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TW201031730A - Adhesive film, multi-layer circuit board, semiconductor component and semiconductor device - Google Patents

Adhesive film, multi-layer circuit board, semiconductor component and semiconductor device Download PDF

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Publication number
TW201031730A
TW201031730A TW098144704A TW98144704A TW201031730A TW 201031730 A TW201031730 A TW 201031730A TW 098144704 A TW098144704 A TW 098144704A TW 98144704 A TW98144704 A TW 98144704A TW 201031730 A TW201031730 A TW 201031730A
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Taiwan
Prior art keywords
resin
adhesive film
weight
compound
film
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TW098144704A
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Chinese (zh)
Inventor
Tomoe Fujii
Kenzou Maejima
Satoru Katsurayama
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Sumitomo Bakelite Co
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Publication of TW201031730A publication Critical patent/TW201031730A/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09J161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • H05K3/305—Affixing by adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
    • H10W74/012—
    • H10W74/15—
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C08L2666/14—Macromolecular compounds according to C08L59/00 - C08L87/00; Derivatives thereof
    • C08L2666/22—Macromolecular compounds not provided for in C08L2666/16 - C08L2666/20
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H10W72/00—
    • H10W72/016—
    • H10W72/07232—
    • H10W72/07236—
    • H10W72/07251—
    • H10W72/073—
    • H10W72/07331—
    • H10W72/20—
    • H10W72/856—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)

Abstract

The present invention relates to an adhesive film comprising: a thermosetting resin having a weight average molecular weight of less than 1, 000; a film forming resin; an oligomer compound having a weight average molecular weight smaller than that of the film forming resin and larger than that of the thermosetting resin; and a flux active compound.

Description

201031730 六、發明說明： 【發明賴之技術領域】 半導體用零件及半 本發明係Μ於轉膜、多層電路基板、 導體裝置。 【先前技術】 〇 隨近年電子機盗的高機能化及輕薄短小化 體封裝等電切件的高密度雜化、高密度絲切 =等電子零件的小型化、多針腳化進展。為能獲得 錢趣接，錢用料接合。料_合係^ 如·+導體元件間的導通接合部、如利用覆晶所搭載封 =的半導體元件㈣路基板間之導通接合部、魏基板間的 導通接合部等。轉錫接合部為能確保電氣式雛強度鱼機 械式麵接強度’―般係注人通稱「填底膠」的 底膠密封）。 m ❹“由該焊錫接合部所產生的空隙（_)利用液狀密封 樹脂(填底膠材)進行㈣時’便切錫接合後再供應液狀密 封樹脂（填底膠材），藉由將其硬化以補強焊錫接合部。然 而，隨電子零件的薄型化、小型化，因為焊錫接合部會呈現 窄間距化/窄_化’因而即便切難合後供應液狀密封 樹脂(填底膠材）’於間隙間仍不會遍佈液狀密封樹脂(填底膠 材），會發生較難完全填充的問題。 針對此種問題’已知有赫異向導電薄膜，統括地施行端 098144704 3 201031730 子間之電氣式_與密封的方法。例如有記韻含有焊錫粒 子的黏著膜介設於構件間，再藉由熱壓接，使二構件的電氣 耗接部时存料粒？，再將其他部分填Μ細旨成分的方 法(例如參照專利文獻1。 但疋’此方法較難確保電氣式耦接可靠度與密封後的樹脂 耐離子遷移性。 [先行技術文獻] [專利文獻] 專利文獻1 .曰本專利特開昭61_276873號公報 【發明内容】 (發明所欲解決之問題） 本發明目的在於提供：電氣式耦接可靠度及密封後的樹脂 耐離子遷移性均優異之黏著膜、多層電路基板、半導體用零 件及半導體裝置。 (解決問題之手段） 此種目的係利用下述(1)〜(24)所記載的本發明而達成。 (1)一種黏著膜，係含有： 重量平均分子量未滿1，〇〇〇的熱硬化性樹脂； 成膜性樹脂； 具有重量平均分子量較小於上述成膜性樹脂，且具有重量 平均分子量較大於上述熱硬化性樹脂的募聚物化合物；以及 助焊劑活性化合物。 098144704 4 201031730 ⑺如⑴所記載之黏著膜，其中，上述寡聚物化合物的重 量平均分子量係1,000以上、15,〇〇〇以下。 (3) 如（1)或(2)所記載之黏著膜，其中，上述寡聚物化合物 係含有從丙烯酸樹脂、環氧樹脂、酚樹脂所構成群組中選擇 至少1種以上。 (4) 如（1)至(3)中任一項所記載之黏著膜，其中，上述成膜 性樹脂係含有丙烯酸系樹脂或苯氧樹脂。 ❿ （5)如（1)至(4)中任一項所記载之黏著膜，其中，上述成骐 性樹脂的重量平均分子量係達2萬以上。 ⑹如（1)至(5)中任一項所記載之黏著膜，其中，上述熱硬 化性樹脂係含有環氧樹脂及酚樹脂。 ⑺如⑹所6載之黏著膜，其巾，上述寡聚物化合物係具 有與上述環氧樹脂或上述酚樹脂產生反應的基。 ⑻如⑹或⑺所記載之黏著膜，其中，上述成膜性樹脂係 ©具有與上述環氧樹脂或上料樹脂產生反應的基。 (9)如(1)至(8)中任-項所記裁之黏著膜，其中，上述寡聚 物化合物的含有量係佔含有上述熱硬化性_、上述成膜性 _旨、上縣聚物化合物赴細_雜化合物的樹脂組 成物整體之1重量％以上、3〇重量％以下。 ⑽如⑴至(9)中任-項所記載之黏著膜，其中，上述成 膜性樹脂的含有量係佔含有上述熱硬化性樹脂、上述成膜性 樹月曰上述养聚物化合物及上述助焊劑活性化合物的樹脂組 098144704 5 201031730 成物整體之10重量％以上、5〇重量％以下。 (11) 如⑴至（10)中任-項所記載之黏著膜，其中，上述寡 聚物化合物係具有與上述成膜性樹脂的相溶性。 (12) 如⑴至（11)中任-項所記載之黏著膜其中，15叱 的熔融黏度係10Pa · s以上、l，〇〇〇Pa · s以下。 〇3)如⑴至（12)中任-項所記載之黏著膜，其中，最低熔 融黏度係O.lPa · s以上、10，_Pa · s以下。 (14) 如（1)至（13)中任一項所記載之黏著膜，其中，含有上❹ 述熱硬化性樹脂、上述成膜性樹脂、上述寡聚物化合物及上 述助知劑活性化合物的樹脂組成物整體中，上述成膜性樹脂 含有量Wa、與上述寡聚物化合物含有量Wb的比(Wa/Wb)， 係0.2以上、20以下。 (15) 如（1)至（14)中任一項所記載之黏著膜，其中，將上述 成膜性樹脂的重量平均分子量設為Na、將上述募聚物化合 物的重量平均分子量設為Nb，且Na/NbS 1，000時，含有上 © 述熱硬化性樹脂、上述成膜性樹脂、上述寡聚物化合物及上 述助焊劑活性化合物的樹脂組成物整體中，上述募聚物化合 物的上述含有量Wb係1重量％以上、30重量％以下。 (16) 如（1)至（15)中任一項所記載之黏著膜，其中，上述助 焊劑活性化合物係還原驗醜(phen〇iphthalin)。 (17) 如（1)至（16)中任一項所記載之黏著膜’其中，更進一 步含有填充材。 098144704 6 201031730 (18) 如（17)所記載之黏著膜，其中，上述填充材含有量係 佔含有上述熱硬化性樹脂、上述成膜性樹脂、上述寡聚物化 合物、上述助焊劑活性化合物及上述填充材的樹脂組成物整 體中之0.1重量％以上、80重量％以下。 (19) 如（1)至（18)中任一項所記載之黏著膜，其中，表面設 有焊錫層的第1半導體零件、及主面設有具金屬層之電極的 第2半導體零件， ❹上述第1半導體零件的上述表面、與上述第2半導體零件 的上述主面，係使用黏著層進行接合。 (20)-種多層電路基板，係利用⑴至（19)中任—項所記載 之黏著膜的硬化物，將電路基板與電路基 ⑼-種半導體用零件，綱⑴至(19)^_= 所記載 之黏者膜的硬化物，將半導體元件與半導體元件施行黏著。 〇 (22)-種半導_零件’係顧⑴至（19)中任—項所記載 之黏著膜的硬化物’將财闕層的半導體晶片、* 金屬層之電極的半導體晶圓施行黏著。 〃 ⑼-種半導體轉件’係⑴物)中任—項所記載 之黏著膜的硬化物，將設有焊錫層的半 a®« 守體晶圓、鱼設有具 金屬層之電極的半導體晶圓施行黏著。 " (24)種半導體震置，係利用（1)至（1 動英胺k 任一項所記載之 (發明效果） 黏著膜的硬化物，將半導體元件與基板施行黏著 098144704 201031730 根據本發明’可獲得電氣式耗接可靠度及密封後的樹脂耐 離子遷移性均優異之黏著膜、多層電路基板、半導體用零件 及半導體裝置。 上述目的、其他目的、特徵及優點，藉由所述較佳實施形 態、及其所附示的以下圖式，便可更進一步清楚明瞭。 【實施方式】 以下’針對本發明的黏著膜、多層電路基板、半導體用零 件及半導體裝置進行說明。 本發明的黏著膜其特徵在於含有：重量平均分子量未滿 1000的熱硬化性樹脂、成膜性樹脂、具有重量平均分子量 較小於成膜性樹脂且具有重量平均分子量較大於熱硬化性 樹脂的寡聚物化合物、以及助烊劑活性化合物。 再者’本發明的多層電路基板其特徵在於：利用上述所記 載黏著膜的硬化物，將電路基板與電路基板施行黏著。 再者’本發明的半導體用零件其特徵在於：利用上述所記 載黏著膜的硬化物，將半導體元件與半導體元件施行黏著。 再者，本發明的半導體裝置其特徵在於：利用上述所記載 黏著膜的硬化物，將半導航件與基板施行黏著。 (黏著膜） 首先，針對黏著膜進行詳細說明。 上述黏著膜其特徵在於含有··重量平均分子量未滿 的熱硬化性樹脂、賴性獅、具有重量平均分子量較小於 098144704 201031730 j膜/•生树^且具有重1平均分子量較大於熱硬化性樹腊的 寡聚物化合物、以及助焊劑活性化合物。 藉此’便實現焊錫接合性與薄膜形成性間之均衡優異，換 .言之，電氣聽接可靠度及密封後的樹脂_子遷移性均優 異之黏著膜。 再者，本發明的黏著膜其特徵在於含有：熱硬化性樹脂、 成膜性樹脂、絲物化合物、以及助焊鮮性化合物。該熱 〇硬化性樹脂係含有環氧樹脂與轉脂，且重量平均分子量^ 滿麵。該成膜性樹脂係具有能與上述環氧樹脂或上述紛 樹脂產生反應的基，寡聚物化合物係具有能與上述環氧樹 脂或上述_脂產生反應，並具有重量平均分子量較小 於上述成膜性樹脂且具有重量平均分子量較大於上述 化性樹脂。 … 此種本發明的黏著膜係由含有此種熱硬化性樹脂、成膜性 ©樹脂、寡聚物化合物及助焊劑活性化合物的樹脂組成物構 成。該樹脂組成物亦可更進一步含有填充材。 上述樹脂組錢係含有熱硬錄樹脂。藉此硬化後的點著 膜便呈優異耐熱性。 本發明的熱硬化性樹脂係至少含有環⑽脂與紛樹脂。 其他的熱硬化性樹脂係可舉例如：氧雜環丁燒樹脂 (:xetaneresin)、（甲基）丙婦酸醋樹脂、不飽和聚醋樹脂^ 苯二曱酸二稀丙醋樹脂、順丁歸二醯亞胺樹脂等。環氧樹脂 098144704 201031730 係就從硬化性、保存性、以及硬化物的耐熱性、耐濕性、耐 藥性等均優異的觀點，因而頗適用為熱硬化性樹脂。 熱硬化性樹脂的重量平均分子量並無特別的限定，較佳係 未滿1,000、更佳100〜900、特佳150〜80〇(以下「〜」在無特 別聲明的前提下，係指包括上限值與下限值）。若在上述範 圍内，便可獲得黏著膜熱硬化時的高反應性，且可降低黏著 膜的熔融黏度，因而可提升焊錫接合性。 上述熱硬化性樹脂的含有量較佳係佔上述樹脂組成物整 體的20〜80重量％、更佳30〜70重量％。若含有量在上述範 圍内，便可獲得良好硬化性，且可進行良好的㈣行為設計。 上述樹脂組成物係含有提升薄膜成膜性的成膜性樹脂。藉 此’便使形成薄膜狀態趨於容易，且薄膜的機械特性優異。 μ本發明的成驗樹脂係具有能與上述熱硬化性樹脂中的 環氧樹脂絲樹難纽應的基。該產纽觸基係有如： 環氧㈣基、錄、縣、胺基等。藉此，將提升黏著膜中 的樹脂組成物相溶性。 士上述成膜性翻係可舉例如：（曱細烯酸_脂、苯氧 樹脂、聚賴脂、聚胺甲酸_脂、輯亞胺樹脂、石夕氧燒 改質聚醯亞胺樹脂、聚丁二烯、聚丙烯、苯乙烯_丁二烯-笨 m乙稀_丁烯·苯乙烯共聚物、聚醇縮搭樹 聚乙烯丁縣仏、聚乙埽醇縮㈣丨脂、丁基橡膠、氣丁 -稀橡膠、《胺樹月旨、㈣腈_ 丁二烯共聚物、丙婦猜-丁 098144704 201031730 一烯-丙烯酸共聚物、丙烯腈_ 丁二 r 尸雜站 本乙烯共聚物、聚醋酸 乙烯s曰、尼龍專。該等係可使用 楂亦可併用2種以上。 /、，較佳為從(甲基)丙烯酸系樹脂、 樹脂所構成群組中選擇至少！種。 夂聚醯亞胺 上述成雌樹脂㈣量平均分子量並無__定，較佳 萬以上、更佳3萬〜_萬、特佳4萬〜90萬。若重量平均 分子量在上述範_，便可更佳提升成膜性。 Ο ❹ 上述成難_的含有量並無_的限定，錄係佔上述 樹脂組成物整體的5〜5〇重量％、更佳1〇〜4〇重量％、特佳 15〜35重量％。若含有量在上述範圍内，便可抑制黏著膜溶 融前的樹脂成分流動性，並可使轉膜的處置趨於容易。 上述樹脂城物係含有寡聚物化合物。縣㈣化合物係 具有較小於上述成雜_的重量平均分子量，且具有較大 於上述熱硬化性樹脂的重量平均分子量。藉由將此種寡聚物 化合物添加⑽餘祕t，便可降㈣驗成物的溶融黏 度，且可提升樹脂組成物的相溶性。所以，可更加提升黏著 膜的焊錫接合性。 此處，針對本發明黏著膜的寡聚物化合物之技術性意義 ⑴、（ii)，進行以下詳述。 本發明的黏著膜係藉由含有上述寡聚物化合物， ⑴因為寡聚物化合物具有較低於成膜性樹脂的分子量，因 此會降低黏著膜中的樹脂組成物整體重量平均分子量； 098144704 11 201031730 (ϋ)對黏著膜中的樹脂組成物’導入具有在成膜性樹脂高 分子量、與熱硬化性樹脂低分子量之間.，屬於中程度分子: 的寡聚物化合物。 所以’利用⑴便可降低樹脂組成物的熔融黏度。且，藉由 (ii)便可提升樹脂組成物的相溶性。藉由降低此種樹脂纟且成 物的溶融黏度、與提升樹脂組成物的相溶性，便可提升黏著 膜的焊錫接合性(半導體裝置之搞接可靠度）。 其次，凌越習知技術水準，針對寡聚物化合物的技術性意❹ 義進行說明。 當未含有寡聚物化合物的情況’因為上述成膜性樹脂係屬 於高分子量，因此黏著膜會成為高熔融黏度。因而，接合凸 塊間的黏著膜中之樹脂較不易排除，會有發生接合不良的情 沉。 相對於此，本發明中，混合入較上述成膜性樹脂更低分子 量的募聚物化合物。藉此便可降低上述樹脂組成物的熔融黏❹ 度，俾可提升黏著膜的焊錫接合性。且，即便混合入寡聚物 化合物’仍不致使由上述成膜性樹脂所產生的薄膜形成性降 低。 再者’在降低樹脂組成物之熔融黏度目的下，即使增加低 分子量熱硬化性樹脂含有量，便可降低樹脂組成物的熔融黏 · 度’但推測含有低分子量熱硬化性樹脂與高分子量成膜性樹 月曰的樹脂組成物之相溶性仍保持較低狀態。因而，接合凸塊 098144704 12 201031730 間的黏著膜中之樹脂較不易排除，判斷會發生接合不良情 形。 相對於此’本發明中，對黏著膜中的樹脂組成物，導入在 尚分子量成膜性樹脂與低分子量熱硬化性樹脂之間，屬於中 程度分子量的募聚物化合物。藉此，樹脂組成物的分子量分 佈將變為更連續，能提升樹脂組成物的相溶性，俾可提升黏 著膜的焊錫接合性。 ❹ 上述寡聚物化合物的重量平均分子量並無特別的限定，較 佳1，000〜15,00〇、更佳1，200〜12,000。若重量平均分子量未 滿上述下限值，則會有提升薄膜形成能力的效果降低之情 況，反之，若超過上述上限值，則會有降低熔融黏度的效果 降低之情況。 此處’重量平均分子量係例如可使用凝膠滲透色層分析儀 (GPC)施行測定。 G 再者，本發明的寡聚物化合物係具有能與上述熱硬化性樹 月曰中的環氧樹脂或酚樹脂產生反應之基（官能基）。該產生反 應的基係有如：環氧丙醚基、羥基、羧基、胺基等。藉此， 將提升黏著膜中的樹脂組成物相溶性。 本發明的寡聚物化合物係含有：丙烯酸樹脂、環氧樹脂、 酚樹脂等。寡聚物化合物亦可含有該等樹脂丨種以上。曰 再者，丙烯酸樹脂係可舉例如：丙烯酸、甲基丙烯酸、 烯酸甲酯、丙烯酸乙醋等丙烯酸酯；曱基丙烯酸甲酽丙 曰甲基 098144704 13 201031730 丙烯酸乙醋等甲基丙烯酸酯，·丙烯腈、丙烯醯胺等聚合體寡 聚物、以及與其單體的共聚物寡聚物等。 再者，丙稀酸樹脂（丙烯酸系寡聚物）甲，較佳係所含化人 物（共聚合單體成分)屬於具有諸如環氧基、經基、幾基、^ 基等的丙烯酸系寡聚物、更佳係具有羧基或環氧丙基中至少 其中一者的丙烯酸系养聚物。藉此，可更加提升對諸如半導 體元件等被黏物的密接性。 再者，寡聚物化合物亦可為具有與熱魏性伽呈相溶性 官能基的化合物、以及與其他單體的共聚物寡聚物等。 此處，具有官能基的化合物，具體係可舉例如：具環氧丙 醚基的甲基丙烯酸環氧丙s旨、具·的經基甲基丙稀酸醋、 具羧基的羧基丙烯酸酯、具腈基的丙烯腈等。 此外，上述寡聚物化合物並無特別的限定，較佳係與成膜 性樹脂間具相溶性。特佳的寡聚物化合物係具有與成膜性樹 脂間呈相溶性的官能基。藉此，可更加提升接合可靠度。 此種具有相溶性的組合係可舉例如：成膜性樹脂為丙婦酸 系=脂與募聚物化合物為丙稀酸寡聚物的組合、成膜性樹脂 為苯氧樹脂與募聚物化合物為環氧寡聚物或紛寡聚物的组 合等。 ， 上述寡聚物化合物的含有量並無特別的限定較佳佔上述 繼旨組成物整體的i，重量％、更佳2〜25重量％。若含有 量未滿上述下限值’則會有溶融黏度變高的情形，反之，若 098144704 201031730 超過上述上限值，則會有薄膜形成性降低的情形。 •^述寡聚物化合物並無㈣的限定，較佳制黏著膜的 15〇°C熔融黏度設為10〜Looopa.s者、更佳設為2〇〜9〇〇pa· s者。藉由將黏著膜的溶融黏度設為上述範圍内，特別係焊 錫接合性將優異。 上述寡聚物化合物並無制的限定，較佳係將黏著膜的最低 熔融黏度設為0.1〜l〇,〇〇〇pa.s者、更佳設為〇 5〜5 〇〇〇pa.s者。 ❹藉由將黏著膜的最低熔融減設為上述範_，特別係焊錫 接合性將優異。 另外’此種募聚物化合物係依照構成黏著膜的熱硬化性樹 脂、成膜性樹脂的種類、配方等因素再適當選擇。 上述樹脂組成物整體中的上述成膜性樹脂含有量Wa、與 上述募聚物化合物含有量Wb的比(Wa/Wb)，並無特別的限 定，較佳為0.2〜20、更佳為0.25〜18。若將比值設在上述範 G圍内，因為特別係上述樹脂組成物的熔融黏度會變低，因此 從接合端子間的黏著膜排除將趨於容易，焊錫接合性(減少 樹脂咬合)優異。 再者，將上述成膜性樹脂的重量平均分子量設為Na、將 上述寡聚物化合物的重量平均分子量設為灿，且 Na/Nb$l，〇〇〇時’上述樹脂組成物整體中的上述寡聚物化 合物之上述含有量Wb，較佳係1〜30重量％、更佳2〜25重 量％。且，Na/Nb大於1、更佳達5以上。若含有量在上述 098144704 15 201031730 範圍内，因為特別係上述樹脂組成物的熔融黏度會變低，因 此從接合端子間的黏著膜排除將趨於容易，焊錫接合性（減 少樹脂咬合)優異。 上述樹脂組成物係含有助焊劑活性化合物。藉此，可施行 良好的焊錫接合。助焊劑活性化合物係當上述樹脂組成物進 行熔融時，便將焊錫凸塊表面的氧化膜還原，提高構成焊錫 凸塊的焊錫成分濕潤性，例如可降低在半導體元件與基板間 呈相對向的内部電極耦接電阻值。 上述助焊劑活性化合物係可舉例如：酚性羥基、含羧基的 化合物等。 酚、耶T酚、2,6_ 上述含有酚性羥基的化合物係可舉例如： ~ 二甲紛、對甲紛、間甲盼、鄰乙聽、2m 2,5"；二 甲酚、間乙基酚、2,3-二f酚、菜酚(mesit〇i)、3,5二甲酚、 對第三丁絲、鄰苯二盼、對第三戊絲、間苯二紛、對辛 ^等^本基齡、雙紛A、雙盼F、雙紛AF、雙盼、二婦 單^類.sT二埽丙基雙紛A、參盼、肆料切性經基的 ^祕樹脂、鄰甲盼_祕樹脂、雙盼F 雙酚A酚醛樹脂等。 啊月日 合物係可舉例如：脂肪族酸酐、 脂肪族羧酸、芳香族羧酸、酚類 再者，上述含有羧基的化 脂環式酸if、料族酸軒、 等。 此處 脂肪族酸酐係可舉例如 098144704 :琥珀酸酐、聚己二酸酐、 201031730 聚壬二酸酐、聚癸二酸酐等。 脂環式酸酐係可舉例如：曱基四氫酞酸酐、甲基六氫酞酸 酐、曱基腐植酸酐、六氫酞酸酐、四氫酞酸酐、三烷基四氫 敝酸酐、甲基環己烯二叛酸酐等。 芳香族酸酐係可舉例如：酞酸酐、偏苯三酸酐、均苯四甲 酸酐、二苯基酮四羧酸酐、乙二醇雙偏苯三酸酯、丙三醇三 偏苯三酸酯等。 0 脂肪族羧酸係可舉例如：蟻酸、醋酸、丙酸、丁酸、戊酸、 三甲基乙酸、己酸、辛酸、月桂酸、肉豆蔻酸、棕櫚酸、硬 脂酸、丙烯酸、甲基丙烯酸、巴豆酸、油酸、反丁烯二酸、 順丁烯二酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、癸 二酸、十二烧二酮酸、庚二酸等。其中，較佳係依 HOOC-(CH2)n-COOH(n係0〜20的整數)所示月旨肪族羧酸、更 佳例如己二酸、癸二酸、十二炫二酮酸。 ❹ 芳香族羧酸係可舉例如：苯曱酸、酞酸、間苯二曱酸、對 苯二曱酸、1，2,3·•苯三曱酸、偏苯三酸、均苯三甲酸、偏苯 四曱酸、1,2,3,4-苯四曱酸、均苯四曱酸、苯六甲酸、三苯 曱酸、二笨甲酸、2,3-苯三曱酸、3,5-二甲苯甲酸、2,3,4-三 ' 曱苯曱酸、甲苯酸、肉桂酸、水楊酸、2,3-二羥基苯曱酸、 • 2,4-二羥基苯曱酸、龍膽酸(2,5-二羥基笨曱酸）、2,6-二羥基 苯曱酸、3,5-二羥基苯曱酸、沒食子酸(3,4,5-三羥基苯曱 酸）、4-二羥基-2-萘曱酸、3,5-二羥基-2-萘曱酸、3,5-2-二羥 098144704 17 201031730 基-2-萘甲酸等萘甲酸衍生物. ，還原紛醜，二_酸 焊劑活性化合物係還祕 羊田助 長，可將膜的凝膠時間變 長 +導體零件積層並統括地施行接合，因此生產 性優異。 口此玍度 該等助㈣丨科化合物0，錄雜發揮熱硬化性黏著 膜的樹脂成分硬化劑作用之化合物(具助焊劑活性的硬化 劑）。即，上相焊劑活性化合物較佳係呈現可將焊锡凸塊 表面的氧倾還原至能與導電構件進行魏式接合程度的 作用，且具有能與樹脂成分相鍵結之官能基的化合物（具助 焊劑活性的硬化劑）。例如當樹脂成分係含有環氧樹脂的情 況’具有助焊難性的硬化财可具有絲、以及能與環氧 基產生反應的基(例如敌基、經基、胺基等）。 依此具有助焊劑活性的硬化劑，係施行焊錫耦接之際，呈 現將焊錫凸塊表面的氧化膜還原至能與導電構件進行電氣 式接合程度的作用，並在後續硬化反應中能被取入於樹脂骨 架中。所以’助焊劑洗淨的步驟可省略。 若單純使用習知助焊劑活性化合物，當助焊劑洗淨不足的 情況，會因殘存的助焊劑活性化合物導致構成焊錫凸塊的金 屬變成金屬離子’並溶出於樹脂中。該溶出於樹脂中的金屬 離子，係若施加電壓’便在電極間移動，會有導致相鄰接端 子間呈短路肇因的情況(離子遷移）。相對於此，當使用具有 如上述助焊劑活性的硬化劑時，因為助焊劑活性化合物將被 098144704 18 201031730 取入於樹脂骨架中，因而_依助焊劑活性化合物形式殘 存’可減4如上述金屬離子的發生，俾可抑制離子遷移的發 生 上述助焊劑活性化合物的含有量並無特別的限定，較佳係 佔上述樹脂組成物整體中的卜肋重量％、更佳3〜Μ重量 %。若含有量在上述範_，便可充分將焊錫凸塊表面的氧 化膜還原至旎進行電氣式接合的程度。 6 ❿ 上述助焊劑活性化合物係可使用1種、亦可併用2種以 上且3有量口 δ十值係佔上述樹脂組成物整體中的1〜重 量％、較佳3〜18重量％、更佳5〜15重量％。若在此範圍内， 便可充分將焊錫凸塊表面的氧化膜還原至能進行電氣式接 合的程度，域脂成分進行硬化時，可效率佳地附加於樹脂 中，並可提高樹脂的彈性模數或Tg。此外，可抑制因具有 未反應助烊劑活性的硬化劑所引起離子遷移情況的發生。 上述樹月曰組成物中，除上述熱硬化性樹脂、成膜性樹脂、 寡聚物化合物、助焊劑活性化合物(具有助焊劑活性的硬化 劑)之外，尚可添加硬化劑、硬化促進劑、石夕烧偶合劑、以 及為提升樹m目雜、蚊性、作等各㈣㈣的各種 添加齊丨等。 例如硬化劑係可舉例如：齡類、胺類、硫醇類等。該等係 ’、要配。所使用熱硬化性樹月旨的種類等因素再適當選擇便 可。例如當熱硬化性樹㈣使用環氧樹脂的情況，硬化劍係 098144704 201031730 就從能獲得與環氧樹脂間呈良好反應性、硬化時的尺寸變化 較4、及更化後的適當物性(例如财熱性、耐濕性等)觀 點’最好使用紛類。 本發明所使用的_並無特別的蚊，就從黏貼膠帶經硬 化後的物性優異觀點’最好屬於雙官能基以上。例如··雙紛 A、四曱基雙紛A、-、協;^ 一烯两基雙酚A、雙酚、雙酚F、二烯 丙基雙盼F、參紛、肆盼、齡-盼酸類、甲盼着搭類等。其 中’就從熔融減、及與環氧樹脂間的反應性良好，且經硬 化後的物性優異觀點，最好使用紛_祕類及甲紛__類。 上述硬H的調配里係只要依照所使用硬化性樹脂或硬 化劑的種類、或具有助烊劑活性的硬化劑種類與使用量等因 素再適#騎便可。例如當硬化㈣使騎·祕類的情 況’其調配量係就從使硬化性樹脂確實硬化的觀點，相對於 上述樹脂組成物整體，較佳達5重量 篁/〇以上、更佳達1 〇重 量。/。以上。若有殘留未與環氧樹脂產生反應的齡__類， 會變成為離子遷移的要因。所以，炎 馬了不會依殘渣形式殘 留，較佳在30重量％以下、更佳25重量。/❶以下。 飞夕龙 酚-酚醛樹脂的調配量係可依相對於 氧樹脂的當量比谁 行規定。