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WO2009001935A1 - 薄膜形成方法、有機エレクトロルミネッセンス素子の製造方法、半導体素子の製造方法及び光学素子の製造方法 - Google Patents

薄膜形成方法、有機エレクトロルミネッセンス素子の製造方法、半導体素子の製造方法及び光学素子の製造方法 Download PDF

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Publication number
WO2009001935A1
WO2009001935A1 PCT/JP2008/061756 JP2008061756W WO2009001935A1 WO 2009001935 A1 WO2009001935 A1 WO 2009001935A1 JP 2008061756 W JP2008061756 W JP 2008061756W WO 2009001935 A1 WO2009001935 A1 WO 2009001935A1
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WO
WIPO (PCT)
Prior art keywords
manufacturing
thin film
forming
substrate
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/061756
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English (en)
French (fr)
Inventor
Norihito Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to EP08777668.8A priority Critical patent/EP2175694A4/en
Priority to CN200880104014A priority patent/CN101785363A/zh
Priority to US12/666,950 priority patent/US20100227477A1/en
Publication of WO2009001935A1 publication Critical patent/WO2009001935A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　塗布法により液状材料を用いて、低コストで且つ簡便に基板上の所定の領域に薄膜をパターン形成する方法及びこの方法を用いた有機エレクトロルミネッセンス素子、半導体素子及び光学素子の製造方法を提供する。 　薄膜形成材料を含む液状材料１６ａを基板１１上に塗布して所定領域に薄膜を形成する方法であって、基板１１を撥液処理して基板１１に撥液性表面Ａを形成する工程と、基板１１の撥液性表面Ａに、この面よりも液状材料１６ａに対して親液性を有する下地層１５をパターン形成する工程と、下地層１５上に液状材料１６ａを塗布し、乾燥させる工程と、を有する。
PCT/JP2008/061756 2007-06-28 2008-06-27 薄膜形成方法、有機エレクトロルミネッセンス素子の製造方法、半導体素子の製造方法及び光学素子の製造方法 Ceased WO2009001935A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08777668.8A EP2175694A4 (en) 2007-06-28 2008-06-27 PROCESS FOR PREPARING A THIN FILM, METHOD FOR PRODUCING AN ORGANIC ELECTROLUMINESCENE COMPOSITE, METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTICAL COMPONENT
CN200880104014A CN101785363A (zh) 2007-06-28 2008-06-27 薄膜的形成方法、有机电致发光元件的制造方法、半导体元件的制造方法及光学元件的制造方法
US12/666,950 US20100227477A1 (en) 2007-06-28 2008-06-27 Method for forming thin film, method for producing organic electroluminescent device, method for producing semiconductor device, and method for producing optical device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007170487A JP5343330B2 (ja) 2007-06-28 2007-06-28 薄膜形成方法、有機エレクトロルミネッセンス素子の製造方法、半導体素子の製造方法及び光学素子の製造方法
JP2007-170487 2007-06-28

Publications (1)

Publication Number Publication Date
WO2009001935A1 true WO2009001935A1 (ja) 2008-12-31

Family

ID=40185744

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061756 Ceased WO2009001935A1 (ja) 2007-06-28 2008-06-27 薄膜形成方法、有機エレクトロルミネッセンス素子の製造方法、半導体素子の製造方法及び光学素子の製造方法

Country Status (7)

Country Link
US (1) US20100227477A1 (ja)
EP (1) EP2175694A4 (ja)
JP (1) JP5343330B2 (ja)
KR (1) KR20100038210A (ja)
CN (1) CN101785363A (ja)
TW (1) TWI441257B (ja)
WO (1) WO2009001935A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138106A (ja) * 2013-01-17 2014-07-28 Yamagata Univ 電子デバイス及びその製造方法

