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WO2009003848A1 - Structure laser au silicium basée sur les défauts - Google Patents

Structure laser au silicium basée sur les défauts Download PDF

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Publication number
WO2009003848A1
WO2009003848A1 PCT/EP2008/057801 EP2008057801W WO2009003848A1 WO 2009003848 A1 WO2009003848 A1 WO 2009003848A1 EP 2008057801 W EP2008057801 W EP 2008057801W WO 2009003848 A1 WO2009003848 A1 WO 2009003848A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
substrate
laser diode
region
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/057801
Other languages
German (de)
English (en)
Inventor
Martin Kittler
Teimuraz Mchedlidze
Tzanimir Arguirov
Manfred Reiche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IHP GmbH
Original Assignee
IHP GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IHP GmbH filed Critical IHP GmbH
Publication of WO2009003848A1 publication Critical patent/WO2009003848A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si
    • H01S5/3227—Si porous Si

Definitions

  • the invention relates to a semiconductor laser diode.
  • the present invention relates to a silicon-based semiconductor laser diode of VCSEL (Vertical Cavity Surface Emitting Laser) type, that is, a surface emitting laser diode having a vertical laser cavity.
  • VCSEL Vertical Cavity Surface Emitting Laser
  • WO 2006/1 17389 A1 discloses a displacement-based silicon-based light emitter.
  • the light emission is caused by certain emissions of the known silicon D-luminescence band.
  • Luminescence with light wavelengths in the range of 1, 3 microns or 1, 55 microns can be conveyed by selective adjustment of rotation and tilt angle of the lattice structures of two adjacent silicon layers.
  • the D-luminescence band (also referred to as D-band luminescence) is then caused by electronic multilevel systems, which are strongly localized in the region of a dislocation network at the interface between the two silicon layers, cf. T. Sekiguchi, S. Ito, A.
  • Kanai “Cathodoluminescence study on the tilt and twist boundaries in bonded silicon wafers", Materials Science and Engineering B 91-92 (2002), pages 244-247.
  • WO 2006/117389 A1 it is stated that the light emitter described there can also be designed as a laser diode. It is further described that a resonator can be produced either by mirroring the substrate edges or alternatively by mirroring the substrate surfaces. The latter corresponds to a VCSEL structure.
  • the technical problem underlying the present invention is to provide a silicon semiconductor laser diode having light emission caused by defects, which has an increased light emission.
  • a semiconductor laser diode according to claim 1 More specifically, it is a VCSEL type semiconductor laser diode
  • a laser cavity made of silicon or silicon germanium, which extends from a main surface of the silicon substrate into the interior of the substrate and has, as resonator end faces, a first mirror layer on the substrate surface intended for light emission and a buried second mirror layer in the silicon substrate;
  • lateral and opposite conductive semiconductor regions of silicon or silicon germanium which are suitably doped for the charge carrier injection into the amplification region and provided with electrically conductive contacts for applying an operating voltage suitable for the charge carrier injection.
  • the semiconductor laser diode it is possible to exploit defect-based luminescence of silicon or silicon germanium to form a semiconductor laser to stimulated emission with greater light intensity.
  • a lateral charge carrier injection caused by the laser structure into the amplification area during operation of the diode and, on the other hand, the second mirror layer embedded in the substrate contribute to this.
  • Embodiments of the semiconductor laser diode according to the invention will be described below. The additional features of the embodiments may be combined to form further embodiments of the semiconductor laser diode of the invention, unless explicitly described as alternatives.
  • the structural defects used for optical amplification of the light in the gain region of the semiconductor laser diode may be different in alternative embodiments. In one embodiment, these are dislocations in the silicon crystal lattice. In another, alternative embodiment, the structural defects are so-called rod-shaped defects (rod like defects). This type of defect is known to have radiant transitions between electronic states that occur at - A -
