the formation of such a light reflecting layer.

 本発明は上記課題を解決するために、請求項1に対応する発明は、光反射用導体層の一部を露出するように穴部を備え前記光反射用導体層を内蔵するセラミックス基板と、このセラミックス基板上に前記穴部を介して導通するように配置された発光素子を有する発光装置において、前記発光素子配置面と前記光反射用導体層との間の上部セラミックス層の厚さを5~100μmとした。
 請求項2に対応する発明は、下部セラミックス層と当該下部セラミックス層面の所望領域に形成された光反射用導体層と当該光反射用導体層の少なくとも一部領域を覆って形成された上部セラミックス層とを有するセラミックス基板と、当該セラミックス基板の上部セラミックス層の上側に配置された発光素子とを備えた発光装置であって、前記上部セラミックス層の厚さは5~100μmであることを特徴とする。
 請求項3に対応する発明は、請求項2に対応する発明の発光装置において、前記セラミックス基板の下部セラミックス層の前記発光素子との反対面には外部電極端子が形成されており、当該外部電極端子と前記光反射用導体層とは、下部セラミックス層に貫通して形成されたビア導体を介して導通されていることを特徴とする。
In order to solve the above problems, the invention corresponding to claim 1 includes a ceramic substrate having a hole so as to expose a part of the light reflecting conductor layer, and incorporating the light reflecting conductor layer, In the light emitting device having the light emitting element arranged to be conducted through the hole on the ceramic substrate, the thickness of the upper ceramic layer between the light emitting element arranging surface and the light reflecting conductor layer is 5 ˜100 μm.
According to a second aspect of the present invention, there is provided a lower ceramic layer, a light reflecting conductor layer formed in a desired region of the lower ceramic layer surface, and an upper ceramic layer formed to cover at least a partial region of the light reflecting conductor layer. And a light emitting device disposed above the upper ceramic layer of the ceramic substrate, wherein the upper ceramic layer has a thickness of 5 to 100 μm. .
The invention corresponding to claim 3 is the light emitting device according to claim 2, wherein an external electrode terminal is formed on the surface of the lower ceramic layer of the ceramic substrate opposite to the light emitting element, and the external electrode The terminal and the light reflecting conductor layer are electrically connected through a via conductor formed so as to penetrate the lower ceramic layer.

 請求項4に対応する発明は、請求項1~3のいずれかに対応する発明の発光装置において、前記発光素子を包含するように形成され、かつ前記発光素子から放射される光によって励起されて可視光を発光する蛍光体を含む封止樹脂層を有するものとした。 The invention corresponding to claim 4 is the light emitting device according to any one of claims 1 to 3, wherein the light emitting device is formed so as to include the light emitting element, and is excited by light emitted from the light emitting element. It has a sealing resin layer containing a phosphor that emits visible light.

 請求項5に対応する発明は、請求項1~4のいずれかに対応する発明の発光装置において、前記上部セラミックス層を白色とした。 The invention corresponding to claim 5 is the light emitting device according to any one of claims 1 to 4, wherein the upper ceramic layer is white.

 請求項6に対応する発明は、請求項1~5のいずれかに対応する発明の発光装置において、前記上部セラミックス層が質量%表示で40~60%のガラス成分と40~60%のセラミックスフィラー成分とを含有するガラス-セラミックスで構成した。 The invention corresponding to claim 6 is the light emitting device according to any one of claims 1 to 5, wherein the upper ceramic layer is 40% to 60% glass component and 40% to 60% ceramic filler in mass%. It was composed of glass-ceramics containing the components.

 請求項7に対応する発明は、請求項6に対応する発明の発光装置において、前記セラミックスフィラー成分をアルミナとした。 The invention corresponding to claim 7 is the light emitting device of the invention corresponding to claim 6, wherein the ceramic filler component is alumina.

 請求項8に対応する発明は、請求項6または7に対応する発明の発光装置において、前記ガラス成分が酸化物基準のモル%表示でSiOを62~85%、Bを5~25%、Alを0~5%、NaOおよびKOのいずれか1種以上を合計で0~5%、含有し、SiOとAlの含有量の合計が62~85%、MgO、CaO、SrOおよびBaOの群から選ばれる少なくとも1種以上を含有する場合にその含有量の合計が10%以下であるガラスとした。 The invention corresponding to claim 8 is the light emitting device according to claim 6 or 7, wherein the glass component contains 62 to 85% of SiO 2 and 5 to 2 of B 2 O 3 in terms of mol% based on oxide. 25%, Al 2 O 3 0 to 5%, Na 2 O and one or more of K 2 O in total 0 to 5%, and the total content of SiO 2 and Al 2 O 3 is When at least one selected from the group consisting of 62 to 85%, MgO, CaO, SrO and BaO is contained, the total content is 10% or less.

 請求項9に対応する発明は、請求項6~8のいずれかに対応する発明の発光装置において、前記ガラス成分が酸化物基準のモル%表示で、SiOを78~82%、Bを16~18%、NaOおよびKOのいずれか1種以上を合計で0.9~4%含有するものとした。 The invention corresponding to claim 9 is the light emitting device of the invention corresponding to any one of claims 6 to 8, wherein the glass component is expressed by mol% on the basis of oxide, SiO 2 is 78 to 82%, B 2 O. 3 to 16 to 18%, and at least one of Na 2 O and K 2 O is contained in a total amount of 0.9 to 4%.

 請求項10に対応する発明は、請求項1~9のいずれかに対応する発明の発光装置において、前記上部セラミックス層は85℃でpH1.68のしゅう酸溶液中に1時間浸漬したときの溶出量が100μg/cm以下のガラス-セラミックスからなるものとした。
 また、本発明の発光装置用セラミックス基板は、発光素子の光を反射する光反射用導体層を有する発光装置用セラミックス基板において、下部セラミックス層と、当該下部セラミックス層上に位置する光反射用導体層と、当該光反射用導体層上および前記下部セラミックス層上に位置する上部セラミックス層とで構成され、前記光反射用導体層上に位置する前記上部セラミックス層に開口孔を形成した。そして、前記上部セラミックス層は5~100μmの厚さが好ましい。
 上記した請求項1に対応する発明における穴部とは、セラミックス基板に内蔵した光反射性導体層の一部を露出させるように上部セラミックス層に形成した開口孔をいう。上部セラミックス層の上には発光素子が配置され、上記穴部において発光素子に接続されたボンディングワイヤーが光反射性導体層を導通される。
The invention corresponding to claim 10 is the light emitting device according to any one of claims 1 to 9, wherein the upper ceramic layer is eluted when immersed in an oxalic acid solution having a pH of 1.68 at 85 ° C. for 1 hour. The amount was made of glass-ceramics of 100 μg / cm 2 or less.
The ceramic substrate for a light-emitting device of the present invention is a ceramic substrate for a light-emitting device having a light-reflecting conductor layer that reflects light from a light-emitting element, and a lower ceramic layer and a light-reflecting conductor positioned on the lower ceramic layer. And an upper ceramic layer located on the light reflecting conductor layer and the lower ceramic layer, and an opening was formed in the upper ceramic layer located on the light reflecting conductor layer. The upper ceramic layer preferably has a thickness of 5 to 100 μm.
The hole in the invention corresponding to the first aspect means an opening formed in the upper ceramic layer so as to expose a part of the light-reflective conductor layer built in the ceramic substrate. A light emitting element is disposed on the upper ceramic layer, and a bonding wire connected to the light emitting element in the hole is conducted through the light reflective conductor layer.

 本発明者は、光反射用導体層を保護するために、光反射用導体層をセラミックス基板に内蔵することによって、反射率を低下させず、放熱性に優れた発光装置を実現した。
 なお、本明細書において、「~」とは、特段の定めがない限り、その前後に記載される数値を下限値及び上限値として含む意味で使用される。
In order to protect the light reflecting conductor layer, the present inventor has realized a light emitting device excellent in heat dissipation without reducing the reflectance by incorporating the light reflecting conductor layer in the ceramic substrate.
In the present specification, “˜” is used to mean that the numerical values described before and after the value are included as the lower limit value and the upper limit value unless otherwise specified.

