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WO2009001690A1 - 半導体セラミック粉末、及び半導体セラミック、並びに積層型半導体セラミックコンデンサ - Google Patents

半導体セラミック粉末、及び半導体セラミック、並びに積層型半導体セラミックコンデンサ Download PDF

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Publication number
WO2009001690A1
WO2009001690A1 PCT/JP2008/060847 JP2008060847W WO2009001690A1 WO 2009001690 A1 WO2009001690 A1 WO 2009001690A1 JP 2008060847 W JP2008060847 W JP 2008060847W WO 2009001690 A1 WO2009001690 A1 WO 2009001690A1
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WIPO (PCT)
Prior art keywords
semiconductor ceramic
semiconductor
powder
ceramic
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060847
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English (en)
French (fr)
Inventor
Mitsutoshi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2009520459A priority Critical patent/JP5347961B2/ja
Priority to EP08777208.3A priority patent/EP2159196A4/en
Priority to KR1020097026442A priority patent/KR101134751B1/ko
Priority to CN2008800216691A priority patent/CN101687663B/zh
Publication of WO2009001690A1 publication Critical patent/WO2009001690A1/ja
Priority to US12/644,498 priority patent/US8040658B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Abstract

 本発明は、SrTiO3系粒界絶縁型の半導体セラミックに関する。この半導体セラミックは、ドナー元素が結晶粒子中に固溶されると共に、アクセプタ元素が少なくとも結晶粒界中に存在し、結晶面の(222)面における積分幅が0.500°以下であり、かつ、結晶粒子の平均粉末粒径が1.0μm以下である。これを焼成して半導体セラミックを得る。また、この半導体セラミックを使用して積層型半導体セラミックコンデンサを得る。これにより、結晶粒子の平均磁器粒径が1.0μm以下であっても、5000以上の大きな見掛け比誘電率εrAPPを有し、かつ絶縁性にも優れたSrTiO3系粒界絶縁型の半導体セラミック粉末、及び該半導体セラミック粉末を焼結させた半導体セラミック、並びに該半導体セラミックを使用して薄層化・多層化による大容量を可能にした積層型半導体セラミックコンデンサを実現する。
PCT/JP2008/060847 2007-06-27 2008-06-13 半導体セラミック粉末、及び半導体セラミック、並びに積層型半導体セラミックコンデンサ Ceased WO2009001690A1 (ja)

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JP2009520459A JP5347961B2 (ja) 2007-06-27 2008-06-13 半導体セラミック粉末、及び半導体セラミック、並びに積層型半導体セラミックコンデンサ
EP08777208.3A EP2159196A4 (en) 2007-06-27 2008-06-13 SEMICONDUCTOR CERAMIC POWDER, SEMICONDUCTOR CERAMIC, AND LAMINATED SEMICONDUCTOR CAPACITOR
KR1020097026442A KR101134751B1 (ko) 2007-06-27 2008-06-13 반도체 세라믹 분말, 및 반도체 세라믹, 그리고 적층형 반도체 세라믹 콘덴서
CN2008800216691A CN101687663B (zh) 2007-06-27 2008-06-13 半导体陶瓷粉末、半导体陶瓷及层叠型半导体陶瓷电容器
US12/644,498 US8040658B2 (en) 2007-06-27 2009-12-22 Semiconductor ceramic powder, semiconductor ceramic, and monolithic semiconductor ceramic capacitor

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WO2012176714A1 (ja) * 2011-06-22 2012-12-27 株式会社村田製作所 セラミック粉末、半導体セラミックコンデンサおよびその製造方法
WO2015072277A1 (ja) * 2013-11-18 2015-05-21 株式会社村田製作所 バリスタ機能付き積層型半導体セラミックコンデンサとその製造方法
JP2018190956A (ja) * 2017-05-11 2018-11-29 コリア・アドバンスト・インスティテュート・オブ・サイエンス・アンド・テクノロジー 非強誘電性高誘電体及びその製造方法

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JP5397341B2 (ja) * 2010-07-23 2014-01-22 株式会社村田製作所 バリスタ機能付き積層型半導体セラミックコンデンサ
JP5418993B2 (ja) * 2011-01-05 2014-02-19 株式会社村田製作所 積層型半導体セラミックコンデンサの製造方法、及び積層型半導体セラミックコンデンサ
CN102295457B (zh) * 2011-01-17 2013-04-10 南京工业大学 一种低损耗的Sm2O3-TiO2系微波介质陶瓷及其制备方法
WO2012105436A1 (ja) * 2011-02-03 2012-08-09 株式会社 村田製作所 半導体セラミックとその製造方法、及びバリスタ機能付き積層型半導体セラミックコンデンサとその製造方法
CN103858193B (zh) * 2011-10-20 2016-08-17 株式会社村田制作所 带变阻器功能的层叠型半导体陶瓷电容器及其制造方法
KR101632589B1 (ko) * 2012-08-09 2016-06-22 가부시키가이샤 무라타 세이사쿠쇼 적층 세라믹 콘덴서 및 그 제조방법
KR20140033750A (ko) * 2012-09-10 2014-03-19 삼성전기주식회사 적층 세라믹 전자부품 및 이의 제조방법
US10692653B2 (en) * 2017-10-27 2020-06-23 Yageo Corporation Ceramic sintered body and passive component including the same
KR102585981B1 (ko) * 2018-03-28 2023-10-05 삼성전자주식회사 유전체, 및 이를 포함하는 적층형 커패시터, 및 전자 소자
KR102724898B1 (ko) * 2019-06-14 2024-11-01 삼성전기주식회사 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터
KR102806848B1 (ko) * 2020-10-30 2025-05-14 삼성전기주식회사 적층형 커패시터
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