  • the structural defects that interact with oxygen precipitates are the structural defects that interact with oxygen precipitates. Also, oxygen precipitates in silicon lead to a light emission, which manifests itself in an emission band which has a maximum at 0.8 eV at a temperature of 80 K.
  • the structural defects are the structural defects responsible for one of the known D-band emissions in silicon.
  • the exact nature of these defects is still under discussion in the professional world.
  • the D-band luminescence shows, in particular, narrow and light-intensive luminescence peaks, which are denoted by D1 to D4 and can each also occur alone or in groups with different intensities. Details on this are described in WO 2006/1 17 389 A1. It has been shown that with the laser structure according to the invention, said defect structures can be excited to stimulated emission, whereby a laser activity in the spectral range is achieved, which is particularly interesting for optoelectronic applications.
  • optical wavelength optical fibers known to have a minimum of their attenuation so that a light transmission over long distances is possible. So far, however, no semiconductor lasers that can be integrated into advanced silicon technology have come to market maturity.
  • the gain region of the semiconductor laser diode is in the shape of a cylinder.
  • the two oppositely conductive semiconductor regions are realized as follows: A first semiconductor region of these oppositely conductive semiconductor regions is likewise cylindrical, but with a smaller radius than the amplification region. This cylindrical first semiconductor region is arranged in the cylinder of the amplification region. It extends from the surface-side center of the reinforcing region in the direction of direction of the substrate interior. The extension extends at least along a portion of the central axis of the cylinder formed by the reinforcing region.
  • the mirror layers can either be designed as a Bragg reflector structure.
  • the first or second mirror layer may also be a silicon layer containing oxygen precipitates.
  • the silicon substrate is designed as a silicon-on-insulator (SOI) substrate to increase the charge carrier confinement, that is to say to reduce the range of motion of the charge carriers to a region that is possibly limited to the gain region.
  • SOI substrate has a silicon layer containing the gain region toward the surface and a buried insulator layer adjacent to the substrate interior adjacent to the gain region.
  • the buried second mirror layer is arranged in a silicon layer adjoining the insulator layer to the substrate interior.
  • Embodiments of the semiconductor laser diode according to the invention are also described in the dependent claims.
  • Figure 1 is a schematic cross-sectional view of a first embodiment of a laser diode according to the invention
  • Figure 2 is a schematic plan view of the laser diode of Figure 1;
  • Figure 3 is a schematic cross-sectional view of a second embodiment of a laser diode according to the invention.
  • FIG. 1 shows a schematic cross-sectional view of a first exemplary embodiment of a laser diode 100.
  • the laser diode 100 is shown in FIG. 1 in a detail which does not cover the entire width and depth of the component.
  • the laser diode 100 has a silicon substrate 102, which is manufactured according to one of the production methods for crystalline (bulk) silicon customary in semiconductor technology. By subsequent processing of the substrate, a volume with dislocations, rod-like defects, oxygen precipitates or the like has developed in an amplification area 104.
  • the defects can be generated locally with well-known techniques such as ion implantation and / or thermal treatment.
  • the gain region 104 is viewed in the vertical direction, which is shown in FIG. 1 as a z-direction, in a laser cavity 106 which is delimited by two mirror layers 108 and 110.
  • the mirror layer 108 is formed on the surface of the silicon substrate 102.
  • the mirror layer 110 is embedded in the substrate at a distance from the reinforcing region.
  • the extension of the laser cavity 106 in the vertical direction is selected according to a desired emission wavelength of the laser light to be imitated.
  • a high efficiency of the laser diode is achieved if the expansion of the laser cavity in ensures a resonance peak in the spectral range of the maximum gain of the gain region 104. This can be considered according to the used amplification mechanism in the design of the laser diode accordingly.
  • the mirror layers 108 and 110 in the present embodiment are Bragg reflectors.