 本発明の発光装置は基板主面に光反射率が極めて高い光反射用導体層が形成されているので、基板側に放射される発光素子からの光を、基板と反対側の開口方向へ高い反射率で反射させることができる。これによって光の取出し効率を向上させることが可能となり、発光効率の向上を図ることができる。 In the light emitting device of the present invention, the light reflecting conductor layer having a very high light reflectance is formed on the main surface of the substrate, so that the light from the light emitting element radiated to the substrate side is high in the opening direction on the side opposite to the substrate. It can be reflected with reflectivity. As a result, the light extraction efficiency can be improved, and the light emission efficiency can be improved.

 また、発光素子からの光により励起されて可視光を発光する蛍光体層を有しており、この蛍光体層から発光される可視光も光反射用導体層により基板と反対側の前方へ高い反射率で反射されるので、蛍光体層から発光される可視光と発光素子から放射される光との混色による白色光の取出し効率を向上させることができる。
  また、光反射用導体層の上に光吸収の少ないガラス-セラミックスで構成された上部セラミックス層が設けられており、この層により下層の光反射用導体層が化学的に保護されている。したがって、光反射用導体層の腐食が防止され光反射率の低下が抑えられる。また、上部セラミックス層は熱伝導率が高く、LEDチップの熱放散を阻害しにくく、発光効率の低下や寿命の短縮を防ぐことができる。
Further, it has a phosphor layer that emits visible light when excited by light from the light emitting element, and the visible light emitted from this phosphor layer is also high forward on the opposite side of the substrate by the light reflecting conductor layer. Since the light is reflected at the reflectance, it is possible to improve the extraction efficiency of white light due to color mixture of visible light emitted from the phosphor layer and light emitted from the light emitting element.
Further, an upper ceramic layer made of glass-ceramics with little light absorption is provided on the light reflecting conductor layer, and the lower light reflecting conductor layer is chemically protected by this layer. Therefore, corrosion of the light reflecting conductor layer is prevented, and a decrease in light reflectance is suppressed. In addition, the upper ceramic layer has a high thermal conductivity, and it is difficult to inhibit the heat dissipation of the LED chip, thereby preventing the light emission efficiency from being lowered and the life from being shortened.

本発明に用いられる光反射用導体層を内蔵するセラミック基板の断面図の一例である。It is an example of sectional drawing of the ceramic substrate which incorporates the light reflection conductor layer used for this invention. 本発明の発光装置の断面図の一例である。It is an example of sectional drawing of the light-emitting device of this invention. 光反射用導体層表面にメッキを施した本発明の発光装置の断面図の一例である。It is an example of sectional drawing of the light-emitting device of this invention which plated the conductor layer surface for light reflection.

 本発明の発光装置におけるセラミックス基板1は、図2および図3に示すように、上部セラミックス層3と、光反射導体層2と下部セラミックス層10とから形成されている。そして、上部セラミック層3の上側に発光素子6が配されている。セラミックス基板1の下部セラミックス層10の発光素子6との反対面には外部電極端子8が形成されており、外部電極端子8と光反射用導体層2とは、下部セラミックス層10に貫通して形成されたビア導体4を介して導通されている。前記上部セラミックス層3の所望部分には、開口孔11が形成され、この開口孔11においてボンディングワイヤ7が接続され、当該ボンディングワイヤ7を介して発光素子6と光反射用導体層2とは導通されている。図において5は、発光素子6を包含し、かつ上部セラミックス層3と光反射導体層2の所望の領域を覆って形成された封止樹脂層であり、この封止樹脂層5には、発光素子から放射される光によって励起されて可視光を発光する蛍光体が含有されている。
 図3に示した例は、光反射導体層2の露出した表面、すなわち上部セラミックス層3が形成されておらず、上部セラミックス層3に開口孔11が形成されている部分に対応する光反射導体層2の所望の領域の表面に金メッキ層9を形成して、光反射導体層2の変色による特性劣化を防止したものである。
 本発明において、上記した光反射用導体層として、特に優れているものは、導体として機能し、かつ光反射性にも優れた銀導体である。以下、光反射用導体層を銀導体層と記すことがある。かかる銀導体層を用いたものを代表例として、以下に本発明を説明する。
As shown in FIGS. 2 and 3, the ceramic substrate 1 in the light emitting device of the present invention is formed of an upper ceramic layer 3, a light reflecting conductor layer 2, and a lower ceramic layer 10. A light emitting element 6 is disposed on the upper ceramic layer 3. An external electrode terminal 8 is formed on the surface of the ceramic substrate 1 opposite to the light emitting element 6 of the lower ceramic layer 10. The external electrode terminal 8 and the light reflecting conductor layer 2 penetrate through the lower ceramic layer 10. It is conducted through the formed via conductor 4. An opening hole 11 is formed in a desired portion of the upper ceramic layer 3, and a bonding wire 7 is connected to the opening hole 11, and the light emitting element 6 and the light reflecting conductor layer 2 are electrically connected via the bonding wire 7. Has been. In the figure, reference numeral 5 denotes a sealing resin layer that includes the light emitting element 6 and covers a desired region of the upper ceramic layer 3 and the light reflecting conductor layer 2. A phosphor that emits visible light when excited by light emitted from the element is contained.
In the example shown in FIG. 3, the light reflecting conductor corresponding to the exposed surface of the light reflecting conductor layer 2, that is, the portion where the upper ceramic layer 3 is not formed and the opening hole 11 is formed in the upper ceramic layer 3. A gold plating layer 9 is formed on the surface of a desired region of the layer 2 to prevent characteristic deterioration due to discoloration of the light reflecting conductor layer 2.
In the present invention, particularly excellent as the above-described light reflecting conductor layer is a silver conductor that functions as a conductor and has excellent light reflectivity. Hereinafter, the light reflecting conductor layer may be referred to as a silver conductor layer. The present invention will be described below with a representative example using such a silver conductor layer.

 本発明の発光装置は、上記したように、銀導体層を内蔵するセラミックス基板(以下、本発明の基板と記すことがある。)と、銀導体層と導通させるように本発明の基板上に配置された発光素子とを有する。ここで、本発明の基板は上部セラミックス層と、光反射導体層と下部セラミックス層とから形成されている。 As described above, the light-emitting device of the present invention has a ceramic substrate (hereinafter sometimes referred to as a substrate of the present invention) containing a silver conductor layer on the substrate of the present invention so as to be electrically connected to the silver conductor layer. And a light emitting element arranged. Here, the board | substrate of this invention is formed from the upper ceramic layer, the light reflection conductor layer, and the lower ceramic layer.

 本発明の基板は、発光素子が搭載される平板状の部材であり、発光素子から下方へ向かう光、すなわち、図2,3において矢印A方向に向かう光を反射するための銀導体層を有することを特徴とする。 The substrate of the present invention is a flat member on which a light emitting element is mounted, and has a silver conductor layer for reflecting light traveling downward from the light emitting element, that is, light traveling in the direction of arrow A in FIGS. It is characterized by that.

 本発明の基板の上部セラミックス層は、銀導体層を腐食などから保護するための層であり、ガラス成分とセラミックスフィラー成分とを含有するものであることが好ましい。典型的にはLTCC(Low Temperature Co-fired Ceramics)基板(低温同時焼成積層セラミックス基板)である。本発明の基板の上部セラミックス層はガラス成分を含有するので封止性能が高く、内部の銀導体層を十分に保護することができる。また、セラミックスフィラー成分を含有するので熱伝導率が高い。また、厚みは100μm以下と薄いので銀導体層で反射された光が吸収されにくく、高い反射率を得ることができる。 The upper ceramic layer of the substrate of the present invention is a layer for protecting the silver conductor layer from corrosion and the like, and preferably contains a glass component and a ceramic filler component. Typically, it is a LTCC (Low Temperature Co-fired Ceramics) substrate (low temperature co-fired laminated ceramic substrate). Since the upper ceramic layer of the substrate of the present invention contains a glass component, the sealing performance is high and the internal silver conductor layer can be sufficiently protected. Moreover, since the ceramic filler component is contained, the thermal conductivity is high. Moreover, since the thickness is as thin as 100 μm or less, the light reflected by the silver conductor layer is hardly absorbed, and a high reflectance can be obtained.

