WO2010060417A1 - Light diode module and light diode component - Google Patents

Abstract

Light diode module (10) with a unitary support (4) provided with a circuit board, segmenting grooves (11) on a support underside (42) of said support (4) and a number of assembly regions (6) separated from each other by the segmenting grooves (11), wherein the assembly regions (6) comprise: at least one thermal through contact (13) generated in the support (4), extending from the support underside (42) to an opposing support upper side (41), a heat conducting layer (2) on each of the support underside (42) and the support upper side (41), wherein the at least one thermal through contact (13) is in direct contact with the thermal conducting layers (2), at least one optoelectronic semiconductor component (7), applied to the thermal conducting layer (2) on the support upper side (41) and at least two electric conductor tracks (8) on the support upper side (41), by means of which the at least one semiconductor component (7) is electrically contacted, wherein at least one of the conductor tracks (8) is not in direct electrical contact with the thermal conducting layers (2) such that at least two adjacent assembly regions (6) are electrically connected in series by means of the conductor tracks (8).

Description

Light-emitting diode module and light-emitting diode component

A light-emitting diode module is specified. In addition, a light-emitting diode component is specified.

The publication US 2007/0291503 A1 discloses a light-emitting diode arrangement for a high-performance light-emitting diode and a method for producing such a light-emitting diode arrangement.

An object to be solved is to provide a light-emitting diode module which has a low thermal resistance and which is versatile. Another to be solved

The object is to specify a light-emitting diode component which comprises at least parts of such a light-emitting diode module.

According to at least one embodiment of the light-emitting diode module, this comprises a carrier. The carrier is preferably designed with a printed circuit board or consists of such.

A printed circuit board in particular comprises a base body which is formed with at least one dielectric material.

On the main body electrical conductors can be applied or structured. The carrier is in particular made in one piece.

According to at least one embodiment of the light-emitting diode module has this Segmentierfurchen. The Segmentierfurchen are located on a carrier underside of the carrier. By Segmentierfurchen material dilutions of the circuit board are formed, along which the carrier can be segmented or divided. They are the Segmentierfurchen generated for example by milling. By way of example, the segmentation grooves only extend so far into the carrier that at least one half of an original thickness of the carrier remains in the region of the segmentation grooves. In other words, the Segmentierfurchen represent breaking points at which along the carrier can be separated into sections. On the other hand, the support is not mechanically weakened by the segmentation grooves in such a way that in the course of normal operation or assembly of the light-emitting diode module an unintentional

Fragmentation of the carrier takes place along the Segmentierfurchen.

In accordance with at least one embodiment of the light-emitting diode module, the latter has at least one, in particular at least two, preferably a plurality of mounting regions which are delimited from one another by the segmentation grooves. Between two adjacent, adjacent mounting areas so there is at least one Segmentierfurche on the underside of the carrier. In other words, adjacent mounting regions are mechanically connected to one another via the region of the carrier in which the at least one segmentation groove is located, connected or else by means of which they can be separated from one another. In particular, the light-emitting diode module comprises at least 5 mounting areas, preferably at least 15.

In accordance with at least one embodiment of the light-emitting diode module, the mounting regions each have at least one thermal through-connection, which is produced in the carrier and which lies opposite from the carrier underside

Carrier top is enough. Preferably, the mounting areas on a plurality of thermal vias. The thermal vias are, in one direction parallel to the carrier top, preferably completely surrounded by components of the carrier material. Furthermore, the thermal via, at least in places, a thermal conductivity in a direction perpendicular to the carrier top, which has a specific thermal

Conductivity of the material of the carrier by at least a tenfold, in particular by at least a hundredfold exceeds. The at least one thermal via, for example, is at least partially filled with a metal and / or with a gas.

In accordance with at least one embodiment of the light-emitting diode module, at least one heat-conducting layer is located on the carrier underside and on the carrier top side. The heat conducting layers are in direct contact with the at least one thermal through-connection. For example, the heat conducting layers and the at least one thermal via touch each other. The heat-conducting layer is preferably formed with a material having a specific thermal conductivity which exceeds the specific thermal conductivity of the material of the carrier by at least a fifty-fold, in particular by at least a five-hundredfold. By the Wärmeleitschicht thus a layer is formed, which has a high thermal conductivity in the lateral direction, ie in a direction parallel to a Hauptausdehnungsrichtung the carrier base and the carrier top, in comparison to the carrier.

In accordance with at least one embodiment of the light-emitting diode module, at least one optoelectronic semiconductor component is applied to the heat-conducting layer on the carrier top side. The semiconductor component may be a light-emitting diode or a brushless light-emitting diode chip - A -

act. The optoelectronic semiconductor component can be constructed, for example, as described in the document US 2004/0075100 A1, the disclosure content of which with respect to the semiconductor component described therein as well as the described manufacturing method hereby by

Back cover is included. The semiconductor device is attached to the carrier top, for example, by soldering or gluing on the heat conducting layer.