  • the p-type gain region is in the lateral direction, which is also referred to as x-direction in FIG. 1, between an n-conductive region 12 and a p-conductive region 1 14 arranged.
  • the reinforcing region 104 is approximately cylindrical. In its center extends along the cylinder axis, the likewise cylindrical n-type conductive region 1 12, the depth extent and radius, however, are smaller than that of the gain region 104.
  • the reinforcing region 104 is annular in the lateral direction of the p-conductive substrate region 1 14 surrounded. Also, the substrate region 116 disposed between the gain region 104 and the buried mirror layer 110, which forms part of the laser cavity 106, is p-doped.
  • the n-conductive region 112 is provided with a metal contact 118, which can be supplied via a feed line 120 with an operating voltage. Also, the p-conductive region 1 14, 1 16 is contacted by means of an annular contact structure 122, which can be supplied by means of a supply line 124 with voltage.
  • An insulator region 126 separates the contact 122 from the lead 120.
  • the insulator layer 126 also extends outside the annular contact structure on the surface of the semiconductor laser diode 100 as seen in the plan view of FIG.
  • Figures 3 and 4 show alternative embodiments of semiconductor laser diodes which differ from the semiconductor laser diode 100 of Figures 1 and 2 in that an SOI substrate is used as the substrate.
  • FIGS. 3 and 4 reference numerals corresponding to those of FIG. 1 are used. Only differing from the embodiment of Figure 1 structural elements are provided with new reference numerals. Modified, but in their function relevant elements of the laser diode of Fig. 1 corresponding structural elements are indicated by a high line.
  • the semiconductor laser diode 300 of FIG. 3 differs from the semiconductor laser diode 100 in that a buried oxide layer 130 is arranged in a depth region adjoining the lower edge of the gain region 104. Between the lower edge of the buried oxide layer 130 and the trenched mirror layer 110 is the correspondingly reduced in thickness p-type silicon region 1 16th
  • the laser diode 400 of FIG. 4 differs from the laser diode 300 of FIG. 3 in that the buried oxide layer directly adjoins the n-conductive region 112 in the depth direction.
  • Both alternative laser diodes 300 and 400 which are based on an SOI substrate, have the advantage during operation of the laser diode that the range of motion of the charge carriers injected into the amplification area by the applied operating voltage is reduced in the depth direction, so that no charge carriers can diffuse into the substrate region 16 , This increases the efficiency of the laser diode in comparison with the embodiment of Figure 1.
  • the buried oxide layer (it is also possible to use an insulator material other than silicon dioxide) itself is used as a mirror layer, so that the formation of a separate, separate mirror layer in the substrate can be dispensed with. This additionally simplifies the structure.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne une diode laser semi-conductrice de type VCSEL avec un substrat de silicium, une cavité laser en silicium ou en silicium-germanium qui s'étend d'une surface principale du substrat de silicium vers l'intérieur du substrat et comprend comme surfaces extrêmes de résonateur une première couche miroir sur la surface du substrat prévue pour l'émission de lumière et une deuxième couche miroir enterrée dans le substrat de silicium ; une zone de renforcement disposée dans la cavité laser en silicium cristallin ou en silicium-germanium qui contient des défauts structurels du réseau cristallin et une pluralité de systèmes multi-niveaux électroniques localisés sur ce dernier qui peuvent être excités chacun par injection de porteurs de charge de densité de porteurs de charge appropriée dans la zone active, pour l'émission spontanée de lumière et globalement à un état d'inversion de distribution approprié pour le renforcement de la lumière par émission stimulée ; et avec des faces opposées l'une à l'autre latéralement à la zone de renforcement et des zones semi-conductrices conductrices dans le sens opposé en silicium ou en silicium-germanium qui sont dopées pour l'injection de porteurs de charge dans la zone de renforcement et comportent des contacts électriquement conducteurs pour appliquer une tension d'activation appropriée pour l'injection de porteurs de charge.
PCT/EP2008/057801 2007-06-29 2008-06-19 Structure laser au silicium basée sur les défauts Ceased WO2009003848A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007031132.1 2007-06-29
DE102007031132A DE102007031132B4 (de) 2007-06-29 2007-06-29 Defektbasierte Silizium-Laserstruktur

