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WO2009025365A1 - Range-finding device - Google Patents

Range-finding device Download PDF

Info

Publication number
WO2009025365A1
WO2009025365A1 PCT/JP2008/065033 JP2008065033W WO2009025365A1 WO 2009025365 A1 WO2009025365 A1 WO 2009025365A1 JP 2008065033 W JP2008065033 W JP 2008065033W WO 2009025365 A1 WO2009025365 A1 WO 2009025365A1
Authority
WO
WIPO (PCT)
Prior art keywords
transfer
extraneous light
carriers
unit period
φcd2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065033
Other languages
French (fr)
Japanese (ja)
Inventor
Mitsuhito Mase
Takashi Suzuki
Seiichiro Mizuno
Mitsutaka Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of WO2009025365A1 publication Critical patent/WO2009025365A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Measurement Of Optical Distance (AREA)
  • Automatic Focus Adjustment (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Focusing (AREA)

Abstract

If the magnitude of a transfer voltage is made the smaller at a transfer time for the higher intensity of an extraneous light, the barrier becomes the higher so that the carriers of the larger electric quantity are left in first and second potential wells ΦCD1 and ΦCD2. A unit period is set independently of the intensity of the extraneous light. For the higher intensity of the extraneous light, the more carriers are left and are eliminated from those to be finally read out. If the extraneous light is strong, the transfer number per unit period is increased so that the transfer is performed before the carriers to be stored in the first and second potential wells ΦCD1 and ΦCD2 are saturated. If the extraneous light is weak, the transfer number per unit period is decreased to perform no excess transfer, so that the electric quantity to be stored for a unit time can be increased to improve the detection precision for a short detection time period.
PCT/JP2008/065033 2007-08-22 2008-08-22 Range-finding device Ceased WO2009025365A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007216516A JP2009047661A (en) 2007-08-22 2007-08-22 Ranging device
JP2007-216516 2007-08-22

Publications (1)

Publication Number Publication Date
WO2009025365A1 true WO2009025365A1 (en) 2009-02-26

Family

ID=40378265

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065033 Ceased WO2009025365A1 (en) 2007-08-22 2008-08-22 Range-finding device

Country Status (2)

Country Link
JP (1) JP2009047661A (en)
WO (1) WO2009025365A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011129149A1 (en) * 2010-04-14 2011-10-20 浜松ホトニクス株式会社 Semiconductor light detecting element
US10230914B2 (en) 2014-02-07 2019-03-12 National University Corporation Shizuoka University Charge modulation element and solid-state imaging device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5171157B2 (en) * 2007-08-22 2013-03-27 浜松ホトニクス株式会社 Ranging device
JP5089289B2 (en) * 2007-08-22 2012-12-05 浜松ホトニクス株式会社 Ranging sensor and ranging device
JP5171158B2 (en) 2007-08-22 2013-03-27 浜松ホトニクス株式会社 Solid-state imaging device and range image measuring device
JP5154862B2 (en) * 2007-08-22 2013-02-27 浜松ホトニクス株式会社 Ranging device
KR101884952B1 (en) * 2010-01-06 2018-08-02 헵타곤 마이크로 옵틱스 피티이. 리미티드 Demodulation sensor with separate pixel and storage arrays
JP5502694B2 (en) * 2010-10-12 2014-05-28 浜松ホトニクス株式会社 Distance sensor and distance image sensor
JP6026755B2 (en) * 2012-02-28 2016-11-16 浜松ホトニクス株式会社 Distance sensor and distance image sensor
KR20170009882A (en) * 2014-04-26 2017-01-25 테트라뷰 인코포레이티드 Method and system for robust and extended illumination waveforms for depth sensing in 3d imaging
JP6386777B2 (en) 2014-05-08 2018-09-05 浜松ホトニクス株式会社 Distance image sensor
JP6539990B2 (en) * 2014-11-14 2019-07-10 株式会社デンソー Optical flight type distance measuring device
DE112015005163B4 (en) * 2014-11-14 2025-02-06 Denso Corporation FLIGHT TIME DISTANCE MEASURING DEVICE
JP6424581B2 (en) * 2014-11-21 2018-11-21 株式会社デンソー Optical flight type distance measuring device
WO2021085172A1 (en) * 2019-10-30 2021-05-06 ソニーセミコンダクタソリューションズ株式会社 Light receiving element, ranging module, and electronic instrument
KR102857511B1 (en) * 2019-12-26 2025-09-09 하마마츠 포토닉스 가부시키가이샤 distance image sensor
JP6913840B1 (en) * 2019-12-26 2021-08-04 浜松ホトニクス株式会社 Distance measurement image sensor and its manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007026777A1 (en) * 2005-08-30 2007-03-08 National University Corporation Shizuoka University Semiconductor distance measuring element and solid-state imaging device
WO2007055375A1 (en) * 2005-11-14 2007-05-18 Matsushita Electric Works, Ltd. Space information detecting apparatus and photoelectric detector preferable to the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4280822B2 (en) * 2004-02-18 2009-06-17 国立大学法人静岡大学 Optical time-of-flight distance sensor
US7781811B2 (en) * 2005-08-30 2010-08-24 National University Corporation Shizuoka University Semiconductor range-finding element and solid-state imaging device
WO2007119626A1 (en) * 2006-03-31 2007-10-25 National University Corporation Shizuoka University Semiconductor distance-measuring element and solid-state imaging element
JP5089289B2 (en) * 2007-08-22 2012-12-05 浜松ホトニクス株式会社 Ranging sensor and ranging device
JP5171158B2 (en) * 2007-08-22 2013-03-27 浜松ホトニクス株式会社 Solid-state imaging device and range image measuring device
JP5154862B2 (en) * 2007-08-22 2013-02-27 浜松ホトニクス株式会社 Ranging device
JP5171157B2 (en) * 2007-08-22 2013-03-27 浜松ホトニクス株式会社 Ranging device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007026777A1 (en) * 2005-08-30 2007-03-08 National University Corporation Shizuoka University Semiconductor distance measuring element and solid-state imaging device
WO2007055375A1 (en) * 2005-11-14 2007-05-18 Matsushita Electric Works, Ltd. Space information detecting apparatus and photoelectric detector preferable to the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011129149A1 (en) * 2010-04-14 2011-10-20 浜松ホトニクス株式会社 Semiconductor light detecting element
JP2011222893A (en) * 2010-04-14 2011-11-04 Hamamatsu Photonics Kk Semiconductor photodetector
EP2560215A4 (en) * 2010-04-14 2014-04-09 Hamamatsu Photonics Kk PHOTO-DETECTOR SEMICONDUCTOR ELEMENT
US9293499B2 (en) 2010-04-14 2016-03-22 Hamamatsu Photonics K.K. Semiconductor light detecting element having silicon substrate and conductor
KR101787787B1 (en) 2010-04-14 2017-10-18 하마마츠 포토닉스 가부시키가이샤 Semiconductor light detecting element
US10230914B2 (en) 2014-02-07 2019-03-12 National University Corporation Shizuoka University Charge modulation element and solid-state imaging device

Also Published As

Publication number Publication date
JP2009047661A (en) 2009-03-05

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