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WO2009025342A1 - Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 - Google Patents

Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 Download PDF

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Publication number
WO2009025342A1
WO2009025342A1 PCT/JP2008/064955 JP2008064955W WO2009025342A1 WO 2009025342 A1 WO2009025342 A1 WO 2009025342A1 JP 2008064955 W JP2008064955 W JP 2008064955W WO 2009025342 A1 WO2009025342 A1 WO 2009025342A1
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WO
WIPO (PCT)
Prior art keywords
single crystal
silicon single
igbt
wafer
crystal wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064955
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English (en)
French (fr)
Inventor
Yoshihiro Koga
Shigeru Umeno
Toshiaki Ono
Manabu Nishimoto
Masataka Hourai
Koji Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2009529068A priority Critical patent/JP5387408B2/ja
Publication of WO2009025342A1 publication Critical patent/WO2009025342A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P36/20—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　引き上げ速度マージンを拡大することが可能であるとともに、抵抗率のバラツキが小さく酸素析出を抑制可能なウェーハの製造が可能なチョクラルスキー法によってシリコン単結晶を育成することにより得られるＩＧＢＴ用シリコン単結晶ウェーハの製造方法であって、シリコン単結晶の引き上げ速度をＧｒｏｗｎ－ｉｎ欠陥フリーなシリコン単結晶が引き上げ可能な速度で、格子間酸素濃度が０．５×１０１７ａｔｏｍｓ／ｃｍ３以上８．５×１０１７ａｔｏｍｓ／ｃｍ３以下の単結晶を育成し、この単結晶からスライスしたシリコンウェーハに処理温度１０００～１２００°Cの範囲、窒素を含まない雰囲気で1分以上のＲＴＡ処理を施すことで酸素析出核やOSF核を消滅させ、ＩＧＢＴ用デバイスプロセス熱処理後にも酸素析出を抑制可能とする。
PCT/JP2008/064955 2007-08-21 2008-08-21 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法 Ceased WO2009025342A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529068A JP5387408B2 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007215336 2007-08-21
JP2007-215336 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025342A1 true WO2009025342A1 (ja) 2009-02-26

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PCT/JP2008/064955 Ceased WO2009025342A1 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Country Status (2)

Country Link
JP (1) JP5387408B2 (ja)
WO (1) WO2009025342A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010263009A (ja) * 2009-04-30 2010-11-18 Sumco Corp シリコンウェーハおよびその製造方法
CN102605433A (zh) * 2012-01-09 2012-07-25 浙江大学 一种消除掺氮直拉单晶硅片中原生氧沉淀的方法
WO2012101957A1 (ja) * 2011-01-24 2012-08-02 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びアニールウェーハ
JP2013048137A (ja) * 2011-08-29 2013-03-07 Covalent Silicon Co Ltd シリコンウェーハの製造方法
JP2018100196A (ja) * 2016-12-20 2018-06-28 株式会社Sumco シリコン単結晶の製造方法
WO2019154729A1 (de) * 2018-02-06 2019-08-15 Siltronic Ag Verfahren und vorrichtung zum ziehen eines einkristalls, einkristall und halbleiterscheibe
WO2025033083A1 (ja) * 2023-08-09 2025-02-13 株式会社Sumco シリコンウェーハ及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7264100B2 (ja) * 2020-04-02 2023-04-25 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006344823A (ja) * 2005-06-09 2006-12-21 Sumco Corp Ｉｇｂｔ用のシリコンウェーハ及びその製造方法
JP2007022863A (ja) * 2005-07-19 2007-02-01 Sumco Corp シリコン単結晶の育成方法およびシリコンウェーハの製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006344823A (ja) * 2005-06-09 2006-12-21 Sumco Corp Ｉｇｂｔ用のシリコンウェーハ及びその製造方法
JP2007022863A (ja) * 2005-07-19 2007-02-01 Sumco Corp シリコン単結晶の育成方法およびシリコンウェーハの製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010263009A (ja) * 2009-04-30 2010-11-18 Sumco Corp シリコンウェーハおよびその製造方法
CN103328696B (zh) * 2011-01-24 2016-05-11 信越半导体股份有限公司 单晶硅晶片的制造方法及退火晶片
KR101750688B1 (ko) * 2011-01-24 2017-06-26 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 웨이퍼의 제조방법 및 어닐링된 웨이퍼
WO2012101957A1 (ja) * 2011-01-24 2012-08-02 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びアニールウェーハ
JP2012153548A (ja) * 2011-01-24 2012-08-16 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハの製造方法及びアニールウェーハ
CN103328696A (zh) * 2011-01-24 2013-09-25 信越半导体股份有限公司 单晶硅晶片的制造方法及退火晶片
DE112012000306T5 (de) 2011-01-24 2013-09-26 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Silizium-Einkristallwafers und eines thermisch behandelten Wafers
US8916953B2 (en) 2011-01-24 2014-12-23 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon single crystal wafer and annealed wafer
JP2013048137A (ja) * 2011-08-29 2013-03-07 Covalent Silicon Co Ltd シリコンウェーハの製造方法
CN102605433A (zh) * 2012-01-09 2012-07-25 浙江大学 一种消除掺氮直拉单晶硅片中原生氧沉淀的方法
JP2018100196A (ja) * 2016-12-20 2018-06-28 株式会社Sumco シリコン単結晶の製造方法
WO2018116637A1 (ja) * 2016-12-20 2018-06-28 株式会社Sumco シリコン単結晶の製造方法
KR20190089978A (ko) * 2016-12-20 2019-07-31 가부시키가이샤 사무코 실리콘 단결정 제조 방법
KR102265466B1 (ko) 2016-12-20 2021-06-15 가부시키가이샤 사무코 실리콘 단결정 제조 방법
US11242617B2 (en) 2016-12-20 2022-02-08 Sumco Corporation Method for producing silicon single crystal
WO2019154729A1 (de) * 2018-02-06 2019-08-15 Siltronic Ag Verfahren und vorrichtung zum ziehen eines einkristalls, einkristall und halbleiterscheibe
WO2025033083A1 (ja) * 2023-08-09 2025-02-13 株式会社Sumco シリコンウェーハ及びその製造方法

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JPWO2009025342A1 (ja) 2010-11-25
JP5387408B2 (ja) 2014-01-15

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