JP2001322831A - Over-coat glass and thick film printed circuit board - Google Patents
Over-coat glass and thick film printed circuit boardInfo
- Publication number
- JP2001322831A JP2001322831A JP2000144565A JP2000144565A JP2001322831A JP 2001322831 A JP2001322831 A JP 2001322831A JP 2000144565 A JP2000144565 A JP 2000144565A JP 2000144565 A JP2000144565 A JP 2000144565A JP 2001322831 A JP2001322831 A JP 2001322831A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- thick film
- sio
- film resistor
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000919 ceramic Substances 0.000 claims abstract description 33
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 38
- 239000004020 conductor Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 8
- 238000010304 firing Methods 0.000 abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000005012 migration Effects 0.000 description 8
- 238000013508 migration Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 238000009966 trimming Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Glass Compositions (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、セラミック基板上
に形成された厚膜抵抗体及び／又は厚膜導体の表面を覆
うオーバーコートガラスの特性を改善したオーバーコー
トガラス及び厚膜印刷基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an overcoated glass having improved characteristics of an overcoated glass covering the surface of a thick film resistor and / or a thick film conductor formed on a ceramic substrate, and a thick film printed substrate. It is.
【０００２】[0002]
【従来の技術】従来より、セラミック基板上に形成され
た厚膜抵抗体や厚膜導体の表面に、ガラスペーストを印
刷・焼成してオーバーコートガラスの膜を形成し、この
オーバーコートガラスで厚膜抵抗体や厚膜導体の表面を
覆うことで、厚膜抵抗体や厚膜導体の表面を絶縁保護し
て、これらの電気的特性を安定させることが行われてい
る。2. Description of the Related Art Conventionally, a glass paste is printed and fired on the surface of a thick film resistor or a thick film conductor formed on a ceramic substrate to form an overcoat glass film. By covering the surface of the film resistor or the thick film conductor, the surface of the thick film resistor or the thick film conductor is insulated and protected, and their electrical characteristics are stabilized.
【０００３】[0003]
【発明が解決しようとする課題】従来のオーバーコート
ガラスは、焼成温度や熱膨張係数等の特性を調整するた
めに、ＰｂＯを含ませるようにしているが、環境問題か
らＰｂ（鉛）の使用は好ましくない。この観点から、最
近では、Ｐｂ成分を含まないガラスをオーバーコートガ
ラスとして使用したものがあるが、従来のＰｂフリーの
ガラスは、熱膨張係数が大きいため、低熱膨張係数のセ
ラミック基板に使用すると、オーバーコートガラスの熱
膨張係数がセラミック基板のそれよりも大きくなってし
まい、セラミック基板からオーバーコートガラスに引張
力が加わるようになる。The conventional overcoat glass contains PbO in order to adjust properties such as a firing temperature and a coefficient of thermal expansion. However, the use of Pb (lead) is problematic due to environmental problems. Is not preferred. From this point of view, recently, glass containing no Pb component is used as an overcoat glass. However, conventional Pb-free glass has a large thermal expansion coefficient. The thermal expansion coefficient of the overcoat glass becomes larger than that of the ceramic substrate, and a tensile force is applied from the ceramic substrate to the overcoat glass.
【０００４】オーバーコートガラスの重要な役割は、レ
ーザートリミング時に厚膜抵抗体に生じたマイクロクラ
ックの進行を抑えて抵抗値の経時変化（ドリフト）を少
なくすることであるが、この役割を十分に果たすには、
オーバーコートガラスから厚膜抵抗体に圧縮力を作用さ
せる必要がある。しかし、従来のＰｂフリーのオーバー
コートガラスは、前述したように、セラミック基板から
オーバーコートガラスに引張力が加わるため、オーバー
コートガラスから厚膜抵抗体に作用する圧縮力が低下し
てしまい、レーザートリミング後のマイクロクラックの
進行を抑える効果が低下して、抵抗値の経時変化が大き
くなるという欠点があった。[0004] An important role of the overcoat glass is to suppress the progress of microcracks generated in the thick film resistor during laser trimming and to reduce the time-dependent change (drift) of the resistance value. To fulfill
It is necessary to apply a compressive force from the overcoat glass to the thick film resistor. However, in the conventional Pb-free overcoat glass, as described above, since a tensile force is applied to the overcoat glass from the ceramic substrate, the compressive force acting on the thick-film resistor from the overcoat glass is reduced, and the laser is not used. There is a disadvantage that the effect of suppressing the progress of the micro crack after trimming is reduced, and the change with time of the resistance value is increased.
【０００５】本発明はこのような事情を考慮してなされ
たものであり、従ってその目的は、Ｐｂ成分を使用せず
に、オーバーコートガラスの焼成温度や熱膨張係数等の
特性を適正に調整できるＰｂフリーのオーバーコートガ
ラス及び厚膜印刷基板を提供することにある。The present invention has been made in view of such circumstances, and accordingly, an object of the present invention is to appropriately adjust properties such as a sintering temperature and a thermal expansion coefficient of an overcoat glass without using a Pb component. An object of the present invention is to provide a Pb-free overcoat glass and a thick-film printed substrate that can be formed.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明で用いるオーバーコートガラスはＳｉＯ2−
Ｂ2 Ｏ3 −Ｋ2 Ｏガラスと不純物から成り、ＳｉＯ2 −
Ｂ2 Ｏ3 −Ｋ2 Ｏガラスの組成は次の通りである。 ６０ｗｔ％≦ＳｉＯ2 ≦８５ｗｔ％ １５ｗｔ％≦Ｂ2 Ｏ3 ≦３０ｗｔ％ １ｗｔ％≦Ｋ2 Ｏ≦１０ｗｔ％In order to achieve the above object, the overcoat glass used in the present invention is made of SiO 2-.
