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WO2009069695A1 - 透明導電膜およびその製造方法 - Google Patents

透明導電膜およびその製造方法 Download PDF

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Publication number
WO2009069695A1
WO2009069695A1 PCT/JP2008/071537 JP2008071537W WO2009069695A1 WO 2009069695 A1 WO2009069695 A1 WO 2009069695A1 JP 2008071537 W JP2008071537 W JP 2008071537W WO 2009069695 A1 WO2009069695 A1 WO 2009069695A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent electroconductive
electroconductive film
transparent
hydrogen
containing carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071537
Other languages
English (en)
French (fr)
Inventor
Takashi Kuchiyama
Kenji Yamamoto
Mitsuru Ichikawa
Kozo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaneka Corp
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007310486A external-priority patent/JP5192792B2/ja
Priority claimed from JP2008078785A external-priority patent/JP5478833B2/ja
Application filed by Kaneka Corp filed Critical Kaneka Corp
Priority to US12/734,667 priority Critical patent/US20100310863A1/en
Priority to EP08855605A priority patent/EP2216791A4/en
Publication of WO2009069695A1 publication Critical patent/WO2009069695A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　高い耐環境変動性と高い光線透過率とを同時に達成可能な透明導電膜とその製造方法を提供する。 　透明導電膜は、透明基板上において１層以上の透明導電性酸化物層と、その上の複数層の水素含有カーボン層を含む透明導電膜であり、透明導電性酸化物層の少なくとも１層は酸化亜鉛を含み、水素含有カーボン層は複数層形成されてよく、その少なくとも１層は屈折率が１．２５～１．８５、１層以上の透明導電性酸化物層が堆積された透明基板の光線透過率をＴ0としかつ複数層の水素含有カーボン層まで堆積された透明基板の光線透過率をＴ1とした場合に波長５５０ｎｍの光に関してＴ1／Ｔ0≧１．０２の関係が成り立つことであることがさらに好ましい透明導電膜となる。
PCT/JP2008/071537 2007-11-30 2008-11-27 透明導電膜およびその製造方法 Ceased WO2009069695A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/734,667 US20100310863A1 (en) 2007-11-30 2008-11-27 Transparent electroconductive film and method for producing the same
EP08855605A EP2216791A4 (en) 2007-11-30 2008-11-27 TRANSPARENT ELECTRO-CONDUCTIVE FILM AND PROCESS FOR PRODUCING THE TRANSPARENT ELECTRO-CONTAINING FILM

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007310486A JP5192792B2 (ja) 2007-11-30 2007-11-30 透明導電膜とその製造方法
JP2007-310486 2007-11-30
JP2008078785A JP5478833B2 (ja) 2008-03-25 2008-03-25 透明導電膜の製造方法ならびにそれにより作製された透明導電膜
JP2008-078785 2008-03-25

Publications (1)

Publication Number Publication Date
WO2009069695A1 true WO2009069695A1 (ja) 2009-06-04

Family

ID=40678587

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071537 Ceased WO2009069695A1 (ja) 2007-11-30 2008-11-27 透明導電膜およびその製造方法

Country Status (3)

