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WO2010060417A1 - Module de diode électroluminescente et élément à diode électroluminescente - Google Patents

Module de diode électroluminescente et élément à diode électroluminescente Download PDF

Info

Publication number
WO2010060417A1
WO2010060417A1 PCT/DE2009/001668 DE2009001668W WO2010060417A1 WO 2010060417 A1 WO2010060417 A1 WO 2010060417A1 DE 2009001668 W DE2009001668 W DE 2009001668W WO 2010060417 A1 WO2010060417 A1 WO 2010060417A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
emitting diode
light
diode module
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2009/001668
Other languages
German (de)
English (en)
Inventor
Christoph Neureuther
Ales Markytan
Steffen Block
Thomas Bleicher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2010060417A1 publication Critical patent/WO2010060417A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0277—Bendability or stretchability details
    • H05K1/0278—Rigid circuit boards or rigid supports of circuit boards locally made bendable, e.g. by removal or replacement of material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S4/00—Lighting devices or systems using a string or strip of light sources
    • F21S4/20—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0286—Programmable, customizable or modifiable circuits
    • H05K1/0293—Individual printed conductors which are adapted for modification, e.g. fusable or breakable conductors, printed switches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
    • H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0286—Programmable, customizable or modifiable circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09054—Raised area or protrusion of metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09063—Holes or slots in insulating substrate not used for electrical connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/0909—Preformed cutting or breaking line
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/17—Post-manufacturing processes
    • H05K2203/175—Configurations of connections suitable for easy deletion, e.g. modifiable circuits or temporary conductors for electroplating; Processes for deleting connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
    • H05K2203/302—Bending a rigid substrate; Breaking rigid substrates by bending
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive

Definitions

  • a light-emitting diode module is specified.
  • a light-emitting diode component is specified.
  • An object to be solved is to provide a light-emitting diode module which has a low thermal resistance and which is versatile. Another to be solved
  • the object is to specify a light-emitting diode component which comprises at least parts of such a light-emitting diode module.
  • this comprises a carrier.
  • the carrier is preferably designed with a printed circuit board or consists of such.
  • a printed circuit board in particular comprises a base body which is formed with at least one dielectric material.
  • the carrier is in particular made in one piece.
  • the light-emitting diode module has this Segmentierfurchen.
  • the Segmentierfurchen are located on a carrier underside of the carrier.
  • material dilutions of the circuit board are formed, along which the carrier can be segmented or divided. They are the Segmentierfurchen generated for example by milling.
  • the segmentation grooves only extend so far into the carrier that at least one half of an original thickness of the carrier remains in the region of the segmentation grooves.
  • the Segmentierfurchen represent breaking points at which along the carrier can be separated into sections.
  • the support is not mechanically weakened by the segmentation grooves in such a way that in the course of normal operation or assembly of the light-emitting diode module an unintentional
  • the latter has at least one, in particular at least two, preferably a plurality of mounting regions which are delimited from one another by the segmentation grooves. Between two adjacent, adjacent mounting areas so there is at least one Segmentierfurche on the underside of the carrier. In other words, adjacent mounting regions are mechanically connected to one another via the region of the carrier in which the at least one segmentation groove is located, connected or else by means of which they can be separated from one another.
  • the light-emitting diode module comprises at least 5 mounting areas, preferably at least 15.
  • the mounting regions each have at least one thermal through-connection, which is produced in the carrier and which lies opposite from the carrier underside
  • Carrier top is enough.
  • the mounting areas on a plurality of thermal vias are, in one direction parallel to the carrier top, preferably completely surrounded by components of the carrier material.
  • the thermal via at least in places, a thermal conductivity in a direction perpendicular to the carrier top, which has a specific thermal
  • the at least one thermal via is at least partially filled with a metal and / or with a gas.
  • At least one heat-conducting layer is located on the carrier underside and on the carrier top side.
  • the heat conducting layers are in direct contact with the at least one thermal through-connection.
