WO2010073583A1 - Adhesive film, multilayer circuit substrate, component for semiconductor, and semiconductor device - Google Patents

Abstract

Disclosed is an adhesive film characterized by containing: a thermosetting resin with a weight-average molecular weight of less than 1000; a film-forming resin; an oligomer compound having a weight-average molecular weight smaller than that of the film-forming resin and having a weight-average molecular weight larger than that of the thermosetting resin; and a flux activation compound.

Description

Adhesive film, multilayer circuit board, semiconductor component and semiconductor device

The present invention relates to an adhesive film, a multilayer circuit board, a semiconductor component, and a semiconductor device.

In recent years, electronic devices such as semiconductor packages have been integrated with higher density and higher density in response to demands for higher functionality and lighter, thinner and smaller electronic devices. These electronic components have become smaller and more pins. It is out. Solder bonding is used to obtain an electrical connection between these electronic components. Examples of the solder bonding include a conductive bonding portion between semiconductor elements, a conductive bonding portion between a semiconductor element such as a package mounted on a flip chip and a circuit board, a conductive bonding portion between circuit boards, and the like. In order to ensure electrical connection strength and mechanical connection strength, a sealing resin generally referred to as underfill is injected into this solder joint (underfill sealing).

When the gap (gap) generated by the solder joint is reinforced with a liquid sealing resin (underfill material), the liquid sealing resin (underfill material) is supplied after the solder joint, and the solder is bonded by curing it. The part is reinforced. However, as electronic parts become thinner and smaller, the solder joints are narrowed in pitch / narrow gap, so even if liquid sealing resin (underfill material) is supplied after soldering, the liquid sealing between the gaps There is a problem that the stop resin (underfill material) does not spread and it becomes difficult to completely fill the resin.

For such a problem, a method is known in which electrical connection and sealing between terminals are collectively performed through an anisotropic conductive film. For example, a method is described in which an adhesive film containing solder particles is interposed between members and thermocompression bonded so that the solder particles are interposed between the electrical connection portions of both members and the resin component is filled in the other portions ( For example, see Patent Document 1).

However, with this method, it is difficult to ensure electrical connection reliability and ion migration resistance of the resin after sealing.

JP-A 61-276873

An object of the present invention is to provide an adhesive film, a multilayer circuit board, a semiconductor component, and a semiconductor device that are excellent in electrical connection reliability and ion migration resistance of a resin after sealing.

Such an object is achieved by the present invention described in the following (1) to (24).

(1)
A thermosetting resin having a weight average molecular weight of less than 1,000;
A film-forming resin;
An oligomer compound having a weight average molecular weight smaller than that of the film-forming resin and having a weight average molecular weight larger than that of the thermosetting resin;
A flux active compound;
Including an adhesive film.
(2)
The adhesive film according to (1), wherein the oligomer compound has a weight average molecular weight of 1,000 or more and 15,000 or less.
(3)
The adhesive film according to (1) or (2), wherein the oligomer compound includes at least one selected from the group consisting of an acrylic resin, an epoxy resin, and a phenol resin.
(4)
The adhesive film according to any one of (1) to (3), wherein the film-forming resin includes an acrylic resin or a phenoxy resin.
(5)
The adhesive film according to any one of (1) to (4), wherein the film-forming resin has a weight average molecular weight of 20,000 or more.
(6)
The adhesive film according to any one of (1) to (5), wherein the thermosetting resin includes an epoxy resin and a phenol resin.
(7)
The adhesive film according to (6), wherein the oligomer compound has a group that reacts with the epoxy resin or the fail resin.
(8)
The adhesive film according to (6) or (7), wherein the film-forming resin has a group that reacts with the epoxy resin or the fail resin.
(9)
From (1), the content of the oligomer compound is 1% by weight or more and 30% by weight or less of the entire resin composition including the thermosetting resin, the film-forming resin, the oligomer compound, and the flux active compound. The adhesive film according to any one of (8).
(10)
The content of the film-forming resin is 10% by weight or more and 50% by weight or less of the total resin composition including the thermosetting resin, the film-forming resin, the oligomer compound, and the flux active compound. ) To (9).
(11)
The adhesive film according to any one of (1) to (10), wherein the oligomer compound is compatible with the film-forming resin.
(12)
The adhesive film according to any one of (1) to (11), wherein a melt viscosity at 150 ° C. is 10 Pa · s or more and 1,000 Pa · s or less.
(13)
The adhesive film according to any one of (1) to (12), wherein the minimum melt viscosity is 0.1 Pa · s or more and 10,000 Pa · s or less.
(14)
The ratio (Wa) of the content Wa of the film forming resin and the content Wb of the oligomer compound of the entire resin composition containing the thermosetting resin, the film forming resin, the oligomer compound and the flux active compound. The adhesive film according to any one of (1) to (13), wherein / Wb) is 0.2 or more and 20 or less.
(15)
When the weight average molecular weight of the film forming resin is Na and the weight average molecular weight of the oligomer compound is Nb, and Na / Nb ≦ 1,000, the thermosetting resin, the film forming resin, the oligomer compound, and The adhesive film according to any one of (1) to (14), wherein the content Wb of the oligomer compound in the entire resin composition including the flux active compound is 1% by weight to 30% by weight.
(16)
The adhesive film according to any one of (1) to (15), wherein the flux active compound is phenolphthaline.
(17)
The adhesive film according to any one of (1) to (16), further comprising a filler.
(18)
The content of the filler is 0.1 wt% or more and 80 wt% or less of the entire resin composition including the thermosetting resin, the film-forming resin, the oligomer compound, the flux active compound, and the filler. The adhesive film according to (17), wherein
(19)
In the first semiconductor component provided with the solder layer on the surface and the second semiconductor component provided with the electrode having the metal layer on the main surface,
The adhesive film according to any one of (1) to (18), which is used for an adhesive layer that joins the surface of the first semiconductor component and the main surface of the second semiconductor component.
(20)
A multilayer circuit board in which the circuit board and the circuit board are bonded to each other with the cured product of the adhesive film according to any one of (1) to (19).
(21)
(1) The semiconductor component by which the semiconductor element and the semiconductor element are adhere | attached with the hardened | cured material of the adhesive film in any one of (19).
(22)
(1) The semiconductor component by which the semiconductor chip provided with the solder chip and the semiconductor wafer provided with the electrode which has a metal layer are adhere | attached with the hardened | cured material of the adhesive film in any one of (19).
(23)
A semiconductor component comprising a cured product of the adhesive film according to any one of (1) to (19), wherein a semiconductor wafer having a solder layer and a semiconductor wafer having an electrode having a metal layer are bonded.
(24)
(1) The semiconductor device with which the semiconductor element and the board | substrate were adhere | attached with the hardened | cured material of the adhesive film in any one of (19).

According to the present invention, it is possible to obtain an adhesive film, a multilayer circuit board, a semiconductor component, and a semiconductor device that are excellent in electrical connection reliability and ion migration resistance of the resin after sealing.

The above-described object and other objects, features, and advantages will be further clarified by a preferred embodiment described below and the following drawings attached thereto.

