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WO2009146845A2 - Cellule solaire avec piège à lumière et module solaire - Google Patents

Cellule solaire avec piège à lumière et module solaire Download PDF

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Publication number
WO2009146845A2
WO2009146845A2 PCT/EP2009/003833 EP2009003833W WO2009146845A2 WO 2009146845 A2 WO2009146845 A2 WO 2009146845A2 EP 2009003833 W EP2009003833 W EP 2009003833W WO 2009146845 A2 WO2009146845 A2 WO 2009146845A2
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WO
WIPO (PCT)
Prior art keywords
light
solar cell
holographic element
cell according
holographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/003833
Other languages
German (de)
English (en)
Other versions
WO2009146845A3 (fr
Inventor
Karl-Heinz Stegemann
Steffen Krug
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NANOOPTICS GmbH
Signet Solar GmbH
Original Assignee
NANOOPTICS GmbH
Signet Solar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NANOOPTICS GmbH, Signet Solar GmbH filed Critical NANOOPTICS GmbH
Priority to EP09757228A priority Critical patent/EP2301082A2/fr
Publication of WO2009146845A2 publication Critical patent/WO2009146845A2/fr
Publication of WO2009146845A3 publication Critical patent/WO2009146845A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/32—Holograms used as optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/484—Refractive light-concentrating means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/04—Processes or apparatus for producing holograms
    • G03H1/0402—Recording geometries or arrangements
    • G03H1/0408—Total internal reflection [TIR] holograms, e.g. edge lit or substrate mode holograms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/26—Processes or apparatus specially adapted to produce multiple sub- holograms or to obtain images from them, e.g. multicolour technique
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/22—Processes or apparatus for obtaining an optical image from holograms
    • G03H1/2202—Reconstruction geometries or arrangements
    • G03H2001/2223—Particular relationship between light source, hologram and observer
    • G03H2001/2231—Reflection reconstruction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/22—Processes or apparatus for obtaining an optical image from holograms
    • G03H1/2202—Reconstruction geometries or arrangements
    • G03H2001/2223—Particular relationship between light source, hologram and observer
    • G03H2001/2234—Transmission reconstruction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H2222/00—Light sources or light beam properties
    • G03H2222/10—Spectral composition
    • G03H2222/16—Infra Red [IR]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H2260/00—Recording materials or recording processes
    • G03H2260/12—Photopolymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the application relates to a device for photovoltaic conversion, such as a solar cell or solar cells connected to a solar module, which have a light trap.
  • Optical losses are due, for example, to the fact that light incident on the solar cell is reflected or the light passes through the photovoltaically active layers and re-flows the solar cell without being absorbed. This light is lost for the photovoltaic conversion of light into electricity.
  • Light traps are used to generate electron-hole pairs in the absorber layer suitable light, for. B. light with a photon energy above the band gap of the absorber layer to absorb as completely as possible in the solar cell and thus to reduce optical losses.
  • light traps direct the light incident on a solar cell at appropriate angles so in the photovoltaic active layers, without collecting it and concentrate that the path length of light within the solar cell longer and the absorption probability higher is as in omitting the light traps.
  • light traps can be texturized to the light incidence side produce directed surface of the monocrystalline silicon.
  • An example of a textured surface are pyramidal structures that are formed utilizing a silicon etch rate dependent on the crystal direction. The texture of the surface causes less light to be reflected, and the light entering the cell is deflected such that, on average, it is path-extended.
  • Light-traps formed by texture for single-crystalline silicon solar cells typically have feature sizes that are substantially smaller than the layer thickness of the photovoltaically active layer.
  • the structure size of the texture would be in the region of the layer thickness of the photovoltaically active layer.
  • Texturing takes place here, for example, by texturing a glass surface or a transparent, conductive electrode layer.
  • Fig. IA shows a schematic simplification a
  • FIG. IB shows a schematic simplification a
  • Fig. 2A shows a schematic simplification of a
  • Fig. 2B shows a schematic simplification a
  • Fig. 2C shows a schematic simplification
  • 2D shows, in a schematic simplification, a cross section through a solar cell with a reflective holographic element on the rear side and the light deflection effected by the holographic element.