  • the heat-conducting layer is preferably formed with a material having a specific thermal conductivity which exceeds the specific thermal conductivity of the material of the carrier by at least a fifty-fold, in particular by at least a five-hundredfold.
  • At least one optoelectronic semiconductor component is applied to the heat-conducting layer on the carrier top side.
  • the semiconductor component may be a light-emitting diode or a brushless light-emitting diode chip - A -
  • the optoelectronic semiconductor component can be constructed, for example, as described in the document US 2004/0075100 A1, the disclosure content of which with respect to the semiconductor component described therein as well as the described manufacturing method hereby by
  • the semiconductor device is attached to the carrier top, for example, by soldering or gluing on the heat conducting layer.
  • the mounting regions each have at least two electrical conductor tracks.
  • the semiconductor device is electrically contacted.
  • the electrical conductor tracks of the mounting regions are respectively applied to the carrier top side.
  • the printed conductors are produced via a printing process or via vapor deposition or sputtering or electroplating.
  • At least one of the conductor tracks of the mounting regions is not in direct electrical contact with the heat-conducting layers. In other words, at least one of the conductor tracks is not short-circuited with the heat conducting layers.
  • the relevant conductor track may be in indirect electrical contact with the heat conducting layers, in particular via the semiconductor component or via a component for protection against electrostatic discharge.
  • the light-emitting diode module there are at least two mutually adjacent mounting areas electrically connected in series via one of the conductor tracks.
  • one of the conductor tracks on the carrier top side establishes an electrical connection between the adjacent mounting areas delimited from one another by the segmentation grooves.
  • the light-emitting diode module comprises a one-piece carrier designed with a printed circuit board. Furthermore, the light-emitting diode module has segmentation grooves on a carrier underside of the carrier, assembly areas being delimited from one another by the segmentation grooves.
  • the mounting areas each have at least one thermal through-contact produced in the carrier, which extends from the carrier top side to a carrier underside lying opposite to it. Furthermore, the mounting areas each include a heat conducting layer, depending on the carrier underside and on the carrier top side, wherein the at least one thermal via is in direct contact with the heat conducting layers.
  • Each of the mounting areas comprises at least one optoelectronic
  • the mounting areas each include at least two electrical tracks on the carrier top, over which the at least one semiconductor device is electrically contacted, wherein at least one of the tracks of each of the mounting areas is not in direct electrical contact with the heat conducting layers. At least two adjacent mounting regions of the light-emitting diode module are electrically in via one of the conductor tracks on the carrier top
  • Such a light-emitting diode module has a low thermal resistance, so that heat arising during operation of the semiconductor component or of the light-emitting diode module can be dissipated efficiently from the semiconductor component. Since the light-emitting diode module has a plurality of
  • the light emitting diode module can be used in a variety of applications without adjusting the design of the mounting areas.
  • the electrical connection between adjacent mounting regions takes place via the conductor tracks on the upper side of the carrier over break edges.
  • the breaklines here are lines that run on the top of the carrier and lie opposite the Segmentierfurchen on the carrier base. Along the breaklines can be made a division of the light emitting diode module. In particular, the breaklines do not constitute a groove or depression in the wearer's material. The breakage edges may be fictitious lines.
  • the mounting regions are arranged in a two-dimensional matrix.
  • the mounting areas are designed with a square or rectangular floor plan and arranged in rows and columns in an array.
  • the segmentation grooves intersect. In other words, those are in columns and rows in the two-dimensional matrix arranged mounting areas each bounded by running between the columns and between the lines Segmentierfurchen each other.
  • all mounting areas in a column and / or in one row of the two-dimensional matrix are connected in series electrically via the break edges via at least one conductor track on the carrier top side.
  • the carrier underside is free of electrical conductor tracks.
  • at least parts of electrical contact points which are set up to electrically connect the at least one mounting region may be located on the underside of the carrier.
  • the carrier underside with the segmentation grooves structured therein serves for the mechanical division of the light-emitting diode module and the carrier top side with the electrical conductor tracks mounted thereon for electrical purposes
  • none of the conductor tracks of the mounting regions is in direct electrical contact with the heat-conducting layers on the
  • the material is the
  • the tracks can but in are indirect electrical contact with the heat conducting layers, in particular via the semiconductor device or via a component for protection against electrostatic discharge.