例如相對於環氧樹脂的樹脂 0.5〜1.2、較佳0.6〜1.1、更佳〇.7〜〇98。 置比係 樹脂的酚-酚醛樹脂當量比設為〇.5 胃由將相對於環氧 上’便可破保硬化後 的耐熱性、耐濕性。另一方面，藉由 將該當量比設為1.2以 098144704 20 201031730 下便可減；經硬化後未與環氧樹脂產生反應的殘留酚_酚 搭樹脂量’俾使耐離子遷移性呈良好。 δ亥等硬化劑係可使用1種、亦可併用2種以上。 再者，上述樹脂組成物亦可更進一步含有硬化促進劑。硬 化促進冑j係可配合硬化性樹脂的種類等因素再適當選擇。硬 化促進劑係可使用例如溶點達15〇<t以上的味唾化合物。若 所使用硬化促_的熔輯15m，财黏著膜的硬化 ❹完成之前’構成焊錫凸塊的焊錫成分將可在半導體元件上所 «χ置内邛電極表面進行移動，俾可使内部電極間的電氣式耦 接良好溶點達150 C以上的味嗤化合物係有如：2_苯基 羥基咪唑、2_笨基_4_曱基羥基咪唑等。 土 硬化促進劑的調配量係只要適當選擇便可，例如當硬化促 進齊1係使用米。坐化合物的情泥，相對於上述樹脂組成物整 體，較佳〇.005〜10重量％、更佳0.01〜5重量％。藉由將咪 ❹唆化合物的調配量設為達0施重量％以上，便可更有效地 發揮硬化促進義機能，俾可提升黏著賴硬化性。且，藉 由^米唾的調配量設為1G重量％以下，則在構成焊錫凸塊 的焊錫成分之熔融溫度下，樹脂的熔融黏度不會變為過高， 俾可獲件良好的焊錫接合構造。且’可更加提升黏著膜的保 ' 存性。 °亥等硬化促進劑係可使用1種、亦可併用2種以上。 再者，上述樹脂組成物亦可更進一步含有矽烷偶合劑。藉 098144704 21 201031730 由含有梦㈣合劑，便可提高㈣膜對半導體元件、基板等 被黏物的密娜。石夕炫偶合劑係可使用例如··環氧石夕二偶合 劑、含芳香族之胺基矽烷偶合劑等。該等係可使用丨二、: 可併用2種以上。石夕烧偶合劑的調配量係只要適當選擇便 可，對於上述樹脂組成物整體，較佳〇 〇1〜1〇重量I、'更佳 0.05〜5重量％、特佳〇.1〜2重量％。 上述樹脂組成物亦可更進—步含有無機填充材。藉此，可 降低黏著膜的線膨脹係數，藉而可提升可靠度。9 上述無機填充材係可舉例如：銀、氧化鈦、二氧切、雲€ 母等，該等之中較佳為二氧切。此外，二氧切填充劑: 形狀係有破碎二氧切與球狀二氧切，較佳為球狀二氧化 石夕。 無機填充材的平均粒徑並無特別的限定，較佳為〇〇ι牌 以上、卿喊下、更佳Μ-以上、5帅以下。藉由設 為上述範圍内，便可抑制黏著膜内的填充劑凝聚，俾可提升❹ 無機填充_含有量並無制的限定，㈣於上述樹脂組 成物整體，較佳為G.1〜80重量％、更佳10〜70重量％。藉由 因為經硬化後的黏著膜與被議間之線 ::數差會變小，可減輕熱衝擊時所發生的應力，因而可 膜彈物剝離。且，因為可抑制經硬化後的黏著 績變為過高情形，因而铸體裝置的可靠度將提 098144704 22 201031730 升。 其次，針對本發明黏著膜的製作方法進行說明。 將如上述的樹脂組成物混合於溶劑中而獲得的清漆，塗佈 於經施行聚酯片等剝離處理過的基材上，再依既定溫度施行 乾燥直到實質未含溶劑的程度為止，藉此便可獲得黏著膜。 此處所使用的溶劑，在對所使用成分係屬於非活性之前提 下’其餘並無特別的限定’可適當使用例如：丙酮、甲乙酿j、 ❹曱基異丁酮、DIBK(二異丁酮）、環己酿J、DAA(二丙酮醇) 等酮類；苯、二曱笨、曱笨等芳香族烴類；甲醇、乙醇、異 丙醇、正丁醇等醇類；甲基赛珞蘇、乙基赛珞蘇、丁基赛珞 蘇、甲基賽路蘇醋酸酯、乙基赛珞蘇醋酸酯等赛珞蘇系； ]SiMP(N-曱基-2-吡咯啶酮）、THF(四氫呋喃）、DMF(二甲基甲 醯胺）、DBE(二元酸酯）、EEP(3-乙氧基丙酸乙酯）、DMC(碳 酸二曱酯）等。溶劑的使用量較佳設為混合入溶劑中的成分 ❹ 固形份為10〜60重量％範圍内。 所獲得黏著膜的厚度並無特別的限定，較佳為l〜3〇〇^m、 更佳5〜2〇〇μιη。若厚度在上述範圍内，便可在接合部的間 隙中充分地填充樹脂成分’俾可確保樹脂成分經硬化後的機 械式黏著強度。 黏著膜的150 C熔融黏度並無特別的限定，較佳 ’OOOPa s、更佳20〜800Pa · s。若熔融黏度在上述範圍 内，特別係焊錫接合性優異。更具體的說明。若在15〇。匸熔 098144704 23 201031730 融黏度的上限值以下，則在焊錫層與金屬電極的接合過程 中，進行該等的對位時，從上下接合端子間的黏著膜排除變 為容易，焊錫接合性（減少樹脂咬合)優異。且，若在150°C 熔融黏度的下限值以上，則可減輕黏著膜的滲出、孔洞發生 情形。 再者，黏著膜的最低熔融黏度並無特別的限定，較佳 0.1〜10,000Pa · s、更佳0.5〜5,000Pa · s。若最低熔融黏度在 上述範圍内，特別係焊錫接合性優異。更具體的說明。若在 最低熔融黏度的上限值以下，則在焊錫層與金屬電極的接合 過程中，進行該等的焊錫接合時，從上下接合端子間的黏著 膜排除變為容易，焊錫接合性(減少樹脂咬合)優異。且，若 在最低熔融黏度的下限值以上，則可減輕黏著膜的滲出、孔 洞發生情形。 黏著膜的熔融黏度係使用黏彈性測定裝置（HAAKE公司 製「Rheo Stress RS150」），依照平行板2Omm0、間隙 0.05mm、頻率0.1Hz、升溫速度10°C/分的條件施行測定， 將150°C下的熔融黏度與熔融黏度成為最小的值設為測定 值。 依此所獲得的黏著膜係具有助焊劑活性。 所以，本發明的黏著膜係在表面設有焊錫層的第1半導體 零件、及主面設有具金屬層之電極的第2半導體零件，使用 為將第1半導體零件表面與第2半導體零件主面進行接合用 098144704 24 201031730 的黏著層。第i半導體零件與第2半導體零件分別可設為例 如：半導體元件與基板；電路基板與電路基板；半導體元件 與半導體元件；具有焊錫層的半導體晶片、與設有具金屬層 之電極的半導體晶圓；設有悍錫層的半導體晶圓、與設有具 金屬層之電極的半導體晶圓等。本發明的黏著膜係頗適用於 將此種焊錫層與金屬電極間之焊錫耦接設為必要之構件的 耦接部。 ❹ 其次，針對使用上述黏著臈的多層電路基板、半導體用零 件及半導體裝置進行說明。 圖1所示係+導體裝置之製造方法一例剖視圖。 如圖1所示，#備表面具有焊錫凸塊11(焊錫層）的半導體 兀件1(圖1(a))。依覆蓋該半導體元件丨的焊踢凸塊U之方 式’積層著上述具有助谭劑機能的黏著膜2(圖购）。 將該具有助烊劑機能的黏著膜2積層於半導體元件i上的 ❺方法’可舉例如：輥貼面層壓、平板壓合、晶圓層壓等。該 等之中，為能在日林會捲人空氣，最好採取在真空下^ 行積層的方法（真空層壓）。 行積層的條件並無制的限定，只要能在無出 孔洞情況下進行籍恳偭了 珥 積層便可，具體較佳係6〇〜15〇«>Cxl秒〜I 秒鐘、更佳8〇〜^ < ‘ L ^ 5〜60秒鐘。若積層條件在上述範 内，黏貼性、桔“ t、、&山4 曰/多出的抑制效果、以及樹脂硬化度間之 衡優異。 ^ 098144704 25 201031730 再者’加壓條件亦無特別的限定，較佳為〇 2〜2.〇MPa、 更佳 0.5〜1.5MPa。 接著’準備在對應上述半導體元件1的焊錫凸塊U位置 處，於主面設有未圖示焊墊部（具金屬層之電極）的基板3(電 路基板），一邊進行半導體元件1與基板3的對位，一邊經 由具有助焊劑機能的黏著膜2施行暫時壓接（圖i(c))。施行 暫時壓接的條件並無特別的限定，較佳6〇〜15〇。〇 χ1秒〜12〇 秒鐘、更佳80〜120。〇5〜60秒鐘。且，加壓條件亦無特別 的限定，較佳0.2〜2.0MPa、更佳〇.5〜i.5MPa。 接著，將焊錫凸塊11熔融，而形成與焊墊進行焊錫接合 的焊錫耦接部111(圖1(d))。 施行焊錫耦接的條件雖亦是依照所使用焊錫種類而有所 差異’例如Sn-Ag的情況’較佳係施行220〜260。〇5〜500 秒鐘加熱而進行焊錫耦接、更佳係施行230〜24(TCxl〇〜1〇〇 秒鐘加熱。 该焊錫接合較佳係在將焊錫凸塊u融解後，再依黏著膜201031730 VI. Description of the Invention: [Technical Field of Invention] Semiconductor parts and half The present invention relates to a transfer film, a multilayer circuit substrate, and a conductor device. [Prior Art] 随 High-density hybridization and high-density wire-cutting of electric cutting parts such as high-end electronic pirates and high-density wire-cutting in recent years, such as miniaturization and multi-pinning of electronic parts. In order to get money, the money is joined by materials. The material is a conduction junction between the conductor elements, such as a semiconductor element mounted on the flip chip, a conduction junction between the substrate, a conduction junction between the substrate, and the like. The tin-bonding joint is a primer seal that can ensure the electrical strength of the electric-type strength of the fish. m ❹ "When the void (_) generated by the solder joint portion is made of a liquid sealing resin (filled with a primer) (4), the liquid sealing resin (filled with a primer) is supplied after the tin-bonding is performed. It is hardened to reinforce the solder joint. However, with the thinning and miniaturization of the electronic parts, the solder joints are narrow-pitched/narrowed, so that the liquid sealing resin is supplied even after the hard-to-close Material) 'The liquid sealing resin (filled with the bottom material) will not be distributed between the gaps, and the problem of difficulty in complete filling will occur. For this kind of problem, it is known that the opposite-direction conductive film is uniformly applied to the end 098144704. 201031730 Electric type _ and sealing method. For example, there is an adhesive film containing solder particles interposed between the members, and then the thermoelectric connection is used to store the particles in the electrical parts of the two members. The method of filling the other parts into the components (for example, refer to Patent Document 1. However, this method is difficult to ensure the electrical coupling reliability and the ion mobility resistance of the resin after sealing. [Prior Art Document] [Patent Literature] Patent Document 1. 曰本SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) An object of the present invention is to provide an adhesive film and a multilayer circuit board which are excellent in electrical coupling reliability and resin ion migration resistance after sealing. A semiconductor component and a semiconductor device. (Means for Solving the Problem) The object is achieved by the present invention described in the following (1) to (24). (1) An adhesive film comprising: a weight average molecular weight of less than a thermosetting resin of ruthenium; a film-forming resin; a polymerizable compound having a weight average molecular weight smaller than the above-mentioned film-forming resin and having a weight average molecular weight larger than the above-mentioned thermosetting resin; and a flux (7) The adhesive film according to the above aspect, wherein the weight average molecular weight of the oligomer compound is 1,000 or more and 15 or less. (3) As described in (1) or (2) In the above-mentioned oligo compound, at least one selected from the group consisting of an acrylic resin, an epoxy resin, and a phenol resin is selected. (4) For example, (1) The adhesive film according to any one of (1) to (4), wherein the film-forming resin contains an acrylic resin or a phenoxy resin. The adhesive film according to any one of the above aspects, wherein the thermosetting resin is contained in the adhesive film according to any one of the above aspects of the present invention. (6) The adhesive film according to (6), wherein the oligomer compound has a group which reacts with the epoxy resin or the phenol resin. (8) Adhesive as described in (6) or (7) In the above-mentioned film-forming resin, the film-forming resin has a group which reacts with the above-mentioned epoxy resin or a resin. (9) The adhesive film as recited in any one of (1) to (8), wherein The content of the oligomeric compound is 1% by weight or more and 3% by weight or less based on the total of the resin composition containing the above-mentioned thermosetting property and the film-forming property. . (10) The adhesive film according to any one of the above aspects, wherein the film-forming resin is contained in an amount of the above-mentioned thermosetting resin, the film-forming dendrimer, the above-mentioned polymer compound, and the above Resin active compound resin group 098144704 5 201031730 The whole product is 10% by weight or more and 5% by weight or less. (11) The adhesive film according to any one of (1), wherein the oligomer compound has compatibility with the film-forming resin. (12) The adhesive film according to any one of (1) to (11), wherein the 15 Å has a melt viscosity of 10 Pa·s or more and 1 or less 〇〇〇Pa·s or less. The adhesive film according to any one of (1) to (12) wherein the minimum melt viscosity is O.lPa · s or more and 10 or less _Pa · s or less. The adhesive film according to any one of (1) to (13), wherein the thermosetting resin, the film-forming resin, the oligomer compound, and the active compound of the above-mentioned agent are contained. In the entire resin composition, the ratio (Wa/Wb) of the film-forming resin content Wa and the oligomer compound content Wb is 0.2 or more and 20 or less. The adhesive film according to any one of (1) to (14), wherein the weight average molecular weight of the film-forming resin is Na, and the weight average molecular weight of the polymerizable compound is Nb. And when the Na/NbS is 1,000, the resin composition containing the thermosetting resin, the film-forming resin, the oligomer compound, and the flux active compound as a whole, the above-mentioned polymerizable compound The content Wb is 1% by weight or more and 30% by weight or less. (16) The adhesive film according to any one of (1) to (15) wherein the flux-active compound is pheno- phthalocyanine. (17) The adhesive film as described in any one of (1) to (16) further containing a filler. (10) The adhesive film according to the above aspect, wherein the filler is contained in an amount of the thermosetting resin, the film-forming resin, the oligomer compound, the flux active compound, and 0.1% by weight or more and 80% by weight or less of the entire resin composition of the filler. The adhesive film according to any one of (1) to (18), wherein the first semiconductor component having a solder layer on the surface thereof and the second semiconductor component having the electrode of the metal layer on the main surface, The surface of the first semiconductor component and the main surface of the second semiconductor component are bonded using an adhesive layer. (20) A multilayer circuit board using the cured material of the adhesive film according to any one of (1) to (19), and the circuit board and the circuit board (9) - a semiconductor component, (1) to (19) ^ = The hardened material of the adhesive film described is adhered to the semiconductor element and the semiconductor element. 〇(22)-a kind of semi-conductive _ part' is a cured product of the adhesive film described in any one of (1) to (19), and the semiconductor wafer of the semiconductor layer of the financial layer and the electrode of the metal layer are adhered. . 