In accordance with at least one embodiment of the light-emitting diode module, the mounting regions each have at least two electrical conductor tracks. About the electrical conductors, the semiconductor device is electrically contacted.

In accordance with at least one embodiment of the light-emitting diode module, the electrical conductor tracks of the mounting regions are respectively applied to the carrier top side. By way of example, the printed conductors are produced via a printing process or via vapor deposition or sputtering or electroplating.

In accordance with at least one embodiment of the light-emitting diode module, at least one of the conductor tracks of the mounting regions is not in direct electrical contact with the heat-conducting layers. In other words, at least one of the conductor tracks is not short-circuited with the heat conducting layers. The relevant conductor track may be in indirect electrical contact with the heat conducting layers, in particular via the semiconductor component or via a component for protection against electrostatic discharge.

In accordance with at least one embodiment of the light-emitting diode module, there are at least two mutually adjacent mounting areas electrically connected in series via one of the conductor tracks. In other words, one of the conductor tracks on the carrier top side establishes an electrical connection between the adjacent mounting areas delimited from one another by the segmentation grooves.

In at least one embodiment of the light-emitting diode module, this comprises a one-piece carrier designed with a printed circuit board. Furthermore, the light-emitting diode module has segmentation grooves on a carrier underside of the carrier, assembly areas being delimited from one another by the segmentation grooves. The mounting areas each have at least one thermal through-contact produced in the carrier, which extends from the carrier top side to a carrier underside lying opposite to it. Furthermore, the mounting areas each include a heat conducting layer, depending on the carrier underside and on the carrier top side, wherein the at least one thermal via is in direct contact with the heat conducting layers. Each of the mounting areas comprises at least one optoelectronic

Semiconductor component, which is applied to the heat conducting layer on the carrier top. The mounting areas each include at least two electrical tracks on the carrier top, over which the at least one semiconductor device is electrically contacted, wherein at least one of the tracks of each of the mounting areas is not in direct electrical contact with the heat conducting layers. At least two adjacent mounting regions of the light-emitting diode module are electrically in via one of the conductor tracks on the carrier top

Series switched. Such a light-emitting diode module has a low thermal resistance, so that heat arising during operation of the semiconductor component or of the light-emitting diode module can be dissipated efficiently from the semiconductor component. Since the light-emitting diode module has a plurality of

Has mounting areas, which can be separated from each other via the Segmentierfurchen groups with different numbers of mounting areas, the light emitting diode module can be used in a variety of applications without adjusting the design of the mounting areas.

In accordance with at least one embodiment of the light-emitting diode module, the electrical connection between adjacent mounting regions takes place via the conductor tracks on the upper side of the carrier over break edges. The breaklines here are lines that run on the top of the carrier and lie opposite the Segmentierfurchen on the carrier base. Along the breaklines can be made a division of the light emitting diode module. In particular, the breaklines do not constitute a groove or depression in the wearer's material. The breakage edges may be fictitious lines.

In accordance with at least one embodiment of the light-emitting diode module, the mounting regions are arranged in a two-dimensional matrix. For example, the mounting areas are designed with a square or rectangular floor plan and arranged in rows and columns in an array.

In accordance with at least one embodiment of the light-emitting diode module, the segmentation grooves intersect. In other words, those are in columns and rows in the two-dimensional matrix arranged mounting areas each bounded by running between the columns and between the lines Segmentierfurchen each other.

In accordance with at least one embodiment of the light-emitting diode module, all mounting areas in a column and / or in one row of the two-dimensional matrix are connected in series electrically via the break edges via at least one conductor track on the carrier top side.

In accordance with at least one embodiment of the light-emitting diode module, the carrier underside is free of electrical conductor tracks. However, at least parts of electrical contact points which are set up to electrically connect the at least one mounting region may be located on the underside of the carrier. In other words, the carrier underside with the segmentation grooves structured therein serves for the mechanical division of the light-emitting diode module and the carrier top side with the electrical conductor tracks mounted thereon for electrical purposes

Wiring of the light-emitting diode module.

According to at least one embodiment of the light-emitting diode module, none of the conductor tracks of the mounting regions is in direct electrical contact with the heat-conducting layers on the

Carrier top and at the vehicle base, still to the thermal vias. In other words, none of the conductor tracks with the heat conducting layers or the thermal vias is electrically shorted. Alternatively or additionally, the material is the

Conductors not in direct contact with a material of the heat conducting layers or the at least one thermal via. The tracks can but in are indirect electrical contact with the heat conducting layers, in particular via the semiconductor device or via a component for protection against electrostatic discharge.

In accordance with at least one embodiment of the light-emitting diode module, the mounting regions each have a main region and at least one secondary region, in particular exactly one secondary region. The main area and the at least one minor area are delimited from each other by at least one of the segmentation grooves. The at least one optoelectronic semiconductor component is in this case mounted on the main area, the at least one secondary area has no optoelectronic semiconductor component.

