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WO2009006284A3 - Semiconductor die having a redistribution layer - Google Patents

Semiconductor die having a redistribution layer Download PDF

Info

Publication number
WO2009006284A3
WO2009006284A3 PCT/US2008/068542 US2008068542W WO2009006284A3 WO 2009006284 A3 WO2009006284 A3 WO 2009006284A3 US 2008068542 W US2008068542 W US 2008068542W WO 2009006284 A3 WO2009006284 A3 WO 2009006284A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor die
redistribution layer
tape
assembly
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2008/068542
Other languages
French (fr)
Other versions
WO2009006284A2 (en
Inventor
Chien-Ko Liao
Chin-Tien Chiu
Jack Chang Chien
Cheemen Yu
Hem Takiar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/769,937 external-priority patent/US7763980B2/en
Priority claimed from US11/769,927 external-priority patent/US7772047B2/en
Application filed by SanDisk Corp filed Critical SanDisk Corp
Priority to CN2008800224541A priority Critical patent/CN101765911B/en
Priority to EP08796037.3A priority patent/EP2179442A4/en
Publication of WO2009006284A2 publication Critical patent/WO2009006284A2/en
Publication of WO2009006284A3 publication Critical patent/WO2009006284A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10W74/129—
    • H10P72/74—
    • H10P72/7402—
    • H10W20/49—
    • H10W72/019—
    • H10P72/7416—
    • H10P72/7432—
    • H10W70/05—
    • H10W72/01204—
    • H10W72/07251—
    • H10W72/075—
    • H10W72/20—
    • H10W72/29—
    • H10W72/5445—
    • H10W72/932—
    • H10W72/951—
    • H10W74/00—
    • H10W90/24—
    • H10W90/754—

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.
PCT/US2008/068542 2007-06-28 2008-06-27 Semiconductor die having a redistribution layer Ceased WO2009006284A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800224541A CN101765911B (en) 2007-06-28 2008-06-27 Semiconductor chip with redistribution layer
EP08796037.3A EP2179442A4 (en) 2007-06-28 2008-06-27 SEMICONDUCTOR HAVING A REDISTRIBUTION LAYER

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/769,937 2007-06-28
US11/769,937 US7763980B2 (en) 2007-06-28 2007-06-28 Semiconductor die having a distribution layer
US11/769,927 US7772047B2 (en) 2007-06-28 2007-06-28 Method of fabricating a semiconductor die having a redistribution layer
US11/769,927 2007-06-28

Publications (2)

Publication Number Publication Date
WO2009006284A2 WO2009006284A2 (en) 2009-01-08
WO2009006284A3 true WO2009006284A3 (en) 2009-04-09

Family

ID=40226779

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/068542 Ceased WO2009006284A2 (en) 2007-06-28 2008-06-27 Semiconductor die having a redistribution layer

Country Status (5)