〃 (9) - The semiconductor cured product '1(1)) is a hardened material of the adhesive film described in any one of the items, and is provided with a solder layer of a semi-a««, a wafer, and a semiconductor with a metal layer electrode. The wafer is adhered. < (24) A semiconductor device is used to adhere a semiconductor element to a substrate by using a hardened material of the adhesive film as described in any one of (1) to (1 effect of the imine amine k) 098144704 201031730 According to the present invention 'Adhesive film, multilayer circuit board, semiconductor component, and semiconductor device excellent in electrical resistance reliability and resin ion exchange resistance after sealing. The above objects, other objects, features and advantages are achieved by the above The following description of the preferred embodiment and the following drawings will be further described. [Embodiment] Hereinafter, an adhesive film, a multilayer circuit substrate, a semiconductor component, and a semiconductor device of the present invention will be described. The adhesive film is characterized by containing a thermosetting resin having a weight average molecular weight of less than 1,000, a film-forming resin, an oligomer having a weight average molecular weight smaller than a film-forming resin and having a weight average molecular weight larger than that of a thermosetting resin. A compound and a co-agent active compound. Further, the multilayer circuit board of the present invention is characterized by: In the cured product of the adhesive film, the circuit board and the circuit board are adhered. The semiconductor component of the present invention is characterized in that the semiconductor element and the semiconductor element are adhered by the cured product of the adhesive film described above. The semiconductor device of the present invention is characterized in that the semi-navigation member and the substrate are adhered by the cured product of the adhesive film described above. (Adhesive film) First, the adhesive film will be described in detail. The adhesive film is characterized by containing · Thermosetting resin with a weight average molecular weight of less than a lion, a oligo with a weight average molecular weight of less than 098144704 201031730 j film/•sheng tree and having a weight average molecular weight greater than that of the thermosetting wax The compound and the flux active compound are excellent in the balance between the solder joint property and the film formability, and in other words, the adhesive film is excellent in electrical reliability and resin-sub-migration property after sealing. Furthermore, the adhesive film of the present invention is characterized by comprising a thermosetting resin, a film-forming resin, and a silk compound. And a soldering freshening compound containing an epoxy resin and a transesterified resin, and having a weight average molecular weight of a full surface. The film-forming resin has a reaction with the above epoxy resin or the above-mentioned resin. The oligomer-based compound has a weight average molecular weight smaller than that of the above-mentioned film-forming resin and has a weight average molecular weight larger than that of the above-mentioned chemical resin. The adhesive film of the present invention is composed of a resin composition containing such a thermosetting resin, a film-forming resin, an oligomer compound, and a flux active compound. The resin composition may further contain a filler. The group consists of a thermosetting resin, whereby the film is cured to have excellent heat resistance. The thermosetting resin of the present invention contains at least a ring (10) grease and a resin. Other examples of the thermosetting resin include oxetane resin (: xetaneresin), (meth) acetoacetate resin, unsaturated polyester resin, benzoic acid diisopropyl vinegar resin, and cis-butane. Diluted into an imine resin. Epoxy resin 098144704 201031730 is suitable as a thermosetting resin from the viewpoints of excellent curability, preservability, and heat resistance, moisture resistance, and chemical resistance of the cured product. The weight average molecular weight of the thermosetting resin is not particularly limited, but is preferably less than 1,000, more preferably 100 to 900, and particularly preferably 150 to 80 Å (hereinafter, "~" is included unless otherwise stated. Limit and lower limit). Within the above range, high reactivity at the time of thermal curing of the adhesive film can be obtained, and the melt viscosity of the adhesive film can be lowered, thereby improving solder jointability. The content of the thermosetting resin is preferably from 20 to 80% by weight, more preferably from 30 to 70% by weight based on the total of the above resin composition. If the content is within the above range, good hardenability can be obtained, and good (four) behavioral design can be performed. The resin composition described above contains a film-forming resin which enhances the film formability of the film. By this, the film formation state tends to be easy, and the mechanical properties of the film are excellent. The test resin of the present invention has a group which is incompatible with the epoxy resin wire in the above thermosetting resin. The production of the contact system is as follows: epoxy (tetra), recording, county, amine and so on. Thereby, the compatibility of the resin composition in the adhesive film is improved. The above-mentioned film-forming tumbling may, for example, be: (decene olefinic acid _lipid, phenoxy resin, polylysate, polyurethane urethane, imine resin, diarrhea oxidized poly phthalimide resin, Polybutadiene, polypropylene, styrene-butadiene-stuppy m-ethylene-butylene-styrene copolymer, polyalcoholic tree polybutylene, polyethyl decyl condensate (tetra) oxime, butyl Rubber, gas butyl-thin rubber, "Amine tree, (4) nitrile-butadiene copolymer, B-Wan-Ding 098144704 201031730 mono-acrylic copolymer, acrylonitrile _ Ding Err And polyvinyl acetate s 曰 尼龙 尼龙 尼龙 尼龙 尼龙 尼龙 尼龙 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚. The amount of the average molecular weight of the above-mentioned adult resin (4) is not determined, preferably more than 10,000, more preferably 30,000 to 10,000, and particularly preferably 40,000 to 900,000. If the weight average molecular weight is in the above range, It is more preferable to improve the film formability. Ο ❹ The content of the above-mentioned difficulty _ is not limited to _, and the recorded system accounts for 5 to 5 % by weight of the entire resin composition. More preferably, it is 1% to 4% by weight, and particularly preferably 15 to 35% by weight. If the content is within the above range, the fluidity of the resin component before the adhesive film is melted can be suppressed, and the handling of the film can be easily facilitated. The above-mentioned resin city system contains an oligomer compound, and the compound of the county (4) has a weight average molecular weight smaller than the above-mentioned heterogeneous, and has a weight average molecular weight larger than that of the above thermosetting resin. When the compound is added (10), the residual viscosity can lower (4) the melt viscosity of the test composition, and the compatibility of the resin composition can be improved. Therefore, the solder joint property of the adhesive film can be further improved. Here, the adhesive film of the present invention is applied. The technical significance (1), (ii) of the oligomer compound is described in detail below. The adhesive film of the present invention contains the above oligomer compound, (1) because the oligomer compound has a molecular weight lower than that of the film-forming resin. Therefore, the overall weight average molecular weight of the resin composition in the adhesive film is lowered; 098144704 11 201031730 (ϋ) The resin composition in the adhesive film is introduced into a resin having a film-forming resin. Between the low-molecular weight of the thermosetting resin and the oligomeric compound of the medium-sized molecule: Therefore, the melting viscosity of the resin composition can be lowered by (1), and the resin composition can be lifted by (ii) The compatibility of the resin is reduced by the melting viscosity of the resin and the compatibility with the resin composition, so that the solder joint property of the adhesive film can be improved (the reliability of the connection of the semiconductor device). The technical level of the oligomer compound is described in the prior art. When the oligomer compound is not contained, the adhesive film has a high melt viscosity because of the high molecular weight. The resin in the adhesive film between the bonding bumps is less likely to be excluded, and there is a feeling of poor bonding. On the other hand, in the present invention, a polymerizable compound having a lower molecular weight than the above-mentioned film-forming resin is mixed. Thereby, the melt viscosity of the above resin composition can be lowered, and the solder joint property of the adhesive film can be improved. Further, even if the oligomer compound is mixed, the film formability by the film-forming resin described above is not lowered. Further, in order to reduce the melt viscosity of the resin composition, even if the content of the low molecular weight thermosetting resin is increased, the melt viscosity of the resin composition can be lowered, but it is presumed that the low molecular weight thermosetting resin and the high molecular weight are contained. The compatibility of the resin composition of the membranous tree sap is still kept low. Therefore, the resin in the adhesive film between the bonding bumps 098144704 12 201031730 is less likely to be excluded, and it is judged that the bonding failure occurs. In the present invention, the resin composition in the adhesive film is introduced between a still molecular weight film-forming resin and a low molecular weight thermosetting resin, and is a medium-weight molecular weight polymer compound. Thereby, the molecular weight distribution of the resin composition becomes more continuous, the compatibility of the resin composition can be improved, and the solder joint property of the adhesive film can be improved. The weight average molecular weight of the above oligomer compound is not particularly limited, and is preferably 1,000 to 15,000 Å, more preferably 1,200 to 12,000. If the weight average molecular weight is less than the above lower limit, the effect of improving the film forming ability may be lowered. On the other hand, if the weight average molecular weight is exceeded, the effect of lowering the melt viscosity may be lowered. Here, the weight average molecular weight can be measured, for example, using a gel permeation chromatography (GPC). Further, the oligomer compound of the present invention has a group (functional group) capable of reacting with an epoxy resin or a phenol resin in the thermosetting dendritic ruthenium. The reaction-forming group is, for example, a glycidyl ether group, a hydroxyl group, a carboxyl group, an amine group or the like. Thereby, the compatibility of the resin composition in the adhesive film is improved. The oligomer compound of the present invention contains an acrylic resin, an epoxy resin, a phenol resin or the like. The oligomer compound may also contain more than one of these resins. Further, examples of the acrylic resin include acrylates such as acrylic acid, methacrylic acid, methyl enoate, and ethyl acrylate; and methacrylic acid methacrylate 098144704 13 201031730 methacrylate such as ethyl acrylate. A polymer oligomer such as acrylonitrile or acrylamide, or a copolymer oligomer such as a monomer thereof. Further, the acrylic resin (acrylic oligomer) A, preferably a person (copolymerizable monomer component), belongs to an acrylic oligo having an epoxy group, a thiol group, a aryl group, a group, or the like. More preferably, the polymer has an acrylic polymer having at least one of a carboxyl group or a glycidyl group. Thereby, the adhesion to the adherend such as the semiconductor element can be further improved. Further, the oligomer compound may be a compound having a functional group compatible with a thermotropic gamma, a copolymer oligomer with another monomer, or the like. Here, the compound having a functional group may, for example, be a methacrylic acid epoxidized propyl group having a glycidyl ether group, a transmethyl methacrylate having a carboxyl group, a carboxy acrylate having a carboxyl group, or the like. Nitrile-based acrylonitrile and the like. Further, the oligomer compound is not particularly limited, and is preferably compatible with the film-forming resin. Particularly preferred oligomeric compounds have functional groups which are compatible with the film-forming resin. Thereby, the joint reliability can be further improved. Such a compatible combination is, for example, a film-forming resin which is a combination of a buprophytic acid type = a fat and a polymerized polymer compound, and a film-forming resin which is a phenoxy resin and a polymer. The compound is an epoxy oligomer or a combination of oligomers and the like. The content of the oligomer compound is not particularly limited, and is preferably i% by weight, more preferably 2 to 25% by weight based on the entire composition of the above-mentioned composition. If the content is less than the above lower limit, the melt viscosity may increase. On the other hand, if 098144704 201031730 exceeds the above upper limit, the film formability may be lowered. • The oligomer compound is not limited to (4), and it is preferred that the adhesive viscosity of the adhesive film is set to 10 to Looopa.s, more preferably 2 to 9〇〇pa·s. When the melt viscosity of the adhesive film is within the above range, the solder joint property is particularly excellent. The above oligo compound is not limited, and it is preferred to set the minimum melt viscosity of the adhesive film to 0.1 to 1 〇, 〇〇〇pa.s, more preferably 〇5 to 5 〇〇〇pa.s. By.