In accordance with at least one embodiment of the light-emitting diode module, the at least one secondary region and the main region each comprise at least one mounting device. The mounting device may be formed by a recess, a bore and / or a mounting pin. The mounting device is adapted to the

Light-emitting diode module and / or the mounting areas on an external, not belonging to the light emitting diode module body, for example, to attach to a heat sink.

In accordance with at least one embodiment of the light-emitting diode module, the mounting devices are configured to be able to fasten an optical element such as a reflector or a lens to the mounting area with them.

In accordance with at least one embodiment of the light-emitting diode module, both the main area and the at least one secondary area on the upper side of the carrier each have at least one of the electrical contact points. The electrical Contact points can be designed as solder pads or solder pads. It is also possible that the contact points for contacting by means of electrical terminals, such as by means of Wago terminals, are set up. In particular, in the case of contacting by means of terminals, the contact points may be located at least partially on the underside of the carrier. If no contacting via terminals is provided, then the contact points are preferably exclusively on the carrier top side.

In accordance with at least one embodiment of the light-emitting diode module, the heat-conducting layers on the carrier top side of the mounting regions and the conductor tracks of the assembly regions are each in one plane. For example, the heat conducting layers and the conductor tracks of the mounting areas are applied directly to the material of the carrier in the same production step or structured out of a layer applied on the carrier top side in the same production step. Preferably, the, heat conducting layers and the conductor tracks, in the context of manufacturing tolerances, same thicknesses, in a direction perpendicular to the carrier top. However, heat conducting layers and conductor tracks can have different thicknesses.

In accordance with at least one embodiment of the light-emitting diode module, the heat-conducting layers and the conductor tracks are manufactured with the same material. For example, the conductor tracks and the heat conducting layers consist of copper and / or tin and / or gold.

According to at least one embodiment of the light-emitting diode module, a thickness of the conductor tracks and of the heat-conducting layers, in a direction perpendicular to the Carrier top, less than 100 μm, in particular less than 5 500 μm ..

In accordance with at least one embodiment of the light-emitting diode module, one surface of the heat-conducting layer corresponds to the one

Carrier top side of the mounting areas at least twice, and a surface of the heat conducting layer on the carrier underside of the mounting areas at least four times a base of the semiconductor device or a surface of a thermal connection of the semiconductor device. In other words, the heat conducting layers on the carrier underside and on the carrier upper side have a significantly larger area than the optoelectronic semiconductor component. In this way, an efficient derivation of heat arising during operation of the semiconductor device from the semiconductor device can be ensured. But it is also possible that the surfaces of the heat conducting layers, in the context of manufacturing tolerances, are the same size.

In accordance with at least one embodiment of the light-emitting diode module, at least in places at least in places, in particular exactly one thermal contact layer is applied over the carrier underside of the mounting regions, in particular over the entire carrier underside. The thermal contact layer preferably has a thickness of less than 200 μm, in particular less than 100 μm. Via the thermal contact layer is an efficient thermal contact between the light emitting diode module and an external, not belonging to the light emitting diode module body on which the light emitting diode module is attached, feasible.

In accordance with at least one embodiment of the light-emitting diode module, the heat-contact layer is configured to cause unevenness to balance the vehicle underside. Such bumps can reduce the contact area between the light-emitting diode module and the external body, which does not belong to the light-emitting diode module. Also, bumps can lead to the formation of air bubbles between the body and the light-emitting diode module.

In accordance with at least one embodiment of the light-emitting diode module, the thermal contact layer is designed with a dielectric material. By using a dielectric material, it is possible, for example, to avoid short circuits between the external body, which does not belong to the light-emitting diode module, and the conductor tracks, for example via the heat conducting layers and the electrical plated-through holes.

In accordance with at least one embodiment of the light-emitting diode module, the material of the thermal contact layer has a particularly specific thermal conductivity of at least 0.7 W / (m K), in particular of at least 1.5 W / (m K).

In accordance with at least one embodiment of the light-emitting diode module, the heat-contact layer is designed as an adhesion-promoting layer. By way of the thermal contact layer, the light-emitting diode module can thus be fastened, at least temporarily, to the external body. For example, the thermal contact layer is designed as a self-adhesive layer.

In accordance with at least one embodiment of the light-emitting diode module, a thickness of the carrier, in particular in a direction perpendicular to the carrier top, is at most 1 mm, preferably at most 0.8 mm, in particular at most 0.5 mm. By using a particularly thin carrier this also has only a low thermal resistance. According to at least one embodiment of the light-emitting diode module, the carrier includes or consists of an epoxy and glass fibers. For example, the carrier is made of the material FR4. The carrier thus in particular free of a metallic component.

According to at least one embodiment of the light-emitting diode module, a thermal resistance between the optoelectronic semiconductor component and a mounting surface on the carrier underside is less than or equal to 10 K / W, in particular less than or equal to 6 K / W. The mounting surface is in this case that surface over which the light-emitting diode module is in direct contact with an external body, which does not belong to the light-emitting diode module. The mounting surface can be defined by the underside of the carrier, the heat-insulating layer on the

Carrier base or be formed by the thermal contact layer.

