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WO2010099998A2 - Procédé pour produire des composants semi-conducteurs à l'aide de techniques de dopage - Google Patents

Procédé pour produire des composants semi-conducteurs à l'aide de techniques de dopage Download PDF

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Publication number
WO2010099998A2
WO2010099998A2 PCT/EP2010/050765 EP2010050765W WO2010099998A2 WO 2010099998 A2 WO2010099998 A2 WO 2010099998A2 EP 2010050765 W EP2010050765 W EP 2010050765W WO 2010099998 A2 WO2010099998 A2 WO 2010099998A2
Authority
WO
WIPO (PCT)
Prior art keywords
metallization
selectively doped
solar cell
doped structure
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/050765
Other languages
German (de)
English (en)
Other versions
WO2010099998A3 (fr
Inventor
Tobias WÜTHERICH
Mathias Weiss
Jan Lossen
Karsten Meyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bosch Solar Energy AG
Original Assignee
Bosch Solar Energy AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Solar Energy AG filed Critical Bosch Solar Energy AG
Priority to CN2010800103050A priority Critical patent/CN103119724A/zh
Priority to JP2011552371A priority patent/JP2012519385A/ja
Priority to EP10704123A priority patent/EP2404322A2/fr
Publication of WO2010099998A2 publication Critical patent/WO2010099998A2/fr
Publication of WO2010099998A3 publication Critical patent/WO2010099998A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for the production of semiconductor devices using doping techniques, wherein during the processing a sequence of layers is generated, which are to be positioned exactly to each other, in particular a method for producing a silicon solar cell with selective emitter and metallization for contact finger generation, said the emitter regions below the contact fingers have a locally high doping concentration, according to the preamble of patent claims 1 and 4, respectively.
  • a method for manufacturing a silicon solar cell with selective emitter comprises the method steps of producing a planar emitter on an emitter surface of a solar cell substrate, applying an etching barrier to first portions of the emitter surface, etching the emitter surface in second portions of the emitter surface not covered by the etching barrier, removing the etching barrier and producing metal contacts the first subareas.
  • an emitter is firstly produced on at least one surface of a solar cell substrate having a homogeneous doping concentration which is high enough that it is suitable for contact by the screen printing method.
  • the problem is the exact positioning of the metal contacts on the above-mentioned first portions.
  • wafers are adjusted at different process steps in the respective production plant, so that the structures produced in the individual process steps can be aligned with each other.
  • it is possible either to align the wafers mechanically by stops or to determine the position of special reference points in the installation and to align the process with the aid of camera systems operating in the visual area.
  • the reference points used are usually the edges of the wafer or specially applied markings.
  • Exact positioning is crucial in the production of highly efficient solar cells, as the structures, which are only a few micrometers wide at certain process steps, have to be positioned exactly in order to achieve the desired function and high efficiency of the solar cell.
  • the second heating is locally realized by passing a beam of a laser over the surface of the device where metallization is to be applied. To one To prevent excessive ablation during the heating step, it is necessary to defocus the laser.
  • the contact structure is realized by generating a metallic vapor in the region of the substrate, wherein a mask which partially shields the substrate against the metallic vapor is provided having a contact structure, i. H. having corresponding openings.
  • This mask is then moved in sections through the metallic vapor, with the movement of the mask through the metallic vapor relative to the substrate.
  • the positioning accuracy between the substrate and the mask is limited, so that in the end, in order to achieve contactable emitters, they must be sufficiently wide and have a locally strong doping.
  • the difficulty in positioning the metallization to make a front-side contact structure results in having to choose or choose the area of high doping wider, based on the actual metallization paths. This basically has a detrimental effect on the achievable efficiencies of manufactured solar cells, but ensures that the metallization actually comes to lie exclusively on the highly doped regions.