FIG. 1 is a cross-sectional view schematically showing an example of a method for manufacturing a semiconductor device.

Hereinafter, the adhesive film, multilayer circuit board, semiconductor component, and semiconductor device of the present invention will be described.
The adhesive film of the present invention comprises a thermosetting resin having a weight average molecular weight of less than 1000, a film forming resin, a weight average molecular weight smaller than that of the film forming resin, and a weight average larger than that of the thermosetting resin. It contains an oligomeric compound having a molecular weight and a flux active compound.

The multilayer circuit board of the present invention is a cured product of the adhesive film described above, and the circuit board and the circuit board are bonded to each other.
The semiconductor component of the present invention is a cured product of the adhesive film described above, wherein the semiconductor element and the semiconductor element are bonded.
A semiconductor device of the present invention is a cured product of the above-described adhesive film, in which a semiconductor element and a substrate are bonded.

(Adhesive film)
First, the adhesive film will be described in detail.
The adhesive film has a thermosetting resin having a weight average molecular weight of less than 1,000, a film forming resin, a weight average molecular weight smaller than that of the film forming resin, and a weight average larger than that of the thermosetting resin. It contains an oligomeric compound having a molecular weight and a flux active compound.
Thereby, the adhesive film which is excellent in the balance between the solder bondability and the film formability, in other words, the electrical connection reliability and the ion migration resistance of the resin after sealing is realized.

The adhesive film of the present invention includes a thermosetting resin having a weight average molecular weight of less than 1000, including an epoxy resin and a fail resin, a film-forming resin having a group that reacts with the epoxy resin or the fail resin, and the above An oligomer compound having a group that reacts with the epoxy resin or the fail resin, a weight average molecular weight smaller than that of the film-forming resin, and a weight average molecular weight larger than that of the thermosetting resin; and a flux active compound It is characterized by including these.
Such an adhesive film of the present invention is composed of a resin composition containing such a thermosetting resin, a film-forming resin, an oligomer compound, and a flux active compound. This resin composition may further contain a filler.

The resin composition includes a thermosetting resin. Thereby, the adhesive film after hardening is excellent in heat resistance.
The thermosetting resin according to the present invention includes at least an epoxy resin and a fail resin.
Examples of other thermosetting resins include oxetane resins, (meth) acrylate resins, unsaturated polyester resins, diallyl phthalate resins, maleimide resins, and the like. Epoxy resins are suitably used as thermosetting resins because they are excellent in curability and storage stability, heat resistance of cured products, moisture resistance, chemical resistance, and the like.

The weight average molecular weight of the thermosetting resin is not particularly limited, but is preferably less than 1,000, more preferably 100 to 900, still more preferably 150 to 800 (hereinafter, “to” is unless otherwise specified). Represents including upper and lower limits). When it is in the above range, high adhesiveness at the time of thermosetting of the adhesive film can be obtained and the melt viscosity of the adhesive film can be lowered, so that the solderability can be improved.

The content of the thermosetting resin is preferably 20 to 80% by weight, particularly preferably 30 to 70% by weight, based on the entire resin composition. When the content is within the above range, good curability can be obtained, and good melting behavior can be designed.

The resin composition contains a film-forming resin that improves the film-forming property of the film. Thereby, it becomes easy to make a film state, and the mechanical properties of the film are excellent.

The film-forming resin according to the present invention has a group that reacts with the epoxy resin or the fail resin in the thermosetting resin. Examples of the reactive group include a glycidyl ether group, a hydroxyl group, a carboxyl group, and an amino group. Thereby, the compatibility of the resin composition in an adhesive film improves.

Examples of the film-forming resin include (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, siloxane-modified polyimide resin, polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene- Butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer Examples include coalescence, polyvinyl acetate, and nylon. These may be used alone or in combination of two or more. Among these, at least one selected from the group consisting of (meth) acrylic resins, phenoxy resins, and polyimide resins is preferable.

The weight average molecular weight of the film-forming resin is not particularly limited, but is preferably 20,000 or more, more preferably 30,000 to 1,000,000, still more preferably 40,000 to 900,000. When the weight average molecular weight is in the above range, the film formability can be further improved.

The content of the film-forming resin is not particularly limited, but is preferably 5 to 50% by weight, more preferably 10 to 40% by weight, and particularly preferably 15 to 35% by weight of the entire resin composition. When the content is within the above range, the fluidity of the resin component before melting the adhesive film can be suppressed, and the handling of the adhesive film becomes easy.

The resin composition includes an oligomer compound. The oligomer compound has a weight average molecular weight lower than that of the film-forming resin and a weight average molecular weight higher than that of the thermosetting resin. By adding such an oligomer compound to the resin composition, the melt viscosity of the resin composition can be lowered and the compatibility of the resin composition can be improved. Therefore, the solder bondability of the adhesive film can be further improved.

Here, the technical significance (i) (ii) of the oligomer compound in the adhesive film of the present invention will be described in detail below.
When the adhesive film of the present invention contains the oligomer compound,
(I) Since the oligomer compound has a lower molecular weight than the film-forming resin, the weight average molecular weight of the entire resin composition in the adhesive film is lowered.
(Ii) An oligomer compound having a medium molecular weight, which is between the high molecular weight of the film-forming resin and the low molecular weight of the thermosetting resin, is introduced into the resin composition in the adhesive film.
Therefore, the melt viscosity of the resin composition can be reduced by the point (i). In addition, the compatibility of the resin composition can be improved by the point (ii). By such a decrease in the melt viscosity of the resin composition and an improvement in the compatibility of the resin composition, it is possible to improve the solder bondability (connection reliability of the semiconductor device) of the adhesive film.

Next, the technical significance of oligomeric compounds will be further explained based on the conventional technical level.

When the oligomer compound is not included, since the film-forming resin has a high molecular weight, the adhesive film has a high melt viscosity. For this reason, it is difficult to eliminate the resin in the adhesive film between the bonding bumps, which may cause a bonding failure.
On the other hand, in the present invention, an oligomer compound having a molecular weight lower than that of the film-forming resin is mixed. Thereby, it becomes possible to reduce the melt viscosity of the resin composition and improve the solderability of the adhesive film. Moreover, even if an oligomer compound is mixed, the film formability by the film-forming resin is not lowered.

In addition, for the purpose of decreasing the melt viscosity of the resin composition, even if the content of the low molecular weight thermosetting resin is increased and the melt viscosity of the resin composition can be decreased, the low molecular weight thermosetting is performed. It is presumed that the compatibility of the resin composition containing the functional resin and the high molecular weight film-forming resin remains low. For this reason, it is considered that the resin in the adhesive film between the bonding bumps is not easily removed, and a bonding failure occurs.
On the other hand, in the present invention, a medium molecular weight oligomer compound between a high molecular weight film-forming resin and a low molecular weight thermosetting resin is introduced into the resin composition in the adhesive film. . Thereby, the molecular weight distribution of the resin composition becomes more continuous, the compatibility of the resin composition can be improved, and the solderability of the adhesive film can be improved.

