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WO2009025365A1 - Dispositif de télémétrie - Google Patents

Dispositif de télémétrie Download PDF

Info

Publication number
WO2009025365A1
WO2009025365A1 PCT/JP2008/065033 JP2008065033W WO2009025365A1 WO 2009025365 A1 WO2009025365 A1 WO 2009025365A1 JP 2008065033 W JP2008065033 W JP 2008065033W WO 2009025365 A1 WO2009025365 A1 WO 2009025365A1
Authority
WO
WIPO (PCT)
Prior art keywords
transfer
extraneous light
carriers
unit period
φcd2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065033
Other languages
English (en)
Japanese (ja)
Inventor
Mitsuhito Mase
Takashi Suzuki
Seiichiro Mizuno
Mitsutaka Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of WO2009025365A1 publication Critical patent/WO2009025365A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Measurement Of Optical Distance (AREA)
  • Automatic Focus Adjustment (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Focusing (AREA)

Abstract

Si l'amplitude d'une tension de transfert est amenée à être plus petite à un temps de transfert pour une intensité plus élevée d'une lumière parasite, la barrière devient plus élevée de telle sorte que les porteurs de la quantité électrique plus importante sont laissés dans des premier et second puits de potentiel ΦCD1 et ΦCD2. Une période unitaire est définie indépendamment de l'intensité de la lumière parasite. Plus l'intensité de la lumière parasite est élevée, et plus un nombre important de porteurs sont laissés et sont éliminés de ceux devant être finalement extraits. Si la lumière parasite est forte, le nombre de transferts par période unitaire est augmenté de telle sorte que le transfert est effectué avant que les porteurs devant être stockés dans les premier et second puits de potentiel ΦCD1 et ΦCD2 ne soient saturés. Si la lumière parasite est faible, le nombre de transferts par période unitaire est diminué pour n'effectuer aucun transfert en excès, de telle sorte que la quantité électrique devant être stockée pendant un temps unitaire peut être augmentée pour améliorer la précision de détection pendant une période de temps de détection courte.
PCT/JP2008/065033 2007-08-22 2008-08-22 Dispositif de télémétrie Ceased WO2009025365A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007216516A JP2009047661A (ja) 2007-08-22 2007-08-22 測距装置
JP2007-216516 2007-08-22

Publications (1)

Publication Number Publication Date
WO2009025365A1 true WO2009025365A1 (fr) 2009-02-26

Family

ID=40378265

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065033 Ceased WO2009025365A1 (fr) 2007-08-22 2008-08-22 Dispositif de télémétrie

Country Status (2)