  • the mounting regions each have a main region and at least one secondary region, in particular exactly one secondary region.
  • the main area and the at least one minor area are delimited from each other by at least one of the segmentation grooves.
  • the at least one optoelectronic semiconductor component is in this case mounted on the main area, the at least one secondary area has no optoelectronic semiconductor component.
  • the at least one secondary region and the main region each comprise at least one mounting device.
  • the mounting device may be formed by a recess, a bore and / or a mounting pin.
  • the mounting device is adapted to the
  • the mounting devices are configured to be able to fasten an optical element such as a reflector or a lens to the mounting area with them.
  • both the main area and the at least one secondary area on the upper side of the carrier each have at least one of the electrical contact points.
  • the electrical Contact points can be designed as solder pads or solder pads. It is also possible that the contact points for contacting by means of electrical terminals, such as by means of Wago terminals, are set up. In particular, in the case of contacting by means of terminals, the contact points may be located at least partially on the underside of the carrier. If no contacting via terminals is provided, then the contact points are preferably exclusively on the carrier top side.
  • the heat-conducting layers on the carrier top side of the mounting regions and the conductor tracks of the assembly regions are each in one plane.
  • the heat conducting layers and the conductor tracks of the mounting areas are applied directly to the material of the carrier in the same production step or structured out of a layer applied on the carrier top side in the same production step.
  • the, heat conducting layers and the conductor tracks in the context of manufacturing tolerances, same thicknesses, in a direction perpendicular to the carrier top.
  • heat conducting layers and conductor tracks can have different thicknesses.
  • the heat-conducting layers and the conductor tracks are manufactured with the same material.
  • the conductor tracks and the heat conducting layers consist of copper and / or tin and / or gold.
  • a thickness of the conductor tracks and of the heat-conducting layers, in a direction perpendicular to the Carrier top less than 100 ⁇ m, in particular less than 5 500 ⁇ m ..
  • one surface of the heat-conducting layer corresponds to the one
  • Carrier top side of the mounting areas at least twice, and a surface of the heat conducting layer on the carrier underside of the mounting areas at least four times a base of the semiconductor device or a surface of a thermal connection of the semiconductor device.
  • the heat conducting layers on the carrier underside and on the carrier upper side have a significantly larger area than the optoelectronic semiconductor component. In this way, an efficient derivation of heat arising during operation of the semiconductor device from the semiconductor device can be ensured.
  • the surfaces of the heat conducting layers in the context of manufacturing tolerances, are the same size.
  • the thermal contact layer is applied over the carrier underside of the mounting regions, in particular over the entire carrier underside.
  • the thermal contact layer preferably has a thickness of less than 200 ⁇ m, in particular less than 100 ⁇ m. Via the thermal contact layer is an efficient thermal contact between the light emitting diode module and an external, not belonging to the light emitting diode module body on which the light emitting diode module is attached, feasible.
  • the heat-contact layer is configured to cause unevenness to balance the vehicle underside.
  • Such bumps can reduce the contact area between the light-emitting diode module and the external body, which does not belong to the light-emitting diode module. Also, bumps can lead to the formation of air bubbles between the body and the light-emitting diode module.
  • the thermal contact layer is designed with a dielectric material.
  • a dielectric material it is possible, for example, to avoid short circuits between the external body, which does not belong to the light-emitting diode module, and the conductor tracks, for example via the heat conducting layers and the electrical plated-through holes.
  • the material of the thermal contact layer has a particularly specific thermal conductivity of at least 0.7 W / (m K), in particular of at least 1.5 W / (m K).
  • the heat-contact layer is designed as an adhesion-promoting layer.
  • the thermal contact layer is designed as a self-adhesive layer.
  • a thickness of the carrier in particular in a direction perpendicular to the carrier top, is at most 1 mm, preferably at most 0.8 mm, in particular at most 0.5 mm. By using a particularly thin carrier this also has only a low thermal resistance.