The weight average molecular weight of the oligomer compound is not particularly limited, but is preferably 1,000 to 15,000, particularly preferably 1,200 to 12,000. When the weight average molecular weight is less than the lower limit, the effect of improving the film forming ability may be reduced, and when the upper limit is exceeded, the effect of reducing the melt viscosity may be reduced.

Here, the weight average molecular weight can be measured using, for example, gel permeation chromatography (GPC).

Further, the oligomer compound according to the present invention has a group (functional group) that reacts with the epoxy resin or the fail resin in the thermosetting resin. Examples of the reactive group include a glycidyl ether group, a hydroxyl group, a carboxyl group, and an amino group. Thereby, the compatibility of the resin composition in an adhesive film improves.

The oligomer compound according to the present invention includes an acrylic resin, an epoxy resin, a phenol resin, and the like. The oligomer compound may contain one or more of these resins.

Examples of acrylic resins include acrylic acid esters such as acrylic acid, methacrylic acid, methyl acrylate and ethyl acrylate, methacrylic acid esters such as methyl methacrylate and ethyl methacrylate, polymer oligomers such as acrylonitrile and acrylamide, and others. And a copolymer oligomer with the above monomer.
Among acrylic resins (acrylic oligomers), an acrylic oligomer having a compound (copolymerization monomer component) having an epoxy group, a hydroxyl group, a carboxyl group, a nitrile group or the like is preferable, and particularly has at least one of a carboxyl group and a glycidyl group. Acrylic oligomers are preferred. Thereby, the adhesiveness to adherends, such as a semiconductor element, can be improved more.

In addition, the oligomer compound may be a compound having a functional group compatible with the thermosetting resin, a copolymer oligomer with another monomer, or the like.
Here, specific examples of the compound having a functional group include glycidyl methacrylate having a glycidyl ether group, hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, and acrylonitrile having a nitrile group.

The oligomer compound is not particularly limited, but is preferably compatible with the film forming resin. In particular, the oligomer compound preferably has a functional group compatible with the film-forming resin. Thereby, joining reliability can be improved more.

Examples of such compatible combinations include a combination of a film forming resin with an acrylic resin and an oligomer compound with an acrylic oligomer, a film forming resin with a phenoxy resin and an oligomer compound with an epoxy oligomer or a phenol oligomer, and the like. Is mentioned.

The content of the oligomer compound is not particularly limited, but is preferably 1 to 30% by weight, and particularly preferably 2 to 25% by weight of the entire resin composition. When the content is less than the lower limit, the melt viscosity may be increased, and when the content exceeds the upper limit, the film formability may be decreased.

The oligomeric compound is not particularly limited, but it is preferable to make the adhesive film have a melt viscosity at 150 ° C. of 10 to 1,000 Pa · s, particularly 20 to 900 Pa · s. When the melt viscosity of the adhesive film is within the above range, the solder bondability is particularly excellent.
The oligomer compound is not particularly limited, but preferably has a minimum melt viscosity of 0.1 to 10,000 Pa · s, particularly 0.5 to 5,000 Pa · s. It is preferable. When the minimum melt viscosity of the adhesive film is within the above range, the solder bondability is particularly excellent.
In addition, such an oligomer compound is appropriately selected depending on the type, blending, and the like of the thermosetting resin and the film-forming resin constituting the adhesive film.

The ratio (Wa / Wb) between the content Wa of the film-forming resin and the content Wb of the oligomer compound in the entire resin composition is not particularly limited, but is preferably 0.2 to 20. In particular, it is preferably 0.25 to 18. When the ratio is within the above range, the melt viscosity of the resin composition is particularly low, so that the adhesive film is easily removed from between the joining terminals, and the solderability (resin biting is reduced) is excellent.

Further, when the weight-average molecular weight of the film-forming resin is Na, the weight-average molecular weight of the oligomer compound is Nb, and when Na / Nb ≦ 1,000, the content Wb of the oligomer compound in the entire resin composition Is preferably 1 to 30% by weight, more preferably 2 to 25% by weight. Na / Nb is larger than 1, more preferably 5 or more. When the content is within the above range, the melt viscosity of the resin composition is particularly low, so that the adhesive film is easily removed from between the joining terminals, and the solder jointability (resin biting is reduced) is excellent.

The resin composition includes a flux active compound. Thereby, good solder joint can be performed. When the resin composition is melted, the flux active compound reduces the oxide film on the surface of the solder bump to improve the wettability of the solder component constituting the solder bump. For example, the internal electrode facing between the semiconductor element and the substrate The connection resistance value can be lowered.
Examples of the flux active compound include compounds containing a phenolic hydroxyl group and a carboxyl group.

Examples of the phenolic hydroxyl group-containing compound include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5 xylenol, and m-ethylphenol. 2,3-xylenol, meditol, 3,5-xylenol, p-tertiarybutylphenol, catechol, p-tertiaryamylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol A, bisphenol F, bisphenol AF, Monomers containing phenolic hydroxyl groups such as biphenol, diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resin, o-cresol novolac Resin, bisphenol F novolac resin, bisphenol A novolac resins.

In addition, examples of the carboxyl group-containing compound include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, aromatic carboxylic acids, and phenols.

Here, examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride and polysebacic acid anhydride.
Alicyclic acid anhydrides include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid anhydride Thing etc. are mentioned.
Examples of the aromatic acid anhydride include phthalic anhydride trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, ethylene glycol bistrimellitate, glycerol tris trimellitate and the like.

Aliphatic carboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, olein Examples include acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, and pimelic acid. Of these, aliphatic carboxylic acids represented by HOOC— (CH ₂ ) _n —COOH (n is an integer of 0 to 20) are preferred, and for example, adipic acid, sebacic acid, and dodecanedioic acid are preferred.

Aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platnic acid, pyromellitic acid, merit acid, triylic acid, xylyl acid, hemelitto Acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxy Benzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,5 Naphthoic acid derivatives such as -2-dihydroxy-2-naphthoic acid; phenolphthaline; diphenolic acid, etc. It is. When the flux active compound is phenol phthaline, the gel time of the adhesive film is increased, and a plurality of semiconductor components can be stacked and bonded together, resulting in excellent productivity.

Among these flux active compounds, compounds that can act as curing agents for the resin component of the thermosetting adhesive film (curing agents having flux activity) are preferred. In other words, the flux active compound has a function of reducing the oxide film on the surface of the solder bump to such an extent that it can be electrically bonded to the conductive member, and has a functional group that binds to the resin component (curing having flux activity). Agent). For example, when the resin component contains an epoxy resin, the curing agent having flux activity may have a carboxyl group and a group that reacts with the epoxy group (for example, a carboxyl group, a hydroxyl group, an amino group, etc.).

In this way, the curing agent having flux activity shows an action of reducing the oxide film on the surface of the solder bump to such an extent that it can be electrically bonded to the conductive member when soldering, and it is contained in the resin skeleton during the subsequent curing reaction. Will be captured. Therefore, the flux cleaning process can be omitted.