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WO2011052582A1 (ja) * 2009-10-29 2011-05-05 住友化学株式会社 有機薄膜太陽電池モジュールの製造方法
JP5467246B2 (ja) * 2010-03-24 2014-04-09 学校法人福岡大学 配線パターン形成方法、及び配線基板
WO2013161165A1 (ja) 2012-04-27 2013-10-31 パナソニック株式会社 有機ｅｌ素子、およびそれを備える有機ｅｌパネル、有機ｅｌ発光装置、有機ｅｌ表示装置
CN104218190B (zh) * 2014-08-26 2017-02-15 京东方科技集团股份有限公司 有机电致发光器件及其制造方法、显示装置
JP6529842B2 (ja) * 2015-07-14 2019-06-12 芝浦メカトロニクス株式会社 インプリント用のテンプレート製造装置及びテンプレート製造方法
WO2017205285A1 (en) * 2016-05-23 2017-11-30 Konica Minolta Laboratory U.S.A., Inc. Method of forming transparent correlated metal electrode
FR3063288B1 (fr) * 2017-02-28 2019-03-22 Saint-Gobain Glass France Article pour piece humide comprenant un vitrage hydrophobe
CN108695434B (zh) * 2017-04-07 2021-10-26 元太科技工业股份有限公司 有机薄膜晶体管及其制作方法
WO2019082746A1 (ja) * 2017-10-27 2019-05-02 住友化学株式会社 偏光フィルムの製造方法及び偏光フィルム
JP7102131B2 (ja) * 2017-12-01 2022-07-19 キヤノン株式会社 トップエミッション型の有機ｅｌ素子およびその製造方法
KR102491393B1 (ko) 2017-12-07 2023-01-20 엘지디스플레이 주식회사 전계 발광 표시장치
CN110429197A (zh) * 2018-09-20 2019-11-08 广东聚华印刷显示技术有限公司 薄膜封装结构、薄膜封装方法及显示面板
CN111370439A (zh) 2018-12-07 2020-07-03 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置
CN111799395B (zh) * 2020-07-23 2023-09-19 京东方科技集团股份有限公司 显示面板及其制作方法

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JP2002237383A (ja) * 2000-03-31 2002-08-23 Seiko Epson Corp 有機ｅｌ素子の製造方法、有機ｅｌ素子
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JP2004098351A (ja) * 2002-09-05 2004-04-02 Dainippon Printing Co Ltd パターン形成体
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WO1998012689A1 (en) * 1996-09-19 1998-03-26 Seiko Epson Corporation Matrix type display device and method of production thereof
JP2002237383A (ja) * 2000-03-31 2002-08-23 Seiko Epson Corp 有機ｅｌ素子の製造方法、有機ｅｌ素子
JP2002222695A (ja) 2000-11-27 2002-08-09 Seiko Epson Corp 有機エレクトロルミネッセンス装置の製造方法および有機エレクトロルミネッセンス装置並びに電子機器
JP2003023276A (ja) 2001-07-09 2003-01-24 Matsushita Electric Ind Co Ltd 電子機器の筐体構造
JP2004098351A (ja) * 2002-09-05 2004-04-02 Dainippon Printing Co Ltd パターン形成体
JP2004098350A (ja) * 2002-09-05 2004-04-02 Dainippon Printing Co Ltd 高親水性積層体
JP2006026522A (ja) * 2004-07-15 2006-02-02 Seiko Epson Corp 薄膜パターンの形成方法、デバイスおよびその製造方法

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Title
See also references of EP2175694A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138106A (ja) * 2013-01-17 2014-07-28 Yamagata Univ 電子デバイス及びその製造方法

Also Published As

Publication number Publication date
US20100227477A1 (en) 2010-09-09
TW200910456A (en) 2009-03-01
TWI441257B (zh) 2014-06-11
JP2009009833A (ja) 2009-01-15
EP2175694A4 (en) 2013-09-25
EP2175694A1 (en) 2010-04-14
CN101785363A (zh) 2010-07-21
KR20100038210A (ko) 2010-04-13
JP5343330B2 (ja) 2013-11-13

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