减 By reducing the minimum melting of the adhesive film to the above-described range, the solder joint property is particularly excellent. Further, the polymerizable compound is appropriately selected depending on factors such as the thermosetting resin constituting the adhesive film, the type of the film-forming resin, and the formulation. The ratio (Wa/Wb) of the film-forming resin content Wa and the polymerizable compound content Wb in the entire resin composition is not particularly limited, but is preferably 0.2 to 20, more preferably 0.25. ~18. When the ratio is set in the above range, the melt viscosity of the resin composition is lowered in particular, so that it is easy to remove the adhesive film between the joint terminals, and the solder joint property (reduced resin occlusion) is excellent. In addition, the weight average molecular weight of the film-forming resin is Na, the weight average molecular weight of the oligomer compound is made to be, and Na/Nb$1, when 〇〇〇 is in the entire resin composition. The content Wb of the oligomer compound is preferably 1 to 30% by weight, more preferably 2 to 25% by weight. Further, Na/Nb is more than 1, more preferably 5 or more. When the content is in the range of 098144704 15 201031730, the melt viscosity of the resin composition is particularly low, so that it is easy to remove the adhesive film between the joint terminals, and the solder joint property (reduced resin occlusion) is excellent. The above resin composition contains a flux active compound. Thereby, good solder bonding can be performed. When the above-mentioned resin composition is melted, the flux active compound reduces the oxide film on the surface of the solder bump, thereby improving the wettability of the solder component constituting the solder bump, and for example, can reduce the relative interior between the semiconductor element and the substrate. The electrode is coupled to the resistance value. The flux-active compound may, for example, be a phenolic hydroxyl group or a carboxyl group-containing compound. Phenol, Y-phenol, 2,6_ The above-mentioned compounds containing a phenolic hydroxyl group are, for example,: dimethyl sulfonate, acesulfame, dioxin, orthophenone, 2m 2, 5"; xylenol, bis Phenol, 2,3-di-f-phenol, metophenol (mesit〇i), 3,5-xylenol, p-butadiene, o-phenylene, p-third filament, isophthalene, p-octyl ^等^本基龄,双纷A, 双盼F, 双纷AF, 双盼,二妇单^类.sT-dipropyl propyl double A, hope, sputum , Neighbourhood hope _ secret resin, double hope F bisphenol A phenolic resin. The composition of the compound may be, for example, an aliphatic acid anhydride, an aliphatic carboxylic acid, an aromatic carboxylic acid or a phenol. Further, the above-mentioned carboxyl group-containing alicyclic acid if, the acid group, and the like. Here, the aliphatic acid anhydride may, for example, be 098144704: succinic anhydride, polyadipate anhydride, 201031730 polysebacic anhydride, polysebacic anhydride or the like. Examples of the alicyclic acid anhydride include mercaptotetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, mercaptohumic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, and methylcyclohexane. Ethylene ortho-anhydride. Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, diphenyl ketone tetracarboxylic anhydride, ethylene glycol trimellitate, and glycerin trimellitic acid ester. Examples of the aliphatic carboxylic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, trimethylacetic acid, caproic acid, octanoic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, and A. Acrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, didecyl diketo acid, g Diacid and so on. Among them, an aliphatic carboxylic acid represented by HOOC-(CH2)n-COOH (an integer of 0 to 20) is preferred, and more preferably, for example, adipic acid, sebacic acid or dodecanedioic acid. ❹ The aromatic carboxylic acid may, for example, be benzoic acid, citric acid, isophthalic acid, terephthalic acid, 1,2,3·•benzenetricarboxylic acid, trimellitic acid or trimesic acid. , pyromellitic acid, 1,2,3,4-benzenetetradecanoic acid, pyromellitic acid, mellitic acid, triphenyl phthalic acid, dibenzoic acid, 2,3-benzenetricarboxylic acid, 3, 5-xylenecarboxylic acid, 2,3,4-tris-benzoic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, • 2,4-dihydroxybenzoic acid, Gentamic acid (2,5-dihydroxyindole acid), 2,6-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxyphenylhydrazine) Acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,5-2-dihydroxy 098144704 17 201031730 naphthoic acid derivatives such as -2-naphthoic acid. The reduction is ugly, and the active compound of the second acid soldering agent is also promoted by Miyoko, and the gelation time of the film can be lengthened and the conductor parts can be laminated and integrated, so that the productivity is excellent. This is a compound (a) compound which acts as a hardener of a resin component of a thermosetting adhesive film (a hardener having flux activity). That is, the upper phase flux active compound preferably exhibits a compound capable of reducing the oxygen on the surface of the solder bump to a degree of Wei-type bonding with the conductive member, and having a functional group capable of bonding with the resin component (with Flux active hardener). For example, when the resin component contains an epoxy resin, the hardening property having the difficulty of soldering can have a filament and a group capable of reacting with an epoxy group (e.g., an ester group, a mercapto group, an amine group, etc.). The hardener having flux activity thereby exhibits a function of reducing the oxide film on the surface of the solder bump to an electrical joint with the conductive member at the time of solder coupling, and can be taken in a subsequent hardening reaction. Into the resin skeleton. Therefore, the step of flux cleaning can be omitted. When the conventional flux active compound is used alone, when the flux is insufficiently washed, the metal constituting the solder bump becomes a metal ion due to the remaining flux active compound and dissolves in the resin. When the metal ions dissolved in the resin move between the electrodes when a voltage is applied, there is a possibility that the adjacent terminals are short-circuited (ion migration). In contrast, when a hardener having the flux activity as described above is used, since the flux active compound is taken into the resin skeleton by 098144704 18 201031730, it remains in the form of a flux active compound, which can be reduced by 4 as the above metal. The generation of ions suppresses the occurrence of ion migration. The content of the flux-active compound is not particularly limited, and is preferably 3% by weight, more preferably 3 to 5% by weight, based on the total amount of the resin composition. If the content is in the above range, the oxide film on the surface of the solder bump can be sufficiently reduced to the extent that the tantalum is electrically joined. 6 ❿ The above-mentioned flux active compound may be used singly or in combination of two or more kinds, and the three valences of δ are in the range of 1 to% by weight, preferably 3 to 18% by weight, based on the entire resin composition. Good 5 to 15% by weight. If it is within this range, the oxide film on the surface of the solder bump can be sufficiently reduced to the extent that it can be electrically joined. When the domain fat component is hardened, it can be efficiently added to the resin, and the elastic modulus of the resin can be improved. Number or Tg. Further, it is possible to suppress the occurrence of ion migration caused by the hardener having an unreacted co-agent activity. In addition to the above-mentioned thermosetting resin, film-forming resin, oligomer compound, flux active compound (hardener having flux activity), a hardener or a hardening accelerator may be added to the above-mentioned composition of the tree. , Shi Xi siu coupling agent, and various kinds of additions (4) and (4) for the promotion of tree m, miscellaneous, mosquito, etc. Examples of the curing agent include, for example, age, amines, and mercaptans. These are required to be matched. The factors such as the type of the thermosetting tree to be used may be appropriately selected. For example, when an epoxy resin is used for the thermosetting tree (4), the hardened sword system 098144704 201031730 can obtain a good reactivity with the epoxy resin, a dimensional change at the time of hardening, and a suitable physical property after the modification (for example, The view of financial heat, moisture resistance, etc. 'is best used. The mosquito which is used in the present invention has no particular mosquito, and it is preferably a bifunctional group or more from the viewpoint of excellent physical properties after the adhesive tape is hardened. For example, ·················································································· Hope for acid, and hope for a class. Among them, 'from the viewpoint of melting reduction and reactivity with an epoxy resin, and excellent physical properties after hardening, it is preferable to use a class of secrets and a class of __. The blending of the above-mentioned hard H may be carried out in accordance with the type of the curable resin or the hardening agent to be used, or the type and amount of the curing agent having the activity of the auxiliary agent. For example, in the case of hardening (4), it is preferable that the amount of the compounding amount is from 5 篁/〇 or more, more preferably up to 1 相对, from the viewpoint of surely curing the curable resin. weight. /. the above. If there is a residual age __ that does not react with the epoxy resin, it will become a cause of ion migration. Therefore, the zebra will not remain in the form of residue, preferably 30% by weight or less, more preferably 25% by weight. /❶The following. The dosage of the phenol-phenolic resin can be determined according to the equivalent ratio of the oxygen resin. For example, the resin is 0.5 to 1.2, preferably 0.6 to 1.1, more preferably 〇.7 to 〇98. The phenol-phenolic resin equivalent ratio of the comparative resin is set to 耐热.5, and the heat resistance and moisture resistance after the stomach is cured with respect to the epoxy. On the other hand, by changing the equivalent ratio to 1.2 to 098,144,704, 20, 2010,317, 30, the amount of residual phenolic phenolic resin which has not reacted with the epoxy resin after curing is excellent, and the ion mobility is good. One type of the hardening agent such as δ hai may be used, or two or more types may be used in combination. Further, the resin composition may further contain a curing accelerator. The hardening promotion 胄j system can be appropriately selected in accordance with factors such as the type of the curable resin. Hardening accelerators can be used, for example, up to 15〇 <t or more of the salivary compound. If the hardening of the hardening is 15m, the soldering