  • the core idea of the invention is to determine a selectively doped structure or a doping gradient produced in the semiconductor substrate by means of an infrared-sensitive camera device in its position in the substrate and to use the position thus found directly or indirectly for the adjustment of the following processing step.
  • the selectively doped emitter structure produced in a known manner is itself used to position the z. B. screen mask respectively the metal grid used.
  • a direct adjustment is made.
  • To make the selectively doped structure visible it is heated or exposed to an infrared, in particular NIR radiation.
  • an infrared, in particular NIR radiation In this way it is possible to visualize the selectively doped structure, which can not be determined in the visible range of the light, for an IR-sensitive camera device.
  • a referencing can take place directly on the recognized, visualized structure of the emitter regions.
  • the prior art corresponding indirect adjustment to third features, eg. As wafer edges or alignment marks, which always entails a chain of tolerances, omitted in the inventive solution.
  • the Alignmentproblem is not limited to a metallization, but also occurs in other manufacturing steps, for.
  • the processing of highly doped areas on the back of a back-side contact cell can be used for the adjustment of the n-high doping on the existing p-high doping or vice versa.
  • the wafer can be subjected to IR transmitted light or IR incident light irradiation and the transmitted or emitted IR radiation can be used to visualize the selectively doped structure in order to adjust the z. B. screen print mask.
  • the selectively doped structure with reduced dimensions, ie. H. the doped surface remains exactly limited to the area of the subsequently applied metallization, which increases the efficiency and the efficiency of a solar cell produced in this way.
  • FIG. 1 shows a principle arrangement for implementing the method for producing a silicon solar cell, wherein the selectively doped emitter areas are visualized for adjusting the screen-printing mask for the generation of the contact fingers, and
  • FIG. 2 shows real images of a visualized doping structure of a wafer, wherein it can be seen that the highly doped region absorbs a larger proportion of IR radiation.
  • a screen-printed solar cell with a selective emitter is assumed.
  • This doping can first be generated as a homogeneous weak doping by gas phase diffusion in a tube furnace. In a next step, those areas are then masked, which should remain weak doped. By a further gas phase diffusion then the non-masked areas are subjected to a high doping.
  • a full-area antireflection coating is produced.
  • the metallization is applied by screen printing and made by sintering an electrical connection to the underlying emitter.
  • the screen mask is to be aligned exactly to the highly doped areas, so that the pressure of the contact fingers can be done with high accuracy.
  • the selectively doped structure is determined by means of an IR-sensitive camera device in its position in the wafer and then aligned directly the screen printing mask using the visualized position.
  • the visualization of the position of the selectively doped structure can be carried out with an arrangement according to FIG.
  • a radiation source 2 is arranged, which emits the IR radiation.
  • an IR-sensitive camera 3 is able to visualize the selective emitter structure, so that the positioning of the screen mask for the step of generating the metal contact fingers can be done with high accuracy.
  • the image taken by the IR camera 3 of the highly doped region of the emitter regions is shown in the illustrations according to FIG. 2. It becomes clear that the highly doped emitter region absorbs more infrared radiation, which can be visualized by the IR camera 3 and a suitable display device.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé pour produire des composants semi-conducteurs à l'aide de techniques de dopage, une série de couches étant générée pendant le traitement et ces couches devant être positionnées entre elles avec précision. Selon l'invention, la position d'une structure sélectivement dopée, générée dans le substrat semi-conducteur est déterminée, au moyen d'un dispositif de caméra sensible aux infrarouges, la position ainsi détectée étant utilisée de manière directe ou indirecte pour l'alignement lors de l'étape de traitement suivante.
PCT/EP2010/050765 2009-03-04 2010-01-25 Procédé pour produire des composants semi-conducteurs à l'aide de techniques de dopage Ceased WO2010099998A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2010800103050A CN103119724A (zh) 2009-03-04 2010-01-25 利用掺杂技术制造半导体器件的方法
JP2011552371A JP2012519385A (ja) 2009-03-04 2010-01-25 ドーピング技術を用いた半導体素子の製造方法
EP10704123A EP2404322A2 (fr) 2009-03-04 2010-01-25 Procédé pour produire des composants semi-conducteurs à l'aide de techniques de dopage