Made of B 2 O 3 —K 2 O glass and impurities, SiO 2 —
The composition of B 2 O 3 -K 2 O glass is as follows. 60 wt% ≦ SiO 2 ≦ 85 wt% 15 wt% ≦ B 2 O 3 ≦ 30 wt% 1 wt% ≦ K 2 O ≦ 10 wt%
【０００７】オーバーコートガラスは、厚膜抵抗体と同
時に焼成しても良いが、厚膜抵抗体の焼成後にオーバー
コートガラスの印刷・焼成を行う場合もあるため、オー
バーコートガラスの焼成温度は、厚膜抵抗体の焼成温度
（例えば８５０℃前後）とほぼ同じ温度か又はそれより
も低い温度に設定することが好ましい。オーバーコート
ガラスを８５０℃よりも低い温度（例えば６００〜７０
０℃）で焼成するには、オーバーコートガラスの転移点
が５５０℃以下であることが望ましい。The overcoat glass may be fired at the same time as the thick film resistor. However, since the overcoat glass may be printed and fired after firing the thick film resistor, the firing temperature of the overcoat glass is as follows. It is preferable to set the temperature approximately equal to or lower than the firing temperature of the thick film resistor (for example, around 850 ° C.). The overcoat glass is heated to a temperature lower than 850 ° C.
(0 ° C.), the transition point of the overcoat glass is desirably 550 ° C. or less.
【０００８】本発明のオーバーコートガラスとして用い
るＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガラスは、上記の組成と
することで、ガラス転移点が５５０℃以下となり、厚膜
抵抗体や厚膜導体の焼成温度よりも低い温度で焼成する
ことができる。この場合、オーバーコートガラス中のＫ
2 Ｏがガラス転移点を下げる役割を果たすため、Ｋ2 Ｏ
が１ｗｔ％よりも少ないと、ガラス転移点が５５０℃よ
りも高くなってしまい、オーバーコートガラスの焼成温
度の低温化が困難となる。Used as the overcoat glass of the present invention
SiOTwo-BTwoOThree-KTwoO glass has the above composition and
By doing so, the glass transition point becomes 550 ° C or less,
Firing at a temperature lower than the firing temperature of the resistor or thick film conductor
be able to. In this case, K in the overcoat glass
TwoSince O plays a role of lowering the glass transition point, KTwo O
Is less than 1 wt%, the glass transition point is
And the firing temperature of the overcoated glass
It is difficult to lower the temperature.
【０００９】但し、オーバーコートガラス中のＫ2 Ｏが
多くなりすぎると、オーバーコートガラスの熱膨張係数
（ＴＥＣ：coefficient of thermal expansion）が大き
くなるため、Ｋ2 Ｏの配合量を不必要に多くすることは
好ましくない。本発明のように、オーバーコートガラス
中のＫ2 Ｏの配合量が１０ｗｔ％以下であれば、オーバ
ーコートガラスの熱膨張係数が６．０×１０-6／℃以下
となる。従って、このオーバーコートガラスを低熱膨張
係数（４〜６×１０-6／℃）のセラミック基板に用いた
場合、オーバーコートガラスの熱膨張係数がセラミック
基板の熱膨張係数よりも小さくなるか、或は、オーバー
コートガラスの熱膨張係数がセラミック基板の熱膨張係
数よりも大きくなる場合でも、両者の熱膨張係数の差が
従来よりもかなり小さくなる。従って、本発明のオーバ
ーコートガラスを低熱膨張係数のセラミック基板に用い
ても、セラミック基板からオーバーコートガラスに圧縮
力が加わるか、又は僅かな引張力が加わるだけであり、
大きな引張力は加わらない。これにより、オーバーコー
トガラスがレーザートリミング後の厚膜抵抗体のマイク
ロクラックの進行を抑える役割を十分に果たし、レーザ
ートリミング後の厚膜抵抗体の抵抗値の変化を小さくす
ることができて、厚膜抵抗体の抵抗安定性を向上するこ
とができる。However, if the amount of K 2 O in the overcoat glass is too large, the coefficient of thermal expansion (TEC) of the overcoat glass increases, so that the amount of K 2 O is unnecessarily increased. Is not preferred. As in the present invention, when the blending amount of K 2 O in the overcoat glass is 10% by weight or less, the thermal expansion coefficient of the overcoat glass becomes 6.0 × 10 −6 / ° C. or less. Therefore, when this overcoat glass is used for a ceramic substrate having a low thermal expansion coefficient (4 to 6 × 10 −6 / ° C.), the thermal expansion coefficient of the overcoat glass becomes smaller than the thermal expansion coefficient of the ceramic substrate, or However, even when the thermal expansion coefficient of the overcoat glass becomes larger than the thermal expansion coefficient of the ceramic substrate, the difference between the thermal expansion coefficients of the two becomes considerably smaller than in the past. Therefore, even if the overcoat glass of the present invention is used for a ceramic substrate having a low coefficient of thermal expansion, a compressive force is applied to the overcoat glass from the ceramic substrate, or only a slight tensile force is applied,
No large tensile force is applied. As a result, the overcoat glass sufficiently plays the role of suppressing the progress of microcracks in the thick film resistor after laser trimming, and can reduce the change in the resistance value of the thick film resistor after laser trimming. The resistance stability of the film resistor can be improved.
【００１０】本発明は、厚膜抵抗体や厚膜導体の種類を
問わず適用できるが、次の組成の厚膜抵抗体を用いる
と、一層大きな効果が得られる。つまり、ＲｕＯ2 とＳ
ｉＯ2−Ｂ2 Ｏ3 −Ｋ2 Ｏガラスとを含む厚膜抵抗体を
用い、この厚膜抵抗体中のＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏ
ガラスの組成を次のように設定すると良い。 ６０ｗｔ％≦ＳｉＯ2 ≦８５ｗｔ％ １５ｗｔ％≦Ｂ2 Ｏ3 ≦４０ｗｔ％ ０．１ｗｔ％≦Ｋ2 Ｏ≦１０ｗｔ％ 不純物≦３ｗｔ％The present invention can be applied irrespective of the type of the thick film resistor or the thick film conductor. However, when a thick film resistor having the following composition is used, a greater effect can be obtained. That is, RuO 2 and S
A thick film resistor containing iO 2 —B 2 O 3 —K 2 O glass is used, and SiO 2 —B 2 O 3 —K 2 O in the thick film resistor is used.