When the conventional flux active compound is simply used, when the flux cleaning is insufficient, the metal constituting the solder bump becomes a metal ion by the remaining flux active compound and may be eluted into the resin. The eluted metal ions in the resin may move between the electrodes and cause a short circuit between adjacent terminals when a voltage is applied (ion migration). On the other hand, when using the curing agent having the flux activity as described above, the flux active compound is taken into the resin skeleton, so that it does not easily remain as the flux active compound and generates the metal ions as described above. Can be reduced, and the occurrence of ion migration can be suppressed.

The content of the flux active compound is not particularly limited, but is preferably 1 to 20% by weight, particularly preferably 3 to 18% by weight, based on the entire resin composition. When the content is within the above range, the oxide film on the surface of the solder bump can be sufficiently reduced to such an extent that it can be electrically joined.

The flux active compound may be used singly or in combination of two or more, and the total content thereof is 1 to 20% by weight of the total resin composition, preferably 3 -18% by weight, more preferably 5-15% by weight. Within this range, the oxide film on the surface of the solder bumps can be sufficiently reduced to the extent that it can be electrically bonded, and when the resin component is cured, it can be efficiently added to the resin, and the elastic modulus of the resin or Tg can be increased. Moreover, generation | occurrence | production of the ion migration resulting from the hardening | curing agent which has unreacted flux activity can be suppressed.

In addition to the thermosetting resin, film-forming resin, oligomer compound, and flux active compound (curing agent having flux activity) described above, the resin composition includes a curing agent, a curing accelerator, a silane coupling agent, and a resin. Various additives may be added to improve various properties such as compatibility, stability, and workability.

For example, examples of the curing agent include phenols, amines, thiols and the like. These may be appropriately selected according to the type of the thermosetting resin used. For example, when an epoxy resin is used as the thermosetting resin, the curing agent includes good reactivity with the epoxy resin, low dimensional change upon curing, and appropriate physical properties after curing (for example, heat resistance, moisture resistance) Etc.), phenols are preferably used.

The phenols used in the present invention are not particularly limited, but are preferably bifunctional or higher because of excellent physical properties after curing of the adhesive tape. For example, bisphenol A, tetramethyl bisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolacs, cresol novolacs and the like can be mentioned. Of these, phenol novolacs and cresol novolacs are preferably used because of their good melt viscosity and reactivity with epoxy resins and excellent physical properties after curing.

The blending amount of the curing agent may be appropriately selected depending on the type of curable resin and curing agent to be used, or the type and amount of curing agent having flux activity. For example, when phenol novolacs are used as the curing agent, the blending amount is preferably 5% by weight or more, more preferably 10%, based on the whole resin composition, in terms of surely curing the curable resin. % By weight or more. If epoxy resin and unreacted phenol novolac remain, it becomes a factor of ion migration. Therefore, in order not to remain as a residue, it is preferably 30% by weight or less, more preferably 25% by weight or less.

You may prescribe | regulate the compounding quantity of a phenol novolak resin by the equivalent ratio with respect to an epoxy resin. For example, the equivalent ratio of phenol novolac resin to epoxy resin is 0.5 to 1.2, preferably 0.6 to 1.1, and more preferably 0.7 to 0.98. By setting the equivalent ratio of the phenol novolac resin to the epoxy resin to 0.5 or more, heat resistance and moisture resistance after curing can be ensured. On the other hand, by setting this equivalent ratio to 1.2 or less, the amount of the epoxy resin after curing and the unreacted residual phenol novolac resin can be reduced, and the ion migration resistance is improved.
These curing agents may be used alone or in combination of two or more.

The resin composition may further contain a curing accelerator. A hardening accelerator can be suitably selected according to the kind etc. of curable resin. As the curing accelerator, for example, an imidazole compound having a melting point of 150 ° C. or higher can be used. When the melting point of the curing accelerator used is 150 ° C. or more, before the curing of the adhesive film is completed, the solder components constituting the solder bumps can move to the internal electrode surface provided in the semiconductor element, The electrical connection between the internal electrodes can be improved. Examples of the imidazole compound having a melting point of 150 ° C. or higher include 2-phenylhydroxyimidazole and 2-phenyl-4-methylhydroxyimidazole.

The blending amount of the curing accelerator may be appropriately selected. For example, when an imidazole compound is used as the curing accelerator, it is preferably 0.005 to 10% by weight, more preferably, based on the entire resin composition. 0.01 to 5% by weight. By making the compounding quantity of an imidazole compound 0.005 weight% or more, the function as a hardening accelerator can be exhibited more effectively and the sclerosis | hardenability of an adhesive film can be improved. Moreover, by setting the blending amount of imidazole to 10% by weight or less, the melt viscosity of the resin at the melting temperature of the solder component constituting the solder bump does not become too high, and a good solder joint structure can be obtained. Moreover, the preservability of the adhesive film can be further improved.
These curing accelerators may be used alone or in combination of two or more.

The resin composition may further contain a silane coupling agent. By including a silane coupling agent, the adhesiveness of the adhesive film with respect to adherends, such as a semiconductor element and a board | substrate, can be improved. As the silane coupling agent, for example, an epoxy silane coupling agent, an aromatic-containing aminosilane coupling agent, or the like can be used. These may be used alone or in combination of two or more. The blending amount of the silane coupling agent may be appropriately selected, but is preferably 0.01 to 10% by weight, more preferably 0.05 to 5% by weight, based on the entire resin composition. More preferably, it is 0.1 to 2% by weight.

The resin composition may further include an inorganic filler. Thereby, the linear expansion coefficient of an adhesive film can be reduced, and reliability can be improved thereby.
Examples of the inorganic filler include silver, titanium oxide, silica, mica and the like. Among these, silica is preferable. Moreover, as a shape of a silica filler, although there exists crushing silica and spherical silica, spherical silica is preferable.

The average particle diameter of the inorganic filler is not particularly limited, but is preferably 0.01 μm or more and 20 μm or less, and particularly preferably 0.1 μm or more and 5 μm or less. By setting it as the said range, aggregation of a filler within an adhesive film can be suppressed and an external appearance can be improved.

The content of the inorganic filler is not particularly limited, but is preferably from 0.1 to 80% by weight, particularly preferably from 10 to 70% by weight, based on the entire resin composition. By setting the above range, the difference in linear expansion coefficient between the cured adhesive film and the adherend can be reduced, and the stress generated during thermal shock can be reduced. Furthermore, it can suppress reliably. Furthermore, since it can suppress that the elasticity modulus of the adhesive film after hardening becomes high too much, the reliability of a semiconductor device rises.

Next, the manufacturing method of the adhesive film of this invention is demonstrated.
Apply the varnish obtained by mixing the resin composition as described above in a solvent onto a base material that has been subjected to a release treatment such as a polyester sheet, and at a predetermined temperature, substantially free of solvent. The adhesive film can be obtained by drying the film.
The solvent used here is not particularly limited as long as it is inert to the components used, but ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, DAA (diacetone alcohol), etc. , Aromatic hydrocarbons such as benzene, xylene, toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol, n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, etc. Cellosolve, NMP (N-methyl-2-pyrrolidone), THF (tetrahydrofuran), DMF (dimethylformamide), DBE (dibasic acid ester), EEP (3-ethoxypropionic acid) Chill), DMC (dimethyl carbonate), etc. is preferably used. The amount of the solvent used is preferably in the range where the solid content of the components mixed in the solvent is 10 to 60% by weight.