  • Fig. 3 shows a schematic simplification
  • FIG. 4 shows a schematic simplification
  • Fig. 5 shows a schematic simplification a
  • FIG. 6 shows a schematic representation of an exemplary transmission behavior of a holographic element at normal incidence of light as a function of a light deflection angle ⁇ .
  • FIG. 7A shows a schematic representation of an exemplary spectral transmission behavior of a first hologram layer of a holographic element in the case of normal incidence of light.
  • FIG. 7B shows a schematic representation of an exemplary spectral transmission behavior of a first hologram layer of the holographic element when light is incident at an angle ⁇ to the normal.
  • FIG. 7C shows a schematic representation of an exemplary spectral transmission behavior of a first hologram layer of the holographic element when light is incident at an angle ⁇ to the normal.
  • FIG. 7D shows a schematic representation of an exemplary spectral transmission behavior of a second hologram layer of the holographic element in the case of normal incidence of light.
  • Fig. 7E shows a schematic representation of an exemplary spectral transmission behavior of a second hologram layer of the holographic element at light incidence at an angle ⁇ to
  • 7F shows a schematic representation of an exemplary spectral transmission behavior of a second hologram position of the holographic
  • 7G shows a schematic representation of an exemplary spectral transmission behavior of a third hologram layer of the holographic element in the case of normal incidence of light.
  • 7H shows a schematic representation of an exemplary spectral transmission behavior of a third hologram layer of the holographic element when light is incident at an angle ⁇ to the normal.
  • 71 shows a schematic illustration of an exemplary spectral transmission behavior of a third hologram position of the holographic element when light is incident at an angle ⁇ to the normal.
  • FIG. 7J shows a schematic representation of an exemplary spectral transmission behavior of the holographic element with superimposed first, second and third hologram position under normal incidence of light.
  • Fig. IA shows in schematic simplification a cross section through a solar cell with a holographic element on the front side.
  • the solar cell 100 comprises a photovoltaic element 101 having a front side 102 formed as a light entry surface and a rear side 103 opposite thereto.
  • a holographic element 104 acting as a light trap is arranged, which transmits at least part of the incident light 105 and thus into the photovoltaic Element 101 deflects without concentrating it undergoes an optical path extension WV between front 102 and back 103.
  • the back surface 103 of the photovoltaic element 101 may be reflective, such as by providing a reflective metal layer on the back surface 103, e.g. made of silver (Ag).
  • the optical path extension WV results here as an optical path difference compared to the case in which the light 105 passes through the photovoltaic element 101 without light trap 104 from the front side 102 to the rear side 103.
  • the light 105 is incident perpendicularly on the front side 102 and is directed via the holographic element 104 at an angle ⁇ into the photovoltaic element 101.
  • Deflection is not limited to perpendicularly incident light, but may be achieved for an angular range, which in turn may depend on the thickness of the holographic planes in the holographic element 104. If the holographic planes in the holographic element 104 have a total thickness in the range of a few 10 ⁇ m, e.g. 30 ⁇ m to 50 ⁇ m such as 40 ⁇ m, a deflection in the angular range of several degrees, e.g. 1 ° to 4 ° can be achieved. If the thickness of the holographic planes in the holographic element 104 is less than 10 ⁇ m, then, for example, angular ranges of the deflection of about 5 ° to 20 ° or even 10 ° to 15 ° can be achieved.
  • the angular range can be further increased by stacking several hologram planes that are tuned to different wavelength ranges.
  • a changing angle of incidence of light e.g. a wandering position of the sun can be accommodated by causing a desired light deflection of different hologram layers in different light incident angle ranges.
  • Possible material systems for absorber layers of the photovoltaic element are chalcopyrites such as CuIn x Ga ( 1.x ) Se 2 (CIGS) and derivatives thereof, such as CIGSSe, III-V
  • Semiconductor materials such as GaAs, silicon in various crystal states such as monocrystalline silicon, amorphous silicon (a-Si or a-Si.H), multicrystalline silicon (mc-Si), microcrystalline silicon ( ⁇ c-Si), polycrystalline silicon (poly-Si), nanocrystalline silicon (nc-Si), CdTe, or organic semiconductors based on z.