The composition of the glass may be set as follows. 60 wt% ≦ SiO 2 ≦ 85 wt% 15 wt% ≦ B 2 O 3 ≦ 40 wt% 0.1 wt% ≦ K 2 O ≦ 10 wt% Impurities ≦ 3 wt%
【００１１】このように、本発明のオーバーコートガラ
スとほぼ同じ組成のＳｉＯ2 −Ｂ2Ｏ3 −Ｋ2 Ｏガラス
を含む厚膜抵抗体を用いれば、オーバーコートガラスと
厚膜抵抗体との密着性が良くなり、オーバーコートガラ
スによる保護効果が上がる。しかも、厚膜抵抗体に含ま
せるガラスとして、ＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガラス
を用いることで、Ｐｂ成分を使用せずに、厚膜抵抗体の
焼成温度の低温化や低熱膨張化が可能となり、品質の良
いＰｂフリーの厚膜抵抗体を形成することができる。As described above, if a thick film resistor containing SiO 2 —B 2 O 3 —K 2 O glass having substantially the same composition as the overcoat glass of the present invention is used, the overcoat glass and the thick film resistor can be combined with each other. The adhesion is improved, and the protective effect of the overcoat glass is increased. Moreover, by using SiO 2 —B 2 O 3 —K 2 O glass as the glass to be included in the thick film resistor, the firing temperature of the thick film resistor can be lowered and the thermal expansion can be reduced without using the Pb component. Thus, a high-quality Pb-free thick film resistor can be formed.
【００１２】[0012]
【発明の実施の形態】以下、本発明の一実施形態を説明
する。まず、図１に基づいて厚膜印刷基板の構造を説明
する。セラミック基板１１は、８００℃〜１０００℃で
焼成する低温焼成セラミック基板、又は、１６００℃前
後で焼成するアルミナ基板、ＡｌＮ基板等、いずれのセ
ラミック基板であっても良く、また、多層基板、単層基
板のいずれであっても良い。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below. First, the structure of a thick-film printed board will be described with reference to FIG. The ceramic substrate 11 may be any ceramic substrate, such as a low-temperature fired ceramic substrate fired at 800 ° C. to 1000 ° C., an alumina substrate fired at around 1600 ° C., or an AlN substrate. Any of the substrates may be used.
【００１３】尚、低温焼成セラミック基板を用いる場合
は、ＣａＯ−Ａｌ2 Ｏ3 −ＳｉＯ2−Ｂ2 Ｏ3 系ガラス
粉末：５０〜６５重量％（好ましくは６０重量％）とＡ
ｌ2Ｏ3 粉末：５０〜３５重量％（好ましくは４０重量
％）とを混合して作った低温焼成セラミックで形成した
基板を用いたり、或はＭｇＯ−Ａｌ2 Ｏ3 −ＳｉＯ2−
Ｂ2 Ｏ3 系のガラス粉末とＡｌ2 Ｏ3 粉末との混合物、
又は、ＳｉＯ2 −Ｂ2Ｏ3 系のガラス粉末とＡｌ2 Ｏ3
粉末との混合物等、８００〜１０００℃で焼成できる低
温焼成セラミックで形成した基板を用いれば良い。[0013] In the case of using a low-temperature fired ceramic substrate, CaO-Al 2 O 3 -SiO 2 -B 2 O 3 based glass powder: 50-65% by weight (preferably 60 wt%) and A
l 2 O 3 powder: 50-35% by weight (preferably 40 wt%) or a substrate which is formed at a low temperature fired ceramic made by mixing, or MgO-Al 2 O 3 -SiO 2 -
A mixture of B 2 O 3 -based glass powder and Al 2 O 3 powder,
Or, SiO 2 —B 2 O 3 -based glass powder and Al 2 O 3
A substrate formed of a low-temperature fired ceramic that can be fired at 800 to 1000 ° C., such as a mixture with a powder, may be used.
【００１４】このセラミック基板１１の表面には、厚膜
抵抗体１２を接続するための電極パターン１３や配線パ
ターン等の厚膜導体が印刷・焼成されている。電極パタ
ーン１３等の厚膜導体は、Ａｇ、Ａｇ／Ｐｄ、Ａｇ／Ｐ
ｔ等のＡｇ系導体、Ａｕ系導体、Ｃｕ系導体等の低融点
金属のペーストを印刷・焼成したものである。この厚膜
導体は、セラミック基板１１の焼成後に後付けで印刷・
焼成しても良いが、セラミック基板１１が低温焼成セラ
ミック基板である場合は、セラミック基板１１と厚膜導
体とを同時焼成しても良い。On the surface of the ceramic substrate 11, a thick film conductor such as an electrode pattern 13 and a wiring pattern for connecting the thick film resistor 12 is printed and fired. Thick film conductors such as the electrode pattern 13 are made of Ag, Ag / Pd, Ag / P
It is obtained by printing and firing a paste of a low melting point metal such as an Ag-based conductor, Au-based conductor, or Cu-based conductor such as t. This thick-film conductor is printed / printed after the ceramic substrate 11 is fired.
Although firing may be performed, when the ceramic substrate 11 is a low-temperature firing ceramic substrate, the ceramic substrate 11 and the thick film conductor may be fired simultaneously.