 本発明の基板において、下部セラミックス層を構成する材料は銀導体等を焼き付けられるセラミックスであれば特に限定されないが、熱伝導率や放熱性、強度、コストの観点から上記したLTCC基板であることが好ましい。LTCCは銀導体との同時焼成が可能なセラミックスであり、本発明の基板を構成する上部セラミックス層と下部セラミックス層とが共にLTCCであれば、上部セラミックス層と下部セラミックス層と銀導体層とが一体化した本発明の基板を効率的に形成することができる。 In the substrate of the present invention, the material constituting the lower ceramic layer is not particularly limited as long as it is a ceramic on which a silver conductor or the like can be baked, but it may be the above-described LTCC substrate from the viewpoint of thermal conductivity, heat dissipation, strength, and cost. preferable. LTCC is a ceramic that can be fired simultaneously with a silver conductor. If both the upper ceramic layer and the lower ceramic layer constituting the substrate of the present invention are LTCC, the upper ceramic layer, the lower ceramic layer, and the silver conductor layer are The integrated substrate of the present invention can be formed efficiently.

 本発明において、発光素子はLED素子であり、放射した光で蛍光体を励起して可視光を発光させるタイプのものが挙げられる。たとえば、青色発光タイプのLEDチップや紫外発光タイプのLEDチップが例示される。ただし、これらに限定されるものではなく、発光装置の用途や目的とする発光色等に応じて種々の発光素子を使用することができる。 In the present invention, the light emitting element is an LED element, and includes a type that emits visible light by exciting a phosphor with emitted light. For example, a blue light emitting type LED chip and an ultraviolet light emitting type LED chip are exemplified. However, the present invention is not limited to these, and various light-emitting elements can be used depending on the application of the light-emitting device, the intended emission color, and the like.

 発光素子の実装は、例えば、LEDチップを基板上にエポキシ樹脂やシリコーン樹脂で接着(ダイボンド)するとともに、チップ上面の電極を金線等のボンディングワイヤを介してセラミック基板のパッド部に接続する方法、あるいは、LEDチップの裏面に設けられた半田バンプ、Auバンプ、Au-Sn共晶バンプ等のバンプ電極を、セラミック基板のリード端子やパッド部にフリップチップ接続する方法などにより行われる。 The mounting of the light emitting element is, for example, a method in which the LED chip is bonded to the substrate with an epoxy resin or a silicone resin (die bonding), and the electrode on the upper surface of the chip is connected to the pad portion of the ceramic substrate via a bonding wire such as a gold wire. Alternatively, bump electrodes such as solder bumps, Au bumps, and Au—Sn eutectic bumps provided on the back surface of the LED chip are flip-chip connected to the lead terminals and pad portions of the ceramic substrate.

 蛍光体は、発光素子から放射された光により励起されて可視光を発光し、この可視光と発光素子から放射される光との混色によって、あるいは蛍光体から発光される可視光または可視光自体の混色によって、発光装置として所望の発光色を得るものである。蛍光体の種類は特に限定されるものではなく、目的とする発光色や発光素子から放射される光等に応じて適宜に選択される。このような蛍光体を含む蛍光体層は、蛍光体をシリコーン樹脂やエポキシ樹脂のような透明樹脂に混合・分散させたものとして形成される。蛍光体層は、発光素子の外側を覆うように形成される。 The phosphor is excited by the light emitted from the light emitting element to emit visible light, and the visible light or the visible light itself emitted from the phosphor by color mixing of the visible light and the light emitted from the light emitting element. As a light emitting device, a desired light emission color is obtained by mixing the colors. The type of the phosphor is not particularly limited, and is appropriately selected according to the intended emission color, light emitted from the light emitting element, and the like. The phosphor layer containing such a phosphor is formed by mixing and dispersing the phosphor in a transparent resin such as a silicone resin or an epoxy resin. The phosphor layer is formed so as to cover the outside of the light emitting element.

 以下、本発明の実施形態について説明するが、本発明はこれらに限定されない。
  本発明の基板の下部セラミックス層は銀導体層とそれを保護する上部セラミックス層(絶縁層)が設けることができれば特に限定されないが、以下では本発明の基板の全体がLTCC基板である場合について説明する。
Hereinafter, although embodiment of this invention is described, this invention is not limited to these.
The lower ceramic layer of the substrate of the present invention is not particularly limited as long as it can be provided with a silver conductor layer and an upper ceramic layer (insulating layer) that protects the silver conductor layer. Hereinafter, the case where the entire substrate of the present invention is an LTCC substrate will be described. To do.

 LTCC基板は、銀導体層と同時に焼成して製造することが可能な基板である。LTCC基板は通常、ガラス粉末とセラミックスフィラー粉末とをグリーンシートにして焼成することによって製造される。すなわち、まずガラス粉末とアルミナ粉末と、ポリビニルブチラールやアクリル樹脂等の樹脂と、フタル酸ジブチル、フタル酸ジオクチル、フタル酸ブチルベンジル等の可塑剤と、トルエン、キシレン、ブタノール等の溶剤と、分散剤等を添加してスラリーとし、ポリエチレンテレフタレート等のフィルム上にドクターブレード法等によってこのスラリーをシート状に成形する。このシート状に成形されたものを乾燥して溶剤を除去しグリーンシートとする。これらグリーンシートには必要に応じて、銀ペーストを用いてスクリーン印刷等によって配線パターンやビアなどが形成され、通常は複数枚を積層して焼成される。 The LTCC substrate is a substrate that can be manufactured by firing at the same time as the silver conductor layer. The LTCC substrate is usually manufactured by baking glass powder and ceramic filler powder as a green sheet. That is, first, glass powder and alumina powder, resin such as polyvinyl butyral and acrylic resin, plasticizer such as dibutyl phthalate, dioctyl phthalate, butyl benzyl phthalate, solvent such as toluene, xylene, butanol, and dispersant Etc. are added to form a slurry, and this slurry is formed into a sheet by a doctor blade method or the like on a film of polyethylene terephthalate or the like. The sheet formed into a sheet is dried to remove the solvent to obtain a green sheet. If necessary, these green sheets are formed with wiring patterns, vias, etc. by screen printing using a silver paste, and usually a plurality of sheets are laminated and fired.

 本発明の基板をLTCCで形成する方法は限定されないが、後に下部セラミックス層となるグリーンシート上に銀ペーストを用いて銀導体層となる銀導体を印刷した上に、上部セラミックス層となる別のグリーンシートを積層して焼成する方法、銀導体を印刷した下部セラミックス層となるグリーンシート上に、上部セラミックス層となるガラス-セラミックスペーストを印刷して焼成する方法、グリーンシート上に銀ペーストを用いて銀導体を印刷し、焼成した後に上部セラミックス層を形成するガラス-セラミックスペーストを印刷して焼成する方法がある。 The method of forming the substrate of the present invention by LTCC is not limited. However, after the silver conductor that becomes the silver conductor layer is printed on the green sheet that becomes the lower ceramic layer later using the silver paste, another method that becomes the upper ceramic layer is obtained. A method of laminating and firing green sheets, a method of printing and firing a glass-ceramic paste serving as an upper ceramic layer on a green sheet serving as a lower ceramic layer printed with a silver conductor, and using a silver paste on a green sheet There is a method of printing and baking a glass-ceramic paste for forming a top ceramic layer after printing and firing a silver conductor.

