[go: up one dir, main page]

WO2009025341A1 - Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt - Google Patents

Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt Download PDF

Info

Publication number
WO2009025341A1
WO2009025341A1 PCT/JP2008/064954 JP2008064954W WO2009025341A1 WO 2009025341 A1 WO2009025341 A1 WO 2009025341A1 JP 2008064954 W JP2008064954 W JP 2008064954W WO 2009025341 A1 WO2009025341 A1 WO 2009025341A1
Authority
WO
WIPO (PCT)
Prior art keywords
igbt
single crystal
silicon single
wafer
crystal wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064954
Other languages
French (fr)
Japanese (ja)
Inventor
Shigeru Umeno
Koji Kato
Toshiaki Ono
Manabu Nishimoto
Masataka Hourai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2009529067A priority Critical patent/JPWO2009025341A1/en
Publication of WO2009025341A1 publication Critical patent/WO2009025341A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P36/20—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Provided is a method for manufacturing a wafer, by which a pulling speed margin can be increased and a wafer having a reduced p/n junction leak failure ratio with a small resistivity fluctuation can be manufactured. A silicon single crystal wafer composed of silicon single crystal grown by Czochralski method is also provided for IGBT. In the wafer, COP defects and dislocation clusters are eliminated in the entire region in a crystal diameter direction. The wafer has a p/n junction leak failure ratio of 3% or less after heat treatment which simulates heat treatment in the IGBT manufacturing process.
PCT/JP2008/064954 2007-08-21 2008-08-21 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt Ceased WO2009025341A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529067A JPWO2009025341A1 (en) 2007-08-21 2008-08-21 Silicon single crystal wafer for IGBT and manufacturing method of silicon single crystal wafer for IGBT

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007215333 2007-08-21
JP2007-215333 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025341A1 true WO2009025341A1 (en) 2009-02-26

Family

ID=40378241

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064954 Ceased WO2009025341A1 (en) 2007-08-21 2008-08-21 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt

Country Status (2)

Country Link
JP (1) JPWO2009025341A1 (en)
WO (1) WO2009025341A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012089392A1 (en) * 2010-12-28 2012-07-05 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (en) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd Method for manufacturing silicon single crystal, method for designing apparatus for manufacturing silicon single crystal, and apparatus for manufacturing silicon single crystal
JP2006312575A (en) * 2005-04-08 2006-11-16 Sumco Corp Silicon wafer and manufacturing method thereof
JP2006344823A (en) * 2005-06-09 2006-12-21 Sumco Corp Silicon wafer for IGBT and method for manufacturing the same
JP2007191350A (en) * 2006-01-19 2007-08-02 Sumco Corp Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7563319B2 (en) * 2003-02-14 2009-07-21 Sumitomo Mitsubishi Silicon Corporation Manufacturing method of silicon wafer
JPWO2004083496A1 (en) * 2003-02-25 2006-06-22 株式会社Sumco Silicon wafer, method for producing the same, and method for growing silicon single crystal

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (en) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd Method for manufacturing silicon single crystal, method for designing apparatus for manufacturing silicon single crystal, and apparatus for manufacturing silicon single crystal
JP2006312575A (en) * 2005-04-08 2006-11-16 Sumco Corp Silicon wafer and manufacturing method thereof
JP2006344823A (en) * 2005-06-09 2006-12-21 Sumco Corp Silicon wafer for IGBT and method for manufacturing the same
JP2007191350A (en) * 2006-01-19 2007-08-02 Sumco Corp Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012089392A1 (en) * 2010-12-28 2012-07-05 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer
JP2012148949A (en) * 2010-12-28 2012-08-09 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer
US8961685B2 (en) 2010-12-28 2015-02-24 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer

Also Published As

Publication number Publication date
JPWO2009025341A1 (en) 2010-11-25

Similar Documents

Publication Publication Date Title
WO2009025337A1 (en) Silicon single crystal wafer for igbt, process for producing silicon single crystal wafer for igbt, and method for ensuring electric resistivity of silicon single crystal wafer for igbt
SG144857A1 (en) Semiconductor wafers of silicon and method for their production
EP2144280A4 (en) SILICON WAFER AND METHOD FOR MANUFACTURING SAME
WO2008123213A1 (en) Semiconductor device and semiconductor manufacturing method
TW200738920A (en) Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT
TW200613588A (en) Silicon wafer, method for manufacturing the same, and method for growing silicon single crystal
MY147106A (en) Method for manufacturing epitaxial wafer
JP2010215506A5 (en) Single crystal group III-V nitride material, method of manufacturing the same, article and wafer
SG142262A1 (en) Method for manufacturing semiconductor single crystal by czochralski technology, and single crystal ingot and wafer manufactured using the same
WO2009013914A1 (en) Sic epitaxial substrate and process for producing the same
TW200730671A (en) Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystaline cast silicon bodies for photovoltaics
WO2009014957A3 (en) Methods for manufacturing cast silicon from seed crystals
WO2012134092A3 (en) Method of manufacturing single crystal ingot, and single crystal ingot and wafer manufactured thereby
SG144051A1 (en) Method and device for producing semiconductor wafers of silicon
WO2008093576A1 (en) Silicon crystalline material and method for manufacturing the same
WO2009025336A1 (en) Silicon single crystal wafer for igbt and process for producing silicon single crystal wafer for igbt
ATE538494T1 (en) METHOD FOR PRODUCING A SSOI SUBSTRATE
WO2009140406A3 (en) Crystal growth apparatus for solar cell manufacturing
WO2009025341A1 (en) Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
WO2009025338A1 (en) Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
TW200739688A (en) Method for manufacturing epitaxial wafer and epitaxial wafer
MX2022011946A (en) Zoned and/or layered substrates and method and apparatus for producing the same.
CN204918835U (en) Guide cylinder structure for improving resistivity uniformity of czochralski silicon single crystal
WO2008120435A1 (en) Method of growing single crystal and single crystal pulling apparatus
SG142208A1 (en) Process for producing p»-doped and epitaxially coated semiconductor wafers from silicon

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08792625

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009529067

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08792625

Country of ref document: EP

Kind code of ref document: A1