【００１５】更に、セラミック基板１１の表面には、電
極パターン１３に跨がって厚膜抵抗体１２が印刷・焼成
されている。この厚膜抵抗体１２は、ＲｕＯ2 とＳｉＯ
2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガラスとを主成分とし、ＳｉＯ2
−Ｂ2 Ｏ3 −Ｋ2 Ｏガラスの組成は、６０ｗｔ％≦Ｓｉ
Ｏ2 ≦８５ｗｔ％、１５ｗｔ％≦Ｂ2 Ｏ3 ≦４０ｗｔ
％、０．１ｗｔ％≦Ｋ2 Ｏ≦１０ｗｔ％、不純物≦３ｗ
ｔ％となっている。この厚膜抵抗体１２は、電極パター
ン１３等の厚膜導体の印刷・焼成後に印刷・焼成した
り、或は、厚膜導体と同時焼成しても良い。Further, on the surface of the ceramic substrate 11, a thick film resistor 12 is printed and fired over the electrode pattern 13. This thick film resistor 12 is made of RuO 2 and SiO
2- B 2 O 3 -K 2 O glass and SiO 2
The composition of -B 2 O 3 -K 2 O glass is 60 wt% ≦ Si
O 2 ≦ 85 wt%, 15 wt% ≦ B 2 O 3 ≦ 40 wt
%, 0.1 wt% ≦ K 2 O ≦ 10 wt%, impurities ≦ 3w
t%. The thick film resistor 12 may be printed and fired after printing and firing the thick film conductor such as the electrode pattern 13 or may be fired simultaneously with the thick film conductor.
【００１６】この厚膜抵抗体１２と電極パターン１３の
表面には、オーバーコートガラス１４が印刷・焼成さ
れ、厚膜抵抗体１２と電極パターン１３の表面全体がオ
ーバーコートガラス１４で覆われている。このオーバー
コートガラス１４は、ＳｉＯ2−Ｂ2 Ｏ3 −Ｋ2 Ｏガラ
スと不純物から成り、ＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガラ
スの組成は、６０ｗｔ％≦ＳｉＯ2 ≦８５ｗｔ％、１５
ｗｔ％≦Ｂ2 Ｏ3 ≦３０ｗｔ％、１ｗｔ％≦Ｋ2 Ｏ≦１
０ｗｔ％となっている。このオーバーコートガラス１４
は、厚膜抵抗体１２と同時焼成したり、或は、厚膜抵抗
体１２の印刷・焼成後にオーバーコートガラス１４の印
刷・焼成を行うようにしても良い。On the surfaces of the thick film resistor 12 and the electrode pattern 13, an overcoat glass 14 is printed and fired, and the entire surface of the thick film resistor 12 and the electrode pattern 13 is covered with the overcoat glass 14. . The overcoat glass 14 is composed of SiO 2 —B 2 O 3 —K 2 O glass and impurities, and the composition of the SiO 2 —B 2 O 3 —K 2 O glass is 60 wt% ≦ SiO 2 ≦ 85 wt%, 15 wt%.
wt% ≦ B 2 O 3 ≦ 30 wt%, 1 wt% ≦ K 2 O ≦ 1
0 wt%. This overcoat glass 14
May be fired at the same time as the thick film resistor 12, or the printing and firing of the overcoat glass 14 may be performed after the printing and firing of the thick film resistor 12.
【００１７】[0017]
【実施例】本発明者らは、次の表１の＃１〜＃８に示す
８種類の組成のオーバーコートガラスを用いて、図１に
示す構造の厚膜印刷基板を作製し、厚膜抵抗体１２の抵
抗安定性等を評価する試験を行った。EXAMPLES The present inventors prepared a thick-film printed circuit board having the structure shown in FIG. 1 by using overcoat glass having eight compositions shown in # 1 to # 8 in Table 1 below. A test for evaluating the resistance stability and the like of the resistor 12 was performed.
【００１８】[0018]
【表１】 [Table 1]
【００１９】この評価試験に用いたセラミック基板１１
は、ＣａＯ−Ａｌ2 Ｏ3 −ＳｉＯ2−Ｂ2 Ｏ3 系ガラス
（６０重量％）とＡｌ2 Ｏ3 粉末（４０重量％）とから
なる低温焼成セラミック基板（熱膨張係数：５．０×１
０-6／℃）を用いた。そして、焼成後の低温焼成セラミ
ック基板１１上に、Ａｇペーストで電極パターン１３等
の厚膜導体をスクリーン印刷し、乾燥させた後、該低温
焼成セラミック基板１１上に、電極パターン１３に跨が
って厚膜抵抗体１２をスクリーン印刷して乾燥させた。
この際、厚膜抵抗体１２は、ＲｕＯ2 とＳｉＯ2 −Ｂ2
Ｏ3 −Ｋ2 Ｏガラスとを主成分とする厚膜抵抗体を用い
た。この厚膜抵抗体１２と電極パターン１３の表面に、
表１の組成のオーバーコートガラス１４をスクリーン印
刷し、これらを８５０℃で同時焼成して図１に示す構造
の厚膜印刷基板を作製した。The ceramic substrate 11 used in this evaluation test
Is, CaO-Al 2 O 3 -SiO 2 -B 2 O 3 based glass (60 wt%) and Al 2 O 3 powder (40 wt%) and low-temperature fired ceramic substrate consisting of (thermal expansion coefficient: 5.0 × 1
0 −6 / ° C.). Then, a thick film conductor such as the electrode pattern 13 is screen-printed with an Ag paste on the fired low-temperature fired ceramic substrate 11, dried, and straddled over the electrode pattern 13 on the low-temperature fired ceramic substrate 11. The thick film resistor 12 was screen printed and dried.
At this time, the thick film resistor 12 is made of RuO 2 and SiO 2 -B 2
A thick film resistor mainly composed of O 3 -K 2 O glass was used. On the surface of the thick film resistor 12 and the electrode pattern 13,
The overcoat glass 14 having the composition shown in Table 1 was screen-printed, and simultaneously fired at 850 ° C. to produce a thick-film printed board having the structure shown in FIG.