Publications (1)

Publication Number Publication Date
WO2009003848A1 true WO2009003848A1 (fr) 2009-01-08

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PCT/EP2008/057801 Ceased WO2009003848A1 (fr) 2007-06-29 2008-06-19 Structure laser au silicium basée sur les défauts

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DE (1) DE102007031132B4 (fr)
WO (1) WO2009003848A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011377B2 (en) 2019-04-04 2021-05-18 International Business Machines Corporation Method for fabricating a semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829534A (en) * 1985-01-08 1989-05-09 Canon Kabushiki Kaisha Semiconductor laser device having a semiconductor region for creating a depletion layer in a laser active layer for controlling current flow therethrough
DE4342527A1 (de) * 1993-12-15 1995-06-22 Forschungszentrum Juelich Gmbh Verfahren zum elektrischen Kontaktieren von porösem Silizium
US6023076A (en) * 1996-08-22 2000-02-08 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light emitting device having a current path between electrodes
DE10000707A1 (de) * 2000-01-10 2001-07-12 Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh Herstellungsverfahren für leuchtende Strukturen auf Siliziumsubstrat
US20020048289A1 (en) * 2000-08-08 2002-04-25 Atanackovic Petar B. Devices with optical gain in silicon
WO2005119859A1 (fr) * 2004-05-28 2005-12-15 Brown University Laser a semi-conducteurs a bande interdite indirecte et procede de fabrication correspondant
WO2006117389A1 (fr) * 2005-05-03 2006-11-09 Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik Emetteur de lumiere base sur une dislocation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004042997B4 (de) * 2004-05-14 2006-04-06 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Silizium-basierter Lichtemitter
US7596158B2 (en) * 2005-10-28 2009-09-29 Massachusetts Institute Of Technology Method and structure of germanium laser on silicon

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829534A (en) * 1985-01-08 1989-05-09 Canon Kabushiki Kaisha Semiconductor laser device having a semiconductor region for creating a depletion layer in a laser active layer for controlling current flow therethrough
DE4342527A1 (de) * 1993-12-15 1995-06-22 Forschungszentrum Juelich Gmbh Verfahren zum elektrischen Kontaktieren von porösem Silizium
US6023076A (en) * 1996-08-22 2000-02-08 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light emitting device having a current path between electrodes
DE10000707A1 (de) * 2000-01-10 2001-07-12 Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh Herstellungsverfahren für leuchtende Strukturen auf Siliziumsubstrat
WO2001052331A1 (fr) * 2000-01-10 2001-07-19 RUBITEC Gesellschaft für Innovation und Technologie der Ruhr-Universität Bochum mbH Procede de fabrication de structures luminescentes sur substrats de silicium
US20020048289A1 (en) * 2000-08-08 2002-04-25 Atanackovic Petar B. Devices with optical gain in silicon
WO2005119859A1 (fr) * 2004-05-28 2005-12-15 Brown University Laser a semi-conducteurs a bande interdite indirecte et procede de fabrication correspondant
WO2006117389A1 (fr) * 2005-05-03 2006-11-09 Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik Emetteur de lumiere base sur une dislocation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SEKIGUCHI T ET AL: "Cathodoluminescence study on the tilt and twist boundaries in bonded silicon wafers", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 91-92, 30 April 2002 (2002-04-30), pages 244 - 247, XP004355536, ISSN: 0921-5107 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011377B2 (en) 2019-04-04 2021-05-18 International Business Machines Corporation Method for fabricating a semiconductor device

Also Published As

Publication number Publication date
DE102007031132A1 (de) 2009-01-02
DE102007031132B4 (de) 2010-09-16

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