[go: up one dir, main page]

WO2009025339A1 - Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt - Google Patents

Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt Download PDF

Info

Publication number
WO2009025339A1
WO2009025339A1 PCT/JP2008/064952 JP2008064952W WO2009025339A1 WO 2009025339 A1 WO2009025339 A1 WO 2009025339A1 JP 2008064952 W JP2008064952 W JP 2008064952W WO 2009025339 A1 WO2009025339 A1 WO 2009025339A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
silicon single
igbt
wafer
crystal wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064952
Other languages
English (en)
Japanese (ja)
Inventor
Toshiaki Ono
Shigeru Umeno
Koji Kato
Masataka Hourai
Manabu Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2009529065A priority Critical patent/JPWO2009025339A1/ja
Publication of WO2009025339A1 publication Critical patent/WO2009025339A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P36/20—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention porte sur un procédé de fabrication d'une tranche qui a un courant de fuite réduit et une faible fluctuation de résistivité, avec une marge de vitesse de traction accrue. L'invention porte également sur une tranche de monocristal de silicium composée d'un monocristal de silicium poussé par la méthode de Czochralski pour IGBT. Dans la tranche, les défauts COP, les grappes de dislocation et une région OSF sont éliminés dans toute la région dans une direction de diamètre de cristal. La tranche a une concentration d'oxygène interstitiel de 8,5x1017 atomes/cm3 ou moins et une fluctuation de résistivité de 5 % ou moins à l'intérieur d'une surface de tranche.
PCT/JP2008/064952 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt Ceased WO2009025339A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529065A JPWO2009025339A1 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007215334 2007-08-21
JP2007-215334 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025339A1 true WO2009025339A1 (fr) 2009-02-26

Family

ID=40378239

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064952 Ceased WO2009025339A1 (fr) 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt

Country Status (2)

Country Link
JP (1) JPWO2009025339A1 (fr)
WO (1) WO2009025339A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018523626A (ja) * 2015-08-19 2018-08-23 エスケー シルトロン カンパニー リミテッド 単結晶インゴット成長装置及びその成長方法
EP4350055A1 (fr) * 2022-10-06 2024-04-10 Siltronic AG Procédé de fabrication d'un monocristal de silicium et plaquette semi-conductrice en silicium monocristallin

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5188673B2 (ja) * 2005-06-09 2013-04-24 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコンウェーハ及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018523626A (ja) * 2015-08-19 2018-08-23 エスケー シルトロン カンパニー リミテッド 単結晶インゴット成長装置及びその成長方法
EP4350055A1 (fr) * 2022-10-06 2024-04-10 Siltronic AG Procédé de fabrication d'un monocristal de silicium et plaquette semi-conductrice en silicium monocristallin
WO2024074431A1 (fr) * 2022-10-06 2024-04-11 Siltronic Ag Procédé de fabrication d'un monocristal de silicium, et tranche de semi-conducteur constituée de silicium monocristallin

Also Published As

Publication number Publication date
JPWO2009025339A1 (ja) 2010-11-25

Similar Documents

Publication Publication Date Title
WO2009025337A1 (fr) Tranche de monocristal de silicium pour igbt, procédé de fabrication d'une tranche de monocristal de silicium pour igbt, et procédé pour assurer la résistivité électrique d'une tranche de monocristal de silicium pour igbt
EP1881093A3 (fr) Plaque de silicium monocristalline pour IGBT et son procédé de fabrication
TW200613588A (en) Silicon wafer, method for manufacturing the same, and method for growing silicon single crystal
WO2009025340A1 (fr) Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt
WO2009025336A1 (fr) Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt
TWI265984B (en) Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same
EP2144280A4 (fr) Tranche de silicium et son procede de fabrication
TW200728523A (en) Epitaxial wafer and method for production of epitaxial wafer
US8398765B2 (en) Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation
US20090183670A1 (en) Apparatus for manufacturing high-quality semiconductor single crystal ingot and method using the same
SG144051A1 (en) Method and device for producing semiconductor wafers of silicon
TW200614379A (en) Silicon epitaxial wafer and manufacturing method for same
SG142262A1 (en) Method for manufacturing semiconductor single crystal by czochralski technology, and single crystal ingot and wafer manufactured using the same
WO2013061047A3 (fr) Épitaxie du carbure de silicium
ATE552365T1 (de) Verfahren zur herstellung eines siliciumeinkristalls und verfahren zur herstellung eines siliciumwafers
SG195154A1 (en) Method for producing gaas single crystal and gaas single crystal wafer
WO2009028134A1 (fr) Procédé de détection du diamètre d'un monocristal et appareil de traction d'un monocristal.
EP2099073A3 (fr) Substrat de silicium et son procédé de fabrication
EP2130953A3 (fr) Tranche de silicium épitaxiée et son procédé de production
WO2008146724A1 (fr) Procédé de fabrication d'un monocristal de silicium, et substrat de monocristal de silicium
AU2003284253A8 (en) Method and apparatus for crystal growth
EP2565301A4 (fr) Cristal de carbure de silicium et procédé de fabrication de cristal de carbure de silicium
WO2009025339A1 (fr) Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt
EP2112254A3 (fr) Substrat de silicium et son procédé de fabrication
EP1981083A3 (fr) Procédé de fabrication d'un substrat SOI

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08792623

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009529065

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08792623

Country of ref document: EP

Kind code of ref document: A1