【００２０】表１の＃１〜＃８のオーバーコートガラス
（ＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガラス）の組成は、６
９．６ｗｔ％≦ＳｉＯ2 ≦８１．９ｗｔ％、１５．０ｗ
ｔ％≦Ｂ2 Ｏ3 ≦２７．３ｗｔ％、１．８ｗｔ％≦Ｋ2
Ｏ≦１０．０ｗｔ％、０．９ｗｔ％≦不純物≦１．５ｗ
ｔ％である。また、熱膨張係数は、２．８〜５．５×１
０-6／℃である。The composition of overcoat glass (SiO 2 -B 2 O 3 -K 2 O glass) # 1 to # 8 in Table 1 is 6
9.6 wt% ≦ SiO 2 ≦ 81.9 wt%, 15.0 w
t% ≦ B 2 O 3 ≦ 27.3 wt%, 1.8 wt% ≦ K 2
O ≦ 10.0 wt%, 0.9 wt% ≦ impurity ≦ 1.5 w
t%. The coefficient of thermal expansion is 2.8 to 5.5 × 1.
0 -6 / ° C.
【００２１】以上のようにして、表１の＃１〜＃８のオ
ーバーコートガラスを用いて作製した７種類のサンプル
基板について、それぞれマイグレーションテストと厚膜
抵抗体の安定性を評価する試験を行ったところ、次の表
２に示す結果が得られた。As described above, a migration test and a test for evaluating the stability of the thick film resistor were performed on each of the seven types of sample substrates produced using the overcoat glasses # 1 to # 8 in Table 1. As a result, the results shown in the following Table 2 were obtained.
【００２２】[0022]
【表２】 [Table 2]
【００２３】この表２中のマイグレーションテストは、
各サンプル基板上に形成したＡｇ導体配線のマイグレー
ションをオーバーコートガラス１４で抑制する効果を評
価する試験である。このマイグレーションテストでは、
オーバーコートガラス１４で覆われた０．１５ｍｍの間
隔のＡｇ導体配線間に５Ｖの電圧を印加しながら、雰囲
気温度８５℃、湿度８５％ＲＨの環境下で５００時間放
置した後、Ａｇ導体配線間の絶縁抵抗を測定し、この絶
縁抵抗の測定値が１０12Ωよりも大きいか否かで、Ａｇ
導体配線の耐マイグレーション性を評価した。その結
果、＃１〜＃８の全てのサンプルで、Ａｇ導体配線間の
絶縁抵抗の測定値が１０12Ωよりも大きくなり、Ａｇ導
体配線の耐マイグレーション性が優れていることが確認
された。The migration test in Table 2 is as follows:
This test evaluates the effect of suppressing the migration of the Ag conductor wiring formed on each sample substrate with the overcoat glass 14. In this migration test,
While applying a voltage of 5 V between the Ag conductor wirings at intervals of 0.15 mm covered with the overcoat glass 14, the substrate was left for 500 hours in an environment of an atmosphere temperature of 85 ° C. and a humidity of 85% RH. Is measured, and whether the measured value of the insulation resistance is greater than 10 12 Ω
The migration resistance of the conductor wiring was evaluated. As a result, in all of the samples # 1 to # 8, the measured value of the insulation resistance between the Ag conductor wires was larger than 10 12 Ω, and it was confirmed that the Ag conductor wires had excellent migration resistance.
【００２４】また、厚膜抵抗体の抵抗安定性評価では、
各サンプル基板上に１．０×１．０ｍｍの四角形に形成
された厚膜抵抗体１２をレーザートリミングした後、−
５５℃〜１５０℃の温度サイクルを５００回繰り返し
て、厚膜抵抗体１２の抵抗変化率を測定した。その結
果、＃１〜＃８の全てのサンプルで、厚膜抵抗体１２の
抵抗変化率が＋０．２％〜＋０．３％となり、厚膜抵抗
体１２の抵抗安定性が優れていることが確認された。In the evaluation of the resistance stability of a thick film resistor,
After laser trimming the thick film resistor 12 formed in a square of 1.0 × 1.0 mm on each sample substrate,
The temperature cycle of 55 ° C. to 150 ° C. was repeated 500 times, and the resistance change rate of the thick film resistor 12 was measured. As a result, in all the samples # 1 to # 8, the resistance change rate of the thick-film resistor 12 is + 0.2% to + 0.3%, and the resistance stability of the thick-film resistor 12 is excellent. confirmed.
【００２５】本発明者らの試験結果によれば、オーバー
コートガラス１４（ＳｉＯ2 −Ｂ2Ｏ3 −Ｋ2 Ｏガラ
ス）の組成は、６０ｗｔ％≦ＳｉＯ2 ≦８５ｗｔ％、１
５ｗｔ％≦Ｂ2 Ｏ3 ≦３０ｗｔ％、１ｗｔ％≦Ｋ2 Ｏ≦
１０ｗｔ％の範囲内であれば、耐マイグレーション性、
抵抗安定性、熱膨張係数の全ての評価項目が要求値を満
たし、品質の良いＰｂフリーのオーバーコートガラスが
得られた。この範囲外の組成では、ガラス転移点が高く
なり、８５０℃で焼成することが困難であるか、又は、
熱膨張係数が６．０×１０-6／℃以上となり、セラミッ
ク基板の熱膨張係数よりも大きくなってしまい、セラミ
ック基板からオーバーコートガラスに引張力が加わっ
て、レーザートリミング後の厚膜抵抗体のマイクロクラ
ックの進行を抑える効果が低下してしまい、抵抗安定性
が悪化した。According to the test results of the present inventors, the composition of the overcoat glass 14 (SiO 2 —B 2 O 3 —K 2 O glass) is 60 wt% ≦ SiO 2 ≦ 85 wt%,
5 wt% ≦ B 2 O 3 ≦ 30 wt%, 1 wt% ≦ K 2 O ≦
If it is within the range of 10 wt%, migration resistance,
All the evaluation items of the resistance stability and the coefficient of thermal expansion satisfied the required values, and a high-quality Pb-free overcoat glass was obtained. If the composition is out of this range, the glass transition point becomes high, and it is difficult to fire at 850 ° C., or
The coefficient of thermal expansion is 6.0 × 10 −6 / ° C. or more, which is larger than the coefficient of thermal expansion of the ceramic substrate. A tensile force is applied from the ceramic substrate to the overcoat glass, and the thick film resistor after laser trimming is applied. In this case, the effect of suppressing the progress of microcracks was reduced, and the resistance stability was deteriorated.
