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WO2009019574A8 - Photoresist composition for deep uv and process thereof - Google Patents

Photoresist composition for deep uv and process thereof Download PDF

Info

Publication number
WO2009019574A8
WO2009019574A8 PCT/IB2008/002063 IB2008002063W WO2009019574A8 WO 2009019574 A8 WO2009019574 A8 WO 2009019574A8 IB 2008002063 W IB2008002063 W IB 2008002063W WO 2009019574 A8 WO2009019574 A8 WO 2009019574A8
Authority
WO
WIPO (PCT)
Prior art keywords
polymer
photoresist composition
deep
photoresist
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2008/002063
Other languages
French (fr)
Other versions
WO2009019574A1 (en
Inventor
Munirathna Padmanaban
Srinivasan Chakrapani
Guanyang Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Publication of WO2009019574A1 publication Critical patent/WO2009019574A1/en
Publication of WO2009019574A8 publication Critical patent/WO2009019574A8/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

The present invention refers to a photoresist composition comprising (i) a polymer A comprising at least one acid labile group; (ii) at least one photoacid generator; (iii) at least one base; (iv) a polymer B, where polymer B is non- miscible with polymer A and soluble in the coating solvent, and; (v) a coating solvent composition. The present invention also relates to the process of imaging the photoresist.
PCT/IB2008/002063 2007-08-06 2008-07-30 Photoresist composition for deep uv and process thereof Ceased WO2009019574A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/834,490 2007-08-06
US11/834,490 US20090042148A1 (en) 2007-08-06 2007-08-06 Photoresist Composition for Deep UV and Process Thereof

Publications (2)

Publication Number Publication Date
WO2009019574A1 WO2009019574A1 (en) 2009-02-12
WO2009019574A8 true WO2009019574A8 (en) 2009-08-27

Family

ID=40090709

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/002063 Ceased WO2009019574A1 (en) 2007-08-06 2008-07-30 Photoresist composition for deep uv and process thereof

Country Status (3)

Country Link
US (1) US20090042148A1 (en)
TW (1) TW200916954A (en)
WO (1) WO2009019574A1 (en)

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TWI452419B (en) * 2008-01-28 2014-09-11 Ａｚ電子材料Ｉｐ股份有限公司 Fine pattern mask, manufacturing method thereof, and fine pattern forming method using same
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
EP2189846B1 (en) * 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP2189844A3 (en) * 2008-11-19 2010-07-28 Rohm and Haas Electronic Materials LLC Compositions comprising sulfonamide material and processes for photolithography
EP2189845B1 (en) * 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP3051348A1 (en) * 2008-11-19 2016-08-03 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
JP5541766B2 (en) * 2009-05-19 2014-07-09 株式会社ダイセル Method for producing polymer compound for photoresist
JP5617799B2 (en) 2010-12-07 2014-11-05 信越化学工業株式会社 Chemically amplified resist material and pattern forming method
JP6246536B2 (en) * 2012-09-21 2017-12-13 住友化学株式会社 Resin, resist composition and method for producing resist pattern
JP6650249B2 (en) * 2014-11-11 2020-02-19 住友化学株式会社 Resist composition and method for producing resist pattern
JP6744707B2 (en) * 2014-11-11 2020-08-19 住友化学株式会社 Resist composition and method for producing resist pattern
JP6902905B2 (en) * 2017-03-31 2021-07-14 東京応化工業株式会社 Resist composition and resist pattern forming method
JP6796534B2 (en) 2017-03-31 2020-12-09 東京応化工業株式会社 Resist composition and resist pattern forming method
JP7087781B2 (en) * 2017-08-09 2022-06-21 住友化学株式会社 Method for manufacturing resist composition and resist pattern
CN108132584B (en) * 2017-12-22 2020-12-08 江苏汉拓光学材料有限公司 A photoresist composition comprising polyparahydroxystyrene polymer and acrylate copolymer
CN108373520A (en) * 2017-12-22 2018-08-07 江苏汉拓光学材料有限公司 A kind of acrylate copolymer and the photoetching compositions comprising it
CN115873176B (en) * 2021-09-28 2023-09-26 上海新阳半导体材料股份有限公司 Bottom anti-reflection coating for DUV lithography and preparation method and application thereof
US20230259030A1 (en) * 2022-02-15 2023-08-17 Tokyo Electron Limited Providing a barrier layer for photoresist processing
CN120965929A (en) * 2025-10-17 2025-11-18 中节能万润股份有限公司 ArF photoresist polymer, preparation method and photoresist composition

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Also Published As

Publication number Publication date
TW200916954A (en) 2009-04-16
WO2009019574A1 (en) 2009-02-12
US20090042148A1 (en) 2009-02-12

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