Country Link
US (1) US20100310863A1 (ja)
EP (1) EP2216791A4 (ja)
WO (1) WO2009069695A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193675A (ja) * 2008-02-12 2009-08-27 Kaneka Corp 透明導電膜
JP2009193673A (ja) * 2008-02-12 2009-08-27 Kaneka Corp 透明導電膜の製造方法
JP2011003848A (ja) * 2009-06-22 2011-01-06 Kaneka Corp 結晶シリコン系太陽電池
US20120200928A1 (en) * 2009-10-08 2012-08-09 Lg Innotek Co., Ltd. Plate Member For Touch Panel and Method of Manufacturing the Same
CN114300562A (zh) * 2021-12-30 2022-04-08 天合光能股份有限公司 一种大尺寸双玻组件封边方法
WO2025182796A1 (ja) * 2024-02-28 2025-09-04 東京エレクトロン株式会社 炭素系膜の成膜方法及び成膜装置
WO2025182795A1 (ja) * 2024-02-28 2025-09-04 東京エレクトロン株式会社 炭素系膜の成膜方法及び成膜装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101381817B1 (ko) * 2011-06-30 2014-04-07 삼성디스플레이 주식회사 터치 스크린 패널
CN102810347A (zh) * 2012-03-30 2012-12-05 梧州三和新材料科技有限公司 一种应用于非金属材料的碳—金属嵌渗式导电膜制备方法
US8679987B2 (en) * 2012-05-10 2014-03-25 Applied Materials, Inc. Deposition of an amorphous carbon layer with high film density and high etch selectivity
FR2993395A1 (fr) * 2012-07-12 2014-01-17 St Microelectronics Crolles 2 Procede de traitement d'un substrat, en particulier pour la protection de couches antireflets
US10435567B2 (en) * 2014-02-11 2019-10-08 The Mackinac Technology Company Fluorinated and hydrogenated diamond-like carbon materials for anti-reflective coatings
US10650935B2 (en) 2017-08-04 2020-05-12 Vitro Flat Glass Llc Transparent conductive oxide having an embedded film
CN108598198A (zh) * 2018-04-26 2018-09-28 上海空间电源研究所 一种耐原子氧柔性高透明导电封装材料
CN110938804B (zh) * 2019-12-03 2022-06-03 中国建筑材料科学研究总院有限公司 宽光谱无定形碳膜、光学薄膜及其制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102109A (ja) * 1986-10-17 1988-05-07 旭硝子株式会社 透明電導膜
JPH06278244A (ja) * 1993-01-29 1994-10-04 Mitsui Toatsu Chem Inc 積層体
JPH09156023A (ja) * 1995-12-05 1997-06-17 Mitsui Toatsu Chem Inc 透明導電性積層体
JP2001283643A (ja) 2000-03-31 2001-10-12 Toyobo Co Ltd 透明導電性フィルム、透明導電性シートおよびタッチパネル
JP2003034860A (ja) 2001-07-24 2003-02-07 Bridgestone Corp 透明導電フィルム及びタッチパネル
JP2003109434A (ja) 2001-06-27 2003-04-11 Bridgestone Corp 透明導電フィルム及びタッチパネル
JP2003113471A (ja) * 2001-10-03 2003-04-18 Japan Science & Technology Corp ダイヤモンド様炭素膜透明導電積層体及びその製造方法
JP2007122568A (ja) * 2005-10-31 2007-05-17 Matsushita Electric Ind Co Ltd 抵抗膜式タッチパネルおよびその製造方法
JP2009016179A (ja) * 2007-07-04 2009-01-22 Kaneka Corp 透明導電膜とその製造方法

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US5266409A (en) * 1989-04-28 1993-11-30 Digital Equipment Corporation Hydrogenated carbon compositions
TW250618B (ja) * 1993-01-27 1995-07-01 Mitsui Toatsu Chemicals

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JPS63102109A (ja) * 1986-10-17 1988-05-07 旭硝子株式会社 透明電導膜
JPH06278244A (ja) * 1993-01-29 1994-10-04 Mitsui Toatsu Chem Inc 積層体
JPH09156023A (ja) * 1995-12-05 1997-06-17 Mitsui Toatsu Chem Inc 透明導電性積層体
JP2001283643A (ja) 2000-03-31 2001-10-12 Toyobo Co Ltd 透明導電性フィルム、透明導電性シートおよびタッチパネル
JP2003109434A (ja) 2001-06-27 2003-04-11 Bridgestone Corp 透明導電フィルム及びタッチパネル
JP2003034860A (ja) 2001-07-24 2003-02-07 Bridgestone Corp 透明導電フィルム及びタッチパネル
JP2003113471A (ja) * 2001-10-03 2003-04-18 Japan Science & Technology Corp ダイヤモンド様炭素膜透明導電積層体及びその製造方法
JP2007122568A (ja) * 2005-10-31 2007-05-17 Matsushita Electric Ind Co Ltd 抵抗膜式タッチパネルおよびその製造方法
JP2009016179A (ja) * 2007-07-04 2009-01-22 Kaneka Corp 透明導電膜とその製造方法

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J. KRC ET AL., PROGRESS IN PHOTOVOLTAICS, vol. 11, 2003, pages 15
See also references of EP2216791A4

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193675A (ja) * 2008-02-12 2009-08-27 Kaneka Corp 透明導電膜
JP2009193673A (ja) * 2008-02-12 2009-08-27 Kaneka Corp 透明導電膜の製造方法
JP2011003848A (ja) * 2009-06-22 2011-01-06 Kaneka Corp 結晶シリコン系太陽電池
US20120200928A1 (en) * 2009-10-08 2012-08-09 Lg Innotek Co., Ltd. Plate Member For Touch Panel and Method of Manufacturing the Same
CN114300562A (zh) * 2021-12-30 2022-04-08 天合光能股份有限公司 一种大尺寸双玻组件封边方法
CN114300562B (zh) * 2021-12-30 2023-06-23 天合光能股份有限公司 一种大尺寸双玻组件封边方法
WO2025182796A1 (ja) * 2024-02-28 2025-09-04 東京エレクトロン株式会社 炭素系膜の成膜方法及び成膜装置
WO2025182795A1 (ja) * 2024-02-28 2025-09-04 東京エレクトロン株式会社 炭素系膜の成膜方法及び成膜装置

Also Published As

Publication number Publication date
EP2216791A1 (en) 2010-08-11
EP2216791A4 (en) 2011-07-13
US20100310863A1 (en) 2010-12-09

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