【００２６】本発明は、厚膜抵抗体や厚膜導体の種類を
問わず適用できるが、本実施形態のように、ＲｕＯ2 系
の厚膜抵抗体１２に含ませるガラスとして、オーバーコ
ートガラス１４とほぼ同じ組成のＳｉＯ2 −Ｂ2 Ｏ3 −
Ｋ2 Ｏガラスを用いれば、オーバーコートガラス１４と
厚膜抵抗体１２との密着性が良くなり、オーバーコート
ガラス１４による保護効果が上がる。しかも、厚膜抵抗
体１２中のガラスとして、ＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏ
ガラスを用いれば、Ｐｂ成分を使用せずに、厚膜抵抗体
１２の焼成温度の低温化や低熱膨張化が可能となり、品
質の良いＰｂフリーの厚膜抵抗体１２を形成することが
できる。The present invention can be applied to any type of thick-film resistor or thick-film conductor, but as in the present embodiment, the overcoat glass 14 is used as the glass contained in the RuO 2 -based thick-film resistor 12. SiO 2 —B 2 O 3 — having almost the same composition as
When K 2 O glass is used, the adhesion between the overcoat glass 14 and the thick film resistor 12 is improved, and the protection effect of the overcoat glass 14 is improved. Moreover, as the glass in the thick film resistor 12, SiO 2 —B 2 O 3 —K 2 O
If glass is used, the firing temperature of the thick film resistor 12 can be lowered and the thermal expansion can be reduced without using a Pb component, and a high-quality Pb-free thick film resistor 12 can be formed.
【００２７】尚、厚膜抵抗体１２に含ませるＲｕＯ
2 は、比表面積が３０〜８０ｍ2 ／ｇのものを使用する
と良い。つまり、ＲｕＯ2 は、比表面積が小さくなるほ
ど、電荷が集中しやすくなり、ＥＳＤ（electro static
discharge）特性が低下する傾向がある。本発明者の試
験結果によれば、ＲｕＯ2 の比表面積が３０ｍ2 ／ｇ以
上であれば、好ましいＥＳＤ特性を確保することができ
る。しかし、ＲｕＯ2 の比表面積が８０ｍ2 ／ｇを越え
ると、ＲｕＯ2 の酸化触媒作用が強くなって、有機物を
自然発火させるおそれがあるため、ＲｕＯ2 の比表面積
は８０ｍ2 ／ｇ以下であることが好ましい。Note that RuO contained in the thick film resistor 12 is
It is good to use 2 having a specific surface area of 30 to 80 m 2 / g. That is, in RuO 2 , as the specific surface area becomes smaller, charges are more likely to concentrate, and the ESD (electrostatic
discharge) characteristics tend to decrease. According to the test results of the present inventors, if the specific surface area of RuO 2 is 30 m 2 / g or more, preferable ESD characteristics can be secured. However, the specific surface area of RuO 2 exceeds 80 m 2 / g, the oxidation catalysis of RuO 2 and becomes stronger, because organics which may be pyrophoric, the specific surface area of RuO 2 or less 80 m 2 / g Is preferred.
【００２８】また、ＲｕＯ2 の表面に、ＲｕＯ2 ：１０
０ｗｔ％に対して、０．８〜４ｗｔ％のＫ2 Ｏを付着さ
せても良い。ＲｕＯ2 の表面のＫ2 ＯはＳｉＯ2 −Ｂ2
Ｏ3−Ｋ2 ＯガラスとＲｕＯ2 との濡れ性を向上させ、
ガラスを介して得られる導通を安定させて、焼成温度の
変化による抵抗値変化（焼成温度依存性）を小さくする
役割を果たすと共に、電荷の集中を防止して、ＥＳＤ特
性を向上させる役割も果たす。[0028] In addition, on the surface of RuO 2, RuO 2: 10
0.8 to 4 wt% of K 2 O may be attached to 0 wt%. K 2 O on the surface of RuO 2 is SiO 2 -B 2
Improves the wettability between O 3 -K 2 O glass and RuO 2 ,
It stabilizes conduction obtained through glass, reduces the change in resistance value (dependence on firing temperature) due to the change in firing temperature, and also plays a role in preventing charge concentration and improving ESD characteristics. .
【００２９】更に、この厚膜抵抗体には、遷移金属の酸
化物とＢ2 Ｏ3 とを含有する添加ガラスを厚膜抵抗体に
添加するようにしても良い。この添加ガラス中の遷移金
属を含む硼酸塩は、電子伝導による導電性があり、半導
体的性質を示す。従って、この添加ガラスは、サージ電
圧が印加されたときに、電荷が局部的に集中するのを防
ぎ、厚膜抵抗体のガラスの破壊を防止する役割を果た
す。この特性から、シート抵抗値が大きい場合には、添
加ガラスの添加効果が大きくなる。但し、この添加ガラ
スは半導体的性質を示すため、抵抗温度係数がマイナス
にシフトする。従って、抵抗温度係数とＥＳＤ特性の両
方を満足させるには、例えば１００ｋΩ／□の厚膜抵抗
体の場合、添加ガラスの添加量を３〜１５ｗｔ％にする
ことが好ましい。Further, an additional glass containing an oxide of a transition metal and B 2 O 3 may be added to the thick film resistor. The borate containing the transition metal in the added glass has conductivity due to electron conduction and exhibits semiconductor properties. Therefore, when the surge voltage is applied, the added glass prevents charges from being locally concentrated, and serves to prevent the glass of the thick film resistor from being broken. From this characteristic, when the sheet resistance value is large, the effect of adding the added glass increases. However, since the added glass exhibits semiconductor properties, the temperature coefficient of resistance shifts to a negative value. Therefore, in order to satisfy both the temperature coefficient of resistance and the ESD characteristics, for example, in the case of a thick film resistor of 100 kΩ / □, it is preferable that the addition amount of the additional glass is 3 to 15 wt%.