  • the carrier includes or consists of an epoxy and glass fibers.
  • the carrier is made of the material FR4. The carrier thus in particular free of a metallic component.
  • a thermal resistance between the optoelectronic semiconductor component and a mounting surface on the carrier underside is less than or equal to 10 K / W, in particular less than or equal to 6 K / W.
  • the mounting surface is in this case that surface over which the light-emitting diode module is in direct contact with an external body, which does not belong to the light-emitting diode module.
  • the mounting surface can be defined by the underside of the carrier, the heat-insulating layer on the
  • Carrier base or be formed by the thermal contact layer.
  • the mounting regions each comprise at least four optoelectronic components.
  • Such a comparatively high number of optoelectronic components leads to increased thermal loads on the mounting areas. These increased thermal loads can withstand the light emitting diode module, since this has a small thermal resistance.
  • an electrical power consumption of each mounting region is at least 2 W, in particular at least 4 W.
  • a width of the mounting areas is between 3 mm and 40 mm, in particular between 5 mm and 20 mm.
  • a length of the mounting areas is between 8 mm and 60 mm inclusive, in particular between 18 mm and 35 mm inclusive.
  • the dimensions are 5 x 20 mm 2 .
  • Such dimensions of the mounting areas allow a high optical power of the light emitting diode module or a high luminance, based on the surface of the mounting areas.
  • the proportion of the at least one thermal via on the surface of the carrier top is at most 15%, in particular at most 5%. Due to the at least one thermal through-connection, therefore, the surface available on the carrier top side, for example for printed conductors, is not greatly reduced.
  • the mounting areas each have at least five, in particular at least eight, preferably at least fifteen thermal vias.
  • the at least one mounting region has singulation tracks along at least one break edge. These separation traces can be due to a separation of a light-emitting diode module.
  • the singulation may, for example, be accomplished by breaking along the segmentation furrows.
  • the segmentation grooves have an opening angle which lies between 15 ° and 60 ° inclusive. In particular, the opening angle is approximately 30 °.
  • the heat-conducting layer on the carrier top side includes at least one thermal connection region.
  • the at least one thermal connection region is set up to mount at least one semiconductor component on it.
  • the at least one thermal connection region is free of thermal vias.
  • the thermal vias are arranged around the thermal connection region.
  • a light-emitting diode component which has at least one mounting region of a light-emitting diode module.
  • the light-emitting diode component is a luminaire which comprises a carrier body and electrical connection devices, one or more mounting areas of a light-emitting diode module being fastened to the carrier body, and the connection devices being set up in particular for connecting the light-emitting diode component to the 230 V AC network.
  • this comprises at least one mounting region.
  • the mounting area includes a one-piece carrier designed with a printed circuit board, and at least five thermal vias formed in the carrier, which are opposite from one another from a carrier base Carrier top range. Furthermore, the at least one mounting region has a heat-conducting layer depending on the carrier underside and on the carrier top side, wherein these are in direct contact with the thermal plated-through holes.
  • the at least one mounting region further includes at least one optoelectronic semiconductor device, which is mounted on the heat conducting layer on the carrier top.
  • the at least one mounting area further comprises at least two electrical conductor tracks on the carrier top side, over which the at least one
  • a thermal resistance of the at least one mounting region between the optoelectronic semiconductor component and a mounting surface on the underside of the carrier is less than or equal to 15 K / W.
  • this comprises a voltage converter which can be operated on the input side with 230 V or 115 V AC voltage.
  • the light-emitting diode component with the at least one mounting region can furthermore have one or more features, as indicated in connection with at least one embodiment of the light-emitting diode module.
  • Some application areas in which light-emitting diode modules and light-emitting diode components described here can be used are, for example, the backlighting of displays or display devices.
  • the light-emitting diode modules and light-emitting diode components described here can also be approximately in Lighting devices are used for projection purposes, in headlights or light emitters or in particular in general lighting.