 グリーンシートは、所望の形状に加工され焼成されて基板とされる。この場合、被焼成体は1枚または複数枚の同じグリーンシートを重ねたものである。前記焼成は典型的には850~900℃に20~60分間保持して行われる。より典型的には焼成温度860~880℃に保持されて行われる。
  なお、銀導体層を形成する場合、焼成温度は880℃以下であることが好ましい。880℃超では焼成時に銀または銀含有導体が軟化し導体パターンの形状が保持できなくなるおそれがある。より好ましくは870℃以下である。
The green sheet is processed into a desired shape and fired to form a substrate. In this case, the object to be fired is a stack of one or more identical green sheets. The calcination is typically performed at 850 to 900 ° C. for 20 to 60 minutes. More typically, the firing temperature is maintained at 860 to 880 ° C.
In addition, when forming a silver conductor layer, it is preferable that a calcination temperature is 880 degrees C or less. If it exceeds 880 ° C., silver or the silver-containing conductor may be softened during firing, and the shape of the conductor pattern may not be maintained. More preferably, it is 870 degreeC or less.

 上部セラミックス層の厚みは5~100μmであることが好ましい。5μm未満では銀導体層表面の粗さのために、発光素子を配置する時に発光素子が傾きやすく、光取出し効率が悪くなるおそれがある。100μm超では発光素子の放熱性を阻害し発光効率が低下してしまうおそれがある。または、光が吸収され、反射率が低下することで光の取出し効率が悪くなるおそれがある。 The thickness of the upper ceramic layer is preferably 5 to 100 μm. If the thickness is less than 5 μm, the surface of the silver conductor layer is rough, so that the light emitting element tends to tilt when the light emitting element is disposed, and the light extraction efficiency may be deteriorated. If it exceeds 100 μm, the heat dissipation of the light emitting element may be hindered and the light emission efficiency may be reduced. Alternatively, the light extraction efficiency may be deteriorated due to the absorption of light and the decrease in reflectance.

 本発明の基板の上部セラミックス層はガラス成分とセラミックスフィラー成分とからなるガラス-セラミックスで構成されることが好ましい。その割合はセラミックスフィラー成分が40~60質量%であり、残りはガラス成分である。後述する本発明のガラスとセラミックフィラー成分とをこの割合で有するガラス-セラミックスを、以下第1のガラス-セラミックスという。 The upper ceramic layer of the substrate of the present invention is preferably composed of a glass-ceramic comprising a glass component and a ceramic filler component. The proportion of the ceramic filler component is 40 to 60% by mass, and the remainder is a glass component. A glass-ceramic having the glass of the present invention and a ceramic filler component described later in this proportion is hereinafter referred to as a first glass-ceramic.

 前記セラミックスフィラーは熱伝導を向上させる目的で混合されるものであり、熱伝導率が高く可視光域で光吸収が少ない材料が好ましい。典型的にはアルミナが用いられる。混合量はガラス成分とセラミックスフィラー成分との合量を100とした場合、40~60質量%である。40%未満では熱伝導率が上がらず、熱放散性に対する効果が小さい。60%超では焼結性を阻害してしまい、銀導体層の保護が不十分になるおそれがある。 The ceramic filler is mixed for the purpose of improving thermal conductivity, and a material having high thermal conductivity and low light absorption in the visible light region is preferable. Alumina is typically used. The mixing amount is 40 to 60% by mass when the total amount of the glass component and the ceramic filler component is 100. If it is less than 40%, the thermal conductivity does not increase, and the effect on heat dissipation is small. If it exceeds 60%, the sinterability may be impaired, and the silver conductor layer may not be sufficiently protected.

 本発明の基板の上部セラミックス層は光の吸収が少ないものであることが好ましく、白色であることが好ましい。 The upper ceramic layer of the substrate of the present invention preferably has little light absorption, and is preferably white.

 本発明の基板の上部セラミックス層は、たとえば第1のガラス-セラミックスをペースト化してスクリーン印刷し、焼成して形成される。または第1のガラス-セラミックスをグリーンシートにして焼成して形成される。しかし、典型的には5~100μmの厚みのものを平坦に形成できる方法であれば特に限定されるものではない。 The upper ceramic layer of the substrate of the present invention is formed, for example, by pasting first glass-ceramics, screen printing, and firing. Alternatively, it is formed by firing the first glass-ceramic as a green sheet. However, there is no particular limitation as long as it is a method that can typically form a flat film having a thickness of 5 to 100 μm.

 第1のガラス-セラミックスに含まれるガラス成分は、酸化物基準のモル%表示でSiOを62~85%、Bを5~25%、Alを0~5%、NaOおよびKOのいずれか1種以上を合計で0~5%、含有し、SiOとAlの含有量の合計が62~85%、MgO、CaO、SrOおよびBaOの群から選ばれる少なくとも1種以上を含有する場合にその含有量の合計が10%以下のガラス(以下、本発明のガラスという)であることが好ましい。 The first glass - glass component contained in the ceramics, the SiO 2 62 ~ 85% by mol% based on oxides, B 2 O 3 5 ~ 25% , the Al 2 O 3 0 ~ 5% , Na A group of MgO, CaO, SrO and BaO, containing a total of 0 to 5% of any one or more of 2 O and K 2 O, and a total content of SiO 2 and Al 2 O 3 of 62 to 85% In the case of containing at least one selected from the above, it is preferable that the total content of the glass is 10% or less (hereinafter referred to as the glass of the present invention).

 本発明のガラスは、溶融法によって得られ、粉砕してガラス粉末とされる。粉砕の方法は本発明の目的を損なわないものであれば限定されず、乾式粉砕でも湿式粉砕でも適宜採用できる。湿式粉砕の場合には、溶媒として水を用いることが好ましい。また粉砕にはロールミル、ボールミル、ジェットミル等の粉砕機を適宜用いることができる。ガラスは粉砕後、必要に応じて乾燥され、分級される。 The glass of the present invention is obtained by a melting method and is pulverized into glass powder. The method of pulverization is not limited as long as it does not impair the object of the present invention, and any of dry pulverization and wet pulverization can be appropriately employed. In the case of wet pulverization, it is preferable to use water as a solvent. For pulverization, a pulverizer such as a roll mill, a ball mill, or a jet mill can be appropriately used. After pulverization, the glass is dried and classified as necessary.

 アルミナの粒度や形状などは特に限定されないが、典型的には平均粒径D50が1~5μmのものが用いられる。そのようなアルミナとしてたとえば昭和電工社製のAL-47Hが挙げられる。本明細書での平均粒径D50は、レーザー回折/散乱式粒度分布測定装置を用いて測定したものをいう。 While such particle size and shape of the alumina is not particularly limited, typically those average particle diameter D 50 of 1 5 [mu] m ~ is used. An example of such alumina is AL-47H manufactured by Showa Denko. The average particle diameter D 50 of the herein refers to a value measured using a laser diffraction / scattering particle size distribution measuring apparatus.

 光反射用導体層は銀導体からなるものが好ましく、また銀合金導体からなるものであっても好ましい。銀導体以外の材料としては、銀-パラジウム合金、銀-白金合金等が挙げられる。光反射用導体層の反射率をより高めるという観点から他の無機成分を含有しないものであることが好ましい。 The light reflecting conductor layer is preferably made of a silver conductor, and is preferably made of a silver alloy conductor. Examples of materials other than silver conductors include silver-palladium alloys and silver-platinum alloys. From the viewpoint of further increasing the reflectance of the light reflecting conductor layer, it is preferable that no other inorganic component is contained.

 本発明の基板の下部セラミックス層をLTCCで構成する場合、下部セラミックス層を構成する第2のガラス-セラミックスと、上部セラミックス層を構成する第1のガラス-セラミックスは同じ組成でもよい。 When the lower ceramic layer of the substrate of the present invention is made of LTCC, the second glass-ceramics constituting the lower ceramic layer and the first glass-ceramics constituting the upper ceramic layer may have the same composition.