Country Link
EP (1) EP2179442A4 (en)
KR (1) KR101475467B1 (en)
CN (1) CN101765911B (en)
TW (1) TWI371807B (en)
WO (1) WO2009006284A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10373870B2 (en) 2010-02-16 2019-08-06 Deca Technologies Inc. Semiconductor device and method of packaging
US9177926B2 (en) 2011-12-30 2015-11-03 Deca Technologies Inc Semiconductor device and method comprising thickened redistribution layers
US9196509B2 (en) 2010-02-16 2015-11-24 Deca Technologies Inc Semiconductor device and method of adaptive patterning for panelized packaging
US9576919B2 (en) 2011-12-30 2017-02-21 Deca Technologies Inc. Semiconductor device and method comprising redistribution layers
US9831170B2 (en) 2011-12-30 2017-11-28 Deca Technologies, Inc. Fully molded miniaturized semiconductor module
US10672624B2 (en) 2011-12-30 2020-06-02 Deca Technologies Inc. Method of making fully molded peripheral package on package device
US9613830B2 (en) 2011-12-30 2017-04-04 Deca Technologies Inc. Fully molded peripheral package on package device
US10050004B2 (en) 2015-11-20 2018-08-14 Deca Technologies Inc. Fully molded peripheral package on package device
AT515443B1 (en) * 2014-02-28 2019-10-15 At & S Austria Tech & Systemtechnik Ag Method for producing a printed circuit board and printed circuit board
WO2015138359A1 (en) * 2014-03-10 2015-09-17 Deca Technologies Inc. Semiconductor device and method comprising thickened redistribution layers
CN106469657B (en) * 2015-08-14 2020-03-31 晟碟半导体（上海）有限公司 Semiconductor device having spacer layer, method of forming the same, and spacer layer tape
US10157803B2 (en) 2016-09-19 2018-12-18 Deca Technologies Inc. Semiconductor device and method of unit specific progressive alignment
US10573601B2 (en) 2016-09-19 2020-02-25 Deca Technologies Inc. Semiconductor device and method of unit specific progressive alignment
US11056453B2 (en) 2019-06-18 2021-07-06 Deca Technologies Usa, Inc. Stackable fully molded semiconductor structure with vertical interconnects
US11728248B2 (en) 2021-07-01 2023-08-15 Deca Technologies Usa, Inc. Fully molded semiconductor structure with through silicon via (TSV) vertical interconnects

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011314A (en) * 1999-02-01 2000-01-04 Hewlett-Packard Company Redistribution layer and under bump material structure for converting periphery conductive pads to an array of solder bumps
US6706557B2 (en) * 2001-09-21 2004-03-16 Micron Technology, Inc. Method of fabricating stacked die configurations utilizing redistribution bond pads
US20040191955A1 (en) * 2002-11-15 2004-09-30 Rajeev Joshi Wafer-level chip scale package and method for fabricating and using the same
US6897096B2 (en) * 2002-08-15 2005-05-24 Micron Technology, Inc. Method of packaging semiconductor dice employing at least one redistribution layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN87107692A (en) * 1986-11-13 1988-05-25 Mt化学公司 Manufacturing method of semiconductor device
US6036809A (en) * 1999-02-16 2000-03-14 International Business Machines Corporation Process for releasing a thin-film structure from a substrate
JP2001323228A (en) * 2000-05-15 2001-11-22 Nitto Denko Corp Heat release adhesive sheet
JP2002076576A (en) * 2000-08-23 2002-03-15 Nec Corp Wiring pattern forming method and original plate used in the method
JP2005085799A (en) * 2003-09-04 2005-03-31 Seiko Epson Corp Film forming method, wiring pattern forming method, semiconductor device manufacturing method, electro-optical device, and electronic apparatus
US7410825B2 (en) * 2005-09-15 2008-08-12 Eastman Kodak Company Metal and electronically conductive polymer transfer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011314A (en) * 1999-02-01 2000-01-04 Hewlett-Packard Company Redistribution layer and under bump material structure for converting periphery conductive pads to an array of solder bumps
US6706557B2 (en) * 2001-09-21 2004-03-16 Micron Technology, Inc. Method of fabricating stacked die configurations utilizing redistribution bond pads
US6897096B2 (en) * 2002-08-15 2005-05-24 Micron Technology, Inc. Method of packaging semiconductor dice employing at least one redistribution layer
US20040191955A1 (en) * 2002-11-15 2004-09-30 Rajeev Joshi Wafer-level chip scale package and method for fabricating and using the same

Also Published As

Publication number Publication date
CN101765911A (en) 2010-06-30
EP2179442A4 (en) 2013-08-07
EP2179442A2 (en) 2010-04-28
CN101765911B (en) 2012-06-27
KR101475467B1 (en) 2014-12-22
KR20100034756A (en) 2010-04-01
WO2009006284A2 (en) 2009-01-08
TWI371807B (en) 2012-09-01
TW200910474A (en) 2009-03-01

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