The thickness of the obtained adhesive film is not particularly limited, but is preferably 1 to 300 μm, and particularly preferably 5 to 200 μm. When the thickness is within the above range, the resin component can be sufficiently filled in the gap between the joint portions, and the mechanical adhesive strength after curing of the resin component can be ensured.

The melt viscosity at 150 ° C. of the adhesive film is not particularly limited, but is preferably 10 to 1,000 Pa · s, and particularly preferably 20 to 800 Pa · s. When the melt viscosity is within the above range, the solderability is particularly excellent. This will be described more specifically. If it is below the upper limit of the melt viscosity at 150 ° C., in the process of joining the solder layer and the metal electrode, it becomes easy to remove the adhesive film from between the upper and lower joining terminals at the time of aligning them. Is excellent). Moreover, the protrusion of an adhesive film and generation | occurrence | production of a void can be reduced as it is more than the lower limit of 150 degreeC melt viscosity.

The minimum melt viscosity of the adhesive film is not particularly limited, but is preferably 0.1 to 10,000 Pa · s, particularly preferably 0.5 to 5,000 Pa · s. When the minimum melt viscosity is within the above range, the solderability is particularly excellent. This will be described more specifically. If it is below the upper limit of the minimum melt viscosity, during the soldering process between the solder layer and the metal electrode, the adhesive film is easily removed from between the upper and lower joining terminals during the soldering, and solderability (resin biting is reduced) ). Moreover, it can reduce that an adhesive film protrudes from a semiconductor component and a void generate | occur | produces that it is more than the lower limit of minimum melt viscosity.

The melt viscosity of the adhesive film was measured using a viscoelasticity measuring device ("RheoStress RS150" manufactured by HAAKE), parallel plate 20 mmφ, gap 0.05 mm, frequency 0.1 Hz, and heating rate at 10 ° C / min. The measured value was the melt viscosity at 150 ° C. and the value at which the melt viscosity was minimized.

The adhesive film thus obtained has a flux activity.
Therefore, the adhesive film of the present invention includes the first semiconductor component having a solder layer provided on the surface and the second semiconductor component having an electrode having a metal layer provided on the main surface, and the surface of the first semiconductor component. Used for an adhesive layer that joins the main surface of the second semiconductor component. The first semiconductor component and the second semiconductor component are respectively a semiconductor element and a substrate, a circuit board and a circuit board, a semiconductor element and a semiconductor element, a semiconductor wafer including a solder layer and a semiconductor wafer including an electrode having a metal layer, solder A semiconductor wafer having a layer, a semiconductor wafer having an electrode having a metal layer, and the like can be used. The adhesive film of the present invention can be suitably used in a connection portion of a member that requires solder connection between such a solder layer and a metal electrode.

Next, a multilayer circuit board, a semiconductor component, and a semiconductor device using the above-described adhesive film will be described.
FIG. 1 is a cross-sectional view showing an example of a method for manufacturing a semiconductor device.
As shown in FIG. 1, a semiconductor element 1 having a solder bump 11 (solder layer) on its surface is prepared (FIG. 1 (a)). The adhesive film 2 having the above-described flux function is laminated so as to cover the solder bumps 11 of the semiconductor element 1 (FIG. 1B).

Examples of a method for laminating the adhesive film 2 having the flux function on the semiconductor element 1 include a roll laminator, a flat plate press, a wafer laminator, and the like. Among these, a method of laminating under vacuum (vacuum laminator) is preferable in order to prevent air from being involved during lamination.

The conditions for laminating are not particularly limited as long as they can be laminated without voids. Specifically, 60 to 150 ° C. × 1 second to 120 seconds are preferable, and 80 to 120 ° C. × 5 to 60 seconds are particularly preferable. When the laminating conditions are within the above range, the balance between the sticking property, the effect of suppressing the protrusion of the resin, and the degree of curing of the resin is excellent.
The pressurizing condition is not particularly limited, but is preferably 0.2 to 2.0 MPa, particularly preferably 0.5 to 1.5 MPa.

Next, a substrate 3 (circuit board) having a pad portion (an electrode having a metal layer) (not shown) on the main surface is prepared at a position corresponding to the solder bump 11 of the semiconductor element 1 described above. 3 is positioned and temporarily bonded via the adhesive film 2 having a flux function (FIG. 1C). The conditions for temporary pressure bonding are not particularly limited, but are preferably 60 to 150 ° C. × 1 second to 120 seconds, and more preferably 80 to 120 ° C. × 5 to 60 seconds. The pressurizing condition is not particularly limited, but is preferably 0.2 to 2.0 MPa, particularly preferably 0.5 to 1.5 MPa.

Next, the solder bumps 11 are melted to form solder connection portions 111 that are soldered to the pads (FIG. 1D).
The solder connection conditions depend on the type of solder used. For example, in the case of Sn-Ag, the solder connection is preferably performed by heating at 220 to 260 ° C. for 5 to 500 seconds, particularly 230 to 240 ° C. for 10 to 10 ° C. It is preferable to heat for 100 seconds.
This solder bonding is preferably performed under conditions such that the adhesive film 2 is cured after the solder bumps 11 are melted. That is, the solder bonding is preferably performed under the condition that the solder bump 11 is melted but the curing reaction of the adhesive film 2 does not proceed so much. Thereby, the shape of the solder connection part at the time of soldering can be made into the stable shape which is excellent in connection reliability.

Next, the adhesive film 2 is heated and cured. The conditions for curing are not particularly limited, but are preferably 130 to 220 ° C. × 30 to 500 minutes, and particularly preferably 150 to 200 ° C. × 60 to 180 minutes.

Thus, the semiconductor device 10 in which the semiconductor element 1 and the substrate 3 are bonded with the cured product of the adhesive film 2 can be obtained. Since the semiconductor device 10 is bonded with the cured product of the adhesive film 2 as described above, the electrical connection reliability is excellent.
Moreover, a circuit board and a circuit board can be joined with the hardened | cured material of an adhesive film by the same method, and a multilayer circuit board can be obtained.
Moreover, the semiconductor component which adhere | attached the semiconductor element and the semiconductor element with the hardened | cured material of the adhesive film by the same method can be obtained.

Further, by a similar method, a semiconductor component in which a semiconductor chip having a solder layer and a semiconductor wafer having an electrode having a metal layer are bonded with a cured product of an adhesive film can be obtained. A semiconductor component in which a semiconductor wafer including an electrode having a metal layer is bonded with a cured product of an adhesive film can be obtained.
Subsequently, using a dicing blade, the semiconductor components are cut between each other, and the components are separated to obtain a semiconductor device. In the present embodiment, a plurality of semiconductor components are stacked together, but the present invention is not limited to this, and other components may be mounted after the main semiconductor components are stacked together.

