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WO2009025339A1 - Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 - Google Patents

Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 Download PDF

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Publication number
WO2009025339A1
WO2009025339A1 PCT/JP2008/064952 JP2008064952W WO2009025339A1 WO 2009025339 A1 WO2009025339 A1 WO 2009025339A1 JP 2008064952 W JP2008064952 W JP 2008064952W WO 2009025339 A1 WO2009025339 A1 WO 2009025339A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
silicon single
igbt
wafer
crystal wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064952
Other languages
English (en)
French (fr)
Inventor
Toshiaki Ono
Shigeru Umeno
Koji Kato
Masataka Hourai
Manabu Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2009529065A priority Critical patent/JPWO2009025339A1/ja
Publication of WO2009025339A1 publication Critical patent/WO2009025339A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P36/20—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　引き上げ速度マージンを拡大することが可能であるとともに、リーク電流の改善ならびに抵抗率のバラツキが小さなウェーハの製造が可能であり、チョクラルスキー法によって育成されたシリコン単結晶からなるＩＧＢＴ用シリコン単結晶ウェーハであって、結晶径方向全域においてＣＯＰ欠陥、転位クラスタおよびＯＳＦ領域が排除されており、格子間酸素濃度が８．５×１０１７ａｔｏｍｓ／ｃｍ３以下であり、ウェーハ面内における抵抗率のばらつきが５％以下であることを特徴とするＩＧＢＴ用のシリコン単結晶ウェーハを採用する。
PCT/JP2008/064952 2007-08-21 2008-08-21 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 Ceased WO2009025339A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529065A JPWO2009025339A1 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007215334 2007-08-21
JP2007-215334 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025339A1 true WO2009025339A1 (ja) 2009-02-26

Family

ID=40378239

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064952 Ceased WO2009025339A1 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Country Status (2)

Country Link
JP (1) JPWO2009025339A1 (ja)
WO (1) WO2009025339A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018523626A (ja) * 2015-08-19 2018-08-23 エスケー シルトロン カンパニー リミテッド 単結晶インゴット成長装置及びその成長方法
EP4350055A1 (de) * 2022-10-06 2024-04-10 Siltronic AG Verfahren zur herstellung eines einkristalls aus silizium und halbleiterscheibe aus einkristallinem silizium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5188673B2 (ja) * 2005-06-09 2013-04-24 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコンウェーハ及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018523626A (ja) * 2015-08-19 2018-08-23 エスケー シルトロン カンパニー リミテッド 単結晶インゴット成長装置及びその成長方法
EP4350055A1 (de) * 2022-10-06 2024-04-10 Siltronic AG Verfahren zur herstellung eines einkristalls aus silizium und halbleiterscheibe aus einkristallinem silizium
WO2024074431A1 (de) * 2022-10-06 2024-04-11 Siltronic Ag Verfahren zur herstellung eines einkristalls aus silizium und halbleiterscheibe aus einkristallinem silizium

Also Published As

Publication number Publication date
JPWO2009025339A1 (ja) 2010-11-25

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