component of the solder bump will be moved before the hardening of the adhesive film is completed, and the surface of the electrode can be moved on the semiconductor element. The electrically-coupled miso compounds having a good melting point of 150 C or more are, for example, 2_phenylhydroxyimidazole, 2_styl- 4-mercaptohydroxyimidazole, and the like. The amount of the soil hardening accelerator can be appropriately selected, for example, when the hardening promotes the use of rice. The mud of the compound is preferably 〇. 005 to 10% by weight, more preferably 0.01 to 5% by weight based on the total of the above resin composition. By setting the blending amount of the oxime compound to 0% by weight or more, the hardening promoting function can be more effectively exhibited, and the adhesion and hardenability can be improved. In addition, when the blending amount of the solder paste is 1 G weight% or less, the melt viscosity of the resin does not become too high at the melting temperature of the solder component constituting the solder bump, and the solder joint of the solder can be excellent. structure. And 'can improve the preservation of the adhesive film. One type of hardening accelerator such as a celite may be used, or two or more types may be used in combination. Further, the above resin composition may further contain a decane coupling agent. By 098144704 21 201031730 By containing a mixture of dreams (4), it is possible to improve (4) the film to the semiconductor elements, substrates and other adherents. For the Shi Xixuan coupling agent, for example, an epoxy oxime coupling agent, an aromatic amine-containing decane coupling agent, or the like can be used. These systems can be used in two or two types: two or more types can be used in combination. The blending amount of the shochu coupling agent can be appropriately selected, and the weight of the resin composition as a whole is preferably 〜1 to 1 〇, I, more preferably 0.05 to 5% by weight, particularly preferably 11 to 2 by weight. %. The above resin composition may further contain an inorganic filler. Thereby, the coefficient of linear expansion of the adhesive film can be lowered, thereby improving reliability. The inorganic filler is, for example, silver, titanium oxide, dioxane, cloud, or the like, and among these, dioxotomy is preferred. Further, the dioxo-cut filler: the shape is a broken dioxane and a spherical dioxane, preferably a spherical dioxide. The average particle diameter of the inorganic filler is not particularly limited, and is preferably 〇〇ι or more, screaming, more preferably Μ-above, and 5 or less. By setting it as the above range, it is possible to suppress the aggregation of the filler in the adhesive film, and it is possible to improve the inorganic filler _ content without limitation. (4) The entire resin composition is preferably G.1 to 80. % by weight, more preferably 10 to 70% by weight. The film can be peeled off because the number of the adhesion between the cured adhesive film and the line to be negotiated becomes smaller, and the stress generated during thermal shock can be reduced. Moreover, since the adhesion after hardening can be suppressed from becoming too high, the reliability of the casting device will be increased by 098144704 22 201031730 liters. Next, a method of producing the adhesive film of the present invention will be described. The varnish obtained by mixing the resin composition as described above in a solvent is applied onto a substrate subjected to a release treatment such as a polyester sheet, and dried at a predetermined temperature until the solvent is substantially not contained. The adhesive film is obtained. The solvent used herein is not particularly limited until it is inactive, and may be suitably used, for example, acetone, ethyl acetate, thiol isobutyl ketone, DIBK (diisobutyl ketone). ), ketones such as cyclohexane J, DAA (diacetone alcohol); aromatic hydrocarbons such as benzene, dioxane, and stupid; alcohols such as methanol, ethanol, isopropanol, and n-butanol; Su, Ethyl citrate, butyl acesulfame, methyl ceramide, ethyl acesulfame acetate, etc.; SiMP (N-mercapto-2-pyrrolidone), THF (tetrahydrofuran), DMF (dimethylformamide), DBE (dibasic acid ester), EEP (ethyl 3-ethoxypropionate), DMC (didecyl carbonate), and the like. The amount of the solvent to be used is preferably in the range of 10 to 60% by weight based on the component ❹ solid content mixed in the solvent. The thickness of the obtained adhesive film is not particularly limited, but is preferably 1 to 3 μm, more preferably 5 to 2 μm. When the thickness is within the above range, the resin component can be sufficiently filled in the gap of the joint portion to ensure the mechanical adhesive strength of the resin component after curing. The 150 C melt viscosity of the adhesive film is not particularly limited, and is preferably 'OOOPa s, more preferably 20 to 800 Pa · s. When the melt viscosity is within the above range, it is particularly excellent in solder jointability. More specific instructions. If at 15 〇. In the case of the alignment of the solder layer and the metal electrode, it is easy to remove the adhesive film between the upper and lower bonding terminals, and solder bonding ( Excellent in reducing resin occlusion). Further, if it is at least the lower limit of the melt viscosity at 150 °C, the bleeding of the adhesive film and the occurrence of voids can be alleviated. Further, the lowest melt viscosity of the adhesive film is not particularly limited, but is preferably 0.1 to 10,000 Pa · s, more preferably 0.5 to 5,000 Pa · s. When the minimum melt viscosity is within the above range, in particular, the solder joint property is excellent. More specific instructions. When it is less than the upper limit of the minimum melt viscosity, it is easy to remove the adhesive film between the upper and lower bonding terminals during the soldering of the solder layer and the metal electrode, and the solder bonding property is reduced. The bite is excellent. Further, if it is at least the lower limit of the minimum melt viscosity, the bleeding of the adhesive film and the occurrence of voids can be alleviated. The melt viscosity of the adhesive film was measured using a viscoelasticity measuring device ("Rheo Stress RS150" manufactured by HAAKE Co., Ltd.) in accordance with a condition of a parallel plate of 2Omm0, a gap of 0.05 mm, a frequency of 0.1 Hz, and a temperature increase rate of 10 ° C / min. The value at which the melt viscosity and the melt viscosity at C were the smallest was taken as a measured value. The adhesive film thus obtained has flux activity. Therefore, the adhesive film of the present invention is a first semiconductor component in which a solder layer is provided on the surface, and a second semiconductor component in which an electrode having a metal layer is provided on the main surface, and the surface of the first semiconductor component and the second semiconductor component are used. The adhesive layer of 098144704 24 201031730 is bonded to the surface. The i-th semiconductor component and the second semiconductor component can be, for example, a semiconductor element and a substrate, a circuit board and a circuit board, a semiconductor element and a semiconductor element, a semiconductor wafer having a solder layer, and a semiconductor crystal having an electrode with a metal layer. A circle; a semiconductor wafer provided with a tin layer; and a semiconductor wafer provided with an electrode having a metal layer. The adhesive film of the present invention is quite suitable for coupling a solder between such a solder layer and a metal electrode as a coupling portion of a necessary member. Next, a multilayer circuit board, a semiconductor component, and a semiconductor device using the above-described adhesive tape will be described. Fig. 1 is a cross-sectional view showing an example of a method of manufacturing a + conductor device. As shown in Fig. 1, a semiconductor element 1 having a solder bump 11 (solder layer) is prepared (Fig. 1 (a)). The above-mentioned adhesive film 2 having a function as a helping agent is laminated by a method of covering the solder bumps U of the semiconductor element ( (Picture). The crucible method of laminating the adhesive film 2 having the auxiliary agent function on the semiconductor element i can be, for example, roll lamination, flat lamination, wafer lamination or the like. Among these, in order to be able to wind the air in the forest, it is preferable to adopt a method of laminating under vacuum (vacuum lamination). The conditions for the layering are not limited, as long as the layer can be deposited without holes, specifically preferably 6〇~15〇«>Cxl seconds~1 seconds, better 8 〇~^ < ‘ L ^ 5~60 seconds. If the lamination condition is within the above range, the adhesion, the suppression effect of the orange "t,, & mountain 4 曰 / extra, and the balance between the hardening degree of the resin are excellent. ^ 098144704 25 201031730 Furthermore, there is no special pressure condition. The limit is preferably 〇2 to 2. 〇 MPa, more preferably 0.5 to 1.5 MPa. Next, a portion of the solder bump U corresponding to the semiconductor element 1 is prepared, and a pad portion (not shown) is provided on the main surface ( The substrate 3 (circuit board) having the electrode of the metal layer is temporarily pressed by the adhesive film 2 having the flux function while performing the alignment of the semiconductor element 1 and the substrate 3 (Fig. i(c)). The conditions of the crimping are not particularly limited, and are preferably 6 〇 to 15 〇. 〇χ 1 second to 12 〇 seconds, more preferably 80 to 120 〇 5 to 60 seconds, and the pressing conditions are not particularly limited. Preferably, it is 0.2 to 2.0 MPa, more preferably 5 to 1.5 MPa. Next, the solder bump 11 is melted to form a solder coupling portion 111 for solder bonding with the pad (Fig. 1 (d)). The conditions for solder coupling are also different depending on the type of solder used. For example, the case of Sn-Ag is better. Line 220~260. 〇5~500 seconds heating for solder coupling, more preferably 230~24 (TCxl〇~1〇〇 second heating. The solder bonding is preferably after melting the solder bump u Adhesive film