 また、本発明のガラスは、下部セラミックス層を形成するためのガラスとして選定されたガラスにも好適に使用できる。LTCC基板の強度を高くするためには、下部セラミックス層を形成する第2のガラス-セラミックスに用いられるガラスの組成として、例えば、モル%表示で、SiOが57~65%、Bが13~18%、Alが3~8%、CaOが9~23%、KOおよびNaOの少なくとも一方を0.5~6%含有するものが好ましい。またセラミックスフィラーは典型的にはアルミナである。
  この場合において、ガラス粉末とアルミナ粉末の配合比率は典型的にはガラス粉末40質量%、アルミナフィラー60質量%である。
Moreover, the glass of this invention can be used conveniently also for the glass selected as glass for forming a lower ceramic layer. In order to increase the strength of the LTCC substrate, the glass composition used for the second glass-ceramics for forming the lower ceramic layer is, for example, 57% to 65% SiO 2 in terms of mol%, B 2 O 3 Is preferably 13 to 18%, Al 2 O 3 is 3 to 8%, CaO is 9 to 23%, and at least one of K 2 O and Na 2 O is contained in an amount of 0.5 to 6%. The ceramic filler is typically alumina.
In this case, the mixing ratio of the glass powder and the alumina powder is typically 40% by mass of the glass powder and 60% by mass of the alumina filler.

 次に本発明のガラスについて説明する。なお、以下では特に断らない限り組成はモル%表示のものとし、単に%と表記する。 Next, the glass of the present invention will be described. In the following description, unless otherwise specified, the composition is expressed in mol% and is simply expressed as%.

 SiOはガラスのネットワークフォーマであり、必須である。62%未満では銀発色が生じやすくなり、基板の反射率が低下するおそれがある。好ましくは、64%以上であり、さらに好ましくは74%以上である。85%超ではガラス溶融温度が高くなる、またはガラスの軟化温度(Ts)が高くなり、必要な焼成温度が高くなることがある。好ましくは、84%以下であり、さらに好ましくは82%以下である。 SiO 2 is a glass network former and is essential. If it is less than 62%, silver coloring tends to occur, and the reflectivity of the substrate may decrease. Preferably, it is 64% or more, more preferably 74% or more. If it exceeds 85%, the glass melting temperature becomes high, or the glass softening temperature (Ts) becomes high, and the necessary firing temperature may become high. Preferably, it is 84% or less, More preferably, it is 82% or less.

 Bはガラスのネットワークフォーマであり、必須である。5%未満ではガラス溶融温度が高くなる、またはTsが高くなりすぎるおそれがある。好ましくは、10%以上であり、さらに好ましくは12%以上である。25%超では安定なガラスを得にくくなる、または化学的耐久性が低下するおそれがある。好ましくは、22%以下であり、さらに好ましくは18%以下である。 B 2 O 3 is a glass network former and is essential. If it is less than 5%, the glass melting temperature tends to be high, or Ts tends to be too high. Preferably, it is 10% or more, more preferably 12% or more. If it exceeds 25%, it is difficult to obtain stable glass, or the chemical durability may be lowered. Preferably, it is 22% or less, more preferably 18% or less.

 Alは必須ではないが、ガラスの安定性または化学的耐久性を高めるために5%以下の範囲で含有してもよい。5%超では銀導体上で焼成したときに黄色い発色(銀発色)が生じやすい。好ましくは、1%以下であり、さらに好ましくは0.5%以下である。 Al 2 O 3 is not essential, but may be contained in a range of 5% or less in order to enhance the stability or chemical durability of the glass. If it exceeds 5%, yellow coloring (silver coloring) tends to occur when fired on a silver conductor. Preferably, it is 1% or less, more preferably 0.5% or less.

 またSiOとAlの含有量の合計は62~85%である。62%未満であると化学的耐久性が不十分になるおそれがある。好ましくは、64%以上であり、さらに好ましくは74%以上である。85%超であるとガラス溶融温度が高くなる、またはTsが高くなりすぎて、低温での焼成が困難になるおそれがある。好ましくは、84%以下であり、さらに好ましくは82%以下である。 The total content of SiO 2 and Al 2 O 3 is 62 to 85%. If it is less than 62%, chemical durability may be insufficient. Preferably, it is 64% or more, more preferably 74% or more. If it exceeds 85%, the glass melting temperature becomes high, or Ts becomes too high, which may make firing at low temperatures difficult. Preferably, it is 84% or less, More preferably, it is 82% or less.

 NaOおよびKOは必須ではないがTsを低下させる成分であり、合計で5%まで含有することができる。5%超では化学的耐久性、特に耐酸性が悪化するおそれがある、または、焼成体の電気絶縁性が低下するおそれがある。好ましくは、4%以下であり、さらに好ましくは3%以下である。また、0.9%以上含有することが好ましい。 Na 2 O and K 2 O are not essential, but are components that lower Ts, and can be contained up to 5% in total. If it exceeds 5%, chemical durability, particularly acid resistance, may be deteriorated, or the electrical insulation of the fired product may be deteriorated. Preferably, it is 4% or less, more preferably 3% or less. Moreover, it is preferable to contain 0.9% or more.

 MgO、CaO、SrO、BaOはいずれも必須ではないが、Tsを低下させるまたはガラスを安定化させるために合計で10%まで含有してもよい。10%超であると銀発色が生じやすい。好ましくは合計で7%以下であり、さらに好ましくは合計で5%以下である。
  本発明のガラスは本質的に上記成分からなるが、本発明の目的を損なわない範囲でその他の成分を含有してもよい。そのような成分を含有する場合、それら成分の含有量の合計は10%以下であることが好ましい。ただし、鉛酸化物は含有しない。
MgO, CaO, SrO and BaO are not essential, but may be contained up to 10% in total in order to reduce Ts or stabilize the glass. If it exceeds 10%, silver coloring tends to occur. Preferably, it is 7% or less in total, and more preferably 5% or less in total.
The glass of the present invention consists essentially of the above components, but may contain other components as long as the object of the present invention is not impaired. When such components are contained, the total content of these components is preferably 10% or less. However, lead oxide is not contained.

 上部セラミックス層の耐酸性をより高くしたい場合には、本発明のガラスはSiOを78~82%、Bを16~18%、NaOおよびKOのいずれか1種以上を合計で0.9~4%含有し、Alの含有量が0.5%以下、CaOの含有量が1%以下のガラス(以下、本発明のガラスAという。)であることが好ましい。 If you want to higher acid resistance of the upper ceramic layer, the glass of the present invention is a SiO 2 78 ~ 82%, B 2 O 3 and 16 ~ 18%, Na 2 O and K 2 O at least one agent In total (0.9 to 4%), Al 2 O 3 content of 0.5% or less, and CaO content of 1% or less (hereinafter referred to as glass A of the present invention). Is preferred.

 次に本発明のガラスAの組成について説明する。本発明のガラスAは本発明のガラスであり、特に上部セラミックス層によって光反射用導体層の反射性能が損なわないようにし、反射率を高くしたい場合に好ましいガラスである。
 SiOはガラスのネットワークフォーマであり、必須である。78%未満では化学的耐久性が低下する。好ましくは80%以上である。82%超ではガラス溶融温度が高くなる、またはTsが高くなりすぎるおそれがある。
Next, the composition of the glass A of the present invention will be described. The glass A of the present invention is the glass of the present invention, and is particularly preferable when the upper ceramic layer does not impair the reflection performance of the light reflecting conductor layer and it is desired to increase the reflectance.
SiO 2 is a glass network former and is essential. If it is less than 78%, the chemical durability is lowered. Preferably it is 80% or more. If it exceeds 82%, the glass melting temperature tends to be high, or Ts tends to be too high.

 Bはガラスのネットワークフォーマであり、必須である。16%未満ではガラス溶融温度が高くなる、またはTsが高くなりすぎるおそれがあり、18%超では安定なガラスを得にくくなる、または化学的耐久性が低下するおそれがある。好ましくは17%以下である。 B 2 O 3 is a glass network former and is essential. If it is less than 16%, the glass melting temperature tends to be high or Ts tends to be too high, and if it exceeds 18%, it is difficult to obtain stable glass, or the chemical durability may be lowered. Preferably it is 17% or less.

