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WO2009020091A1 - Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット - Google Patents

Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット Download PDF

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Publication number
WO2009020091A1
WO2009020091A1 PCT/JP2008/063954 JP2008063954W WO2009020091A1 WO 2009020091 A1 WO2009020091 A1 WO 2009020091A1 JP 2008063954 W JP2008063954 W JP 2008063954W WO 2009020091 A1 WO2009020091 A1 WO 2009020091A1
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WIPO (PCT)
Prior art keywords
ito
sputtering target
sintered body
ito sputtering
target material
Prior art date
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Ceased
Application number
PCT/JP2008/063954
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English (en)
French (fr)
Inventor
Kazuo Matsumae
Seiichiro Takahashi
Hiromitsu Hayashi
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Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
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Publication of WO2009020091A1 publication Critical patent/WO2009020091A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

　本発明は、物性の優れたＩＴＯ膜をより一層向上した歩留りで成膜できるＩＴＯ焼結体、ＩＴＯスパッタリングターゲット材およびＩＴＯスパッタリングターゲット、とくにバルク抵抗値の低いＩＴＯ焼結体を用いることで、低抵抗かつ非晶質安定性に優れた膜が得られるＩＴＯスパッタリングターゲット材およびＩＴＯスパッタリングターゲット、ならびにこれらに好適なＩＴＯ焼結体を製造する方法を提供することを目的とする。本発明のＩＴＯ焼結体は、主結晶粒であるＩｎ2Ｏ3母相内にＩｎ4Ｓｎ3Ｏ12からなる微細粒子が存在するＩＴＯ（Indium-Tin-Oxide）焼結体であって、該微細粒子が粒子の仮想中心から放射線状に針状突起が形成された立体星状形状を有することを特徴とする。
PCT/JP2008/063954 2007-08-06 2008-08-04 Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット Ceased WO2009020091A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-204639 2007-08-06
JP2007204639A JP2009040621A (ja) 2007-08-06 2007-08-06 Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット

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Publication Number Publication Date
WO2009020091A1 true WO2009020091A1 (ja) 2009-02-12

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PCT/JP2008/063954 Ceased WO2009020091A1 (ja) 2007-08-06 2008-08-04 Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット

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JP (1) JP2009040621A (ja)
KR (1) KR20090082267A (ja)
CN (1) CN101622208A (ja)
TW (1) TW200925308A (ja)
WO (1) WO2009020091A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125588A1 (ja) * 2014-02-18 2015-08-27 三井金属鉱業株式会社 Ｉｔｏスパッタリングターゲット材およびその製造方法
WO2016174877A1 (ja) * 2015-04-30 2016-11-03 三井金属鉱業株式会社 Ｉｔｏスパッタリングターゲット材

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102910900B (zh) * 2012-10-31 2014-07-09 中南大学 一种铟锡氧化物靶材的制备方法
CN103922703B (zh) * 2014-04-15 2015-04-15 广西华锡集团股份有限公司 氧化铟锡靶材以及其烧结制备方法
WO2016072441A1 (ja) 2014-11-07 2016-05-12 Ｊｘ金属株式会社 Ｉｔｏスパッタリングターゲット及びその製造方法並びにｉｔｏ透明導電膜及びｉｔｏ透明導電膜の製造方法
CN110002853A (zh) * 2019-04-28 2019-07-12 郑州大学 两步烧结工艺制备igzo陶瓷靶材的方法
CN111394706B (zh) * 2020-03-06 2022-04-08 郑州大学 一种晶粒尺寸可控ito陶瓷靶材的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11100253A (ja) * 1997-09-25 1999-04-13 Tosoh Corp Ｉｔｏ焼結体の再生方法および用途
JP2000233969A (ja) * 1998-12-08 2000-08-29 Tosoh Corp Ｉｔｏスパッタリングターゲットおよび透明導電膜の製造方法
JP2007211265A (ja) * 2006-02-07 2007-08-23 Mitsui Mining & Smelting Co Ltd Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット
JP2007230853A (ja) * 2006-03-03 2007-09-13 Tosoh Corp Ｉｔｏ粉末及びその製造方法並びにｉｔｏスパッタリングターゲットの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11100253A (ja) * 1997-09-25 1999-04-13 Tosoh Corp Ｉｔｏ焼結体の再生方法および用途
JP2000233969A (ja) * 1998-12-08 2000-08-29 Tosoh Corp Ｉｔｏスパッタリングターゲットおよび透明導電膜の製造方法
JP2007211265A (ja) * 2006-02-07 2007-08-23 Mitsui Mining & Smelting Co Ltd Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット
JP2007230853A (ja) * 2006-03-03 2007-09-13 Tosoh Corp Ｉｔｏ粉末及びその製造方法並びにｉｔｏスパッタリングターゲットの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125588A1 (ja) * 2014-02-18 2015-08-27 三井金属鉱業株式会社 Ｉｔｏスパッタリングターゲット材およびその製造方法
JP5816394B1 (ja) * 2014-02-18 2015-11-18 三井金属鉱業株式会社 Ｉｔｏスパッタリングターゲット材およびその製造方法
WO2016174877A1 (ja) * 2015-04-30 2016-11-03 三井金属鉱業株式会社 Ｉｔｏスパッタリングターゲット材
JPWO2016174877A1 (ja) * 2015-04-30 2018-02-22 三井金属鉱業株式会社 Ｉｔｏスパッタリングターゲット材

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Publication number Publication date
KR20090082267A (ko) 2009-07-29
CN101622208A (zh) 2010-01-06
TW200925308A (en) 2009-06-16
JP2009040621A (ja) 2009-02-26

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