  • FIG. 1 shows a schematic plan view (A) and a schematic sectional view (B) of an embodiment of a light-emitting diode module described here,
  • Figures 2 and 3 are schematic three-dimensional
  • Figure 4 is a schematic plan view of a
  • Figure 5 is a schematic plan view (A) and a schematic bottom view (B) of a
  • FIG. 1 shows an exemplary embodiment of a light-emitting diode module 10.
  • a top view can be seen in Figure IA, a sectional view taken along the line A-A 'is shown in Figure IB.
  • thermal vias 13 are made, ranging from the carrier top 41 to the carrier base 42.
  • the thermal conductivity is increased by the support 4 through.
  • the thermal vias 13 are in direct contact with thermal conduction layers 2, not shown in FIG. 1, which are applied to the carrier top 41 and to the carrier bottom 42. Via the heat conducting layers 2, a distribution of the heat arising during operation of the light emitting diode module 10 takes place in a direction parallel to the carrier top 41 and to the carrier bottom 42.
  • thermal contact layer 3 covers the entire carrier base 42nd and has a thickness d of about 100 microns. About the heat contact layer 3 unevenness of the carrier base 42 are compensated.
  • the mounting regions 6 or the light-emitting diode module 10 thus has a planar mounting surface 15, which is formed by a side of the heat contact layer 3 facing away from the carrier top 41.
  • the thermal contact layer 3 may be designed as an adhesion-promoting layer, for example as a self-adhesive layer.
  • the light-emitting diode module 10 is subdivided into mounting regions 6, which are arranged in the form of strips and are each delimited from one another via segmentation grooves 11.
  • the Segmentierfurchen 11 are generated for example by milling and penetrate the carrier base 42.
  • the Segmentierfurchen 11 are located on the carrier top 41st
  • the breaklines 9 themselves do not represent a taper of the carrier 4.
  • the breaklines 9 are fictitious lines along which the carrier top 41 is severed as in a division of the light emitting diode module 10 into different sections.
  • a width b of the mounting portions 6 is about 20 mm, a length 1 of the mounting portions 6 is approximately 35 mm.
  • the carrier 4 has a thickness d, in a direction perpendicular to the carrier top 41, of approximately 0, 8 mm.
  • An opening angle ⁇ of the segmentation grooves 11 is, for example, 30 °.
  • the Segmentierfurchen 11 extend at most to half of the support 4, in a direction perpendicular to the carrier top 41 and seen from this.
  • the segmentation grooves 11 do not weaken the carrier 4 in such a way that during operation of the light-emitting diode module 10 or during assembly of the light-emitting diode module 10 an unwanted breakage occurs or dicing along the Segmentierfurchen 11 and the breaklines 9 occurs.
  • the Segmentierfurchen 11 it is possible to disassemble the LED module 10 in sections that are adapted to the requirements of a specific application. A number of
  • Mounting areas 6 of the sections is thus adjustable by dividing along the Segmentierfurchen 11 and without changes to the configuration of the mounting portions 6.
  • the mounting areas 6 have electrical contact points 14, so that the mounting areas 6, as required, for example via soldering are electrically contacted.
  • the optoelectronic semiconductor component 7 is electrically connected via conductor tracks 8 to the contact points 14.
  • One of the conductor tracks 8 runs without interruption over the breakage edges 9, so that the optoelectronic semiconductor components 7 of the adjacent mounting areas 6 are electrically connected in series via this conductor track 8.
  • the mounting areas 6 have mounting devices 5a, 5b.
  • the mounting devices 5a which are designed, for example, as holes, the mounting areas 6 can be attached to a not shown, external body.
  • the mounting devices 5b which are also designed, for example, as bores, serve, for example, for fastening an optical element (not shown in FIG. 1) to the mounting regions 6.
  • FIG. 2 schematically shows a three-dimensional representation of a further exemplary embodiment of the light-emitting diode module 10.
  • the opto-electronic semiconductor components 7 are arranged on the carrier top side 41 of a row Mounting areas 6 are electrically connected in series via the electrical conductor tracks 8.
