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WO2009025341A1 - Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt - Google Patents

Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt Download PDF

Info

Publication number
WO2009025341A1
WO2009025341A1 PCT/JP2008/064954 JP2008064954W WO2009025341A1 WO 2009025341 A1 WO2009025341 A1 WO 2009025341A1 JP 2008064954 W JP2008064954 W JP 2008064954W WO 2009025341 A1 WO2009025341 A1 WO 2009025341A1
Authority
WO
WIPO (PCT)
Prior art keywords
igbt
single crystal
silicon single
wafer
crystal wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064954
Other languages
English (en)
Japanese (ja)
Inventor
Shigeru Umeno
Koji Kato
Toshiaki Ono
Manabu Nishimoto
Masataka Hourai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2009529067A priority Critical patent/JPWO2009025341A1/ja
Publication of WO2009025341A1 publication Critical patent/WO2009025341A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P36/20—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention porte sur un procédé de fabrication d'une tranche, suivant lequel une marge de vitesse de traction peut être accrue et une tranche ayant un taux réduit de défaillances de fuite de jonction p/n avec une petite fluctuation de résistivité peut être fabriquée. L'invention porte également sur une tranche de monocristal de silicium composée d'un monocristal de silicium poussé par la méthode de Czochralski pour IGBT. Dans la tranche, les défauts COP et les grappes de dislocation sont éliminés dans toute la région dans une direction de diamètre de cristal. La tranche a un taux de défaillances rupture de fuite de jonction p/n de 3 % ou moins après traitement thermique qui simule un traitement thermique dans le procédé de fabrication des IGBT.
PCT/JP2008/064954 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt Ceased WO2009025341A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529067A JPWO2009025341A1 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007215333 2007-08-21
JP2007-215333 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025341A1 true WO2009025341A1 (fr) 2009-02-26

Family

ID=40378241

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064954 Ceased WO2009025341A1 (fr) 2007-08-21 2008-08-21 Tranche de monocristal de silicium pour igbt et procédé de fabrication d'une tranche de monocristal de silicium pour igbt

Country Status (2)

Country Link
JP (1) JPWO2009025341A1 (fr)
WO (1) WO2009025341A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012089392A1 (fr) * 2010-12-28 2012-07-05 Siltronic Ag Procédé de fabrication d'un monocristal de silicium, monocristal de silicium et tranche

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2006344823A (ja) * 2005-06-09 2006-12-21 Sumco Corp Ｉｇｂｔ用のシリコンウェーハ及びその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7563319B2 (en) * 2003-02-14 2009-07-21 Sumitomo Mitsubishi Silicon Corporation Manufacturing method of silicon wafer
JPWO2004083496A1 (ja) * 2003-02-25 2006-06-22 株式会社Sumco シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2006312575A (ja) * 2005-04-08 2006-11-16 Sumco Corp シリコンウェーハおよびその製造方法
JP2006344823A (ja) * 2005-06-09 2006-12-21 Sumco Corp Ｉｇｂｔ用のシリコンウェーハ及びその製造方法
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012089392A1 (fr) * 2010-12-28 2012-07-05 Siltronic Ag Procédé de fabrication d'un monocristal de silicium, monocristal de silicium et tranche
JP2012148949A (ja) * 2010-12-28 2012-08-09 Siltronic Ag シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
US8961685B2 (en) 2010-12-28 2015-02-24 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer

Also Published As

Publication number Publication date
JPWO2009025341A1 (ja) 2010-11-25

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