Hereinafter, other embodiments according to the present invention will be described.
(1) Consists of a resin composition comprising a thermosetting resin, a film forming resin that improves the film formability of the film, an oligomer compound having a lower molecular weight than the film forming resin, and a flux active compound. An adhesive film characterized by being made.
(2) The adhesive film as described in (1) above, wherein the oligomer compound has a weight average molecular weight of 1,000 to 15,000.
(3) The adhesive film as described in (1) or (2) above, wherein the content of the oligomer compound is 1 to 30% by weight of the whole resin composition.
(4) The adhesive film according to any one of (1) to (3), wherein the oligomer compound is compatible with the film-forming resin.
(5) The adhesive film according to any one of the above (1) to (4), wherein the oligomer compound is used to adjust the melt viscosity at 150 ° C. of the adhesive film to 10 to 1,000 Pa · s.
(6) The above (1) to (5), wherein the ratio (Wa / Wb) between the content Wa of the film-forming resin and the content Wb of the oligomer compound in the entire resin composition is 0.2 to 20. The adhesive film according to any one of the above.
(7) When the weight average molecular weight of the film-forming resin is Na, the weight average molecular weight of the oligomer compound is Nb, and when Na / Nb ≦ 1,000, the content of the oligomer compound in the entire resin composition The adhesive film according to any one of (1) to (6), wherein Wb is 1 to 30% by weight.
(8) The adhesive film according to any one of (1) to (7), wherein the film-forming resin includes an acrylic resin.
(9) The adhesive film according to any one of (1) to (8), wherein the oligomer compound includes an acrylic oligomer.
(10) A multilayer circuit board comprising a cured product of the adhesive film according to any one of (1) to (9), wherein the circuit board and the circuit board are bonded.
(11) A semiconductor component, wherein the semiconductor element and the semiconductor element are bonded to each other with a cured product of the adhesive film according to any one of (1) to (9).
(12) A semiconductor device, wherein the semiconductor element and the substrate are bonded to each other by a cured product of the adhesive film according to any one of (1) to (9).

Hereinafter, the present invention will be described in detail based on examples and comparative examples, but the present invention is not limited thereto.

Example 1
<Preparation of adhesive film>
As thermosetting resin, epoxy resin (Nippon Kayaku Co., Ltd., NC6000, weight average molecular weight: 600) 44.5 parts by weight and phenol resin (Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) 10 parts by weight (Meth) acrylic resin (acrylic ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer) as a film-forming resin, manufactured by Nagase ChemteX Corporation, SG-708-6 , Tg: 6 ° C., weight average molecular weight: 800,000) and 20 parts by weight of a styrene acrylic copolymer having a carboxyl group as an oligomer compound (oligomer 1, manufactured by Toagosei Co., Ltd., UC-3900, weight average molecular weight: 4 , 600) 10 parts by weight and a flux active compound (fura 15 parts by weight of phenolphthalin (manufactured by Tokyo Kasei Kogyo Co., Ltd.) as a curing agent), 0.1 part by weight of an imidazole compound (manufactured by Shikoku Kasei Co., Ltd., 2P4MZ) as a curing accelerator, and as a silane coupling agent 0.4 parts by weight of 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (epoxysilane, Shin-Etsu Chemical Co., Ltd., KBM-303) was dissolved in methyl ethyl ketone (MEK) to obtain a resin varnish.
The obtained resin varnish is applied to a base polyester film (manufactured by Toray Industries Inc., Lumirror) so as to have a thickness of 50 μm, dried at 100 ° C. for 5 minutes, and an adhesive film having a flux activity of 25 μm in thickness. Got.

<Manufacture of semiconductor devices>
The obtained adhesive film was laminated to a semiconductor element having a solder bump (size 10 mm × 10 mm, thickness 0.3 mm) at 100 ° C. with a vacuum roll laminator to obtain a semiconductor element with an adhesive film.
Next, the semiconductor element was temporarily pressure-bonded to the circuit board at 100 ° C. for 30 seconds while being aligned so that the pads of the circuit board having the pads and the solder bumps were in contact with each other.
Next, the solder bumps were melted by heating at 235 ° C. for 30 seconds to perform solder connection.
And it heated at 180 degreeC for 60 minute (s), the adhesive film was hardened, and the semiconductor device with which the semiconductor element and the circuit board were adhere | attached with the hardened | cured material of the adhesive film was obtained.

(Example 2)
In the preparation of the resin varnish, the following compounds were used as oligomer compounds, and the same amounts as in Example 1 were used except that the blending amounts were as follows.
As thermosetting resin, epoxy resin (Nippon Kayaku Co., Ltd., NC6000, weight average molecular weight: 600) 44.5 parts by weight and phenol resin (Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) 10 parts by weight (Meth) acrylic resin (acrylic ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer) as a film-forming resin, manufactured by Nagase ChemteX Corporation, SG-708- 6, Tg: 6 ° C., weight average molecular weight: 800,000) 25 parts by weight and a styrene acrylic copolymer having a glycidyl group as an oligomer compound (oligomer 2, manufactured by Toagosei Co., Ltd., UG-4040, weight average molecular weight: 11,000) 5 parts by weight and a flux active compound (fura 15 parts by weight of phenolphthalin (manufactured by Tokyo Kasei Kogyo Co., Ltd.) as a curing agent), 0.1 part by weight of an imidazole compound (manufactured by Shikoku Kasei Co., Ltd., 2P4MZ) as a curing accelerator, and as a silane coupling agent 0.4 parts by weight of 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (epoxysilane, Shin-Etsu Chemical Co., Ltd., KBM-303) was used.

(Example 3)
In the adjustment of the resin varnish, the same procedure as in Example 1 was carried out except that the blending amounts were as follows.
As thermosetting resin, epoxy resin (Nippon Kayaku Co., Ltd., NC6000, weight average molecular weight: 600) 44.5 parts by weight and phenol resin (Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) 10 parts by weight (Meth) acrylic resin (acrylic ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer) as a film-forming resin, manufactured by Nagase ChemteX Corporation, SG-708-6 , Tg: 6 ° C., weight average molecular weight: 800,000) and 6 parts by weight of a styrene acrylic copolymer having a carboxyl group as an oligomer compound (oligomer 1, manufactured by Toagosei Co., Ltd., UC-3900, weight average molecular weight: 4 , 600) 24 parts by weight and a flux active compound (flat 15 parts by weight of phenolphthalin (manufactured by Tokyo Chemical Industry Co., Ltd.) as a curing agent having a high activity, 0.1 parts by weight of an imidazole compound (manufactured by Shikoku Kasei Co., Ltd., 2P4MZ) as a curing accelerator, and as a silane coupling agent 0.4 parts by weight of 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (epoxysilane, Shin-Etsu Chemical Co., Ltd., KBM-303) was used.

