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WO2005119859A1 - Laser a semi-conducteurs a bande interdite indirecte et procede de fabrication correspondant - Google Patents

Laser a semi-conducteurs a bande interdite indirecte et procede de fabrication correspondant Download PDF

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Publication number
WO2005119859A1
WO2005119859A1 PCT/US2004/017225 US2004017225W WO2005119859A1 WO 2005119859 A1 WO2005119859 A1 WO 2005119859A1 US 2004017225 W US2004017225 W US 2004017225W WO 2005119859 A1 WO2005119859 A1 WO 2005119859A1
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Prior art keywords
layer
silicon
solid state
optical emitter
patterned
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Sylvain Cloutier
Jimmy Xu
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Brown University
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Brown University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si

Definitions

  • This invention relates generally to solid state optical emitter devices and, more specifically, relates to a silicon-based optical emitter device and, even more specifically, relates to a silicon-based laser device and to a method to manufacture a silicon-based laser device.
  • Porous silicon is one well-known example of this prior research, wherein a large surface-to-volume ratio and/or highly emissive surface states are created by severe chemical impregnation and material modification of the surface layer (see M.P.Stewart, J.M.Buriak, Jour, of the Am. Chem. Soc. 123, 7821 (2001); A.G.Cullis, L.T.Canham, Nature 353, 335 (1991); A.G.Cullis, L.T.Canham, P.D.J.Calcott, Jour, of Appl. Phys.
  • the emission due to nano-scale quantum confinement and related techniques, such as porous silicon materials, can be characterized by its sub-bandgap emission.
  • optical gain enhancement has been achieved to varying degrees in these prior efforts, and in silicon nano-particles, no lasing action has been observed. This is not unexpected, however, given that in these systems an increase in optical gain is likely to be more than offset by an even greater increase in internal absorption and scattering by the random features.
  • this invention provides a solid state optical emitter device having an active region comprised of a layer of semiconductor material.
  • the layer is patterned and emits, when pumped, an optical signal having a plurality of characteristics that are consistent with a laser emission.
  • the layer is patterned so as to increase a surface-to-volume ratio and a concentration of bound excitons in the layer to create a spatially confined exciton population that enhances recombination proportionally to nano-patterning-induced surface enhancement.
  • the plurality of characteristics that are consistent with a laser emission include threshold behavior, a linear power evolution, linewidth narrowing and a polarized emission, indirect-bandgap.
  • the layer of semiconductor material may be a direct-bandgap or an indirect-bandgap semiconductor material.
  • the layer of indirect-bandgap semiconductor material is comprised of intrinsic silicon, and the optical signal has a wavelength of about 1280nm.
  • the layer is patterned to have a periodic array of uniform and ordered nano-scale holes, while in another embodiment the layer is patterned to have an array of upstanding nano-scale features, such as posts or pillars.
  • the combination of the feature size with the regularity and uniformity of the feature array cooperate to provide the significant enhancement in optical properties that are observed in an optical emitter constructed using indirect-bandgap semiconductor material
  • the method includes providing a layer comprised of an indirect-bandgap semiconductor material, and patterning the layer so as to increase a surface-to- volume ratio and a concentration of bound excitons in the layer to create a substantially two dimensional confined exciton-liquid that enhances free-exciton recombination.
  • the step of providing includes providing a silicon-on-insulator (SOI) wafer having a silicon epilayer; thinning the silicon epilayer; applying a patterning mask to a top surface of the silicon epilayer; and etching the silicon epilayer through the mask so as to pattern the silicon epilayer.
  • SOI silicon-on-insulator
  • thinning results in a silicon epilayer thickness of less than about 1 OOnm.
  • etching yields an array of throughholes in the silicon epilayer having diameters of the order of tens of nanometers, while in another embodiment etching yields an array of upstanding features having diameters of tens of nanometers.
  • a patterning mask applies a mask fabricated by a nano-scale self assembly process, such as a mask fabricated by an anodic aluminum oxide (AAO) fabrication process.
  • AAO anodic aluminum oxide
  • a solid state optical emitter having an active region comprised of a layer comprised of an indirect-bandgap semiconductor material.
  • the layer is patterned to have nano-scale features and emits an optical signal characterized by an amplified spontaneous emission (ASE) spectrum, and further characterized by having an emission peak within the ASE spectrum that has a plurality of characteristics that are consistent with a laser emission.