  • a-Si or a-Si.H amorphous silicon
  • mc-Si multicrystalline silicon
  • ⁇ c-Si microcrystalline silicon
  • poly-Si polycrystalline silicon
  • nc-Si nanocrystalline silicon
  • CdTe organic semiconductors based on z.
  • organic semiconductors based on z.
  • the solar cell 100 may be on a single charge separating
  • Multi-junction solar cells Based transition, z. A pn junction or a pin junction, or on multiple charge-sharing junctions (Multi-junction solar cells). Examples of such multi-junction solar cells are tandem solar cells made of material systems such. As microcrystalline silicon / amorphous silicon or InGaP / GaAs, or triple junction solar cells such. B. a-Si: H / ⁇ c-Si: H / ⁇ c-Si: H, InGaP / GaAs / Ge or a-Si: H / aSiGe: H.
  • the holographic element 104 acting as a light trap merely redirects the incident light 105 without concentrating it.
  • the holographic element 104 differs from light concentrators in that it does not collect incident light and thus does not concentrate light incident on a first surface onto a surface of a photovoltaic layer that is smaller than the first surface.
  • the light deflection shown in FIG. 1A is a simplified illustration. So the diversion, d. H.
  • the angle ⁇ for example, be location-dependent or wavelength-dependent, with various techniques such as spectral multiplexing or spatial multiplexing may come into play.
  • spatial multiplexing can counteract optical losses caused, for example, by the fact that light deflected by the holographic element 104 exits the photovoltaic device 100 again after the reflection on the rear side 103 through the holographic element 104.
  • a reflective holographic element may be positioned on the back surface which reflects the light at a suitable angle to the front surface so that it does not exit through the holographic element 104.
  • an anti-reflection structure may be arranged between the holographic element 104 and a photovoltaically active structure within the photovoltaic element 101, for. B. pn absorber layers.
  • Such an anti-reflection structure reduces, for example, starting from the medium surrounding the solar cell 100, for. Air, Refractive index jumps in the transition of various media in the direction of the photovoltaically active layer. Reduced refractive index jumps reduce reflection losses and couple more light into the photovoltaic element 101.
  • the antireflection structure may for example consist of a single layer or of a layer stack. Layers of the antireflection structure have the highest possible transmissivity and are arranged approximately in such a way that the refractive indices increase in the direction of the photovoltaically active layer.
  • the antireflection structure may, for example, comprise or consist of at least one of the materials silicon oxynitride and silicon nitride.
  • the holographic element 104 may be incorporated in a conductive and translucent front-side electrode layer.
  • the front-side electrode layer derives the charge carriers separated in the photovoltaically active layers, ie the photovoltaically generated current, at the front side of the cell.
  • one or more hologram layers (n) for reflection of heat radiation in the infrared region may be formed (not shown).
  • the hologram layers may be the layers closest to the light incidence side.
  • the holographic element 104 can then be used as a light trap to increase the light absorption in the photovoltaically active layers of the photovoltaic element 101 and additionally as a heat shield against heating of the photovoltaic element 101 by infrared radiation.
  • Such a warming of the photovoltaic element 101 may lead to a decrease in the open-circuit voltage as well as to a slight increase in the short-circuit current and overall reduce the electric power provided by the solar cell.
  • the illustrated in Fig. IB solar cell 1 10 has a photovoltaic element 1 1 1 with a designed as a light entrance surface front side 1 12 and one of these opposite back 1 13.
  • a holographic element 1 14 is arranged, which acts as a light trap is tuned to the light absorption characteristic of the photovoltaic element 1 1 1 and at least a portion of the light transmitted through the photovoltaic element light 1 15 by reflection so deflects back into the photovoltaic element 1 1 1, without concentrating it, that it undergoes an optical path extension between the back of 1 13 and front 1 12.
  • the features and properties listed above for the photovoltaic element 101 and the holographic element 104 can be transferred in a corresponding manner to the solar cell 110 shown in FIG. 1B and to the embodiments shown in the further illustrations.