Example 4
In the adjustment of the resin varnish, the same procedure as in Example 1 was carried out except that the blending amounts were as follows.
As thermosetting resin, epoxy resin (Nippon Kayaku Co., Ltd., NC6000, weight average molecular weight: 600) 44.5 parts by weight and phenol resin (Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) 10 parts by weight (Meth) acrylic resin (acrylic ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer) as a film-forming resin, manufactured by Nagase ChemteX Corporation, SG-708-6 , Tg: 6 ° C., weight average molecular weight: 800,000) 28 parts by weight and a styrene acrylic copolymer having a carboxyl group as an oligomer compound (Oligomer 1, manufactured by Toagosei Co., Ltd., UC-3900, weight average molecular weight: 4 , 600) 2 parts by weight and a flux active compound (flat 15 parts by weight of phenolphthalin (manufactured by Tokyo Chemical Industry Co., Ltd.) as a curing agent having a high activity, 0.1 parts by weight of an imidazole compound (manufactured by Shikoku Kasei Co., Ltd., 2P4MZ) as a curing accelerator, and as a silane coupling agent 0.4 parts by weight of 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (epoxysilane, Shin-Etsu Chemical Co., Ltd., KBM-303) was used.

(Example 5)
In the adjustment of the resin varnish, the same procedure as in Example 1 was carried out except that the blending amounts were as follows.
44.5 parts by weight of epoxy resin (Dainippon Ink Chemical Co., Ltd., EPICLON-850, weight average molecular weight: 380) and a phenol resin (manufactured by Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) as thermosetting resin 10 parts by weight, 15 parts by weight of a phenoxy resin (manufactured by Tohto Kasei Co., Ltd., FX-293, weight average molecular weight: 45,000) as a film forming resin, and an epoxy resin (oligomer 3, JER Corporation, Ep -1002, 15 parts by weight of a weight average molecular weight: 1,200, 15 parts by weight of phenolphthaline (manufactured by Tokyo Chemical Industry Co., Ltd.) as a flux active compound (curing agent having flux activity), and an imidazole compound (as a curing accelerator) Shikoku Kasei Co., Ltd. 2P4MZ) 0.1 parts by weight and silane coupling agent To give 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and (epoxysilane, manufactured by Shin-Etsu Chemical Co., KBM-303) 0.4 parts by weight, was used.

(Example 6)
In the adjustment of the resin varnish, the same procedure as in Example 1 was carried out except that the blending amounts were as follows.
44.5 parts by weight of epoxy resin (Dainippon Ink Chemical Co., Ltd., EPICLON-850, weight average molecular weight: 380) and a phenol resin (manufactured by Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) as thermosetting resin 10 parts by weight, 15 parts by weight of phenoxy resin (manufactured by Tohto Kasei Co., Ltd., FX-293, weight average molecular weight: 45,000) as a film-forming resin, and epoxy resin (oligomer 4, JER Corporation, Ep -1010, 15 parts by weight of a weight average molecular weight: 5,500), 15 parts by weight of phenolphthalin (manufactured by Tokyo Chemical Industry Co., Ltd.) as a flux active compound (curing agent having flux activity), and an imidazole compound (as a curing accelerator) Shikoku Kasei Co., Ltd. 2P4MZ) 0.1 parts by weight and silane coupling agent To give 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and (epoxysilane, manufactured by Shin-Etsu Chemical Co., KBM-303) 0.4 parts by weight, was used.

(Example 7)
In the adjustment of the resin varnish, the same procedure as in Example 1 was carried out except that the blending amounts were as follows.
44.5 parts by weight of epoxy resin (Dainippon Ink Chemical Co., Ltd., EPICLON-850, weight average molecular weight: 380) and a phenol resin (manufactured by Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) as thermosetting resin 10 parts by weight, 15 parts by weight of a phenoxy resin (manufactured by Tohto Kasei Co., Ltd., FX-293, weight average molecular weight: 45,000) as a film-forming resin, and a phenol resin (oligomer 5, manufactured by Sumitomo Bakelite Co., Ltd.) PR-51470, 15 parts by weight of a weight average molecular weight: 2,200, 15 parts by weight of phenolphthaline (manufactured by Tokyo Chemical Industry Co., Ltd.) as a flux active compound (curing agent having flux activity), and an imidazole compound as a curing accelerator (Shikoku Kasei Co., Ltd., 2P4MZ) 0.1 parts by weight and silane As coupling agent 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and (epoxysilane, manufactured by Shin-Etsu Chemical Co., KBM-303) 0.4 parts by weight, was used.

(Example 8)
In the adjustment of the resin varnish, the same procedure as in Example 1 was carried out except that the blending amounts were as follows.
As thermosetting resin, epoxy resin (Dainippon Ink Chemical Co., Ltd., EPICLON-850, weight average molecular weight: 380) 40 parts by weight and phenol resin (Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) 9 weights 13.5 parts by weight of a phenoxy resin (manufactured by Toto Kasei Co., Ltd., weight average molecular weight: 45,000) and an epoxy resin (oligomer 4, JER Corporation, Ep-1010, weight) as an oligomer compound 13.5 parts by weight of an average molecular weight: 5,500), 13.5 parts by weight of phenolphthaline (manufactured by Tokyo Chemical Industry Co., Ltd.) as a flux active compound (curing agent having flux activity), and an imidazole compound as a hardening accelerator ( Shikoku Kasei Co., Ltd. 2P4MZ) 0.1 parts by weight and 2 as silane coupling agent 0.4 part by weight of (3,4-epoxycyclohexyl) ethyltrimethoxysilane (epoxysilane, Shin-Etsu Chemical Co., Ltd., KBM-303) and silica filler as a filler (SE-1050-LC, manufactured by Admatechs Co., Ltd.) ) 10 parts by weight were used.

Example 9
In the adjustment of the resin varnish, the same procedure as in Example 1 was carried out except that the blending amounts were as follows.
26.7 parts by weight of epoxy resin (Dainippon Ink Chemical Co., Ltd., EPICLON-850, weight average molecular weight: 380) as a thermosetting resin and phenol resin (manufactured by Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) 6 parts by weight, 9 parts by weight of phenoxy resin (manufactured by Tohto Kasei Co., Ltd., FX-293, weight average molecular weight: 45,000) as a film-forming resin, and epoxy resin (oligomer 4, JER Corporation, Ep -1010, 9 parts by weight of a weight average molecular weight: 5,500), 9 parts by weight of phenolphthalin (manufactured by Tokyo Chemical Industry Co., Ltd.) as a flux active compound (curing agent having flux activity), and an imidazole compound (as a curing accelerator) Shikoku Kasei Co., Ltd. 2P4MZ) 0.1 parts by weight and 2 as silane coupling agent 0.2 parts by weight of (3,4-epoxycyclohexyl) ethyltrimethoxysilane (epoxysilane, Shin-Etsu Chemical Co., Ltd., KBM-303) and silica filler (SE-1050-LC, manufactured by Admatechs Co., Ltd.) as a filler ) 40 parts by weight were used.