  • ASE amplified spontaneous emission
  • the ASE spectrum is characterized by wavelengths in the range of about 1240nm to about 1290nm, and the emission peak is centered at about 1280nm.
  • a device capable of generating laser action at a wavelength of about 1280nm in a periodic nano-patterned Si superstructure formed in a crystalline silicon-on-insulator wafer. Threshold behavior, linear power-evolution, linewidth narrowing and polarized emission, indicative of the occurrence of laser action, are observed at temperatures below 40K, demonstrating that under controlled and uniform nano-scale modification of silicon, the optical gain can be made sufficiently large, and the material losses made sufficiently small, so as to enable lasing to occur.
  • Figs. 1 A- 1 D collectively referred to as Fig. 1 , illustrate a nano-patterned silicon epilayer of a SOI substrate, a fabrication mask and spectral emission;
  • Fig. 2 is a graph that depicts the evolution of a 1279nm lasing-peak intensity as a function of the incident pump power density at 40, 30, 15 and 10K;
  • Fig. 3 is a graph that shows the emission spectra through a broadband high-extinction polarizer with its polarization axis set parallel and pe ⁇ endicular with respect to the surface of the sample;
  • Figs. 4A-4D collectively referred to as Fig. 4, illustrate the edge emission of the nano- patterned and unpatterned (reference) SOI samples
  • Fig. 5 shows a process for fabricating the nano-patterned SOI sample, in accordance with one embodiment of this invention
  • Figs. 6A and 6B collectively referred to as Fig. 6, illustrate a silicon nano-pillar array, and a silicon nano-dot array, respectively, in accordance with further embodiments of this invention
  • Figs. 7A, 7B and 7C collectively referred to as Fig. 7, illustrate electrically pumped nano-patterned Si laser device embodiments further in accordance with this invention.
  • Figs. 8A and 8B collectively referred to as Fig. 8, illustrate embodiments of doped, nano-patterned silicon optical emitters.
  • Fig. 1 illustrates an embodiment of a nano-patterned silicon layer that sits atop a SOI substrate and a resulting spectral emission. More specifically, Fig. 1A illustrates a 45-degree elevational enlarged (scanning-electron microscope (SEM)) view of a nano-patterned silicon-on-insulator sample 10.
  • SEM scanning-electron microscope
  • samples used exhibited a 60nm-thick layer of silicon ⁇ 100> atop a 3 ⁇ m thick layer of silicon-oxide on a silicon substrate (a SOI substrate or wafer).
  • the 60nm-thick Si layer 10A was processed to form a regular array of through-holes, also referred to as pores 12.
  • Fig. IB is a SEM top-view of an anodic aluminum oxide (AAO) highly ordered nano-pore array mask 20 used to pattern the Si layer 10A shown in Fig. 1 A.
  • ASE amplified spontaneous emission
  • the all-silicon mesoscopic structure of the sample 10 was formed, in this embodiment, by etching a highly ordered array of nano-scale sized holes (also referred to herein as nano anti-dots and as nano-pores, or simply as the pores 12) into the crystalline, device grade Si epilayer 10 of the SOI wafer.
  • the resulting nano- scale patterned Si layer 10A may be referred to as a superlattice.
  • nano-scale features are assumed to be features having sub- micrometer dimensions, such as diameters, thicknesses and/or spacings.
  • a commercial grade SOI wafer 50 as originally obtained had a 205nm-thick silicon ⁇ 100> layer 52 atop a 3 ⁇ m substantially non-electrically conductive dielectric (oxide) layer 54 on a silicon ⁇ 100> substrate 54.
  • the silicon ⁇ 100> layer 52 is one that may be referred to as intrinsic, and in this embodiment is not intentionally doped.
  • the top silicon layer 52 was thermal-oxidized and then thinned to less than, for example, lOOnm via wet-etching of the resulting oxide layer in a 1 :6 HF:H 2 O solution.
  • the final thickness of the thinned top silicon layer 52A was measured using a Dektak-3 profilometer to be, in this non-limiting example, 60nm.
  • An un-patterned piece of the thinned SOI sample 40 was set aside and used for emission reference and comparison, as discussed below in reference to Figs. 4B, 4C and 4D.
  • a 10 mm by 1.5 mm portion of the patterned region was cleaved for performing the edge-emission measurements.