In accordance with at least one embodiment of the light-emitting diode module, the mounting regions each comprise at least four optoelectronic components. Such a comparatively high number of optoelectronic components leads to increased thermal loads on the mounting areas. These increased thermal loads can withstand the light emitting diode module, since this has a small thermal resistance.

In accordance with at least one embodiment of the light-emitting diode module, in the operation thereof an electrical power consumption of each mounting region is at least 2 W, in particular at least 4 W. According to at least one embodiment of the light-emitting diode module, a width of the mounting areas is between 3 mm and 40 mm, in particular between 5 mm and 20 mm. A length of the mounting areas is between 8 mm and 60 mm inclusive, in particular between 18 mm and 35 mm inclusive. For example, the dimensions are 5 x 20 mm ² . Such dimensions of the mounting areas allow a high optical power of the light emitting diode module or a high luminance, based on the surface of the mounting areas.

In accordance with at least one embodiment of the light-emitting diode module, the proportion of the at least one thermal via on the surface of the carrier top is at most 15%, in particular at most 5%. Due to the at least one thermal through-connection, therefore, the surface available on the carrier top side, for example for printed conductors, is not greatly reduced.

In accordance with at least one embodiment of the light-emitting diode module, the mounting areas each have at least five, in particular at least eight, preferably at least fifteen thermal vias.

In accordance with at least one embodiment of the light-emitting diode module, the at least one mounting region has singulation tracks along at least one break edge. These separation traces can be due to a separation of a light-emitting diode module. The singulation may, for example, be accomplished by breaking along the segmentation furrows. According to at least one embodiment of the light-emitting diode module, the segmentation grooves have an opening angle which lies between 15 ° and 60 ° inclusive. In particular, the opening angle is approximately 30 °.

In accordance with at least one embodiment of the light-emitting diode module, the heat-conducting layer on the carrier top side includes at least one thermal connection region. The at least one thermal connection region is set up to mount at least one semiconductor component on it.

In accordance with at least one embodiment of the light-emitting diode module, the at least one thermal connection region is free of thermal vias. For example, the thermal vias are arranged around the thermal connection region.

In addition, a light-emitting diode component is specified which has at least one mounting region of a light-emitting diode module. For example, the light-emitting diode component is a luminaire which comprises a carrier body and electrical connection devices, one or more mounting areas of a light-emitting diode module being fastened to the carrier body, and the connection devices being set up in particular for connecting the light-emitting diode component to the 230 V AC network.

In at least one embodiment of the light-emitting diode component, this comprises at least one mounting region. The mounting area includes a one-piece carrier designed with a printed circuit board, and at least five thermal vias formed in the carrier, which are opposite from one another from a carrier base Carrier top range. Furthermore, the at least one mounting region has a heat-conducting layer depending on the carrier underside and on the carrier top side, wherein these are in direct contact with the thermal plated-through holes. The at least one mounting region further includes at least one optoelectronic semiconductor device, which is mounted on the heat conducting layer on the carrier top. The at least one mounting area further comprises at least two electrical conductor tracks on the carrier top side, over which the at least one

Semiconductor component is electrically contacted, wherein at least one of the conductor tracks is not in direct electrical contact with the heat conducting layers. A thermal resistance of the at least one mounting region between the optoelectronic semiconductor component and a mounting surface on the underside of the carrier is less than or equal to 15 K / W.

According to at least one embodiment of the light-emitting diode component, this comprises a voltage converter which can be operated on the input side with 230 V or 115 V AC voltage.

The light-emitting diode component with the at least one mounting region can furthermore have one or more features, as indicated in connection with at least one embodiment of the light-emitting diode module.

Some application areas in which light-emitting diode modules and light-emitting diode components described here can be used are, for example, the backlighting of displays or display devices. In addition, the light-emitting diode modules and light-emitting diode components described here can also be approximately in Lighting devices are used for projection purposes, in headlights or light emitters or in particular in general lighting.

Hereinafter, a light-emitting diode module described here and a light-emitting diode component described here will be explained in more detail with reference to the drawings with reference to embodiments. The same reference numerals indicate the same elements in the individual figures. However, there are no scale references shown, but individual elements may be exaggerated to improve understanding.

Show it:

1 shows a schematic plan view (A) and a schematic sectional view (B) of an embodiment of a light-emitting diode module described here,

Figures 2 and 3 are schematic three-dimensional

Representations of further embodiments of light-emitting diode modules described here,

Figure 4 is a schematic plan view of a

Embodiment of a light-emitting diode component described here,

Figure 5 is a schematic plan view (A) and a schematic bottom view (B) of a

Embodiment of a light-emitting diode module described here, and Figures 6 and 7 are schematic sectional views (A) and schematic plan views (B) of embodiments of light-emitting diode components described herein.