  • the light-emitting diode module 10 can be bent so that along the breaking edge 9b a
  • the mounting areas 6a form a first group, the mounting areas 6b a second group.
  • the buckling and thus separation of the groups from each other along the Segmentierfurche IIb can be done by hand or by machine.
  • the Segmentierfurchen IIa serve in this
  • Embodiment of the LED module 10 not to a separation along the breaking edges 9a.
  • the mechanical stability of the groups of mounting areas 6a, 6b is not impaired by the segmentation grooves IIa in such a way that during operation or during assembly of the
  • the mounting devices 5b are designed as bores which serve to receive pins 17.
  • a reflector 12 is mounted on the mounting portions 6. Via the reflector 12, alternatively or additionally also via a lens, the radiation properties of the optoelectronic semiconductor components 7 can be adjusted.
  • FIG. 4 shows a schematic plan view of an embodiment of a light-emitting diode component 1.
  • the light-emitting diode component 1 comprises precisely one single mounting region 6.
  • the mounting region 6 is on an external
  • the body 16 of the LED component 1 applied.
  • the body 16 is formed, for example, as a heat sink.
  • the light-emitting diode component 1 may also include a plurality of mounting regions 6.
  • the mounting region 6 is achieved along the breakaway edges 9a, 9b, for example, from a light-emitting diode module 10 according to FIG. 1 or according to FIG. Along the breaklines 9a, 9b, the assembly area 6 has singulation tracks.
  • the mounting portion 6 is mounted on the body 16.
  • a reflector 12 can be applied to the mounting region 6 via the mounting devices 5b, cf. FIG. 3.
  • the optoelectronic semiconductor component 7 is not shown in FIG. 4, so that the heat conducting layer 2 applied to the carrier top side 41 is completely visible.
  • the heat conduction layer 2 is in direct contact with sixteen thermal vias 13, which extend to the carrier base 42.
  • the electrical contact points 14a are formed as soldering points. Via the contact points 14b, 14c, a contacting of the mounting region 6, for example via Wago clamps allows.
  • FIG. 5 shows a plurality of the mounting regions 6 in columns and rows arranged two-dimensionally.
  • the carrier 4 is in this case formed with or from a FR4-benefit and spans all mounting areas 6 in one piece.
  • the carrier 4 is thus free of a metallic component, In particular, the carrier 4 is not a so-called metal core board.
  • Each of the mounting portions 6 has a main portion 61 and a minor portion 62.
  • On the main area 61 are the heat conducting layers 2 and the mounting devices 5a, 5b.
  • the side region 62 which is delimited from the main region 61 by the segmentation groove 9b, has the mounting device 5b and an electrical contact point 14b, via which an electrical contacting of the mounting region 6 via terminals is made possible.
  • all mounting areas 6 of the light-emitting diode module 10 are configured identically.
  • Each of the mounting areas 6 has a total of four contact points 14a, 14b, so that each individual mounting area 6 can be contacted via the solder pads 14a and / or via the terminal pads 14b.
  • the conductor tracks 8 and the contact points 14a, 14b are correspondingly designed so that a separation along each of the Segmentierfurchen 9a, 9c is possible without additional contact points would be needed.
  • the light-emitting diode module 10 in rows, along the Segmentierfurche IIa and the breaking edge 9b divided into columns.
  • a row of mounting areas 6 represents, for example, a component of a ceiling lighting.
  • the secondary region 62 can be separated from the main region 61 via the segmenting groove IIb or the breaking edge 9b, to the width b of the mounting regions 6, in a direction parallel to the breaking edge 9a, to a width b 'to zoom out.
  • the heat-conducting layer 2 a on the front side has a surface which corresponds at least to twice a base area of the optoelectronic semiconductor component 7.
  • the heat-conducting layer 2b on the underside 41 of the carrier is again at least twice as large as the heat-conducting layer 2a.
  • the heat conducting layers 2a, 2b are connected through the carrier 4 through sixteen thermal vias 13 per main region 61.
  • a single mounting area 6 may also comprise a plurality of in particular light emitting diodes, for example four optoelectronic semiconductor components 7.