  • the AAO etch mask 20 was fabricated in a two-step anodization process in which uniform nano-pores form and self-organize into a highly-ordered hexagonal array.
  • the pore diameter and spacing can be controllably changed by varying the anodization conditions.
  • Reference in this regard can be made to J.Liang, H.Chik, A.Yin, J.Xu, Jour.of Appl. Phys. 91, 2544 (2002), to A.P.Li, F.M ⁇ ller, A.Birner, K.Nielsch, U.G ⁇ sele, Jour, of Appl.
  • the AAO membrane was grown to 700nm thick, and was subsequently placed on top of the 60nm-thick silicon layer 52A of the SOI substrate while immersed in water (Fig. 5C).
  • the nano-pore array pattern was then transferred into the 60nm-thick silicon layer 52A using a chlorine-based reactive-ion etching (RIE) process.
  • RIE reactive-ion etching
  • the AAO is an effective mask in the RIE process and permits the formation of clean, deep and straight nano-holes into the silicon layer 52A.
  • the AAO mask 20 is removed, yielding the micro- patterned Si sample 10 as shown in Fig. 1A.
  • the pores 12 are made completely through the thinned Si layer 52A, and the underlying oxide layer 54 functions as an etch stop.
  • An annealing and/or planarization process may also be performed to reduce any resulting surface roughness, thereby also reducing scattering losses.
  • One suitable and non-limiting process for reducing surface roughness is ICP etching, a method of high aspect ratio material removal by plasma etching using an inductively-coupled RF source.
  • Another suitable and non-limiting process for reducing surface roughness is a post-etch anneal in a H-N gas mixture (at about a 5/95 ratio) at elevated temperatures.
  • Post-processing such as by using thermal oxidation and HF etching, can also be used to further thin the Si layer 10 and/or to widen the diameter of the pores 12, thereby permitting post-fabrication structural modifications.
  • a continuous- wave (CW) 514.5nm Argon-laser beam 30 was focused onto a 200 ⁇ m-diameter spot on the top-surface of the micro-patterned silicon sample 10 close to an edge, and the edge-emission 35 was collected.
  • CW continuous- wave
  • the sample 10 was placed in a cryostat and cooled to temperatures below 77K. The edge-emission 35 of the sample 10 was collected through an optical window of the cryostat and focused on a 2mm- wide monochromator entrance-slit for spectral measurements.
  • a broad ASE spectrum spanning from about 1240nm to about 1290nm was measured from the sample 10.
  • a spectral peak emerged at about 1279nm. This spectral peak was found to grow in intensity while narrowing in width, from approximately 2.3nm to approximately 1.5nm, with decreasing temperature, a classic spectral behavior of lasing action.
  • the apparent linewidth of the lasing peak at 1 OK was measured to be approximately 1.5nm, with a more precise measurement of its likely smaller actual value being limited by the monochromator's entrance-slit opening (2mm in this case).
  • the continuous temperature-evolution of the emission spectrum shown in Fig. 1 D provides further details of the spectral behavior.
  • Fig. 2 shows the evolution of the 1279nm lasing-peak intensity as a function of the incident pump power-density at 40K, 3 OK, 15K and 1 OK.
  • a linear power-evolution with a low-power threshold can be clearly observed, along with a decreasing threshold and an increasing slope with decreasing temperature.
  • Fig. 3 shows the emission spectra through a broadband high-extinction polarizer with its polarization axis set parallel and pe ⁇ endicular with respect to the surface of the sample 10. sample's surface.
  • the results show that the 1279nm laser-peak emission is strongly polarized parallel to the axis of the pores 12 (pe ⁇ endicular to the surface silicon film), whereas the ASE background shows a very weak degree-of-polarization (DOP).
  • the inset in Fig. 3 plots the normalized lasing-peak intensity as a function of the axis orientation of the polarizer.
  • Fig. 4 A demonstrates that cooling the patterned silicon sample 10 to about 10K further increases the FE recombination-peak intensity by two orders of magnitude.
  • a strong emission enhancement in the nano-patterned sample 10 remains over a large range of pumping power at this temperature, as shown in Fig. 4B.
  • well-known features in the emission spectral band extending from 1080nm to 1220nm are observed in the edge-emission from both the nano-patterned sample 10 and from the un-patterned reference sample 40, as shown in Fig. 4C.
