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WO2009069658A1 - Matériau pour cible de pulvérisation et cible de pulvérisation obtenue au moyen du matériau pour cible de pulvérisation - Google Patents

Matériau pour cible de pulvérisation et cible de pulvérisation obtenue au moyen du matériau pour cible de pulvérisation Download PDF

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Publication number
WO2009069658A1
WO2009069658A1 PCT/JP2008/071448 JP2008071448W WO2009069658A1 WO 2009069658 A1 WO2009069658 A1 WO 2009069658A1 JP 2008071448 W JP2008071448 W JP 2008071448W WO 2009069658 A1 WO2009069658 A1 WO 2009069658A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
target material
rectangular
sputtering
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071448
Other languages
English (en)
Japanese (ja)
Inventor
Kazuo Matsumae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to KR1020097017874A priority Critical patent/KR20090110922A/ko
Priority to CN2008800082396A priority patent/CN101631893B/zh
Publication of WO2009069658A1 publication Critical patent/WO2009069658A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention a pour objet un matériau pour cible de pulvérisation qui permet une réduction importante de la formation d'un arc électrique et la suppression de la formation de cassures et de fissures, ainsi qu'une cible de pulvérisation obtenue au moyen du matériau pour cible de pulvérisation. Le matériau pour cible de pulvérisation, sensiblement du type panneau, possède une surface de pulvérisation rectangulaire, des surfaces latérales rectangulaires et une surface de liaison rectangulaire. Une section d'angle, qui est formée par au moins trois surfaces contiguës les unes aux autres parmi une pluralité de surfaces constituant le matériau pour cible de pulvérisation, est chanfreinée.
PCT/JP2008/071448 2007-11-28 2008-11-26 Matériau pour cible de pulvérisation et cible de pulvérisation obtenue au moyen du matériau pour cible de pulvérisation Ceased WO2009069658A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097017874A KR20090110922A (ko) 2007-11-28 2008-11-26 스퍼터링 타겟재 및 이것으로부터 얻어지는 스퍼터링 타겟
CN2008800082396A CN101631893B (zh) 2007-11-28 2008-11-26 溅射靶材以及由该溅射靶材所得的溅射靶

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-307400 2007-11-28
JP2007307400A JP2009127125A (ja) 2007-11-28 2007-11-28 スパッタリングターゲット材およびこれから得られるスパッタリングターゲット

Publications (1)

Publication Number Publication Date
WO2009069658A1 true WO2009069658A1 (fr) 2009-06-04

Family

ID=40678552

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071448 Ceased WO2009069658A1 (fr) 2007-11-28 2008-11-26 Matériau pour cible de pulvérisation et cible de pulvérisation obtenue au moyen du matériau pour cible de pulvérisation

Country Status (5)

Country Link
JP (1) JP2009127125A (fr)
KR (1) KR20090110922A (fr)
CN (1) CN101631893B (fr)
TW (1) TWI411698B (fr)
WO (1) WO2009069658A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018131686A (ja) * 2018-01-10 2018-08-23 住友化学株式会社 スパッタリングターゲットの加工方法およびスパッタリングターゲット製品の製造方法
WO2019026955A1 (fr) * 2017-08-01 2019-02-07 出光興産株式会社 Cible de pulvérisation, procédé de formation de film d'oxyde semi-conducteur, et plaque de support
US10562112B2 (en) 2017-02-16 2020-02-18 Sumitomo Chemical Company, Limited Method for processing sputtering target and method for manufacturing sputtering target product
US20200338650A1 (en) * 2017-02-16 2020-10-29 Sumitomo Chemical Company, Limited Cutting tool for sputtering target, processing method of sputtering target, and manufacturing method of sputtering target product