 Alは必須ではないが、ガラスの安定性または化学的耐久性を高めるために0.5%以下の範囲で含有してもよい。0.5%超ではガラス溶融温度が高くなる、またはTsが高くなりすぎる。 Al 2 O 3 is not essential, but may be contained in a range of 0.5% or less in order to enhance the stability or chemical durability of the glass. If it exceeds 0.5%, the glass melting temperature becomes high, or Ts becomes too high.

 NaOおよびKOはTsを低下させる成分であり、少なくともいずれか一方を含有するのが好ましい。その合計が0.9%未満では、ガラス溶融温度が高くなる、またはTsが高くなりすぎるおそれがあり、好ましくは1.0%以上、より好ましくは1.5%以上である。4%超では化学的耐久性、特に耐酸性が悪化するおそれがある、または、焼成体の電気絶縁性が低下するおそれがある。好ましく3%以下、より好ましくは2%以下である。 Na 2 O and K 2 O are components that lower Ts, and preferably contain at least one of them. If the total is less than 0.9%, the glass melting temperature may be high or Ts may be too high, preferably 1.0% or more, more preferably 1.5% or more. If it exceeds 4%, chemical durability, particularly acid resistance, may be deteriorated, or the electrical insulation of the fired product may be deteriorated. Preferably it is 3% or less, More preferably, it is 2% or less.

 CaOは必須ではないが、Tsを低下させるまたはガラスを安定化させるために1%以下の範囲で含有してもよい。1%超ではガラス溶融温度が低くなりすぎる、または結晶化を促進してしまい透明なガラス層を得ることができない。好ましくは0.6%以下である。
  本発明のガラスAは本質的に上記成分からなるが、本発明の目的を損なわない範囲でその他の成分を含有してもよい。そのような成分を含有する場合、それら成分の含有量の合計は10%以下であることが好ましい。ただし、鉛酸化物は含有しない。
CaO is not essential, but may be contained in a range of 1% or less in order to lower Ts or stabilize the glass. If it exceeds 1%, the glass melting temperature becomes too low, or crystallization is promoted and a transparent glass layer cannot be obtained. Preferably it is 0.6% or less.
The glass A of the present invention consists essentially of the above components, but may contain other components as long as the object of the present invention is not impaired. When such components are contained, the total content of these components is preferably 10% or less. However, lead oxide is not contained.

 以下の方法により、下部セラミック層形成用のグリーンシートを作製した。すなわち、モル%表示で、SiOが60.4%、Bが15.6%、Alが6%、CaOが15%、KOが1%、NaOが2%、の組成となるようにガラス原料を調合、混合し、この混合された原料を白金ルツボに入れて1550~1600℃で60分間溶融後、溶融ガラスを流し出し冷却した。得られたガラスを、アルミナ製ボールミルを用いてエチルアルコール中で20~60時間粉砕し、ガラス粉末とした。粉末のD50を島津製作所社製SALD2100を用いて測定したところ2.5μmであった。軟化点Ts(単位:℃)、結晶化ピーク温度Tc(単位:℃)をブルカーAXS社製熱分析装置TG-DTA2000を用いて昇温速度10℃/分の条件で1000℃まで、測定したところ、Tsは不明瞭でありTcは850℃であった。
 質量%表示で前記ガラス粉末40%と昭和電工社製アルミナ粉末AL-45Hを60%の割合で混合した粉末50gに有機溶剤(トルエン、キシレン、2-プロパノール、2-ブタノールを質量比4:2:2:1で混合したもの)15g、可塑剤(フタル酸ジ-2-エチルヘキシル)2.5g、樹脂(デンカ社製ポリビニルブチラールPVK#3000K)5gと分散剤(ビックケミー社製DISPERBYK180)を混合してスラリーとした。このスラリーをPETフィルム上にドクターブレード法を利用して塗布し、乾燥して厚さが0.2mmの下部セラミック層形成用のグリーンシートを得た。例1~例18について、このグリーンシートを用いて下部セラミックス層を形成した。
A green sheet for forming the lower ceramic layer was produced by the following method. That is, in terms of mol%, SiO 2 is 60.4%, B 2 O 3 is 15.6%, Al 2 O 3 is 6%, CaO is 15%, K 2 O is 1%, Na 2 O is 2 Glass raw materials were prepared and mixed so as to have a composition of%, and the mixed raw materials were put in a platinum crucible and melted at 1550 to 1600 ° C. for 60 minutes, and then the molten glass was poured out and cooled. The obtained glass was pulverized in ethyl alcohol using an alumina ball mill for 20 to 60 hours to obtain a glass powder. The D 50 of the powder was 2.5μm was measured using a Shimadzu Corporation SALD2100. When the softening point Ts (unit: ° C.) and the crystallization peak temperature Tc (unit: ° C.) were measured up to 1000 ° C. at a heating rate of 10 ° C./min using a thermal analyzer TG-DTA2000 manufactured by Bruker AXS. , Ts was unclear and Tc was 850 ° C.
An organic solvent (toluene, xylene, 2-propanol, 2-butanol is used in a mass ratio of 4: 2 to 50 g of powder obtained by mixing 40% of the glass powder and 60% of alumina powder AL-45H manufactured by Showa Denko KK in mass%. : 2: 1 mixed) 15 g, plasticizer (di-2-ethylhexyl phthalate) 2.5 g, resin (Denka Polyvinyl Butyral PVK # 3000K) 5 g and dispersant (Bicchemy DISPERBYK180) were mixed. To make a slurry. This slurry was applied onto a PET film using a doctor blade method and dried to obtain a green sheet for forming a lower ceramic layer having a thickness of 0.2 mm. For Examples 1 to 18, a lower ceramic layer was formed using this green sheet.

 (例1~18)
 以下の方法により、上部セラミック層形成用のガラス-セラミックスペーストを作製した。すなわち、表1~表3の各例の通り、SiOからZrOまでの欄にモル%で示す組成となるようにそれぞれ原料を調合、混合し、それぞれの混合された原料を白金ルツボに入れて1550~1600℃で60分間溶融後、溶融ガラスを流し出し冷却した。得られたガラスを、アルミナ製ボールミルを用いてエチルアルコール中で20~60時間粉砕し、前記と同様にしてガラス粉末を得た。得られた各ガラス粉末のD50(単位:μm)を島津製作所社製SALD2100を用いて測定した。また、軟化点Ts(単位:℃)、結晶化ピーク温度Tc(単位:℃)をブルカーAXS社製熱分析装置TG-DTA2000を用いて昇温速度10℃/分の条件で1000℃まで、測定した。各組成のガラス粉末について測定されたD50(単位:μm)、軟化点Ts(単位:℃)、結晶化ピーク温度(Tc単位:℃)のそれぞれの値を表1~3の各欄に示す。Tsの欄に「不明瞭」と記載したものは、Tsを示す変曲点が不明瞭であったものである。Tcの欄に「∞」と記載したものは、1000℃までに結晶ピークが認められなかったものである。
(Examples 1 to 18)
A glass-ceramic paste for forming the upper ceramic layer was produced by the following method. That is, as shown in each example of Table 1 to Table 3, raw materials are prepared and mixed so as to have a composition represented by mol% in the columns from SiO 2 to ZrO 2 , and the mixed raw materials are put in a platinum crucible. After melting at 1550-1600 ° C. for 60 minutes, the molten glass was poured out and cooled. The obtained glass was pulverized in ethyl alcohol for 20 to 60 hours using an alumina ball mill to obtain glass powder in the same manner as described above. D 50 (unit: μm) of each glass powder obtained was measured using SALD2100 manufactured by Shimadzu Corporation. Further, the softening point Ts (unit: ° C.) and the crystallization peak temperature Tc (unit: ° C.) were measured up to 1000 ° C. at a temperature rising rate of 10 ° C./min using a Bruker AXS thermal analyzer TG-DTA2000. did. The respective values of D 50 (unit: μm), softening point Ts (unit: ° C), and crystallization peak temperature (Tc unit: ° C) measured for the glass powder of each composition are shown in the respective columns of Tables 1 to 3. . What is described as “unclear” in the column of Ts is that the inflection point indicating Ts is unclear. In the column of “Tc”, “∞” indicates that no crystal peak was observed by 1000 ° C.