FIG. 1 shows an exemplary embodiment of a light-emitting diode module 10. A top view can be seen in Figure IA, a sectional view taken along the line A-A 'is shown in Figure IB.

In a carrier 4 with a carrier top 41 and a carrier base 42 thermal vias 13 are made, ranging from the carrier top 41 to the carrier base 42. About the thermal vias 13, the thermal conductivity is increased by the support 4 through. The thermal vias 13 are in direct contact with thermal conduction layers 2, not shown in FIG. 1, which are applied to the carrier top 41 and to the carrier bottom 42. Via the heat conducting layers 2, a distribution of the heat arising during operation of the light emitting diode module 10 takes place in a direction parallel to the carrier top 41 and to the carrier bottom 42.

On the support top 41 electrical lines 8 are mounted, which serve for electrical contacting of an optoelectronic semiconductor device 7. The semiconductor device 7 is also mounted on the carrier top 41. It is located, via the not shown in Figure 1 heat conduction layers 2 on the carrier top 41 and the thermal vias 13, in thermal contact with a thermal contact layer 3. The heat contact layer 3 covers the entire carrier base 42nd and has a thickness d of about 100 microns. About the heat contact layer 3 unevenness of the carrier base 42 are compensated. The mounting regions 6 or the light-emitting diode module 10 thus has a planar mounting surface 15, which is formed by a side of the heat contact layer 3 facing away from the carrier top 41. Optionally, the thermal contact layer 3 may be designed as an adhesion-promoting layer, for example as a self-adhesive layer.

The light-emitting diode module 10 is subdivided into mounting regions 6, which are arranged in the form of strips and are each delimited from one another via segmentation grooves 11. The Segmentierfurchen 11 are generated for example by milling and penetrate the carrier base 42. The Segmentierfurchen 11 are located on the carrier top 41st

Breaklines 9 opposite. The breaklines 9 themselves do not represent a taper of the carrier 4. The breaklines 9 are fictitious lines along which the carrier top 41 is severed as in a division of the light emitting diode module 10 into different sections.

A width b of the mounting portions 6 is about 20 mm, a length 1 of the mounting portions 6 is approximately 35 mm. The carrier 4 has a thickness d, in a direction perpendicular to the carrier top 41, of approximately 0, 8 mm.

An opening angle α of the segmentation grooves 11 is, for example, 30 °. The Segmentierfurchen 11 extend at most to half of the support 4, in a direction perpendicular to the carrier top 41 and seen from this. Thus, the segmentation grooves 11 do not weaken the carrier 4 in such a way that during operation of the light-emitting diode module 10 or during assembly of the light-emitting diode module 10 an unwanted breakage occurs or dicing along the Segmentierfurchen 11 and the breaklines 9 occurs. About the Segmentierfurchen 11, it is possible to disassemble the LED module 10 in sections that are adapted to the requirements of a specific application. A number of

Mounting areas 6 of the sections is thus adjustable by dividing along the Segmentierfurchen 11 and without changes to the configuration of the mounting portions 6.

The mounting areas 6 have electrical contact points 14, so that the mounting areas 6, as required, for example via soldering are electrically contacted. The optoelectronic semiconductor component 7 is electrically connected via conductor tracks 8 to the contact points 14. One of the conductor tracks 8 runs without interruption over the breakage edges 9, so that the optoelectronic semiconductor components 7 of the adjacent mounting areas 6 are electrically connected in series via this conductor track 8.

Furthermore, the mounting areas 6 have mounting devices 5a, 5b. About the mounting devices 5a, which are designed, for example, as holes, the mounting areas 6 can be attached to a not shown, external body. The mounting devices 5b, which are also designed, for example, as bores, serve, for example, for fastening an optical element (not shown in FIG. 1) to the mounting regions 6.

FIG. 2 schematically shows a three-dimensional representation of a further exemplary embodiment of the light-emitting diode module 10. The opto-electronic semiconductor components 7 are arranged on the carrier top side 41 of a row Mounting areas 6 are electrically connected in series via the electrical conductor tracks 8.

At the Segmentierfurche IIb, the light-emitting diode module 10 can be bent so that along the breaking edge 9b a

Distribution takes place. The mounting areas 6a form a first group, the mounting areas 6b a second group. The buckling and thus separation of the groups from each other along the Segmentierfurche IIb can be done by hand or by machine. The Segmentierfurchen IIa serve in this

Embodiment of the LED module 10 not to a separation along the breaking edges 9a. The mechanical stability of the groups of mounting areas 6a, 6b is not impaired by the segmentation grooves IIa in such a way that during operation or during assembly of the

Light emitting diode modules 10 in the region of Segmentierfurchen IIa damage would occur.

In the embodiment of the light-emitting diode module 10 according to FIG. 3, the mounting devices 5b are designed as bores which serve to receive pins 17. About the pins a reflector 12 is mounted on the mounting portions 6. Via the reflector 12, alternatively or additionally also via a lens, the radiation properties of the optoelectronic semiconductor components 7 can be adjusted.