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011058882A1 (fr) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Cible de pulvérisation cathodique et procédé pour fabriquer celle-ci, et transistor
WO2011062003A1 (fr) * 2009-11-17 2011-05-26 Jx日鉱日石金属株式会社 Procédé de stockage d'une cible à base d'oxyde de lanthane, et cible à base d'oxyde de lanthane conditionnée sous vide
JP5580235B2 (ja) * 2010-03-31 2014-08-27 太平洋セメント株式会社 スパッタリングターゲット
WO2012117926A1 (fr) * 2011-03-01 2012-09-07 シャープ株式会社 Cible de pulvérisation cathodique et son procédé de fabrication, et procédé de fabrication d'un transistor en couches minces
JP6359901B2 (ja) * 2014-07-16 2018-07-18 三菱マテリアル株式会社 スパッタリングターゲット
JP6514664B2 (ja) * 2016-05-25 2019-05-15 山陽特殊製鋼株式会社 スパッタリングターゲット材
JP6527609B2 (ja) * 2017-02-16 2019-06-05 住友化学株式会社 スパッタリングターゲットの加工方法、スパッタリングターゲットの加工装置、およびスパッタリングターゲット製品の製造方法
JP6960989B2 (ja) * 2017-03-31 2021-11-05 三井金属鉱業株式会社 分割スパッタリングターゲット
JP7258714B2 (ja) * 2019-10-09 2023-04-17 日本電波工業株式会社 光学ブランク部材
CN111455328A (zh) * 2020-05-07 2020-07-28 宁波江丰电子材料股份有限公司 一种避免反溅射层剥离的sip系列靶材及其用途

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1161395A (ja) * 1997-08-08 1999-03-05 Tosoh Corp Ｉｔｏスパッタリングターゲット
JP2000119847A (ja) * 1998-10-06 2000-04-25 Nikko Gould Foil Kk 酸化物焼結体スパッタリングターゲット組立体
JP2003051449A (ja) * 2001-05-21 2003-02-21 Sharp Corp シリコンターゲットを製造するシステムとその方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59211575A (ja) * 1983-05-17 1984-11-30 Toshiba Corp スパツタリング用タ−ゲツト
TW562870B (en) * 2001-10-12 2003-11-21 Tosoh Corp Sputtering target
JP2007070715A (ja) * 2005-09-09 2007-03-22 Idemitsu Kosan Co Ltd スパッタリングターゲット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1161395A (ja) * 1997-08-08 1999-03-05 Tosoh Corp Ｉｔｏスパッタリングターゲット
JP2000119847A (ja) * 1998-10-06 2000-04-25 Nikko Gould Foil Kk 酸化物焼結体スパッタリングターゲット組立体
JP2003051449A (ja) * 2001-05-21 2003-02-21 Sharp Corp シリコンターゲットを製造するシステムとその方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562112B2 (en) 2017-02-16 2020-02-18 Sumitomo Chemical Company, Limited Method for processing sputtering target and method for manufacturing sputtering target product
US20200338650A1 (en) * 2017-02-16 2020-10-29 Sumitomo Chemical Company, Limited Cutting tool for sputtering target, processing method of sputtering target, and manufacturing method of sputtering target product
WO2019026955A1 (fr) * 2017-08-01 2019-02-07 出光興産株式会社 Cible de pulvérisation, procédé de formation de film d'oxyde semi-conducteur, et plaque de support
CN110892089A (zh) * 2017-08-01 2020-03-17 出光兴产株式会社 溅射靶、氧化物半导体膜的成膜方法以及背板
KR20200037209A (ko) * 2017-08-01 2020-04-08 이데미쓰 고산 가부시키가이샤 스퍼터링 타깃, 산화물 반도체막의 성막 방법 및 배킹 플레이트
JPWO2019026955A1 (ja) * 2017-08-01 2020-09-10 出光興産株式会社 スパッタリングターゲット、酸化物半導体膜の成膜方法、およびバッキングプレート
CN110892089B (zh) * 2017-08-01 2022-05-24 出光兴产株式会社 溅射靶、氧化物半导体膜的成膜方法以及背板
JP7201595B2 (ja) 2017-08-01 2023-01-10 出光興産株式会社 スパッタリングターゲット、酸化物半導体膜の成膜方法、およびバッキングプレート
KR102535445B1 (ko) 2017-08-01 2023-05-22 이데미쓰 고산 가부시키가이샤 스퍼터링 타깃, 산화물 반도체막의 성막 방법 및 배킹 플레이트
JP2018131686A (ja) * 2018-01-10 2018-08-23 住友化学株式会社 スパッタリングターゲットの加工方法およびスパッタリングターゲット製品の製造方法

Also Published As

Publication number Publication date
TWI411698B (zh) 2013-10-11
JP2009127125A (ja) 2009-06-11
TW200936791A (en) 2009-09-01
CN101631893B (zh) 2012-03-21
CN101631893A (zh) 2010-01-20
KR20090110922A (ko) 2009-10-23

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