  • the long- wavelength emission band may be attributed to an increased concentration of bound excitons, and to their nucleation around the surface of the nano holes (the pores 12), thereby effectively creating a two dimensional (2D) confined exciton-liquid and increasing the FE recombination proportionally to the significantly increased surface-to-volume ratio (see Y.Pokrovskii, Phys. Stat. Sol. (a) 11, 385 (1972); N.Drozdov, A.Fedotov, Jour, of Phys.
  • the uniformity of the nano-hole array aids in condensing the bound exciton transitions to a narrow spectral range, thereby contributing to an increase in the peak gain, while maintaining the scattering loss at a minimum.
  • a "photonic bandgap" feedback mechanism is an unlikely source of the observed emission that is consistent with laser action, as it can be shown that the period of the required nano-patterned array would be considerably larger than actually present in such a thin silicon film with an approximately 70% fill factor.
  • the strong polarization shown in Fig. 3 is not only a test of coherence, but is also indicative of a possibly significant role of coherent-backscattering feedback caused by the vertically oriented pores 12, which provides a much longer path-length of lasing oscillation (parallel to the axes of the pores 12), than the ASE-background emission.
  • the teachings of this invention can also be extended to electrically pumped laser embodiments.
  • the surface of the silicon sample 10 can be nano-patterned using, instead of holes, a pedestal or pillar-type of pattern.
  • Figs. 6A and 6B illustrate a silicon nano-pillar array 60 of 30nm diameter, and an upstanding silicon nano-dot array 62, respectively, in accordance with further embodiments of this invention.
  • Figs. 7 A, 7B and 7C illustrate electrically pumped nano-patterned Si laser device embodiments 70, 80 and 90, respectively, in accordance with further embodiments of this invention.
  • Fig. 7A shows a vertical current injection Si laser device 70 embodiment, wherein a Si active layer 72, that is nano-patterned in accordance with the embodiments of Figs. 1 or 6, is disposed between an n-type substrate 74 and a p-type cladding layer 76 (note that the n and p conductivity types could be reversed). Electrodes 74A and 76A are used to couple the vertical current injection Si laser device 70 to a source of electrical current. Thin oxide layers 75A and 75B are disposed between the Si active layer 72 and p-type cladding layer 76 and the n-type substrate 74.
  • the top cladding layer 76 preferably has a larger bandgap than the silicon-based (or Si-Ge based) gain layer 72.
  • An epitaxial regrowth process may be preferred to create the p-type cladding layer 76.
  • Fig. 7B shows a lateral current injection Si laser device 80 embodiment, wherein a Si active layer 82, that is nano-patterned in accordance with the embodiments of Figs. 1 or 6, is disposed laterally between an n-type layer 84 and a p-type layer 86, all of which are disposed on a semi-insulating substrate 88.
  • the electrodes 84A and 86A are used to couple the lateral current injection Si laser device 80 to a source of electrical current.
  • An epitaxial regrowth process may be preferred to create an intrinsic cladding layer 82A that lies above the Si active layer 82.
  • the layer 72/82 can be intrinsic (or undoped) assuming that layers 76/86 and 74/84 are respectively p-doped and n-doped.
  • the substrate 100A is conductive, while in the embodiment of Fig.
  • Figs. 8 A and 8B having the top-surface electrodes 86A, 86B the substrate 100B is insulating.
  • the patterned (active) layer(s) are doped indirect-bandgap semiconductor material.
  • Figs. 8 A and 8B show that it is possible to pattern doped silicon and use it as an active region for electrical pumping.
  • Fig. 7C shows the lateral current injection Si laser device 80 embodiment of Fig. 7B integrated with a MOSFET 90.
  • the MOSFET 90 includes a FET gate electrode 92 disposed over a layer of gate oxide 94 between the n-type laser injection layer 84 and another n-type layer 96. Control of the gate voltage results in turning on and off the current flow through the MOSFET 90, and thus the turning on and off the current injection into the lateral current injection Si laser device 80.
  • This embodiment can thus be particularly useful for modulating the emitted light for optical communication and other applications.
  • the modulated (on/off or otherwise modulated) optical emission at about 1280nm can be coupled into an optical fiber and transmitted to a remotely located optical receiver.
  • the modulated optical emission at about 1280nm can be coupled into an on-chip optical conduit, such as a waveguide, and transmitted to an on-chip optical receiver.