(Comparative Example 1)
In the preparation of the resin varnish, the same procedure as in Example 1 was conducted except that the oligomer compound was not used and the formulation was as follows.
As thermosetting resin, epoxy resin (Nippon Kayaku Co., Ltd., NC6000, weight average molecular weight: 600) 44.5 parts by weight and phenol resin (Sumitomo Bakelite, PR-53647, weight average molecular weight: 570) 10 parts by weight (Meth) acrylic resin (acrylic ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer) as a film-forming resin, manufactured by Nagase ChemteX Corporation, SG-708- 6, Tg: 6 ° C., 30 parts by weight of weight average molecular weight: 800,000), 15 parts by weight of phenolphthalin (manufactured by Tokyo Chemical Industry Co., Ltd.) as a flux active compound (curing agent having flux activity), and a curing accelerator As an imidazole compound (manufactured by Shikoku Kasei Co., Ltd., 2P4MZ) 0.1 layer Parts and, as a silane coupling agent 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and (epoxysilane, manufactured by Shin-Etsu Chemical Co., KBM-303) 0.4 parts by weight, was used.

The following evaluations were performed on the semiconductor devices obtained in the examples and comparative examples. The evaluation items are shown together with the contents. The obtained results are shown in Table 1.

1. Ion migration properties For the semiconductor devices obtained in each of the examples and comparative examples, the insulation resistance value between adjacent bumps was continuously measured while applying a voltage of 5 V in an environment of 130 ° C. and 85% RH. evaluated. Each code is as follows.
A: The insulation resistance value after 500 hours was 1.0E + 06 or more.
○: The insulation resistance value decreased to 1.0E + 06 or less in 100 to 250 hours.
Δ: The insulation resistance value decreased to 1.0E + 06 or less in 24 hours to less than 100 hours.
X: The insulation resistance value decreased to 1.0E + 06 or less in 0 to less than 24 hours.

2. Electrical connection reliability 20 cycles of each of the semiconductor devices obtained in each of the examples and comparative examples were alternately exposed to a cycle of -55 ° C for 30 minutes and 125 ° C for 30 minutes. The temperature cycle test was performed 100 cycles, and the connection resistance value of the semiconductor element and the circuit board was measured with a digital multimeter for the semiconductor device after the test to evaluate the electrical connection reliability. Each code is as follows.
A: The connection resistance values of all 20 semiconductor devices were 10Ω or less.
X: The connection resistance value of one or more semiconductor devices was 10Ω or more.

3. Melt viscosity measurement method The melt viscosity of the adhesive film was measured using a viscoelasticity measuring device ("RheoStress RS150" manufactured by HAAKE), a parallel plate of 20 mmφ, a gap of 0.05 mm, a frequency of 0.1 Hz, and a heating rate of 10 ° C / Measured under the conditions of minutes, the melt viscosity at 150 ° C. and the value at which the melt viscosity is minimized were taken as the measured values.

As is clear from Table 1, Examples 1 to 9 were excellent in ion migration property and electrical reliability. On the other hand, in the comparative example 1 which does not use an oligomer compound, it was inferior to electrical reliability.
This application claims priority based on Japanese Patent Application No. 2008-326771 filed on Dec. 24, 2008, the entire disclosure of which is incorporated herein.

Claims (24)

A thermosetting resin having a weight average molecular weight of less than 1,000;
A film-forming resin;
An oligomer compound having a weight average molecular weight smaller than that of the film-forming resin and having a weight average molecular weight larger than that of the thermosetting resin;
A flux active compound;
Including an adhesive film. The adhesive film according to claim 1, wherein the oligomer compound has a weight average molecular weight of 1,000 or more and 15,000 or less. The adhesive film according to claim 1 or 2, wherein the oligomer compound contains at least one selected from the group consisting of an acrylic resin, an epoxy resin, and a phenol resin. The adhesive film according to any one of claims 1 to 3, wherein the film-forming resin contains an acrylic resin or a phenoxy resin. The adhesive film according to any one of claims 1 to 4, wherein the film-forming resin has a weight average molecular weight of 20,000 or more. The adhesive film according to any one of claims 1 to 5, wherein the thermosetting resin contains an epoxy resin and a phenol resin. The adhesive film according to claim 6, wherein the oligomer compound has a group that reacts with the epoxy resin or the fail resin. The adhesive film according to claim 6 or 7, wherein the film-forming resin has a group that reacts with the epoxy resin or the fail resin. The content of the oligomer compound is 1% by weight or more and 30% by weight or less of the entire resin composition including the thermosetting resin, the film-forming resin, the oligomer compound, and the flux active compound. The adhesive film according to any one of 8. The content of the film-forming resin is 10% by weight or more and 50% by weight or less based on the entire resin composition including the thermosetting resin, the film-forming resin, the oligomer compound, and the flux active compound. The adhesive film according to any one of 1 to 9. The adhesive film according to claim 1, wherein the oligomer compound is compatible with the film-forming resin. The adhesive film according to any one of claims 1 to 11, wherein the melt viscosity at 150 ° C is from 10 Pa · s to 1,000 Pa · s. The adhesive film according to any one of claims 1 to 12, wherein a minimum melt viscosity is 0.1 Pa · s or more and 10,000 Pa · s or less. The ratio (Wa) of the content Wa of the film forming resin and the content Wb of the oligomer compound of the entire resin composition containing the thermosetting resin, the film forming resin, the oligomer compound and the flux active compound. The adhesive film according to claim 1, wherein / Wb) is 0.2 or more and 20 or less. When the weight average molecular weight of the film forming resin is Na and the weight average molecular weight of the oligomer compound is Nb, and Na / Nb ≦ 1,000, the thermosetting resin, the film forming resin, the oligomer compound, and The adhesive film according to claim 1, wherein the content Wb of the oligomer compound in the entire resin composition including the flux active compound is 1% by weight or more and 30% by weight or less. The adhesive film according to claim 1, wherein the flux active compound is phenol phthaline. The adhesive film according to any one of claims 1 to 16, further comprising a filler. The content of the filler is 0.1 wt% or more and 80 wt% or less of the entire resin composition including the thermosetting resin, the film-forming resin, the oligomer compound, the flux active compound, and the filler. The adhesive film according to claim 17. In the first semiconductor component provided with the solder layer on the surface and the second semiconductor component provided with the electrode having the metal layer on the main surface,
The adhesive film according to claim 1, wherein the adhesive film is used for an adhesive layer that joins the surface of the first semiconductor component and the main surface of the second semiconductor component. A multilayer circuit board, wherein the circuit board and the circuit board are bonded with the cured product of the adhesive film according to any one of claims 1 to 19. A semiconductor component in which the semiconductor element and the semiconductor element are bonded to each other by the cured product of the adhesive film according to any one of claims 1 to 19. 20. A semiconductor component comprising a cured product of the adhesive film according to claim 1, wherein a semiconductor chip having a solder layer and a semiconductor wafer having an electrode having a metal layer are bonded to each other. A semiconductor component comprising a cured product of the adhesive film according to any one of claims 1 to 19, wherein a semiconductor wafer having a solder layer and a semiconductor wafer having an electrode having a metal layer are bonded to each other. A semiconductor device in which the semiconductor element and the substrate are bonded with the cured product of the adhesive film according to claim 1.

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