Country Link
JP (1) JP2009047661A (fr)
WO (1) WO2009025365A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011129149A1 (fr) * 2010-04-14 2011-10-20 浜松ホトニクス株式会社 Élément semi-conducteur photo-détecteur
US10230914B2 (en) 2014-02-07 2019-03-12 National University Corporation Shizuoka University Charge modulation element and solid-state imaging device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5171157B2 (ja) * 2007-08-22 2013-03-27 浜松ホトニクス株式会社 測距装置
JP5089289B2 (ja) * 2007-08-22 2012-12-05 浜松ホトニクス株式会社 測距センサ及び測距装置
JP5171158B2 (ja) 2007-08-22 2013-03-27 浜松ホトニクス株式会社 固体撮像装置及び距離画像測定装置
JP5154862B2 (ja) * 2007-08-22 2013-02-27 浜松ホトニクス株式会社 測距装置
KR101884952B1 (ko) * 2010-01-06 2018-08-02 헵타곤 마이크로 옵틱스 피티이. 리미티드 별도의 화소 및 저장 어레이를 갖는 복조(復調) 센서
JP5502694B2 (ja) * 2010-10-12 2014-05-28 浜松ホトニクス株式会社 距離センサ及び距離画像センサ
JP6026755B2 (ja) * 2012-02-28 2016-11-16 浜松ホトニクス株式会社 距離センサ及び距離画像センサ
KR20170009882A (ko) * 2014-04-26 2017-01-25 테트라뷰 인코포레이티드 3d 이미징의 심도감지용의 강력하고 확대된 광조사 파형을 위한 방법 및 시스템
JP6386777B2 (ja) 2014-05-08 2018-09-05 浜松ホトニクス株式会社 距離画像センサ
JP6539990B2 (ja) * 2014-11-14 2019-07-10 株式会社デンソー 光飛行型測距装置
DE112015005163B4 (de) * 2014-11-14 2025-02-06 Denso Corporation Flugzeitabstandsmessvorrichtung
JP6424581B2 (ja) * 2014-11-21 2018-11-21 株式会社デンソー 光飛行型測距装置
WO2021085172A1 (fr) * 2019-10-30 2021-05-06 ソニーセミコンダクタソリューションズ株式会社 Élément de réception de lumière, module de télémétrie et instrument électronique
KR102857511B1 (ko) * 2019-12-26 2025-09-09 하마마츠 포토닉스 가부시키가이샤 측거 이미지 센서
JP6913840B1 (ja) * 2019-12-26 2021-08-04 浜松ホトニクス株式会社 測距イメージセンサ及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007026777A1 (fr) * 2005-08-30 2007-03-08 National University Corporation Shizuoka University Élément de mesure de distance semi-conducteur et dispositif d’imagerie à l’état solide
WO2007055375A1 (fr) * 2005-11-14 2007-05-18 Matsushita Electric Works, Ltd. Appareil de detection d'information d'espace et detecteur photo-electrique preferable a cela

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4280822B2 (ja) * 2004-02-18 2009-06-17 国立大学法人静岡大学 光飛行時間型距離センサ
US7781811B2 (en) * 2005-08-30 2010-08-24 National University Corporation Shizuoka University Semiconductor range-finding element and solid-state imaging device
WO2007119626A1 (fr) * 2006-03-31 2007-10-25 National University Corporation Shizuoka University Element semiconducteur de mesure de distance et element a solide de formation d'image
JP5089289B2 (ja) * 2007-08-22 2012-12-05 浜松ホトニクス株式会社 測距センサ及び測距装置
JP5171158B2 (ja) * 2007-08-22 2013-03-27 浜松ホトニクス株式会社 固体撮像装置及び距離画像測定装置
JP5154862B2 (ja) * 2007-08-22 2013-02-27 浜松ホトニクス株式会社 測距装置
JP5171157B2 (ja) * 2007-08-22 2013-03-27 浜松ホトニクス株式会社 測距装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007026777A1 (fr) * 2005-08-30 2007-03-08 National University Corporation Shizuoka University Élément de mesure de distance semi-conducteur et dispositif d’imagerie à l’état solide
WO2007055375A1 (fr) * 2005-11-14 2007-05-18 Matsushita Electric Works, Ltd. Appareil de detection d'information d'espace et detecteur photo-electrique preferable a cela

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011129149A1 (fr) * 2010-04-14 2011-10-20 浜松ホトニクス株式会社 Élément semi-conducteur photo-détecteur
JP2011222893A (ja) * 2010-04-14 2011-11-04 Hamamatsu Photonics Kk 半導体光検出素子
EP2560215A4 (fr) * 2010-04-14 2014-04-09 Hamamatsu Photonics Kk Élément semi-conducteur photo-détecteur
US9293499B2 (en) 2010-04-14 2016-03-22 Hamamatsu Photonics K.K. Semiconductor light detecting element having silicon substrate and conductor
KR101787787B1 (ko) 2010-04-14 2017-10-18 하마마츠 포토닉스 가부시키가이샤 반도체 광검출 소자
US10230914B2 (en) 2014-02-07 2019-03-12 National University Corporation Shizuoka University Charge modulation element and solid-state imaging device

Also Published As

Publication number Publication date
JP2009047661A (ja) 2009-03-05

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