FIG. 4 shows a schematic plan view of an embodiment of a light-emitting diode component 1. The light-emitting diode component 1 comprises precisely one single mounting region 6. The mounting region 6 is on an external

Body 16 of the LED component 1 applied. The body 16 is formed, for example, as a heat sink. Unlike in 4, the light-emitting diode component 1 may also include a plurality of mounting regions 6.

The mounting region 6 is achieved along the breakaway edges 9a, 9b, for example, from a light-emitting diode module 10 according to FIG. 1 or according to FIG. Along the breaklines 9a, 9b, the assembly area 6 has singulation tracks. About the mounting devices 5a, the mounting portion 6 is mounted on the body 16. By way of example, a reflector 12 can be applied to the mounting region 6 via the mounting devices 5b, cf. FIG. 3.

The optoelectronic semiconductor component 7 is not shown in FIG. 4, so that the heat conducting layer 2 applied to the carrier top side 41 is completely visible. The heat conduction layer 2 is in direct contact with sixteen thermal vias 13, which extend to the carrier base 42.

The electrical contact points 14a are formed as soldering points. Via the contact points 14b, 14c, a contacting of the mounting region 6, for example via Wago clamps allows.

In the embodiment of the light-emitting diode module 10 according to

FIG. 5 shows a plurality of the mounting regions 6 in columns and rows arranged two-dimensionally. The carrier 4 is in this case formed with or from a FR4-benefit and spans all mounting areas 6 in one piece. Use, English panel, for example, refers to a large blank, from which one or more support 4 in particular shaping, such as punching, can be formed. The carrier 4 is thus free of a metallic component, In particular, the carrier 4 is not a so-called metal core board. Each of the mounting portions 6 has a main portion 61 and a minor portion 62. On the main area 61 are the heat conducting layers 2 and the mounting devices 5a, 5b. The side region 62, which is delimited from the main region 61 by the segmentation groove 9b, has the mounting device 5b and an electrical contact point 14b, via which an electrical contacting of the mounting region 6 via terminals is made possible.

As part of the manufacturing tolerances, all mounting areas 6 of the light-emitting diode module 10 are configured identically. Each of the mounting areas 6 has a total of four contact points 14a, 14b, so that each individual mounting area 6 can be contacted via the solder pads 14a and / or via the terminal pads 14b. The conductor tracks 8 and the contact points 14a, 14b are correspondingly designed so that a separation along each of the Segmentierfurchen 9a, 9c is possible without additional contact points would be needed.

Along the Segmentierfurche 11c and the breaklines 9c, the light-emitting diode module 10 in rows, along the Segmentierfurche IIa and the breaking edge 9b divided into columns. Such a row of mounting areas 6 represents, for example, a component of a ceiling lighting. By shortening the rows along a segmentation groove IIa or along a breaking edge 9a, the length of a row is also possible to the concrete requirements of an application without changing the design of the light-emitting diode module 10. If the electrical contact points 14b designed for clamping are not required, the secondary region 62 can be separated from the main region 61 via the segmenting groove IIb or the breaking edge 9b, to the width b of the mounting regions 6, in a direction parallel to the breaking edge 9a, to a width b 'to zoom out.

Via the electrical line 8, all mounting areas 6 of a row are electrically connected in series across the breaklines 9a. Thus, if a single line is interrupted by the remaining lines of the light-emitting diode module 10, a total of only two solder contacts, one at the beginning of the line and one at the end of the line, are required for this line of mounting areas 6. Unlike in FIG. 5, it is likewise possible that adjacent rows are electrically connected to one another via an S-shaped configuration of the conductor tracks 8, so that a continuous electrical series connection of all mounting areas 6 of the light-emitting diode module 10 can be realized.

The heat-conducting layer 2 a on the front side has a surface which corresponds at least to twice a base area of the optoelectronic semiconductor component 7. The heat-conducting layer 2b on the underside 41 of the carrier is again at least twice as large as the heat-conducting layer 2a. As a result, an efficient, large-area thermal contact via the mounting surface 15 on the support base 42 is ensured. The heat conducting layers 2a, 2b are connected through the carrier 4 through sixteen thermal vias 13 per main region 61.

Unlike in FIGS. 1 to 5, a single mounting area 6 may also comprise a plurality of in particular light emitting diodes, for example four optoelectronic semiconductor components 7.

Another embodiment of the light-emitting diode component 1 is shown in FIG. FIG. 6B shows a top view, FIG. 6A shows a sectional view along the line B-B '.

The mounting portion 6 is thermally connected to the body 16 via the thermal contact layer 3 made of a dielectric material having a high thermal conductivity. In particular, the thermal contact layer 3 provides thermal contact between the body 16 and the heat insulating layer 2b located on the lower side 42 of the carrier. The contact between the body 16 and the mounting portion 6 via the mounting surface 15, which is formed by the thermal contact layer 3. About the thermal vias 13, the heat conducting layer 2a is thermally connected to the carrier top 41 with the heat conducting layer 2b on the carrier base 42.