  • the angle ⁇ which characterizes the angle of reflection for light incident perpendicularly on the holographic element 14, can be selected, for example, such that this light is totally reflected at the front side 12 of the photovoltaic element 11, and thus again into the photovoltaic element 1 1 1 is deflected, whereby the light absorption within the photovoltaic element 1 1 1 is further increased.
  • the holographic element 1 14 may have a spatial multiplexing and thus have different diffraction vectors in different areas.
  • the holographic elements 104, 14 can be constructed such that the light is deflected on the entire light incident side.
  • the hologram layers are formed over the entire surface and the holographic element has, for example, no areas in which incident light having a wavelength whose absorption length in the absorber corresponds to a multiple of the thickness of the absorber is transmitted without being deflected.
  • the holographic element 104, 14 has at least one hologram layer.
  • the at least one hologram layer can be formed within a polymer layer, for example.
  • the at least one hologram layer can be formed approximately with the aid of UV laser irradiation, for. In chromate gelatin.
  • the polymer containing the at least one hologram layer can be a conductive polymer, so that the polymer, in addition to its function as a light trap, can also contribute to the transport of electricity, eg. In the form of a front side or rear side electrode of the photovoltaic element.
  • the polymer is formed as a polymer film or part thereof.
  • the polymer can be arranged on a transparent support, for. B. on a glass or a transparent plastic.
  • the at least one hologram layer of the holographic element is constructed, for example, to provide at least 80% of the incident light at an angle ⁇ for a wavelength in the visible part of the spectrum at which an absorption length within the photovoltaic element is greater than the thickness of the photovoltaic element > 50 °, wherein the angle ⁇ describes the deflection angle relative to a normal of the light incident surface.
  • the at least one hologram layer has, for example a sinoidal refractive index modulation and thereby differs from a conventional diffraction grating.
  • a deflection of the light in the holographic elements 104, 1 14 can be optimized, for example, to a wavelength range in which an optical absorption length within the photovoltaically active layer (s) (absorber layer (s)) of the photovoltaic elements 101, 1 1 1 is greater as the thickness of this layer (s).
  • the hologram layers can be spectrally optimized. In particular for wavelengths whose optical absorption length is greater than the thickness of the absorber layer (s), a deflection of the light by the holographic elements leads to an increase in the short-circuit current contribution attributable to this spectral range.
  • the photovoltaic elements 101, 1 1 1 can be, for example, multi-junction solar cells with a certain number of Ia- tion separating junctions, z.
  • Tandem cells with two charge-separating junctions or triple cells with three Ia- separating fusions, and a deflection of the light in the holographic element can be optimized for at least one of the number of corresponding number of wavelength ranges so that for each of these wavelength ranges one high light absorption takes place in a different cell of the multi-junction solar cell.
  • the holographic elements 104, 14 can be optimized for different wavelength ranges whose energy equivalents are in relation to the energy band gap of the various absorber layers of the multi-junction solar cell.
  • the spectral energy distribution of the solar spectrum may be, for. B. AM 1, 5 (Air Mass 1, 5).
  • the photovoltaic elements 101, 11 may, for example, comprise one or more thin-film solar cell (s), e.g. a-Si: H, a-Si: H / ⁇ c-Si: H or a-Si: H / ⁇ c-Si: H / / ⁇ c-Si: H solar cells.
  • s thin-film solar cell
  • a solar cell 201 is shown, in which on a transparent substrate 206, z.
  • a transparent front side electrode 207 is applied.
  • ITO In 2 O 3 ISNO 2
  • ZnO.Al, ZnOrB or SnO 2 F
  • F transparent conductive polymer
  • the absorber layer 208 electron-hole pairs are generated by light absorption, which are dissipated via the charge-separating transition of the absorber layer 208 to the front-side electrode 207 or to a rear-side electrode 209 positioned at the absorber layer 208 and opposite the front-side electrode.
  • the backside electrode 209 may be used as a backside reflector which reflects incident light back into the absorber layer 208.