  • FIG. 6B shows a top view
  • FIG. 6A shows a sectional view along the line B-B '.
  • the mounting portion 6 is thermally connected to the body 16 via the thermal contact layer 3 made of a dielectric material having a high thermal conductivity.
  • the thermal contact layer 3 provides thermal contact between the body 16 and the heat insulating layer 2b located on the lower side 42 of the carrier.
  • the heat conducting layer 2a is thermally connected to the carrier top 41 with the heat conducting layer 2b on the carrier base 42.
  • the total of eight thermal vias 13 of the mounting region 6 are realized by bores with a diameter D of approximately 0.8 mm.
  • the inner surfaces of the holes are coated with copper with a thickness of about 35 microns, so the copper is in particular at least 10% of the volume of the holes.
  • the remaining volume of the holes is filled with air, for example.
  • the thermal vias 13 are formed not only by a coating of the holes, for example with copper, but by a complete filling of the holes with about copper or tin. This filling takes place, for example, galvanic or about impressing a plug.
  • the heat conducting layers 2a, 2b likewise consist of copper or tin and also have a thickness of approximately 35 .mu.m.
  • the materials of the heat conducting layers 2a, 2b and the material of the plated-through holes 13 are in direct contact with each other.
  • the mounted on the support top 41 electrical lines 8 are in the same plane as the heat conducting layer 2a.
  • the heat conducting layer 2 a is not in direct electrical contact with the lines 8.
  • An electrical connection between the heat conducting layer 2 a and the electrical lines 8 can be provided via the optoelectronic component 7.
  • the electrical lines 8 are also made of copper and have a thickness of approximately 35 .mu.m, in a direction perpendicular to the carrier top 41.
  • a width of the tracks 8, in a direction parallel to the carrier top 41, is approximately 300 microns.
  • FIG. 7 shows a further exemplary embodiment of the light-emitting diode component 1.
  • FIG. 7A shows a sectional view along the line AA 1 according to the plan view in FIG. 7B.
  • Exactly a mounting portion 6 of a light emitting diode module 10 is mounted on the body 16.
  • the optoelectronic semiconductor component 7 is applied to the heat-conducting layer 2a on the carrier top side 41 of the carrier 4.
  • the optoelectronic semiconductor component 7 has a thermal connection body 75, which is designed with a metal and on its side facing away from the carrier 4 an optoelectronic semiconductor chip 71 is mounted.
  • the thermal connection body 75 By means of the thermal connection body 75, the optoelectronic semiconductor chip 71 is thermally coupled to the heat conducting layer 2a. It is possible that the thermal connection body 75 is soldered or glued to the heat conducting layer 2a.
  • the thermal connection body 75 and electrical connection strips 73a, 73b are partially cast in a main body 72 of the semiconductor component 7.
  • a side of the thermal connection body 75 facing the support 4 remains free of a material of the base body 72.
  • the base body 72 forms a recess 16, into which the connection strips 73a, 73b project in part and which are generated with respect to that in the semiconductor chip 71 Radiation transparent material can be filled.
  • the recess 76 extends in the direction of the carrier 4, up to the thermal connection body 75 zoom.
  • connection strips 73a, 73b An electrical contacting of the semiconductor chip 71 via the connection strips 73a, 73b.
  • these connection strips 73a, 73b are in electrical contact with the electrical conductor tracks 8a, 8b and, on the other hand, via bonding wires 74a, 74b with the semiconductor chip 71.
  • the bonding wire 74b contacts a side of the semiconductor chip 71 facing away from the carrier 4.
  • the connection strips 73a, 73b may have a smaller width within the recess 76 than outside. An attachment of the connection strips 73a, 73b to the conductor tracks 8a, 8b takes place for example via soldering.
  • thermal connection region 18 The region in which the heat-conducting layer 2a on the carrier top side 41 is in contact with the thermal connection body 75 of the optoelectronic semiconductor component 7 represents a thermal connection region 18.
  • this thermal connection region 18 is enclosed by a dashed-dotted line.
  • the thermal connection region 18 is free of the thermal vias 13.