 各ガラス粉末とアルミナ粉末AL-45Hを混合して、アルミナ粉末の含有量が表1~3のフィラー添加量欄に質量%で示した割合となるガラス-セラミックス混合粉末を得た。質量%表示で各混合粉末を60%、エチルセルロースとαテレピネオールを質量比85:15割合で調合した有機ビヒクルを40%としたものについて磁器乳鉢中で1時間混練を行い、さらに三本ロールにて3回分散を行ってガラス-セラミックスペーストを作製した。例1~11は本発明のガラス-セラミックスの例である。また、例1~7は本発明のガラスを用いた本発明のガラス-セラミックスの例である。 Each glass powder and alumina powder AL-45H were mixed to obtain a glass-ceramic mixed powder in which the content of the alumina powder was in the ratio indicated by mass% in the filler addition amount column of Tables 1 to 3. In a mass% display, 60% of each mixed powder, 40% of an organic vehicle prepared by mixing ethyl cellulose and α-terpineol in a mass ratio of 85:15, kneaded in a porcelain mortar for 1 hour, and further in three rolls A glass-ceramic paste was prepared by dispersing three times. Examples 1 to 11 are examples of the glass-ceramics of the present invention. Examples 1 to 7 are examples of the glass-ceramics of the present invention using the glass of the present invention.

 (セラミックス基板の作製およびその評価)
 銀粉末(大研化学工業社製S400-2)と、前記有機ビヒクルを質量比85:15割合で調合し、磁器乳鉢中で1時間混練を行い、さらに三本ロールミルを用いて分散させて銀ペーストを作製した。
(Production and evaluation of ceramic substrates)
Silver powder (S400-2 manufactured by Daiken Chemical Industry Co., Ltd.) and the above organic vehicle are mixed at a mass ratio of 85:15, kneaded for 1 hour in a porcelain mortar, and further dispersed using a three-roll mill. A paste was prepared.

 下部セラミック層形成用のグリーンシートを6枚積層した上に、上記銀ペーストを印刷し、乾燥後、例1~例18の上部セラミック層形成用の各ガラス-セラミックスペーストを銀ペースト上に印刷し、これを550℃に5時間保持して樹脂成分を分解除去した後、870℃に30分保持して焼成を行い、図1に示すように、下部セラミックス層10と銀導電体層2と上部セラミックス層が積層され、銀導体層2がその端部まで内蔵されたセラミックス基板(LTCC基板)1を得た。 The above-mentioned silver paste is printed on 6 green sheets for forming the lower ceramic layer, and after drying, each glass-ceramic paste for forming the upper ceramic layer of Examples 1 to 18 is printed on the silver paste. This was held at 550 ° C. for 5 hours to decompose and remove the resin component, then held at 870 ° C. for 30 minutes and baked, and as shown in FIG. 1, the lower ceramic layer 10, the silver conductor layer 2 and the upper portion A ceramic substrate (LTCC substrate) 1 in which a ceramic layer was laminated and the silver conductor layer 2 was built up to the end thereof was obtained.

 各LTCC基板1の主面の反射率をオーシャンオプティクス社の分光器USB2000と小型積分球ISP-RFを用いて測定し、可視光域の400~800nmの平均値を反射率(単位:%)として算出した。結果を表1~表3に示す。反射率は90%以上が好ましく、高いほど好ましい。 The reflectance of the main surface of each LTCC substrate 1 is measured using a spectroscope USB2000 of Ocean Optics and a small integrating sphere ISP-RF, and the average value of 400 to 800 nm in the visible light region is taken as the reflectance (unit:%). Calculated. The results are shown in Tables 1 to 3. The reflectance is preferably 90% or more, and the higher the reflectance.

 また、上部セラミックス層の耐酸性を以下の方法で評価した。すなわち、前記ガラス-セラミックス混合粉末4gを金型でプレスし焼成することで直径14mm、高さ1.5cmほどの焼結体を得たのち、その焼結体を、温度85℃のpH1.68シュウ酸塩緩衝液700cmの中に浸漬し1時間経過後の質量減少量を測定した。なお、浸漬後の質量は100℃で1時間乾燥してから行った。焼成体の単位表面積あたりの質量減少量(単位:μg/cm)を表1~表3の耐酸性の欄に示す。耐酸性は100μg/cm以下が好ましく、より好ましくは30μg/cm以下である。100μg/cm超ではメッキ溶液中にガラス中の成分が溶出し連続運転ができなくなったり、上部セラミックス層を浸食し光の吸収を増加させたりするおそれがある。 The acid resistance of the upper ceramic layer was evaluated by the following method. That is, 4 g of the glass-ceramic mixed powder was pressed with a die and fired to obtain a sintered body having a diameter of about 14 mm and a height of about 1.5 cm. It was immersed in 700 cm 3 of oxalate buffer and the mass loss after 1 hour was measured. In addition, the mass after immersion was performed after drying at 100 degreeC for 1 hour. The mass loss per unit surface area of the fired body (unit: μg / cm 2 ) is shown in the acid resistance column of Tables 1 to 3. The acid resistance is preferably 100 μg / cm 2 or less, more preferably 30 μg / cm 2 or less. If it exceeds 100 μg / cm 2 , components in the glass may elute in the plating solution and continuous operation may not be possible, or the upper ceramic layer may be eroded and light absorption may be increased.

 熱放散性は嶺光音電機株式会社製の熱抵抗測定器(型式:TH-2167)を用いて測定した。LEDチップは昭和電工株式会社のGQ2CR460Zを4個直列に接続し、ダイボンド材は信越化学工業株式会社のKER-3000-M2を用いた。封止剤は信越化学工業株式会社のSCR-1016Aを用いた。印加電流は35mAとし、電圧降下が飽和する時間まで通電し、降下した電圧をLEDチップの温度-電圧降下特性から導いた温度係数によって飽和温度Tj(℃)を算出した。飽和温度は50℃未満が好ましく、より好ましくは45℃以下である。50℃より高いと電圧降下が大きくなりLEDチップの光取出し効率が悪くなったり、寿命を低下させたりするおそれがある。 The heat dissipating property was measured using a thermal resistance measuring instrument (model: TH-2167) manufactured by Guangyueon Electric Co., Ltd. Four LED chips, GQ2CR460Z from Showa Denko KK were connected in series, and KE-3000-M2 from Shin-Etsu Chemical Co., Ltd. was used as the die bond material. As the sealant, SCR-1016A manufactured by Shin-Etsu Chemical Co., Ltd. was used. The applied current was set to 35 mA, current was applied until the voltage drop saturated, and the saturation temperature Tj (° C.) was calculated from the temperature coefficient derived from the temperature-voltage drop characteristics of the LED chip. The saturation temperature is preferably less than 50 ° C, more preferably 45 ° C or less. When the temperature is higher than 50 ° C., the voltage drop becomes large, and the light extraction efficiency of the LED chip may be deteriorated or the life may be shortened.

Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001

Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002

Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003

 本発明によれば、光反射率が高くかつ腐食による反射率の低下が少なく、光の取出し効率が向上された発光装置を得ることができ、かかる発光装置は、提携帯電話や大型液晶TV等のバックライト、各種照明機器等に好適に利用できる。
 なお、2009年6月23日に出願された日本特許出願2009-148577号の明細書、特許請求の範囲、図面及び要約書の全内容をここに引用し、本発明の開示として取り入れるものである。
According to the present invention, it is possible to obtain a light-emitting device that has high light reflectivity, little reduction in reflectivity due to corrosion, and improved light extraction efficiency. Such a light-emitting device can be a mobile phone, a large liquid crystal TV, or the like. It can be suitably used for various backlights and various lighting devices.
It should be noted that the entire contents of the specification, claims, drawings and abstract of Japanese Patent Application No. 2009-148577 filed on June 23, 2009 are incorporated herein by reference. .