2硬化的條件實施。即，焊錫接合較佳係在使焊錫凸塊U 融解’但黏著膜2的硬化反應尚未如何進行之條件下實施。 藉此，可將施行焊錫耦接時的焊錫耦接部之形狀，形成耦接 可靠度優異的安定形狀。 其次，將黏著膜2加熱而硬化。使硬化的條件並無特別的 限定，較佳130〜220。〇30〜500分鐘、更佳 098144704 201031730 150〜200°C x60〜180 分鐘。 依此的話，便可獲得半導體元件1與基板3利用黏著膜2 的硬化物進行黏著之半導體裝置1〇。因為半導體裝置仞係 利用如上雜著膜2的硬化物進行黏著，因此魏式麵接可 靠度優異。 再者，依照同樣的方法’將電路基板與電路基板利用黏著 膜的硬化物進行接合，便可獲得多層電路基板。 〇 #者，個同樣的方法’將半導體元件與半導體元件利用 黏著膜的硬化物進行黏著，便可獲得半導體用零件。 再者，依照同樣的方法，將設有焊錫層的半導體晶片與 設有具金屬層之電極的半導體晶圓，利用黏著膜之硬化物進 行黏著’便可獲得半導體用零件；且將設有焊錫層的半導體 晶圓、與設有具金屬層之電極的半導體晶圓，利用黏著膜的 硬化物進行黏著，便可獲得半導體用零件。 ❿減’使用切割刀，將半導體零件間施行切斷，將零件個 片化便獲得半導體裝置。另外，本實施形態中，雖將複數半 導體零件施行統括積層，惟本發明並不僅侷限於此，亦可將 主要的半導體零件進行統括積層後，才搭載其他的零件。 以下，敘述本發明的其他實施形態。 (1)一種黏著膜，其特徵在於由含有：熱硬化性樹脂、提 升薄膜成膜性的成膜性樹脂、較上述成膜性樹脂低分子量的 寡聚物化合物、以及助焊劑活性化合物的樹脂組成物構成。 098144704 27 201031730 (2) 如（1)所記載之黏著膜，其中，上迷裳 务聚物化合物的重 量平均分子量係1，000〜15,000。 (3) 如（1)或（2)所記載之黏著膜，其中，上什舍甘 上地泰聚物化合物 的含有量係佔上述樹脂組成物整體的1〜3〇 i 里篁％。 (4) 如（1)至(3)中任一項所記載之黏著骐，其中，上述寡聚 物化合物係具有與上述成膜性樹脂的相溶性。 (5) 如（1)至(4)中任一項所記載之黏著膜，其十，上述寡聚 物化合物係將黏著膜的15(TC熔融黏度設為1〇〜1〇⑼pa.s。 〇 (6) 如（1)至(5)中任一項所記載之黏著膜，其中，上述樹脂 組成物整體中的上述成膜性樹脂含有量Wa、與上述寡聚物 化合物含有量Wb的比(Wa/Wb)，係0.2〜20。 (7) 如（1)至(6)中任一項所記載之黏著膜，其中，將上述成 膜性樹脂的重量平均分子量設為Na、將上述寡聚物化合物 的重量平均分子量設為Nb，且Na/NbSl，〇00時，上述樹脂 組成物整體中的上述募聚物化合物之上述含有量wb係❹ 1〜30重量％。 (8) 如（1)至（7)中任一項所記載之黏著膜，其中，上述成膜 性樹脂係含有丙稀酸系樹脂。 (9) 如（1)至（8)中任一項所記载之黏著膜，其令，上述寡聚 物化合物係含有丙烯酸系寡聚物。 (10) —種多層電路基板，係利用上述（1)至（9)中任一項所 記載之黏著膜的硬化物，將電路基板與電路基板進行接合。 098144704 28 201031730 (11) —種半導體用零件，係利用上述（1)至（9)中任一項所 記載之黏著膜的硬化物，將半導體元件與半導體元件進行黏 著。 (12) —種半導體裝置，係利用上述（1)至(9)中任一項所記 - 載之黏著膜的硬化物，將半導體元件與基板進行黏著。 [實施例] 以下，針對本發明根據實施例與比較例進行詳細說明’惟 0 本發明並不僅侷限於此。 (實施例1) <黏著膜之調製> 將熱硬化性樹脂：環氧樹脂（日本化藥股份有限公司製、 NC6000、重量平均分子量：600)44.5重量份與酚樹脂 (SUMITOMO BAKELITE公司製、PR-53647、重量平均分子 量：570)10重量份、成膜性樹脂：（甲基）丙烯酸系樹脂[丙 ❹ 烯酸酯共聚物（丙烯酸乙酯-丙烯酸丁酯-丙烯腈-丙烯酸-甲 基丙烯酸羥乙酯共聚物）、Nagase ChemteX公司製、 SG-708-6、Tg : 6°C、重量平均分子量：800,000]20重量份、 寡聚物化合物：具有羧基的苯乙烯丙烯酸共聚物（寡聚物1、 * 東亞合成股份有限公司製、UC-3900、重量平均分子量： • 4,600)10重量份、助焊劑活性化合物（具有助焊劑活性的硬 化劑）：還原酚酞(東京化成工業公司製）15重量份、硬化促 進劑：咪唑化合物（四國化成股份有限公司製、2P4MZ)0.1 098144704 29 201031730 重量份、以及石夕烧偶合劑：2-(3,4-環氧環己基）乙基三甲氧 基石夕烧（環氧石夕烧、信越化學股份有限公司、KBM-303)0.4 重量份’溶解於曱乙酮(MEK)中，獲得樹脂清漆。 將所獲得的樹脂清漆，在基材聚酯膜(TORAY股份有限公 司製、Lumirror)上塗佈呈厚度50μιη狀態，施行i〇〇°c、5 分鐘乾燥，獲得厚度25μηι具有助焊劑活性的黏著膜。 <半導體裝置之製造> 在具有焊錫凸塊的半導體元件（尺寸1〇mmxl〇mm、厚度 ◎ 0.3mm)上’將所獲得黏著膜利用真空輥貼面壓機依 行積層’獲得具有黏著膜的半導體元件。 接著，一邊使具有焊墊的電路基板之焊墊、與焊錫凸塊依 相抵接的方式進行對位，一邊在電路基板上將半導體元件依 100°C、30秒鐘施行暫時壓接。 其次，施行235 C、30秒鐘加熱，使焊錫凸塊熔融而施行 焊錫耦接。 q 然後，轭行180 C、60分鐘加熱，使黏著膜硬化，便獲得 半導體兀件與電路基板利用黏著膜的硬化物進行黏著之半 導體裝置。 (實施例2) 在樹脂清漆的調製中’除寡聚物化合物係使用下述化合 物，且將調配量設為如下述之外，其餘均如同實施例1。 使用熱硬化f生树脂.環氧樹脂（日本化藥股份有限公司 098144704 30 201031730 製、NC6000、重量平均分子量：6〇〇)44 5重量份、與酚樹 脂（SUMITOMO BAKELITE公司製、pr_53647、重量平均分 子量：570)10重量份、成膜性樹脂：（甲基）丙烯酸系樹脂[丙 稀酸酯共聚物（丙烯酸乙酯-丙烯酸丁酯_丙烯腈_丙稀酸_曱 基丙烯酸羥乙酯共聚物）、Nagase ChemteX公司製、 SG-708-6、Tg: 6°C、重量平均分子量：8〇〇,〇〇〇]25重量份、 寡聚物化合物：具環氧丙基的苯乙烯丙烯酸共聚物（募聚物 ❹ 2、東亞合成股份有限公司製、ug-4040、重量平均分子量： 11，000)5重量份、助焊劑活性化合物（具有助焊劑活性的硬 化劑）：還原酚酞(東京化成工業公司製）15重量份、硬化促 進劑：咪唑化合物（四國化成股份有限公司製、2p4MZ)〇1 重量份、以及矽烷偶合劑：2-(3,4-環氧環己基）乙基三甲氧 基石夕炫>(環氧>5夕炫、信越化學股份有限公司、kbm_3〇3)〇.4 重量份。 〇 (實施例3) 在樹脂清漆的調製中，除將調配量設為如下述之外，其餘 均如同實施例1。 使用：熱硬化性樹脂：環氧樹脂（日本化藥股份有限公司 製、NC6000、重量平均分子量：600)44.5重量份、與酚樹 脂(SUMITOMO BAKELITE公司製、pr_53647、重量平均分 子量：570)10重量份、成膜性樹脂：（甲基）丙烯酸系樹脂[丙 稀酸S旨共聚物（丙稀酸乙醋-丙烯酸丁醋_丙烯腈-丙婦酸-甲 098144704 31 201031730 基丙烯酸經乙酯共聚物）、Nagase ChemteX公司製、 SG-708-6、Tg : 6°C、重量平均分子量：800,000]6重量份、 寡聚物化合物：具有羧基的苯乙烯丙烯酸共聚物（寡聚物1、 東亞合成股份有限公司製、UC-3900、重量平均分子量： 4,600)24重量份、助焊劑活性化合物（具有助焊劑活性的硬 化劑）：還原酚酞(東京化成工業公司製）15重量份、硬化促 進劑：咪唑化合物（四國化成股份有限公司製、2P4MZ)0_1 重量份、以及矽烷偶合劑：2-(3,4-環氧環己基）乙基三甲氧 基矽烷（環氧矽烷、信越化學股份有限公司、KBM-303)0.4 重量份。 (實施例4) 在樹脂清漆的調製中，除將調配量設為如下述之外，其餘 均如同實施例1。 使用：熱硬化性樹脂：環氧樹脂（日本化藥股份有限公司 製、NC6000、重量平均分子量：600)44.5重量份、與酚樹 脂(SUMITOMO BAKELITE公司製、PR-53647、重量平均分 子量：570)10重量份、成臈性樹脂：（甲基）丙烯酸系樹脂[丙 烯酸酯共聚物（丙烯酸乙酯-丙烯酸丁酯-丙烯腈_丙烯酸_甲 基丙烯酸輕乙醋共聚物）、Nagase ChemteX公司製、 SG-708-6、Tg : 6°C、重量平均分子量：800,000]28重量份、 寡聚物化合物：具有羧基的苯乙烯丙烯酸共聚物（募聚物1、 東亞合成股份有限公司製、UC-3900、重量平均分子量： 098144704 32 201031730 4，_)2重量份、助焊劑活性化合物（具有助焊劑活性的硬化 劑）：還原酚酜(東京化成工業公司製加重量份、硬化促進 劑：味唾化合物㈣國化成股份有限公司製、洲脱川]重 量份、以及石夕烧偶合劑：2-(3,4_環氧環己基）乙基三甲氧基 魏(環氧魏、信齡學祕有限公5Ί、kbm_3G3)〇 4重 量份。 (實施例5) © 在樹脂清漆的調製中，除將調配量設為如下述之外，其餘 均如同實施例1。 使用.熱硬化性樹|曰.j衣氧樹脂（大日本油墨化學股份有 限公司製、EHCLON-850、重量平均分子量：38〇)44 5重量 份、與酚樹脂（SUMITOMO BAKELITE 公司製、pR_53647、 重里平均分子i · 570)10重量份、成膜性樹脂：苯氧樹脂（東 都化成股份有限公司製、FX_293、重量平均分子量： ❹45,000)15重量份、养聚物化合物：環氧樹脂（寡聚物3、JER 股伤有限公司製、Ep-1002、重量平均分子量：1200)^重 量份、助焊劑活性化合物（具有助焊劑活性的硬化劑）：還原 酚酞(東不化成工業公司製）15重量份、硬化促進劑：咪唑化 合物（四國化成股份有限公司製、2p4MZ)〇3重量份、以及 石夕烧偶合劑：2-(3,4-環氧環己基）乙基三甲氧基矽烷(環氧矽 烷、信越化學股份有限公司、KBM 3〇3)〇 4重量份。 (實施例6) 098144704 33 201031730 在樹脂清漆的調製中，除將調配量設為如下述之外，其餘 均如同實施例1。 使用：熱硬化性樹脂：環氧樹脂（大日本油墨化學股份有 限公司製、EPICLON-850、重量平均分子量：380)44.5重量 份、與酚樹脂(SUMITOMO BAKELITE 公司製、PR-53647、 重量平均分子量：570)10重量份、成膜性樹脂：苯氧樹脂（東 都化成股份有限公司製、FX-293、重量平均分子量： 45,000)15重量份、寡聚物化合物：環氧樹脂（寡聚物4、JER 股份有限公司製、Ep-1010、重量平均分子量：5,500)15重 量份、助焊劑活性化合物（具有助焊劑活性的硬化劑）：還原 酚酞（東京化成工業公司製）15重量份、硬化促進劑：咪唑化 合物（四國化成股份有限公司製、2P4MZ)0.1重量份、以及 矽烷偶合劑：2-(3,4-環氧環己基）乙基三曱氧基矽烷(環氧矽 烧、#越化學股份有限公司、KBM-303)0.4重量份。 (實施例7) 在樹脂清漆的調製中’除將調配量設為如下述之外，其餘 均如同實施例1。 使用：熱硬化性樹脂：環氧樹脂（大日本油墨化學股份有 限公司製、EPICLON-850、重量平均分子量：38〇)44 5重量 份、與酚樹脂（SUMITOMO BAKELITE 公司製、PR-53647、 重量平均分子量：570)10重量份、成膜性樹脂：苯氧樹脂（東 都化成股份有限公司製、FX-293、重量平均分子量： 098144704 34 201031730 45,000)15重量份、寡聚物化合物：酚樹脂（寡聚物5、 SUMITOMO BAKELITE股份有限公司製、PR-51470、重量 平均分子量：2,200)15重量份、助焊劑活性化合物（具有助 -焊劑活性的硬化劑）：還原酚酞(東京化成工業公司製）15重 -量份、硬化促進劑：咪唾化合物（四國化成股份有限公司製、 2P4MZ)0.1重量份、以及矽烷偶合劑：2-(3,4-環氧環己基） 乙基三曱氧基矽烷（環氧矽烷、信越化學股份有限公司、 ❹ KBM-303)0.4重量份。 (實施例8) 在樹脂清漆的調製中，除將調配量設為如下述之外，其餘 均如同實施例1。 使用：熱硬化性樹脂：環氧樹脂（大日本油墨化學股份有 限公司製、EPICLON-850、重量平均分子量·· 380)40重量 份、與酚樹脂（SUMITOMO BAKELITE 公司製、pr-53647、 ❹重量平均分子量：570)9重量份、成膜性樹脂：笨氧樹脂（東 都化成股份有限公司製、重量平均分子量：45,〇〇〇)13 5重 伤、养聚物化合物：環氧樹脂（寡聚物4、jER股份有限公 司製、Ep-1010、重量平均分子量：55〇〇)13 5重量份、助 • 焊劑活性化合物（具有助焊劑活性的硬化劑）：還原酚酞（東京 化成工業公司製）13.5重量份、硬化促進劑：咪唑化合物（四 國化成股份有限公司製、2P4MZ)(U重量份、石夕烧偶合劑： 2-(3,4-環氧環己基）乙基三甲氧基魏(環氧傾、信越化學 098144704 35 201031730 股份有限公司、ΚΒΜ-303)0.4重量份、以及填充材：二氧化 碎填充劑(Admatechs股份有限公司製、SE-l〇5〇-LC)10重量 份。 (實施例9) 在樹脂清漆的調製中’除將調配量設為如下述之外，其餘 均如同實施例1。 使用··熱硬化性樹脂：環氧樹脂（大日本油墨化學股份有 限公司製、EPICLON-850、重量平均分子量：38〇)26 7重量❹ 份、與酚樹脂(SUMITOMO BAKELITE 公司製、pr_53647、 重量平均分子量：570)6重量份、成膜性樹脂：苯氧樹脂（東 都化成版伤有限公司製、FX-293、重量平均分子量：45 〇〇〇)9 重量份、募聚物化合物：環氧樹脂（寡聚物4、JER股份有限 公司製、Ep-1010、重量平均分子量：5,5〇〇)9重量份、助焊 劑活性化合物（具有助焊劑活性的硬化劑)：還原酚酞(東京化 成工業公司製)9重量份、硬化促進劑：咪唑化合物（四國化❹ 成股份有限公司製、2P4MZ)0.1重量份、矽烷偶合劑：2_(3,4_ 環氧環己基）乙基三甲氧基矽烷(環氧矽烷、信越化學股份有 限公司、KBM-303)0.2重量份、以及填充材：二氧化石夕填充 劑(Admatechs股份有限公司製、SE l〇5〇 LC)4〇重量份。 (比較例1) 在樹脂清漆的調製中，除未使用寡聚物化合物，並將配方 設為如下述之外，其餘均如同實施例i。 098144704 36 201031730 使用.熱硬化性樹脂：環氧樹脂（日本化藥股份有限公司 製、NC6000、重量平均分子量：6〇〇)44 5重量份、與酚樹 脂(SUMITOMO BAKELITE公司製、PR-53647、重量平均分 -子量：570)10重量份、成膜性樹脂：（曱基）丙烯酸系樹脂[丙 - 烯酸酯共聚物（丙烯酸乙酯-丙烯酸丁酯_丙烯腈_丙烯酸_曱 基丙稀酸經乙醋共聚物）、Nagase ChemteX公司製、 SG_708-6、Tg: 6。(：、重量平均分子量：8〇〇,〇〇〇]30重量份、 ❹助焊劑活性化合物（具有助焊劑活性的硬化劑）：還原酚酞(東 京化成工業公司製）15重量份、硬化促進劑：咪唑化合物（四 國化成股份有限公司製、2P4MZ)0.1重量份、以及矽烷偶合 劑：2-(3,4-環氧環己基）乙基三甲氧基矽烷(環氧矽烷、信越 化學股份有限公司、KBM-3〇3)〇.4重量份。 針對依各實施例與比較例所獲得半導體裝置，施行以下的 評估。例示評估項目與内容。所獲得結果如表丨所示。 Q 1.離子遷移性 針對依各實施例與比較例所獲得半導體裝置，在l3〇°c、 85%RH環境下，一邊施加5V電壓，一邊連續測定相鄰凸 塊間的絕緣電阻值’並評估離子遷移。各符號係如^ : ' ◎:經500小時後的絕緣電阻值達〗〇E+〇6以上。 〇：100〜250小時的絕緣電阻值降低至丨〇E+〇6以下。 △ : 24小時〜未滿100小時的絕緣電阻值降低至1〇E+〇6 以下。 098144704 37 201031730 X. 0〜未滿24小時的絕緣電阻值降低至1GE+〇 2. 電氣式轉接可靠度 。 針對依各實施例與比較例所獲得半導體裝置各2〇個 在55C條件下3〇分鐘、在125t：條件下3〇分鐘施行、將 曝曬設為1猶環，而施行溫度循環試驗1〇〇循環，針對=錯 驗後的半導體裝置，利用數位式電表測定半導體元件與= 基板的耦接電阻值，而評估電氣式耦接可靠度。各符號係如 下： 〇：20個全部的半導體裝置耦接電阻值均在1〇β以下。 X : 1個以上的半導體裝置耦接電阻值達10Ω以上。 3. 溶融黏度測定方法 黏著膜的溶融黏度係使用黏彈性測定裝置（ΗΑΑΚΕ公司 製「Rheo Stress RSl5〇」）’依平行板 20mm</)、間隙 〇.〇5mm、 頻率0.1Hz、升溫速度10°C/分鐘的條件施行測定，將 的熔融黏度、及熔融黏度成為最小的值設為測定值。 098144704 38 201031730 【1^】 1比較例1 44.5 C3 LO 1 1 (=> o 〇> g Ο 写 1 1 ◎ X |實施例9| 卜 CO CM CO σΰ CJ5 τ—1 cz> C<1 <=5· 〇 <〇 Ο οο οα i—Η 〇0 ◎ 〇 1實施例8 05 LO CO t—H LO CO LO CO r-H 1—^ CD C5 〇 T1· Ή LO CNI LO 1—Η 〇0 ◎ 〇 實施例7 44.5 〇 LO LO LO 1 λ 1—^ CD 呀 CD 卜 οο ^-Η ◎ 〇 實施例6 44.5 ◦ 1—Η LO LO LO 1..... H i 1 Ο 寸 CD* LO 产Η CO r—Η 〇〇 ◎ 〇 1實施例5| 44.5 | 〇) ι~Η LO LO LO r-H <=)· 寸 a CO (ΝΙ <d> f··碡 oo CO ◎ 〇 1實施例4| 44.5 | Ο 〇〇 <NI CNI l〇 1 \ ι—Η CD 寸 a CD CO 寸 CO co 1—Η 03 LO ◎ 〇 !實施例3| 44.5 ◦ i—Η CO LO r—Η 〇· 寸 c=> LO LO Cvl Cl? <>a LO I1·" H ◎ 〇 1實施例2| Γ44.5 I L〇 Csl LO LO 1—^ r· ·Η <zi 寸 〇> LO Ο cz> in CO ◎ 〇 1實施例1| LO 寸· CD LO r' K 1—^ <=> c6 CD c=> Γ·Ή ◦ CD 〇〇 LO 1 ◎ 〇 環氧樹脂1 環氧樹脂2 盼樹脂 丙烯酸系樹脂 苯氧樹脂 寡聚物1 寡聚物2 寡聚物3 寡聚物4 寡聚物5 還原酚酞 坐化合物 環氧矽烷 二氧化矽填充劑 熔融黏度atl50°C(Pa . s) 最低溶融黏度(Pa · s) Wa/Wb Na/Nb 離子遷移性 電氣式耦接可靠度 熱硬化性樹脂 成膜性樹脂 寡聚物化合物 助焊劑活性化合物 硬化促進劑 矽烷偶合劑 填充材 評估 6C 170卜寸寸1860 201031730 由表1中得知，實施例1至9的離子遷移性與電氣可靠度 均優異。相對於此，未使用寡聚物化合物的比較例1則電氣 可靠度差。 本申請案係以平成20年12月24日所提出申請的曰本專 利申請案特願2008-326771為基礎並主張優先權，且將其全 部的揭示融入於本案中。 【圖式簡單說明】 圖1(a)至（d)為半導體裝置之製造方法一例的示意剖視圖。 【主要元件符號說明】 1 半導體元件 2 黏著膜 3 基板 10 半導體裝置 11 焊錫凸塊 111 焊錫耦接部 098144704 402 hardening conditions are implemented. That is, the solder bonding is preferably carried out under the condition that the solder bump U is melted 'but the hardening reaction of the adhesive film 2 has not proceeded. Thereby, the shape of the solder coupling portion when the solder is coupled can be formed into a stable shape excellent in coupling reliability. Next, the adhesive film 2 is heated and hardened. The conditions for hardening are not particularly limited, and are preferably 130 to 220. 〇 30~500 minutes, better 098144704 201031730 150~200°C x60~180 minutes. In this case, the semiconductor device 1 in which the semiconductor element 1 and the substrate 3 are adhered by the cured material of the adhesive film 2 can be obtained. Since the semiconductor device is adhered by the cured material of the hybrid film 2 as described above, the Wei-type surface contact reliability is excellent. Further, a multilayer circuit substrate can be obtained by bonding a circuit board and a circuit board with a cured material of an adhesive film in the same manner. 〇#, the same method ‘the semiconductor element and the semiconductor element are adhered by the cured material of the adhesive film to obtain a semiconductor component. Further, according to the same method, a semiconductor wafer provided with a solder layer and a semiconductor wafer provided with an electrode having a metal layer are adhered by a cured film of an adhesive film to obtain a semiconductor component; and a solder is provided. A semiconductor wafer of a layer and a semiconductor wafer provided with an electrode having a metal layer are adhered by a cured material of an adhesive film to obtain a semiconductor component. ❿ ’ Use a dicing blade to cut the semiconductor parts and slice the parts to obtain a semiconductor device. Further, in the present embodiment, the plurality of semiconductor components are integrally laminated, but the present invention is not limited thereto, and other main components may be stacked after the main semiconductor components are stacked. Hereinafter, other embodiments of the present invention will be described. (1) An adhesive film comprising: a film-forming resin containing a thermosetting resin, a film-forming property of a lift film, an oligomer compound having a lower molecular weight than the film-forming resin, and a resin of a flux active compound Composition of the composition. 098144704 27 201031730 (2) The adhesive film according to (1), wherein the weight average molecular weight of the polymer compound is 1,000 to 15,000. (3) The adhesive film according to (1) or (2), wherein the content of the above-mentioned seleganide compound is 1% to 3% of the total of the resin composition. (4) The adhesive composition according to any one of (1) to (3), wherein the oligomer compound has compatibility with the film-forming resin. (5) The adhesive film according to any one of (1) to (4), wherein the oligo compound is 15 (the TC melt viscosity of the adhesive film is 1 〇 to 1 〇 (9) pa.s. (6) The adhesive film according to any one of the above-mentioned resin composition, wherein the film-forming resin content Wa and the oligomer compound content Wb are The adhesive film according to any one of (1) to (6), wherein the weight average molecular weight of the film-forming resin is Na, The weight average molecular weight of the oligomer compound is Nb, and when Na/NbS1, 〇00, the content of the above-mentioned polymerizable compound in the entire resin composition wb is ❹1 to 30% by weight. The adhesive film according to any one of (1) to (7), wherein the film-forming resin contains an acrylic resin. (9) As described in any one of (1) to (8) The above-mentioned oligomer compound contains an acrylic oligomer. (10) A multilayer circuit board according to any one of the above (1) to (9). The hardened material of the film is bonded to the circuit board by the circuit board. 