  • the solar cell 201 may include other layers not shown in FIG. 2A, e.g. B. Passivi fürstiken to reduce the O- berfestrekombination of optically generated minority charge carriers or anti-reflection layers to reduce reflection losses of the incident light.
  • a holographic element 204 acting as a light trap is arranged on the side facing away from the front side electrode 207 of the transparent substrate 206.
  • the holographic For example, based on the light absorption characteristic and the thickness of the absorber layer (s) 208, element 204, at least part of the incident light 205, can be converted into the absorber layer (s) 208 without concentrating on an optical path extension between one optical path Front 202 of the absorber layer (s) 208 and a rear 203 of the absorber layer (s) 208 experiences.
  • the light deflections shown in Fig. 2A as well as in Figs. 2B-2D are shown only schematically.
  • the solar cell structure shown in FIG. 2A may, for example, be a solar cell with a single absorber layer 208 of amorphous silicon or a multi-junction solar cell with absorber layers of microcrystalline silicon and amorphous silicon.
  • FIG. 2B is a schematic cross-sectional view of a solar cell 221 having a holographic element 224 which also serves as a front-side electrode and is deposited on a transparent substrate 226.
  • a holographic element 224 On the holographic element 224 one or more photovoltaically active layers 228 are arranged opposite to the substrate 226.
  • An interface between the photovoltaic active layer 228 and the holographic element 224 defines a front side 222, ie the side from which the light penetrates into the photovoltaically active layers 228, ie the absorber layer (s) 228.
  • a rear side electrode 229 is arranged on a rear side 223 of the absorber layer 228, a rear side electrode 229 is arranged.
  • Incident light 225 is redirected to absorber layer 228 in holographic element 224, as discussed above, without being focused to undergo an optical path extension between front side 222 and back side 223.
  • the backside electrode 229 may be reflective.
  • the construction shown in FIG. 2B is suitable, for example, for solar cells made of amorphous silicon or else tandem solar cells made of amorphous and microcrystalline silicon.
  • FIG. 2C is a schematic cross-sectional view of a solar cell 241 having a reflective backside electrode 249 disposed on a carrier substrate 246. Since the light does not enter through the carrier substrate 246, it may be permeable or non-transmissive to light.
  • an absorber layer 248 is disposed opposite to the carrier substrate 246, and a front-side electrode 247 is disposed on the absorber layer 248 opposite to the backside electrode 249.
  • a holographic element 244 is arranged on the front side electrode 247, ie on a front side 242 of the absorber layer 248, .
  • the holographic element 244 redirects incident light 245 into the absorber layer 248, thereby increasing the light absorption and the photocurrent within the absorber layer 248.
  • the layer structure shown in FIG. 2C is suitable, for example, for solar cells in whose production process a backside electrode is first applied to a carrier substrate, as for example in solar cells such as a-Si: H on metal or polymer film or in solar cells with chalcopyrite absorber layers Case is, for. B. CIS solar cells and their derivatives.
  • FIG. 2D is a schematic cross-sectional view of a solar cell 261 with a translucent substrate 266 of e.g. As glass or transparent plastic on which a transparent front side electrode 267 is applied.
  • the front-side transparent electrode 267 may be, for example, a transparent conductive oxide or a transparent conductive polymer.
  • one or more absorber layers 268 are disposed on the front side electrode 267.
  • a holographic element 264 is arranged on the absorber layer 268, which also serves as a back-side electrode.
  • the holographic element 264 is thus disposed on a backside 263 of the absorber layer 268 and, unlike the holographic ones shown in FIGS. 2A-2C, causes Elements 204, 224, 244, a light deflection with simultaneous reflection.
  • the structure shown in FIG. 2D may be, for example, an amorphous silicon solar cell or else a tandem solar cell made of microcrystalline silicon and amorphous silicon.
  • FIG. 3 shows a reflective holographic element 300 having two hologram layers 301, 302 capable of reflecting and deflecting at least a portion of incident light 304 without concentrating it, the two hologram layers 301, 302 being embedded in a polymer 303.
  • FIG. 4 shows a schematic cross-sectional view of a holographic element 400.
  • the holographic element 400 causes a deflection during transmission.