  • the entire, the support 4 facing surface of the thermal connection body 75 is in contact with the material of the heat conducting layer 2a. This prevents that, especially in the case with partially filled with air thermal vias 13, particularly hot spots on the carrier 4 side facing the thermal connection body 75 result.
  • the thermal vias 13 are partly in a region which is covered by the main body 72 of the semiconductor device 7 in the direction perpendicular to the carrier top 41.
  • Singling tracks 19 are found on boundary surfaces of the carrier 4 and the printed conductors 8a, 8b in a direction parallel to the carrier top 41 in particular between the Segmentierfurchen 11 and the breaklines 9. These singulation tracks 19 come from a separation of the mounting portions 6 of the light emitting diode module 10, for example a break on the Segmentierfurchen 11 is done.
  • Light emitting diode component 1 also comprise two or more mounting areas 6.
  • the mounting areas 6 are two or more mounting areas 6.
  • Light emitting diode component 1 is designed as a lamp and, for example, has a voltage converter, the input side with 230 V or 115 V AC voltage is operable and provides a voltage on the output side, which is suitable for operating the at least one optoelectronic semiconductor component 7.
  • connection strip 73a for example, to be in direct electrical contact with the thermal connection body 75, so that no bonding wire 74a is required.
  • the thermal connection body 75 can also be electrically insulated from the connection strips 73a, 73b and / or an electrical contacting of the semiconductor chip 71 can take place exclusively via its side facing away from the carrier 4.
  • a uncaused semiconductor chip 71 may be applied directly to the heat conducting layer 2a.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un module de diode électroluminescente (10) comportant un support (4) monobloc doté d'une carte à circuit imprimé, des rainures de segmentation (11) ménagées sur une face inférieure (42) du support (4) et une pluralité de zones de montage (6) mutuellement délimitées par les rainures de segmentation (11). Les zones de montage (6) comportent au moins un trou métallisé thermique (13) façonné dans le support (4) et allant de la face inférieure (42) du support à une face supérieure (41) opposée du support, une couche de conduction thermique (2) respectivement sur la face inférieure (42) et sur la face supérieure (41) du support, le ou les trous métallisés thermiques (13) étant en contact direct avec les couches de conduction thermique (2), au moins un élément semiconducteur optoélectronique (7) monté sur la couche de conduction thermique (2) de la face supérieure (41) du support, et au moins deux pistes conductrices (8) électriques disposées sur la face supérieure (41) du support et servant au contact électrique du ou des éléments semiconducteurs (7), au moins une des pistes conductrices (8) n'étant pas en contact électrique direct avec les couches de conduction thermique (2), de sorte qu'au moins deux zones de montage (6) voisines sont électriquement couplées en série par une des pistes conductrices (8).
PCT/DE2009/001668 2008-11-28 2009-11-23 Module de diode électroluminescente et élément à diode électroluminescente Ceased WO2010060417A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008059552.7 2008-11-28
DE102008059552A DE102008059552A1 (de) 2008-11-28 2008-11-28 Leuchtdiodenmodul und Leuchtdiodenbauteil

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WO2010060417A1 true WO2010060417A1 (fr) 2010-06-03

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US20140016298A1 (en) * 2012-07-16 2014-01-16 The Sloan Company, Inc. Dba Sloanled Flexible ribbon led module
US9410665B2 (en) 2012-07-16 2016-08-09 The Sloan Company, Inc. Flexible ribbon LED module
EP3043383A1 (fr) * 2015-01-06 2016-07-13 Daniel Muessli Bande lumineuse à DEL et procédé de fabrication de la bande lumineuse à DEL

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GB2335075A (en) * 1998-03-02 1999-09-08 Ericsson Telefon Ab L M Heat transfer from a single electronic device
WO2000055925A1 (fr) * 1999-03-17 2000-09-21 Koninklijke Philips Electronics N.V. Element optoelectronique
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US20180235082A1 (en) * 2017-02-16 2018-08-16 Ford Global Technologies, Llc Bending method for printed circuit board
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