098144704 28 201031730 (11) A semiconductor component, which is a cured product of the adhesive film according to any one of the above (1) to (9), The semiconductor element is bonded to the semiconductor element. (12) A semiconductor device in which a semiconductor element and a substrate are adhered by using a cured product of the adhesive film as described in any one of the above (1) to (9). [Examples] Hereinafter, the present invention will be described in detail based on examples and comparative examples. However, the present invention is not limited thereto. (Example 1) <Modulation of Adhesive Film> Thermosetting Resin: Epoxy Resin (manufactured by Nippon Kayaku Co., Ltd., NC6000, weight average molecular weight: 600) 44.5 parts by weight and phenol resin (manufactured by SUMITOMO BAKELITE Co., Ltd., PR-53647, weight average molecular weight: 570), 10 parts by weight, film-forming resin: Methyl)acrylic resin [acrylic acid ester copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl methacrylate copolymer), Nagase ChemteX, SG-708-6, Tg: 6 ° C, weight average molecular weight: 800,000] 20 parts by weight, oligomer compound: styrene acrylic copolymer having a carboxyl group (oligomer 1, * manufactured by Toagosei Co., Ltd., UC-3900, weight average molecular weight: • 4,600) 10 parts by weight, flux active compound (hardener having flux activity): 15 parts by weight of reduced phenolphthalein (manufactured by Tokyo Chemical Industry Co., Ltd.), hardening accelerator: imidazole compound (made by Shikoku Kasei Co., Ltd., 2P4MZ) ) 0.1 098144704 29 201031730 Parts by weight, and Shi Xi siu coupling agent: 2-(3,4-epoxycyclohexyl)ethyltrimethoxy zexi (Epoxy Shiki, Shin-Etsu Chemical Co., Ltd., KBM-303) 0.4 parts by weight of 'dissolved in methyl ethyl ketone (MEK) to obtain a resin varnish. The obtained resin varnish was applied to a base polyester film (manufactured by TORAY Co., Ltd., Lumirror) in a thickness of 50 μm, and dried at 5 ° C for 5 minutes to obtain a flux having a thickness of 25 μm and having flux activity. membrane. <Manufacturing of Semiconductor Device> On a semiconductor element having a solder bump (dimensions: 1 mm×10 mm, thickness: 0.3 mm), the obtained adhesive film was laminated by a vacuum roll veneer press to obtain adhesion. A semiconductor component of a film. Then, while the pads of the circuit board having the pads were aligned with the solder bumps, the semiconductor elements were temporarily pressure-bonded to the circuit board at 100 ° C for 30 seconds. Next, 235 C was applied for 30 seconds to heat the solder bumps to perform solder coupling. q Then, the yoke is heated at 180 C for 60 minutes to harden the adhesive film, and a semiconductor device in which the semiconductor element and the circuit substrate are adhered by the cured film of the adhesive film is obtained. (Example 2) In the preparation of the resin varnish, the following compounds were used except for the oligomer compound, and the blending amount was as described below, and the others were as in Example 1. Using a thermosetting resin, epoxy resin (Nippon Chemical Co., Ltd. 098144704 30 201031730, NC6000, weight average molecular weight: 6 〇〇) 44 5 parts by weight, and phenol resin (produced by SUMITOMO BAKELITE Co., pr_53647, weight average) Molecular weight: 570) 10 parts by weight, film-forming resin: (meth)acrylic resin [acrylic acid ester-ethyl acrylate-butyl acrylate_acrylonitrile-acrylic acid-hydroxy methacrylate copolymerization Manufactured by Nagase ChemteX, SG-708-6, Tg: 6°C, weight average molecular weight: 8〇〇, 〇〇〇] 25 parts by weight, oligomer compound: styrene acrylic acid with epoxy propyl group Copolymer (polymer ❹ 2, manufactured by Toagosei Co., Ltd., ug-4040, weight average molecular weight: 11,000) 5 parts by weight, flux active compound (hardener with flux activity): reduced phenolphthalein (Tokyo Chemicals Co., Ltd.) 15 parts by weight, hardening accelerator: imidazole compound (manufactured by Shikoku Chemicals Co., Ltd., 2p4MZ) 〇 1 part by weight, and decane coupling agent: 2-(3,4-epoxycyclohexyl)ethyl Trimethoxy stone Xi Xuan > (epoxy > 5 Xi Xuan, Shin-Etsu Chemical Co., Ltd., kbm_3〇3) 〇.4 parts by weight. 〇 (Example 3) In the preparation of the resin varnish, the same as Example 1 except that the blending amount was set as described below. Use: thermosetting resin: epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC6000, weight average molecular weight: 600) 44.5 parts by weight, and phenol resin (manufactured by SUMITOMO BAKELITE Co., pr_53647, weight average molecular weight: 570) 10 weight Parts, film-forming resin: (meth)acrylic resin [acrylic acid S copolymer (acrylic acid acetonitrile - acrylic acid butyl vinegar - acrylonitrile - propyl acrylate - methyl 098144704 31 201031730 based acrylic acid copolymerization of ethyl ester Manufactured by Nagase ChemteX, SG-708-6, Tg: 6 ° C, weight average molecular weight: 800,000] 6 parts by weight, oligomer compound: styrene acrylic copolymer having carboxyl group (oligomer 1, East Asia) Synthetic Co., Ltd., UC-3900, weight average molecular weight: 4,600) 24 parts by weight, flux active compound (hardener having flux activity): 15 parts by weight of reduced phenolphthalein (manufactured by Tokyo Chemical Industry Co., Ltd.), hardening accelerator : Imidazole compound (manufactured by Shikoku Chemicals Co., Ltd., 2P4MZ) 0_1 parts by weight, and decane coupling agent: 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane (epoxy decane, Shin-Etsu Chemical Co., Ltd., KBM-303) 0.4 parts by weight. (Example 4) In the preparation of the resin varnish, the same as Example 1 except that the blending amount was as described below. Use: thermosetting resin: epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC6000, weight average molecular weight: 600), 44.5 parts by weight, and phenol resin (manufactured by SUMITOMO BAKELITE Co., Ltd., PR-53647, weight average molecular weight: 570) 10 parts by weight of an anthraquinone resin: (meth)acrylic resin [acrylate copolymer (ethyl acrylate-butyl acrylate-acrylonitrile-acrylic acid-methacrylic acid light ethylene glycol copolymer), manufactured by Nagase ChemteX Co., Ltd. SG-708-6, Tg: 6° C., weight average molecular weight: 800,000] 28 parts by weight, oligomer compound: styrene acrylic copolymer having a carboxyl group (polymerization 1, manufactured by Toagosei Co., Ltd., UC- 3900, weight average molecular weight: 098144704 32 201031730 4, _) 2 parts by weight, flux active compound (hardener with flux activity): reduced phenolphthalein (Tokyo Chemical Industry Co., Ltd. added weight, hardening accelerator: taste saliva Compound (4) Guohuacheng Co., Ltd., Chuan Chuanchuan] parts by weight, and Shixi burning coupling agent: 2-(3,4_epoxycyclohexyl)ethyltrimethoxywei (epoxy Wei, Xinling 4 parts by weight, kbm_3G3) 实施 4 parts by weight. (Example 5) © In the preparation of the resin varnish, except that the blending amount was as described below, the same as in Example 1. Use. Thermosetting tree | .j Oxygen Resin (manufactured by Dainippon Ink Chemical Co., Ltd., EHCLON-850, weight average molecular weight: 38 〇) 44 parts by weight, and phenol resin (manufactured by SUMITOMO BAKELITE Co., Ltd., pR_53647, average molecular weight i · 570) 10 Parts by weight: film-forming resin: phenoxy resin (manufactured by Tohto Kasei Co., Ltd., FX_293, weight average molecular weight: ❹45,000) 15 parts by weight, eupolymer compound: epoxy resin (oligomer 3, JER strand injury) Co., Ltd., Ep-1002, weight average molecular weight: 1200) parts by weight, flux active compound (hardener with flux activity): 15 parts by weight of reduced phenolphthalein (manufactured by Toka Chemical Industries, Ltd.), hardening accelerator: Imidazole compound (manufactured by Shikoku Chemicals Co., Ltd., 2p4MZ) 〇 3 parts by weight, and Shi Xi siu coupling agent: 2-(3,4-epoxycyclohexyl)ethyltrimethoxy decane (epoxy decane, Shin-Etsu Chemical Shares have Company, KBM 3〇3) 〇 4 parts by weight. (Example 6) 098144704 33 201031730 In the preparation of the resin varnish, except that the blending amount was set as described below, the same as in Example 1. Use: Thermosetting Resin: epoxy resin (manufactured by Dainippon Ink Co., Ltd., EPICLON-850, weight average molecular weight: 380) 44.5 parts by weight, and phenol resin (manufactured by SUMITOMO BAKELITE Co., Ltd., PR-53647, weight average molecular weight: 570) 10 weight A film-forming resin: phenoxy resin (manufactured by Tohto Kasei Co., Ltd., FX-293, weight average molecular weight: 45,000), 15 parts by weight, oligomer compound: epoxy resin (oligomer 4, JER Co., Ltd.) , Ep-1010, weight average molecular weight: 5,500) 15 parts by weight, flux active compound (hardener having flux activity): 15 parts by weight of reduced phenolphthalein (manufactured by Tokyo Chemical Industry Co., Ltd.), hardening accelerator: imidazole compound ( Siguohuacheng Co., Ltd., 2P4MZ) 0.1 parts by weight, and decane coupling agent: 2-(3,4-epoxycyclohexyl)ethyltrimethoxy decane (epoxy oxime, #越化学Parts Ltd., KBM-303) 0.4 parts by weight. (Example 7) In the preparation of the resin varnish, the same as Example 1 except that the blending amount was set as described below. Use: thermosetting resin: epoxy resin (manufactured by Dainippon Ink Co., Ltd., EPICLON-850, weight average molecular weight: 38 〇) 44 5 parts by weight, and phenol resin (manufactured by SUMITOMO BAKELITE Co., Ltd., PR-53647, weight) Average molecular weight: 570) 10 parts by weight, film-forming resin: phenoxy resin (manufactured by Tohto Kasei Co., Ltd., FX-293, weight average molecular weight: 098144704 34 201031730 45,000) 15 parts by weight, oligomer compound: phenol resin ( Oligomer 5, manufactured by SUMITOMO BAKELITE Co., Ltd., PR-51470, weight average molecular weight: 2,200) 15 parts by weight, flux active compound (hardener having flux-flux activity): reduced phenolphthalein (manufactured by Tokyo Chemical Industry Co., Ltd.) 15 parts by weight, hardening accelerator: 0.1 parts by weight of a sodium salicium compound (manufactured by Shikoku Chemicals Co., Ltd., 2P4MZ), and a decane coupling agent: 2-(3,4-epoxycyclohexyl)ethyltrioxane 0.4 parts by weight of decane (epoxy decane, Shin-Etsu Chemical Co., Ltd., ❹ KBM-303). (Example 8) In the preparation of the resin varnish, the same as Example 1 except that the blending amount was as described below. Use: thermosetting resin: epoxy resin (manufactured by Dainippon Ink Co., Ltd., EPICLON-850, weight average molecular weight··380) 40 parts by weight, and phenol resin (made by SUMITOMO BAKELITE Co., Ltd., pr-53647, ❹ weight) Average molecular weight: 570) 9 parts by weight, film-forming resin: styrene resin (manufactured by Tohto Kasei Co., Ltd., weight average molecular weight: 45, 〇〇〇) 13 5 severely injured, polymer compound: epoxy resin (oligomer) 4, JE Co., Ltd., Ep-1010, weight average molecular weight: 55 〇〇) 13 5 parts by weight, flux, flux active compound (hardener with flux activity): reduced phenolphthalein (manufactured by Tokyo Chemical Industry Co., Ltd.) 13.5 parts by weight, hardening accelerator: imidazole compound (manufactured by Shikoku Chemicals Co., Ltd., 2P4MZ) (U parts by weight, Shixia coupling agent: 2-(3,4-epoxycyclohexyl)ethyltrimethoxy-Wei (Epoxy Pour, Shin-Etsu Chemical 098144704 35 201031730 Co., Ltd., ΚΒΜ-303) 0.4 parts by weight, and a filler: 10 parts by weight of a dioxide filler (Admatech Co., Ltd., SE-l〇5〇-LC) (Example 9) In the preparation of the resin varnish, the amount of the formulation was the same as in Example 1. The use of the thermosetting resin: epoxy resin (manufactured by Dainippon Ink Chemical Co., Ltd.) , EPICLON-850, weight average molecular weight: 38 〇) 26 7 parts by weight, with phenol resin (produced by SUMITOMO BAKELITE Co., pr_53647, weight average molecular weight: 570) 6 parts by weight, film-forming resin: phenoxy resin (Dongdu Huacheng版-293, weight average molecular weight: 45 〇〇〇) 9 parts by weight, polymerized compound: epoxy resin (oligomer 4, manufactured by JER Co., Ltd., Ep-1010, weight average molecular weight : 5,5 〇〇) 9 parts by weight, flux active compound (hardener having flux activity): 9 parts by weight of reduced phenolphthalein (manufactured by Tokyo Chemical Industry Co., Ltd.), hardening accelerator: imidazole compound 0.1 parts by weight, 2P4MZ), decane coupling agent: 0.2 parts by weight of 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane (epoxynonane, Shin-Etsu Chemical Co., Ltd., KBM-303), And filling Titanium dioxide cermet filler (manufactured by Admatech Co., Ltd., SE l〇5〇LC) 4 parts by weight. (Comparative Example 1) In the preparation of the resin varnish, except that no oligomer compound was used, and the formulation was The following are the same as the following. 