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102009011640.0 2009-03-04
DE102009011640 2009-03-04
DE102009018653.0 2009-04-23
DE102009018653.0A DE102009018653B4 (de) 2009-03-04 2009-04-23 Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken

Publications (2)

Publication Number Publication Date
WO2010099998A2 true WO2010099998A2 (fr) 2010-09-10
WO2010099998A3 WO2010099998A3 (fr) 2011-04-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/050765 Ceased WO2010099998A2 (fr) 2009-03-04 2010-01-25 Procédé pour produire des composants semi-conducteurs à l'aide de techniques de dopage

Country Status (5)

Country Link
EP (1) EP2404322A2 (fr)
JP (1) JP2012519385A (fr)
CN (1) CN103119724A (fr)
DE (1) DE102009018653B4 (fr)
WO (1) WO2010099998A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084293B2 (en) 2010-04-06 2011-12-27 Varian Semiconductor Equipment Associates, Inc. Continuously optimized solar cell metallization design through feed-forward process
JP2013229466A (ja) * 2012-04-26 2013-11-07 Shin Etsu Chem Co Ltd 太陽電池セル及びその製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8895325B2 (en) 2012-04-27 2014-11-25 Varian Semiconductor Equipment Associates, Inc. System and method for aligning substrates for multiple implants
JP6821473B2 (ja) * 2017-03-07 2021-01-27 株式会社アルバック バックコンタクト型結晶系太陽電池の製造方法およびマスク
CN109004067A (zh) * 2018-09-26 2018-12-14 浙江晶科能源有限公司 一种n型太阳能电池制备方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
DE69915317T2 (de) 1998-06-29 2005-02-17 Unisearch Ltd., Sydney Selbstjustierendes verfahren zur herstellung eines selektiven emitters und der metallisierung in einer solarzelle
DE102006055862A1 (de) 2006-11-22 2008-05-29 Q-Cells Ag Verfahren und Vorrichtung zum Herstellen einer elektrischen Solarzellen-Kontaktstruktur an einem Substrat
DE102007035068A1 (de) 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Fertigen einer Silizium-Solarzelle mit einem selektiven Emitter sowie entsprechende Solarzelle

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US4534804A (en) * 1984-06-14 1985-08-13 International Business Machines Corporation Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer
JPH04115517A (ja) * 1990-09-05 1992-04-16 Mitsubishi Electric Corp 位置合せマーク形成方法
US5883518A (en) * 1996-04-24 1999-03-16 Boxer Cross, Inc. System and method for measuring the doping level and doping profile of a region in a semiconductor substrate
EP0851511A1 (fr) * 1996-12-24 1998-07-01 IMEC vzw Dispositif semi-conducteur avec deux régions diffusées sélectivement
WO2000054031A1 (fr) * 1999-03-06 2000-09-14 Zettner Juergen Procede de caracterisation des proprietes electroniques d'un semi-conducteur
KR100540865B1 (ko) * 2002-11-06 2006-01-11 삼성전자주식회사 농도 측정방법 및 이를 이용한 반도체 소자의 불순물 농도측정방법
WO2005017996A1 (fr) * 2003-03-14 2005-02-24 Andreas Mandelis Procede de radiometrie de porteurs de semi-conducteurs
US7557359B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7190458B2 (en) * 2003-12-09 2007-03-13 Applied Materials, Inc. Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity
US7697146B2 (en) * 2005-02-24 2010-04-13 Dcg Systems, Inc. Apparatus and method for optical interference fringe based integrated circuit processing
US20100154870A1 (en) * 2008-06-20 2010-06-24 Nicholas Bateman Use of Pattern Recognition to Align Patterns in a Downstream Process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69915317T2 (de) 1998-06-29 2005-02-17 Unisearch Ltd., Sydney Selbstjustierendes verfahren zur herstellung eines selektiven emitters und der metallisierung in einer solarzelle
DE102006055862A1 (de) 2006-11-22 2008-05-29 Q-Cells Ag Verfahren und Vorrichtung zum Herstellen einer elektrischen Solarzellen-Kontaktstruktur an einem Substrat
DE102007035068A1 (de) 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Fertigen einer Silizium-Solarzelle mit einem selektiven Emitter sowie entsprechende Solarzelle

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084293B2 (en) 2010-04-06 2011-12-27 Varian Semiconductor Equipment Associates, Inc. Continuously optimized solar cell metallization design through feed-forward process
JP2013229466A (ja) * 2012-04-26 2013-11-07 Shin Etsu Chem Co Ltd 太陽電池セル及びその製造方法

Also Published As

Publication number Publication date
EP2404322A2 (fr) 2012-01-11
CN103119724A (zh) 2013-05-22
DE102009018653B4 (de) 2015-12-03
JP2012519385A (ja) 2012-08-23
WO2010099998A3 (fr) 2011-04-28
DE102009018653A1 (de) 2010-09-16

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