The total of eight thermal vias 13 of the mounting region 6 are realized by bores with a diameter D of approximately 0.8 mm. The inner surfaces of the holes are coated with copper with a thickness of about 35 microns, so the copper is in particular at least 10% of the volume of the holes. The remaining volume of the holes is filled with air, for example. Optionally, it is also possible that the thermal vias 13 are formed not only by a coating of the holes, for example with copper, but by a complete filling of the holes with about copper or tin. This filling takes place, for example, galvanic or about impressing a plug. The heat conducting layers 2a, 2b likewise consist of copper or tin and also have a thickness of approximately 35 .mu.m. The materials of the heat conducting layers 2a, 2b and the material of the plated-through holes 13 are in direct contact with each other.

The mounted on the support top 41 electrical lines 8 are in the same plane as the heat conducting layer 2a. The heat conducting layer 2 a is not in direct electrical contact with the lines 8. An electrical connection between the heat conducting layer 2 a and the electrical lines 8 can be provided via the optoelectronic component 7. The electrical lines 8 are also made of copper and have a thickness of approximately 35 .mu.m, in a direction perpendicular to the carrier top 41. A width of the tracks 8, in a direction parallel to the carrier top 41, is approximately 300 microns.

FIG. 7 shows a further exemplary embodiment of the light-emitting diode component 1. FIG. 7A shows a sectional view along the line AA ¹ according to the plan view in FIG. 7B.

Exactly a mounting portion 6 of a light emitting diode module 10 is mounted on the body 16. The optoelectronic semiconductor component 7 is applied to the heat-conducting layer 2a on the carrier top side 41 of the carrier 4.

The optoelectronic semiconductor component 7 has a thermal connection body 75, which is designed with a metal and on its side facing away from the carrier 4 an optoelectronic semiconductor chip 71 is mounted. By means of the thermal connection body 75, the optoelectronic semiconductor chip 71 is thermally coupled to the heat conducting layer 2a. It is possible that the thermal connection body 75 is soldered or glued to the heat conducting layer 2a.

The thermal connection body 75 and electrical connection strips 73a, 73b are partially cast in a main body 72 of the semiconductor component 7. In this case, a side of the thermal connection body 75 facing the support 4 remains free of a material of the base body 72. Furthermore, the base body 72 forms a recess 16, into which the connection strips 73a, 73b project in part and which are generated with respect to that in the semiconductor chip 71 Radiation transparent material can be filled. The recess 76 extends in the direction of the carrier 4, up to the thermal connection body 75 zoom.

An electrical contacting of the semiconductor chip 71 via the connection strips 73a, 73b. On the one hand, these connection strips 73a, 73b are in electrical contact with the electrical conductor tracks 8a, 8b and, on the other hand, via bonding wires 74a, 74b with the semiconductor chip 71. The bonding wire 74b contacts a side of the semiconductor chip 71 facing away from the carrier 4. An electrical contact via the bonding wire 74b via the particular metallic designed thermal connection body 75. The connection strips 73a, 73b may have a smaller width within the recess 76 than outside. An attachment of the connection strips 73a, 73b to the conductor tracks 8a, 8b takes place for example via soldering. The region in which the heat-conducting layer 2a on the carrier top side 41 is in contact with the thermal connection body 75 of the optoelectronic semiconductor component 7 represents a thermal connection region 18. In FIG. 7B, this thermal connection region 18 is enclosed by a dashed-dotted line. The thermal connection region 18 is free of the thermal vias 13. In other words, the entire, the support 4 facing surface of the thermal connection body 75 is in contact with the material of the heat conducting layer 2a. This prevents that, especially in the case with partially filled with air thermal vias 13, particularly hot spots on the carrier 4 side facing the thermal connection body 75 result. However, the thermal vias 13 are partly in a region which is covered by the main body 72 of the semiconductor device 7 in the direction perpendicular to the carrier top 41.

Singling tracks 19 are found on boundary surfaces of the carrier 4 and the printed conductors 8a, 8b in a direction parallel to the carrier top 41 in particular between the Segmentierfurchen 11 and the breaklines 9. These singulation tracks 19 come from a separation of the mounting portions 6 of the light emitting diode module 10, for example a break on the Segmentierfurchen 11 is done.

Unlike shown in Figure 7, the

Light emitting diode component 1 also comprise two or more mounting areas 6. Optionally it is possible that the

Light emitting diode component 1 is designed as a lamp and, for example, has a voltage converter, the input side with 230 V or 115 V AC voltage is operable and provides a voltage on the output side, which is suitable for operating the at least one optoelectronic semiconductor component 7.

As an alternative to the exemplary embodiment according to FIG. 7, it is likewise possible for the connection strip 73a, for example, to be in direct electrical contact with the thermal connection body 75, so that no bonding wire 74a is required. The thermal connection body 75 can also be electrically insulated from the connection strips 73a, 73b and / or an electrical contacting of the semiconductor chip 71 can take place exclusively via its side facing away from the carrier 4. Furthermore, a uncaused semiconductor chip 71 may be applied directly to the heat conducting layer 2a.