  • this embodiment of the invention is particularly attractive as it enables the integration of silicon-based photonics, including a silicon-based optical emitter, with silicon-based microelectronics in and on a common silicon substrate.
  • the embodiments of Figs. 7A, 7B and 7C are also edge emitting devices, in the same manner as the optically-pumped embodiment shown in Fig. lC. Note further that due to the minimal abso ⁇ tion by the silicon of the emitted wavelengths, that abso ⁇ tive self-heating of the laser devices is small.
  • this invention can also be applied to vertical emission devices.
  • the construction shown in Fig. 7A could be fabricated to be a vertical emission device, where layer 72 would be p-doped, and where 76/76A would be a transparent electrode, such as a film of indium-tin-oxide (ITO).
  • ITO indium-tin-oxide
  • the pore diameter and the pore spacing can be controllably changed, i.e., the self-assembly characteristics of the AAO can be controlled, by varying the anodization conditions and/or by altering the self-adhesion to silicon, as is known in the art.
  • the mask 20 may be fabricated using different self-assembling materials (bottom-up techniques), or the mask 20 may be fabricated in metal or some other suitable material using a photolithographic process (including e-beam lithography), or by direct laser writing and patterning of a suitable mask material (top-down techniques).
  • the use of this invention is not restricted to cryogenic temperatures, as improvements in material processing and other developments are expected to further reduce optical losses, and thus increase the operating temperature at which lasing occurs.
  • another medium may be provided in the gap spaces (e.g., within the nano-pores 12) to at least one of increase the gain, or reduce scattering losses, or provide index matching.
  • the nano- patterned silicon can also be sandwiched in the gain medium if it has a lower index of refraction (although this would be less efficient but could still enhance the emission).
  • suitable materials that can be employed to one or more of increase the gain, reduce the scattering loss, provide index matching, tunability or other functionality include, but are not limited to, polymer-dye systems (such as fluorescent dyes, azobenzene-dyes and laser-dyes), liquid crystals (tunability), polymer-liquid crystal systems, Polymer-Dispersed Liquid Crystals (PDLCs), Rare-Earth-doped glass (e.g., Erbium-doped glass, or Thulium-doped glass), chalcogenides glasses (for nonlinear- optical properties and/or tunability), non-linear crystals (for example, KDP, BBO) for harmonic generation or frequency conversion, and other semiconductor materials (for quantum-dot or heterostructures).
  • polymer-dye systems such as fluorescent dyes, azobenzene-dyes and laser-dyes
  • liquid crystals such as fluorescent dyes, azobenzene-dyes and laser-dyes
  • liquid crystals such as fluorescent dyes,
  • indirect-bandgap semiconductor material While described above primarily in the context of silicon as the indirect-bandgap semiconductor material, this invention can be used to advantage with other indirect- bandgap semiconductor materials, such as germanium, and with alloys of indirect- bandgap materials, such as Si-Ge alloys.
  • teachings of this invention can also be employed with direct-bandgap materials, such as Group III-V materials, to enhance their light output.
  • the use of the silicon epilayer of a SOI wafer is not a limitation upon the practice of this invention, but was described as a convenient source of high-quality silicon within which to fabricate the laser device in accordance with this invention.
  • a silicon layer may be formed by suitable epitaxial deposition processes, and used to fabricate the edge emitting or vertical emitting laser embodiments in accordance with this invention.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Un émetteur optique à semi-conducteurs possède une région active ayant une couche d'une matière semi-conductrice à bande interdite indirecte. Cette couche est structurée de manière à présenter des caractéristiques de nanoéchelle et elle émet un signal optique caractérisé par un spectre d'émission spontané amplifié (ASE), et elle se caractérise en outre en ce qu'elle possède un pic d'émission au sein du spectre ASE ayant une pluralité de caractéristiques qui sont cohérentes avec une émission laser. Dans un mode de réalisation, le spectre ASE est caractérisé par des longueurs d'onde dans la plage allant d'environ 1 240 nm à environ 1 290 nm, et le pic d'émission est centré à environ 1 280 nm.
PCT/US2004/017225 2004-05-28 2004-05-28 Laser a semi-conducteurs a bande interdite indirecte et procede de fabrication correspondant Ceased WO2005119859A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009003848A1 (fr) * 2007-06-29 2009-01-08 Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik Structure laser au silicium basée sur les défauts

Citations (2)

* Cited by examiner, † Cited by third party
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