098144704 36 201031730 Use. Thermosetting resin: epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC6000, weight average molecular weight: 6 〇〇) 44 5 parts by weight And phenol resin (manufactured by SUMITOMO BAKELITE Co., Ltd., PR-53647, weight average component: 570) 10 parts by weight, film-forming resin: (mercapto) acrylic resin [acrylic acid ester copolymer (acrylic acid B) Ester-butyl acrylate_acrylonitrile_acrylic acid-mercaptopropionic acid via vinegar copolymer), Nagase ChemteX, SG_708-6, Tg: 6. (: weight average molecular weight: 8 〇〇, 〇〇〇] 30 parts by weight, ❹ flux active compound (hardener having flux activity): 15 parts by weight of reduced phenolphthalein (manufactured by Tokyo Chemical Industry Co., Ltd.), hardening accelerator : 0.1 part by weight of an imidazole compound (manufactured by Shikoku Chemicals Co., Ltd., 2P4MZ), and a decane coupling agent: 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane (epoxy decane, Shin-Etsu Chemical Co., Ltd.) Company, KBM-3〇3)〇4 parts by weight. For the semiconductor devices obtained according to the respective examples and comparative examples, the following evaluations were performed. The evaluation items and contents were exemplified. The obtained results are shown in the table. Ion Mobility For the semiconductor device obtained in each of the examples and the comparative examples, the insulation resistance value between adjacent bumps was continuously measured while applying a voltage of 5 V in an environment of 13 ° C and 85% RH, and ion migration was evaluated. Each symbol is such as ^ : ' ◎: The insulation resistance value after 500 hours is 〇E+〇6 or more. 〇: The insulation resistance value of 100~250 hours is reduced to 丨〇E+〇6 or less. △ : 24 hours~ Insulation resistance less than 100 hours The value is reduced to below 1 〇E+〇6. 098144704 37 201031730 X. 0~Insulation resistance value less than 24 hours is reduced to 1GE+〇2. Electrical transfer reliability. Semiconductor device obtained according to various examples and comparative examples Each of the two devices was operated at 55 C for 3 〇 minutes, at 125 t: for 3 〇 minutes, and the exposure was set to 1 犹 ring, and a temperature cycle test was performed for 1 〇〇 cycle, for the semiconductor device after the erroneous test. The digital meter measures the coupling resistance of the semiconductor component and the substrate, and evaluates the electrical coupling reliability. The symbols are as follows: 〇: The coupling resistance values of all 20 semiconductor devices are below 1 〇β. One or more semiconductor devices are coupled to a resistance value of 10 Ω or more. 3. Determination of melt viscosity The melt viscosity of the adhesive film is a viscoelasticity measuring device ("Rheo Stress RSl5") manufactured by ΗΑΑΚΕ ' 依 依 依 依 依 依 依 依 依 / / / / / / 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依The measurement was carried out under the conditions of a gap of mm5 mm, a frequency of 0.1 Hz, and a temperature increase rate of 10 ° C/min, and the values obtained by minimizing the melt viscosity and the melt viscosity were measured values. 098144704 38 201031730 [1^] 1Comparative Example 1 44.5 C3 LO 1 1 (=> o 〇> g Ο Write 1 1 ◎ X | Example 9 | 卜CO CM CO σΰ CJ5 τ—1 cz>C<1<=5·〇<〇Ο οο οα i-Η 〇0 ◎ 〇1Example 8 05 LO CO t-H LO CO LO CO rH 1—^ CD C5 〇T1· Ή LO CNI LO 1—Η 〇 0 ◎ 〇Example 7 44.5 〇LO LO LO 1 λ 1—^ CD 呀 CD οο ^-Η ◎ 〇 Example 6 44.5 ◦ 1—Η LO LO LO 1..... H i 1 Ο inch CD* LO Η Η CO r — Η 〇〇 ◎ 〇 1 Example 5| 44.5 | 〇) ι~Η LO LO LO rH <=)· inch a CO (ΝΙ <d> f··碡oo CO ◎ 〇1 Example 4| 44.5 | Ο 〇〇<NI CNI l〇1 \ ι—Η CD inch a CD CO inch CO co 1—Η 03 LO ◎ 〇! Example 3| 44.5 ◦ i—Η CO LO r—Η 〇·inch c=> LO LO Cvl Cl? <>a LO I1·" H ◎ 〇1 Example 2| Γ44.5 IL〇Csl LO LO 1—^ r· ·Η <zi 〇 > LO Ο cz> in CO ◎ 〇 1 Example 1| LO inch · CD LO r' K 1 ^ <=> c6 CD c=> Γ·Ή ◦ CD 〇〇LO 1 ◎ 〇Epoxy resin 1 Epoxy resin 2 Resin acrylic resin phenoxy resin oligomer 1 oligomer 2 oligomer 3 oligomer 4 oligomer 5 reduction phenolphthalein compound epoxy decane cerium oxide filler melt viscosity atl50 ° C (Pa. s) minimum melt viscosity (Pa · s) Wa / Wb Na / Nb ion mobility electrical Coupling reliability thermosetting resin film-forming resin oligomer compound flux active compound hardening accelerator decane coupling agent filler evaluation 6C 170 inch inch 1860 201031730 It is known from Table 1 that the ion migration of Examples 1 to 9 Excellent both in terms of electrical and electrical reliability. On the other hand, Comparative Example 1 in which no oligomer compound was used was inferior in electrical reliability. This application is based on the patent application No. 2008-326771 filed on Dec. 24, 2009, and claims priority, and incorporates all of its disclosure into this case. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1(a) to 1(d) are schematic cross-sectional views showing an example of a method of manufacturing a semiconductor device. [Main component symbol description] 1 Semiconductor component 2 Adhesive film 3 Substrate 10 Semiconductor device 11 Solder bump 111 Solder coupling portion 098144704 40

Claims (1)

201031730 七、申請專利範圍： 1.一種黏著膜，係含有： 重量平均分子量未滿1，〇00的熱硬化性樹脂； 成膜性樹脂； '具有小於上述成膜性樹脂之重量平均分子量，且具有大於 上述熱硬化性樹脂之重量平均分子量的寡聚物化合物；以及 助焊劑活性化合物。 ❹ 2.如申請專利範圍第1項之黏著膜，其中，上述寡聚物化 合物的重量平均分子量係1 000以上、15 000以下。 3. 如申請專利範圍第丨項之黏著膜，其中，上述寡聚物化 合物係含有從丙烯酸樹脂、環氧樹脂、酚樹脂所構成群組中 選擇之至少1種以上。 4. 如申請糊範圍第1項之姆膜，其巾，上述成膜性樹 脂係含有丙烯酸系樹脂或苯氧樹脂。 ❹5.如中請專利範圍第：！項之黏著膜，其中，上述成膜性樹 脂的重量平均分子量係2萬以上。 6. 如申請專利範㈣1項之黏著膜，其中，上述熱硬化性 樹脂係含有環氧樹脂及酚樹脂。 7. 如申㈣職’ 6項之黏著膜，其中，上述募聚物化 。物係八有與上述純樹脂或上述賴脂產生反應的基。 8. 如申凊專利範圍第6項之黏著膜，其中，上述成膜性樹 月曰係具有與上述％氧樹脂或上述盼樹脂產生反應的基。 098144704 201031730 9.如申請專職圍第〗^崎膜， 合物的合右嗇孫彳Jfc入女I· ' ^上'迷泰聚物化 口物的3有里係佔含有上迷熟硬化性樹脂、 脂、上述寡聚物化合物及上述助焊劑活性化合物的= 物整體之1重量％以上、30重量％以下。的㈣組成 1〇·如申請專利範圍第1項之黏。著膜，其中，上述成㈣ 樹脂的含有㈣佔含有上•硬錄_、上性 合物及上述助焊劑活性化合物的樹脂組成 物正體之10重！％以上、5G重量％以下。 u.如申請專利範圍第1項之黏著膜，其中，上述寡聚物 化合物係具有與上述成膜性樹脂的相溶性。 12.如申請專利範㈣丨項之黏著膜，其中，靴的炫融 黏度係10Pa · s以上、1〇〇〇Pa · s以下。 U.如申請專利範圍第1項之黏著膜，其中，最低熔融點 度係 O.lPa · s 以上、1〇,〇〇〇Pa · s 以下。 14.如申請專利範圍第1項之黏著膜’其中，含有上述熱 硬化性樹脂、上述成膜性樹脂、上述寡聚物化合物及上述助 焊劑活性化合物的樹脂組成物整體中，上述成膜性樹脂含有 里Wa與上述募聚物化合物含有量Wb的比(Wa/Wb)，係〇 2 以上、20以下。 15.如申請專利範圍第丨項之黏著膜，其中，將上述成犋 性树脂的重量平均分子量設為Na、將上述寡聚物化合物的 重量平均分子量設為Nb，當Na/Nbgl,〇〇〇時，含有上述熱 098144704 42 201031730 硬化!·生樹月曰述成膜性樹脂、上述寡聚物化合物及上 焊劑活性化合物的樹脂組成物整體中，上述寡聚物化合物的 上述含有量Wb係1重量％以上、3 0重量％以下。 &如申請專·圍第}項之黏著膜，其中，上述助焊劍 '活性化合物係還原酚酞(phenolphthalin)。 17.如申請專利範圍第丨項之黏著膜，其中，更進一步含 有填充材。 ❹ Μ.如申請專利範圍第Π項之黏著臈，其中，上述填充材 含有里係佔含有上述熱硬化性樹脂、上述成膜性樹脂、上述 募聚物化合物、上述助焊劑活性化合物及上述填充材的樹脂 組成物整體之0.1重量％以上、80重量％以下。 19. 如申請專利範圍第丨項之黏著膜，其中，表面設有焊 錫層的第1半導體零件、及主面設有具金屬層之電極的第2 半導體零件中， © 將上述第1半導體零件的上述表面與上述第2半導體零件 的上述主面接合之黏著層，係使用該黏著膜。 20. —種多層電路基板，係利用申請專利範圍第1至19項 中任一項之黏著膜的硬化物，將電路基板與電路基板施行黏 r 著。 ί ‘ 21·一種半導體用零件，係利用申請專利範圍第1至19項 中任一項之黏著膜的硬化物，將半導體元件與半導體元件施 行黏著。 098144704 43 201031730 22. —種半導體用零件，係利用申請專利範圍第1至19項 中任一項之黏著膜的硬化物，將設有焊錫層的半導體晶片、 與設有具金屬層之電極的半導體晶圓施行黏著.。 23. —種半導體用零件，係利用申請專利範圍第1至19項 中任一項之黏著膜的硬化物，將設有焊錫層的半導體晶圓、 與設有具金屬層之電極的半導體晶圓施行黏著。 24. —種半導體裝置，係利用申請專利範圍第1至19項中 任一項之黏著膜的硬化物，將半導體元件與基板施行黏著。 098144704 44201031730 VII. Patent application scope: 1. An adhesive film comprising: a thermosetting resin having a weight average molecular weight of less than 1, 〇00; a film-forming resin; 'having a weight average molecular weight smaller than the above-mentioned film-forming resin, and An oligomer compound having a weight average molecular weight greater than that of the above thermosetting resin; and a flux active compound. The adhesive film according to claim 1, wherein the oligomeric compound has a weight average molecular weight of 1,000 or more and 15,000 or less. 3. The adhesive film according to the above aspect of the invention, wherein the oligomer compound contains at least one selected from the group consisting of an acrylic resin, an epoxy resin, and a phenol resin. 4. For the application of the paste film of the first item of the paste range, the film-forming resin described above contains an acrylic resin or a phenoxy resin. ❹ 5. If you ask for the scope of patents:! The adhesive film of the above aspect, wherein the film-forming resin has a weight average molecular weight of 20,000 or more. 6. The adhesive film according to the first aspect of the invention, wherein the thermosetting resin contains an epoxy resin and a phenol resin. 7. For example, the application of the (four) position of the adhesive film of the six items, wherein the above-mentioned polymerization. The system has a group which reacts with the above pure resin or the above-mentioned lysate. 8. The adhesive film of claim 6, wherein the film-forming sulphate has a group which reacts with the above-mentioned % oxygen resin or the above-mentioned resin. 098144704 201031730 9. If you apply for a full-time 第 ^ 崎 膜 film, the compound of the right 啬 啬 彳 彳 Jfc into the female I · ' ^ on the fascinating masculine mouth of the 3 lining accounted for containing the fascinating resin The fat, the oligomer compound, and the flux active compound are contained in an amount of 1% by weight or more and 30% by weight or less based on the total amount of the compound. (4) Composition 1〇·If the application of patent scope 1 is sticky. The film is formed, wherein the content of the above-mentioned (4) resin is (4) 10% of the normal composition of the resin composition containing the upper hard disk _, the upper compound and the above-mentioned flux active compound! % or more and 5G% by weight or less. The adhesive film according to claim 1, wherein the oligomer compound has compatibility with the film-forming resin. 12. For example, the adhesive film of the patent application (4) is used, wherein the shoe has a viscous viscosity of 10 Pa·s or more and 1 〇〇〇Pa·s or less. U. The adhesive film of claim 1, wherein the minimum melting point is O.lPa · s or more, 1 〇, 〇〇〇Pa · s or less. 14. The adhesive film of the first aspect of the invention, wherein the film forming property is contained in the entire resin composition containing the thermosetting resin, the film-forming resin, the oligomer compound, and the flux active compound. The resin contains a ratio (Wa/Wb) of Wa in the above-mentioned polymerizable compound content to Wb, and is 〇2 or more and 20 or less. 15. The adhesive film according to the above aspect of the invention, wherein the weight average molecular weight of the above-mentioned bismuth resin is Na, and the weight average molecular weight of the oligo compound is Nb, when Na/Nbgl, 〇〇 In the case of ruthenium, the above-mentioned content Wb of the oligomer compound is contained in the entire resin composition containing the heat 098144704 42 201031730 hardened by the raw material of the film forming resin, the oligomer compound and the fluxing active compound. 1% by weight or more and 30% by weight or less. &As for the adhesive film of the application, the above-mentioned welding sword 'active compound is phenolphthalin. 17. The adhesive film of claim 3, further comprising a filler.黏 Μ 黏 黏 之 如 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈The resin composition of the material is 0.1% by weight or more and 80% by weight or less based on the whole. 19. The adhesive film according to claim 2, wherein the first semiconductor component having the solder layer on the surface thereof and the second semiconductor component having the electrode having the metal layer on the main surface, © the first semiconductor component The adhesive layer is used for the adhesive layer in which the surface is bonded to the main surface of the second semiconductor component. A multilayer circuit board in which a circuit board and a circuit board are adhered by using a cured product of the adhesive film according to any one of claims 1 to 19. ί 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 21 098144704 43 201031730 22. A semiconductor component using a cured film of an adhesive film according to any one of claims 1 to 19, a semiconductor wafer provided with a solder layer, and an electrode provided with a metal layer Semiconductor wafers are adhered. A semiconductor component, which is a cured product of an adhesive film according to any one of claims 1 to 19, wherein a semiconductor wafer provided with a solder layer and a semiconductor crystal provided with an electrode having a metal layer are used. The circle is glued. A semiconductor device in which a semiconductor device and a substrate are adhered by using a cured product of an adhesive film according to any one of claims 1 to 19. 098144704 44
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