  • the holographic element 400 has hologram layers 401, 402 which are embedded in an approximately transparent polymer 403.
  • each have two hoofogram positions 301, 302 and 401, 402 this is only to be regarded as an example and several hologram layers, but at least one, may be incorporated into the respective polymer 303 or 403.
  • An increase in the number of hologram layers, for example, allows optimization of the spectral dependence of the deflection.
  • FIG. 5 shows a schematic cross-sectional view of a solar module 500.
  • the solar module 500 has solar cells with a holographic element 504, a transparent substrate 506, a front-side electrode 507, an absorber layer 508, and an For backlit electrode 509.
  • material selection and light redirection of incident light 505 reference is made to the explanations of the respective layers 204, 206, 207, 208 and 209 of the example shown in FIG. 2A.
  • the front-side electrode 507, the absorber layer 508 and the rear-side electrode 509 are structured in such a way that a first cell associated with the absorber layer 508a is connected in series with a second cell associated with the absorber layer 508b.
  • the series connection is made by connecting the rear side contact 509 of the absorber layer 508a with the front side contact of the absorber layer 508b.
  • the cells may also be encapsulated to protect them from environmental influences (not shown).
  • FIG. 6 shows a schematic representation of an exemplary transmission behavior of a transmissive holographic element 604 as a function of a light deflection angle ⁇ .
  • the transmission behavior is shown for a wavelength to which the deflection has been optimized.
  • Vertical incident light 605 is passed undistracted to a small extent of less than 20%, eg, less than 10%, such as about 3%.
  • the majority of the incident light 605, that is, more than 80%, eg more than 90% such as 97%, is deflected by a predetermined angle ⁇ 0th
  • the holographic element 604 in contrast to conventional gratings, does not have any intensity contributions attributable to higher orders, to which further deflection angles are assigned.
  • FIG. 7A shows a schematic representation of an exemplary spectral transmission behavior of a first hologram layer H 0 of a holographic element.
  • the exemplary spectral transmission behavior shown as a diagram is based on a measuring arrangement simplified as sketched above the diagram.
  • Light 705 falls perpendicular to the hologram H 0 of the holographic element.
  • a detector D which is positioned on the side opposite to the light incident side, measures the intensity component of the light 705 that has been passed undistracted.
  • the deflection of the light 705 by the predetermined angle ⁇ 0 is set by way of example for the hologram position H 0 to a wavelength ⁇ 0 of 600 nm.
  • the intensity component of undirected light 705 measured by the detector D is therefore minimal at ⁇ 0 .
  • the intensity measured at the detector D increases, ie the transmission of the hologram layer increases and in the ideal case increases to 100%. Losses such as reflection or parasitic absorption can cause maximum transmission values that are less than 100%, eg between 80% and 100% or between 90% and 100%.
  • FIGS. 7B to 7C described below serve to explain the spectral transmission behavior of the first hologram layer H 0 when the light incidence angle changes. Since these figures and the following FIGS. 7D to 7J are constructed to form further hologram layers such as FIG. 7A, only essential differences from FIG. 7A are discussed below.
  • FIG. 7B shows a schematic representation of the spectral transmission behavior of the first hologram layer H 0 when the light incidence from vertical (see FIG. 7A) changes to an angle ⁇ to the normal.
  • the angle ⁇ is for example 10%.
  • the change of the light incidence angle leads to a change of the light deflection angle at which the transmission at the detector D becomes minimal.
  • a change in the angle of incidence of light from 0 ° to the normal (see FIG. 7A) on ⁇ leads to a change in the light deflection angle from ⁇ 0 to ⁇ 1 , accompanied by a change in the maximum deflection of the light.
  • ordered wavelength of ⁇ o 6OOnm (see Fig. 7A) to example
  • FIGS. 7D to 7F are schematic representations for spectral transmission characteristics of a second hologram layer H 1 for vertical incidence of light (FIG. 7D), light incident at an angle ⁇ relative to the normal (see. Fig. 7E) and light ⁇ at an angle to the normal (cf. Fig. 7F).
