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WO2009069658A1 - Sputtering target material and sputtering target obtained by using the sputtering target material - Google Patents

Sputtering target material and sputtering target obtained by using the sputtering target material Download PDF

Info

Publication number
WO2009069658A1
WO2009069658A1 PCT/JP2008/071448 JP2008071448W WO2009069658A1 WO 2009069658 A1 WO2009069658 A1 WO 2009069658A1 JP 2008071448 W JP2008071448 W JP 2008071448W WO 2009069658 A1 WO2009069658 A1 WO 2009069658A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
target material
rectangular
sputtering
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071448
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuo Matsumae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to KR1020097017874A priority Critical patent/KR20090110922A/en
Priority to CN2008800082396A priority patent/CN101631893B/en
Publication of WO2009069658A1 publication Critical patent/WO2009069658A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Provided are a sputtering target material by which generation of arcing can be surely reduced and generation of breakage and cracks is suppressed, and a sputtering target obtained by using the sputtering target material. The substantially board-like sputtering target material has a rectangular sputtering surface, rectangular side surfaces and a rectangular bonding surface. A corner section, which is formed by having at least three surfaces abut to each other among a plurality of surfaces constituting the sputtering target material, is chamfered.
PCT/JP2008/071448 2007-11-28 2008-11-26 Sputtering target material and sputtering target obtained by using the sputtering target material Ceased WO2009069658A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097017874A KR20090110922A (en) 2007-11-28 2008-11-26 Sputtering target material and sputtering target obtained from this
CN2008800082396A CN101631893B (en) 2007-11-28 2008-11-26 Sputtering target material and sputtering target obtained by using the sputtering target material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-307400 2007-11-28
JP2007307400A JP2009127125A (en) 2007-11-28 2007-11-28 Sputtering target material and sputtering target obtained therefrom

Publications (1)

Publication Number Publication Date
WO2009069658A1 true WO2009069658A1 (en) 2009-06-04

Family

ID=40678552

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071448 Ceased WO2009069658A1 (en) 2007-11-28 2008-11-26 Sputtering target material and sputtering target obtained by using the sputtering target material

Country Status (5)

Country Link
JP (1) JP2009127125A (en)
KR (1) KR20090110922A (en)
CN (1) CN101631893B (en)
TW (1) TWI411698B (en)
WO (1) WO2009069658A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018131686A (en) * 2018-01-10 2018-08-23 住友化学株式会社 Sputtering target processing method and sputtering target product manufacturing method
WO2019026955A1 (en) * 2017-08-01 2019-02-07 出光興産株式会社 Sputtering target, method for forming oxide semiconductor film, and backing plate
US10562112B2 (en) 2017-02-16 2020-02-18 Sumitomo Chemical Company, Limited Method for processing sputtering target and method for manufacturing sputtering target product
US20200338650A1 (en) * 2017-02-16 2020-10-29 Sumitomo Chemical Company, Limited Cutting tool for sputtering target, processing method of sputtering target, and manufacturing method of sputtering target product

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011058882A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
WO2011062003A1 (en) * 2009-11-17 2011-05-26 Jx日鉱日石金属株式会社 Method for storing lanthanum oxide target, and vacuum-packed lanthanum oxide target
JP5580235B2 (en) * 2010-03-31 2014-08-27 太平洋セメント株式会社 Sputtering target
WO2012117926A1 (en) * 2011-03-01 2012-09-07 シャープ株式会社 Sputtering target and method for producing same, and method for producing thin film transistor
JP6359901B2 (en) * 2014-07-16 2018-07-18 三菱マテリアル株式会社 Sputtering target
JP6514664B2 (en) * 2016-05-25 2019-05-15 山陽特殊製鋼株式会社 Sputtering target material
JP6527609B2 (en) * 2017-02-16 2019-06-05 住友化学株式会社 Sputtering target processing method, sputtering target processing apparatus, and sputtering target product manufacturing method
JP6960989B2 (en) * 2017-03-31 2021-11-05 三井金属鉱業株式会社 Split sputtering target
JP7258714B2 (en) * 2019-10-09 2023-04-17 日本電波工業株式会社 Optical blank member
CN111455328A (en) * 2020-05-07 2020-07-28 宁波江丰电子材料股份有限公司 SIP (Session initiation protocol) series target material capable of avoiding stripping of reverse sputtering layer and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1161395A (en) * 1997-08-08 1999-03-05 Tosoh Corp ITO sputtering target
JP2000119847A (en) * 1998-10-06 2000-04-25 Nikko Gould Foil Kk Oxide sintered compact sputtering target assembly
JP2003051449A (en) * 2001-05-21 2003-02-21 Sharp Corp System and method for manufacturing silicon target

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59211575A (en) * 1983-05-17 1984-11-30 Toshiba Corp Target for sputtering
TW562870B (en) * 2001-10-12 2003-11-21 Tosoh Corp Sputtering target
JP2007070715A (en) * 2005-09-09 2007-03-22 Idemitsu Kosan Co Ltd Sputtering target

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1161395A (en) * 1997-08-08 1999-03-05 Tosoh Corp ITO sputtering target
JP2000119847A (en) * 1998-10-06 2000-04-25 Nikko Gould Foil Kk Oxide sintered compact sputtering target assembly
JP2003051449A (en) * 2001-05-21 2003-02-21 Sharp Corp System and method for manufacturing silicon target

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562112B2 (en) 2017-02-16 2020-02-18 Sumitomo Chemical Company, Limited Method for processing sputtering target and method for manufacturing sputtering target product
US20200338650A1 (en) * 2017-02-16 2020-10-29 Sumitomo Chemical Company, Limited Cutting tool for sputtering target, processing method of sputtering target, and manufacturing method of sputtering target product
WO2019026955A1 (en) * 2017-08-01 2019-02-07 出光興産株式会社 Sputtering target, method for forming oxide semiconductor film, and backing plate
CN110892089A (en) * 2017-08-01 2020-03-17 出光兴产株式会社 Sputtering target, method for forming oxide semiconductor film, and backplane
KR20200037209A (en) * 2017-08-01 2020-04-08 이데미쓰 고산 가부시키가이샤 Sputtering target, deposition method of oxide semiconductor film and backing plate
JPWO2019026955A1 (en) * 2017-08-01 2020-09-10 出光興産株式会社 Sputtering target, oxide semiconductor film deposition method, and backing plate
CN110892089B (en) * 2017-08-01 2022-05-24 出光兴产株式会社 Sputtering target, method for forming oxide semiconductor film, and backing plate
JP7201595B2 (en) 2017-08-01 2023-01-10 出光興産株式会社 Sputtering target, method for forming oxide semiconductor film, and backing plate
KR102535445B1 (en) 2017-08-01 2023-05-22 이데미쓰 고산 가부시키가이샤 Sputtering target, oxide semiconductor film formation method and backing plate
JP2018131686A (en) * 2018-01-10 2018-08-23 住友化学株式会社 Sputtering target processing method and sputtering target product manufacturing method

Also Published As

Publication number Publication date
TWI411698B (en) 2013-10-11
JP2009127125A (en) 2009-06-11
TW200936791A (en) 2009-09-01
CN101631893B (en) 2012-03-21
CN101631893A (en) 2010-01-20
KR20090110922A (en) 2009-10-23

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