【００３０】更に、この厚膜抵抗体には、５ｗｔ％以下
の遷移金属酸化物を添加しても良い。厚膜抵抗体への遷
移金属酸化物の添加量が５ｗｔ％以下であれば、遷移金
属酸化物の添加量を調整することで、厚膜抵抗体の抵抗
温度係数を任意に調整することができる。Further, a transition metal oxide of 5 wt% or less may be added to the thick film resistor. When the addition amount of the transition metal oxide to the thick film resistor is 5 wt% or less, the temperature coefficient of resistance of the thick film resistor can be arbitrarily adjusted by adjusting the addition amount of the transition metal oxide. .
【００３１】また、この厚膜抵抗体中のＳｉＯ2 −Ｂ2
Ｏ3 −Ｋ2 Ｏガラスに、ＺｒＯ2 粒子を１〜２０ｗｔ％
添加しても良い。このＺｒＯ2 粒子は、ガラスよりも熱
伝導率が大きく、しかも、厚膜抵抗体の焼成温度（９０
０℃以下）ではＺｒＯ2 粒子とＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ
2 Ｏガラスとが反応しないため、ＳｉＯ2 −Ｂ2 Ｏ3−
Ｋ2 Ｏガラスに適量のＺｒＯ2 粒子を添加すれば、厚膜
抵抗体の電気的特性を劣化させることなく、厚膜抵抗体
の熱伝導率を大きくして放熱性を高めることができ、耐
電力性を向上させることが可能となる。The SiO 2 -B 2 in this thick film resistor is
1 to 20 wt% of ZrO 2 particles in O 3 -K 2 O glass
It may be added. These ZrO 2 particles have a higher thermal conductivity than glass and have a thick film resistor firing temperature (90 ° C.).
0 ° C. or lower), ZrO 2 particles and SiO 2 —B 2 O 3 —K
Since it does not react with 2 O glass, SiO 2 —B 2 O 3 −
When an appropriate amount of ZrO 2 particles is added to the K 2 O glass, the heat conductivity of the thick film resistor can be increased and the heat dissipation can be improved without deteriorating the electrical characteristics of the thick film resistor. It is possible to improve the power performance.
【００３２】[0032]
【発明の効果】以上の説明から明らかなように、本発明
によれば、オーバーコートガラスとしてＳｉＯ2 −Ｂ2
Ｏ3 −Ｋ2 Ｏガラスを用いると共に、このＳｉＯ2 −Ｂ
2 Ｏ3−Ｋ2 Ｏガラスの組成を６０ｗｔ％≦ＳｉＯ2 ≦
８５ｗｔ％、１５ｗｔ％≦Ｂ2Ｏ3 ≦３０ｗｔ％、１ｗ
ｔ％≦Ｋ2 Ｏ≦１０ｗｔ％の範囲に設定したので、Ｐｂ
成分を使用せずに、オーバーコートガラスの焼成温度、
熱膨張係数、耐マイグレーション性、厚膜抵抗体の抵抗
安定性の全ての評価項目の要求値を満足することがで
き、品質の良いＰｂフリーのオーバーコートガラスを製
造できる。As is clear from the above description, according to the present invention, SiO 2 -B 2 is used as the overcoat glass.
With use of the O 3 -K 2 O glass, the SiO 2 -B
The composition of the 2 O 3 -K 2 O glass is 60 wt% ≦ SiO 2 ≦
85 wt%, 15 wt% ≦ B 2 O 3 ≦ 30 wt%, 1w
t% ≦ K 2 O ≦ 10 wt%, so that Pb
The baking temperature of overcoat glass,
The thermal expansion coefficient, the migration resistance, and the resistance stability of the thick film resistor can be satisfied with all the required evaluation values, and a high-quality Pb-free overcoat glass can be manufactured.
【００３３】更に、本発明のオーバーコートガラスとほ
ぼ同じ組成のＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガラスを含む
厚膜抵抗体を用いれば、上記の効果を更に大きくするこ
とができる。Further, if a thick film resistor containing SiO 2 -B 2 O 3 -K 2 O glass having substantially the same composition as that of the overcoat glass of the present invention is used, the above effect can be further enhanced.
【図１】本発明の一実施形態を示す厚膜印刷基板の主要
部の縦断面図FIG. 1 is a longitudinal sectional view of a main part of a thick film printed circuit board according to an embodiment of the present invention.