  • FIGS. 7G to 71 show schematic representations of the spectral transmission behavior of a third hologram position H 2 for vertical incidence of light (FIG. 7G), incidence of light at an angle ⁇ to the normal (see FIG. 7H) and incidence of light at an angle ⁇ to the normal (cf. Fig. 71).
  • the spectral transmission behavior of the holographic element with superimposed hologram layers H 0 , H 1 and H 2 with vertically incident light 705 is shown schematically in FIG. 7J.
  • a light deflection is achieved in an exemplary spectral range of 600 to 800 nm.
  • the spectral transmission behavior of a holographic element is shown in FIG. 7J by way of example with three superimposed hologram layers H 0 , H 1 and H 2 which optimally deflect perpendicularly incident light with wavelengths of 600 nm, 700 nm and 800 nm
  • the holographic element can of course be one of have three different numbers of hologram layers whose deflection can be set to predetermined wavelengths. The number and design of the hologram layers can be matched to a light deflection in a desired spectral range, for example.
  • the holographic element may be a reflective holographic element.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Un mode de réalisation de l'invention concerne une cellule solaire (100) avec piège à lumière (104). La cellule solaire (100) présente un élément photovoltaïque (101) avec une face avant (102) et une face arrière opposée (103). L'élément holographique (104) est agencé sur la face avant de l'élément photovoltaïque (101), laisse passer au moins une partie de la lumière incidente (105) et la dévie dans l'élément photovoltaïque (101), sans la concentrer, de sorte que le chemin optique entre la face avant (102) et la face arrière (103) soit prolongé.
PCT/EP2009/003833 2008-06-05 2009-05-28 Cellule solaire avec piège à lumière et module solaire Ceased WO2009146845A2 (fr)

Priority Applications (1)

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EP09757228A EP2301082A2 (fr) 2008-06-05 2009-05-28 Cellule solaire avec piège à lumière et module solaire

Applications Claiming Priority (2)

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DE102008026760A DE102008026760A1 (de) 2008-06-05 2008-06-05 Solarzelle mit Lichtfalle und Solarmodul
DE102008026760.0 2008-06-05

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WO2009146845A2 true WO2009146845A2 (fr) 2009-12-10
WO2009146845A3 WO2009146845A3 (fr) 2010-04-22

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DE202012102146U1 (de) 2012-06-12 2012-07-20 Vision Optics Gmbh Konzentrator-Solarmodul
DE102013206864A1 (de) * 2013-04-16 2014-10-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Reduzierung des Strahlungsaustausches von photovoltaischen Modulen
ES2527969B1 (es) * 2013-08-01 2015-11-23 Instituto Holográfico Andaluz, S.L. Panel solar tridimensional térmico o fotovoltaico con holografía incorporada

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JP2000294818A (ja) * 1999-04-05 2000-10-20 Sony Corp 薄膜半導体素子およびその製造方法
US6957650B2 (en) * 2002-02-15 2005-10-25 Biosynergetics, Inc. Electromagnetic radiation collector and transport system
AU2003282956A1 (en) * 2002-10-22 2004-05-13 Sunray Technologies, Inc. Diffractive structures for the redirection and concentration of optical radiation
DE102004015177B4 (de) * 2004-03-27 2006-05-18 Forschungszentrum Karlsruhe Gmbh Verfahren zur Strukturierung eines Elements, das ein reflektierendes Substrat und eine Antireflexschicht umfasst
DE102004031784A1 (de) * 2004-07-01 2006-02-16 GLB Gesellschaft für Licht- und Bautechnik mbH Verfahren zur Herstellung einer holografischen Ablenkvorrichtung
JP2009502027A (ja) * 2005-07-15 2009-01-22 コナルカ テクノロジーズ インコーポレイテッド 回折用フォイル
DE102007023583A1 (de) * 2007-05-21 2008-11-27 Solartec Ag Photovoltaik-Vorrichtung mit optischen Elementen zum Umlenken einfallender Sonnenstrahlen in einem gegebenen Spektralbereich auf an den optischen Elementen seitlich angebrachte Solarzellen

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EP2301082A2 (fr) 2011-03-30
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