1:セラミックス基板(LTCC基板)、2:光反射用導体層(銀導体層、導体層)、3:上部セラミックス層、4:ビア導体、5:封止樹脂層(蛍光体入り)、6:発光素子、7:ボンディングワイヤ、8:外部電極端子、9:金メッキ、10:下部セラミックス層、11:開口孔 1: ceramic substrate (LTCC substrate), 2: light reflecting conductor layer (silver conductor layer, conductor layer), 3: upper ceramic layer, 4: via conductor, 5: sealing resin layer (with phosphor), 6: Light emitting element, 7: bonding wire, 8: external electrode terminal, 9: gold plating, 10: lower ceramic layer, 11: opening hole

Claims (14)

 光反射用導体層の一部を露出するように穴部を備え 前記光反射用導体層を内蔵するセラミックス基板と、このセラミックス基板上に前記穴部を介して導通するように配置された発光素子を有する発光装置であって、前記発光素子配置面と前記光反射用導体層との間の上部セラミックス層の厚さが5~100μmであることを特徴とする発光装置。 A light emitting element provided with a hole so as to expose a part of the light reflecting conductor layer, a ceramic substrate containing the light reflecting conductor layer, and a conductive element disposed on the ceramic substrate through the hole. A light emitting device having a thickness of 5 to 100 μm of an upper ceramic layer between the light emitting element arrangement surface and the light reflecting conductor layer.  下部セラミックス層と当該下部セラミックス層面の所望領域に形成された光反射用導体層と当該光反射用導体層の少なくとも一部領域を覆って形成された上部セラミックス層とを有するセラミックス基板と、当該セラミックス基板の上部セラミックス層の上側に配置された発光素子とを備えた発光装置であって、前記上部セラミックス層の厚さが5~100μmであることを特徴とする発光装置。 A ceramic substrate having a lower ceramic layer, a light-reflecting conductor layer formed in a desired region of the surface of the lower ceramic layer, and an upper ceramic layer formed covering at least a partial region of the light-reflecting conductor layer; A light-emitting device comprising: a light-emitting element disposed on an upper ceramic layer of a substrate; wherein the upper ceramic layer has a thickness of 5 to 100 μm.  前記セラミックス基板の下部セラミックス層の前記発光素子との反対面には外部電極端子が形成されており、当該外部電極端子と前記光反射用導体層とは、下部セラミックス層に貫通して形成されたビア導体を介して導通されていることを特徴とする請求項2に記載の発光装置。 An external electrode terminal is formed on the surface of the lower ceramic layer of the ceramic substrate opposite to the light emitting element, and the external electrode terminal and the light reflecting conductor layer are formed through the lower ceramic layer. The light emitting device according to claim 2, wherein the light emitting device is electrically connected via a via conductor.  前記発光素子を包含するように形成され、かつ前記発光素子から放射される光によって励起されて可視光を発光する蛍光体を含む封止樹脂層を有する請求項1~3のいずれか1項に記載の発光装置。 The sealing resin layer including a phosphor that is formed so as to include the light emitting element and that is excited by light emitted from the light emitting element and emits visible light. The light-emitting device of description.  前記上部セラミックス層が白色である請求項1~4のいずれかに記載の発光装置。 The light emitting device according to any one of claims 1 to 4, wherein the upper ceramic layer is white.  前記上部セラミックス層が、質量%表示で40~60%のガラス成分と40~60%のセラミックスフィラー成分とを含有するガラス-セラミックスで構成されている請求項1~5のいずれか1項に記載の発光装置。 The upper ceramic layer is made of glass-ceramics containing 40 to 60% glass component and 40 to 60% ceramic filler component by mass%. Light-emitting device.  前記セラミックスフィラー成分がアルミナである請求項6に記載の発光装置。 The light-emitting device according to claim 6, wherein the ceramic filler component is alumina.  前記ガラス成分が酸化物基準のモル%表示で、SiOを62~85%、Bを5~25%、Alを0~5%、NaOおよびKOのいずれか1種以上を合計で0~5%、含有し、SiOとAlの含有量の合計が62~85%、MgO、CaO、SrOおよびBaOの群から選ばれる少なくとも1種以上を含有する場合にはその含有量の合計が10%以下のガラスである請求項6または7に記載の発光装置。 The glass component is expressed in terms of mol% based on oxide, and SiO 2 is 62 to 85%, B 2 O 3 is 5 to 25%, Al 2 O 3 is 0 to 5%, Na 2 O and K 2 O. 1 to 5% in total, and the total content of SiO 2 and Al 2 O 3 is 62 to 85%, at least one selected from the group consisting of MgO, CaO, SrO and BaO. The light-emitting device according to claim 6 or 7, wherein, if contained, the total content is glass of 10% or less.  前記ガラス成分が酸化物基準のモル%表示で、SiOを78~82%、Bを16~18%、NaOおよびKOのいずれか1種以上を合計で0.9~4%含有する請求項6~8のいずれか1項に記載の発光装置。 The glass component is expressed in mol% on the basis of oxide, and SiO 2 is 78 to 82%, B 2 O 3 is 16 to 18%, and any one or more of Na 2 O and K 2 O is 0.9 in total. The light-emitting device according to any one of claims 6 to 8, which is contained in an amount of -4%.  前記上部セラミックス層は、85℃でpH1.68のシュウ酸溶液中に1時間浸漬したときの溶出量が100μg/cm以下のガラス-セラミックスからなる請求項1~9のいずれか1項に記載の発光装置。 10. The upper ceramic layer is made of glass-ceramic having an elution amount of 100 μg / cm 2 or less when immersed in an oxalic acid solution having a pH of 1.68 at 85 ° C. for 1 hour. Light-emitting device.  発光素子の光を反射する光反射用導体層を有する発光装置用セラミックス基板において、下部セラミックス層と、当該下部セラミックス層上に位置する光反射用導体層と、当該光反射用導体層上および前記下部セラミックス層上に位置する上部セラミックス層とで構成され、前記光反射用導体層上に位置する前記上部セラミックス層に開口孔を形成した発光装置用セラミックス基板。 In a ceramic substrate for a light-emitting device having a light-reflecting conductor layer that reflects light from a light-emitting element, a lower ceramic layer, a light-reflecting conductor layer positioned on the lower ceramic layer, the light-reflecting conductor layer, and the A ceramic substrate for a light emitting device, comprising: an upper ceramic layer positioned on a lower ceramic layer; and an opening hole formed in the upper ceramic layer positioned on the light reflecting conductor layer.  前記上部セラミックス層の厚さが5μm~100μmである請求項11に記載の発光装置用セラミックス基板。 12. The ceramic substrate for a light-emitting device according to claim 11, wherein the upper ceramic layer has a thickness of 5 μm to 100 μm.  前記上部セラミックス層および前記下部セラミックス層が、質量%表示で40~60%のガラス成分と40~60%のセラミックスフィラー成分とを含有するガラス-セラミックスで構成される請求項11または12に記載の発光装置用セラミックス基板。 13. The upper ceramic layer and the lower ceramic layer are composed of glass-ceramics containing 40 to 60% glass component and 40 to 60% ceramic filler component in mass%. Ceramic substrate for light emitting devices.  前記ガラス成分が酸化物基準のモル%表示でSiOを62~85%、Bを5~25%、Alを0~5%、NaOおよびKOのいずれか1種以上を合計で0~5%、含有し、SiOとAlの含有量の合計が62~85%、MgO、CaO、SrOおよびBaOの群から選ばれる少なくとも1種以上を含有する場合にその含有量の合計が10%以下のガラスである請求項13に記載の発光装置用セラミックス基板。 The glass component is expressed in terms of mol% on the basis of oxide, and SiO 2 is 62 to 85%, B 2 O 3 is 5 to 25%, Al 2 O 3 is 0 to 5%, Na 2 O and K 2 O. 1 to 5% in total, containing at least one selected from the group consisting of MgO, CaO, SrO and BaO, the total content of SiO 2 and Al 2 O 3 being 62 to 85% The ceramic substrate for a light-emitting device according to claim 13, wherein the total content is 10% or less glass.
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