１１…セラミック基板、１２…厚膜抵抗体、１３…電極
パターン（厚膜導体） 、１４…オーバーコートガラス。11: ceramic substrate, 12: thick film resistor, 13: electrode pattern (thick film conductor), 14: overcoat glass.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G062 AA08 BB05 DA06 DA07 DB01 DC04 DC05 DD01 DE01 DF01 EA01 EB01 EC02 EC03 ED01 EE01 EF01 EG01 FA01 FA10 FB01 FC01 FD01 FE01 FF01 FG01 FH01 FJ01 FK01 FL01 GA01 GA10 GB01 GC01 GD01 GE01 HH01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM05 NN26 NN29 5E314 AA03 AA10 DD06 FF02 FF12 FF14 FF24 GG05 GG09 GG11 GG21 GG26 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G062 AA08 BB05 DA06 DA07 DB01 DC04 DC05 DD01 DE01 DF01 EA01 EB01 EC02 EC03 ED01 EE01 EF01 EG01 FA01 FA10 FB01 FC01 FD01 FE01 FF01 FG01 FH01 FJ01 F0101 01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM05 NN26 NN29 5E314 AA03 AA10 DD06 FF02 FF12 FF14 FF24 GG05 GG09GG11
Claims (4)
体及び／又は厚膜導体の表面を覆うオーバーコートガラ
スであって、 ＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガラスと不純物から成り、 前記ＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガラスの組成は、 ６０ｗｔ％≦ＳｉＯ2 ≦８５ｗｔ％ １５ｗｔ％≦Ｂ2 Ｏ3 ≦３０ｗｔ％ １ｗｔ％≦Ｋ2 Ｏ≦１０ｗｔ％ であることを特徴とするオーバーコートガラス。An overcoat glass for covering a surface of a thick film resistor and / or a thick film conductor formed on a ceramic substrate, wherein the overcoat glass comprises SiO 2 —B 2 O 3 —K 2 O glass and impurities, The composition of the SiO 2 —B 2 O 3 —K 2 O glass is 60 wt% ≦ SiO 2 ≦ 85 wt% 15 wt% ≦ B 2 O 3 ≦ 30 wt% 1 wt% ≦ K 2 O ≦ 10 wt%. Overcoat glass.
体及び／又は厚膜導体の表面にオーバーコートガラスの
膜を形成してなる厚膜印刷基板において、 前記オーバーコートガラスは、ＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ
2 Ｏガラスと不純物から成り、 前記ＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガラスの組成は、 ６０ｗｔ％≦ＳｉＯ2 ≦８５ｗｔ％ １５ｗｔ％≦Ｂ2 Ｏ3 ≦３０ｗｔ％ １ｗｔ％≦Ｋ2 Ｏ≦１０ｗｔ％ であることを特徴とする厚膜印刷基板。2. A thick-film printed board comprising a thick-film resistor and / or a thick-film conductor formed on a ceramic substrate and an overcoat glass film formed on the surface thereof, wherein the overcoat glass is made of SiO 2 — B 2 O 3 -K
Made 2 O glass and impurity, the SiO 2 -B 2 O 3 -K 2 Composition of O glass, 60wt% ≦ SiO 2 ≦ 85wt % 15wt% ≦ B 2 O 3 ≦ 30wt% 1wt% ≦ K 2 O ≦ A thick film printed board characterized by being 10 wt%.
は前記セラミック基板の熱膨張係数よりも小さいことを
特徴とする請求項２に記載の厚膜印刷基板。3. The thick film printed circuit board according to claim 2, wherein the coefficient of thermal expansion of the overcoat glass is smaller than the coefficient of thermal expansion of the ceramic substrate.
−Ｂ2 Ｏ3 −Ｋ2 Ｏガラスとを含み、 該厚膜抵抗体に含まれるＳｉＯ2 −Ｂ2 Ｏ3 −Ｋ2 Ｏガ
ラスの組成は、 ６０ｗｔ％≦ＳｉＯ2 ≦８５ｗｔ％ １５ｗｔ％≦Ｂ2 Ｏ3 ≦４０ｗｔ％ ０．１ｗｔ％≦Ｋ2 Ｏ≦１０ｗｔ％ 不純物≦３ｗｔ％ であり、該厚膜抵抗体上に前記オーバーコートガラスの
膜が形成されていることを特徴とする請求項２又は３に
記載の厚膜印刷基板。4. The thick-film resistor comprises RuO 2 and SiO 2
-B 2 O 3 -K 2 O glass, and the composition of the SiO 2 -B 2 O 3 -K 2 O glass contained in the thick film resistor is 60 wt% ≦ SiO 2 ≦ 85 wt% 15 wt% ≦ B 3. 2 O 3 ≦ 40 wt% 0.1 wt% ≦ K 2 O ≦ 10 wt% Impurities ≦ 3 wt%, and the film of the overcoat glass is formed on the thick film resistor. Or the thick-film printed board according to 3.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000144565A JP2001322831A (en) | 2000-05-12 | 2000-05-12 | Over-coat glass and thick film printed circuit board |
| DE60021828T DE60021828D1 (en) | 1999-10-28 | 2000-10-25 | Thick film resistor and ceramic substrate |
| EP00122380A EP1096512B1 (en) | 1999-10-28 | 2000-10-25 | Thick-film resistor and ceramic circuit board |
| US09/697,150 US6544654B1 (en) | 1999-10-28 | 2000-10-27 | Thick-film resistor and ceramic circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000144565A JP2001322831A (en) | 2000-05-12 | 2000-05-12 | Over-coat glass and thick film printed circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001322831A true JP2001322831A (en) | 2001-11-20 |
Family
ID=18651208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000144565A Pending JP2001322831A (en) | 1999-10-28 | 2000-05-12 | Over-coat glass and thick film printed circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001322831A (en) |
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| WO2010150830A1 (en) * | 2009-06-23 | 2010-12-29 | 旭硝子株式会社 | Light-emitting device |
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| KR101235489B1 (en) | 2008-08-21 | 2013-02-20 | 아사히 가라스 가부시키가이샤 | Light-emitting device |
| JP2012191218A (en) * | 2008-08-21 | 2012-10-04 | Asahi Glass Co Ltd | Light-emitting element mounting substrate |
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| WO2010021367A1 (en) * | 2008-08-21 | 2010-02-25 | 旭硝子株式会社 | Light-emitting device |
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| WO2010084813A1 (en) * | 2009-01-20 | 2010-07-29 | 株式会社村田製作所 | Multilayer ceramic electronic component and method for manufacturing same |
| WO2010150830A1 (en) * | 2009-06-23 | 2010-12-29 | 旭硝子株式会社 | Light-emitting device |
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