The invention described here is not limited by the description based on the embodiments. Rather, the invention encompasses every new feature as well as every new combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

This patent application claims the priority of German Patent Application 10 2008 059 552.7, the disclosure of which is hereby incorporated by reference.

Claims

claims 1. light-emitting diode module (10) with - a designed with a circuit board, single-piece carrier ^'(4) - Segmentierfurchen (11) on a carrier underside (42) of the carrier (4), and - At least one, in particular at least two or a plurality of mounting portions (6) which are delimited from each other by the Segmentierfurchen (11), wherein the mounting portions (6) have: - At least one in the carrier (4) generated thermal through-hole (13) from the underside of the carrier (42) to one of these opposite carrier top (41) ranges, a heat-conducting layer (2) depending on the carrier underside (42) and on the carrier top side (41), the at least one thermal through-connection (13) being in direct contact with the heat-conducting layers (2), - at least one optoelectronic semiconductor component (7), on the heat conducting layer (2) at the Carrier top (41) is mounted, and - at least two electrical conductor tracks (8) on the Carrier top side (41), via which the at least one semiconductor component (7) is electrically contacted, wherein at least one of the conductor tracks (8) is not in direct electrical contact with the heat conducting layers (2), wherein at least two adjacent mounting portions (6) via a the conductor tracks (8) are electrically connected in series. 2. light-emitting diode module (10) according to claim 1, wherein the conductor tracks (8) electrically connect the adjacent mounting areas (6) over break edges (9) on the carrier top side (41). 3. light-emitting diode module (10) according to any one of the preceding claims, wherein the mounting portions (6) are arranged in a two-dimensional matrix and the Segmentierfurchen (11) intersect. 4. Light-emitting diode module (10) according to one of the preceding claims, wherein the mounting areas (6) each have a main area (61) and at least one secondary area (62) ', which are delimited from each other by at least one of the Segmentierfurchen (2), wherein the at least one optoelectronic semiconductor component (7) is mounted on the main region (61), and in which the at least one secondary region (62) and the main region (62) each comprise at least one mounting device (5). 5. light-emitting diode module (10) according to the preceding claim, in which both the main region (61) and the at least one secondary region (62) on the carrier top side (21) each have at least one electrical contact point (14). 6. light-emitting diode module (10) according to one of the preceding claims, in which the heat conducting layers (2) on the carrier top side (41) and the conductor tracks (8) are in one plane. 7. Light-emitting diode module (10) according to one of the preceding claims, wherein one surface of the heat-conducting layer (2) on the carrier top side (41) of the mounting regions (6) at least twice, and an area of the heat-conducting layer (2) on the carrier underside (42). the mounting areas (6) corresponds to at least four times a base area of the at least one semiconductor device (7). 8. light-emitting diode module (10) according to any one of the preceding claims, wherein over the entire carrier underside (42) of the mounting areas (6) a heat contact layer (3) is applied, which is adapted to compensate for unevenness of the carrier base (42). 9. light-emitting diode module (10) according to the preceding claim, wherein the thermal contact layer (3) is designed with a dielectric material and has a thermal conductivity of at least 0.7 W / (m-K). 10. light-emitting diode module (10) according to claim 8 or according to the preceding claim, wherein the heat-contact layer (3) is designed as an adhesion-promoting layer. 11. Light emitting diode module (10) according to any one of the preceding claims, wherein the carrier (4) has a thickness (d), in a direction perpendicular to the carrier top (41), of at most 1 mm, and in which the carrier (4) a Epoxy and glass fibers included. 12. Light-emitting diode module (10) according to one of the preceding claims, wherein a thermal resistance between the optoelectronic semiconductor device (7) and a Mounting surface (15) on the support base (42) is less than or equal to 10 K / W. 13. Light-emitting diode module (10) according to one of the preceding claims,. in which the mounting regions (6) each comprise at least four optoelectronic components (7). 14. light-emitting diode component (1) with at least one mounting region (6) with a one-piece support (4) designed with a printed circuit board, at least five thermal vias (13) produced in the carrier (4), which extend from a carrier underside (42) to a carrier upper side (41) facing the latter, a heat-conducting layer (2) each at the carrier underside (42) and at the carrier top side ( 41), wherein the thermal vias (13) are in direct contact with the heat conducting layers (2), - At least one optoelectronic semiconductor device (7) on the heat conducting layer (2) on the Carrier top (41) is mounted, and - At least two electrical conductors (8) on the carrier top side (41) via which the at least one semiconductor device (7) is electrically contacted, wherein at least one of the conductor tracks (8) is not in direct electrical contact with the heat conducting layers (2), wherein a thermal resistance between the optoelectronic semiconductor device (7) and a mounting surface (15) on the carrier underside (42) is less than or equal to 15 K / W.